阅读说明：本技术 低温漂基准源的实现装置 (The realization device of Low Drift Temperature a reference source ) 是由 何洋 胡毅 李振国 冯曦 唐晓柯 冯文楠 邵炜平 于 2019-09-18 设计创作，主要内容包括：本发明公开了一种低温漂基准源的实现装置,包括：自加热模块,用于在温度控制信号的控制下对局部电路进行加热；低温漂基准电路,与所述自加热模块相连接,用于输出供外部模块使用的极低温漂参考电压VREF以及极低温漂参考电流IREF；以及温度检测模块,与所述低温漂基准电路相连接,用于检测所述低温漂基准电路的温度,并根据检测的温度发出温度控制信号,使所述低温漂基准电路的环境温度在所述预设区间的范围内。本发明提供的低温漂基准源的实现装置,使低温漂基准电路基本不受外界温度影响,降低了温度系数对电路的影响,且不提高电路的复杂度。(The invention discloses a kind of realization devices of Low Drift Temperature a reference source, comprising: self-heating module, for being heated under the control of temperature control signals to local circuit；Low Drift Temperature reference circuit is connected with the self-heating module, for exporting the extremely low temperature drift reference voltage VREF and extremely low temperature drift reference current IREF that use for external module；And temperature detecting module, it is connected with the Low Drift Temperature reference circuit, temperature control signals are issued for detecting the temperature of the Low Drift Temperature reference circuit, and according to the temperature of detection, make the environment temperature of the Low Drift Temperature reference circuit in the range of pre-set interval.The realization device of Low Drift Temperature a reference source provided by the invention, keeps Low Drift Temperature reference circuit substantially free of extraneous thermal effects, reduces influence of the temperature coefficient to circuit, and do not improve the complexity of circuit.)

1. a kind of realization device of Low Drift Temperature a reference source characterized by comprising

Self-heating module, for being heated under the control of temperature control signals to local circuit；

Low Drift Temperature reference circuit is connected with the self-heating module, for exporting the extremely low temperature drift ginseng used for external module Examine voltage VREF and extremely low temperature drift reference current IREF；And

Temperature detecting module is connected with the Low Drift Temperature reference circuit, for detecting the temperature of the Low Drift Temperature reference circuit, And temperature control signals are issued according to the temperature of detection, make the environment temperature of the Low Drift Temperature reference circuit in the pre-set interval In the range of.

2. realization device as described in claim 1, which is characterized in that the self-heating module includes heat generating transistor and electricity Resistance.

3. realization device as described in claim 1, which is characterized in that the temperature detecting module includes:

Temperature sensor, for detecting the temperature of the Low Drift Temperature reference circuit；

Control module is connected with the temperature sensor, is greater than preset areas for the temperature in the Low Drift Temperature reference circuit Between when send reduce size of current temperature control signals, and the Low Drift Temperature reference circuit temperature be less than pre-set interval When send increase size of current temperature control signals.

4. realization device as described in claim 1, which is characterized in that the Low Drift Temperature a reference source realization device further includes electricity Source, the power supply are connected with the temperature detecting module, the Low Drift Temperature reference circuit and the self-heating module respectively.

5. realization device as described in claim 1, which is characterized in that Low Drift Temperature reference circuit is band-gap reference source circuit.

6. realization device as claimed in claim 3, which is characterized in that the Low Drift Temperature reference circuit also exports and temperature is at just The electric current of ratio；

The temperature sensor includes: positive temperature coefficient voltage signal generation module, and the control module includes that the first operation is put Big device；

The positive temperature coefficient voltage signal generation module is for receiving pole Low Drift Temperature reference voltage VREF, extremely low temperature drift with reference to electricity Flow IREF and the electric current directly proportional to temperature, according to extremely low temperature drift reference voltage VREF, extremely low temperature drift reference current IREF with And the electric current directly proportional to temperature generates VPTAT signal, the VPTAT is the voltage signal directly proportional to temperature；

The VPTAT signal of the positive temperature coefficient voltage signal generation module output and the positive input terminal phase of the first operational amplifier Even, the negative input end of first operational amplifier is connected with its output end, and the output end of first operational amplifier and The self-heating module is connected.

7. realization device as claimed in claim 6, which is characterized in that the self-heating module includes: the first heating transistor And first resistor；

Wherein, the grid of the output end of first operational amplifier and the first heating transistor is connected；

The source level of the first heating transistor is connected with power supply, the drain and the first resistor of the first heating transistor One end be connected, the other end of the first resistor and be connected.

8. realization device as claimed in claim 3, which is characterized in that the temperature sensor includes triode, the control Module includes second operational amplifier；

The emitter of the triode is connected with the output electric current of the Low Drift Temperature reference circuit, the ground level of the triode and Grounded collector, the emitter of the triode with emitter be connected with the negative input end of the operational amplifier；

The output end and positive input terminal of the second operational amplifier are connected with the self-heating module respectively.

9. realization device as claimed in claim 8, which is characterized in that the self-heating module include: the second heating transistor, Second resistance, 3rd resistor；

Wherein, the output end of the second operational amplifier is connected with the grid of the second heating transistor；Described second The source level of heating transistor is controlled to a power supply；The drain electrode of the second heating transistor and one end phase of the second resistance Even, the other end of the second resistance is connected with the positive input terminal of the second operational amplifier；One end of the 3rd resistor The positive input terminal of operational amplifier is connected, the other end ground connection of the 3rd resistor.

The present invention relates to Low Drift Temperature a reference sources, especially with regard to a kind of realization device of Low Drift Temperature a reference source.

Currently, Low Drift Temperature reference source circuit is widely used in IC chip, for providing stable reference level Signal, reference current signal are completed level for modules other in IC chip and are compared, and bias current, biasing circuit produce The functions such as raw, are essential functional modules in IC chip.With the development of integrated circuit technology, high precision reference Source determines the resolving accuracy of ADC, DAC module, therefore the design and implementation in high precision reference source becomes design key.It is high-precision Degree reference source circuit is made of Low Drift Temperature reference source circuit, it is desirable that the reference voltage or reference current of generation are by extraneous temperature Degree, voltage, chip production manufacturing process deviation effects under, change it is the smaller the better, voltage, process deviation can pass through calibration The methods of keep its influence minimum, but due to the physical characteristic of semiconductor devices, the variation influence of temperature is difficult to eliminate, therefore drops Low reference voltage, which is influenced by temperature, becomes design difficulty.

Usually in the reference source circuit of Low Drift Temperature, weighted using the voltage that the directly proportional voltage of temperature and temperature are inversely proportional The mode of addition realizes that the voltage that wherein temperature is inversely proportional has the temperature coefficient of second order or more, wide warm more than 100 DEG C When changing within the scope of area, the temperature coefficient that high-order temperature coefficient will lead to high precision reference source circuit be cannot be completely eliminated.It is existing In technology, for correcting temperature coefficient, need through complicated curvature correction technology, for example, be added in electric current fine-adjusting current/ Voltage branch is finely adjusted positive voltage coefficient and negative voltage coefficient, carries out high-order curvature and trims, to reduce temperature coefficient.

Based on this, the inventors of the present application found that the complexity that existing solution increases circuit also increases electricity The area on road cannot be completely eliminated the influence of high-order temperature coefficient, and high precision reference source circuit is influenced by ambient temperature.

The information disclosed in the background technology section is intended only to increase the understanding to general background of the invention, without answering When being considered as recognizing or imply that the information constitutes the prior art already known to those of ordinary skill in the art in any form.

The purpose of the present invention is to provide a kind of realization devices of Low Drift Temperature a reference source, and high precision reference source can be made electric Roadbed sheet is free of extraneous thermal effects, and does not improve the complexity of circuit.

To achieve the above object, the present invention provides a kind of realization devices of Low Drift Temperature a reference source, comprising: self-heating mould Block, for being heated under the control of temperature control signals to local circuit；Low Drift Temperature reference circuit, with the self-heating mould Block is connected, for exporting the extremely low temperature drift reference voltage VREF and extremely low temperature drift reference current that use for external module IREF；And temperature detecting module, it is connected with the Low Drift Temperature reference circuit, for detecting the Low Drift Temperature reference circuit Temperature, and temperature control signals are issued according to the temperature of detection, make the environment temperature of the Low Drift Temperature reference circuit described pre- If in the range of section.

In a preferred embodiment, the self-heating module includes heat generating transistor and resistance.

In a preferred embodiment, the temperature detecting module includes: temperature sensor, for detecting the low temperature Float the temperature of reference circuit；Control module is connected with the temperature sensor, for the temperature in the Low Drift Temperature reference circuit Degree sends the temperature control signals for reducing size of current, and the temperature in the Low Drift Temperature reference circuit when being greater than pre-set interval The temperature control signals for increasing size of current are sent when less than pre-set interval.

In a preferred embodiment, the Low Drift Temperature a reference source realization device further includes power supply, the power supply difference It is connected with the temperature detecting module, the Low Drift Temperature reference circuit and the self-heating module.

In a preferred embodiment, Low Drift Temperature reference circuit is band-gap reference source circuit.

In a preferred embodiment, the Low Drift Temperature reference circuit also exports the electric current directly proportional to temperature；It is described Temperature sensor includes: positive temperature coefficient voltage signal generation module, and the control module includes the first operational amplifier；It is described Positive temperature coefficient voltage signal generation module for receiving pole Low Drift Temperature reference voltage VREF, extremely low temperature drift reference current IREF with And the electric current directly proportional to temperature, according to extremely low temperature drift reference voltage VREF, extremely low temperature drift reference current IREF and and temperature Directly proportional electric current generates VPTAT signal, and the VPTAT is the voltage signal directly proportional to temperature；The positive temperature coefficient electricity The positive input terminal of the VPTAT signal and the first operational amplifier of pressing signal generator module output is connected, first operation amplifier The negative input end of device is connected with its output end, and the output end of first operational amplifier is connected with the self-heating module It connects.

In a preferred embodiment, the self-heating module includes: the first heating transistor and first resistor；Its In, the grid of the output end of first operational amplifier and the first heating transistor is connected；The first heating transistor Source level is connected with power supply, and the drain of the first heating transistor is connected with one end of the first resistor, the first resistor The other end with ground be connected.

In a preferred embodiment, the temperature sensor includes triode, and the control module includes the second fortune Calculate amplifier；The emitter of the triode is connected with the output electric current of the Low Drift Temperature reference circuit, the triode Ground level and grounded collector, the emitter of the triode with emitter be connected with the negative input end of the operational amplifier It connects；The output end and positive input terminal of the second operational amplifier are connected with the self-heating module respectively.

In a preferred embodiment, the self-heating module includes: the second heating transistor, second resistance, third Resistance；Wherein, the output end of the second operational amplifier is connected with the grid of the second heating transistor；Described second The source level of heating transistor is controlled to a power supply；The drain electrode of the second heating transistor and one end phase of the second resistance Even, the other end of the second resistance is connected with the positive input terminal of the second operational amplifier；One end of the 3rd resistor The positive input terminal of operational amplifier is connected, the other end ground connection of the 3rd resistor.

Compared with prior art, the realization device of Low Drift Temperature a reference source according to the present invention, by self-heating module and Temperature detecting module keeps Low Drift Temperature reference circuit substantially free of extraneous thermal effects, reduces influence of the temperature coefficient to circuit, And do not improve the complexity of circuit.

Fig. 1 is the structural schematic diagram of band-gap reference source circuit according to an embodiment of the present invention.

Fig. 2 is the structural schematic diagram of the realization device of Low Drift Temperature a reference source according to an embodiment of the present invention.

Fig. 3 is the circuit diagram of the realization device of Low Drift Temperature a reference source according to an embodiment of the present invention.

Fig. 4 is the circuit diagram of the realization device of the Low Drift Temperature a reference source of another embodiment according to the present invention.

Fig. 5 is the signal that a kind of domain of the realization device of Low Drift Temperature a reference source according to an embodiment of the present invention is realized Figure.

Specific embodiment

With reference to the accompanying drawing, specific embodiments of the present invention will be described in detail, it is to be understood that guarantor of the invention Shield range is not limited by the specific implementation.

Unless otherwise explicitly stated, otherwise in entire disclosure and claims, term " includes " or its change Changing such as "comprising" or " including " etc. will be understood to comprise stated element or component, and not exclude other members Part or other component parts.

Currently, there is existing generate the benchmark ource electric current of low-temperature coefficient mainly to use band-gap reference source circuit real It is existing, by obtaining the voltage directly proportional with temperature and the voltage weighting summation being inversely proportional with temperature with zero-temperature coefficient Reference voltage and electric current.The voltage directly proportional with temperature uses the base of two parasitic-PNP transistors in CMOS integrated circuit Pole-emitter voltage V_BEDifference come realize and temperature at negative temperature coefficient voltage use parasitic-PNP transistor base stage- Emitter voltage V_BEIt realizes, the two voltages can be reached to the reference signal of Low Drift Temperature using the method for weighting summation Source.One of implementation method after circuit start, is flowed through as shown in FIG. 1, FIG. 1 is the structural schematic diagram of band-gap reference source circuit The electric current of transistor M1, M2 are equal, and operational amplifier OP1 makes the current potential of the upper end resistance R1 and the electricity of PNP triode Q1 source level There is following relationship in position:

V_EB1+V_os=V_R1+V_EB2

Wherein, V_EB1For the emitter base voltage of triode Q1, V_osFor the offset voltage of amplifier OP1, V_R1For resistance R1 On voltage drop, V_EB2For the emitter base voltage of triode Q2.

To Q1 and Q2, flowing through its electric current is I_C=I_S*exp(V_EB* q/kT), respectively equal to flow through the electric current of M1, M2, I_CFor The collector current of transistor Q is flowed through, its emitter current is equal to, Is is the saturation current of transistor Q and the size of transistor Correlation, V_EB1For the emitter base voltage of triode.V_R1=I_C2* R1, by these formula simultaneous, if design enables the ruler of M3 It is very little and M1, M2 equal sized, then it can derive formula one are as follows:

V_REF=V_EB3+R2/R1*(V_Tln(n)+V_OS) (1)

In formula one, V_EB3For source level-base voltage of triode Q3, R2, R1 are resistance, V_T=kT/q ∝ T, T For temperature；Ln (n) is the natural logrithm of the area ratio of transistor Q2 and Q1, can be determined by designing, V_osFor amplifier OP1's Offset voltage, q and k are constant.If the Section 2 in formula one ignores V_osIt is the voltage of the directly proportional relationship of a temperature, the One_VEB3There is negative temperature coefficient.

Therefore by rationally designing the coefficient of R2/R1 and ln (n), so that the negative temperature coefficient of first item and Section 2 are just Temperature coefficient offsets each other, then the temperature coefficient of available zero temp shift.But in practical applications, lower temperature in order to obtain Temperature coefficient, formula (1) can encounter some problems.

Firstly, according to formula two it is found that V_EB3Temperature coefficient be not linear.Formula two are as follows:

V_EB≈V_G0-V_Tln(KT^r-κ) (2)

Wherein V_G0It is constant, K is a constant related with technique, and r, κ are constant, therefore V_EBThere is height with the relationship of T Level number, so that formula one can only have zero-temperature coefficient under a temperature spot (such as room temperature), in the temperature of other temperature spots Degree coefficient is not zero, therefore brings temperature drift, and in particular with the increase of temperature inversion range, which is also gradually increased, Range of the representative value in tens ppm.In order to reduce the influence of higher order term, curvature compensation technology is generallyd use, is increased in Fig. 1 circuit The current injection circuit for adding auxiliary compensates the influence of higher order term to obtain lower temperature coefficient, but considerably increases figure one The complexity of circuit, while the precision of auxiliary circuit is also controlled, the complexity of production calibration is improved, to improve circuit Cost.

In addition, the item V that lacks of proper care in formula one_osAlso reference voltage is had an impact.V_osThe offset voltage of OP1, mainly by Process deviation in the production process of amplifier causes the mismatch of device to cause, offset voltage V_osAlso there is certain temperature system Number, is further degrading the temperature coefficient of reference source；On the other hand into V_osImbalance have randomness, may cause curvature school Positive circuit failure or even the temperature coefficient for deteriorating a reference source, reduce performance and increase adjustment cost.Electricity is eliminated by imbalance Road can reduce the random imbalance of amplifier, but also considerably increase the complexity of circuit design, additionally, due to V_BEIt is non-linear Relationship is difficult for the temperature drift of benchmark to be designed into very low level.

The present embodiment does not need curvature correction and offset canceling by proposing a kind of Low Drift Temperature a reference source realization device The implementation method of lower temperature coefficient a reference source, and then the coefficient by rationally designing R2/R1 and ln (n) can be obtained, is made The positive temperature coefficient of the negative temperature coefficient and Section 2 that obtain first item offsets each other, then the temperature coefficient of available zero temp shift. The complexity that may be implemented to effectively reduce circuit simplifies circuit design and production calibration process, and can be applied to each Circuit implementing method in kind integrated circuit technology.

As shown in Fig. 2, it is to be shown according to the structure of the realization device of the Low Drift Temperature a reference source of the preferred embodiment for the present invention It is intended to, comprising: self-heating module 1, Low Drift Temperature reference circuit 2, temperature detecting module 3.

Self-heating module 1 is for heating local circuit under the control of temperature control signals.

Wherein, self-heating module 1 includes including heat generating transistor and one or more resistance.

Low Drift Temperature reference circuit 2 is connected with the self-heating module 1, for exporting the extremely low temperature used for external module Float reference voltage VREF and extremely low temperature drift reference current IREF.Low Drift Temperature reference circuit can be band-gap reference source circuit.

Temperature detecting module 3 is connected with the Low Drift Temperature reference circuit 2, for detecting the Low Drift Temperature reference circuit Temperature, and temperature control signals are issued according to the temperature of detection, make the environment temperature of the Low Drift Temperature reference circuit described pre- If in the range of section.

Specifically, temperature detecting module 3 includes: temperature sensor 31 and control module 32.Temperature sensor 31 is used for Detect the temperature of the Low Drift Temperature reference circuit；

Control module 32 is connected with the temperature sensor 31, for being greater than in the temperature of the Low Drift Temperature reference circuit The temperature control signals for reducing size of current are sent when pre-set interval, are less than preset areas in the temperature of the Low Drift Temperature reference circuit Between when send increase size of current temperature control signals.

The Low Drift Temperature a reference source realization device further includes power supply 4, the power supply 4 respectively with the temperature detecting module 3, The Low Drift Temperature reference circuit 2 and the self-heating module 1 are connected.Wherein, power supply 4 can be an independent power supply, It is also possible to multiple power supplies to power to self-heating module 1, Low Drift Temperature reference circuit 2, temperature detecting module 3 respectively.

It should be noted that the temperature detecting module 3 in the present embodiment can be independent module, it can also be by Low Drift Temperature The partial circuit of reference circuit 2 provides.

In the present embodiment, basic principle flows through heat generating transistor and/or resistance using high current for self-heating module 1 to produce Heat amount heats local circuit；Temperature detecting module 3 detects the real time temperature of circuit part being heated, and controls certainly The size of current flowed through in heating module 1, the system for forming negative-feedback, so that the constant current hold in self-heating module 1, from And local temperature is kept constant.Low Drift Temperature reference circuit 2 is placed on self-heating module 1 and temperature detecting module 3 Around, so that the self-heating system that the environment temperature of Low Drift Temperature reference circuit 2 is collectively formed by self-heating module 1, temperature detecting module 3 The temperature of system is unrelated with the environment temperature in the chip external world to determine.Due to the temperature of Low Drift Temperature reference circuit 2 be it is constant and It is not related with ambient temperature, therefore Low Drift Temperature reference circuit 2 has fixed environment temperature, so that the circuit is with extremely low Temperature coefficient.According to formula one, due to the variation of ambient temperature very little of Low Drift Temperature reference circuit 2, V_EB3, V_T, V_OSTemperature Coefficient will not all generate effect, these are approximately constant term, therefore do not need complicated curvature regulation technology and imbalance and eliminate Technology can obtain extremely low temperature coefficient.

In actual circuit realization, when the electric current that self-heating module 1 flows through is larger, heating power will all be converted to heat Amount, heating power are as follows:

P=I*VDD

, and self-heating module 1, Low Drift Temperature reference circuit 2, the chip temperature T around temperature detecting module 3 are converted to, Middle I is the electric current for flowing through self-heating module 1, and VDD is supply voltage value.When local temperature T is less than the minimum value of pre-set interval, Temperature detecting module 3 can increase control electric current, and heating power increases, so that heat increases, local temperature T rises；When local temperature When spending T greater than pre-set interval maximum value, temperature detecting module will reduce the control electric current of self-heating module 1, reduce fever function Rate, so that heat reduces, control local temperature T decline, the system for forming negative-feedback is finally reached the temperature value of setting, sets Temperature value can determine by adjusting the electric current gear of heating module or the detection ratio of temperature detecting module.

When designing Low Drift Temperature reference source circuit 3, according to one, two and V of formula_T=kT/q, can approximation obtain formula Three:

R2/R1*ln (n)=(V_G0-V_EB3)/V_T, (3)

Wherein V_G0For constant, V_EB3For the emitter base voltage of the triode under specific temperature, R2/R1*ln (n) is to set Parameter is counted, can be controlled separately, so as to set the design parameter value under specific temperature, make V_REFUnder the specific temperature Temperature coefficient is 0, which is the temperature that self-heating module 1 and temperature detecting module 3 determine jointly.

The present embodiment is made by the way of self-heating negative-feedback by self-heating module and temperature detecting module as a result, Low Drift Temperature reference circuit is maintained within the scope of specific temperature, free of extraneous thermal effects, reduces temperature coefficient to circuit It influences, and does not improve the complexity of circuit.

And the environment temperature of reference source is stabilized significantly, is delayed so that the voltage of reference source changes with ambient temperature Slowly, to reduce the temperature coefficient of reference source；And it does not need to carry out complicated curvature adjustment circuit design and production adjustment Process simplifies circuit design, reduces production cost, simultaneously because a reference source work can obtain more under isoperibol The temperature coefficient of low reference voltage, electric current.

It is carried out below by way of realization device of two kinds of specific circuit structures to the Low Drift Temperature a reference source of the present embodiment detailed Description.

As shown in figure 3, it is the circuit according to the realization device of the Low Drift Temperature a reference source of a preferably embodiment of the invention Figure.The Low Drift Temperature reference circuit 2 also exports the electric current directly proportional to temperature.

In one implementation, temperature sensor 31 includes: positive temperature coefficient voltage signal generation module 311, described Control module 32 includes the first operational amplifier OP321.

The positive temperature coefficient PTAT voltage signal generator module 311 is used to receive the pole of the generation of band-gap reference source circuit 2 Low Drift Temperature reference voltage VREF, extremely low temperature drift reference current IREF and the electric current directly proportional to temperature are joined according to extremely low temperature drift It examines voltage VREF, extremely low temperature drift reference current IREF and the electric current directly proportional to temperature generates VPTAT signal, the VPTAT For the voltage signal directly proportional to temperature.

There are many ways of realization of the module, is such as but not limited to using PTAT current and Low Drift Temperature reference current while flowing The method for crossing the resistance of other end ground connection.

The VPTAT signal and the first operational amplifier OP321 that the positive temperature coefficient voltage signal generation module 311 exports Positive input terminal be connected, the negative input end of the first operational amplifier OP321 is connected with its output end, formation reversed feedback amplifier, And first the output end of operational amplifier OP321 be connected with the self-heating module.

The self-heating module 1 includes: the first heating transistor MP1 and first resistor RP1；Wherein, first fortune The grid of the output end and the first heating transistor MP1 of calculating amplifier OP321 is connected；The source of the first heating transistor MP1 Grade is connected with substrate with power supply, and the drain of the first heating transistor MP1 is connected with one end of the first resistor RP1, institute The other end for stating first resistor RP1 is connected with ground.

RP1 resistance value is small as far as possible flows through electric current big as far as possible for heating.It should be noted that the first operational amplifier OP321, just Temperaturecoefficient voltage signal generator module 311, Low Drift Temperature reference circuit 2, the power supply of MP1 and ground can be different power supply with Ground only gives the form for being all connected to a power supply and ground in figure, is not the restriction to the present embodiment.

In Fig. 3, MP1 and RP1 constitute self-heating system.The electric current Ip of the electric current and RP1 that flow through MP1 is controlled by VG voltage System, the thermal power P=VDD*I generated_p, wherein VDD is the substrate and source voltage of MP1.When VG voltage is lower, I_PBecome larger, Self-heating circuit is begun to warm up, and the temperature sensor that positive temperature coefficient voltage signal generation module 311 is constituted starts to detect temperature, VPTAT voltage is increased with the raising of temperature, and amplifier OP321 increases VG voltage, the electric current of MP1 is reduced, so that thermal power It reduces, forms degeneration factor.Reasonable setting VPTAT voltage coefficient and numerical value as a result, it is adjustable be finally reached it is heat-staple Temperature value.

As shown in figure 4, it is the electricity according to the preferably realization device of the Low Drift Temperature a reference source of another embodiment of the invention Lu Tu.

In one implementation, the temperature sensor 31 includes triode Q312, and control module 32 includes the second fortune Calculate amplifier OP322.

The emitter of the triode Q312 connects a current source, which is the current source directly proportional to temperature.It can also To be connected with the output electric current of the Low Drift Temperature reference circuit 2, the ground level and grounded collector of triode Q312, triode The emitter of Q312 is connected with the negative input end of second operational amplifier OP322；The second operational amplifier OP322's is defeated Outlet and positive input terminal are connected with the self-heating module 1 respectively.

Further, self-heating module 1 includes: the second heating transistor MP10, second resistance RP11,3rd resistor RP12。

Wherein, the grid of the output end of the second operational amplifier OP322 and the second heating transistor MP10 are connected in VG10；The source level and substrate of second heating transistor MP10 is controlled to a power supply；The drain electrode and the of second heating transistor MP10 One end of two resistance RP11 is connected, and the other end of second resistance RP11 is connected with the positive input terminal of second operational amplifier OP322 In FBB；The positive input terminal of one end operational amplifier OP322 of 3rd resistor RP12 is connected, another termination of 3rd resistor RP12 Ground.

In Fig. 4, OP322 and MP11, RP11, RP12 constitute feed circuit, and the electric current of MP11 is as shown in formula four, formula four Are as follows:

I_MP11=I_RP12=V_EB312/RP12 (4)

When the local temperature of detection is more than the maximum value of pre-set interval, emitter-ground level power supply V of Q10_EB312Decline, RP12 is constant, I_MP11Decline, thermal power decline, calorific value reduces, so that temperature reduces；If local temperature is lower than pre-set interval Minimum value when, V_EB312Rise, RP12 is constant, I_MP11Rise, thermal power rises, and calorific value increases, so that local temperature rises. The above process achieved the effect that one to temperature controlled negative-feedback, therefore can control temperature to setting temperature, control Parameter is RP11, the junction voltage etc. of RP12, Q312.Similarly the temperature coefficient of Low Drift Temperature reference circuit 2 may be set in setting Temperature coefficient under local temperature point is minimum, to obtain minimum temperature coefficient.

As shown in figure 5, it is a kind of version according to the realization device of the Low Drift Temperature a reference source of the preferred embodiment for the present invention Scheme the schematic diagram realized, PMOS and resistance R are self-heating module 1, carry out the circuit of heated center；A reference source REF is Low Drift Temperature base Quasi- circuit 2, self-heating module control its environment temperature；Temperature detecting module is used to control the size of temperature.Using the domain Layout, can make reference circuit obtain more balanced temperature, and reduce influence of the temperature gradient to it.

The present embodiment compared with prior art, has the advantage that as follows:

Prior art means use the base-emitter voltage of triode or work in the grid of subthreshold region metal-oxide-semiconductor Pole-source voltage negative temperature coefficient curve obtains Low Drift Temperature with the mode that is added is weighted with positive temperature coefficient curve A reference source, due to the gate-source voltage of triode ground level-transmitting step voltage or metal-oxide-semiconductor have temperature high order phase relation Number, in the wide temperature range more than 100 DEG C, high order related coefficient plays remarkable effect, and a reference source is difficult to reach corresponding low Temperature drift demand；The application motion uses self-heating negative-feedback constant temperature system, is integrated with heating system and Thermal feedback system on piece, The temperature of local heating reference source region is simultaneously maintained within the scope of specific temperature, stabilizes the environment temperature of reference source significantly Degree, so that the voltage of reference source changes with ambient temperature slowly, to reduce the temperature coefficient of reference source.

Prior art means can balance out base-emitter voltage or the Asia of triode by the method for curvature correction The gate-source voltage of threshold mos pipe, to obtain lower temperature coefficient.But curvature correction method can only balance out it is secondary Item, cubic term etc., base emitter voltage and temperature relation are logarithmic relationships, and therefore, it is difficult to correct completely；On the other hand, bent Rate bearing calibration needs accurate calibration quadratic term, cubic term, and high to the required precision of circuit, circuit complexity is high, and Need to carry out accurate adjustment when production, increase production cost, design difficulty, reduction yield, using the technology of this motion Means, a reference source use basic structure, do not need to carry out complicated curvature adjustment circuit design and production calibration procedures, Circuit design is simplified, production cost is reduced, simultaneously because a reference source work can obtain lower ginseng under isoperibol Examine the temperature coefficient of voltage, electric current.

The imbalance that amplifier, the mismatch of current mirror introduce will also result in the decline of temperature coefficient, because lacking of proper care itself just has Temperature coefficient, and it is random for lacking of proper care, therefore is difficult a reference source for obtaining having lower temperature coefficient by calibrating, it is necessary to The offset influence of amplifier, current mirror is eliminated using offset canceling.Offset canceling can make complex circuit designs, draw The problems such as entering High-frequency Interference, and imbalance is reduced using area big as far as possible.The technological means provided using this motion, is not required to Special design is carried out for the imbalance of amplifier current mirror, extremely low temperature system can be reached using basic reference source circuit Number, enormously simplifies design, improves the reliability of circuit work.

It should be understood by those skilled in the art that, embodiments herein can provide as method, system or computer program Product.Therefore, complete hardware embodiment, complete software embodiment or reality combining software and hardware aspects can be used in the application Apply the form of example.Moreover, it wherein includes the computer of computer usable program code that the application, which can be used in one or more, The computer program implemented in usable storage medium (including but not limited to magnetic disk storage, CD-ROM, optical memory etc.) produces The form of product.

The application is referring to method, the process of equipment (system) and computer program product according to the embodiment of the present application Figure and/or block diagram describe.It should be understood that every one stream in flowchart and/or the block diagram can be realized by computer program instructions The combination of process and/or box in journey and/or box and flowchart and/or the block diagram.It can provide these computer programs Instruct the processor of general purpose computer, special purpose computer, Embedded Processor or other programmable data processing devices to produce A raw machine, so that being generated by the instruction that computer or the processor of other programmable data processing devices execute for real The device for the function of being specified in present one or more flows of the flowchart and/or one or more blocks of the block diagram.

These computer program instructions, which may also be stored in, is able to guide computer or other programmable data processing devices with spy Determine in the computer-readable memory that mode works, so that it includes referring to that instruction stored in the computer readable memory, which generates, Enable the manufacture of device, the command device realize in one box of one or more flows of the flowchart and/or block diagram or The function of being specified in multiple boxes.

These computer program instructions also can be loaded onto a computer or other programmable data processing device, so that counting Series of operation steps are executed on calculation machine or other programmable devices to generate computer implemented processing, thus in computer or The instruction executed on other programmable devices is provided for realizing in one or more flows of the flowchart and/or block diagram one The step of function of being specified in a box or multiple boxes.

The aforementioned description to specific exemplary embodiment of the invention is in order to illustrate and illustration purpose.These descriptions It is not wishing to limit the invention to disclosed precise forms, and it will be apparent that according to the above instruction, can much be changed And variation.The purpose of selecting and describing the exemplary embodiment is that explaining specific principle of the invention and its actually answering With so that those skilled in the art can be realized and utilize a variety of different exemplary implementation schemes of the invention and Various chooses and changes.The scope of the present invention is intended to be limited by claims and its equivalents.