阅读说明：本技术 电力转换装置、其诊断系统、诊断方法和使用它的电动机控制系统 (Power inverter, its diagnostic system, diagnostic method and the motor control system using it ) 是由 木村嘉伸 坂野顺一 安井感 松岛宏行 古田太 于 2018-02-22 设计创作，主要内容包括：本发明的目的在于,在具有多个功率半导体器件的电力转换装置中,不设置温度传感器而廉价地在动作时检测开关元件的温度,诊断、控制电力转换装置的状态。为了达到上述目,本发明提供一种包括具有开关元件的功率半导体器件的电力转换装置,其包括：用于驱动开关元件的栅极驱动电路,其能够发送开关元件进行开关动作时的反馈信号；将用于进行开关的PWM指令信号输出至栅极驱动电路的控制部；基于PWM指令信号和反馈信号计算开关元件的结温度的温度检测部；和基于由温度检测部计算出的结温度和PWM指令信号来分析功率半导体器件的状态的运算处理部。(It is an object of the present invention in the power inverter with multiple power semiconductors, be not provided with temperature sensor and inexpensively in movement detection switch element temperature, diagnosis, control power inverter state.In order to reach above-mentioned mesh, it includes the power inverter with the power semiconductor of switch element that the present invention, which provides a kind of, comprising: for the gate driving circuit of driving switch element, feedback signal when switch element carries out switch motion can be sent；The PWM command signal for being used to switch is exported to the control unit of gate driving circuit；The temperature detecting part of the junction temperature of switch element is calculated based on PWM command signal and feedback signal；With based on the arithmetic processing section for analyzing the state of power semiconductor by the calculated junction temperature of temperature detecting part and PWM command signal.)

1. a kind of includes the power inverter with the power semiconductor of switch element characterized by comprising

For driving the gate driving circuit of the switch element, can send when the switch element carries out switch motion Feedback signal；

The PWM command signal for being used to switch is exported to the control unit of the gate driving circuit；

The temperature detecting part of the junction temperature of the switch element is calculated based on the PWM command signal and the feedback signal；With

Based on the shape for analyzing power semiconductor by the calculated junction temperature of the temperature detecting part and the PWM command signal The arithmetic processing section of state.

2. power inverter as described in claim 1, it is characterised in that:

The gate driving circuit, when the switch element carries out switch motion to the voltage and switch of grid and transmitting interpolar Cut-off reference voltage is compared, to generate the feedback signal.

3. power inverter as described in claim 1, it is characterised in that:

The temperature detecting part calculates the switch cut-off of the switch element based on the PWM command signal and the feedback signal Retardation, and calculate the junction temperature.

4. power inverter as described in claim 1, it is characterised in that:

With multiple power semiconductors,

And there is display unit, which is shown respectively by each of the multiple power semiconductor by the operation The state for the power semiconductor that processing unit analysis obtains.

5. a kind of motor controlled including power inverter described in claim 1 and by the power inverter is electronic Machine control system, it is characterised in that:

The power inverter has multiple power semiconductors,

And there is display unit, which is shown respectively by each of the multiple power semiconductor by the operation The state for the power semiconductor that processing unit analysis obtains.

6. a kind of motor control system including described in claim 5 and being connect via network with the motor control system The diagnostic system of the power inverter of central monitoring device, it is characterised in that:

The central monitoring device obtains via the network and analyzes the power semiconductor obtained by the arithmetic processing section The state of device.

7. a kind of includes the diagnostic method with the power inverter of power semiconductor of switch element, feature exists In:

Feedback letter when switch motion is carried out based on the PWM command signal and the switch element for being used to drive the switch element Number calculate the junction temperature of the switch element,

The exception for judging the power semiconductor according to the calculated junction temperature and the PWM command signal.

8. the diagnostic method of power inverter as claimed in claim 7, it is characterised in that:

Voltage and switch cut-off reference voltage when the switch element carries out switch motion to grid and transmitting interpolar carry out Compare, to generate the feedback signal,

The switch turn-off delay amount of the switch element, and base are calculated based on the PWM command signal and the feedback signal The junction temperature is calculated in the switch turn-off delay amount.

9. the diagnostic method of power inverter as claimed in claim 7 or 8, it is characterised in that:

The time series data of the junction temperature is converted into temperature amplitude frequency, using predetermined periodicity as a reference value, is come The exception of the power inverter is judged from the temperature amplitude frequency.

Technical field

The present invention relates to power inverters, in particular to the power inverter being made of power semiconductor switch element Maintenance or diagnostic techniques.

Background technique

Rolling stock and the motor suitable for large scale industry control purposes and electric system with etc. large capacity In the power inverter of frequency conversion apparatus etc., using the power semiconductor of large capacity, high voltage and high current are carried out Electric control.It in such devices, can the damage of generation system, unplanned system if breaking down during operation System stops, and there is a possibility that huge economic loss occurs.Such situation in order to prevent, needs to detect power inverter It deteriorates and abnormal, prevents damage caused by function stop, notify to safeguard necessity to related personnel, carry out power inverter Prolong life control.

As the major failure reason of power inverter, there is the overheat of semiconductor element.When the junction temperature of semiconductor chip Degree Tj (also referred to as junction temperature) is damaged when becoming rated value or more (such as being 150 DEG C in the case where Si semiconductor element). Therefore, implement heat dissipation design in power inverter.

But it is laminated with the thermal expansion coefficient material different from semiconductor chip in the interior layer of semiconductor element, it can not keep away Exempt from due to the thermal strain during operation and the generation aging of the material of solder etc..Even if making power inverter in rated value as a result, Interior operation, the thermal impedance of semiconductor element can also rise with time going by, exist due to radiating bad and partly to lead The case where body element over-temperature.In addition, according to time manpower and check cost that power semiconductor is removed to cost from device The case where, power semiconductor itself is seldom checked in common maintenance work, but in the feelings that problem and failure occurs It is disposed under condition.

Therefore, the technology as the state using easy method monitoring power inverter, it is expected that in the system runtime Between measure junction temperature technology.Although in the presence of the method for being put into temperature sensor as element in semiconductor device inside, Upper Expenses Cost is processed in element, and the response speed due to requiring temperature sensor and reliability and problem are the more.Therefore, Know to have and speculates the technology of junction temperature using the heater circuit model of semiconductor element and the temperature dependency of electrical characteristics.

For example, the example of the method for junction temperature is speculated as the temperature dependency according to the switching characteristic of semiconductor element, There is patent document 1.Disclose that there are as below methods in patent document 1: by detecting IGBT (Insulated Gate Bipolar Transistor: insulated gate bipolar transistor) element switch turn off phase in gate-emitter voltage characteristic mirror image it is flat Platform (ミ ラ ー プ ラ ト ー) stage beginning and end phases-time delay, determine IGBT element junction temperature, it is flat being recorded In the case that equal junction temperature persistently rises, aging is detected.

Summary of the invention

Problem to be solved by the invention

In patent document 1, it needs to be arranged in high voltage (forceful electric power) portion and (carries out 2 in the switch for waveform variation detection Point measurement) special circuit, in view of be suitable for existing device this point.Furthermore, it is necessary to carry out for predicting semiconductor The long-term data accumulation and analysis in the service life of element, and for bimetry will continue to obtain data until confirmation aging, i.e. Until confirmation average junction temperature degree rises, it is therefore desirable to which cost does not also consider this point.

Therefore, it is an object of the present invention to provide energy in the power inverter with multiple power semiconductors It is enough not provided with temperature sensor, and accurately detects the exception of power inverter and the electric power turn of damage in simple structure Changing device, its diagnostic system, diagnostic method and the motor control system using it.

Technical teaching for solving the problem was

The present invention be in view of the aforementioned technical background with problem and complete, enumerate its an example for it is a kind of include that there is switch element Power semiconductor power inverter comprising: for the gate driving circuit of driving switch element, can send out Feedback signal when switch element being sent to carry out switch motion；The PWM command signal for being used to switch is exported to gate driving The control unit of circuit；The temperature detecting part of the junction temperature of switch element is calculated based on PWM command signal and feedback signal；Be based on The calculation process of the state of power semiconductor is analyzed by the calculated junction temperature of temperature detecting part and PWM command signal Portion.

Invention effect

In accordance with the invention it is possible to provide the exception and damage that can accurately detect power inverter with succinct structure The power inverter of wound, its diagnostic system, diagnostic method and the motor control system using it.

Detailed description of the invention

Fig. 1 is the whole mount structure figure of the diagnostic system of the power inverter of embodiment 1.

Fig. 2 is the Local map for indicating the cross section structure of power semiconductor of embodiment 1.

Fig. 3 is the system block diagram in the case that the diagnostic system of embodiment 1 is applied to railway.

Fig. 4 is the flow chart of the acquisition junction temperature of embodiment 2.

Fig. 5 is voltage waveform and anti-between the gate-emitter for indicating the power semiconductor of switch conduction of embodiment 2 The figure of feedback signal.

Fig. 6 is voltage waveform and anti-between the gate-emitter for indicating the power semiconductor of switch cut-off of embodiment 2 The figure of feedback signal.

Fig. 7 be indicate embodiment 2 it is normal when PWM command signal and feedback signal relationship figure.

Fig. 8 is the figure for indicating the relationship of PWM command signal and feedback signal when the switch of embodiment 2 is bad.

Fig. 9 is the figure for indicating the delay of feedback signal of embodiment 2.

Figure 10 is the figure for indicating the temperature dependency of delay time of embodiment 2.

Figure 11 is the figure for indicating the time series data of embodiment 3.

Figure 12 is to indicate the temperature amplitude frequency data after the time series data by the junction temperature of embodiment 3 is converted into histogram Figure.

Figure 13 is the figure for illustrating the GUI of embodiment 3.

Specific embodiment

Hereinafter, the embodiment of the present invention is described in detail based on attached drawing.But, the present invention is not limited to following institutes The embodiment shown is explained.