阅读说明：本技术 一种硅基自适应喷涌式微流体散热基板及其制备方法 (A kind of silicon substrate is adaptively gushed the fluid for radiating heat substrate and preparation method thereof that declines ) 是由 禹淼 黄旼 张洪泽 吴静 朱健 于 2019-08-22 设计创作，主要内容包括：本发明涉及一种硅基自适应喷涌式微流体散热基板及其制备方法,散热基板由三层结构堆叠而成,自下而上依次设置支撑层、底层微流体结构层和顶层微流体结构层；支撑层上设置有入液口和支撑层出液口；底层微流体结构层上设置底层微流体通道、底层喷涌口和底层出液口；顶层微流体结构层上设置顶层微流体通道和顶层喷涌口；底层微流体通道和顶层微流体通道分别位于底层微流体结构层或顶层微流体结构层的下表面；入液口的位置与底层微流体通道的端部相对应,支撑层出液口和底层出液口的位置与顶层微流体通道的端部相对应。本发明针对微系统集成需求,解决了微流体散热模块在系统中的集成难题,并针对局部热点,有效提高散热效率。(It adaptively gushs the fluid for radiating heat substrate and preparation method thereof that declines the present invention relates to a kind of silicon substrate, heat-radiating substrate is stacked by three-decker, sets gradually supporting layer, bottom microfluidic structures layer and top layer microfluidic structures layer from bottom to top；Liquid inlet and supporting layer liquid outlet are provided on supporting layer；Bottom microfluidic channel, bottom are arranged on bottom microfluidic structures layer to gush mouth and bottom liquid outlet；Top layer microfluidic channel and top layer are arranged on top layer microfluidic structures layer to gush mouth；Bottom microfluidic channel and top layer microfluidic channel are located at the lower surface of bottom microfluidic structures layer or top layer microfluidic structures layer；The position of liquid inlet is corresponding with the end of bottom microfluidic channel, and the position of supporting layer liquid outlet and bottom liquid outlet is corresponding with the end of top layer microfluidic channel.The present invention integrates demand for micro-system, solves the integrated problem of microfluid radiating module in systems, and be directed to hot localised points, effectively improves radiating efficiency.)

The fluid for radiating heat substrate that declines 1. a kind of silicon substrate is adaptively gushed, it is characterised in that: stacked by three-decker, from lower and On set gradually supporting layer (1), bottom microfluidic structures layer (2) and top layer microfluidic structures layer (3)；On the supporting layer (1) It is provided with liquid inlet (11) and supporting layer liquid outlet (12)；It is logical that bottom microfluid is set on the bottom microfluidic structures layer (2) Road (21), bottom are gushed mouth (22) and bottom liquid outlet (23)；Top layer microfluid is set on the top layer microfluidic structures layer (3) Channel (31) and top layer gush mouth (32)；The bottom gushs mouth (22) and top layer gushs mouth (32) in heat-radiating substrate fore-and-aft plane On projection be overlapped, and in array distribution in the central area of heat-radiating substrate；The bottom microfluidic channel (21) is located at bottom The lower surface of microfluidic structures layer (2), the top layer microfluidic channel (31) are located under top layer microfluidic structures layer (3) Surface；The bottom microfluidic channel (21) be gush through bottom mouth (22) horizontal and vertical two pairs of two-way microfluids it is logical Road, the top layer microfluidic channel (31) be respectively through top layer gush mouth (32) horizontal and vertical two pairs of two-way microfluids it is logical Road；The position of the liquid inlet (11) is corresponding with the end of bottom microfluidic channel (21), the supporting layer liquid outlet (12) It is corresponding with the end of top layer microfluidic channel (31) with the position of bottom liquid outlet (23).

2. heat-radiating substrate according to claim 1, it is characterised in that: the bottom microfluidic channel (21) include be connected into The mainstream fluid channel of liquid mouth (11) be connected to bottom and gush several tributary fluid channels of mouth (22), the top layer microfluid is logical Road (31) include connection bottom liquid outlet (23) mainstream fluid channel be connected to top layer and gush several tributary fluids of mouth (32) Channel.

3. heat-radiating substrate according to claim 2, it is characterised in that: the liquid inlet (11), supporting layer liquid outlet (12) It is of same size with the opening width of bottom liquid outlet (23) and mainstream fluid channel.

4. heat-radiating substrate according to claim 1, it is characterised in that: the bottom is gushed the geometric center point of mouth (22) Set it is corresponding with the center position of bottom microfluidic channel (21), the top layer gush mouth (32) geometric center point position with The center position of top layer microfluidic channel (31) is corresponding, the bottom gush mouth (22) area it is logical less than bottom microfluid The central rectangular area in road (21), the top layer gush mouth (32) area be less than top layer microfluidic channel (31) central rectangular Area.

5. heat-radiating substrate according to claim 1, it is characterised in that: the volume of the bottom microfluidic channel (21) is greater than Equal to the volume of top layer microfluidic channel (31).

6. heat-radiating substrate according to claim 1, it is characterised in that: the supporting layer (1), bottom microfluidic structures layer (2) and top layer microfluidic structures layer (3) is all made of silicon wafer as baseplate material, and the heat-radiating substrate passes through three-layer silicon wafer wafer level It stacks.

7. heat-radiating substrate according to claim 1, it is characterised in that: the thickness etc. of the bottom microfluidic structures layer (2) It gushs the sum of the thickness of mouth (22) in the thickness and bottom of bottom microfluidic channel (21), the top layer microfluidic structures layer (3) Thickness be equal to the thickness of top layer microfluidic channel (31) and bottom is gushed the sum of the thickness of mouth 32.

8. heat-radiating substrate according to claim 1, it is characterised in that: the upper surface of the top layer microfluidic structures layer (3) It is covered with the layer gold that thickness is greater than 2 μm.

9. the preparation method of fluid for radiating heat substrate of declining of adaptively being gushed according to the described in any item silicon substrates of claim 8, special Sign is: it comprises the following steps:

(1) dry etching or wet corrosion technique are used, forms liquid inlet (11) and supporting layer liquid outlet on supporting layer (1) (12), bottom microfluidic channel (21) is formed on bottom microfluidic structures layer (2), bottom is gushed mouth (22) and bottom liquid outlet (23), top layer microfluidic channel (31) is formed on top layer microfluidic structures layer (3) and top layer gushs mouth (32)；

(2) three-layer silicon wafer bonding face successively evaporate or sputtering sedimentation metal adhesion layers and evaporation or sputtering or electroplating deposition metallic bond Layer is closed, wherein metal bonding layer is the metal that binary or multi-element eutectic are bonded；

(3) three-layer silicon wafer completes the three level stack of heat-radiating substrate by 2 wafer level eutectic bondings；

(4) in the plating of the upper surface of top layer microfluidic structures layer (3) or hydatogenesis layer gold.

10. preparation method according to claim 9, it is characterised in that: in the step (1), the silicon wafer is that thickness is small In 200 μm of thin slice.

Technical field

The invention belongs to microelectronics and microsystems technology field, adaptively gush and decline in particular to a kind of silicon substrate Fluid for radiating heat substrate and preparation method thereof.

Background technique

With the development of microelectronics and micro-system integrated technology, the integration density of chip and module is higher and higher, micro-system It is integrated to develop to small size, high density, high-performance, multifunction and three-dimensional stacked direction, therefore micro-system opposite heat tube is managed More stringent requirements are proposed.The superiority and inferiority of heat management performance will have a direct impact on the service life of micro-system, Performance And Reliability.Especially It is in the system of high power density integrated chip, chip corresponding region will form high density, the hot localised points of very small region, if Part is unable to get effective heat dissipation, and heat will persistently be accumulated, and system temperature sharply increases.Heat management for hot localised points is mesh The key points and difficulties problem of preceding micro-system integrated heat pipe reason.

Microfluid heat dissipation technology is a kind of active heat removal technology, relatively traditional passive heat dissipation, and radiating efficiency can mention at double It rises.At present for the main promising three categories of microfluid heat dissipation: conventional heat dissipation, two phase heat-radiation and injection are radiated.Conventional heat dissipation is logical Crossing fluid has stable large area heat dissipation effect to chip cooling in chip bottom circulation, but fluid flow demand is higher； Two phase heat-radiation vaporizes to form two phase flow when referring to fluid liquid cooled wafer, has high cooling efficiency, while vaporization also results in Local flow resistance proliferation issues；Injection heat dissipation has distributed jet structure, is, tool directly cooling for chip hot localised points position There is higher radiating efficiency, but microfluidic structures are complicated.The radiating efficiency of above-mentioned three kinds of microfluids heat dissipation steps up, and belongs to The embedded microfluid radiating module outside the chip-scale, the processing compatibility integrated for micro-system is poor, be not easy to be It is integrated in system, for three-dimensional stacked micro-system, directly integrated chip can not be realized and radiated.It is needed for micro-system is integrated It asks, the integrated problem of urgent need to resolve microfluid radiating module in systems, and is directed to hot localised points, in conjunction with above-mentioned three kinds of microfluids The advantage of heat dissipation, effectively improves radiating efficiency.

Summary of the invention

To solve the above problems, adaptively gushing fluid for radiating heat substrate and its preparation of declining the present invention provides a kind of silicon substrate Method integrates demand for micro-system, solves the integrated problem of microfluid radiating module in systems, and be directed to localized heat Point, effectively improves radiating efficiency.

To achieve the above object, technical scheme is as follows:

A kind of silicon substrate is adaptively gushed the fluid for radiating heat substrate that declines, and is stacked by three-decker, is successively set from bottom to top Set supporting layer, bottom microfluidic structures layer and top layer microfluidic structures layer, and include liquid inlet, liquid outlet, microfluidic channel and It gushs four kinds of fluid channel structures of mouth；Liquid inlet and supporting layer liquid outlet are provided on supporting layer；On bottom microfluidic structures layer Setting bottom microfluidic channel, bottom are gushed mouth and bottom liquid outlet；It is logical that top layer microfluid is set on top layer microfluidic structures layer Road and top layer are gushed mouth；Bottom gushs mouth and top layer is gushed, and projection of the mouth on heat-radiating substrate fore-and-aft plane is overlapped, and is in array It is distributed in the central area of heat-radiating substrate；Bottom microfluidic channel and top layer microfluidic channel are located at bottom microfluidic structures The lower surface of layer or top layer microfluidic structures layer, bottom microfluidic channel are respectively to run through bottom to gush horizontal and vertical the two of mouth To two-way microfluidic channel, top layer microfluidic channel is respectively to run through top layer to gush horizontal and vertical two pairs of two-way microfluids of mouth Channel；The position of supporting layer is corresponding with the end of bottom microfluidic channel, the position of supporting layer liquid outlet and bottom liquid outlet It is corresponding with the end of top layer microfluidic channel.

Top layer gushs mouth corresponding to heat dissipation region needed for chip bottom, if there are special knots for chip bottom portion Structure, the top layer mouth of gushing of corresponding position in mouthful array of gushing can remove.

Bottom microfluidic channel include be connected to the mainstream fluid channel of supporting layer be connected to bottom and gush several tributaries of mouth Fluid channel.Top layer microfluidic channel include bottom liquid outlet mainstream fluid channel be connected to top layer and gush several tributaries of mouth Fluid channel.

Opening width and the mainstream fluid channel of supporting layer, supporting layer liquid outlet and bottom liquid outlet it is of same size.

Bottom gush mouth centre of figure point position it is corresponding with the center position of bottom microfluidic channel, bottom is gushed The area of mouth is less than the central rectangular area of bottom microfluidic channel.Top layer gush mouth centre of figure point position and top layer miniflow The center position in body channel is corresponding, top layer gush mouth area be less than top layer microfluidic channel central rectangular area.

The length and width size of bottom gushs mouth or top layer is gushed mouth is all larger than 20 μm, and bottom gushs mouth or top layer is gushed Mouthful with a thickness of 20-100 μm.

The volume of bottom microfluidic channel is more than or equal to the volume of top layer microfluidic channel.

The width of each tributary fluid channel be 20-500 μm, tributary fluid channel with a thickness of 20-500 μm, adjacent tributary The spacing of fluid channel is greater than 20 μm.

Supporting layer, bottom microfluidic structures layer and top layer microfluidic structures layer are all made of silicon wafer as baseplate material, heat dissipation Substrate is stacked by three-layer silicon wafer wafer level.

The thickness of bottom microfluidic structures layer is equal to the thickness of bottom microfluidic channel and bottom is gushed the sum of the thickness of mouth, The thickness of top layer microfluidic structures layer is equal to the thickness of top layer microfluidic channel and bottom is gushed the sum of the thickness of mouth 32.

The upper surface of top layer microfluidic structures layer is covered with the layer gold that thickness is greater than 2 μm, the welding for chip.

A kind of silicon substrate is adaptively gushed the preparation method of fluid for radiating heat substrate of declining, and is comprised the following steps:

(1) dry etching or wet corrosion technique are used, liquid inlet and supporting layer liquid outlet are formed on supporting layer, the bottom of at Form bottom microfluidic channel on layer microfluidic structures layer, bottom is gushed mouth and bottom liquid outlet, in top layer microfluidic structures layer Upper formation top layer microfluidic channel and top layer are gushed mouth；

(2) three-layer silicon wafer bonding face successively evaporate or sputtering sedimentation metal adhesion layers and evaporation or sputtering or electroplating deposition gold Belong to bonded layer, wherein metal bonding layer is the metal that binary or multi-element eutectic are bonded；

(3) three-layer silicon wafer completes the three level stack of heat-radiating substrate by 2 wafer level eutectic bondings；

(4) in the plating of the upper surface of top layer microfluidic structures layer or hydatogenesis layer gold.

In step (1), silicon wafer is thin slice of the thickness less than 200 μm, and processing step need to subtract in conjunction with interim bonding technology, silicon wafer Thin technique and the solution bonding technology being temporarily bonded, prepare thin slice microfluidic channel structure.

In substrate preparation, as desired by plane needed for the system integration or 3-dimensional metal interconnection process and blunt Chemical industry skill, preparation are used for the pinboard and encapsulating structure of the system integration, realize the system integration of microfluid heat-radiating substrate.

Base is adaptively gushed the working principle of fluid for radiating heat substrate of declining:

Fluid flows into bottom microfluidic structures layer from the supporting layer of supporting layer with horizontal and vertical two pairs in pairs simultaneously；By Bottom microfluidic channel flows to bottom simultaneously with horizontal and vertical two pairs opposite directions and gushs mouth, then gushs from bottom mouth of gushing To top layer gush mouth flow into top layer microfluidic structures layer, direct cooled wafer bottom, the process is with operative liquid fluid vaporization； After fluid forms two phase flow, bottom microfluid is passed through simultaneously with horizontal and vertical two pairs of inverse directions by top layer microfluidic channel Structure sheaf flows to bottom liquid outlet, and then flows out from supporting layer liquid outlet；It should horizontal and vertical in the process while streaming flow benefit The flow for repaying adjacent mouthful fluid of gushing avoids the formation of the surge of two phase flow process flow resistance and brings flow stagnation, microfluid is caused to radiate The problem of failure, forms stable microfluid heat dissipation cyclic process.

Beneficial effect

The processing compatibility that microfluid heat-radiating substrate in the technical program has chip, modular system integrated, can apply In the pinboard and encapsulating structure of the system integration, the system integration of microfluidic module is realized；Microfluid heat-radiating substrate and chip Bottom directly contacts, and fluid liquid is gushed to chip bottom and may be vaporized in radiation processes, can be formed with high cooling efficiency Gas-liquid two-phase heat dissipation, and structure is simpler than injection heat dissipation.

Microfluid heat-radiating substrate in the technical program, bottom and top layer microfluidic structures respectively have horizontal and vertical two pairs pairs To fluid channel, each grid-shaped structure in layer fluid channel, bottom and top layer grid intersection point are overlapped, and intersection point is fluid surges to core The flow of the mouth of gushing of piece bottom, mouth of gushing can prevent big in chip heat flow density by mutually compensating between adjacent mouth of gushing Near position, fluid liquid is vaporized at mouth of gushing, and then flow stagnation phenomenon occurs in flow resistance surge, leads to microfluid failure Problem, the structure have automatic adjusument effect, and microfluid flow resistance is stablized.

Detailed description of the invention

Present invention will be further explained below with reference to the attached drawings and examples.

Fig. 1 is that silicon substrate is adaptively gushed the top view of fluid for radiating heat substrate supporting layer of declining；

Fig. 2 be silicon substrate adaptively gush decline fluid for radiating heat substrate supporting layer just set perspective view；

Fig. 3 is that silicon substrate is adaptively gushed the inverted perspective view of fluid for radiating heat substrate supporting layer of declining；

Fig. 4 is that silicon substrate is adaptively gushed the top view of fluid for radiating heat substrate bottom microfluidic structures layer of declining；

Fig. 5 be silicon substrate adaptively gush decline fluid for radiating heat substrate bottom microfluidic structures layer just set perspective view；

Fig. 6 is that silicon substrate is adaptively gushed the inverted perspective view of fluid for radiating heat substrate bottom microfluidic structures layer of declining；

Fig. 7 is that silicon substrate is adaptively gushed the top view of fluid for radiating heat substrate top layer microfluidic structures layer of declining.

Fig. 8 be silicon substrate adaptively gush decline fluid for radiating heat substrate top layer microfluidic structures layer just set perspective view；

Fig. 9 is that silicon substrate is adaptively gushed the inverted perspective view of fluid for radiating heat substrate top layer microfluidic structures layer of declining；

Figure 10 be silicon substrate adaptively gush decline fluid for radiating heat substrate just set exploded perspective figure；

Figure 11 is that silicon substrate is adaptively gushed the inversion exploded perspective figure of fluid for radiating heat substrate of declining.

In attached drawing:

1, supporting layer 11, liquid inlet 12, supporting layer liquid outlet 2, bottom microfluidic structures layer

21, bottom microfluidic channel 22, bottom are gushed mouth 23, bottom liquid outlet 3, top layer microfluidic structures layer

31, top layer microfluidic channel 32, top layer are gushed mouth

Specific embodiment

In order to make the objectives, technical solutions, and advantages of the present invention clearer, with reference to embodiments, to the present invention It is further elaborated.It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention, it is not used to Limit the present invention.