阅读说明：本技术 频率和极化可重构的固态等离子体天线 (Frequency and polarization reconfigurable solid state plasma antenna ) 是由 刘少斌 徐岩 李威 周永刚 陈鑫 于 2019-08-14 设计创作，主要内容包括：本发明公开了一种频率和极化可重构的固态等离子体天线,包括自下而上依次设置的射频PCB板、介质基板和金属地板,所述介质基板的下方、射频PCB板上印刷有相互独立工作的第一微带馈线和第二微带馈线,所述金属地板的上表面中间位置开设有上下贯穿的十字交叉缝隙,该十字交叉缝隙的竖直缝隙和水平缝隙的两端内分别填充有相互独立的S-PIN固态等离子体。本发明的结构简单,且可独立控制每个固态等离子体单元,工作频段不受控制,不需要复杂的馈电网络,同时实现了固态等离子体天线频率和极化的可重构。(The invention discloses a frequency and polarization reconfigurable solid plasma antenna, which comprises a radio frequency PCB (printed circuit board), a dielectric substrate and a metal floor, wherein the radio frequency PCB, the dielectric substrate and the metal floor are sequentially arranged from bottom to top, a first microstrip feeder and a second microstrip feeder which work independently are printed below the dielectric substrate and on the radio frequency PCB, a vertically-penetrating cross gap is formed in the middle of the upper surface of the metal floor, and S-PIN solid plasmas which are independent from each other are respectively filled in the vertical gap and the two ends of the horizontal gap of the cross gap. The invention has simple structure, can independently control each solid-state plasma unit, has uncontrolled working frequency band, does not need a complex feed network, and simultaneously realizes the reconfiguration of the frequency and polarization of the solid-state plasma antenna.)

1. A frequency and polarization reconfigurable solid state plasma antenna, characterized by: the metal floor board comprises a radio frequency PCB (1), a dielectric substrate (2) and a metal floor board (3), wherein the radio frequency PCB (1), the dielectric substrate board (2) and the metal floor board (3) are sequentially arranged from bottom to top, a first microstrip feeder line (4) and a second microstrip feeder line (5) which work independently are printed on the radio frequency PCB (1) below the dielectric substrate board (2), a cross gap (6) which penetrates through the metal floor board (3) from top to bottom is formed in the middle position of the upper surface of the metal floor board, and S-PIN solid plasmas which are independent from each other are filled in the vertical gap of the cross gap and the two ends of.

2. A frequency and polarization reconfigurable solid state plasma antenna as claimed in claim 1, wherein: the dielectric substrate (2) is a high-resistance silicon substrate with low electrical conductivity.

3. A frequency and polarization reconfigurable solid state plasma antenna as claimed in claim 1, wherein: the first microstrip feeder line (4) is horizontally arranged and spans across the crossed slot (6), the second microstrip feeder line (5) is vertically arranged and spans across the crossed slot (6), the first microstrip feeder line (4) and the second microstrip feeder line (5) are identical in length and are axisymmetric with respect to a diagonal line of the dielectric substrate (2).

4. A frequency and polarization reconfigurable solid state plasma antenna as claimed in claim 1, wherein: the vertical and horizontal slits of the crisscross slit (6) do not participate in radiation at the same time.

5. a frequency and polarization reconfigurable solid state plasma antenna as claimed in claim 1, wherein: and a first S-PIN solid plasma (7) and a second S-PIN solid plasma (8) which are different in length are arranged at two ends of the vertical gap.

6. A frequency and polarization reconfigurable solid state plasma antenna as claimed in claim 1, wherein: and a first S-PIN solid plasma (7) and a second S-PIN solid plasma (8) which are different in length are arranged at two ends of the horizontal gap.

7. A frequency and polarization reconfigurable solid state plasma antenna as claimed in claim 1, wherein: the radio frequency PCB (1), the dielectric substrate (2) and the metal floor (3) are all of a square structure.

8. A frequency and polarization reconfigurable solid state plasma antenna as claimed in claim 1, wherein: the S-PIN solid plasma is electrically connected with a bias circuit on the radio frequency PCB (1), and bias voltage is applied to the bias circuit and used for changing the carrier concentration of the solid plasma, so that the S-PIN solid plasma structure presents dielectric properties or metal-like properties.

9. A frequency and polarization reconfigurable solid state plasma antenna of claim 8, wherein: and a negative metal electrode is arranged above the N region of the solid plasma of the S-PIN solid plasma, is connected with the negative electrode of the bias circuit and is grounded by the contact of a metal floor (3).

Technical Field

The invention belongs to the field of antenna and semiconductor technology, and particularly relates to a frequency and polarization reconfigurable solid plasma antenna.

background

With the change of science and technology, people have higher and higher requirements on wireless communication. On the one hand, it is desired to increase the capacity of wireless communication and increase the functions of the entire system, and on the other hand, it is desired to reduce the cost. Therefore, this also places increasing demands on the performance of the antenna system in critical parts thereof. The slot antenna has the advantages of small volume, low profile, light weight, low cost, easy processing, easy realization of broadband, multi-frequency and circular polarization work, and the like. Meanwhile, the slot antenna has strong attraction in the application of the mobile communication field by combining the development trend and the requirement of miniaturization and light weight of the communication system.

The solid plasma can be formed in the intrinsic layer of the semiconductor in an electrically or optically excited mode, and the conductivity of the formed solid plasma can be compared with that of metal when the carrier concentration in the formed solid plasma reaches a certain value. A solid plasma antenna is a radiator and feed network that use solid plasma to form the antenna. When not excited into solid plasma, it is the semiconductor material that exhibits dielectric properties; when excited as solid plasma, the metal-like properties thereof play a role.

Solid-state plasma can be generated in the I region by applying excitation voltage to two ends of a PIN tube made of semiconductor material. The solid-state plasma reconfigurable antenna constructed by utilizing the PIN unit has the advantages of flexible switching of working frequency bands, wide radiation direction range, good stealth characteristic, compatibility with a microelectronic process, capability of realizing frequency and directional diagram reconfiguration and the like, is an effective technical way for realizing miniaturization of the antenna and improving the performance of a radar and a communication system, and becomes a research hotspot at home and abroad.

Disclosure of Invention

The purpose of the invention is as follows: the invention aims to provide a frequency and polarization reconfigurable solid-state plasma antenna, which changes the size and the state of a gap by controlling the on-off of S-PIN so as to realize the reconfiguration of the frequency of the solid-state plasma antenna; the reconfiguration of the polarization of the solid-state plasma antenna is realized by switching two microstrip feed lines of the antenna; and each S-PIN solid state plasma can be independently controlled.

the technical scheme is as follows: in order to achieve the above purpose, the invention discloses a frequency and polarization reconfigurable solid state plasma antenna, which is characterized in that: the metal floor board comprises a radio frequency PCB board, a dielectric substrate and a metal floor board which are sequentially arranged from bottom to top, wherein a first micro-strip feeder line and a second micro-strip feeder line which work independently are printed below the dielectric substrate board and on the radio frequency PCB board, a cross gap which penetrates through the upper surface and the lower surface is formed in the middle of the upper surface of the metal floor board, and S-PIN solid plasmas which are independent from each other are respectively filled in two ends of a vertical gap and a horizontal gap of the cross gap.

The dielectric substrate is a high-resistance silicon substrate with low electrical conductivity.

Preferably, the first microstrip feed line is horizontally arranged and strides across the crisscross slot, the second microstrip feed line is vertically arranged and strides across the crisscross slot, and the first microstrip feed line and the second microstrip feed line have the same length and are axisymmetric with respect to a diagonal line of the dielectric substrate.

Furthermore, the vertical and horizontal slots of the criss-cross slot do not participate in radiation at the same time.

Furthermore, a first S-PIN solid plasma and a second S-PIN solid plasma which are different in length are arranged at two ends of the vertical gap.

Furthermore, a first S-PIN solid plasma and a second S-PIN solid plasma which are different in length are arranged at two ends of the horizontal gap.

Preferably, the radio frequency PCB, the dielectric substrate and the metal floor are all in a square structure.

And moreover, the S-PIN solid plasma is electrically connected with a bias circuit positioned on the radio frequency PCB, and bias voltage is applied to the bias circuit and used for changing the carrier concentration of the solid plasma, so that the S-PIN solid plasma structure presents dielectric properties or metal-like properties.

Furthermore, a negative metal electrode is arranged above the N region of the solid plasma of the S-PIN solid plasma, and the negative metal electrode is connected with the negative electrode of the bias circuit and is grounded through the contact of a metal floor. In the invention, a cathode metal electrode is positioned above a solid plasma N region, is connected with a peripheral bias circuit cathode and is used for applying cathode bias voltage; the invention adopts microstrip coupling feed, and the negative electrode metal electrode is contacted with the upper metal floor, thus elements such as choke inductance and the like are not needed, a complex bias circuit is saved, and a feed network is simplified.

Has the advantages that: compared with the prior art, the invention has the following remarkable advantages:

(1) By applying bias voltage, the invention changes the characteristic of the solid plasma to ensure that the solid plasma is in a conducting or cut-off state, the equivalent length of the slot is changed, the frequency of the antenna is correspondingly changed, but the lengths of the S-PIN at two ends of the same slot are different, so that the distance proportion between the first microstrip feeder line and the second microstrip feeder line and two sides of the slot is basically consistent under different working frequencies, and the impedance matching of the antenna under the two working frequencies is ensured;

(2) The cathode metal electrode is positioned above the solid plasma N region, is connected with the cathode of a peripheral bias circuit and is used for applying cathode bias voltage; the invention adopts microstrip coupling feed, and the negative metal electrode is contacted with the upper metal floor, so that elements such as choke inductance and the like are not needed, a complex bias circuit is saved, and a feed network is simplified;

(3) The antenna adopts microstrip coupling feed, a DC blocking circuit is not required to be designed, and the whole DC bias circuit is designed on a radio frequency PCB board, so that the influence on the radiation performance of the antenna is small; the two microstrip feed lines work independently, and the change of the antenna polarization mode can be realized without designing a complex feed network;

(4) The invention has simple structure, can independently control each solid-state plasma unit, has uncontrolled working frequency band, does not need a complex feed network, and simultaneously realizes the reconfiguration of the frequency and polarization of the solid-state plasma antenna.

Drawings

FIG. 1 is a schematic structural view of the present invention;

FIG. 2 is a schematic structural diagram of a dielectric substrate according to the present invention;

Fig. 3 is a side view of the present invention.

Detailed Description

The technical scheme of the invention is further explained by combining the attached drawings.

as shown in fig. 1, the frequency and polarization reconfigurable solid-state plasma antenna of the invention comprises a radio frequency PCB board 1, a dielectric substrate 2, a metal floor 3, a first microstrip feed line 4, a second microstrip feed line 5, a crisscross slot 6 and a plurality of S-PIN solid-state plasmas.

As shown in fig. 1, 2 and 3, the radio frequency PCB board 1, the dielectric substrate 2 and the metal floor 3 are sequentially arranged from bottom to top, a first microstrip feeder 4 and a second microstrip feeder 5 which work independently are printed on the radio frequency PCB board 1 below the dielectric substrate 2, the first microstrip feeder 4 is horizontally arranged and crosses over the cross slot 6, the second microstrip feeder 5 is vertically arranged and crosses over the cross slot 6, the first microstrip feeder 4 and the second microstrip feeder 5 have the same length and are symmetrical about a diagonal line axis of the dielectric substrate 2, the first microstrip feeder and the second microstrip feeder are not fed at the same time and work independently, and the feeders determine slots radiated in the cross slot, thereby determining whether the antenna is horizontally polarized or vertically polarized. When the first microstrip feeder line 4 feeds, the second microstrip feeder line 5 does not work, the polarization direction of the antenna is the linear polarization direction along the long side of the first microstrip feeder line 4, the state is specified to be a horizontal polarization mode, and when the antenna adopts the second microstrip feeder line 5 to feed, the antenna is vertically polarized, so that the reconstruction of the antenna polarization mode is realized. Crosstalk basically does not occur between the first microstrip feeder line 4, the second microstrip feeder line 5 and the metal floor 3, energy loss in the dielectric substrate is small, and the efficiency of the whole antenna is improved. The antenna adopts microstrip coupling feed, a DC blocking circuit is not required to be designed, and the whole DC bias circuit is designed on a radio frequency PCB board, so that the influence on the radiation performance of the antenna is small; and two microstrip feeder lines work independently, and the change of the antenna polarization mode can be realized without designing a complex feed network.

The middle position of the upper surface of the metal floor 3 is provided with a vertically-penetrating cross gap 6, and two ends of a vertical gap and a horizontal gap of the cross gap are respectively filled with mutually-independent S-PIN solid plasmas. The vertical slot and the horizontal slot of the crisscross slot 6 do not participate in radiation at the same time, and the radiated slots depend on the working states of the first microstrip feeder line 4 and the second microstrip feeder line 5 on the lower surface of the dielectric substrate 2. And a first S-PIN solid plasma 7 and a second S-PIN solid plasma 8 with different lengths are arranged at two ends of the vertical gap. And a first S-PIN solid plasma 7 and a second S-PIN solid plasma 8 with different lengths are arranged at two ends of the horizontal gap. The length of the first S-PIN solid plasma 7 is longer than the length of the second S-PIN solid plasma 8. The invention has simple structure, can independently control each solid-state plasma unit, has uncontrolled working frequency band, does not need a complex feed network, and simultaneously realizes the reconfiguration of the frequency and polarization of the solid-state plasma antenna.

The dielectric substrate 2 is a high-resistance silicon substrate with low electrical conductivity, and the radio frequency PCB board 1, the dielectric substrate 2 and the metal floor 3 are all of square structures, so that the whole antenna structure is more symmetrical, and other performances of the antenna in different states are basically consistent.

The S-PIN solid plasma is electrically connected with a bias circuit on the radio frequency PCB board 1, and bias voltage is applied to the bias circuit and used for changing the carrier concentration of the solid plasma, so that the S-PIN solid plasma structure presents dielectric properties or metal-like properties. And a negative metal electrode is arranged above the N region of the solid plasma of the S-PIN solid plasma, is connected with the negative electrode of the bias circuit and is grounded by contacting with the metal floor 3. In the invention, a cathode metal electrode is positioned above a solid plasma N region, is connected with a peripheral bias circuit cathode and is used for applying cathode bias voltage; the invention adopts microstrip coupling feed, and the negative electrode metal electrode is contacted with the upper metal floor, thus elements such as choke inductance and the like are not needed, a complex bias circuit is saved, and a feed network is simplified.

When the bias voltage applied to the metal electrode of the S-PIN solid plasma is small, the concentration distribution of the whole solid plasma area is uneven, and the concentration is low, and at the moment, the whole structure shows a dielectric characteristic; when the bias voltage is increased to a certain value, the concentration of the whole solid plasma region is increased to reach 1018cm < -3 >, the conductivity can be compared with that of metal, and the S-PIN structure is in a conducting state and shows a metalloid characteristic. According to the difference of bias voltage, the S-PIN structure shows a medium or metal-like characteristic, the length of the gap can be dynamically adjusted, when two S-PIN units in the same gap are cut off, the equivalent length of the gap is increased, current is in a symmetrical standing wave state along the midpoint of the long gap, and the frequency of the antenna is lower at the moment; when two S-PIN units in the same gap are conducted, the equivalent length of the gap is shortened, and the frequency of the antenna is higher. And the reconfiguration of the antenna frequency is realized by changing the working state of the S-PIN unit. And by optimizing the length of the slot, the size of the S-PIN and the position of the microstrip feeder, the distance between the feeder and the short side of the slot is always at the position of one twentieth wavelength in different frequency states of the antenna, and the impedance matching of the antenna is ensured.

According to the invention, by applying bias voltage, the characteristics of the solid plasma are changed to enable the solid plasma to be in a conducting state or a cut-off state, the equivalent length of the slot is changed, the frequency of the antenna is correspondingly changed, but the lengths of the S-PIN at two ends of the same slot are different, so that the distance proportion between the first microstrip feeder line and the second microstrip feeder line and two sides of the slot is basically consistent under different working frequencies, and the impedance matching of the antenna under the two working frequencies is ensured.