阅读说明：本技术 一种硅片检测装置 (Silicon wafer detection device ) 是由 卢亚宾 梁坤 张聪 云宏霞 曹深深 于 2021-08-27 设计创作，主要内容包括：本发明涉及硅片检测设备领域,公开了一种硅片检测装置。其包括传送单元、发光单元、反射单元、第一采集单元和第二采集单元。传送单元能够将硅片由第一检测位置沿传送方向传送至第二检测位置；发光单元包括第一光源和第二光源,分别置于传送单元垂直于传送方向的两侧；反射单元置于传送单元远离第一光源的一侧,反射单元包括两个反射镜,沿传送方向间隔设置并形成采集间隙；第一采集单元置于传送单元远离第二光源的一侧；第二采集单元设置在反射单元远离传送单元的一侧,第二采集单元能够通过采集间隙采集处于第一检测位置与第二检测位置之间的硅片的图像。本发明在同一工序内完成硅片的崩边及脏污的检测,提高了结构紧凑性。(The invention relates to the field of silicon wafer detection equipment and discloses a silicon wafer detection device. The device comprises a transmission unit, a light-emitting unit, a reflecting unit, a first acquisition unit and a second acquisition unit. The conveying unit can convey the silicon wafer from the first detection position to the second detection position along the conveying direction; the light-emitting unit comprises a first light source and a second light source which are respectively arranged at two sides of the conveying unit, which are vertical to the conveying direction; the reflecting unit is arranged on one side of the transmitting unit far away from the first light source, comprises two reflecting mirrors and is arranged at intervals along the transmitting direction to form a collecting gap; the first acquisition unit is arranged on one side of the transmission unit far away from the second light source; the second acquisition unit is arranged on one side of the reflection unit far away from the transmission unit, and the second acquisition unit can acquire images of the silicon wafer between the first detection position and the second detection position through the acquisition gap. The invention can complete the detection of edge breakage and dirt of the silicon chip in the same process, and improves the structural compactness.)

1. A silicon wafer detection apparatus, comprising:

the conveying unit can convey the silicon chip (10) from a first detection position to a second detection position along a conveying direction, and the two side edges of the silicon chip (10) along the conveying direction are a first edge and a second edge respectively;

the light-emitting unit comprises a first light source (1) and a second light source (2), and the first light source (1) and the second light source (2) are respectively arranged on two sides of the conveying unit, which are perpendicular to the conveying direction;

the reflecting unit (5) is arranged on one side, far away from the first light source (1), of the conveying unit, the reflecting unit (5) comprises two reflecting mirrors (51), and the two reflecting mirrors (51) are arranged at intervals along the conveying direction and form collecting gaps (511);

the first acquisition unit is arranged on one side of the conveying unit, which is far away from the second light source (2), and can acquire an image of the first edge through one of the reflectors (51) when the silicon wafer (10) is positioned at the first detection position and can acquire an image of the second edge through the other reflector (51) when the silicon wafer (10) is positioned at the second detection position;

the second acquisition unit is arranged on one side, far away from the transmission unit, of the reflection unit (5), and can acquire the image of the silicon wafer (10) between the first detection position and the second detection position through the acquisition gap (511).

2. The silicon wafer inspection apparatus according to claim 1, wherein the conveying unit comprises two conveying members (6) arranged at intervals in the conveying direction, the conveying members (6) can convey the silicon wafer (10) in the conveying direction, a detection space (61) is formed between the two conveying members (6), and the reflecting unit (5) is arranged opposite to the detection space (61); when the silicon wafer (10) is located at the first detection position, the first edge of the silicon wafer (10) is located in the detection space (61), and when the silicon wafer (10) is located at the second detection position, the second edge of the silicon wafer (10) is located in the detection space (61).

3. The silicon wafer detection device according to claim 2, wherein one ends of the two reflectors (51) far away from the transmission unit are obliquely arranged towards the direction close to each other, and the first collection unit is arranged opposite to the reflection unit (5).

4. The silicon wafer detection apparatus according to claim 3, wherein the first collecting unit comprises two first collecting members (3) arranged along the conveying direction, and the two first collecting members (3) are arranged opposite to the two reflectors (51).

5. The silicon wafer detection device according to claim 3, wherein the first collecting unit comprises a first collecting member (3), the first collecting member (3) is an area-array camera, the first collecting member (3) is arranged opposite to the reflection unit (5), and the first collecting member (3) can simultaneously collect images of the first edge and the second edge through two reflectors (51).

6. The silicon wafer detection device according to claim 4 or 5, wherein the first light source (1) is a surface light source, a light transmission channel is arranged on the first light source (1), the first light source (1) is arranged between the first collecting unit and the conveying unit, and the first collecting unit can collect the images of the first edge and the second edge through the light transmission channel.

7. The silicon wafer inspection apparatus according to claim 4 or 5, wherein the first light source (1) is provided in two, the two first light sources (1) are arranged at intervals along the conveying direction, the optical paths of the two first light sources (1) are arranged obliquely to the conveying direction, the two first light sources (1) respectively irradiate the first edge of the silicon wafer (10) at the first inspection position and the second edge of the silicon wafer (10) at the second inspection position, and the first collecting unit is disposed between the two first light sources (1).

8. The silicon wafer detection device according to any one of claims 1 to 5, wherein the second collection unit comprises a second collection member (4), the second collection member (4) is a line camera, the second light source (2) is disposed between the reflection unit (5) and the second collection member (4) and is provided with a light transmission gap, the light transmission gap is opposite to the collection gap (511), and the second collection member (4) can sequentially pass through the light transmission gap and the collection gap (511) to collect the image of the silicon wafer (10).

9. The silicon wafer inspection apparatus according to any one of claims 1 to 5, further comprising a loading unit capable of picking up the silicon wafer (10) and supplying the silicon wafer (10) to the transfer unit.

10. The silicon wafer inspection apparatus according to any one of claims 1 to 5, wherein the reflection unit (5) further comprises adjustment frames (52), each of the reflection mirrors (51) is provided on one of the adjustment frames (52), and the adjustment frames (52) are capable of adjusting the angle of the reflection mirror (51).

Technical Field

The invention relates to the field of silicon wafer detection equipment, in particular to a silicon wafer detection device.

Background

The silicon chip is a main substrate material in the semiconductor industry, is widely applied to industries such as integrated circuits, photovoltaic cells and the like, and is a basic material for supporting the current semiconductor industry and the social technical development. With the development of the solar energy industry, the requirements of solar cell manufacturers on the yield are increasing day by day. As a typical hard and brittle material, defects such as edge chipping and dirt can affect the performance and the service life of a photovoltaic product. At present, in the production process of silicon wafers, edge breakage and dirt detection are two mutually independent processes, the equipment volume is large, and the space utilization rate is low.

Based on this, there is a need for a silicon wafer inspection apparatus to solve the above-mentioned problems.

Disclosure of Invention

The invention aims to provide a silicon wafer detection device, which can be used for detecting edge breakage and dirt of a silicon wafer in the same process, so that the structural compactness of the device is improved, the space utilization rate is improved, and the detection efficiency is also improved.

In order to achieve the purpose, the invention adopts the following technical scheme:

a silicon wafer inspection apparatus comprising:

the conveying unit can convey a silicon wafer from a first detection position to a second detection position along a conveying direction, wherein two side edges of the silicon wafer along the conveying direction are a first edge and a second edge respectively;

the light-emitting unit comprises a first light source and a second light source, and the first light source and the second light source are respectively arranged on two sides of the conveying unit, which are perpendicular to the conveying direction;

the reflecting unit is arranged on one side, far away from the first light source, of the conveying unit and comprises two reflecting mirrors, and the two reflecting mirrors are arranged at intervals along the conveying direction and form a collecting gap;

the first acquisition unit is arranged on one side of the transmission unit, which is far away from the second light source, and can acquire the image of the first edge through one of the reflectors when the silicon wafer is positioned at the first detection position and acquire the image of the second edge through the other reflector when the silicon wafer is positioned at the second detection position;

the second acquisition unit is arranged on one side, far away from the transmission unit, of the reflection unit and can acquire the image of the silicon wafer between the first detection position and the second detection position through the acquisition gap.

As an optional technical solution of the silicon wafer detection apparatus, the conveying unit includes two conveying members arranged at intervals along the conveying direction, the conveying members can convey the silicon wafer along the conveying direction, a detection space is formed between the two conveying members, and the reflection unit is arranged over against the detection space; when the silicon chip is located at the first detection position, the first edge of the silicon chip is arranged in the detection space, and when the silicon chip is located at the second detection position, the second edge of the silicon chip is arranged in the detection space.

As an optional technical scheme of the silicon wafer detection device, one ends of the two reflectors far away from the transmission unit are obliquely arranged towards the direction close to each other, and the first acquisition unit and the reflection unit are arranged just opposite to each other.

As an optional technical scheme of the silicon wafer detection device, the first acquisition unit comprises two first acquisition pieces which are arranged along the conveying direction, and the two first acquisition pieces and the two reflectors are arranged in a one-to-one opposite mode.

As an optional technical scheme of the silicon wafer detection device, the first acquisition unit comprises a first acquisition part, the first acquisition part is an area-array camera, the first acquisition part is arranged opposite to the reflection unit, and the first acquisition part can simultaneously acquire images of the first edge and the second edge through two reflectors.

As an optional technical solution of the silicon wafer detection device, the first light source is a surface light source, a light transmission channel is arranged on the first light source, the first light source is arranged between the first collecting unit and the transmission unit, and the first collecting unit can collect images of the first edge and the second edge through the light transmission channel of the first light source.

As an optional technical solution of the silicon wafer detection apparatus, two first light sources are provided, the two first light sources are arranged at intervals along the conveying direction, light paths of the two first light sources are arranged obliquely to the conveying direction, the two first light sources respectively and correspondingly irradiate the first edge of the silicon wafer at the first detection position and the second edge of the silicon wafer at the second detection position, and the first collection unit is disposed between the two first light sources.

As an optional technical scheme of the silicon wafer detection device, the second acquisition unit comprises a second acquisition part, the second acquisition part is a linear array camera, the second light source is arranged between the reflection unit and the second acquisition part and provided with a light transmission gap, the light transmission gap is opposite to the acquisition gap, and the second acquisition part can sequentially pass through the light transmission gap and the acquisition gap to acquire images of the silicon wafer.

As an optional technical solution of the silicon wafer detection apparatus, the silicon wafer detection apparatus further includes a feeding unit, and the feeding unit can pick up the silicon wafer and supply the silicon wafer to the conveying unit.

As an optional technical scheme of the silicon wafer detection device, the reflection unit further comprises an adjusting frame, each of the reflection mirrors is arranged on one of the adjusting frames, and the adjusting frames can adjust the angle of the reflection mirror.

The invention has the beneficial effects that: the silicon wafer detection device comprises a transmission unit, a light-emitting unit, a reflecting unit, a first collecting unit and a second collecting unit, wherein the first collecting unit and the reflecting unit are used for edge breakage detection of the silicon wafer, and a first light source can illuminate a first edge and a second edge in the edge breakage detection process. The second acquisition unit sets up in the one side that the transfer unit was kept away from to the reflection unit, can detect the image that the clearance was gathered to the collection and is in the silicon chip between first detection position and the second detection position through detecting, realizes the dirty detection to the silicon chip, and the second light source can illuminate the terminal surface that the silicon chip faced the second acquisition unit at dirty in-process that detects. The silicon wafer detection device provided by the invention can complete edge breakage detection and contamination detection of the silicon wafer in the same process, the structure compactness of the detection device is improved, the space utilization rate is improved, edge breakage detection of a first edge of the silicon wafer can be carried out at a first detection position, edge breakage detection of a second edge of the silicon wafer can be carried out at a second detection position, contamination detection can be carried out during the transmission process of the silicon wafer between the first detection position and the second detection position, and the detection efficiency is also improved.

Drawings

Fig. 1 is a schematic structural diagram of a silicon wafer detection apparatus according to an embodiment of the present invention;

FIG. 2 is a front view of a silicon wafer inspection apparatus according to an embodiment of the present invention;

fig. 3 is a schematic structural diagram of a silicon wafer detection apparatus according to a second embodiment of the present invention;

fig. 4 is a front view of a silicon wafer inspection apparatus according to a second embodiment of the present invention.

In the figure:

10. a silicon wafer;

1. a first light source; 2. a second light source; 3. a first collecting member; 4. a second collecting member;

5. a reflection unit; 51. a mirror; 511. collecting gaps; 52. an adjusting bracket; 53. adjusting a knob; 6. a conveying member; 61. and detecting the space.

Detailed Description

In order to make the technical problems solved, technical solutions adopted and technical effects achieved by the present invention clearer, the technical solutions of the embodiments of the present invention will be described in further detail below with reference to the accompanying drawings, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.

In the description of the present invention, unless expressly stated or limited otherwise, the terms "connected," "connected," and "fixed" are to be construed broadly, e.g., as meaning permanently connected, removably connected, or integral to one another; can be mechanically or electrically connected; either directly or indirectly through intervening media, either internally or in any other relationship. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.

In the present invention, unless otherwise expressly stated or limited, "above" or "below" a first feature means that the first and second features are in direct contact, or that the first and second features are not in direct contact but are in contact with each other via another feature therebetween. Also, the first feature being "on," "above" and "over" the second feature includes the first feature being directly on and obliquely above the second feature, or merely indicating that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature includes the first feature being directly under and obliquely below the second feature, or simply meaning that the first feature is at a lesser elevation than the second feature.

The technical scheme of the invention is further explained by the specific implementation mode in combination with the attached drawings.

Example one

The embodiment provides a silicon wafer detection device. Specifically, as shown in fig. 1 and 2, the silicon wafer inspection apparatus includes: the device comprises a transmission unit, a light-emitting unit, a reflection unit 5, a first acquisition unit and a second acquisition unit. The conveying unit can convey the silicon wafer 10 from the first detection position to the second detection position along the conveying direction, and the two side edges of the silicon wafer 10 along the conveying direction are a first edge and a second edge respectively; the light-emitting unit comprises a first light source 1 and a second light source 2, and the first light source 1 and the second light source 2 are respectively arranged on two sides of the conveying unit, which are vertical to the conveying direction; the reflecting unit 5 is arranged on one side of the transmitting unit far away from the first light source 1, the reflecting unit 5 comprises two reflecting mirrors 51, and the two reflecting mirrors 51 are arranged at intervals along the transmitting direction and form a collecting gap 511; the first acquisition unit is arranged on one side of the transmission unit, which is far away from the second light source 2, and can acquire an image of a first edge through one of the reflectors 51 when the silicon wafer 10 is positioned at a first detection position, and can acquire an image of a second edge through the other reflector 51 when the silicon wafer 10 is positioned at a second detection position; the second collecting unit is arranged on one side of the reflecting unit 5 far away from the transmission unit, and can collect the image of the silicon wafer 10 between the first detection position and the second detection position through the collecting gap 511.

The silicon wafer detection device provided by the embodiment comprises a transmission unit, a light emitting unit, a reflection unit 5, a first acquisition unit and a second acquisition unit, wherein the first acquisition unit and the reflection unit 5 are used for edge breakage detection of the silicon wafer 10, and the first light source 1 can illuminate a first edge and a second edge in the process of edge breakage detection. The second collection unit is arranged on one side of the reflection unit 5 far away from the transmission unit, and can collect the image of the silicon wafer 10 between the first detection position and the second detection position through the detection collection gap 511, so that the contamination detection of the silicon wafer 10 is realized, and the second light source 2 can illuminate the end face of the silicon wafer 10 facing the second collection unit in the contamination detection process. The silicon wafer detection device provided by the embodiment can complete edge breakage detection and contamination detection of the silicon wafer 10 in the same process, the compact structure degree of the silicon wafer detection device is improved, the space utilization rate is improved, edge breakage detection of a first edge can be performed at a first detection position of the silicon wafer 10, edge breakage detection of a second edge can be performed at a second detection position of the silicon wafer 10, contamination detection can be performed in the conveying process of the silicon wafer 10 between the first detection position and the second detection position, and the detection efficiency is also improved.

Specifically, the transfer direction is set horizontally, and the silicon wafer 10 may be transferred from left to right or from right to left in terms of the directions in fig. 1 and 2. The first light source 1 and the first collecting unit are arranged above the conveying unit, and the second light source 2, the reflecting unit 5 and the second collecting unit are arranged below the conveying unit. In this embodiment, the silicon wafer 10 is transferred from left to right, the left silicon wafer in fig. 1 is at a first detection position, the right silicon wafer 10 is at a second detection position, the right edge of the silicon wafer 10 is a first edge, and the left edge of the silicon wafer 10 is a second edge. In other embodiments, the conveying direction may also be vertically arranged, and is not limited herein.

Specifically, as shown in fig. 1 and 2, the transfer unit includes two transfer members 6 disposed at intervals in the transfer direction, the transfer members 6 being capable of transferring the silicon wafer 10 in the transfer direction, a detection space 61 being formed between the two transfer members 6, and the reflection unit 5 facing the detection space 61. And a first edge of the silicon wafer 10 is positioned in the sensing space 61 when the silicon wafer 10 is at the first sensing position, and a second edge of the silicon wafer 10 is positioned in the sensing space 61 when the silicon wafer 10 is at the second sensing position. Set up detection space 61, avoid conveying piece 6 to shelter from silicon chip 10, be convenient for first acquisition unit and second acquisition unit gather the image, also be convenient for first light source 1 and second light source 2 illuminate silicon chip 10.

Specifically, the left conveyor 6 is set as the first conveyor, and the right conveyor 6 is set as the second conveyor. When the silicon wafer 10 is located on the first conveying member, the first edge of the silicon wafer 10 protrudes out of the first conveying member and is located in the detection space 61, and at this time, the silicon wafer is located at the first detection position. When the silicon wafer 10 is located on the second conveying member, the second edge of the silicon wafer 10 protrudes from the second conveying member and is located in the detection space 61, and at this time, the silicon wafer is located at the second detection position. In this embodiment, the silicon wafer 10 is disposed on a side of the conveyor 6 facing the first light source 10.

In this embodiment, the conveying member 6 is a conveyor belt, which is simple in structure and low in cost and extends in the conveying direction. The structure of the conveyor belt is a common structure in the prior art and is not described in detail herein. In other embodiments, the transfer unit may also be a robot, and is not limited herein.

Specifically, one ends of the two reflectors 51 far from the transmission unit are both obliquely arranged towards the direction close to each other, and the first collecting unit is arranged opposite to the reflection unit 5. That is, the two mirrors 51 are V-shaped, and the openings of the V-shaped are disposed toward the transfer unit. The structural arrangement enables the two imaging light paths between the first acquisition unit and the two reflectors 51 to be intersected or parallel, and is beneficial to reducing the horizontal size of the first acquisition unit. Preferably, the imaging optical paths between the two mirrors 51 and the first acquisition unit are parallel to each other and are in the vertical direction, i.e. perpendicular to the transport direction.

Specifically, the mirror 51 on the right side in fig. 1 is set as a first mirror, and the mirror 51 on the left side is set as a second mirror. The first collecting unit can collect the first edge of the silicon chip 10 at the first detection position through the first reflector, the first collecting unit can collect the second edge of the silicon chip 10 at the second detection position through the second reflector, and the angle of the two reflectors 51 can meet the requirements without specific limitation.

In this embodiment, the first collecting unit includes two first collecting members 3 arranged along the conveying direction, and the two first collecting members 3 are arranged opposite to the two reflectors 51 one by one, that is, one of the first collecting members 3 collects the image of the first edge through one of the reflectors 51, and the other first collecting member 3 collects the image of the second edge through the other reflector 51. In fig. 1, the first collecting member 3 on the right side can collect the first edge of the silicon wafer 10 at the first detection position by the first reflecting mirror, and the first collecting member 3 on the left side can collect the second edge of the silicon wafer 10 at the second detection position by the second reflecting mirror. Specifically, the first collecting element 3 is a line-scan camera or an area-scan camera, and the lens of the first collecting element 3 is disposed at the bottom of the first collecting element 3 and shoots vertically downward, so that the imaging optical path between the first collecting element 3 and the corresponding reflector 51 is along the vertical direction. Preferably, the first acquisition member 3 is a line camera.

In other embodiments, the first capturing unit may further include only one first capturing element 3, the first capturing element 3 is an area-array camera, the first capturing element 3 and the reflecting unit 5 are disposed opposite to each other, and the first capturing element 3 can capture images of the two reflectors 51, that is, the first capturing element 3 can capture images of the first edge and the second edge through the two reflectors 51. The images in the two reflectors 51 can be acquired simultaneously by adopting one first acquisition part 3, so that the number of the first acquisition parts 3 is reduced, and the structure of the silicon wafer detection device is simplified. At this time, the lens of the first collecting member 3 is disposed at the bottom, and collects the images of the first edge and the second edge within the reflecting mirror 51 vertically downward.

Preferably, the first light source 1 is configured as a surface light source, a light transmission channel is disposed on the first light source 1, the first light source 1 is disposed between the first collecting unit and the transmitting unit, and the first collecting unit can collect images of the first edge and the second edge through the light transmission channel of the first light source 1. The light-emitting area of the first light source 1 is large, and the first edge of the silicon wafer 10 located at the first detection position and the second edge of the silicon wafer 10 located at the second detection position can be illuminated by using one first light source 1, so that the structural arrangement of the silicon wafer detection device is simplified, and the production and the processing are convenient. Specifically, the first light source 1 is configured as an annular light source or a coaxial light source, and the structures of the two light sources are both in the prior art. In this embodiment, a coaxial light source is provided.

Specifically, the second collecting unit comprises a second collecting piece 4, the second collecting piece 4 is a linear array camera, the second light source 2 is arranged in front of the reflecting unit 5 and the second collecting piece 4 and is provided with a light-transmitting gap, the light-transmitting gap is opposite to the collecting gap 511, and the second collecting piece 4 can sequentially pass through the light-transmitting gap and the collecting gap 511 to collect images of the silicon wafer 10. Set up second light source 2 between second collection 4 and reflection unit 5, be convenient for shorten silicon chip detection device's horizontal dimension, reduced the space and taken up, guaranteed moreover that second collection 4 can scan silicon chip 10 towards the terminal surface of conveying 6 through the printing opacity gap, realize carrying out dirty detection under the prerequisite that does not influence the detection of collapsing the limit. Specifically, the second light source 2 is provided as a homogenizing light source, and the structure of the homogenizing light source is prior art.

Preferably, the reflection unit 5 further includes adjustment brackets 52, each of the reflection mirrors 51 is provided on one of the adjustment brackets 52, and the adjustment bracket 52 is capable of adjusting an angle of the reflection mirror 51. This kind of structural arrangement, the angle of being convenient for adjust speculum 51 when first detection position and second detection position change position, also be convenient for according to the detection position adjustment speculum 51 angle after the adjustment, improved the practicality.

Specifically, the adjusting bracket 52 comprises a bracket body and a connecting plate, the reflector 51 is arranged on the connecting plate, the connecting plate is rotatably arranged on the bracket body, an adjusting knob 53 is further arranged on the adjusting bracket 52, and when the connecting plate is rotated to a proper position, the adjusting knob 53 can fix the relative position between the bracket body and the connecting plate. The connecting plate rotates relative to the frame body along a horizontal axis of rotation, which is perpendicular to the conveying direction.

Further, the silicon wafer inspection apparatus further includes a loading unit capable of picking up the silicon wafer 10 and supplying the silicon wafer 10 to the transfer unit. The feeding unit further comprises a manipulator, wherein an adsorption piece is arranged on the manipulator and can adsorb the silicon wafer 10. In particular, the suction member is a suction cup. The manipulator can drive the sucking disc to move to the magazine department of depositing silicon chip 10, drives the sucking disc again and removes to the left side of conveying unit, places silicon chip 10 at the left end of first conveying piece.

Example two

The present embodiment provides a silicon wafer detecting device, the main structure of which is the same as that of the first embodiment, and only the first light source is different, and other same structures are not described in detail in this embodiment.

Specifically, as shown in fig. 3 and 4, two first light sources 1 are provided, the two first light sources 1 are arranged at intervals along the conveying direction, the light paths of the two first light sources 1 are arranged obliquely to the conveying direction, the two first light sources 1 respectively irradiate a first edge of a silicon wafer 10 at a first detection position and a second edge of the silicon wafer 10 at a second detection position, and a first collecting unit is disposed between the two first light sources 1, that is, the first collecting unit can collect images in a reflector 51 through the interval between the two first light sources 1. It can be understood that the first light source 1 may not be disposed between the first collecting unit and the transmitting unit, which is beneficial to reducing the size of the detecting device along the vertical direction, improving the compactness of the structure and the practicability.

Specifically, the two first light sources 1 may be linear light sources or surface light sources. In this embodiment, the first light sources 1 are linear light sources, the light beams of the two first light sources 1 can intersect to form a V-shape, and the opening of the V-shape is disposed opposite to the transmitting unit. At this time, the first light source 1 on the right side can illuminate the first edge of the silicon wafer 10 at the first inspection position, and the first light source 1 on the left side can illuminate the second edge of the silicon wafer 10 at the second inspection position.

It should be understood that the above-described embodiments of the present invention are merely examples for clearly illustrating the present invention, and are not intended to limit the embodiments of the present invention. Other variations and modifications will be apparent to persons skilled in the art in light of the above description. And are neither required nor exhaustive of all embodiments. Any modification, equivalent replacement, and improvement made within the spirit and principle of the present invention should be included in the protection scope of the claims of the present invention.