阅读说明：本技术 光罩及光罩的制备方法 (Photomask and preparation method thereof ) 是由 汪美里 于 2021-08-09 设计创作，主要内容包括：本申请公开了光罩及光罩的制备方法,用以避免对光罩进行破坏性制程失败导致光罩报废无法使用,节约成本。本申请实施例提供的一种光罩,光罩包括：第一基板,包括：相对的第一表面和第二表面,连接第一表面和第二表面的第一侧面,以及在第一侧面开口的容置空间；第二基板,置于容置空间内,第二基板内形成有像素场。(The application discloses a photomask and a preparation method of the photomask, which are used for avoiding the photomask from being scrapped and being unusable due to the failure of destructive processing on the photomask and saving the cost. An embodiment of the present application provides a photomask, which includes: a first substrate comprising: the first surface and the second surface are opposite, the first side surface connecting the first surface and the second surface is connected, and the accommodating space is opened on the first side surface; the second substrate is arranged in the accommodating space, and a pixel field is formed in the second substrate.)

1. A photomask, comprising:

a first substrate comprising: the first surface and the second surface are opposite, the first side surface connecting the first surface and the second surface is provided, and the accommodating space is opened on the first side surface;

and the second substrate is arranged in the accommodating space, and a pixel field is formed in the second substrate.

2. The mask according to claim 1, wherein the accommodating space comprises: a third surface and a fourth surface which are oppositely arranged and are parallel to the first surface;

the second substrate has a fifth surface adjacent to the third surface and a sixth surface adjacent to the fourth surface;

the third surface has a first alignment structure and the fifth surface has a second alignment structure; and/or the fourth surface has a first alignment structure and the sixth surface has a second alignment structure;

the first alignment structure is aligned with the second alignment structure, and the shape of the first alignment structure is matched with that of the second alignment structure.

3. The mask of claim 2, wherein one of the first and second alignment structures comprises a plurality of grooves extending in a first direction and aligned in a second direction; the other of the first and second alignment structures includes a plurality of protrusions extending in the first direction and arranged in the second direction;

wherein the second direction is parallel to the first side surface having the opening and the first surface, and the second direction crosses the first direction.

4. The mask according to any of claims 1 to 3, wherein in a third direction, a ratio of a thickness of the accommodating space to a thickness of the first substrate is 1: 3;

wherein the third direction is perpendicular to the first surface.

5. The optical cover according to claim 4, wherein in the third direction, the thickness of the second substrate is equal to the thickness of the accommodating space.

6. The mask according to claim 4, wherein a ratio of a width of the accommodating space in a first direction to a width of the first substrate in the first direction is greater than 80%;

the ratio of the width of the accommodating space in the second direction to the width of the first substrate in the second direction is greater than 80%.

7. The optical cover according to claim 1, further comprising:

a light shielding layer located at one side of the first surface or the second surface of the first substrate and including a light shielding pattern.

8. A method for preparing a photomask, the method comprising:

preparing a first substrate with an accommodating space; wherein the first substrate includes: the accommodating space comprises a first surface, a second surface and a first side surface, wherein the first surface and the second surface are opposite, the first side surface is connected with the first surface and the second surface, and the accommodating space is provided with an opening on the first side surface;

preparing a second substrate and forming a pixel field in the second substrate;

and placing the second substrate in the accommodating space.

9. The method of claim 8, further comprising, while preparing the accommodating space:

forming a first alignment structure on the third surface and/or the fourth surface of the accommodating space;

the preparing the second substrate specifically includes:

preparing a second substrate having a second alignment structure on the fifth surface and/or the sixth surface; wherein the shape of the second alignment structure matches the shape of the first alignment structure.

10. The method of claim 9, wherein one of the first and second alignment structures includes a plurality of grooves extending in a first direction and aligned in a second direction, and the other of the first and second alignment structures includes a plurality of protrusions extending in the first direction and aligned in the second direction; the second direction is parallel to the first side face with the accommodating space opening and the first surface, and the second direction is crossed with the first direction;

placing the second substrate in the accommodating space, specifically comprising:

aligning the protrusion and the groove and pushing the second substrate to the accommodating space along the first direction.

11. The method according to any one of claims 8 to 10, wherein after the forming the first substrate having the accommodating space, the method further comprises:

and forming a light shielding layer on one side of the first surface or one side of the second surface of the first substrate, and forming a pattern of the light shielding layer on the light shielding layer by adopting a patterning process.

Technical Field

The present disclosure relates to mask technologies, and particularly to a mask and a method for manufacturing the mask.

Background

In the prior art, pixels (pixels) are driven into a mask substrate by using a Critical Dimension Control (CDC) technique to change the transmittance of light through the mask substrate, thereby improving the Critical Dimension and the uniformity of the Critical Dimension of the mask. However, the CDC technique is equivalent to performing a destructive process on the mask substrate, and the destructive process is irreversible, and the failure of the process of driving pixels results in the whole mask being unusable and scrapped, which is not favorable for reducing the mask manufacturing cost. Furthermore, the number of times of driving pixels on the mask substrate is limited, and the pixels cannot be driven infinitely.

Disclosure of Invention

The embodiment of the application provides a photomask and a preparation method of the photomask, which are used for avoiding the situation that the photomask is scrapped and cannot be used due to the fact that destructive processing is failed on the photomask, and the cost is saved.

An embodiment of the present application provides a photomask, which includes:

a first substrate comprising: the first surface and the second surface are opposite, the first side surface connecting the first surface and the second surface is connected, and the accommodating space is opened on the first side surface;

the second substrate is arranged in the accommodating space, and a pixel field is formed in the second substrate.

In some embodiments, the accommodating space includes: a third surface and a fourth surface which are oppositely arranged and are parallel to the first surface;

the second substrate is provided with a fifth surface adjacent to the third surface and a sixth surface adjacent to the fourth surface;

the third surface is provided with a first alignment structure, and the fifth surface is provided with a second alignment structure; and/or the fourth surface has a first alignment structure and the sixth surface has a second alignment structure;

the first alignment structure is aligned with the second alignment structure, and the shape of the first alignment structure is matched with that of the second alignment structure.

In some embodiments, one of the first and second alignment structures includes a plurality of grooves extending in a first direction and aligned in a second direction, and the other of the first and second alignment structures includes a plurality of protrusions extending in the first direction and aligned in the second direction;

the second direction is parallel to the first side face with the containing space opening, and the second direction is crossed with the first direction.

In some embodiments, in the third direction, a ratio of a thickness of the accommodating space to a thickness of the first substrate is 1: 3;

wherein the third direction is perpendicular to the first surface.

In some embodiments, in the third direction, the thickness of the second substrate is equal to the thickness of the accommodating space.

In some embodiments, a ratio of a width of the accommodating space in the first direction to a width of the first substrate in the first direction is greater than 80%;

the ratio of the width of the accommodating space in the second direction to the width of the first substrate in the second direction is greater than 80%.

In some embodiments, the mask further comprises:

the shading layer is positioned on one side of the first surface of the first substrate and comprises shading patterns.

The preparation method of the photomask provided by the embodiment of the disclosure comprises the following steps:

preparing a first substrate with an accommodating space; wherein the first substrate includes: the first surface and the second surface are opposite, the first side surface is connected with the first surface and the second surface, and the accommodating space is opened at the first side surface;

preparing a second substrate and forming a pixel field in the second substrate;

the second substrate is placed in the accommodating space.

In some embodiments, while preparing the accommodating space, the method further includes:

forming a first alignment structure on the third surface and/or the fourth surface of the accommodating space;

the preparing of the second substrate specifically includes:

preparing a second substrate having a second alignment structure on the fifth surface and/or the sixth surface; wherein the shape of the second alignment structure matches the shape of the first alignment structure.

In some embodiments, one of the first and second alignment structures includes a plurality of grooves extending in a first direction and aligned in a second direction, and the other of the first and second alignment structures includes a plurality of protrusions extending in the first direction and aligned in the second direction; the second direction is parallel to the first side face with the containing space opening and the first surface, and the second direction is crossed with the first direction;

placing the second substrate in the accommodating space, specifically comprising:

aligning the protrusion and the groove and pushing the second substrate to the accommodating space along the first direction.

In some embodiments, after forming the first substrate having the accommodating space, the method further includes:

and forming a light shielding layer on the first surface or the second surface of the first substrate, and forming a pattern of the light shielding layer on the light shielding layer by adopting a patterning process.

According to the photomask and the preparation method of the photomask, the first substrate is provided with the accommodating space for accommodating the second substrate, and the second substrate is arranged in the accommodating space and can be taken out of the accommodating space, so that the first substrate can be continuously used even if the second substrate cannot be used due to the failure of the process of forming the pixel field, and therefore the second substrate can be replaced without scrapping the first substrate, and the manufacturing cost of the photomask can be saved. In addition, the photomask provided by the embodiment of the application can replace the second substrate according to the requirement, so that the pixel field of the second substrate meets the requirement of exposure critical dimension.

Drawings

In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.

FIG. 1 is a schematic diagram of a mask according to an embodiment of the present disclosure;

fig. 2 is a top view of a first substrate according to an embodiment of the present disclosure;

fig. 3 is a cross-sectional view of a first substrate according to an embodiment of the present disclosure;

FIG. 4 is a cross-sectional view of AA' of FIG. 2 according to an embodiment of the present application;

FIG. 5 is a schematic view of another mask structure according to an embodiment of the present disclosure;

FIG. 6 is a cross-sectional view of another first substrate provided in accordance with an embodiment of the present disclosure;

FIG. 7 is a cross-sectional view of a second substrate according to an embodiment of the present disclosure;

FIG. 8 is a schematic view of another embodiment of a mask;

FIG. 9 is a cross-sectional view of a first substrate according to an embodiment of the present disclosure;

FIG. 10 is a cross-sectional view of another second substrate provided in accordance with an embodiment of the present application;

FIG. 11 is a schematic view of another exemplary embodiment of a mask;

FIG. 12 is a cross-sectional view of a first substrate according to an embodiment of the present disclosure;

FIG. 13 is a cross-sectional view of a second substrate according to an embodiment of the present disclosure;

FIG. 14 is a schematic view of another exemplary embodiment of a mask;

FIG. 15 is a cross-sectional view of yet another first substrate provided in accordance with an embodiment of the present disclosure;

FIG. 16 is a cross-sectional view of a second substrate according to an embodiment of the present disclosure;

FIG. 17 is a schematic view of another embodiment of a mask;

FIG. 18 is a cross-sectional view of yet another first substrate provided in accordance with an embodiment of the present disclosure;

FIG. 19 is a cross-sectional view of a second substrate according to an embodiment of the present disclosure;

FIG. 20 is a schematic view of another exemplary embodiment of a mask;

FIG. 21 is a cross-sectional view of yet another first substrate provided in accordance with an embodiment of the present disclosure;

FIG. 22 is a cross-sectional view of a second substrate according to an embodiment of the present disclosure;

FIG. 23 is a schematic view of another exemplary embodiment of a mask;

FIG. 24 is a schematic view of another exemplary embodiment of a mask;

FIG. 25 is a schematic view of another exemplary embodiment of a mask;

fig. 26 is a flowchart illustrating a method for fabricating a mask according to an embodiment of the present disclosure.

Detailed Description

In order to make the objects, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions of the embodiments of the present application will be clearly and completely described below with reference to the drawings of the embodiments of the present application. It should be apparent that the described embodiments are only some of the embodiments of the present application, and not all embodiments. And the embodiments and features of the embodiments in the present application may be combined with each other without conflict. All other embodiments, which can be derived by a person skilled in the art from the described embodiments of the application without any inventive step, are within the scope of protection of the application.

Unless defined otherwise, technical or scientific terms used herein shall have the ordinary meaning as understood by one of ordinary skill in the art to which this application belongs. As used in this application, the terms "first," "second," and the like do not denote any order, quantity, or importance, but rather are used to distinguish one element from another. The word "comprising" or "comprises", and the like, means that the element or item listed before the word covers the element or item listed after the word and its equivalents, but does not exclude other elements or items. The terms "connected" or "coupled" and the like are not restricted to physical or mechanical connections, but may include electrical connections, whether direct or indirect.

It should be noted that the sizes and shapes of the figures in the drawings are not to be considered true scale, but are merely intended to schematically illustrate the present disclosure. And the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout.

An embodiment of the present application provides a mask, as shown in fig. 1, fig. 2, fig. 3, and fig. 4, the mask includes:

a first substrate 1 comprising: a first surface 3 and a second surface 4 which are opposite, a first side surface 5 connecting the first surface 3 and the second surface 4, and a containing space 6 which is opened at the first side surface 5;

the second substrate 2 is disposed in the accommodating space 6, and a pixel field 14 is formed in the second substrate 2.

In addition, in the photomask provided in the embodiment of the present application, the placing of the second substrate in the accommodating space means: the second substrate is not fixedly connected with the first substrate in the accommodating space, so that the second substrate can be taken out of the accommodating space.

In particular, the mask provided by the embodiment of the present disclosure may be applied to an exposure process to transfer the pattern of the mask to an exposed film.

In particular implementation, as shown in FIG. 1, the pixel field 14 includes a plurality of pixels 15.

In a specific implementation, a plurality of pixels may be driven into the second substrate by using a Critical Dimension Control (CDC) technique to form a pixel field. The light transmittance of the second substrate is changed in the region where the pixel is driven. When the photomask is used for exposure, light incident to the second substrate is scattered at the pixel, and thus, part of the scattered light cannot reach the film layer to be exposed, so that the intensity of the light reaching the film layer to be exposed can be changed, and the line width of a pattern formed after the film layer to be exposed is exposed can be changed.

According to the photomask provided by the embodiment of the application, the first substrate is provided with the accommodating space for accommodating the second substrate, and the second substrate is arranged in the accommodating space and can be taken out of the accommodating space, so that the first substrate can be continuously used even if the second substrate cannot be used due to the failure of the process of forming the pixel field by the second substrate, and therefore the second substrate can be replaced without scrapping the first substrate, and the manufacturing cost of the photomask can be saved. In addition, the photomask provided by the embodiment of the application can replace the second substrate according to the requirement, so that the pixel field of the second substrate meets the requirement of the photomask on exposure critical dimension.

It should be noted that fig. 2 is a top view of the first substrate, fig. 3 is a cross-sectional view of the first substrate in a plane with the first side surface of the accommodating space opening, and fig. 4 is a cross-sectional view along AA' in fig. 2.

It should be noted that fig. 1, 3, and 4 illustrate an example in which the first substrate includes an accommodating space. In specific implementation, a plurality of accommodating spaces with openings on the first side surface can be arranged according to requirements. The plurality of accommodating spaces can be arranged in a stacked manner along a direction perpendicular to the first surface, and can also be sequentially arranged along the rows and the direction of the first surface.

In some embodiments, as shown in fig. 1, 3 and 4, the accommodating space 6 has: a third surface 7 and a fourth surface 8, which are oppositely arranged and are both parallel to the first surface 3, and a second side 9 connecting the third surface 7 and the fourth surface 8.

In some embodiments, the second substrate includes a fifth surface adjacent to the third surface and a sixth surface adjacent to the fourth surface.

In some embodiments, as shown in fig. 5-22, the third surface 7 has a first alignment structure 12, and the fifth surface 10 has a second alignment structure 13; and/or the fourth surface 8 has a first alignment structure 12 and the sixth surface 11 has a second alignment structure 13;

in the accommodating space 6, the first alignment structure 12 is aligned with the second alignment structure 13, and the shape of the first alignment structure 12 matches the shape of the second alignment structure 13.

In fig. 5, 6, 7, 14, 15, and 16, the third surface 7 has a first alignment structure 12, and the fifth surface 10 has a second alignment structure 13. In fig. 8, 9, 10, 17, 18, 19, the fourth surface 8 has the first alignment structure 12, and the sixth surface 11 has the second alignment structure 13. In fig. 11, 12, 13, 20, 21, and 22, the third surface 7 has the first alignment structure 12, the fifth surface 10 has the second alignment structure 13, the fourth surface 8 has the first alignment structure 12, and the sixth surface 11 has the second alignment structure 13.

It should be noted that, the shape matching between the first alignment structure and the second alignment structure means: when the first alignment structure is aligned with the second alignment structure, a space surrounded by the first alignment structure may accommodate the second alignment structure, or a space surrounded by the second alignment structure may accommodate the first alignment structure. In some embodiments, after the first alignment structure and the second alignment structure are aligned, the first alignment structure and the second alignment structure are spliced into a complete graph.

According to the photomask provided by the embodiment of the application, when the second substrate is placed in the accommodating space, the first alignment structure and the second alignment structure which are matched in shape are aligned, so that the second substrate can be prevented from moving in the accommodating space, and the exposure yield can be improved.

In some embodiments, as shown in fig. 5-22, one of the first and second alignment structures 12 and 13 includes a plurality of grooves 16 extending in the first direction Y and arranged in the second direction X, and the other of the first and second alignment structures 12 and 13 includes a plurality of protrusions 17 extending in the first direction Y and arranged in the second direction X;

as shown in fig. 2, the second direction X is parallel to the first side surface 5 having the opening of the accommodating space 6, and the second direction X intersects with the first direction Y.

In some embodiments, the second direction X is perpendicular to the first direction Y. In fig. 5 to 22, the first direction Y is a direction perpendicular to a plane in which the second direction X and the third direction Z are located. Wherein the third direction Z is perpendicular to the first surface 3 of the first substrate 1.

It should be noted that fig. 5 to 13 illustrate the first alignment structure 12 including a plurality of grooves 16 and the second alignment structure 13 including a plurality of protrusions 17, and fig. 14 to 22 illustrate the first alignment structure 12 including a plurality of protrusions 17 and the second alignment structure 13 including a plurality of grooves 16.

The photomask provided by the embodiment of the application is characterized in that a plurality of grooves extending along the first direction and arranged along the second direction are formed in the surface, adjacent to the second substrate, of the accommodating space, a plurality of bulges extending along the first direction and arranged along the second direction are formed in the second substrate, or a plurality of bulges extending along the first direction and arranged along the second direction are formed in the accommodating space, and a plurality of grooves extending along the first direction and arranged along the second direction are formed in the second substrate, so that a plurality of matched tracks are formed in the accommodating space and the second substrate. Therefore, after the first alignment structure and the second alignment structure are aligned, the second substrate is placed in the accommodating space in a moving mode along the extending direction of the protrusions and the grooves, the protrusions and the grooves are aligned and matched, the second substrate can be prevented from moving in the accommodating space, and exposure yield of exposure by using the photomask can be improved.

In some embodiments, as shown in fig. 5 to 22, the cross-section of the protrusion 17 and the groove 16 parallel to the second direction X is arc-shaped.

Of course, in some embodiments, the shape of the cross section of the protrusion 17 and the groove 16 parallel to the second direction X may also be triangular or other shapes.

In some embodiments, the plurality of protrusions are equally spaced and the plurality of recesses are equally spaced.

In some embodiments, when the first alignment structure includes a protrusion, a length of the protrusion in the first direction may be equal to a depth of the receiving space in the first direction, for example; the second alignment structure may include a groove having a length in the first direction equal to a width of the second substrate in the first direction, for example.

In some embodiments, when the first alignment structure includes a groove, a length of the groove in the first direction may be equal to a depth of the accommodating space in the first direction, for example; the length of the protrusion in the first direction included in the second alignment structure may be equal to the width of the second substrate in the first direction, for example.

In specific implementation, as shown in fig. 2, the width of the first substrate 1 in the second direction X is h1, and the width of the first substrate 1 in the first direction Y is h 2. The width of the accommodating space 6 in the second direction X is h3, and the width of the accommodating space 6 in the first direction Y is h 4.

In some embodiments, a ratio of a width h3 of the accommodating space in the second direction X to a width h1 of the first substrate in the second direction X is greater than 80%;

the ratio of the width h4 of the accommodating space in the first direction Y to the width h2 of the first substrate in the first direction Y is more than 80%.

Therefore, the first substrate can be prevented from being easily damaged due to the fact that the accommodating space formed in the first substrate is overlarge in size.

In a specific implementation, for example, the width h4 of the accommodating space in the first direction Y is 26 millimeters (mm), and the width h3 of the accommodating space in the second direction X is 33 mm. The width h1 of the first substrate in the second direction X may be 32mm, for example, and the width h2 of the first substrate in the first direction Y may be 41mm, for example.

In specific implementation, as shown in fig. 4, the total thickness of the first substrate 1 in the third direction Z is h5, and the thickness of the accommodating space 6 in the third direction Z is h 6.

It should be noted that, when the third surface and/or the fourth surface of the accommodating space have the first alignment structure, the thickness of the accommodating space in the third direction Z refers to the thickness of the area of the accommodating space in the third direction Z where the first alignment structure is not disposed.

In some embodiments, a ratio of a thickness h6 of the accommodating space in the third direction Z to a total thickness h5 of the first substrate in the third direction Z is 1: 3.

in some embodiments, in the third direction Z, a distance between the first surface of the first substrate and the third surface of the accommodating space is equal to a distance between the second surface of the first substrate and the fourth surface of the accommodating space, and the distance between the first surface of the first substrate and the third surface of the accommodating space is equal to the thickness h6 of the accommodating space.

It should be noted that, in fig. 1, fig. 5, fig. 8, fig. 11, fig. 14, fig. 17, and fig. 20, the thickness of the second substrate in the third direction Z is equal to the thickness of the accommodating space in the third direction Z, the width of the second substrate in the second direction X is equal to the width of the accommodating space in the second direction X, and the width of the second substrate in the first direction Y is equal to the width of the accommodating space in the first direction Y.

In some embodiments, the thickness of the second substrate in the third direction Z is less than or equal to the thickness h6 of the accommodating space in the third direction Z.

When the fifth surface and/or the sixth surface of the second substrate have the second alignment structure, the thickness of the second substrate in the third direction Z refers to the thickness of the second substrate in the third direction Z in a region where the second alignment structure is not disposed.

In some embodiments, in the third direction, the thickness of the second substrate is equal to the thickness of the accommodating space.

Of course, in the specific implementation, the thickness of the second substrate may be smaller than that of the accommodating space in consideration of process errors. For example, the difference between the thickness of the second substrate and the thickness of the accommodating space is less than 10% of the thickness of the accommodating space.

In some embodiments, the width of the second substrate in the second direction X is less than or equal to the width of the accommodating space in the second direction X; the width of the second substrate in the first direction Y is less than or equal to the width of the accommodating space in the first direction Y.

In a specific implementation, the width of the second substrate in the first direction Y may be greater than, equal to, or smaller than the width of the accommodating space in the first direction Y.

As shown in fig. 23, when the width of the second substrate 2 in the first direction Y may be greater than the width of the accommodating space 6 in the first direction Y, after the second substrate 2 is inserted into the accommodating space 6, a portion of the second substrate 2 is located outside the accommodating space 6, so as to facilitate the extraction of the second substrate 2 in the accommodating space 6.

In some embodiments, the width of the pixel in the first direction Y is 1 micron and the thickness of the pixel in the third direction Z is 3 microns.

In some embodiments, the mask further comprises:

the shading layer is positioned on one side of the first surface or the second surface of the first substrate and comprises shading patterns.

As shown in fig. 24 and 25, the light shielding layer 18 is located on the first surface 3 side of the first substrate 1.

In some embodiments, in fig. 24, the mask gold includes a light-shielding layer. In a specific implementation, the material of the light shielding layer includes, for example: chromium (Cr) or chromium oxide (CrO)_x)。

In some embodiments, in fig. 25, the light shielding layer includes: and a first light-shielding layer 20 and a second light-shielding layer 21 which are stacked. The first light shielding layer 20 is located on the side of the second light shielding layer 21 close to the first substrate 1.

In a specific implementation, the material of the first light shielding layer includes, for example: molybdenum silicon oxynitride (MoSiON), the material of the second light-shielding layer includes, for example: cr or CrO_x。

In some embodiments, as shown in fig. 24 and 25, the mask further comprises: a photoresist layer 19 on the side of the light-shielding pattern facing away from the first substrate.

In some embodiments, the first substrate and the second substrate are transparent substrates, and the material of the transparent substrates may be quartz or glass, for example.

Based on the same inventive concept, the embodiment of the present disclosure further provides a method for manufacturing a photomask, as shown in fig. 26, including:

s101, preparing a first substrate with an accommodating space; wherein the first substrate includes: the first surface and the second surface are opposite, the first side surface is connected with the first surface and the second surface, and the accommodating space is opened at the first side surface;

s102, preparing a second substrate and forming a pixel field in the second substrate;

s103, placing the second substrate in the accommodating space.

According to the method for comparing the photomask, the first substrate with the containing space is formed, the containing space can contain the second substrate, and the second substrate which forms the pixel field subsequently can be placed in the containing space and can also be taken out of the containing space. And the second substrate can be replaced according to the requirement, so that the pixel field of the second substrate meets the requirement of exposure critical dimension.

In some embodiments, forming the pixel field on the second substrate specifically includes:

and driving a plurality of pixels on the second substrate by using a CDC technology to form a pixel field.

For example, a pixel field is formed by driving a plurality of pixels into the second substrate using a CDC tool of a femtosecond laser.

In some embodiments, while forming the accommodating space, the method further includes:

forming a first alignment structure on the third surface and/or the fourth surface of the accommodating space;

the preparing of the second substrate specifically includes:

preparing a second substrate having a second alignment structure on the fifth surface and/or the sixth surface; wherein the shape of the second alignment structure matches the shape of the first alignment structure.

In some embodiments, one of the first and second alignment structures includes a plurality of grooves extending in a first direction and aligned in a second direction, and the other of the first and second alignment structures includes a plurality of protrusions extending in the first direction and aligned in the second direction; the first direction is parallel to the direction of the opening of the accommodating space pointing to the second side surface, and the second direction is crossed with the first direction;

placing the second substrate in the accommodating space, specifically comprising:

aligning the protrusion and the groove and pushing the second substrate to the accommodating space along the first direction.

It should be noted that specific arrangement of the protrusions and the grooves can be found in the related embodiments of the mask provided in the present application, and will not be described herein again.

In some embodiments, after forming the first substrate having the accommodating space, the method further includes:

and forming a light shielding layer on the first surface or the second surface of the first substrate, and forming a pattern of the light shielding layer by adopting a patterning process.

In an embodiment, the forming of the light shielding layer may be performed before the second substrate is placed in the accommodating space, or may be performed after the second substrate is placed in the accommodating space.

In some embodiments, forming a light-shielding layer on the first surface or the second surface of the first substrate, and forming a pattern of the light-shielding layer by using a patterning process specifically includes:

forming a light shielding layer on the first surface or the second surface of the first substrate;

forming a photoresist layer on one side of the shading layer, which is far away from the first substrate;

forming a photoresist pattern on the photoresist layer by adopting exposure and development processes;

and forming the pattern of the light shielding layer by adopting an etching process for the light shielding layer.

In summary, according to the photomask and the method for manufacturing the photomask provided by the embodiment of the application, the first substrate has the accommodating space for accommodating the second substrate, and the second substrate is placed in the accommodating space and can be taken out of the accommodating space, so that even if the second substrate cannot be used due to the failure of the process of forming the pixel field by the second substrate, the first substrate can still be continuously used, and therefore, the second substrate can be replaced without scrapping the first substrate, and the manufacturing cost of the photomask can be saved. In addition, the photomask provided by the embodiment of the application can replace the second substrate according to the requirement, so that the pixel field of the second substrate meets the requirement of exposure critical dimension.

It will be apparent to those skilled in the art that various changes and modifications may be made in the present application without departing from the spirit and scope of the application. Thus, if such modifications and variations of the present application fall within the scope of the claims of the present application and their equivalents, the present application is intended to include such modifications and variations as well.