阅读说明：本技术 一种功率模块的制造方法 (Manufacturing method of power module ) 是由 卓延厚 郎岳 于 2021-06-27 设计创作，主要内容包括：本发明公开了一种功率模块的制造方法,包括以下步骤：S1：取一个碳化硅多孔体置于与其大小形状相适配的模型内,紧接着将加热熔融的铝或铝合金压入到该模型内,其中加热熔融的铝或铝合金由Al-Si系合金构成,并以加压的状态进行冷却,冷却完成后,在碳化硅多孔体表面包覆规定厚度的包覆层,其中包覆层的厚度在80μm—100μm之间；S2：将S1中的碳化硅多孔体放置在切割装置上,对其进行切割加工。本发明设计合理,散热片和扩散层的设置,能够及时将工作过程中产生的热量有效的散出,且配合第一集成衬片和第二集成衬片的设置,能够进一步提高散热效果,降低功率模块工作过程中因温度过高造成的损坏风险。(The invention discloses a manufacturing method of a power module, which comprises the following steps: s1: placing a silicon carbide porous body in a mold matched with the size and shape of the silicon carbide porous body, then pressing heating molten aluminum or aluminum alloy into the mold, wherein the heating molten aluminum or aluminum alloy is composed of Al-Si series alloy and is cooled in a pressurized state, and after cooling is finished, coating the surface of the silicon carbide porous body with a coating layer with a specified thickness, wherein the thickness of the coating layer is between 80 and 100 mu m; s2: the silicon carbide porous body in S1 was placed on a cutting device, and subjected to cutting processing. The invention has reasonable design, the arrangement of the radiating fins and the diffusion layer can effectively dissipate heat generated in the working process in time, and the arrangement of the first integrated gasket and the second integrated gasket is matched, so that the radiating effect can be further improved, and the damage risk caused by overhigh temperature in the working process of the power module can be reduced.)

1. A method of manufacturing a power module, comprising the steps of:

s1: placing a silicon carbide porous body in a mould matched with the size and shape of the silicon carbide porous body, pressing heated and molten aluminum or aluminum alloy into the mould, cooling the silicon carbide porous body in a pressurized state, and coating the surface of the silicon carbide porous body with a coating layer with a specified thickness after the silicon carbide porous body is cooled;

s2: placing the silicon carbide porous body described in S1 on a cutting device, and cutting the silicon carbide porous body into a block shape;

s3: polishing the silicon carbide porous body cut in the step S2 by using a polishing tool, and measuring the thickness of the polished silicon carbide porous body by using a graduated scale to prepare the radiating fin with the thickness of 0.3-0.5 mm;

s4: selecting a metal substrate, placing an insulating plate on the top of the metal substrate, adhering a copper foil for manufacturing circuit wiring on the top of the insulating plate, etching the copper foil by using an etching tool to manufacture circuit wiring, arranging a circuit element on the manufactured circuit wiring, connecting the circuit element with the circuit wiring through a metal wire, and welding pins on the circuit wiring;

s5: preparing a mixed solution of aluminum atoms and copper atoms according to the existing proportion of the aluminum atoms and the copper atoms, pouring the prepared solution into a mold, cooling to prepare a first intermetallic compound with high aluminum content, preparing a second intermetallic compound with high copper atom content in the same way, and bonding the first metal compound and the second metal compound to prepare a heat dissipation diffusion layer;

s6: bonding the heat dissipation diffusion layer described in S5 between the top of the heat sink in S3 and the bottom of the metal base plate in S4;

s7: welding a first integrated gasket on the bottom of a radiating fin, welding a second integrated gasket on the top of circuit wiring, then placing the whole module welded with the first integrated gasket and the second integrated gasket in a packaging mold, wherein the first integrated gasket is positioned at the lowest part, pressing a pressing strip on an upper mold in the packaging mold on the second integrated gasket positioned at the highest part, positioning the vertical position of the second integrated gasket, closing the packaging mold, injecting packaging materials, and sealing a metal substrate;

s8: and cooling the packaging mold after the packaging material is injected in the step S7, so that the packaging material and the metal substrate can be closely attached to each other, and thus the power module is manufactured.

2. The method for manufacturing a power module according to claim 1, wherein in S1, the clad layer has a thickness of 80 μm to 100 μm, and the heat-melted aluminum or aluminum alloy is made of an Al — Si alloy.

3. The method for manufacturing a power module according to claim 1, wherein in S4, the insulating plate is made of a ceramic material selected from the group consisting of AlN (aluminum nitride), Si3N4 (silicon nitride), AL2O3 (aluminum oxide), and SiC (silicon carbide).

4. The method of claim 1, wherein in S4, the circuit wiring has a thickness of 0.1mm to 3.0mm, and the metal substrate has a thickness of 0.15mm to 5.0 mm.

5. The method of claim 1, wherein in S7, the first and second integrated substrates are made of epoxy resin, and the epoxy resin material is doped with a high concentration of alumina material to improve thermal conductivity.

6. The method of manufacturing a power module according to claim 1, wherein in S6, the heat diffusion layer, the heat sink, and the metal substrate are bonded by heating, and solid-phase diffusion bonding is performed by pressing in a vacuum atmosphere and holding at a heating temperature of 450 ℃ or higher and less than 548 ℃ for 5 to 240 minutes.

7. The method of claim 1, wherein in step S4, the circuit elements are soldered to the top of the circuit wiring using a solder material such as Sn — Cu, Sn — Cu — Ni, or the like.

Technical Field

The invention relates to the technical field of power modules, in particular to a manufacturing method of a power module.

Background

In a semiconductor element, a power module for high-power control has more heat productivity, good thermal design is an indispensable condition for ensuring the working stability and reliability of a device, most of the existing power modules are manufactured without a heat dissipation function and mainly formed by overlapping, welding and packaging a metal layer, an insulating layer, a wiring layer and a circuit element, the power module can generate a large amount of heat after being used for a long time, the risk of burning out caused by overhigh working temperature is often high, and the existing power module cannot meet the use requirement, so that a manufacturing method of the power module is provided for solving the problems.

Disclosure of Invention

Based on the technical problems in the background art, the invention provides a manufacturing method of a power module.

The invention provides a manufacturing method of a power module, which comprises the following steps:

s1: placing a silicon carbide porous body in a mould matched with the size and shape of the silicon carbide porous body, pressing heated and molten aluminum or aluminum alloy into the mould, cooling the silicon carbide porous body in a pressurized state, and coating the surface of the silicon carbide porous body with a coating layer with a specified thickness after the silicon carbide porous body is cooled;

s2: placing the silicon carbide porous body described in S1 on a cutting device, and cutting the silicon carbide porous body into a block shape;

s3: polishing the silicon carbide porous body cut in the step S2 by using a polishing tool, and measuring the thickness of the polished silicon carbide porous body by using a graduated scale to prepare the radiating fin with the thickness of 0.3-0.5 mm;

s4: selecting a metal substrate, placing an insulating plate on the top of the metal substrate, adhering a copper foil for manufacturing circuit wiring on the top of the insulating plate, etching the copper foil by using an etching tool to manufacture circuit wiring, arranging a circuit element on the manufactured circuit wiring, connecting the circuit element with the circuit wiring through a metal wire, and welding pins on the circuit wiring;

s5: preparing a mixed solution of aluminum atoms and copper atoms according to the existing proportion of the aluminum atoms and the copper atoms, pouring the prepared solution into a mold, cooling to prepare a first intermetallic compound with high aluminum content, preparing a second intermetallic compound with high copper atom content in the same way, and bonding the first metal compound and the second metal compound to prepare a heat dissipation diffusion layer;

s6: bonding the heat dissipation diffusion layer described in S5 between the top of the heat sink in S3 and the bottom of the metal base plate in S4;

s7: welding a first integrated gasket on the bottom of a radiating fin, welding a second integrated gasket on the top of circuit wiring, then placing the whole module welded with the first integrated gasket and the second integrated gasket in a packaging mold, wherein the first integrated gasket is positioned at the lowest part, pressing a pressing strip on an upper mold in the packaging mold on the second integrated gasket positioned at the highest part, positioning the vertical position of the second integrated gasket, closing the packaging mold, injecting packaging materials, and sealing a metal substrate;

s8: and cooling the packaging mold after the packaging material is injected in the step S7, so that the packaging material and the metal substrate can be closely attached to each other, and thus the power module is manufactured.

Preferably, in S1, the clad layer has a thickness of 80 μm to 100 μm, and the heat-melted aluminum or aluminum alloy is made of an Al — Si alloy.

In S4, the insulating plate is preferably made of a ceramic material, and is formed of a ceramic having high insulating properties, such as AlN (aluminum nitride), Si3N4 (silicon nitride), AL2O3 (aluminum oxide), or SiC (silicon carbide).

Preferably, in S4, the circuit wiring has a thickness of 0.1mm to 3.0mm, and the metal substrate has a thickness of 0.15mm to 5.0 mm.

Preferably, in S7, the first integrated substrate and the second integrated substrate are both made of epoxy resin or the like, and the epoxy resin material is doped with a high-concentration aluminum oxide material to improve the thermal conductivity thereof.

In S6, the heat diffusion layer, the heat sink, and the metal substrate are preferably bonded by heat bonding, and solid-phase diffusion bonding is preferably performed by holding the heat diffusion layer, the heat sink, and the metal substrate at a heating temperature of 450 ℃ or higher and less than 548 ℃ for 5 to 240 minutes under pressure in a vacuum atmosphere.

In S4, the circuit element is preferably soldered to the top of the circuit wiring using a solder material such as Sn — Cu, Sn — Cu — Ni, or the like.

The invention has reasonable design, the arrangement of the radiating fins and the diffusion layer can effectively dissipate heat generated in the working process in time, and the arrangement of the first integrated gasket and the second integrated gasket is matched, so that the radiating effect can be further improved, and the damage risk caused by overhigh temperature in the working process of the power module can be reduced.

Detailed Description

The present invention will be further explained with reference to specific examples.

Examples

The embodiment provides a manufacturing method of a power module, which comprises the following steps:

s1: placing a silicon carbide porous body in a mold matched with the size and shape of the silicon carbide porous body, then pressing heating molten aluminum or aluminum alloy into the mold, wherein the heating molten aluminum or aluminum alloy is composed of Al-Si series alloy and is cooled in a pressurized state, and after cooling is finished, coating the surface of the silicon carbide porous body with a coating layer with a specified thickness, wherein the thickness of the coating layer is between 80 and 100 mu m;

s2: placing the silicon carbide porous body in the step S1 on a cutting device, and cutting the silicon carbide porous body into a block shape;

s3: polishing the silicon carbide porous body cut in the step S2 by using a polishing tool, and measuring the thickness of the polished silicon carbide porous body by using a graduated scale to prepare the radiating fin with the thickness of 0.3-0.5 mm;

s4: selecting a metal substrate with the thickness of 0.15 mm-5.0 mm, placing an insulating plate on the top of the metal substrate, wherein the insulating plate is made of ceramic and is formed by any one of high-insulation ceramic such as AlN (aluminum nitride), Si3N4 (silicon nitride), AL2O3 (aluminum oxide) or SiC (silicon carbide), pasting a copper foil for manufacturing circuit wiring on the top of the insulating plate, etching the copper foil by using an etching tool to manufacture the circuit wiring, the thickness of the circuit wiring is 0.1 mm-3.0 mm, arranging a circuit element on the manufactured circuit wiring, connecting the circuit element and the circuit wiring through a metal wire, and welding pins on the circuit wiring, wherein the circuit element is welded on the top of the circuit wiring by adopting tin soldering materials such as Sn-Cu, Sn-Cu-Ni and the like;

s5: preparing a mixed solution of aluminum atoms and copper atoms according to the existing proportion of the aluminum atoms and the copper atoms, pouring the prepared solution into a mold, cooling to prepare a first intermetallic compound with high aluminum content, preparing a second intermetallic compound with high copper atom content in the same way, and bonding the first metal compound and the second metal compound to prepare a heat dissipation diffusion layer;

s6: bonding the heat diffusion layer in S5 between the top of the heat sink in S3 and the bottom of the metal substrate in S4 in such a manner that the heat diffusion layer and the heat sink are bonded by heating, and performing solid phase diffusion bonding by holding the heat diffusion layer and the metal substrate in a vacuum atmosphere at a heating temperature of 450 ℃ or higher and less than 548 ℃ for 5 to 240 minutes under pressure;

s7: welding a first integrated gasket on the bottom of a radiating fin, welding a second integrated gasket on the top of circuit wiring, wherein the first integrated gasket and the second integrated gasket are both made of materials such as epoxy resin, and high-concentration aluminum oxide materials are doped in the epoxy resin materials to improve the heat conductivity of the first integrated gasket and the second integrated gasket;

s8: and cooling the packaging mold after the packaging material is injected in the step S7, so that the packaging material and the metal substrate can be closely attached to each other, and thus the power module is manufactured.

The above description is only for the preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art should be considered to be within the technical scope of the present invention, and the technical solutions and the inventive concepts thereof according to the present invention should be equivalent or changed within the scope of the present invention.