阅读说明：本技术 一种高斯脉冲功率放大器及发射机 (Gaussian pulse power amplifier and transmitter ) 是由 刘建波 梁云忠 于 2021-10-21 设计创作，主要内容包括：本发明公开了一种高斯脉冲功率放大器及发射机,其中,高斯脉冲功率放大器包括输入巴伦,所述输入巴伦的输入端与高斯脉冲信号源连接,输出端与第一微带线的一端连接,所述第一微带线的另一端与推挽功率放大器的输入端连接,所述第一微带线与所述推挽功率放大器之间还连接有第二微带线；所述推挽功率放大器的输出端与匹配电路的输入端连接,所述匹配电路的输出端与输出巴伦连接；通过将高斯信号作为输入源,高斯信号经过输入巴伦的阻抗转换后输入到推挽功率放大器进行放大,放大后利用匹配电路对其输出进行匹配,这样能够是的信号放大后不失真的同时降低频谱的占用宽度,且不会带来多余的频谱信号,保证了杂波的抑制度。(The invention discloses a Gaussian pulse power amplifier and a transmitter, wherein the Gaussian pulse power amplifier comprises an input balun, the input end of the input balun is connected with a Gaussian pulse signal source, the output end of the input balun is connected with one end of a first microstrip line, the other end of the first microstrip line is connected with the input end of a push-pull power amplifier, and a second microstrip line is connected between the first microstrip line and the push-pull power amplifier; the output end of the push-pull power amplifier is connected with the input end of the matching circuit, and the output end of the matching circuit is connected with the output balun; the Gaussian signal is used as an input source, the Gaussian signal is input to the push-pull power amplifier for amplification after being subjected to impedance conversion of the input balun, and the output of the Gaussian signal is matched by the matching circuit after being amplified, so that the occupied width of a frequency spectrum is reduced while the signal is not distorted after being amplified, redundant frequency spectrum signals cannot be brought, and the suppression degree of clutter is ensured.)

1. A gaussian pulse power amplifier comprising an input balun, characterized in that:

the input end of the input balun is connected with a Gaussian pulse signal source, the output end of the input balun is connected with one end of a first microstrip line, the other end of the first microstrip line is connected with the input end of a push-pull power amplifier, and a second microstrip line is further connected between the first microstrip line and the push-pull power amplifier;

the output end of the push-pull power amplifier is connected with the input end of the matching circuit, and the output end of the matching circuit is connected with the output balun;

a feedback circuit is further arranged between the output end of the push-pull power amplifier and the output end of the input balun;

the output end of the input balun is connected with an input bias circuit;

and the output end of the push-pull power amplifier is connected with an output bias circuit.

2. The gaussian pulse power amplifier according to claim 1, wherein: the push-pull power amplifier is an N-channel bipolar MOS tube, a grid electrode of the bipolar MOS tube is connected with an output end of the input balun, and a drain electrode of the bipolar MOS tube is connected with the output balun.

3. The gaussian pulse power amplifier according to claim 2, wherein: the feedback circuit comprises a first capacitor and a first resistor, one end of the first resistor is connected with the drain electrode of the bipolar MOS tube, the other end of the first resistor is connected with one end of the first capacitor, and the other end of the first capacitor is connected with the output end of the input balun.

4. The gaussian pulse power amplifier according to claim 1, wherein: the matching circuit comprises a third microstrip line, one end of the third microstrip line is connected with the output end of the push-pull power amplifier, the other end of the third microstrip line is connected with one end of a fourth microstrip line, and the other end of the fourth microstrip line is connected with the output balun.

5. The gaussian pulse power amplifier according to claim 1, wherein: the output bias circuit comprises three second capacitors connected in parallel, one end of each second capacitor is grounded, the other end of each second capacitor is connected with a power supply and one end of a second resistor, the other end of each second resistor is connected with one end of a third capacitor, and the other end of each third capacitor is grounded; and a first inductor is also connected between the second resistor and the third capacitor.

6. The gaussian pulse power amplifier according to claim 1, wherein: the input bias circuit comprises a fourth capacitor, one end of the fourth capacitor is grounded, the other end of the fourth capacitor is connected with a power supply and one end of a third resistor, the other end of the third resistor is connected with one end of a fifth capacitor, and the other end of the fifth capacitor is grounded; and a second inductor is also connected between the third resistor and the fifth capacitor.

7. The gaussian pulse power amplifier according to claim 1, wherein: and a first port of the input balun is connected with the Gaussian pulse signal source, a second port of the input balun is grounded, and the other two ports of the input balun are connected with the input end of the push-pull power amplifier.

8. The gaussian pulse power amplifier according to claim 1, wherein: and a first port of the output balun is connected with an output interface, a second port of the output balun is grounded, and the other two ports of the output balun are connected with the output end of the push-pull power amplifier.

9. The Gaussian pulse power amplifier according to claim 7 or 8, characterized in that the impedance ratio of the input balun to the output balun is 1: 9.

10. A transmitter comprising a gaussian pulse power amplifier according to any one of claims 1-9.

Technical Field

The invention relates to the field of microwave radio frequency, in particular to a power amplifier and a transmitter.

Background

Microwave technology has very wide application in civil communication, military communication and detection in modern society. In order to ensure that various signals cannot interfere with each other, each country has independent radio frequency use range division standards, but with the breakthrough and rapid development of the technology in the microwave field of the new era, a plurality of frequency occupied areas are nearly saturated, and the signal modes of each frequency domain interval are more complex.

In a traditional solid-state transmitter, in order to solve the efficiency problem, a rectangular pulse power amplification mode is generally selected for signal amplification. The rectangular pulse is embodied as a signal formed by combining a sine wave and odd and even harmonics thereof on a frequency domain, so that the spectrum characteristics of the amplifier during operation are centered on the operation center frequency, the frequency spectrums of the pulse signals are symmetrically distributed on two sides, the frequency spectrum occupies a wider range, and the interference outside the main frequency is larger.

Disclosure of Invention

In order to solve the above problems, the present invention provides a power amplifier and a transmitter that improve the spectrum occupancy rate and greatly reduce the electromagnetic interference.

In order to achieve the above object, an aspect of the present invention provides a gaussian pulse power amplifier, including an input balun, an input end of the input balun is connected to a gaussian pulse signal source, an output end of the input balun is connected to one end of a first microstrip line, another end of the first microstrip line is connected to an input end of a push-pull power amplifier, and a second microstrip line is further connected between the first microstrip line and the push-pull power amplifier; the output end of the push-pull power amplifier is connected with the input end of the matching circuit, and the output end of the matching circuit is connected with the output balun; a feedback circuit is further arranged between the output end of the push-pull power amplifier and the output end of the input balun; the output end of the input balun is connected with an input bias circuit; and the output end of the push-pull power amplifier is connected with an output bias circuit.

As a preferable technical solution, the push-pull power amplifier is an N-channel bipolar MOS transistor, a gate of the bipolar MOS transistor is connected to the output terminal of the input balun, and a drain of the bipolar MOS transistor is connected to the output balun.

Preferably, the feedback circuit includes a first capacitor and a first resistor, one end of the first resistor is connected to the drain of the bipolar MOS transistor, the other end of the first resistor is connected to one end of the first capacitor, and the other end of the first capacitor is connected to the output end of the input balun.

As a preferred technical solution, the matching circuit includes a third microstrip line, one end of the third microstrip line is connected to the output end of the push-pull power amplifier, the other end of the third microstrip line is connected to one end of a fourth microstrip line, and the other end of the fourth microstrip line is connected to the output balun.

As a preferred technical solution, the output bias circuit includes three second capacitors connected in parallel, one end of each second capacitor is grounded, the other end of each second capacitor is connected to a power supply and one end of a second resistor, the other end of each second resistor is connected to one end of a third capacitor, and the other end of each third capacitor is grounded; and a first inductor is also connected between the second resistor and the third capacitor.

As a preferred technical solution, the input bias circuit includes a fourth capacitor, one end of the fourth capacitor is grounded, the other end of the fourth capacitor is connected to the power supply and one end of a third resistor, the other end of the third resistor is connected to one end of a fifth capacitor, and the other end of the fifth capacitor is grounded; and a second inductor is also connected between the third resistor and the fifth capacitor.

As a preferred technical solution, a first port of the input balun is connected to the gaussian pulse signal source, a second port is grounded, and the other two ports are connected to the input end of the push-pull power amplifier.

As a preferred technical solution, a first port of the output balun is connected to the output interface, a second port is grounded, and the other two ports are connected to the output end of the push-pull power amplifier.

Preferably, the impedance ratio of the input balun to the output balun is 1: 9.

On the other hand, the invention also provides a transmitter, which comprises the gaussian pulse power amplifier described in any one of the above technical solutions.

Compared with the prior art, the invention has the beneficial effects that: according to the invention, the Gaussian signal is used as an input source, the Gaussian signal is input to the push-pull power amplifier for amplification after being subjected to impedance conversion of the input balun, the output of the Gaussian signal is matched by using the matching circuit after being amplified, and finally the Gaussian signal is output by the output balun, so that the occupied width of a frequency spectrum is reduced while the signal is not distorted after being amplified, redundant frequency spectrum signals are not brought, and the suppression degree of clutter is ensured. The transmitter output signal of the Gaussian pulse amplifier can reduce the electromagnetic interference of a high-power transmitter system to other equipment and signals, and improve the electromagnetic compatibility and the spectrum occupancy rate of products.

Drawings

FIG. 1 is a block diagram of a schematic circuit diagram of a Gaussian pulse amplifier provided by the present invention;

FIG. 2 is a schematic circuit diagram of a Gaussian pulse amplifier provided by the present invention;

FIG. 3 is a block diagram of a model of an input balun and an output balun provided by the present invention;

FIG. 4 is a schematic diagram of an output bias circuit provided by the present invention;

fig. 5 is a schematic diagram of an output bias circuit provided by the present invention.

Detailed Description

The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.

As used in this application and the appended claims, the terms "a," "an," "the," and/or "the" are not intended to be inclusive in the singular, but rather are intended to be inclusive in the plural unless the context clearly dictates otherwise. In general, the terms "comprises" and "comprising" merely indicate that steps and elements are included which are explicitly identified, that the steps and elements do not form an exclusive list, and that a method or apparatus may include other steps or elements.

The relative arrangement of the components and steps, the numerical expressions, and numerical values set forth in these embodiments do not limit the scope of the present application unless specifically stated otherwise. Meanwhile, it should be understood that the sizes of the respective portions shown in the drawings are not drawn in an actual proportional relationship for the convenience of description. Techniques, methods, and apparatus known to those of ordinary skill in the relevant art may not be discussed in detail but are intended to be part of the specification where appropriate. In all examples shown and discussed herein, any particular value should be construed as merely illustrative, and not limiting. Thus, other examples of the exemplary embodiments may have different values. It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, further discussion thereof is not required in subsequent figures.

It should be noted that the terms "first", "second", and the like are used to define the components, and are only used for convenience of distinguishing the corresponding components, and the terms have no special meanings unless otherwise stated, and therefore, the scope of protection of the present application is not to be construed as being limited. Further, although the terms used in the present application are selected from publicly known and used terms, some of the terms mentioned in the specification of the present application may be selected by the applicant at his or her discretion, the detailed meanings of which are described in relevant parts of the description herein. Further, it is required that the present application is understood not only by the actual terms used but also by the meaning of each term lying within.

Referring to fig. 1, the present embodiment provides a gaussian pulse power amplifier, which includes an input balun 20, an input terminal of the input balun 20 is connected to a gaussian pulse signal source 10, an output terminal of the input balun is connected to an input terminal of a push-pull power amplifier 30, an output terminal of the push-pull power amplifier 30 is connected to an input terminal of a matching circuit 40, and an output terminal 40 of the matching circuit is connected to an input terminal of an output balun 50.

In addition, a feedback circuit 60 is further arranged between the output end of the push-pull power amplifier 30 and the output end of the input balun 20; the output end of the input balun 20 is connected with an input bias circuit 70; an output bias circuit 80 is connected to the output terminal of the push-pull power amplifier 30.

In this embodiment, the push-pull power amplifier 30 employs an N-channel bipolar MOS transistor, and the N-channel bipolar MOS transistor can perform work modulation on the power transistor by controlling the amplitude level of the input signal, so that the power transistor can also perform work modulation on the power transistor by using a gaussian pulse signal as the input signal without performing power supply modulation, thereby implementing pulse work.

Fig. 2 is a schematic circuit diagram of the gaussian pulse power amplifier provided in this embodiment, in which a gaussian pulse signal source S4 is connected to one input port of an input balun S1, two output ports of the input balun S1 are respectively connected to a microstrip line TL1 and a microstrip line TL2, the other ends of the microstrip line TL1 and the microstrip line TL2 are respectively connected to two gates of an N-channel bipolar MOS transistor S2, and a microstrip line TL3 is further disposed between the two gates of the bipolar MOS transistor S2 and the microstrip lines TL1 and TL 2.

Furthermore, two drains of the bipolar MOS transistor S2 are connected to one end of a microstrip line TL4, the other end of the microstrip line TL4 is connected to a microstrip line TL5 and a microstrip line TL6, the other ends of the microstrip line TL5 and the microstrip line TL6 are connected to two input ports of the output balun S4, and a capacitor C3 is further disposed between the microstrip line TL5 and the microstrip line TL6 for filtering.

Referring to fig. 3, in the present embodiment, the impedance ratio of the input balun S1 and the output balun S3 is 1:9, one port of the input balun S1 is connected to the gaussian pulse signal source, one port is grounded, and the other two ports are connected to the input end of the push-pull power amplifier; one port of the output balun S3 is connected with the output interface, one port is grounded, and the other two ports are connected with the output end of the push-pull power amplifier S2. The equivalent impedance of the input balun S1 and the output balun S3 under the working frequency approaches to the impedance value of the power tube, the design mode can be matched with the power tube more effectively, and the use efficiency of the power tube is improved.

Referring to fig. 1 and 2, in the present embodiment, a feedback circuit 60 is disposed between two gates of the bipolar MOS transistor S2 and two output ports of the input balun S1. The feedback circuit 60 includes a capacitor and a resistor, in this embodiment, one gate of the bipolar MOS transistor S2 is connected to one end of the resistor R1, the other end of the resistor R1 is connected to one end of the capacitor C1, the other end of the capacitor C1 is connected to one output terminal of the input balun S1, the other gate of the MOS transistor S2 is connected to one end of the resistor R2, the other end of the resistor R2 is connected to one end of the capacitor C2, and the other end of the capacitor C2 is connected to the other output port of the input balun S1.

It should be noted here that, since the structures of the output bias circuits 80 connected to the two drains of the bipolar MOS transistors are the same, in this embodiment, the structure of one of the output bias circuits is described, referring to fig. 4, the output bias circuit 80 includes three capacitors C6, C7, and C8 connected in parallel, one end of each of the capacitors C6, C7, and C8 is grounded, the other end of each of the capacitors C6, C3884 is connected to the power supply and one end of the resistor R4, the other end of the resistor R4 is connected to one end of the capacitor C9, and the other end of the capacitor C9 is grounded; an inductor L2 is also connected between the resistor R4 and the capacitor C9.

Referring to fig. 5, the input bias circuit includes a capacitor C4, one end of the capacitor C4 is grounded, the other end is connected to a power supply and one end of a resistor R3, the other end of the resistor R3 is connected to one end of a capacitor C5, and the other end of the capacitor C5 is grounded; an inductor L1 is also connected between the resistor R3 and the capacitor C5.

According to the invention, the Gaussian signal is used as an input source, the Gaussian signal is input to the push-pull power amplifier for amplification after being subjected to impedance conversion of the input balun, the output of the Gaussian signal is matched by using the matching circuit after being amplified, and finally the Gaussian signal is output by the output balun, so that the occupied width of a frequency spectrum is reduced while the signal is not distorted after being amplified, redundant frequency spectrum signals are not brought, and the suppression degree of clutter is ensured.

In addition, the present embodiment further provides a transmitter, which includes the gaussian power amplifier described in the foregoing embodiments. The transmitter can be applied to HF and VHF transmitters, and it should be noted that, since the circuit structure and the operation principle of the gaussian power amplifier have been described in detail in the above embodiments, please refer to the above embodiments, and details are not repeated herein.

The occupied frequency spectrum amplified by the Gaussian signal is far smaller than that amplified by the rectangular pulse signal, the transmitter manufactured by the Gaussian pulse amplifier has small occupied frequency spectrum of output signals, the electromagnetic compatibility of the transmitter is greatly improved, the realization mode can be used in various radar transmitter systems, the frequency spectrum occupancy rate can be effectively improved, and the influence of electromagnetic interference on other equipment is greatly reduced.

The above description is only an embodiment of the present invention, and not intended to limit the scope of the present invention, and all modifications of equivalent structures and equivalent processes performed by the present specification and drawings, or directly or indirectly applied to other related technical fields, are included in the scope of the present invention.