阅读说明：本技术 一种应用于硫酸锰生产的结晶除杂监控系统 (Crystallization impurity removal monitoring system applied to manganese sulfate production ) 是由 黄炎善 肖宏 鲁生勇 吴文英 陈凯琳 陈盼 李松林 潘韦靖 邓斐 黄洁莉 胡旺 于 2021-08-23 设计创作，主要内容包括：本发明提供了一种应用于硫酸锰生产的结晶除杂监控系统,所述监控系统包括检测模块、计算处理模块、控制模块,所述检测模块用于检测结晶除杂过程中的各个环境参数,所述检测模块包括自变检测单元和因变检测单元,所述计算处理模块用于处理因变检测单元检测的数据并输出控制数据给所述控制模块,所述控制模块接收所述控制数据和所述自变检测单元检测的数据后输出控制指令给相应的结晶除杂执行模块；所述因变检测系统通过检测晶液中析出的固体对因变检测单元形成的压力的区别来判断在除杂和结晶过程中析出的固体是否为硫酸锰来对整个除杂和结晶过程进行控制,从而提高硫酸锰的提取率和纯度。(The invention provides a crystallization impurity removal monitoring system applied to manganese sulfate production, which comprises a detection module, a calculation processing module and a control module, wherein the detection module is used for detecting each environmental parameter in a crystallization impurity removal process, the detection module comprises a self-variation detection unit and a dependent variation detection unit, the calculation processing module is used for processing data detected by the dependent variation detection unit and outputting control data to the control module, and the control module receives the control data and the data detected by the dependent variation detection unit and then outputs a control instruction to a corresponding crystallization impurity removal execution module; the dependent variable detection system judges whether the solid precipitated in the impurity removal and crystallization process is manganese sulfate or not by detecting the difference of the solid precipitated in the crystal liquid and the pressure formed by the dependent variable detection unit so as to control the whole impurity removal and crystallization process, thereby improving the extraction rate and purity of the manganese sulfate.)

1. The system is characterized by comprising a detection module, a calculation processing module and a control module, wherein the detection module is used for detecting each environmental parameter in the crystallization impurity removal process, the detection module comprises a self-variation detection unit and a dependent variation detection unit, the calculation processing module is used for processing data detected by the dependent variation detection unit and outputting control data to the control module, and the control module receives the control data and the data detected by the dependent variation detection unit and then outputs a control instruction to a corresponding crystallization impurity removal execution module;

the dependent detection unit comprises a micro-pressure detection unit, a density detection unit and a liquid level detection unit, wherein the density detection unit is used for detecting the density rho (t) of the crystal liquid, and the liquid level detection unit is used for detecting the liquid levelThe detection unit is used for detecting the liquid level height h (t) of the liquid crystal, the micro-pressure detection unit comprises a plurality of micro-pressure sensors, each micro-pressure sensor is used for detecting the pressure F (t) on the bottom of the liquid crystal, and the calculation processing unit calculates the pressure F on the micro-pressure detection unit caused by the solid particles according to the detection data_n：

Wherein n represents the pressure formed by the same solid particle on n micro-pressure sensors, k is the distribution coefficient of the micro-pressure sensors, g is the gravity acceleration, and F_i(t) represents a pressure value detected by the ith micro-pressure sensor;

obtaining n as (1, 4.. multidot.m)²) F is_nAverage value, forming embossingsComparing the embossing with the embossing data of manganese sulfate in a database to judge whether the solid particles are manganese sulfate;

in the impurity removal process, if manganese sulfate appears, the impurity removal process is stopped;

during the crystallization process, if non-manganese sulfate material is present, the crystallization environment is changed to re-dissolve impurities in the liquid.

2. The system for monitoring crystallization and impurity removal applied to manganese sulfate production as claimed in claim 1, wherein the calculation processing module is used for judging the solid by calculating an embossing difference index Q, and the calculation formula of Q is as follows:

wherein, the number sequenceEmbossing of manganese sulfate, k₁、k₂、...、k_mIn order to be the coefficient of difference,

when the coefficient of difference is less than the threshold value, the solid is manganese sulfate.

3. The system for monitoring crystallization and impurity removal applied to manganese sulfate production as claimed in claim 2, wherein the micro-pressure detection unit is zeroed before use, so that the detection value of each micro-pressure sensor satisfies the following equation:

F(t)＝ρ(t)·g·h(t)·S；

wherein S is the stress area of the micro-pressure sensor.

4. The system for monitoring crystallization and impurity removal applied to manganese sulfate production as claimed in claim 3, wherein the database further comprises embossings of other impurities, and the calculation processing module calculates an embossing difference index Q according to the embossings of the impurities so as to determine whether the solid particles are corresponding impurities.

5. The crystallization impurity-removal monitoring system applied to manganese sulfate production as set forth in claim 4, wherein the difference coefficient satisfies a rule decreasing with an increase of subscript, and a specific formula is set as follows:

Technical Field

The invention relates to the technical field of production control, in particular to a crystallization impurity removal monitoring system applied to manganese sulfate production.

Background

Manganese sulfate is a common chemical substance in many industrial productions, the existing manganese sulfate production technology is continuously improved, while the crystallization and impurity removal process in the manganese sulfate production is a key process influencing the extraction rate and purity of manganese sulfate, the existing technology mainly improves the process, but a system for monitoring the process is relatively lacked.

A plurality of crystallization and impurity removal systems are developed at present, and through a great amount of search and reference, the existing crystallization and impurity removal systems are found as the systems disclosed in the publication numbers KR100393648B1, KR101289792B1, CN105905951B and KR100399200B1, dilute sulfuric acid is adopted to adjust the pH value of a crude cobalt sulfate solution to be less than or equal to 2.5, 40% formaldehyde solution with 0.4-0.5 times of the mass of nitrate radical is added into the cobalt sulfate solution, reaction is carried out at 75-85 ℃, then 30% hydrogen peroxide with 1.4-1.5 times of the mass of formaldehyde is used for removing residual formaldehyde in the reaction, and high-purity cobalt sulfate heptahydrate is obtained through filtration, concentration, cooling and crystallization. The impurity removal method disclosed by the invention is simple and convenient to operate, short in production flow, mild in process conditions and easy to control, the target product, gas and water are removed in the reaction process, no other impurities are generated, the nitrate impurity can be effectively removed, and the content of the nitrate impurity in the obtained cobalt sulfate hexahydrate product can be below 0.02%. However, the system does not monitor the crystallization and impurity removal process, so that the extraction rate and purity of the final finished product are still to be improved.

Disclosure of Invention

The invention aims to provide a crystallization impurity removal monitoring system applied to manganese sulfate production aiming at the defects,

the invention adopts the following technical scheme:

the system is characterized by comprising a detection module, a calculation processing module and a control module, wherein the detection module is used for detecting each environmental parameter in the crystallization impurity removal process, the detection module comprises a self-variation detection unit and a dependent variation detection unit, the calculation processing module is used for processing data detected by the dependent variation detection unit and outputting control data to the control module, and the control module receives the control data and the data detected by the dependent variation detection unit and then outputs a control instruction to a corresponding crystallization impurity removal execution module;

the factor detection unit comprises a micro-pressure detection unit, a density detection unit and a liquid level detection unit, the density detection unit is used for detecting the density rho (t) of the liquid crystal, the liquid level detection unit is used for detecting the liquid level height h (t) of the liquid crystal, the micro-pressure detection unit comprises a plurality of micro-pressure sensors, each micro-pressure sensor is used for detecting the pressure F (t) applied to the bottom of the liquid crystal, and the calculation processing unit calculates the pressure F caused by the solid particles to the micro-pressure detection unit according to the detection data_n：

Wherein n represents the pressure formed by the same solid particle on n micro-pressure sensors, k is the distribution coefficient of the micro-pressure sensors, g is the gravity acceleration, and F_i(t) represents the ithA pressure value detected by the micro-pressure sensor;

obtaining n as (1, 4.. multidot.m)²) F is_nAverage value, forming embossingsComparing the embossing with the embossing data of manganese sulfate in a database to judge whether the solid particles are manganese sulfate;

in the impurity removal process, if manganese sulfate appears, the impurity removal process is stopped;

in the crystallization process, if a non-manganese sulfate substance appears, changing the crystallization environment to re-dissolve impurities in the liquid;

further, the calculation processing module judges the solid by calculating an embossing difference index Q, wherein the calculation formula of Q is as follows:

wherein, the number sequenceEmbossing of manganese sulfate, k₁、k₂、...、k_mIn order to be the coefficient of difference,

when the difference coefficient is smaller than the threshold value, the solid is manganese sulfate;

further, the micro-pressure detecting unit performs zero setting before use so that the detection value of each micro-pressure sensor satisfies the following equation:

F(t)＝ρ(t)·g·h(t)·S；

wherein S is the stress area of the micro-pressure sensor;

further, the database also comprises embossings of other impurities, and the calculation processing module calculates an embossing difference index Q according to the embossings of the magazines so as to judge whether the solid particles are the corresponding impurities;

further, the difference coefficient satisfies a rule that decreases with an increase in subscripts, and the specific formula is set as:

the beneficial effects obtained by the invention are as follows:

the system judges the components of the solid by detecting the change of the pressure value of the solid precipitated in the crystal liquid to the micro-pressure detection unit, the process is a physical process, the manganese sulfate crystal obtained in the crystallization and impurity removal processes cannot be influenced, and the physical properties of different objects are different, so that the detection effect is good, the misjudgment rate is low, the interference on the crystallization and impurity removal processes is timely carried out according to the judgment result, the retention rate of manganese sulfate is improved in the impurity removal process, and the purity of manganese sulfate is improved in the crystallization process.

Drawings

The invention will be further understood from the following description in conjunction with the accompanying drawings. The components in the figures are not necessarily to scale, emphasis instead being placed upon illustrating the principles of the embodiments. Like reference numerals designate corresponding parts throughout the different views.

FIG. 1 is a schematic view of an overall structural framework;

FIG. 2 is a schematic diagram of a micro-pressure sensor of the micro-pressure detecting unit for detecting solid;

FIG. 3 is a schematic diagram showing a variation of precipitated solids;

FIG. 4 is a schematic illustration of embossing calculation;

fig. 5 is a schematic diagram showing the comparison between manganese sulfate embossings and impurity embossings.

Detailed Description

In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is further described in detail below with reference to embodiments thereof; it should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention. Other systems, methods, and/or features of the present embodiments will become apparent to those skilled in the art upon review of the following detailed description. It is intended that all such additional systems, methods, features and advantages be included within this description, be within the scope of the invention, and be protected by the accompanying claims. Additional features of the disclosed embodiments are described in, and will be apparent from, the detailed description that follows.

The same or similar reference numerals in the drawings of the embodiments of the present invention correspond to the same or similar components; in the description of the present invention, it should be understood that if there is an orientation or positional relationship indicated by terms such as "upper", "lower", "left", "right", etc., based on the orientation or positional relationship shown in the drawings, it is only for convenience of description and simplification of description, but it is not indicated or implied that the device or component referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore, the terms describing the positional relationship in the drawings are only used for illustrative purposes and are not to be construed as limitations of the present patent, and specific meanings of the terms may be understood by those skilled in the art according to specific situations.

The first embodiment.

The embodiment provides a crystallization impurity removal monitoring system applied to manganese sulfate production, and the monitoring system comprises a detection module, a calculation processing module and a control module, wherein the detection module is used for detecting each environmental parameter in a crystallization impurity removal process, the detection module comprises a self-variation detection unit and a dependent variation detection unit, the calculation processing module is used for processing data detected by the dependent variation detection unit and outputting control data to the control module, and the control module receives the control data and the data detected by the dependent variation detection unit and then outputs a control instruction to a corresponding crystallization impurity removal execution module;

the factor detection unit comprises a micro-pressure detection unit, a density detection unit and a liquid level detection unit, the density detection unit is used for detecting the density rho (t) of the liquid crystal, the liquid level detection unit is used for detecting the liquid level height h (t) of the liquid crystal, the micro-pressure detection unit comprises a plurality of micro-pressure sensors, each micro-pressure sensor is used for detecting the pressure F (t) applied to the bottom of the liquid crystal, and the calculation processing unit calculates the pressure F caused by the solid particles to the micro-pressure detection unit according to the detection data_n：

Wherein n represents the pressure formed by the same solid particle on n micro-pressure sensors, k is the distribution coefficient of the micro-pressure sensors, g is the gravity acceleration, and F_i(t) represents a pressure value detected by the ith micro-pressure sensor;

obtaining n as (1, 4.. multidot.m)²) F is_nAverage value, forming embossingsComparing the embossing with the embossing data of manganese sulfate in a database to judge whether the solid particles are manganese sulfate;

in the impurity removal process, if manganese sulfate appears, the impurity removal process is stopped;

in the crystallization process, if a non-manganese sulfate substance appears, changing the crystallization environment to re-dissolve impurities in the liquid;

the calculation processing module judges the solid through calculating an embossing difference index Q, and the calculation formula of Q is as follows:

wherein, the number sequenceEmbossing of manganese sulfate, k₁、k₂、...、k_mIn order to be the coefficient of difference,

when the difference coefficient is smaller than the threshold value, the solid is manganese sulfate;

the micro-pressure detection unit is zeroed before use, so that the detection value of each micro-pressure sensor satisfies the following equation:

F(t)＝ρ(t)·g·h(t)·S；

wherein S is the stress area of the micro-pressure sensor;

the database also comprises embossing of other impurities, and the calculation processing module calculates an embossing difference index Q according to the embossing of the magazine so as to judge whether the solid particles are the corresponding impurities;

the difference coefficient satisfies the rule of decreasing with the increase of subscript, and the specific formula is set as:

example two.

The embodiment includes the whole content of the first embodiment, and with reference to fig. 1, the embodiment provides a crystallization impurity removal monitoring system applied to manganese sulfate production, where the monitoring system includes a detection module, a calculation processing module, and a control module, the detection module is configured to detect various environmental parameters in a crystallization impurity removal process, where the environmental parameters include a self-variation environmental parameter and a dependent variation environmental parameter, the detection module correspondingly includes a self-variation detection unit and a dependent variation detection unit, the calculation processing module is configured to process data detected by the dependent variation detection unit and output control data to the control module, and the control module receives the control data and data detected by the dependent variation detection unit and then outputs a control instruction to a corresponding crystallization impurity removal execution module;

the system comprises a crystallization impurity removal process, a self-changing detection unit, a factor detection unit, a density detection unit and a liquid level detection unit, wherein the crystallization impurity removal process comprises five processes of concentration impurity removal, filter pressing, high-temperature crystallization, crystal liquid separation and centrifugal dehydration;

in the processes of concentration impurity removal and high-temperature crystallization, although the principle of evaporating water to separate out solids is utilized, when impurities are separated out in the process of concentration impurity removal, if manganese sulfate crystals are detected to be separated out, the process of crystallization impurity removal needs to be ended, and if impurities are detected to be opposite, the crystallization environment needs to be properly changed;

the micro-pressure detection unit, the density detection unit and the liquid level detection unit are used for collecting and analyzing data required by the precipitated solid component, the micro-pressure detection unit is a rigid film body covered at the bottom of the liquid crystal, micro-pressure sensors are uniformly distributed on the film body, the micro-pressure sensors are connected through data lines, the data lines are located inside the film body, a closed space is formed inside the film body, the data lines are in a waterproof state, data aggregation points are arranged at the boundary of the film body, and the data aggregation points are connected with the calculation processing module;

referring to fig. 2, when no solid is precipitated in the crystal liquid, the pressure value detected by the micro-pressure detection unit is hydraulic pressure, the hydraulic pressure can also be calculated by the data detected by the density detection unit and the liquid level detection unit, when the detected hydraulic pressure value is consistent with the calculated hydraulic pressure value, and the data detected by all the micro-pressure sensors are kept consistent, when solid is separated out from the crystal liquid, the solid can fall on the micro-pressure sensors in a certain area, the pressure detected by the corresponding micro-pressure sensor is the sum of the hydraulic pressure and the solid pressure, the detection data of all the micro-pressure sensors are differentiated, the pressure caused by the solid to the micro-pressure sensor is the difference between the gravity and the buoyancy of the micro-pressure sensor, and because the physical properties of the solids of different substances are different, whether the solids are manganese sulfate crystals or not can be analyzed by calculating the pressure of the solids and according to the change of the pressure of the solids.

Example three.

In the present embodiment, including all the contents of the above embodiments, in the processes of concentration, impurity removal and high-temperature crystallization, as moisture is continuously evaporated, the data detected by the density detection unit and the data detected by the liquid level detection unit change in real time, the density data detected by the density detection unit is denoted as ρ (t), and the data detected by the liquid level detection unit is denoted as h (t);

before the micro-pressure detection unit is formally used, all micro-pressure sensors need to be zeroed, so that the detection data F (t) of the micro-pressure sensors meet the following conditions:

F(t)＝ρ(t)·g·h(t)·S；

wherein g is the gravity acceleration, and S is the stress area of the micro-pressure sensor;

when solids are separated out, the pressure value of the solids on the micro-pressure sensor is as follows:

F＝F(t)-ρ(t)·g·V；

wherein V is the volume of precipitated solids;

referring to FIG. 3, as the volume of the precipitated solid mass increases, it is agreed that the solid mass will exert pressure on the plurality of micro-pressure sensors, using F_nThe sum of the pressures of the solid block on the n micro-pressure sensors is represented:

wherein, F_i(t) represents the real-time detection pressure value of the ith micro-pressure sensor;

to some extent, the volume V of the solid mass has the following relationship to n:

wherein k is a coefficient and is related to the distribution density of the micro-pressure sensor, and a specific numerical value is measured by experimental data;

then F_nThe expression of (c) can be written as:

obtaining the same solid block separatelyValues and processed into mean valuesSaid array of numbersThe solid is called as embossed grain, and the embossed grain is compared with manganese sulfate embossed grains in a calculation processing module database to judge whether the solid is manganese sulfate;

combining FIG. 4 and FIG. 5, small black dotsIs the average height of the curve in the portion where n is 0 to 1, and has small black spotsIs the average height of the curve in the section n of 3 to 4;

the calculation processing module judges the components of the solid by calculating an embossing difference index Q, and the calculation formula of Q is as follows:

wherein, the number sequenceEmbossing of manganese sulfate, k₁、k₂、...、k_mIs a coefficient of difference;

due to the formulaThe actual relation is deviated as n is increased, and the larger n is, the larger deviation is, in order to reduce the influence caused by the deviation, the difference coefficient is reduced as the small target is increased, and the formula of the difference coefficient is as follows:

when the embossing difference index Q is smaller than a threshold value, considering the corresponding solid to be manganese sulfate;

in order to make the result of judging the solid content more accurate, the embossing may be configured toThe corresponding embossing difference index Q is changed to:

the formula of the difference coefficient is changed to:

when the setting of the embossing is changed, the threshold value of the embossing difference index is correspondingly changed;

when manganese sulfate is detected to be separated out in the concentration impurity removal process, stopping the concentration separation process, and replenishing water again according to the height of the liquid level reduction of the manganese sulfate in the current time period so as to dissolve the separated manganese sulfate in the crystal liquid;

when a substance other than manganese sulfate is detected to be separated out in the high-temperature crystallization process, the temperature is changed to improve the solubility of the corresponding substance, and high-purity manganese sulfate crystals are obtained as much as possible in the high-temperature crystallization process.

Although the invention has been described above with reference to various embodiments, it should be understood that many changes and modifications may be made without departing from the scope of the invention. That is, the methods, systems, and devices discussed above are examples. Various configurations may omit, substitute, or add various procedures or components as appropriate. For example, in alternative configurations, the methods may be performed in an order different than that described, and/or various components may be added, omitted, and/or combined. Moreover, features described with respect to certain configurations may be combined in various other configurations, as different aspects and elements of the configurations may be combined in a similar manner. Further, elements therein may be updated as technology evolves, i.e., many elements are examples and do not limit the scope of the disclosure or claims.

Specific details are given in the description to provide a thorough understanding of the exemplary configurations including implementations. However, configurations may be practiced without these specific details, for example, well-known circuits, processes, algorithms, structures, and techniques have been shown without unnecessary detail in order to avoid obscuring the configurations. This description provides example configurations only, and does not limit the scope, applicability, or configuration of the claims. Rather, the foregoing description of the configurations will provide those skilled in the art with an enabling description for implementing the described techniques. Various changes may be made in the function and arrangement of elements without departing from the spirit or scope of the disclosure.

In conclusion, it is intended that the foregoing detailed description be regarded as illustrative rather than limiting, and that it be understood that these examples are illustrative only and are not intended to limit the scope of the invention. After reading the description of the invention, the skilled person can make various changes or modifications to the invention, and these equivalent changes and modifications also fall into the scope of the invention defined by the claims.