阅读说明：本技术 一种大尺寸太阳能级硅片金刚线切割用冷却液 (Cooling liquid for large-size solar-grade silicon wafer diamond wire cutting ) 是由 王嘉 王艺澄 刘传君 于 2021-08-19 设计创作，主要内容包括：本发明涉及一种大尺寸太阳能级硅片金刚线切割用冷却液,该冷却剂包括按质量分数计的组分：硅粉表面改性剂50%-75%,润滑剂8%-12%,稳定剂5%-20%,余量为去离子水。将去离子水加入反应釜中；开启搅拌,在室温环境中,依次加入硅粉表面改性剂、润滑剂、硅粉活性抑制剂和稳定剂,搅拌2-4小时,使其溶解完全；停止搅拌,进行陈化2小时至3小时,得大尺寸太阳能级硅片金刚线切割用冷却液。本发明具有极佳硅粉分散能力、优秀的润湿性能、出色的极压润滑性能、极强的冷却液带热性能、优异的泡沫控制性能,可以满足大尺寸硅片切割的工艺性能要求。(The invention relates to a cooling liquid for cutting a diamond wire of a large-size solar-grade silicon wafer, which comprises the following components in parts by mass: 50-75% of silicon powder surface modifier, 8-12% of lubricant, 5-20% of stabilizer and the balance of deionized water. Adding deionized water into a reaction kettle; starting stirring, sequentially adding the silicon powder surface modifier, the lubricant, the silicon powder activity inhibitor and the stabilizer in a room temperature environment, and stirring for 2-4 hours to completely dissolve the silicon powder surface modifier, the lubricant, the silicon powder activity inhibitor and the stabilizer; stopping stirring, and aging for 2 to 3 hours to obtain the cooling liquid for cutting the diamond wire of the large-size solar-grade silicon wafer. The silicon powder cutting fluid has excellent silicon powder dispersing capacity, excellent wetting performance, excellent extreme pressure lubricating performance, extremely strong cooling fluid heat carrying performance and excellent foam control performance, and can meet the technological performance requirements of large-size silicon wafer cutting.)

1. The cooling liquid for cutting the diamond wire of the large-size solar-grade silicon wafer is characterized by comprising the following components in parts by mass: 50-75% of silicon powder surface modifier, 8-12% of lubricant, 5-20% of stabilizer and the balance of deionized water.

2. The cooling liquid for cutting the diamond wire of the large-size solar-grade silicon wafer according to claim 1, wherein the silicon powder surface modifier is fatty alcohol branched polyether, fatty alcohol trihydric alcohol is used as starting alcohol, ethylene oxide propylene oxide block polyether is carried out, and then butylene oxide is used for blocking, and the structure is as follows:

wherein R ═ C_nH_2n+1(n＝4～12)，10≤a+b+c≤40，5≤x+y+z≤20。

3. The cooling liquid for cutting the diamond wire of the large-size solar-grade silicon wafer according to claim 1, wherein the lubricant is trans-block polyether diester of ethylene oxide and butylene oxide, and the structure is as follows:

wherein R is₁＝C_nH_2n+1(n＝6～12)，20≤u+v+w≤50。

4. The cooling liquid for cutting the diamond wire of the large-size solar grade silicon wafer according to the claim 1, wherein the stabilizer is one or more of pentanediol, diacetone alcohol, dipropylene glycol monobutyl ether, or tripropylene glycol monobutyl ether.

Technical Field

The invention relates to the technical field of cutting and cooling, in particular to cooling liquid for cutting a diamond wire of a large-size solar-grade silicon wafer.

Background

The PERC technology development brought by the large silicon wafer and how the HJT technology breaks through are the problems which are deeply concerned by photovoltaic enterprises in 2020. It can be said that large-size silicon wafers (210mm size and 182mm size) bring a shock and difficult choice to the photovoltaic industry, and the photovoltaic enterprise strictly considers and selects a road to be taken by the photovoltaic enterprise. What are new specifications for cells, modules, and associated materials and equipment for silicon wafers of different sizes? Which size is more desirable for the market? Which size is the future mainstream and direction? Meanwhile, with the development of HJT technology, major battery enterprises use HJT as a research and storage technology, and mass production of HJT battery modules requires further technological breakthrough.

The large size of the cut is also a significant challenge for the cut ends. In the face of the fact that the content of silicon powder produced by a large-size silicon wafer is increased by more than 30%, the liquid carrying stroke of a diamond wire is increased by more than 15%, the fact that the concentration of the silicon powder is greatly increased in the cutting process is meant, the cutting abrasion degree of a steel wire is increased, the technology popularization speed of the thinning of the diamond wire and the thickness of a silicon wafer is increased, the requirement on the performance of an auxiliary material in the cutting process is higher and higher, the diamond wire cutting cooling liquid is used as an important silicon wafer cutting auxiliary material, the effect of suspending and dispersing the silicon powder in the cutting process, the abrasion in the diamond wire cutting process is reduced, the extreme pressure lubrication performance is provided, the cutting interface is wetted and penetrated, and the heat generated by cutting is brought out. In the face of the existing harsher cutting process environment, the requirements on the performances of the diamond wire cutting cooling liquid such as wetting, dispersion, lubrication, cooling liquid and the like are higher and higher, the existing diamond wire cutting cooling liquid suitable for 166mm silicon wafers cannot meet the requirements of 182mm and 210mm silicon wafers, and the problems of high wire breakage rate, dirty silicon wafer surfaces, high rod lifting torque, steel wire scratches on the silicon wafer surfaces and the like in the cutting process of the large silicon wafers become stumbles which restrict the productivity of the large silicon wafers and the optimization and promotion of the process. Therefore, the diamond wire cutting cooling liquid for the large-size solar-grade silicon wafer needs to be improved in performance and matched with the process development requirements of the existing industry.

Disclosure of Invention

Aiming at the defects of the prior art, the invention provides the cooling liquid for cutting the diamond wire of the large-size solar-grade silicon wafer, which has excellent silicon powder dispersing capacity, excellent wetting property, excellent extreme pressure lubricating property, extremely strong cooling liquid band heat property and excellent foam control property, and particularly can meet the technical performance requirement of cutting the large-size silicon wafer.

The cooling liquid for cutting the diamond wire of the large-size solar-grade silicon wafer comprises the following components in parts by mass: 50-75% of silicon powder surface modifier, 8-12% of lubricant, 5-20% of stabilizer and the balance of deionized water.

The improvement is that the silicon powder surface modifier is fatty alcohol branched polyether, fatty alcohol trihydric alcohol is used as starting alcohol, ethylene oxide propylene oxide block polyether is carried out, and then butylene oxide is used for blocking. The structure is as follows:

wherein R ═ C_nH_2n+1(n＝4～12)，10≤a+b+c≤40，5≤x+y+z≤20。

The improved lubricating agent is trans-block polyether diester of ethylene oxide and butylene oxide, and the structure is as follows:

wherein R is₁＝C_nH_2n+1(n＝6～12)，20≤u+v+w≤50。

The stabilizer is one or a mixture of more of pentanediol, diacetone alcohol, dipropylene glycol monobutyl ether or tripropylene glycol monobutyl ether.

Specifically, the preparation method of the cooling liquid for cutting the diamond wire of the large-size solar-grade silicon wafer comprises the following steps:

1) adding deionized water into a reaction kettle; 2) starting stirring, sequentially adding the silicon powder surface modifier, the lubricant, the silicon powder activity inhibitor and the stabilizer in a room temperature environment, and stirring for 2-4 hours to completely dissolve the silicon powder surface modifier, the lubricant, the silicon powder activity inhibitor and the stabilizer; 3) stopping stirring, and aging for 2 to 3 hours to obtain the cooling liquid for cutting the diamond wire of the large-size solar-grade silicon wafer.

Has the advantages that:

compared with the prior art, the cooling liquid for cutting the diamond wire of the large-size solar-grade silicon wafer improves the yield of the diamond wire by more than 2 percent, and reduces the wire breakage rate by 1 percent. The concrete advantages are as follows:

1) in the face of the increased silicon powder concentration of the large-size silicon wafer, the product has excellent silicon powder dispersing capacity, ensures no silicon powder agglomeration and large-area adhesion on the surface of the silicon wafer, and can effectively relieve the cleaning pressure of a cleaning process;

2) the cutting fluid has excellent protection performance on steel wires, can form a lubricating film layer in the cutting process, reduces cutting resistance, reduces wire bows generated in the cutting process, and reduces the wire breakage rate of the diamond wires;

3) the silicon powder, the diamond wire and the silicon wafer surface generated by cutting can be quickly wetted in the cutting process, and the heat generated by cutting can be quickly taken out;

4) excellent foam control properties;

5) compared with the prior art, the invention discloses cooling liquid for cutting diamond wires of large-size solar grade silicon wafers and a preparation method thereof, and the solar grade 182mm silicon wafers produced by using the cooling liquid can be stabilized to be more than 92%. The solar grade silicon wafer with the size of 210mm can be stabilized at more than 90%.

Detailed Description

Example 1

The cooling liquid for cutting the diamond wire of the large-size solar-grade silicon wafer comprises the following components in parts by mass:

55 percent of silicon powder surface modifier

The structure is as follows:

wherein R ═ C₈H₁₇，a+b+c＝24，a＝b＝c＝8，x+y+z＝9，x＝y＝z＝3。

8.5 percent of lubricant

The structure is as follows:

wherein R is₁＝C₆H₁₃，u+v+w＝40，u＝w＝6，v＝28。

Pentanediol content 10%

Balance of deionized water

The preparation method comprises the following steps:

1) adding deionized water into a reaction kettle; 2) starting stirring, sequentially adding the silicon powder surface modifier, the lubricant, the silicon powder activity inhibitor and the stabilizer in a room temperature environment, and stirring for 2 hours to completely dissolve the silicon powder surface modifier, the lubricant, the silicon powder activity inhibitor and the stabilizer; 3) stopping stirring, and aging for 2 hours.

Example 2

The cooling liquid for cutting the diamond wire of the large-size solar-grade silicon wafer comprises the following components in parts by mass:

60 percent of silicon powder surface modifier

The structure is as follows:

wherein R ═ C₆H₁₃，a+b+c＝24，a＝b＝c＝8,x+y+z＝18,x＝y＝z＝6。

10 percent of lubricant

The structure is as follows:

wherein R is₁＝C₁₀H₂₁，u+v+w＝30,u＝w＝8,v＝14。

Dipropylene glycol monobutyl ether 12%

The balance of deionized water.

The preparation method is the same as example 1.

Example 3

The cooling liquid for cutting the diamond wire of the large-size solar-grade silicon wafer comprises the following components in parts by mass: 72 percent of silicon powder surface modifier

The structure is as follows:

wherein R ═ C₁₀H₂₁，a+b+c＝15,a＝b＝c＝5，x+y+z＝15,x＝y＝z＝5。

8 percent of lubricant

The structure is as follows:

wherein R is₁＝C₈H₁₇，u+v+w＝25,u＝w＝4，v＝17。

Diacetone alcohol 8%

Balance of deionized water

The preparation method is the same as example 1.

Example 4

The cooling liquid for cutting the diamond wire of the large-size solar-grade silicon wafer comprises the following components in parts by mass:

65 percent of silicon powder surface modifier

The structure is as follows:

wherein R ═ C₆H₁₃，a+b+c＝36，a＝b＝c＝12,x+y+z＝15,x＝y＝z＝5。

Lubricant 11%

The structure is as follows:

wherein R is₁＝C₁₀H₂₁，u+v+w＝40，u＝w＝7，v＝26。

Tripropylene glycol monobutyl ether 10 percent as stabilizer

The balance of deionized water.

The preparation method is the same as example 1.

The technical means and detection methods which are not disclosed in the above embodiments are conventional and do not need to be specifically described. The used commercially available cooling liquid is 182 series, and the brand is Yitian.

From the data, the invention discloses the cooling liquid for cutting the diamond wire of the large-size solar grade silicon wafer and the preparation method thereof, and the solar grade 182mm silicon wafer produced by using the cooling liquid can be stabilized to be more than 92%. The solar grade 210mm silicon wafer can be stabilized at more than 90%

The above description is only a preferred embodiment of the present invention, and the scope of the present invention is not limited thereto, and any simple modifications or equivalent substitutions of the technical solutions that can be obviously obtained by those skilled in the art within the technical scope of the present invention are within the scope of the present invention.