阅读说明：本技术 一种双极化太赫兹硅基喇叭天线阵列 (Dual-polarization terahertz silicon-based horn antenna array ) 是由 林先其 姚尧 秦涛 刘皓中 苏一洪 刘铮 胥鑫 张文博 于 2021-08-13 设计创作，主要内容包括：本发明提供了一种双极化太赫兹硅基喇叭天线阵列,由若干刻蚀硅基片堆叠组成,堆叠的所述刻蚀硅基片形成四个喇叭天线单元,包括第一喇叭天线单元、第二喇叭天线单元、第三喇叭天线单元和第四喇叭天线单元,四个所述喇叭天线单元以刻蚀硅基片的中心点为参考点旋转对称排列。(The invention provides a dual-polarization terahertz silicon-based horn antenna array which is formed by stacking a plurality of etched silicon substrates, wherein the stacked etched silicon substrates form four horn antenna units, the four horn antenna units comprise a first horn antenna unit, a second horn antenna unit, a third horn antenna unit and a fourth horn antenna unit, and the four horn antenna units are rotationally and symmetrically arranged by taking the central point of the etched silicon substrate as a reference point.)

1. A dual-polarization terahertz silicon-based horn antenna array is characterized in that: the etching silicon substrates (1) are stacked to form four horn antenna units, including a first horn antenna unit (2), a second horn antenna unit (3), a third horn antenna unit (4) and a fourth horn antenna unit (5), and the horn antenna units are arranged in a rotational symmetry mode by taking the central point of the etching silicon substrates (1) as a reference point.

2. The dual-polarized terahertz silicon-based feedhorn array of claim 1, wherein: the horn antenna unit comprises a feed matching cavity, a polarization isolation cavity, a four-ridge transmission cavity and a radiation port along the stacking direction of the etched silicon substrate (1).

3. The dual-polarized terahertz silicon-based feedhorn array of claim 2, wherein: the feed matching cavity is formed by stacking a layer of first etching silicon substrate (6) and a plurality of layers of second etching silicon substrates (7), and the second etching silicon substrates (7) are stacked to form a step-shaped gradient structure.

4. The dual-polarized terahertz silicon-based feedhorn array of claim 3, wherein: the polarization isolation cavity is formed by stacking a layer of second etching silicon substrate (7) and a plurality of layers of third etching silicon substrates (8), and the second etching silicon substrate (7) of the polarization isolation cavity is close to the second etching silicon substrate (7) of the feed matching cavity.

5. The dual-polarized terahertz silicon-based feedhorn array of claim 4, wherein: the four-ridge transmission cavity is formed by stacking a plurality of layers of third etching silicon substrates, and the third etching silicon substrates (8) are stacked to form four rectangular ridge-shaped protrusions.

6. The dual-polarized terahertz silicon-based feedhorn array of claim 2, wherein: the radiation port comprises two layers of fourth etching silicon substrates (9) provided with square etching areas and two layers of fifth etching silicon substrates (10) provided with square etching areas and provided with rectangular ridge-shaped protrusions.

7. The dual-polarized terahertz silicon-based feedhorn array of claim 3, wherein: the second etching silicon substrate (7) is provided with three layers.

8. The dual-polarized terahertz silicon-based feedhorn array of claim 4, wherein: and two layers of third etching silicon substrates (8) of the polarization isolation cavity are arranged.

9. The array of dual-polarized terahertz silicon-based feedhorns of claim 5, wherein: and the third etching silicon substrate (8) of the four-ridge transmission cavity is provided with four layers.

Technical Field

The invention relates to the technical field of millimeter wave terahertz antennas, in particular to a dual-polarization terahertz silicon-based horn antenna array.

Background

An antenna array is an electromagnetic wave radiation system formed by arranging a plurality of antenna elements in a specific manner, which often includes a plurality of electromagnetic wave feed ports and has good directional radiation capability. With the rapid development of modern communication and radar systems, the traditional single-polarization antenna array is difficult to meet the requirement of the radar communication system for broadband duplex communication, and in order to realize high directional radiation performance and high-isolation duplex communication at the present stage, a set of complex feed network is often required to be designed and a special duplex device is used to support the high-isolation transceiving function of the antenna array. This makes the traditional antenna system have the shortcoming of design, processing cost height, integrated level low.

Disclosure of Invention

Aiming at the defects in the prior art, the invention provides a dual-polarization terahertz silicon-based horn antenna array, which solves the problems of high design and processing cost and low integration level of the traditional antenna system in the prior art.

The technical purpose of the invention is realized by the following technical scheme:

the utility model provides a double polarization terahertz silicon-based horn antenna array, piles up by a plurality of sculpture silicon substrates and forms, piles up sculpture silicon substrate forms four horn antenna unit, including first horn antenna unit, second horn antenna unit, third horn antenna unit and fourth horn antenna unit, four horn antenna unit uses the central point of sculpture silicon substrate as reference point rotational symmetry and arranges.

The invention is further configured to: the horn antenna unit comprises a feed matching cavity, a polarization isolation cavity, a four-ridge transmission cavity and a radiation port along the stacking direction of the etched silicon substrate.

The invention is further configured to: the feed matching cavity is formed by stacking one layer of first etching silicon substrate and a plurality of layers of second etching silicon substrates, and the second etching silicon substrates are stacked to form a step-shaped gradient structure.

The invention is further configured to: the polarization isolation cavity is formed by stacking a layer of second etching silicon substrate and a plurality of layers of third etching silicon substrates, and the second etching silicon substrate of the polarization isolation cavity is close to the second etching silicon substrate of the feed matching cavity.

The invention is further configured to: the four-ridge transmission cavity is formed by stacking a plurality of layers of third etching silicon substrates, and the third etching silicon substrates are stacked to form four rectangular ridge-shaped protrusions.

The invention is further configured to: the radiation port comprises two layers of fourth etching silicon substrates provided with square etching areas and two layers of fifth etching silicon substrates provided with square etching areas, wherein rectangular ridge-shaped protrusions are arranged in the square etching areas.

The invention is further configured to: the second etching silicon substrate is provided with three layers.

The invention is further configured to: and two layers of third etching silicon substrates of the polarization isolation cavity are arranged.

The invention is further configured to: and the third etching silicon substrate of the four-ridge transmission cavity is provided with four layers.

Compared with the prior art, the invention has the following advantages and beneficial effects:

the horn antenna units adopted by the invention are all realized by adopting an etching silicon substrate stacking process, and the horn antenna unit has the advantages of simple design, miniaturization, low profile, easy integration and the like.

The horn antenna units adopted by the invention have dual-polarization radiation characteristics, and support terahertz duplex communication by simultaneously receiving and transmitting electromagnetic waves in two different polarization directions, so that the horn antenna units are wide in application occasions.

The invention can keep stable working performance under different environments and can realize large-scale mass production by etching and stacking on the same silicon wafer in large scale.

Drawings

FIG. 1 is a schematic structural diagram of an embodiment of the present invention;

fig. 2 is a schematic view of a split structure according to an embodiment of the present invention.

In the above drawings: 1. etching a silicon substrate; 2. a first horn antenna unit; 3. a second horn antenna unit; 4. a third horn antenna unit; 5. a fourth horn antenna unit; 6. first etching the silicon substrate; 7. second etching the silicon substrate; 8. third etching the silicon substrate; 9. fourth etching the silicon substrate; 10. and fifthly, etching the silicon substrate.

Detailed Description

The technical solution of the present invention is further explained with reference to the drawings and the embodiments.

Example (b):

as shown in fig. 1 and 2, the dual-polarized terahertz silicon-based horn antenna array is formed by stacking etched silicon substrates 1, the stacked etched silicon substrates 1 form four horn antenna units, the four horn antenna units include a first horn antenna unit 2, a second horn antenna unit 3, a third horn antenna unit 4 and a fourth horn antenna unit 5, and the four horn antenna units are rotationally and symmetrically arranged by taking a central point of the etched silicon substrate 1 as a reference point. Wherein, the length of the frame of the etching silicon substrate 1 is 20mm, the width is 20mm, and the height is 0.25 mm. The etching silicon substrate 1 includes a first etching silicon substrate 6, a second etching silicon substrate 7, a third etching silicon substrate 8, a fourth etching silicon substrate 9, and a fifth etching silicon substrate 10.

The feed matching cavity is formed by stacking one layer of first etching silicon substrate 6 and three layers of second etching silicon substrates 7, the second etching silicon substrates 7 are stacked to form a step-shaped gradient structure, the gradient width of the step-shaped gradient structure is 0.58mm, and the gradient step length of the step-shaped gradient structure is 0.8 mm;

the polarization isolation cavity is formed by stacking a layer of second etching silicon substrate 7 and two layers of third etching silicon substrates 8, and the second etching silicon substrate 7 of the polarization isolation cavity is close to the second etching silicon substrate 7 of the feed matching cavity. The length of the outer edge of the cavity is 1mm, the width is 1mm, and the height is 0.75 mm; a second etched silicon substrate 7 is arranged on the polarization isolation cavity and can play a transition role with the feed matching cavity.

The four-ridge transfer cavity is formed by stacking four layers of third etched silicon substrates, and the third etched silicon substrates 8 are stacked to form four rectangular ridge-shaped protrusions.

The radiation port comprises two layers of fourth etching silicon substrates 9 provided with square etching areas and two layers of fifth etching silicon substrates 10 provided with square etching areas, rectangular ridge-shaped protrusions are arranged in the square etching areas, and the length and the width of each square etching area are 1mm and 1mm respectively. The horn antenna unit is realized by adopting the etching silicon substrate 1 stacking process, and has the advantages of simple design, miniaturization, low profile, easy integration and the like.

Finally, the above embodiments are only for illustrating the technical solutions of the present invention and not for limiting, although the present invention has been described in detail with reference to the preferred embodiments, it should be understood by those skilled in the art that modifications or equivalent substitutions may be made to the technical solutions of the present invention without departing from the spirit and scope of the technical solutions of the present invention, and all of them should be covered in the claims of the present invention.