阅读说明：本技术 电子束偏转装置、扫描电子显微镜以及电子束曝光机 (Electron beam deflection device, scanning electron microscope, and electron beam exposure machine ) 是由 贾雪峰 于 2021-08-20 设计创作，主要内容包括：本申请提供了一种电子束偏转装置、扫描电子显微镜以及电子束曝光机,所述电子束偏转装置包括：壳体,具有电子束的入射端和出射端,所述入射端和所述出射端限定了所述电子束的传输通道；偏转组件,位于在所述壳体内,且围绕所述传输通道设置；电子束通过孔,位于所述入射端,且与所述传输通道连通,用于限定进入所述传输通道的电子束的尺寸。本申请提出的电子束偏转装置,可以减少偏轴电子对电子束束斑尺寸的影响。(The application provides an electron beam deflection device, a scanning electron microscope and an electron beam exposure machine, the electron beam deflection device includes: a housing having an incident end and an exit end of an electron beam, the incident end and the exit end defining a transmission channel of the electron beam; a deflection assembly positioned within the housing and disposed about the transmission channel; and the electron beam passing hole is positioned at the incident end and communicated with the transmission channel and used for limiting the size of the electron beam entering the transmission channel. The electron beam deflection device can reduce the influence of off-axis electrons on the size of an electron beam spot.)

1. An electron beam deflection device, comprising:

a housing having an incident end and an exit end of an electron beam, the incident end and the exit end defining a transmission channel of the electron beam;

a deflection assembly positioned within the housing and disposed about the transmission channel;

and the electron beam passing hole is positioned at the incident end and communicated with the transmission channel and used for limiting the size of the electron beam entering the transmission channel.

2. The deflection apparatus according to claim 1, wherein the diameter d of the electron beam passage hole satisfies 0.1 mm. ltoreq. d.ltoreq.1 mm.

3. The deflector device of claim 1, wherein the housing comprises:

and the adjusting ring is positioned at the incident end, and the electron beam through hole is positioned on the adjusting ring.

4. The deflector of claim 3, wherein the adjustment ring is removably attached to the body of the housing.

5. The deflector device of claim 1, wherein the housing comprises:

and the pole shoe cap is positioned at the emergent end and is used for being connected with the pole shoe, the pole shoe cap comprises a matching inclined surface, and the matching inclined surface has an inclined angle matched with the pole shoe.

6. The deflection device of claim 1, wherein the deflection assembly comprises a plurality of deflection electrodes, a first deflection electrode being any one of the plurality of deflection electrodes, the deflection device further comprising:

and an insulator fixing part between the first deflection electrode and the housing, the first deflection electrode being fixed to an inner surface of the housing through the insulator fixing part.

7. The deflection apparatus of claim 6, wherein the insulator securing portion comprises first and second opposing surfaces, each of the first and second surfaces being arcuate, the first surface being in contact with the housing, the second surface being in contact with the first deflection electrode;

wherein a curvature of the first surface is identical to a curvature of an inner surface of the case, the first deflection electrode has a third surface contacting the insulator fixing part, and a curvature of the second surface is identical to a curvature of the third surface.

8. The deflection device of claim 6, wherein the first deflection electrode comprises third and fourth opposing surfaces, the third surface in contact with the insulator fixture, the third and fourth surfaces each being arcuate, the third surface having an angle less than the fourth surface.

9. A scanning electron microscope comprising the electron beam deflection device according to any one of claims 1 to 8.

10. An electron beam exposure machine comprising the electron beam deflection device according to any one of claims 1 to 8.

Technical Field

The application relates to the technical field of electron beam devices, in particular to an electron beam deflection device, a scanning electron microscope and an electron beam exposure machine.

Background

The electron beam deflection device is used for realizing deflection of the electron beam. Electron beam deflection apparatuses are widely used in scanning electron microscopes and electron beam exposure machines. When off-axis electrons exist in an electron beam incident on the electron beam deflection device, the deflection of the electron beam by the electron beam deflection device increases the size of a beam spot of the emitted electron beam, and thus the resolution of equipment such as a scanning electron microscope or an electron beam exposure machine having the electron beam deflection device is reduced.

Disclosure of Invention

In view of the above, the present application provides an electron beam deflection apparatus, a scanning electron microscope and an electron beam exposure apparatus, which can reduce the influence of off-axis electrons on the size of an electron beam spot.

In a first aspect, the present application provides an electron beam deflection device comprising: a housing having an incident end and an exit end of an electron beam, the incident end and the exit end defining a transmission channel of the electron beam; a deflection assembly positioned within the housing and disposed about the transmission channel; and the electron beam passing hole is positioned at the incident end and communicated with the transmission channel and used for limiting the size of the electron beam entering the transmission channel.

In one embodiment, the diameter d of the electron beam passage hole satisfies 0.1mm < d < 1 mm.

In one embodiment, the housing includes: and the adjusting ring is positioned at the incident end, and the electron beam through hole is positioned on the adjusting ring.

In one embodiment, the adjustment collar is removably attached to the body of the housing.

In one embodiment, the housing includes: and the pole shoe cap is positioned at the emergent end and is used for being connected with the pole shoe, the pole shoe cap comprises a matching inclined surface, and the matching inclined surface has an inclined angle matched with the pole shoe.

In one embodiment, the deflection assembly includes a plurality of deflection electrodes, the first deflection electrode is any one of the plurality of deflection electrodes, and the deflection device further includes: and an insulator fixing part between the first deflection electrode and the housing, the first deflection electrode being fixed to an inner surface of the housing through the insulator fixing part.

In one embodiment, the insulator fixing portion includes a first surface and a second surface opposite to each other, the first surface and the second surface are both arc surfaces, the first surface is in contact with the housing, and the second surface is in contact with the first deflection electrode; wherein a curvature of the first surface is identical to a curvature of an inner surface of the case, the first deflection electrode has a third surface contacting the insulator fixing part, and a curvature of the second surface is identical to a curvature of the third surface.

In one embodiment, the first deflection electrode includes a third surface and a fourth surface opposite to each other, the third surface is in contact with the insulator fixing portion, the third surface and the fourth surface are both arc surfaces, and an angle of the third surface is smaller than an angle of the fourth surface.

In a second aspect, the present application provides a scanning electron microscope comprising the electron beam deflection device of the first aspect.

In a third aspect, the present application provides an electron beam exposure machine comprising the electron beam deflection device of the first aspect.

This application sets up electron beam through hole on electron beam deflection device's casing, and this electron beam through hole can filter off-axis electron, makes off-axis electron can't get into electron beam deflection device. Therefore, the electron beam deflection device can avoid the increase of the beam spot size of the emergent electron beam caused by the entry of the off-axis electrons into the electron beam deflection device, thereby improving the resolution of the equipment provided with the electron beam deflection device.

Drawings

Fig. 1 is an exemplary view of a scanning electron microscope.

Fig. 2 is a schematic view of an electron beam deflection apparatus according to an embodiment of the present disclosure.

Fig. 3 is a plan view of the electron beam deflection apparatus shown in fig. 2.

Fig. 4 is a schematic diagram of a pole piece cap provided in an embodiment of the present application.

Fig. 5 is an internal schematic view of the electron beam deflection apparatus shown in fig. 2.

Fig. 6 is a schematic distribution diagram of a multi-deflection electrode according to an embodiment of the present application.

Fig. 7 is a top view of an insulator fixing portion according to an embodiment of the present disclosure.

Fig. 8 is a top view of a first deflection electrode according to an embodiment of the present disclosure.

Fig. 9 is a potential equipotential line diagram of an electron beam deflection apparatus.

Fig. 10 is a potential equipotential line schematic diagram of the electron beam deflection apparatus shown in fig. 2.

Fig. 11 is a perspective view of the first deflection electrode shown in fig. 8.

Detailed Description

The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings of the embodiments of the present application, and it is obvious that the described embodiments are only a part of the embodiments of the present application, and not all of the embodiments.

The electron beam deflection device is used for realizing deflection of the electron beam. Electron beam deflection apparatuses are widely used in scanning electron microscopes and electron beam exposure machines.

The electron beam deflection apparatus will be described below by taking a scanning electron microscope as an example.

Scanning electron microscopes are electron optical instruments and play an important role in the fields of materials, biology, physics, chemistry, and the like. The principle of the scanning electron microscope is that a focused electron beam is used for scanning line by line on the surface of a sample; the electron beam bombards the surface of the sample to generate secondary electrons or back scattering electrons; collecting secondary electrons or back scattered electrons generated on the surface of the sample, and expressing the scanning position of the electron beam on the surface of the sample and the quantity of the generated secondary electrons or back scattered electrons in a two-dimensional image form to obtain a secondary electron image or back scattered electron image of the scanning electron microscope.

Fig. 1 is a schematic diagram of a scanning electron microscope 100. The scanning electron microscope 100 may include: an electron source 101, a condenser lens 102, an aperture stop 103, an astigmatic lens 104, an objective lens 105, and an electron beam deflection device 106.

The electron source 101 generates an electron beam E. The electron source 101 may comprise any type of electron source. For example, the electron source 101 may include a tungsten filament gun system or a field emission gun system, or the like. The electron beam E is accelerated and then converged by the condenser lens 102. The condenser lens 102 can condense the electron beam E and can adjust the beam current of the electron beam E. The electron beam E continues through the aperture stop 103 and the stigmator 104. Next, the electron beam deflection device 106 deflects and scans the electron beam E. The deflected electron beam E is converged by the objective lens 105 and reaches the sample.

An electron beam exposure machine is core equipment for high-precision micro-nano processing and chip manufacturing. The electron beam exposure machine performs direct write exposure using a focused electron beam by using an electron beam deflection device, thereby obtaining a patterned structure on a wafer. Like the scanning electron microscope, the electron beam exposure apparatus also includes an electron source, an electron beam deflection device, an objective lens, and the like, and will not be described in detail below.

For devices such as scanning electron microscopes or electron beam exposure machines, the beam spot size of the electron beam affects the resolution of these devices. If the beam spot size is increased, the resolution of the scanning electron microscope or the electron beam exposure machine is lowered.

When off-axis electrons (or stray electrons, scattered electrons, etc.) exist in an electron beam incident on the electron beam deflection device, the beam spot size is affected by the deflection scanning of the electron beam by the electron beam deflection device. Specifically, electrons (paraxial electrons) in the electron beam main beam can be deflected in a desired path by the electron beam deflection device, but the off-axis electrons in the electron beam cannot be deflected in the desired path. This results in an increase in the size of the beam spot of the outgoing electron beam, which leads to a decrease in the resolution of the scanning electron microscope or electron beam exposure machine.

The application provides an electron beam deflection device which can reduce the influence of off-axis electrons on the size of an electron beam spot.

Fig. 2-3 illustrate an electron beam deflection apparatus 200 according to an embodiment of the present invention. Fig. 2 is a perspective view of the electron beam deflection device 200, and fig. 3 is a top view of the electron beam deflection device 200.

The electron beam deflection device 200 includes a housing 210. The housing 210 has an incident end and an exit end of the electron beam, which define a transmission passage of the electron beam. After the electron beam is incident on the electron beam deflection device 200 from the incident end, deflection scanning can be performed in the transmission path of the electron beam. Taking the electron beam deflection device 200 shown in fig. 2 as an example, the transmission direction of the electron beam E may be the direction shown by the arrow in the figure, i.e. the top of the electron beam deflection device 200 is an incident end, and the lower part of the electron beam deflection device 200 is an exit end.

The present application is not limited to a specific shape of the housing 210, and may be, for example, a hollow cylinder shape as shown in fig. 2.

The electron beam passing hole 211 is located at the incident end, the electron beam passing hole communicates with the transmission passage as shown in fig. 1, the electron beam passing hole 211 is located at the electron beam incident end at the top of the housing 210, and the top view shown in fig. 2 can more clearly show that the electron beam passing hole 211 is located at the incident end.

The electron beam passing hole 211 serves to define the size of the electron beam entering the electron beam delivery passage. The size of the electron beam passing hole 211 can be adjusted so that most of the electrons in the electron beam entering the electron beam transmission passage are paraxial electrons. Thus, the electron beam passing hole 211 allows paraxial electrons to enter the transmission passage of the electron beam deflection unit 200. Off-axis electrons can then be filtered out by the housing around the electron beam passing hole 211 so that as few off-axis electrons as possible enter the electron beam deflection device 200.

This application sets up electron beam through hole through the casing incident end at electron beam deflection device, can filter off-axis electron, makes off-axis electron can't get into electron beam deflection device. This prevents an increase in the size of the spot of the outgoing electron beam caused by off-axis electrons entering the electron beam deflection means, thereby improving the resolution of the apparatus in which the electron beam deflection means is installed.

The present application does not limit the size of the diameter d of the electron beam passing hole 211. On the one hand, if d is too large, more off-axis electrons pass through the electron beam passing hole, thereby causing the electron beam deflection apparatus to fail to effectively filter off-axis electrons. On the other hand, if d is too small, there are cases where more paraxial electrons of the electron beam main beam cannot pass through the electron beam passage hole, resulting in failure of the electron beam to efficiently enter the electron beam deflection means. Optionally, the application proposes that the diameter d of the electron beam passing hole may satisfy 0.1mm ≦ d ≦ 1 mm. Such a dimensioning allows the main beam of the electron beam to enter the electron beam deflection means and also filters off-axis electrons.

Alternatively, as shown in fig. 2, the electron beam passing hole 211 may be located at the center of the incident end of the housing, so that electrons incident to the electron beam deflection device 200 have coaxiality with a deflection assembly in the housing, thereby improving the accuracy of deflecting the electrons by the electron beam deflection device 200.

The housing 210 may be unitary or may include multiple components. The electron beam passage hole 211 may be located at any portion of the housing, which is not limited in the present application. For example, as shown in fig. 2, the housing 210 may include an adjustment collar 214, the adjustment collar 214 may be located at an electron beam incident end of the housing, and the electron beam passing hole 211 may be located on the adjustment collar 214.

Alternatively, the electron beam deflection device 200 may be adapted to different collars including electron beam passing holes of different diameters. Therefore, the size of the electron beam entering the electron beam propagation passage can be adjusted according to actual needs by adjusting the size of the electron beam passing hole of the electron beam deflection device 200.

It will be appreciated that the adjustment collar 214 may be removably attached to the body of the housing to allow replacement with a different adjustment collar. Different collars may have different sized electron beam passing apertures.

To facilitate replacement of the adjustment collar 214, the adjustment collar 214 may be provided with a grip location 215. The gripping device may be used to remove or install the adjustment collar 214 via the gripping location 215. The structure or the size of the clamping position is not limited by the application, and the clamping position can be selected according to the practical situations such as a clamping device and the like. For example, the gripping locations 215 may be two holes as shown in fig. 2, and the gripping device may be inserted through the two holes to achieve gripping of the adjustment ring 214.

The application proposes that the diameter of the electron beam passing hole can be changed by the adjusting ring. This avoids the need to replace the electron beam deflection apparatus as a whole when changing the diameter of the electron beam passage hole, and improves the flexibility of the apparatus and the convenience of use.

As shown in fig. 2, the housing 210 may further include an end cap 212, a frame 213, or a vent hole 216, in addition to the adjusting ring 214.

End cap 212 is removably attached to the main body portion of housing 210. In operation of the electron beam deflection apparatus 200, the end cap 212 may be coupled to a main portion of the housing 210. The end cap 212 may be removed when it is necessary to replace parts or components inside the electron beam deflection device 200.

The skeleton portion 213 is used to provide a supporting function for components (e.g., deflection components) inside the electron beam deflection apparatus 200.

The vent hole 216 is used to provide a flow path for air. As can be seen from the foregoing, the electron beam deflection device 200 is commonly used in scanning electron microscopes and electron beam exposure machines, which require vacuum environment for operation. Therefore, these devices require that the sample chamber be evacuated before scanning can take place. The vent hole 216 may provide a communication path for air during the evacuation process, thereby improving the efficiency of the evacuation process. Alternatively, the vent hole 216 may be located at the incident end of the housing 210. Taking a scanning electron microscope as an example, the vacuum pumping device is usually located at the lower part of the objective lens of the scanning electron microscope, i.e. below the electron beam deflection device 200. Since the air above the electron beam deflection device 200 is difficult to be drawn out due to the shielding of the electron beam deflection device 200, the air above the electron beam deflection device 200 can be more quickly drawn out through the vent hole 216 by providing the vent hole 216 at the incident end of the housing 210.

In the actual operation of the electron beam deflection device 200, the electron beam deflection device 200 deflects the electron beam, and the electron beam is converged by the objective lens to reach the sample, thereby realizing scanning. The deflection center of the electron beam deflection device 200 and the pole piece (pole piece such as the portion 107 shown in fig. 1) of the objective lens are not on the same axis, which may aggravate the generation of aberration.

To address this issue, the present application proposes that the housing 210 may include a pole piece cap 217. A pole shoe cap 217 is located at the electron beam exit end for connection with the pole shoe. Fig. 4 is a perspective view of a pole piece cap 217, the pole piece cap 217 including a matching bevel 2171, the angle of the bevel angle of the matching bevel 2171 matching the bevel angle of the pole piece to which the electron beam deflection device 200 is connected.

The inclination angle of the matching inclined plane 2171 of the pole shoe cap is matched with that of the inclined plane of the pole shoe, so that the exit end of the electron beam deflection device 200 and the pole shoe can be accurately positioned, the deflection center of the electron beam deflection device 200 and the pole shoe can be conveniently arranged on the same axis, and further, the generation of aberration is avoided.

It will be appreciated that the dimensions of the pole piece cap 217 can be flexibly adjusted to the dimensions of the pole piece to which it is connected.

Alternatively, the pole piece cap 217 may be detachably connected to the main body of the electron beam deflection device 200. Alternatively, the pole piece cap 217 may be removably connected to the body of the housing 210

Alternatively, the pole piece cap 217 may be frustoconical as shown in fig. 4 and the mating ramp 2171 may be an inclined surface of a truncated cone. The pole shoe cap 217 of this construction is simple to machine and matches existing pole shoe shapes.

The external structure of the electron beam deflection apparatus proposed in the present application is explained above with reference to fig. 1 to 4, and the internal structure of the electron beam deflection apparatus will be explained below with reference to fig. 5 to 11.

The interior of the housing may house a deflection assembly for deflection scanning of the electron beam, which may be arranged around a transmission channel of the electron beam within the housing. The different types of electron beam deflection devices correspond to different deflection assemblies, and the application is not limited to the types of electron beam deflection devices nor to the specific types of these assemblies. The type of electron beam deflection means may be, for example, electrostatic deflection, electromagnetic deflection or a combination of electrostatic deflection and electromagnetic deflection. The electron beam deflection device based on electrostatic deflection may include a deflection electrode; the electron beam deflection device based on electromagnetic deflection may comprise a scanning coil; the electron beam deflection means based on a combination of electrostatic deflection and electromagnetic deflection may then comprise both deflection electrodes and scanning coils.

Different types of electron beam deflection devices have different characteristics. For example, in the field of semiconductor inspection and the like, a scanning electron microscope having high resolution and high scanning speed is generally required. Wherein the scanning speed of the scanning electron microscope depends on the deflection speed of the electron beam deflection device. Ordinary electromagnetic deflection usually has a scanning speed of less than 10M/s due to hysteresis effects. Electrostatic deflection can achieve high-speed scanning compared to electromagnetic deflection. Alternatively, the electron beam deflection may be performed by a combination of electrostatic deflection and electromagnetic deflection. In particular, the electromagnetic deflection may be used as a main field, the electrostatic deflection as a sub-field, the sub-field providing a fast scanning function and the main field providing a positioning function. Taking an electron beam exposure machine as an example, in order to realize rapid exposure, the electron beam deflection direct writing exposure can be carried out by using electrostatic deflection or a mode of combining the electrostatic deflection and electromagnetic deflection.

Alternatively, as shown in fig. 5, an electron beam deflection device 200 based on electrostatic deflection will be described as an example. To more intuitively reveal the internal structure of the electron beam deflection device 200, fig. 5 is a top view of the electron beam deflection device 200 with the incident end of the housing removed. The electron beam deflection device 200 includes: a housing 210, a first deflection electrode 220, and an insulator fixing portion 230.

For the description of the housing 210, reference is made to the above description and no further description is made here.

The first deflection electrode 220 is used to generate an electrostatic field, and by controlling the electrostatic field, the deflection of the electron beam in the electrostatic field can be controlled.

In order to achieve a precise control of the electrostatic field inside the electron beam deflection device 200, a plurality of deflection electrodes may be provided, wherein the first deflection electrode 220 is any one of the plurality of deflection electrodes. The present application does not limit the specific number of the plurality of deflection electrodes, for example, the number of the deflection electrodes may be 4, 6, 8 or 12, and the like, and the corresponding electron beam deflection device 200 may implement quadrupole, hexapole, octapole or dodecapole electrostatic deflection.

The present application does not limit the distribution of the plurality of deflection electrodes. Alternatively, in order to maintain uniform distribution of the electric field, a plurality of deflection electrodes may be uniformly distributed along the circumference of the electron beam transmission channel inside the housing 210.

Optionally, multiple sets of deflection electrodes may be disposed inside the housing 210, and each set of deflection electrodes may include multiple deflection electrodes. The multiple sets of deflection electrodes are arranged to deflect the electron beam back to the center of the objective lens to reduce aberrations and distortions of the electron beam. For example, an upper deflection electrode and a lower deflection electrode can be arranged, wherein the electron beam trajectory is deflected to one direction through the upper deflection electrode, then deflected to the opposite direction through the lower deflection electrode, and passes through the objective lens convergence center, so that smaller distortion and aberration are kept.

Taking the electron beam deflection apparatus 200 shown in fig. 5 as an example, the electron beam deflection apparatus 200 includes two sets of upper and lower deflection electrodes, each set of deflection electrodes includes 8 deflection electrodes, that is, the electron beam deflection apparatus is an eight-stage electrostatic deflection apparatus. The distribution of the 8 deflection electrodes in the housing is shown in fig. 5. The 8 deflection electrodes shown in fig. 5 are indicated by A, B, C, D, E, F, G and H, and fig. 6 shows the positions of the deflection electrodes corresponding to A, B, C, D, E, F, G and H.

TABLE 1

When the deflection electrodes are used for x-direction, y-direction scanning as shown in fig. 6, voltages are applied to the upper and lower octupole electrostatic deflection plates as shown in table 1. Where Vx represents the voltage applied in the x-direction and Vy represents the voltage applied in the y-direction.

The first deflection electrode 220 may be fixed to the inner surface of the case 210 by an insulator fixing portion 230.

The present application does not limit the specific structure of the insulator fixing portion 230. Alternatively, the insulator fixing part 230 may have a structure as shown in fig. 7. Fig. 7 is a plan view of the insulator fixing portion 230. The insulator fixing part 230 includes opposite first and second surfaces 231 and 232. The first surface 231 and the second surface 232 may each be a curved surface. Wherein the first surface 231 may be in contact with or fixed to an inner surface of the case 210, and the second surface 232 may be in contact with or fixed to the first deflection electrode 220. The curvature of the first surface 231 is identical to the curvature of the inner surface of the case in contact with the first surface, and the curvature of the second surface 232 is identical to the curvature of the surface of the first deflection electrode 220 in contact with the insulator fixing portion 230. As can be seen from fig. 5, the insulator fixing portion 230 has such a structure that the plurality of deflection electrodes have coaxiality within the housing, thereby preventing an abnormal electric field distribution caused by the misalignment of the plurality of deflection electrodes.

The present application does not limit the specific structure of the first deflection electrode 220. Alternatively, the structure of the first deflection electrode 220 may be as shown in fig. 8. Fig. 8 is a top view of the first deflection electrode 220. As shown in fig. 8, the first deflection electrode includes a third surface 221 and a fourth surface 222. Wherein the third surface 221 may contact or be fixed with the insulator fixing portion 230. As can be seen from the above, the third surface 221 may contact or be fixed with the second surface 232 of the insulator fixing portion 230. Alternatively, the third surface 221 and the fourth surface 222 may each be a curved surface, and the curvature of the third surface 221 may conform to the curvature of the second surface 232 to maintain the coaxiality of the plurality of deflection electrodes.

Alternatively, as shown in fig. 8, the third surface 221 corresponds to an angle α, and the fourth surface corresponds to an angle β, α < β. When a plurality of deflection electrodes are present, the structure of the plurality of deflection electrodes may be maintained in conformity with the first deflection electrode 220. This allows a large gap to be present between the deflection electrodes when they are arranged along the inner circumference of the housing, thereby increasing the operable space between the deflection electrodes, for example, other components may be provided between these gaps, and the space occupied by the entire electron beam deflection apparatus 200 may be saved.

The electron beam deflection device can provide better electron beam deflection effect while increasing the operable space between the deflection electrodes. The following description will be given by taking fig. 9 to 10 as an example.

Fig. 9 is a potential equipotential diagram of an electron beam deflection apparatus 900. Fig. 9 is calculated by software simulation. The electron beam deflection device 900 includes: a housing 910 and 8 deflection electrodes 920. The two arcs of the deflection electrode 920 have the same corresponding angle. The gray curves in fig. 9 represent potential equipotential lines within the housing 910.

Fig. 10 is a potential equipotential line diagram of an electron beam deflection apparatus 200 according to the present application. Fig. 10 is calculated by software simulation. Wherein α < β of the first deflection electrode 220. The grey curves in fig. 10 represent potential equipotential lines within the housing 210.

As can be seen from fig. 9 and 10, the potential equipotential lines shown in fig. 9 and those shown in fig. 10 are almost the same in the region surrounded by the electrodes. It can be seen that the electron beam deflection device 200 has the same deflection effect as the electron beam deflection device 900 shown in fig. 9. Therefore, the application proposes that the operable space between the deflection electrodes can be increased on the basis of maintaining a better deflection effect.

Alternatively, the fifth surface 223 and the sixth surface 224 of the first deflection electrode 220 may be disposed in parallel. The first deflection electrode 220 of this structure is simple to manufacture and can maintain a large gap between the plurality of deflection electrodes.

Fig. 11 is a perspective view of the first deflection electrode 220 shown in fig. 8. Since there is a gap between the sixth surface 224 of the first deflection electrode 220 and the adjacent deflection electrode, a component may be provided near the sixth surface 224, for example, a wire may be soldered to the sixth surface 224. Alternatively, a lead groove 225 may be provided on the sixth surface 224, thereby leading out the deflection electrode line. In order to reduce the influence of the deflection electrode line on the electric field generated by the first deflection electrode 220 as much as possible, the deflection electrode line may be disposed at a position close to the housing.

The above description is only exemplary of the present application and should not be taken as limiting the present application, as any modifications, equivalents and the like that are within the spirit and principle of the present application should be included in the scope of the present application.