阅读说明：本技术 载能与换能一体化式核电池 (Energy-carrying and energy-converting integrated nuclear battery ) 是由 陆景彬 李潇祎 许旭 李成乾 于 2021-08-26 设计创作，主要内容包括：本发明公开了属于核能利用技术领域的载能与换能一体化式核电池。该核电池的原理是,将辐射伏特效应核电池中的半导体换能材料中的一种或几种稳定同位素替换为放射性同位素,放射性同位素发射的α或β粒子直接沉积在半导体换能材料中,产生大量电子空穴对,由高掺杂的半导体衬底、低掺杂的具有放射性的半导体层和电池肖特基金属层构成肖特基结构,并形成内建电场,电子空穴对在内建电场的作用下发生定向移动,外接负载并形成闭合回路后产生电流。与放射源与换能器件分立结构的核电池相比,本发明能够使放射源与半导体换能材料充分接触,减轻放射源自吸收效应的影响,提高放射源的能量利用率,增加核电池的输出功率。(The invention discloses an energy-carrying and energy-converting integrated nuclear battery, which belongs to the technical field of nuclear energy utilization. The principle of the nuclear battery is that one or more stable isotopes in a semiconductor transduction material in the radiant volt effect nuclear battery are replaced by radioactive isotopes, alpha or beta particles emitted by the radioactive isotopes are directly deposited in the semiconductor transduction material to generate a large number of electron hole pairs, a Schottky structure is formed by a highly doped semiconductor substrate, a low doped radioactive semiconductor layer and a battery Schottky metal layer, a built-in electric field is formed, the electron hole pairs move directionally under the action of the built-in electric field, and a current is generated after the electron hole pairs are externally connected with a load and form a closed loop. Compared with the nuclear battery with the structure that the radioactive source and the energy conversion device are separated, the nuclear battery can ensure that the radioactive source is fully contacted with the semiconductor energy conversion material, reduces the influence of the self-absorption effect of the radioactive source, improves the energy utilization rate of the radioactive source and increases the output power of the nuclear battery.)

1. Carry can and transduction integrated formula nuclear battery, its characterized in that: comprises 1-a highly doped semiconductor substrate with radioactivity, 2-a lowly doped semiconductor layer with radioactivity, 3-a cell Schottky metal layer, 4-a cell ohmic electrode and 5-a sealed shell.

2. The energy and energy conversion integrated nuclear battery of claim 1, wherein: the highly doped radioactive semiconductor substrate 1 and the lowly doped radioactive semiconductor layer 2 are semiconductor materials in which one or more stable isotopes are replaced by radioactive isotopes, preferably beta-radioactive carbon isotopes¹⁴Diamond of C, Si¹⁴C or isotopes of nickel containing beta radioactivity⁶³NiO and other wide bandgap semiconductor materials.

3. The energy and energy conversion integrated nuclear battery of claim 1, wherein: the highly doped, radioactive semiconductor substrate 1 is preferably doped with boron to a concentration of 10¹⁸cm^-3Of p-type high doping¹⁴C single crystal diamond, low doped semiconductor layer 2 having radioactivity preferably being B₂H_6，Doping concentration<10¹⁵cm^-3Of the p-type with low doping¹⁴C single crystal diamond.

4. The energy and energy conversion integrated nuclear battery of claim 1, wherein: the cell Schottky metal layer 3 and the cell ohmic electrode 4 may have radioactivity, i.e. metal layer or ohmic electrodeThe internal stable isotope or isotopes are/are replaced by radioactive isotopes, preferably isotopes⁶³A nickel schottky metal layer made of Ni.

Technical Field

The invention belongs to the fields of nuclear physics, nuclear energy application and micro energy, and particularly relates to an energy-carrying and energy-converting integrated nuclear battery.

Background

The nuclear battery is a device for converting decay energy of the radioactive isotope into electric energy, is not influenced by external environment in the power supply process, has stable and reliable working condition, does not need manual intervention and maintenance, and can be applied to severe environments and occasions where human beings are difficult to reach for a long time, such as deep sea, deep space, polar regions, remote areas and cardiac pacemakers; among them, the radiant volt effect nuclear battery is a semiconductor device, so it is easy to integrate with integrated circuit, especially suitable for being used as energy source of micro-electro-mechanical system.

However, the current radiation volt-effect nuclear battery has the problem of low energy utilization rate, because the radioactive source has a certain thickness, the alpha or beta particles released by the radioactive source have poor penetrability, and a part of the alpha or beta particles interact with the radioactive source material and are deposited in the radioactive source, namely, the self-absorption effect is generated, so that a large amount of radioactive decay energy is deposited in the radioactive source instead of generating electron-hole pairs in a transducer, and the problem restricts the improvement of the electrical performance of the radiation volt-effect nuclear battery; in addition, under the action of rays, radiation damage is generated inside a semiconductor material used by the radiation volt-effect nuclear battery, and the service life of the battery is shortened.

The traditional radiation volt effect nuclear battery uses a structure that a transduction material and a radioactive source are separated, and for a pn junction type nuclear battery, the radioactive source, a positive electrode, a semiconductor transduction device and a back electrode are respectively arranged from top to bottom. Due to the self-absorption effect of the radioactive source, only a part of alpha or beta particles generated by decay of the radioactive source can be emitted, only a part of decay energy of the radioactive source can be utilized, a large amount of energy is deposited in the radioactive source, and negative effects such as temperature rise and the like are generated; on the other hand, electrodes of nuclear batteries are generally metallic materials, having a barrier effect against α or β particles. In the case of using a mesh electrode, if the mesh is too large, the total resistance of the device is relatively large, resulting in a reduction in the operating voltage of the nuclear battery; if the mesh is too small, the active particles can be obviously blocked, so that more energy is deposited in the electrode instead of the semiconductor material, and the utilization rate of the energy is reduced; the traditional Schottky type radiation volt effect nuclear battery is respectively provided with a radioactive source, a Schottky metal layer, a semiconductor energy conversion device and an ohmic electrode from top to bottom, and only a part of alpha or beta particles emitted by the radioactive source can be emitted due to the self-absorption effect; due to the blocking effect of the schottky metal layer, most of the emitted alpha or beta particles are deposited in the schottky metal layer and cannot be utilized. The combined action of the two aspects ensures that the beta radiation volt effect nuclear battery with the traditional discrete structure has small short-circuit current, low output power and low energy utilization rate of a radioactive source.

Disclosure of Invention

The invention aims to reduce the influence caused by the self-absorption effect of a radioactive source, improve the electrical performance of a radiation volt-effect nuclear battery and simultaneously reduce the influence of radiation damage on the electrical performance of the nuclear battery.

In order to achieve the above object, the present invention provides a nuclear battery integrating energy carrying and transduction, which is characterized in that the nuclear battery integrating energy carrying and transduction comprises 1-a highly doped semiconductor substrate with radioactivity, 2-a lowly doped semiconductor layer with radioactivity, 3-a battery Schottky metal layer, 4-a battery ohmic electrode and 5-a sealed shell.

One or more stable isotopes in the semiconductor energy conversion material are replaced by radioactive isotopes, and the traditional structure that the radioactive source and the semiconductor energy conversion material are separated is changed into a structure that the radioactive source is uniformly dispersed in the semiconductor energy conversion material, so that the radioactive source and the semiconductor energy conversion material form an integrated structure. The structure makes the radioactive source fully contact with the semiconductor energy conversion material, and most of alpha or beta particles emitted by the radioactive source can be deposited in the semiconductor energy conversion material, so that the problem of low energy utilization efficiency caused by the self-absorption effect of the radioactive source is solved to the greatest extent.

The 1-highly doped semiconductor substrate having radioactivity and the 2-lowly doped semiconductor layer having radioactivity may be semiconductor materials which themselves contain radioactivity, preferably isotopes of carbon having beta radioactivity¹⁴Diamond of C, Si¹⁴C or isotopes of nickel containing beta radioactivity⁶³NiO and other wide bandgap semiconductor materials.

The Schottky metal layer and the ohmic electrode of the battery can contain one or more elements and can also have radioactivity, namely, one or more stable isotopes in the metal layer or the ohmic electrode are replaced by radioactive isotopes.

The invention combines the radioactive source and the semiconductor energy conversion structure into a whole, alpha or beta particles emitted by the radioactive isotope directly interact with the semiconductor material, the generated electron hole pair is separated by the built-in electric field of the Schottky structure and generates directional movement, and current can be formed after a closed loop is switched on;

the invention uses a Schottky type structure, only one type of doped semiconductor is needed, the influence of the asymmetry problem of the doping of the wide bandgap semiconductor is avoided, and the process is simple and convenient.

Compared with the traditional Schottky structure only using one doping concentration, the structure of combining the high doping concentration semiconductor and the low doping concentration semiconductor is more beneficial to collecting electron hole pairs and obtaining larger short-circuit current;

the invention can utilize the energy in the radioactive source, reduce the influence of self-absorption effect, improve the energy utilization rate of the radioactive source and is beneficial to obtaining larger short-circuit current;

the invention combines the radioactive source and the semiconductor into a whole, avoids energy loss caused by deposition of the radioactive source in the Schottky metal, and further improves the energy utilization rate of the radioactive source.

Drawings

FIG. 1 is a schematic view of the present invention.

Detailed Description

The invention is further described with reference to the following figures and specific examples.

Example 1

FIG. 1 is a graph based on¹⁴A schematic diagram of an energy-carrying and energy-converting integrated nuclear battery of C diamond comprises a 1-highly doped semiconductor substrate with radioactivity, a 2-lowly doped semiconductor layer p-type lowly doped semiconductor layer with radioactivity¹⁴C, a diamond layer, 3-a battery Schottky metal layer, 4-a battery ohmic electrode and 5-a sealed shell.

In this embodiment, the 1-highly doped radioactive semiconductor substrate is a p-type highly doped beta radioisotope¹⁴Single crystal diamond substrate of C, 2-low doped toolThe semiconductor layer with radioactivity is p-type low-doped beta radioisotope¹⁴C, the 3-cell Schottky metal layer is formed by beta radioisotope⁶³The Ni-based Schottky metal layer and the 4-cell ohmic electrode are Ti/Pt/Au ohmic electrodes.

The preparation method of the energy-carrying and transduction integrated nuclear battery in the embodiment comprises the following steps:

(1) synthesis of p-type highly doped using high temperature high pressure process¹⁴C single crystal diamond substrate with crystal orientation of {001}, carbon source containing¹⁴C graphite doped with boron atoms to obtain p-type conductivity at a doping concentration of 10¹⁸cm^-3。

(2) Using H₂/O₂With high p-type doping by mixed plasma¹⁴And C, carrying out surface pretreatment on the monocrystalline diamond substrate for 15min to remove surface pollutants.

(3) Highly doped p-type using Microwave Plasma Chemical Vapor Deposition (MPCVD)¹⁴Synthesis of p-type low doped diamond on C single crystal diamond substrate¹⁴C diamond layer using a gas of¹⁴CH₄And H₂P-type conductivity is obtained by doping boron atoms, the boron source being B₂H_6，Doping concentration<10¹⁵cm^-3And finishing the preparation of the energy-carrying transduction part.

(4) Highly doped by p-type using laser cutting¹⁴C single crystal diamond substrate and p-type low doped¹⁴C diamond layer to obtain defect-free energy-carrying transducer.

(5) Etching highly p-doped in Ar-O plasma¹⁴C single crystal diamond substrate and p-type low doped¹⁴C diamond layer, obtaining an oxygen terminated surface.

(6) Highly p-doped with SAS, acetone, isopropanol¹⁴C single crystal diamond substrate and p-type low doped¹⁴And C, chemically cleaning the diamond layer, and annealing at 680 ℃ in an air environment.

(7) Highly doped in p-type by magnetron sputtering¹⁴C single crystal diamond substrateLower surface and p-type low doping¹⁴C, preparing a Ti/Pt/Au ohmic electrode by the diamond layer.

(8) Low doping of p-type in Ar atmosphere at room temperature¹⁴C diamond layer surface deposition⁶³A Ni Schottky metal layer.

(9) And connecting a first lead and a second lead on the Ti/Pt/Au ohmic electrode, and packaging the battery by using a sealed shell.