阅读说明：本技术 电力转换器 (Power converter ) 是由 徳舛彰 渡边庸佑 于 2020-04-01 设计创作，主要内容包括：电力转换器(20、30)包括与各相对应的上臂开关、下臂开关(SUp～Scn)。各相的所述下臂开关(SUn、SVn、SWn、Scn)具有第一端子、第二端子和栅极。电力转换器包括：电压生成电路(74、71B、72B),该电压生成电路的正极侧连接到各相的下臂开关中的仅任意一相的下臂开关(SUn、SVn)的第二端子；负极侧路径(80n),该负极侧路径是连接到电压生成电路的负极侧的电气路径；以及电容器(75V、75W、75c),该电容器的第一端侧连接到各相的下臂开关中的没有连接电压生成电路的其余的下臂开关(SVn、SWn、Scn)的第二端子,第二端侧连接到负极侧路径。(The power converters (20, 30) include upper arm switches and lower arm switches (SUp-Scn) corresponding to the respective switches. The lower arm switch (SUn, SVn, SWn, Scn) of each phase has a first terminal, a second terminal, and a gate. The power converter includes: voltage generation circuits (74, 71B, 72B) whose positive electrode sides are connected to the second terminals of the lower arm switches (SUn, SVn) of only one of the lower arm switches of the respective phases; a negative electrode side path (80n) which is an electrical path connected to the negative electrode side of the voltage generation circuit; and capacitors (75V, 75W, 75c) having first ends connected to second terminals of the remaining lower arm switches (SVn, SWn, Scn) to which the voltage generation circuit is not connected among the lower arm switches of the respective phases, and second ends connected to the negative electrode path.)

1. A power converter (20, 30),

comprises an upper arm switch and a lower arm switch (SUp-Scn) corresponding to each other,

the lower arm switch (SUn, SVn, SWn, Scn) of each phase has a first terminal, a second terminal, and a gate, and is turned on by setting a potential difference between the gate and the second terminal to a threshold voltage or more to allow a current to flow between the first terminal and the second terminal, and is turned off by setting the potential difference to a value lower than the threshold voltage to prevent the current from flowing from the first terminal to the second terminal,

the power converter includes:

voltage generation circuits (74, 71B, 72B) whose positive electrode sides are connected to the second terminals of the lower arm switches (SUn, SVn) of only one of the lower arm switches of the respective phases;

a negative electrode side path (80n) which is an electrical path connected to the negative electrode side of the voltage generation circuit; and

and a capacitor (75V, 75W, 75c) having a first end side connected to the second terminal of the lower arm switch of each phase which is not connected to the remaining lower arm switches (SVn, SWn, Scn) of the voltage generation circuit, and a second end side connected to the negative electrode side path.

2. The power converter according to claim 1,

negative side inductors (91, 92) are provided between a connection point connected to the negative side of the voltage generation circuit (74) in the negative side path and a connection point connected to the second ends of the capacitors (75V, 75W).

3. The power converter according to claim 2,

includes a positive electrode side path (80p) which is an electrical path connected to the positive electrode side of the power source (71, 71A),

the negative side path is connected to the negative side of the power supply,

includes drive ICs (70U, 70V, 70W) that are provided separately corresponding to the lower arm switches of the respective phases and are connected to the positive electrode side path, the negative electrode side path, and the gate electrodes of the lower arm switches, respectively, and that are driven to be turned on and off by power supplied from the power supply via the positive electrode side path,

includes positive-side inductors (112, 122) provided between connection points in the positive-side path to which the drive ICs are connected,

the positive-side inductors and the negative-side inductors (111, 121) of one set connected via the drive IC are magnetically coupled, and the inductors of one set are configured as one component.

4. A power converter according to any one of claims 1 to 3, comprising:

secondary side coils (71, 71A) of a transformer constituting an insulated power supply; and

a positive side path (80p) connected to a first end of the secondary side coil,

the negative side path is connected to a second end of the secondary side coil.

5. The power converter according to claim 4,

the secondary side coil is set as a first secondary side coil (71A),

includes a second secondary side coil (71B) which is a secondary side coil of the transformer and constitutes the voltage generation circuit,

the second terminal is connected to the positive electrode side of the second secondary side coil,

the negative electrode side path is connected to the negative electrode side of the second secondary side coil.

6. A power converter according to any one of claims 1 to 5,

comprises a circuit board having connection parts (TUn-Tcn) for connecting the gates of the lower arm switches of each phase,

the connecting parts are arranged on the circuit substrate in a row,

the voltage generating circuit is provided between the connecting portions located at both ends in a direction in which the connecting portions are arranged in the circuit substrate.

7. A power converter according to any one of claims 1 to 6,

includes a driver IC (70U, 70V, 70W) which is provided separately corresponding to the lower arm switch of each phase and is connected to the gate of the lower arm switch, drives the lower arm switch to be turned on or off,

the voltage generation circuit is built in a driver IC (70U) which turns on and off a lower arm switch (SUp) connected to the voltage generation circuit among the driver ICs,

the drive IC incorporating the voltage generation circuit controls an output voltage of the voltage generation circuit to a target Voltage (VN),

the drive ICs (70V, 70W) of each of the drive ICs, except for the drive IC incorporating the voltage generation circuit, monitor the voltage of the capacitor (75V, 75W) connected to the lower arm switch (SVn, SWn) that is the drive target of the drive IC, and determine whether or not an abnormality occurs in which the voltage of the capacitor deviates from the target voltage, based on the monitoring result.

Technical Field

The present disclosure relates to a power converter.

Background

As an electric power converter, for example, an inverter including upper and lower arm switches corresponding to each is known as described in patent document 1.

Documents of the prior art

Patent document

Patent document 1: japanese patent laid-open No. 2008-61290

Disclosure of Invention

The lower arm switch of each phase constituting the power converter has a first terminal, a second terminal, and a gate. The lower arm switch is in an on state in which a potential difference (gate voltage) between the gate and the second terminal is equal to or greater than a threshold voltage, thereby allowing a current to flow between the first terminal and the second terminal, and is in an off state in which the gate voltage is lower than the threshold voltage, thereby preventing a current from flowing from the first terminal to the second terminal.

Here, when the lower arm switch is turned off, for example, electric charge can be supplied to the gate via a parasitic capacitance of the lower arm switch, and therefore the gate voltage may be equal to or higher than the threshold voltage. In this case, although the lower arm switch is maintained in the off state, the lower arm switch is erroneously switched to the on state, that is, automatically turned on.

In order to suppress the occurrence of the automatic on, it is conceivable to provide a voltage generation circuit for supplying a negative gate voltage to the gate of the lower arm switch separately for the lower arm switches of the respective phases. However, in this case, since the voltage generation circuits of the number of phases are required, the structure of the power converter may be complicated.

A primary object of the present disclosure is to provide a power converter capable of achieving simplification of a structure.

The present disclosure is a power converter including an upper arm switch and a lower arm switch corresponding to each other,

the lower arm switch of each phase has a first terminal, a second terminal, and a gate, and is turned on by setting a potential difference between the gate and the second terminal to a threshold voltage or higher to allow a current to flow between the first terminal and the second terminal, and is turned off by setting the potential difference to a level lower than the threshold voltage to prevent the current from flowing from the first terminal to the second terminal,

the method comprises the following steps: a voltage generation circuit having a positive electrode side connected to the second terminal of the lower arm switch of only one of the lower arm switches of the respective phases;

a negative electrode side path that is an electrical path connected to a negative electrode side of the voltage generation circuit; and

a capacitor whose first end side is connected to the second terminal of the remaining lower arm switch of the lower arm switches of the respective phases to which the voltage generation circuit is not connected, and whose second end side is connected to the negative electrode side path.

According to the present disclosure, a voltage generation circuit is provided for only one of the lower arm switches of each phase. Therefore, the structure of the power converter can be simplified as compared with a structure in which a voltage generation circuit is provided separately for the lower arm switch of each phase.

Here, according to the present disclosure, a negative side path is connected to the negative side of the voltage generation circuit. Therefore, a configuration for supplying a negative gate voltage to the gates of the remaining lower arm switches to which the voltage generation circuit is not connected among the lower arm switches of the respective phases can be realized by the negative electrode side path and the capacitor that connects the second terminals of the remaining lower arm switches to the negative electrode side path.

As described above, according to the present disclosure, the negative gate voltage can be supplied to the gate of the lower arm switch of each phase with a simple configuration including the voltage generation circuit provided only for the lower arm switch of any one phase, the capacitor as the passive element, and the negative electrode side path.

Drawings

The above objects, other objects, features and advantages of the present disclosure will become more apparent with reference to the accompanying drawings and the following detailed description. The drawings are as follows.

Fig. 1 is an overall configuration diagram of a control system according to a first embodiment.

Fig. 2 is a diagram showing the drive ICs of the upper and lower arms and their peripheral structures.

Fig. 3 is a diagram showing the driver ICs of the upper and lower arms and the peripheral configuration thereof of the comparative example.

Fig. 4 is a diagram showing a driver IC of a lower arm and a peripheral structure thereof according to a second embodiment.

Fig. 5 is a diagram showing a driver IC of a lower arm and a peripheral structure thereof according to a third embodiment.

Fig. 6 is a flowchart showing the procedure of the abnormality determination processing of the capacitor voltage.

Fig. 7 is a diagram showing a driver IC of a lower arm and a peripheral structure thereof according to a fourth embodiment.

Fig. 8 is a diagram showing a driver IC of a lower arm and a peripheral structure thereof in the fifth embodiment.

Fig. 9 is a diagram showing an equivalent circuit of the negative voltage power supply, the negative side inductor, and the peripheral structure thereof.

Fig. 10 is a diagram showing a driver IC of a lower arm and a peripheral structure thereof according to a sixth embodiment.

Fig. 11 is a diagram showing a driver IC of a lower arm and a peripheral structure thereof according to the seventh embodiment.

Fig. 12 is a diagram showing a driver IC of a lower arm and a peripheral structure thereof according to the eighth embodiment.

Fig. 13 is a diagram showing an arrangement of negative voltage power supplies on a circuit board.

Fig. 14 is a diagram showing a driver IC of a lower arm and a peripheral structure thereof according to the ninth embodiment.

Fig. 15 is a diagram showing an arrangement of negative voltage power supplies on a circuit board.

Fig. 16 is a diagram showing the drive ICs of the upper and lower arms and the peripheral configuration thereof according to another embodiment.

Detailed Description

< first embodiment >

Hereinafter, a first embodiment embodying the power converter of the present disclosure will be described with reference to the drawings.

As shown in fig. 1, the control system includes a direct-current power supply 10, a DCDC converter 20 and an inverter 30 as power converters, a rotating electrical machine 40, and a control device 50. The dc power supply 10 is a battery having a terminal voltage of 100V or more, for example. The dc power supply 10 is, for example, a secondary battery such as a lithium ion battery or a nickel hydrogen battery.

The rotating electrical machine 40 is, for example, an in-vehicle main unit. In the present embodiment, a three-phase structure is used as the rotating electric machine 40. The rotary electric machine 40 includes a U-phase winding 41U, V phase winding 41V and a W-phase winding 41W. As the rotating electric machine 40, for example, a permanent magnet synchronous rotating electric machine can be used.

The DCDC converter 20 includes a capacitor 21, a reactor 22, an upper arm boost switch Scp, and a lower arm boost switch Scn. In the present embodiment, each of the boost switches Scp and Scn is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) as a SiC device. Body diodes are formed in the boost switches Scp and Scn. The DCDC converter 20 has a function of boosting and outputting the output voltage of the dc power supply 10 by driving the respective boosting switches Scp and Scn.

The upper arm boost switch Scp and the lower arm boost switch Scn are modularized to constitute a boost module MC. The boost module MC has a flat rectangular parallelepiped shape and includes a drain terminal TD, a source terminal TS, and a connection terminal TA. A drain (corresponding to a first terminal) of upper arm boost switch Scp is connected to drain terminal TD, and a source (corresponding to a second terminal) of lower arm boost switch Scn is connected to source terminal TS. The source of upper arm boost switch Scp and the drain of lower arm boost switch Scn are connected to connection terminal TA.

A first end of the reactor 22 is connected to a connection terminal TA of the boost module MC. A positive terminal of the dc power supply 10 is connected to a second end of the reactor 22. The positive electrode side conductive member 23p is connected to the drain terminal TD of the booster module MC. The negative-side conductive member 23n is connected to the source terminal TS of the booster module MC. The negative electrode terminal of the dc power supply 10 is connected to the negative electrode-side conductive member 23 n.

Inverter 30 includes U-phase upper arm switch SUp, U-phase lower arm switch SUn, V-phase upper arm switch SVp, V-phase lower arm switch SVn, and W-phase upper arm switch SWp, W-phase lower arm switch SWn. In the present embodiment, each of the switches SUp, SUn, SVp, SVn, SWp, and SWn is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) as a SiC device. Each of the switches SUp, SUn, SVp, SVn, SWp, and SWn is formed with a body diode.

U-phase upper arm switch SUn and U-phase lower arm switch SUn are modularized to form U-phase module MU. The V-phase upper arm switch SVp and the V-phase lower arm switch SVn are modularized to form a V-phase module MV. The W-phase upper arm switch SWp and the W-phase lower arm switch SWn are modularized to form a W-phase module MW. In the present embodiment, each phase module MU, MV, MU has the same configuration as the boosting module MC. Therefore, the detailed description of each phase module MU, MV, MU is omitted. Note that, for convenience, the drain terminals are denoted by a common reference symbol TD in each of the modules MC, MU, MV, and MW, but actually, separate drain terminals are provided in each of the modules MC, MU, MV, and MW. The same applies to the source terminal TS and the connection terminal TA.

The positive-side conductive member 23p is connected to the drain terminal TD of each phase module MU, MV, MW, and the negative-side conductive member 23n is connected to the source terminal TS of each phase module MU, MV, MU. Each of the conductive members 23p and 23n has an elongated shape and is constituted by a bus bar in the present embodiment. The source terminal TS of the U-phase module MU, the source terminal TS of the V-phase module MV, the source terminal TS of the W-phase module MW, and the source terminal TS of the boost module MC are connected to the negative-side conductive member 23n in this order from one end side thereof. The positive electrode-side conductive member 23p has a drain terminal TD of the U-phase module MU, a drain terminal TD of the V-phase module MV, a drain terminal TD of the W-phase module MW, and a drain terminal TD of the boost module MC connected in this order from one end side thereof.

A first end of the U-phase winding 41U is connected to the connection terminal TA of the U-phase module MU. A first end of the V-phase winding 41V is connected to a connection terminal TA of the V-phase module MV. A first end of the W-phase winding 41W is connected to the connection terminal TA of the W-phase module MU. The second ends of the respective phase windings 41U, 41V, 41W are connected at a neutral point.

The control device 50 drives the DCDC converter 20 and the inverter 30 to control the control amount of the rotating electrical machine 40 to its command value. The controlled variable is, for example, torque. In order to control the output voltage of the DCDC converter 20 to the target value, the control device 50 outputs the drive signals of the respective boost switches Scp, Scn to the drive ICs provided individually for the respective boost switches Scp, Scp.

The controller 50 outputs the drive signals of the switches SUp to SWn to the drive ICs individually provided to the switches SUp to SWn in order to turn on and off the switches SUp to SWn of the drive inverter 30. For example, the control device 50 generates the drive signals corresponding to the respective drive ICs by PWM processing based on comparison of the magnitudes of carrier signals such as three-phase command voltages whose phases are separated from each other by an electrical angle of 120 ° and a triangular wave.

The drive signal is either an on command for instructing on-drive of the switch or an off command for instructing off-drive. In each phase and the DCDC converter 20, the drive signal on the upper arm side and the corresponding drive signal on the lower arm side are alternately the on command. Therefore, in each phase, the upper arm switch and the lower arm switch are alternately turned on. In addition, the functions provided by the control device 50 may be provided by, for example, software stored in a physical memory device and a computer, hardware, or a combination thereof that executes the software.

Next, the inverter 30 will be further described with reference to fig. 2. First, the upper arm of inverter 30 will be explained.

Drive ICs 60U, 60V, and 60W are provided individually for U-phase upper arm switch SUp, V-phase upper arm switch SVp, and W-phase upper arm switch SWp. The drive ICs 60U, 60V, and 60W are supplied with electric power from an insulated power supply provided separately. For the U phase, the anode of the diode 62U is connected to a first end of the secondary winding 61U of the transformer constituting the insulated power supply. A first end of the smoothing capacitor 63U and a power supply terminal of the driver IC60U are connected to a cathode of the diode 62U. A second end of the smoothing capacitor 63U and a ground terminal of the driver IC60U are connected to a second end of the secondary coil 61U.

A source of the U-phase upper arm switch SUp is connected to a positive terminal of the negative voltage power supply 64U and a first end of the capacitor 65U. A negative terminal of the negative voltage power supply 64U and a second terminal of the capacitor 65U are connected to a ground terminal of the driver IC 60U.

When determining that the drive signal output from the control device 50 is an on command, the drive IC60U supplies the power supply voltage VP (for example, 20V) that is the voltage of the secondary winding 61U to the gate of the U-phase upper arm switch SUp. Accordingly, the gate voltage of the U-phase upper arm switch SUp becomes equal to or higher than the threshold voltage Vth, and the U-phase upper arm switch SUp is switched to the on state. When determining that the drive signal has become the off command, the drive IC60U supplies "VP-VN" to the gate of the U-phase upper arm switch SUp. VN is a value (for example, 4V) lower than the power supply voltage VP, and is a target value of the output voltage of the negative voltage power supply 64U. By supplying "VP-VN" to the gate, the gate voltage of the U-phase upper arm switch SUp is lowered below the threshold voltage Vth, and the U-phase upper arm switch SUp is switched to the off state.

In the V phase, the drive IC60V, the secondary side coil 61V constituting the insulated power supply, the diode 62V, the smoothing capacitor 63V, the negative voltage power supply 64V, and the capacitor 65V are provided, as in the U phase. In addition, in the W phase, the drive IC60W, the secondary side coil 61W constituting the insulated power supply, the diode 62W, the smoothing capacitor 63W, the negative voltage power supply 64W, and the capacitor 65W are provided, as in the U phase. However, since the V-phase and W-phase have the same structure as the U-phase, detailed description thereof will be omitted.

Next, the lower arm of the inverter 30 will be described.

Drive ICs 70U, 70V, and 70W are provided individually for U-phase lower arm switch SUn, V-phase lower arm switch SVn, and W-phase lower arm switch SWn. Power is supplied to the driver ICs 70U, 70V, and 70W from a common insulated power supply. Specifically, an anode of a diode 72U is connected to a first end of a secondary side coil 71 of a transformer constituting the insulated power supply. A positive electrode path 80p is connected to the cathode of the diode 72. A negative electrode path 80n is connected to a second end of the secondary winding 71.

To explain the U-phase, the first end of the U-phase smoothing capacitor 63U and the power supply terminal of the U-phase drive IC70U are connected to the positive-electrode path 80 p. The second end of U-phase smoothing capacitor 73U and the ground terminal of U-phase drive IC70U are connected to negative electrode path 80 n.

A positive terminal of a negative voltage power supply 74 as a voltage generation circuit and a first end of a U-phase capacitor 75U are connected to a source of the U-phase lower arm switch SUn. A negative electrode path 80n is connected to a negative electrode terminal of the negative voltage power supply 74 and a second end of the U-phase capacitor 75U.

To explain the V phase, the first end of the V-phase smoothing capacitor 63V and the power supply terminal of the V-phase drive IC70V are connected to the positive-electrode path 80 p. The second end of the V-phase smoothing capacitor 73V and the ground terminal of the V-phase drive IC70V are connected to the negative electrode path 80 n.

The source of V-phase lower arm switch SVn is connected to a first terminal of V-phase capacitor 75V, instead of the negative voltage source. A negative electrode path 80n is connected to a second end of the V-phase capacitor 75V.

To explain the W phase, the first end of the W-phase smoothing capacitor 63W and the power supply terminal of the W-phase drive IC70W are connected to the positive-electrode path 80 p. The second end of the W-phase smoothing capacitor 73W and the ground terminal of the W-phase drive IC70W are connected to the negative-side path 80 n.

Similarly to the V phase, the source of the W-phase lower arm switch SWn is connected to the first terminal of the W-phase capacitor 75W, instead of the negative voltage source. A negative electrode path 80n is connected to a second end of the W-phase capacitor 75W.

In the present embodiment, power is supplied from the common secondary winding 71 to the power supply terminals of the driver ICs 70U, 70V, and 70W. Therefore, in each phase, the variation in voltage supplied to the gate when the lower arm switch is driven to be turned on can be reduced.

In the present embodiment, the positive-side path 80p and the negative-side path 80n are formed as wiring patterns on a circuit board included in the inverter 30. The driver ICs 60U, 60V, 60W, 70U, 70V, and 70W, the smoothing capacitors 63U, 63V, 63W, 73U, 73V, and 73W, the negative voltage power supplies 64U, 64V, 64W, and 74, and the capacitors 65U, 65V, 65W, 75U, 75V, and 75W are provided on the circuit board.

As described above, in the present embodiment, negative voltage power supply 74 is provided only for U-phase lower arm switch SUn among U-phase lower arm switch SUn, V-phase lower arm switch SVn, and W-phase lower arm switch SWn. Therefore, the configuration of inverter 30 can be simplified as compared with a configuration in which negative voltage power supplies are provided individually for U-phase lower arm switch SUn, V-phase lower arm switch SVn, and W-phase lower arm switch SWn, respectively.

In the present embodiment, a negative electrode path 80n is connected to the negative electrode terminal of the negative voltage power supply 74. Therefore, a configuration for supplying the negative gate voltage "-VN" to the gates of the V-phase lower arm switch SVn and the W-phase lower arm switch SWn to which the negative voltage power supply 74 is not connected can be realized by a simple configuration of the negative voltage power supply 74, the negative electrode path 80n, and the V-phase capacitor 75V, W, i.e., the phase capacitor 75W.

In contrast, as in the comparative example shown in fig. 3, the configuration in which the U-phase negative voltage power supply 74U, V and the negative voltage power supply 74V, W and the negative voltage power supply 74W are provided separately for each phase leads to a complicated configuration.

In the comparative example, when the output voltage of any one of the U-phase negative voltage power supply 74U, V and the negative voltage power supply 74V, W and the negative voltage power supply 74W is lower than the other output voltages, a current flows back. The return current of the current is generated by using a common insulated power supply as a power supply for each phase. Fig. 3 shows an example in which a return current indicated by an arrow of a broken line in the figure is generated because the output voltage of the V-phase negative voltage power supply 74V is lower than the output voltage of the U-phase negative voltage power supply 74U, W negative voltage power supply 74W. In this case, the load of the U-phase negative voltage power supply 74U, W and the negative voltage power supply 74W is higher than the expected load at the time of design. As a result, there is a possibility that the U-phase negative voltage power supply 74U, W and the negative voltage power supply 74W are in an overheated state, for example, and the reliability of the U-phase negative voltage power supply 74U, W and the negative voltage power supply 74W is lowered. In contrast, in the present embodiment, the negative voltage source 74 is provided as a configuration for supplying a negative voltage only in the U-phase, and the capacitors 75V and 75W are provided as passive elements only in the V-phase and W-phase. Therefore, the above-described problems described in the comparative examples can be prevented from occurring.

< second embodiment >

Hereinafter, a second embodiment will be described focusing on differences from the first embodiment with reference to the drawings. In the present embodiment, as shown in fig. 4, the negative voltage source 74 is incorporated in the U-phase drive IC 70U. In fig. 4, for convenience, the same components as those shown in fig. 2 are denoted by the same reference numerals. Further, fig. 4 shows only the structure of the lower arm of the upper and lower arms.

< third embodiment >

Hereinafter, a third embodiment will be described focusing on differences from the second embodiment with reference to the drawings. In the present embodiment, among the drive ICs 70U, 70V, and 70W of the lower arm phases, the V-phase drive IC70V and the W-phase drive IC70W that do not include the negative voltage power supply 74 have a function of monitoring the voltage of the V-phase capacitor 75V, W phase capacitor 75W. Fig. 5 shows a structure of a lower arm of inverter 30. In fig. 5, for convenience, the same components as those shown in fig. 4 are denoted by the same reference numerals.

The output voltage of the negative voltage power supply 74 may deviate greatly from the target voltage VN for some reason. In this case, the voltage of the V-phase capacitor 75V, W and the capacitor 75W may be greatly deviated from the target voltage VN, and the occurrence of the automatic conduction may not be appropriately suppressed. Therefore, V-phase drive IC70V and W-phase drive IC70W have a monitoring function of monitoring the voltage of V-phase capacitor 75V, W and phase capacitor 75W, and determine whether or not there is an abnormality in which the voltage of V-phase capacitor 75V, W and phase capacitor 75W deviates from target voltage VN based on the monitoring result.

The abnormality determination processing of the voltage of the V-phase capacitor 75V will be described with reference to the V-phase of the V-phase and the W-phase as an example. Fig. 6 shows a flowchart of the abnormality determination process performed by the V-phase drive IC 70V.

In step S10, the voltage VVD of the V-phase capacitor 75V is detected. In step S11, it is determined whether or not the detected voltage VVD is included in a predetermined range (VN- α to VN + α) including the target voltage VN.

When it is determined in step S11 that the detected voltage VVD is within the predetermined range, it is determined that the voltage of the V-phase capacitor 75V is normal.

On the other hand, when it is determined in step S11 that the detected voltage VVD is out of the predetermined range, the process proceeds to step S13, where it is determined whether or not the detected voltage VVD is lower than the lower limit value "VN- α" (e.g., 3V) of the predetermined range. When it is determined in step S13 that detected voltage VVD is lower than lower limit value "VN- α", the process proceeds to step S14, where it is determined that a low voltage abnormality in which the voltage of V-phase capacitor 75V becomes lower than target voltage VN has occurred.

In addition, in conjunction with the processing of step S14, an instruction to increase the target voltage VN of the negative voltage power supply 74 may be transmitted to the U-phase drive IC 70U. In this case, the U-phase drive IC70U may set the increase amount of the target voltage VN to "VN-VVD", for example. This makes it possible to bring the voltage of the V-phase capacitor 75V close to the target voltage VN.

In the case where a negative determination is made in step S13, it is determined that the detected voltage VVD exceeds the upper limit value "VN + α" of the predetermined range (e.g., 5V), and the process proceeds to step S15. In step S15, it is determined that a high voltage abnormality in which the voltage of the V-phase capacitor 75V becomes higher with respect to the target voltage VN has occurred.

In addition, in conjunction with the processing of step S15, an instruction to lower the target voltage VN of the negative voltage power supply 74 may be transmitted to the U-phase drive IC 70U. In this case, the U-phase drive IC70U may set the amount of decrease in the target voltage VN to "VVD-VN", for example. This makes it possible to bring the voltage of the V-phase capacitor 75V close to the target voltage VN.

According to the present embodiment described above, it is possible to accurately determine whether or not an abnormality occurs in the voltage of the V-phase capacitor 75V, W phase capacitor 75W.

< modification of the third embodiment >

When it is determined that the detection function of the U-phase capacitor 75U is abnormal, the U-phase drive IC70U incorporating the negative voltage power supply 74 may acquire the voltage of the V-phase capacitor 75V detected by the V-phase drive IC70V not incorporating the negative voltage power supply 74 or the voltage of the W-phase capacitor 75W detected by the W-phase drive IC70W not incorporating the negative voltage power supply 74, and operate the negative voltage power supply 74 to feedback-control the acquired voltage to the target voltage VN.

When it is determined that the detection voltage VVD is lower than "VN — α" and close to 0, the V-phase drive IC70V may determine that a short-circuit failure of the V-phase capacitor 75V has occurred.

< fourth embodiment >

Hereinafter, a fourth embodiment will be described focusing on differences from the first embodiment with reference to the drawings. In this embodiment, as shown in fig. 7, the configuration of the negative voltage power supply is changed. In fig. 7, for convenience, the same components as or corresponding components to those shown in fig. 2 are denoted by the same reference numerals. Fig. 7 shows only the structure of the lower arm of the upper and lower arms. In the present embodiment, the secondary side coil 71 shown in fig. 2 is referred to as a first secondary side coil 71A, and the diode 72 is referred to as a first diode 72A.

A first end (positive electrode side) of the U-phase capacitor 75U and a source of the U-phase lower arm switch SUn are connected to a first end of the second secondary coil 71B constituting the insulated power supply. A negative electrode path 80n is connected to a second end (negative electrode side) of the second secondary winding 71B and a second end of the first secondary winding 71A. In negative-side path 80n, second diode 72B is provided between the second end of second secondary coil 71B and the ground terminal of U-phase drive IC 70U. A second terminal of U-phase capacitor 75U is connected to the cathode of second diode 72B. In the present embodiment, the second secondary winding 71B and the second diode 72B constitute a voltage generation circuit.

In the present embodiment, the polarity of the second end side of the first secondary winding 71A is configured to be the same as the polarity of the first end side of the second secondary winding 71B. Further, the output voltage VN (e.g., 4V) of the second secondary side coil 71B is lower than the output voltage (power supply voltage VP) of the first secondary side coil 71A. The "-VN" generated by the second secondary side coil 71B is a negative voltage supplied to the gate.

According to the present embodiment described above, the negative voltage power supply can be realized with a simple configuration.

< fifth embodiment >

Hereinafter, a fifth embodiment will be described focusing on differences from the first embodiment with reference to the drawings. In the present embodiment, as shown in fig. 8, an inductor is provided in the negative electrode side path 80 n. In fig. 8, for convenience, the same components as those shown in fig. 2 are denoted by the same reference numerals. Further, fig. 8 shows only the structure of the lower arm of the upper and lower arms.

A first negative electrode-side inductor 91 is provided between a connection Point (PX) connected to the negative voltage source 74 and a connection point connected to the V-phase smoothing capacitor 73V in the negative electrode-side path 80 n. A second negative side inductor 92 is provided between a connection point to the V-phase smoothing capacitor 73V and a connection point to the W-phase smoothing capacitor 73W in the negative side path 80 n.

The reason for providing the negative-side inductor will be described with reference to fig. 9, taking the first negative-side inductor 91 as an example. In fig. 9, PA denotes the positive terminal side of the negative voltage power supply 74, and PB denotes the first end side of the V-phase capacitor 75V. Fig. 9 shows an equivalent circuit of a closed circuit including the negative voltage power supply 74, PA, negative electrode-side conductive members 23n, PB, V-phase capacitor 75V, negative electrode-side path 80n, and PX of fig. 8.

In fig. 9, 90 denotes an inductance component of the negative-side conductive member 23 n. In fig. 9, VL indicates a counter electromotive force generated in the negative-side conductive member 23n when the current I from the winding of the rotating electric machine 40 flows through the negative-side conductive member 23 n. When the inductance of the inductance component 90 is L, "VL" is L × dI/dt ".

First, a case where the first negative electrode-side inductor 91 is not provided will be described. The output voltage of the negative voltage power supply 74 is controlled to the target voltage VN with the potential of PX as a reference. Here, when a current flows through the negative-side conductive member 23n, a counter electromotive force VL is generated in the negative-side conductive member 23 n. In this case, since the voltage VB of the V-phase capacitor 75V is set based on the potential of PX, "VB" is VN-VL "and VB is lower than VN. In this case, an appropriate negative voltage may not be supplied to the gate of the V-phase lower arm switch SVn.

Next, a case where the first negative electrode-side inductor 91 is provided will be described. In this case, even if the back electromotive force VL is generated in negative electrode-side conductive member 23n, a voltage higher in potential on the V-phase capacitor 75V side than in potential on the PX side is generated in first negative electrode-side inductor 91. This can suppress a decrease in voltage VB of V-phase capacitor 75V, and can further suppress occurrence of automatic turn-on of V-phase lower arm switch SVn.

Further, the first negative electrode side inductor 91 can reduce the above-described return current.

< sixth embodiment >

Hereinafter, the sixth embodiment will be described mainly focusing on differences from the fifth embodiment with reference to the drawings. In the present embodiment, as shown in fig. 10, an inductor is also provided in the positive electrode path 80 p. In fig. 10, for convenience, the same components as those shown in fig. 8 are denoted by the same reference numerals.

A first positive-side inductor 101 is provided between a connection point to the power supply terminal of the U-phase drive IC70U and a connection point to the V-phase smoothing capacitor 73V in the positive-side path 80 p. A second positive-side inductor 102 is provided between a connection point to the V-phase smoothing capacitor 73V and a connection point to the W-phase smoothing capacitor 73W in the positive-side path 80 p.

The voltage of the V-phase smoothing capacitor 73V can be stabilized by the first positive-side inductor 101. This can suppress a decrease in the gate voltage when the U-phase lower arm switch SUn is turned on, and can suppress an increase in the switching loss. Further, the voltage of the W-phase smoothing capacitor 73W can be stabilized by the second positive-side inductor 102. This can suppress an increase in switching loss when the W-phase lower arm switch SWn is turned on.

< seventh embodiment >

The seventh embodiment will be described below mainly with respect to differences from the fifth and sixth embodiments with reference to the drawings. In the present embodiment, as shown in fig. 11, the inductor of the negative electrode path 80n and the inductor of the positive electrode path 80p are configured as one component (common mode inductor). In fig. 11, for convenience, the same components as those shown in fig. 8 and 10 are denoted by the same reference numerals.

A set of the first negative side inductor 111 and the first positive side inductor 112 constitute the first common mode inductor 110 by magnetic coupling. The first common mode inductor 110 is configured such that the polarity of the second end side of the V-phase smoothing capacitor 73V at both ends of the first negative electrode-side inductor 111 is the same as the polarity of the first end side of the secondary-side coil 71 at both ends of the first positive electrode-side inductor 112.

The second common mode inductor 120 is configured by a set of the second negative side inductor 121 and the second positive side inductor 122 by magnetic coupling. The second common mode inductor 120 is configured such that the polarity of the second end side of the W-phase smoothing capacitor 73W at both ends of the second negative side inductor 121 is the same as the polarity of the power supply terminal side of the V-phase drive IC70V at both ends of the second positive side inductor 122.

The number of components of inverter 30 can be reduced by the configuration in which common mode inductors 110 and 120 are provided.

Further, according to the first common mode inductor 110, when a current is supplied from the first end side of the secondary winding 71 to the V-phase smoothing capacitor 73V, the voltage drop amount generated in the first positive electrode-side inductor 112 can be reduced. This makes it possible to accurately supply current from the first end of the secondary coil 71 to the V-phase smoothing capacitor 73V, and to suppress a decrease in the gate voltage when the V-phase lower arm switch SVn is switched to the on state.

Further, according to the second common mode inductor 120, when a current is supplied from the first end side of the secondary side coil 71 to the W-phase smoothing capacitor 73W, the voltage drop amount generated in the second positive side inductor 122 can be reduced. This can suppress a decrease in the gate voltage when the W-phase lower arm switch SWn is switched to the on state.

< eighth embodiment >

The eighth embodiment will be described below mainly focusing on differences from the first embodiment with reference to the drawings. In the present embodiment, as shown in fig. 12, a negative voltage power supply 74 is provided in the V phase instead of the U phase. In fig. 12, for convenience, the same components as or corresponding components to those shown in fig. 2 are denoted by the same reference numerals. Further, fig. 12 shows only the structure of the lower arm of the upper and lower arms.

Fig. 13 (a) is a front view of the board surface of the circuit board of the inverter 30.

The circuit board is provided with a U-phase connection portion TUn, a V-phase connection portion TVn, and a W-phase connection portion TWn to which gates of the U-phase lower arm switch SUn, the V-phase lower arm switch SVn, and the W-phase lower arm switch SWn are connected. The connection portions TUn, TVn, TWn are provided on the circuit board in a row. In the circuit board, U-phase drive IC70U, V-phase drive IC70V, and W-phase drive IC70W are provided in a row near U-phase connection portion TUn, V-phase connection portion TVn, and W-phase connection portion TWn. Further, a transformer 140 including the secondary side coil 71 is provided on the circuit board.

A negative voltage power supply 74 is provided between the V-phase connection portion TVn and the W-phase connection portion TWn in the circuit substrate.

According to the present embodiment described above, the following can be avoided: the length of the electrical path from the negative terminal of the negative voltage power supply 74 to the ground terminal of the V-phase drive IC70V, the length of the electrical path from the negative terminal of the negative voltage power supply 74 to the ground terminal of the U-phase drive IC70V, and the length of the electrical path from the negative terminal of the negative voltage power supply 74 to the ground terminal of the W-phase drive IC70W are respectively largely different. This suppresses a decrease in the negative voltage supplied to the gates of the U-phase lower arm switch SUn, the V-phase lower arm switch SVn, and the W-phase lower arm switch SWn.

< modification of the eighth embodiment >

When the negative voltage power supply 74 is incorporated in the V-phase drive IC70V as in the second embodiment, the negative voltage power supply 74 is disposed at the position shown in fig. 13 (b).

< ninth embodiment >

The ninth embodiment will be described below mainly focusing on differences from the eighth embodiment with reference to the drawings. In the present embodiment, as shown in fig. 14, the negative voltage power supply of the lower arm step-up switch Scn is also shared. In fig. 14, for convenience, the same components as those shown in fig. 12 are denoted by the same reference numerals.

As shown in fig. 14, a driver IC70c, a smoothing capacitor 73c, and a capacitor 75c are provided as a configuration corresponding to the lower arm boost switch Scn.

Fig. 15 (a) is a front view of the board surface of the circuit board of the inverter 30. In fig. 15, for convenience, the same components as those shown in fig. 13 are denoted by the same reference numerals.

The circuit board is provided with a boosting connection part Tcn to which the gate of the lower arm boosting switch Scn is connected. A driver IC70c for driving the lower arm boost switch Scn is provided near the boost connection portion Tcn on the circuit board. A negative voltage power supply 74 is provided between the V-phase connection portion TVn and the W-phase connection portion TWn in the circuit substrate.

According to the present embodiment described above, the same effects as those of the first and eighth embodiments can be achieved.

< modification of the ninth embodiment >

When the negative voltage power supply 74 is incorporated in the V-phase drive IC70V as in the second embodiment, the negative voltage power supply 74 is disposed at the position shown in fig. 15 (b).

< other embodiments >

The above embodiments may be modified as follows.

In each phase, the upper and lower arm switches may constitute one module, not only together, but also separately.

As shown in fig. 16, capacitors 66U, 66V, 66W, 76U, 76V, and 76W may be provided to supply gate charges when the switches are switched to the on state. This is a structure adopted to separate the capacitors 63U, 63V, 63W, 73U, 73V, 73W from the gates of the switches SUp, SVp, SWp, SUn, SVn, SWn. In fig. 16, for convenience, the same components as those shown in fig. 2 are denoted by the same reference numerals. In the vicinity of U-phase lower arm switch SUn, a charge supply path from capacitor 76U to the gate is indicated by a broken arrow.

Although the present disclosure has been described based on the embodiments, it should be understood that the present disclosure is not limited to the embodiments and configurations described above. The present disclosure also includes various modifications and variations within an equivalent range. In addition, various combinations and modes, including only one element, one or more other combinations and modes, also belong to the scope and the idea of the present disclosure.