阅读说明：本技术 一种基于阻变器件的神经元树突的操作方法及装置 (Neuron dendrite operation method and device based on resistive switching device ) 是由 刘力锋 伊亚玎 丁向向 冯玉林 黄鹏 康晋锋 张兴 于 2021-06-30 设计创作，主要内容包括：本发明提供一种基于阻变器件的神经元树突的操作方法及装置,其中方法包括：确定单个阻变器件的神经元树突结构；其中,所述神经元树突结构包括顶电极、阻变介质层和底电极；基于所述阻变器件固有的阈值电压对所述神经元树突结构的顶电极和底电极进行外加电压：当外加电压超过所述阈值电压时,通过所述外加电压使得所述神经元树突结构的阻变介质层形成导电通道,以实现非线性信号整流；在所述神经元树突结构的阻变介质层形成的导电通道处于断开状态下,当外加电压不超过所述阈值电压时,通过所述外加电压使得所述神经元树突结构的阻变介质层无法形成导电通道,以实现噪声信号的过滤。本发明实现了神经形态计算时功耗降低及计算灵活性提升。(The invention provides a method and a device for operating neuron dendrites based on a resistance change device, wherein the method comprises the following steps: determining a neuron dendritic structure of a single resistive device; the neuron dendritic structure comprises a top electrode, a resistance change medium layer and a bottom electrode; applying voltage to the top electrode and the bottom electrode of the neuron dendritic structure based on the inherent threshold voltage of the resistance change device: when the external voltage exceeds the threshold voltage, the resistance change medium layer of the neuron dendritic structure forms a conductive channel through the external voltage so as to realize nonlinear signal rectification; when the conductive channel formed by the resistance change medium layer of the neuron dendrite structure is in a disconnected state, when the applied voltage does not exceed the threshold voltage, the resistance change medium layer of the neuron dendrite structure cannot form the conductive channel through the applied voltage, so that the filtering of noise signals is realized. The invention realizes the reduction of power consumption and the improvement of calculation flexibility during the calculation of the neuromorphic.)

1. An operation method of a neuron dendrite based on a resistance change device is characterized by comprising the following steps:

determining a neuron dendritic structure of a single resistive device; the neuron dendritic structure comprises a top electrode, a resistance change medium layer and a bottom electrode;

applying voltage to the top electrode and the bottom electrode of the neuron dendritic structure based on the inherent threshold voltage of the resistance change device:

when the external voltage exceeds the threshold voltage, the resistance change medium layer of the neuron dendritic structure forms a conductive channel through the external voltage so as to realize nonlinear signal rectification;

when the conductive channel formed by the resistance change medium layer of the neuron dendrite structure is in a disconnected state, when the applied voltage does not exceed the threshold voltage, the resistance change medium layer of the neuron dendrite structure cannot form the conductive channel through the applied voltage, so that the filtering of noise signals is realized.

2. The method for operating the neuron dendrites based on the resistive switching device according to claim 1, wherein when an applied voltage exceeds the threshold voltage, the resistance of the resistive switching medium layer as the resistive switching device is reduced; when the external voltage does not exceed the threshold voltage, the resistance of the resistance change dielectric layer as a resistance change device is reduced slightly; when the external voltage is removed, the resistor is recovered;

the external voltage for realizing the nonlinear signal rectification comprises half sharp pulse voltage, mixed pulse voltage, sharp pulse voltage, rectangular pulse voltage or continuous rectangular pulse voltage;

the applied voltage to effect filtering of the noise signal comprises an inactive rectangular pulse voltage, an active rectangular pulse voltage, or an active composite pulse voltage.

3. The method for operating the neuron dendrites based on the resistive switching device according to claim 2, wherein when the applied voltage is a half-cusp pulse voltage, a linear change of the half-cusp pulse voltage conforms to a linear equation of two-dimentional system as follows:

aT+bV+c＝0(a,b≠0)；

wherein, a, b and c represent self-defining parameters, T represents time, and V represents voltage.

4. The method for operating the neuron dendrites based on the resistive switching device according to claim 2, wherein when the applied voltage is a mixed pulse voltage, a sharp pulse voltage, a rectangular pulse voltage or a continuous rectangular pulse voltage, a value range of a voltage on the resistive switching device satisfies the following condition:

V_th＜V_apply＜V_limit；

wherein, V_limitIndicating breakdown voltage, V, of resistive switching device_applyRepresenting the voltage, V, applied across the resistive switching device_thRepresenting the threshold voltage.

5. The method for operating the neuron dendrites based on the resistive switching device according to claim 2, wherein an external voltage including an inactive rectangular pulse voltage, an active rectangular pulse voltage or an active mixed pulse voltage, which implements filtering of noise signals, causes a set phenomenon of starting conductive channels to occur before and after a threshold voltage: before the set phenomenon occurs, a conductive channel is not formed, small pulse amplitude serving as a noise signal cannot pass through the resistance change device, and after the set phenomenon occurs, a stable conductive channel is established to enable the noise signal to pass through;

wherein, the pulse signal with the maximum pulse amplitude smaller than the threshold voltage in one pulse period of the non-activated rectangular pulse voltage is filtered as a noise signal and does not cause the nonlinear change of the current;

after the rising edge pulse of the voltage of the activated rectangular pulse stimulates the forming of the conductive channel, the current caused by the noise signal presents a nonlinear increasing trend, and the nonlinear increasing trend presents a decreasing trend;

the active mixed pulse voltage comprises rectangular pulses and half-sharp noise signals; after the rectangular pulse stimulates a conductive channel of the resistance change device, a semi-sharp noise signal is applied to the resistance change device to cause the current to show a nonlinear increasing trend.

6. The operating device of the neuron dendrite based on the resistance change device is characterized by comprising a neuron dendrite structure of a single resistance change device and a voltage unit; the neuron dendritic structure comprises a top electrode, a resistance change medium layer and a bottom electrode;

the voltage unit is used for applying voltage to the top electrode and the bottom electrode of the neuron dendritic structure based on the inherent threshold voltage of the resistance change device: when the external voltage exceeds the threshold voltage, the resistance change medium layer of the neuron dendritic structure forms a conductive channel through the external voltage so as to realize nonlinear signal rectification; when the conductive channel formed by the resistance change medium layer of the neuron dendrite structure is in a disconnected state, when the applied voltage does not exceed the threshold voltage, the resistance change medium layer of the neuron dendrite structure cannot form the conductive channel through the applied voltage, so that the filtering of noise signals is realized.

7. The device for operating the neuron dendrites based on the resistive switching device according to claim 6, wherein when an applied voltage exceeds the threshold voltage, the resistance of the resistive switching medium layer as the resistive switching device is reduced; when the external voltage does not exceed the threshold voltage, the resistance of the resistance change dielectric layer as a resistance change device is reduced slightly; when the external voltage is removed, the resistor is recovered;

when nonlinear signal rectification is realized, the external voltage output by the voltage unit comprises half sharp pulse voltage, mixed pulse voltage, sharp pulse voltage, rectangular pulse voltage or continuous rectangular pulse voltage;

when the filtering of the noise signal is realized, the external voltage output by the voltage unit comprises an inactivated rectangular pulse voltage, an activated rectangular pulse voltage or an activated mixed pulse voltage.

8. The apparatus for operating the neuron dendrite based on the resistive switching device according to claim 7, wherein when the applied voltage output by the voltage unit is a half-cusp pulse voltage, a linear change of the half-cusp pulse voltage conforms to a linear equation of two-fold as follows:

aT+bV+c＝0(a,b≠0)；

wherein, a, b and c represent self-defining parameters, T represents time, and V represents voltage.

9. The device for operating the neuron dendrites based on the resistive switching device according to claim 7, wherein when the applied voltage output by the voltage unit is a mixed pulse voltage, a sharp pulse voltage, a rectangular pulse voltage or a continuous rectangular pulse voltage, a range of values of a voltage on the resistive switching device satisfies the following condition:

V_th＜V_apply＜V_limit；

wherein, V_limitIndicating breakdown voltage, V, of resistive switching device_applyRepresenting the voltage, V, applied across the resistive switching device_thRepresenting the threshold voltage.

10. The device for operating the neuron dendrites based on the resistive switching device according to claim 7, wherein when filtering of noise signals is implemented, an external voltage including an inactive rectangular pulse voltage, an active rectangular pulse voltage or an active mixed pulse voltage outputted by the voltage unit enables a set phenomenon of a starting conductive channel to occur before and after a threshold voltage: before the set phenomenon occurs, a conductive channel is not formed, small pulse amplitude serving as a noise signal cannot pass through the resistance change device, and after the set phenomenon occurs, a stable conductive channel is established to enable the noise signal to pass through;

wherein, the pulse signal with the maximum pulse amplitude smaller than the threshold voltage in one pulse period of the non-activated rectangular pulse voltage is filtered as a noise signal and does not cause the nonlinear change of the current;

after the rising edge pulse of the voltage of the activated rectangular pulse stimulates the forming of the conductive channel, the current caused by the noise signal presents a nonlinear increasing trend, and the nonlinear increasing trend presents a decreasing trend;

the active mixed pulse voltage comprises rectangular pulses and half-sharp noise signals; after the rectangular pulse stimulates a conductive channel of the resistance change device, a semi-sharp noise signal is applied to the resistance change device to cause the current to show a nonlinear increasing trend.

Technical Field

The invention relates to the technical field of semiconductor devices, in particular to a neuron dendrite operation method and device based on a resistance change device.

Background

With the development of artificial intelligence technology, neural networks are widely applied in the fields of computer vision, speech recognition and the like, but the increasingly huge networks and the calculation scale thereof make it necessary to optimize the power consumption of the current hardware system.

Neuromorphic computing is a method of emulating animal neurons to perform neural network reasoning. Compared with the traditional neural network, the neuromorphic computing has higher computing flexibility and lower low power consumption, and becomes a research hotspot of the current industry and academia. Most designs for dendrites in neuromorphic calculation currently use CMOS or complex resistive random access memory arrays, and when the methods are used for realizing the dendrite function of the neuromorphic calculation, the power consumption is high, and the calculation flexibility is poor.

Disclosure of Invention

The embodiment of the invention provides a method and a device for operating a neuron dendrite based on a resistance change device, which are used for solving the problems of higher power consumption and poorer computing flexibility when the dendrite function of neuromorphic computation is realized at present.

In a first aspect, an embodiment of the present invention provides an operation method of a neuron dendrite based on a resistive switching device, including:

determining a neuron dendritic structure of a single resistive device; the neuron dendritic structure comprises a top electrode, a resistance change medium layer and a bottom electrode;

applying voltage to the top electrode and the bottom electrode of the neuron dendritic structure based on the inherent threshold voltage of the resistance change device:

when the external voltage exceeds the threshold voltage, the resistance change medium layer of the neuron dendritic structure forms a conductive channel through the external voltage so as to realize nonlinear signal rectification;

when the conductive channel formed by the resistance change medium layer of the neuron dendrite structure is in a disconnected state, when the applied voltage does not exceed the threshold voltage, the resistance change medium layer of the neuron dendrite structure cannot form the conductive channel through the applied voltage, so that the filtering of noise signals is realized.

Preferably, when the applied voltage exceeds the threshold voltage, the resistance of the resistance change dielectric layer as a resistance change device is reduced; when the external voltage does not exceed the threshold voltage, the resistance of the resistance change dielectric layer as a resistance change device is reduced slightly; when the external voltage is removed, the resistor is recovered;

the external voltage for realizing the nonlinear signal rectification comprises half sharp pulse voltage, mixed pulse voltage, sharp pulse voltage, rectangular pulse voltage or continuous rectangular pulse voltage;

the applied voltage to effect filtering of the noise signal comprises an inactive rectangular pulse voltage, an active rectangular pulse voltage, or an active composite pulse voltage.

Preferably, when the applied voltage is a half-cusp pulse voltage, the linear change of the half-cusp pulse voltage conforms to the following linear equation of two-fold equation:

aT+bV+c＝0(a,b≠0)；

wherein, a, b and c represent self-defining parameters, T represents time, and V represents voltage.

Preferably, when the applied voltage is a mixed pulse voltage, a sharp pulse voltage, a rectangular pulse voltage or a continuous rectangular pulse voltage, a value range of a voltage magnitude on the resistive switching device meets the following condition:

V_th＜V_apply＜V_limit；

wherein, V_limitIndicating breakdown voltage, V, of resistive switching device_applyRepresenting the voltage, V, applied across the resistive switching device_thRepresenting the threshold voltage.

Preferably, the external voltage including the non-activated rectangular pulse voltage, the activated rectangular pulse voltage or the activated mixed pulse voltage for filtering the noise signal enables the start conduction channel set phenomenon to occur before and after the threshold voltage: before the set phenomenon occurs, a conductive channel is not formed, small pulse amplitude serving as a noise signal cannot pass through the resistance change device, and after the set phenomenon occurs, a stable conductive channel is established to enable the noise signal to pass through;

wherein, the pulse signal with the maximum pulse amplitude smaller than the threshold voltage in one pulse period of the non-activated rectangular pulse voltage is filtered as a noise signal and does not cause the nonlinear change of the current;

after the rising edge pulse of the voltage of the activated rectangular pulse stimulates the forming of the conductive channel, the current caused by the noise signal presents a nonlinear increasing trend, and the nonlinear increasing trend presents a decreasing trend;

the active mixed pulse voltage comprises rectangular pulses and half-sharp noise signals; after the rectangular pulse stimulates a conductive channel of the resistance change device, a semi-sharp noise signal is applied to the resistance change device to cause the current to show a nonlinear increasing trend.

In a second aspect, the operating apparatus for a neuron dendrite based on a resistive switching device provided by the embodiment of the present invention includes a neuron dendrite structure of a single resistive switching device and a voltage unit; the neuron dendritic structure comprises a top electrode, a resistance change medium layer and a bottom electrode;

the voltage unit is used for applying voltage to the top electrode and the bottom electrode of the neuron dendritic structure based on the inherent threshold voltage of the resistance change device: when the external voltage exceeds the threshold voltage, the resistance change medium layer of the neuron dendritic structure forms a conductive channel through the external voltage so as to realize nonlinear signal rectification; when the conductive channel formed by the resistance change medium layer of the neuron dendrite structure is in a disconnected state, when the applied voltage does not exceed the threshold voltage, the resistance change medium layer of the neuron dendrite structure cannot form the conductive channel through the applied voltage, so that the filtering of noise signals is realized.

Preferably, when the applied voltage exceeds the threshold voltage, the resistance of the resistance change dielectric layer as a resistance change device is reduced; when the external voltage does not exceed the threshold voltage, the resistance of the resistance change dielectric layer as a resistance change device is reduced slightly; when the external voltage is removed, the resistor is recovered;

when nonlinear signal rectification is realized, the external voltage output by the voltage unit comprises half sharp pulse voltage, mixed pulse voltage, sharp pulse voltage, rectangular pulse voltage or continuous rectangular pulse voltage;

when the filtering of the noise signal is realized, the external voltage output by the voltage unit comprises an inactivated rectangular pulse voltage, an activated rectangular pulse voltage or an activated mixed pulse voltage.

Preferably, when the applied voltage output by the voltage unit is a half-cusp pulse voltage, the linear change of the half-cusp pulse voltage conforms to the following linear equation of two-fold system:

aT+bV+c＝0(a,b≠0)；

wherein, a, b and c represent self-defining parameters, T represents time, and V represents voltage.

Preferably, when the external voltage output by the voltage unit is a mixed pulse voltage, a sharp pulse voltage, a rectangular pulse voltage or a continuous rectangular pulse voltage, a value range of a voltage magnitude on the resistive switching device meets the following condition:

V_th＜V_apply＜V_limit；

wherein, V_limitIndicating breakdown voltage, V, of resistive switching device_applyRepresenting the voltage, V, applied across the resistive switching device_thRepresenting the threshold voltage.

Preferably, when the noise signal is filtered, the voltage unit outputs an external voltage including a non-activated rectangular pulse voltage, an activated rectangular pulse voltage or an activated mixed pulse voltage, so that a phenomenon of starting the conductive channel set occurs before and after the threshold voltage: before the set phenomenon occurs, a conductive channel is not formed, small pulse amplitude serving as a noise signal cannot pass through the resistance change device, and after the set phenomenon occurs, a stable conductive channel is established to enable the noise signal to pass through;

wherein, the pulse signal with the maximum pulse amplitude smaller than the threshold voltage in one pulse period of the non-activated rectangular pulse voltage is filtered as a noise signal and does not cause the nonlinear change of the current;

after the rising edge pulse of the voltage of the activated rectangular pulse stimulates the forming of the conductive channel, the current caused by the noise signal presents a nonlinear increasing trend, and the nonlinear increasing trend presents a decreasing trend;

the active mixed pulse voltage comprises rectangular pulses and half-sharp noise signals; after the rectangular pulse stimulates a conductive channel of the resistance change device, a semi-sharp noise signal is applied to the resistance change device to cause the current to show a nonlinear increasing trend.

The method comprises the steps of determining a neuron dendrite structure of a single resistance change device, and applying external voltage to a top electrode and a bottom electrode of the neuron dendrite structure based on the inherent threshold voltage of the resistance change device, namely an operation method of rectifying nonlinear signals before and after the threshold voltage of the neuron dendrite structure based on the resistance change device and filtering noise signals before the threshold voltage. The invention realizes the reduction of power consumption and the improvement of calculation flexibility when the dendritic function is calculated by the neuromorphic calculation method.

Drawings

In order to more clearly illustrate the technical solutions of the present invention or the prior art, the drawings needed for the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and those skilled in the art can also obtain other drawings according to the drawings without creative efforts.

Fig. 1 is a schematic flow chart of an operation method of a neuron dendrite based on a resistive device provided by the invention;

fig. 2 is a schematic diagram of a neuron dendrite structure of a single resistive switching device provided by the invention;

FIG. 3 is a schematic diagram of the operation of half-spike pulses for non-linear signal rectification before and after threshold voltage provided by the present invention;

FIG. 4 is a schematic diagram of the mixed pulse operation of the nonlinear signal rectification before and after the threshold voltage provided by the present invention;

FIG. 5 is a schematic diagram of the operation of the spike pulses for non-linear signal rectification before and after threshold voltage provided by the present invention;

FIG. 6 is a schematic diagram of the operation of rectangular pulses for non-linear signal rectification before and after threshold voltage provided by the present invention;

FIG. 7 is a schematic diagram of the continuous square pulse operation of nonlinear signal rectification before and after threshold voltage provided by the present invention;

FIG. 8 is a schematic diagram of the filtered inactive square pulse operation of the pre-threshold voltage noise signal provided by the present invention;

FIG. 9 is a schematic diagram of the filtered active square pulse operation of the pre-threshold voltage noise signal provided by the present invention;

FIG. 10 is a schematic diagram of the filtered pre-threshold voltage noise signal active blended pulse operation provided by the present invention;

fig. 11 is a schematic structural diagram of an operating device of a neuron dendrite based on a resistive switching device according to the present invention;

reference numerals:

1: a top electrode; 2: a resistance change medium layer; 3: a bottom electrode; 4: a conductive path.

Detailed Description

In order to make the objects, technical solutions and advantages of the present invention clearer, the technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings, and it is obvious that the described embodiments are some, but not all embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.

The following describes an operation method and an apparatus of a neuron dendrite based on a resistive device, provided by the invention, with reference to fig. 1 to 11.

The embodiment of the invention provides an operation method of a neuron dendrite based on a resistance change device. Fig. 1 is a schematic flow chart of an operation method of a neuron dendrite based on a resistive switching device according to an embodiment of the present invention, as shown in fig. 1, the method includes:

step 110, determining a neuron dendritic structure of a single resistive switching device; the neuron dendritic structure comprises a top electrode, a resistance change medium layer and a bottom electrode;

specifically, as shown in fig. 2, a schematic diagram of a neuron dendrite structure based on a single resistive switching device is shown, and a sandwich structure of a top electrode 1, a resistive switching medium layer 2, and a bottom electrode 3 is adopted.

Step 120, with reference to fig. 2, applying an external voltage to the top electrode 1 and the bottom electrode 3 of the neuron dendritic structure based on the inherent threshold voltage of the resistive switching device: when the external voltage exceeds the threshold voltage, the resistive switching medium layer 2 of the neuron dendritic structure forms a conductive channel 4 through the external voltage so as to realize nonlinear signal rectification; when the conductive channel 4 formed by the resistance change medium layer 2 of the neuron dendrite structure is in a disconnected state, and when an external voltage does not exceed the threshold voltage, the resistance change medium layer 2 of the neuron dendrite structure cannot form 4 conductive channels through the external voltage, so that the filtering of noise signals is realized.

Specifically, the conductive channel is formed under the action that the applied voltage exceeds the threshold voltage of the device, the function of the conductive channel is to provide a carrier channel, the resistance of the resistive switching device is reduced, the conductive channel can be damaged by applying reverse voltage, and therefore the resistance of the resistive switching device is improved. Nonlinear signal rectification before and after threshold voltage of neuron dendrites based on the resistive device and filtering of noise signals before the threshold voltage are based on the connection and disconnection of channels, and the connection and disconnection processes of the channels do not contribute linearly to the conductive capacity, so that the current response of the neuron dendrites under the action of linear voltage is characterized as nonlinear, and the nonlinear rectification process is further realized. When the conductive channel is in a disconnected state, the signal lower than the threshold voltage cannot pass through, and then the filtering of the noise signal is realized.

According to the operation method provided by the embodiment of the invention, the neuron dendrite is designed by using the single resistance change device, and the neuron dendrite is operated under a certain controllable limited condition, so that the main function of the dendrite can be realized, and meanwhile, the operation method can obtain better effects in the aspects of the complexity, the calculation flexibility and the power consumption of the structure of the device compared with a complex structure.

Based on any one of the above embodiments, when the applied voltage exceeds the threshold voltage, the resistance of the resistive switching medium layer as a resistive switching device is reduced; when the external voltage does not exceed the threshold voltage, the resistance of the resistance change dielectric layer as a resistance change device is reduced slightly; when the external voltage is removed, the resistor is recovered;

specifically, the method is realized by applying pulse voltage signals before and after threshold voltage to the resistive device. The invention uses positive pulse as top electrode connected with positive voltage and bottom electrode connected with negative voltage, thus forming applied voltage.

The external voltage for realizing the nonlinear signal rectification comprises half sharp pulse voltage, mixed pulse voltage, sharp pulse voltage, rectangular pulse voltage or continuous rectangular pulse voltage;

specifically, in the process of integrating nonlinear signals before and after the threshold voltage, Vth (threshold voltage of the resistive switching device) of the forward pulse is a more obvious boundary, the device is in an off state (HRS) before the amplitude of the forward pulse is smaller than Vth by the limit, the response of current to voltage is weak and negligible, and when the amplitude of the forward pulse crosses Vth, the device is stimulated to form a conductive channel, and a set (resistance value reduction) phenomenon occurs. When a negative pulse is applied, the conductive channel is gradually destroyed, and reset (resistance rise) occurs. Fig. 3, 4, 5, 6 and 7 are schematic diagrams of application schemes of voltage pulse signals of neuron dendrites based on a resistance change device, and nonlinear integration functions in dendrites can be realized through the operation schemes.

The applied voltage to effect filtering of the noise signal comprises an inactive rectangular pulse voltage, an active rectangular pulse voltage, or an active composite pulse voltage.

Specifically, the invention discloses an operation scheme of a filtering function of a noise signal before a neuron dendrite threshold voltage based on a resistance change device, which is realized by applying the same pulse voltage signal before and after the threshold voltage to the resistance change device.

It should be noted that the current versus voltage response range set by the present invention is in the order of microamperes to milliamperes. Currents below microampere level are not easily captured, and currents above milliamp level cannot be carried by smaller devices. Particularly, continuous or discontinuous rectangular voltage pulses, semi-sharp voltage pulses and trapezoidal voltage pulses with different pulse widths, pulse amplitudes and pulse periods are used according to the resistance value change range of the device and the threshold voltage, so that the dendrite can effectively realize nonlinear signal rectification before and after the threshold voltage and noise signal filtration before the threshold voltage.

Based on any of the above embodiments, when the applied voltage is a half-cusp pulse voltage, the linear change of the half-cusp pulse voltage conforms to the following linear equation of two-fold equation:

aT+bV+c＝0(a,b≠0)；

wherein, a, b and c represent self-defining parameters, T represents time, and V represents voltage.

Specifically, as shown in fig. 3, in the semi-spike pulse voltage operation method, the current between t1 and t3 shows a non-linear increasing trend with respect to the linear increase of the voltage, and the current change curve is similar to an exponential function form. the trend of the nonlinear increase of the current between t1 and t2 is smaller than that between t2 and t 3. Wherein time t2 indicates that the complete conductive path is established. the linear variation of the half-cusp voltage pulses between T1 and T2 follows the following equation of a two-dimensional equation, where a, b, and c represent custom parameters, T represents time, and V represents voltage.

aT+bV+c＝0(a,b≠0)

Based on any of the above embodiments, when the applied voltage is a mixed pulse voltage, a sharp pulse voltage, a rectangular pulse voltage, or a continuous rectangular pulse voltage, the value range of the voltage magnitude on the resistive switching device satisfies the following conditions:

V_th＜V_apply＜V_limit；

wherein, V_limitIndicating breakdown voltage, V, of resistive switching device_applyIndicating application to resistive switching devicesVoltage, V_thRepresenting the threshold voltage.

Specifically, in the mixed pulse voltage operation method shown in fig. 4, the nonlinear trend of the current before the time t3 is the same as that in fig. 3, and the response of the current to the voltage at the stage t3 to t4 shows a nonlinear increasing trend, but the increasing trend shows a gradually decreasing trend, and the current change curve thereof is similar to a logarithmic function.

In the mixed pulse voltage operation method shown in fig. 4, the range of the voltage applied to the device from the stage t3 to the stage t4 satisfies the following condition, where V is_limitIndicating the breakdown voltage, V, of the device_applyRepresents the voltage applied to the device:

V_th＜V_apply＜V_limit

in the spike pulse voltage operation method shown in fig. 5, the nonlinear trend of the current before the time t3 is the same as that in fig. 3, and the response of the current to the voltage in the period from t3 to t4 shows a nonlinear decreasing trend, but the decreasing trend shows a gradually decreasing trend, and the current change curve is similar to a power function form.

In the spike pulse voltage operation method shown in fig. 5, the voltage at time t3 has the following value ranges:

V_th＜V_apply＜V_limit

in the square pulse voltage operation method shown in fig. 6, the current between t1 and t3 shows a non-linear increasing trend, and the non-linear increasing trend shows a decreasing trend. the trend of the nonlinear increase between t1 and t2 shows a decreasing trend which is smaller than the trend of the decrease between t2 and t3, and the current change curve is similar to a logarithmic function form. time t2 indicates that the establishment of the conductive path of the device is substantially complete.

The rectangular pulse voltage operation method shown in fig. 6 has a pulse amplitude satisfying the following conditions:

V_th＜V_apply＜V_limit

in the continuous square pulse voltage operation method shown in fig. 7, the current in one period has a non-linear increasing trend similar to that in fig. 6, but the current at the rising edge of the next period is slightly lower than the current before the falling edge of the period. The pulse amplitude conditions are also the same as in fig. 6.

Based on any of the above embodiments, the external voltage including the non-activated rectangular pulse voltage, the activated rectangular pulse voltage, or the activated mixed pulse voltage, which implements the filtering of the noise signal, causes the start conduction channel set phenomenon to occur before and after the threshold voltage: before the set phenomenon occurs, a conductive channel is not formed, small pulse amplitude serving as a noise signal cannot pass through the resistance change device, and after the set phenomenon occurs, a stable conductive channel is established to enable the noise signal to pass through;

specifically, a small pulse amplitude is adopted as a noise signal for a filtering function of a noise signal before a neuron dendrite threshold voltage of the resistance change device. Before the set phenomenon occurs, a noise signal cannot form a conductive channel and no formed conductive channel allows the noise signal to pass through, so that the noise signal cannot pass through the device.

Wherein, the pulse signal with the maximum pulse amplitude smaller than the threshold voltage in one pulse period of the non-activated rectangular pulse voltage is filtered as a noise signal and does not cause the nonlinear change of the current;

specifically, as shown in fig. 8, in the operation method of the non-active rectangular pulse voltage, the pulse signal whose maximum pulse amplitude is smaller than the threshold voltage in one pulse period is defined as a noise signal, and the noise signals may be equal or unequal. These noise signals are filtered, but the response of the current to the voltage is not zero, but rather a very weak electrical signal, which exhibits irregular fluctuation and causes no non-linear change in the current, no matter how much the noise signal is.

After the rising edge pulse of the voltage of the activated rectangular pulse stimulates the forming of the conductive channel, the current caused by the noise signal presents a nonlinear increasing trend, and the nonlinear increasing trend presents a decreasing trend;

specifically, as shown in fig. 9, in the operation method with the active rectangular pulse voltage, the rising edge pulse at time t5 stimulates the formation of the conductive channel, and then the noise signal starting at time t7 causes the current to show a non-linear increasing trend, and the non-linear increasing trend shows a decreasing trend. The same noise signal is applied after time t7, and if the waveforms of the two noise signals are the same, the current response curves are also the same.

The active mixed pulse voltage comprises rectangular pulses and half-sharp noise signals; after the rectangular pulse stimulates a conductive channel of the resistance change device, a semi-sharp noise signal is applied to the resistance change device to cause the current to show a nonlinear increasing trend.

Specifically, as shown in fig. 10, in the operation method of activating the mixed pulse voltage, the noise signal may induce a minute current that tends to rise, but no stable nonlinear current is generated no matter how much noise signal is applied. When the rectangular pulses from t5 to t6 stimulate the formation of a conductive channel of the resistive switching device, a half-sharp noise signal is applied to the resistive switching device to cause the current to show a nonlinear increasing trend, and the nonlinear increasing trend shows an expression trend.

It should be noted that the operation method for rectifying the nonlinear signal before and after the threshold voltage of the neuron dendrite based on the resistive switching device and filtering the noise signal before the threshold voltage is not limited to the operation method already proposed. In the operation method of the neuron dendrite threshold voltage front and back nonlinear signal rectification based on the resistive switching device, all the requirements that the maximum amplitude of the pulse voltage exceeds the threshold voltage can be met, the nonlinear change of current to voltage can be realized after the threshold voltage, and the pulse voltage can be used as an alternative scheme no matter whether the pulse voltage is a positive pulse or a negative pulse. In the operation method for filtering the noise signals before the threshold voltage, all the noise signals are filtered before the pulse larger than the threshold voltage appears, and all the noise signals urge the generation of the nonlinear current after the pulse larger than the threshold voltage appears.

The operation device of the neuron dendrite based on the resistance change device provided by the invention is described below, and the following description and the above-described operation method of the neuron dendrite based on the resistance change device can be referred to correspondingly.

Fig. 11 is a schematic structural diagram of an operating apparatus of a neuron dendrite based on a resistive switching device according to an embodiment of the present invention, as shown in fig. 11, the apparatus includes a neuron dendrite structure 1110 of a single resistive switching device and a voltage unit 1120; the neuron dendritic structure 1110 comprises a top electrode, a resistance change medium layer and a bottom electrode;

the voltage unit 1120 is configured to apply an external voltage to the top electrode and the bottom electrode of the neuron dendritic structure 1110 based on a threshold voltage inherent to the resistance change device: when the applied voltage exceeds the threshold voltage, the resistive switching medium layer of the neuron dendritic structure 1110 forms a conductive channel through the applied voltage, so as to realize nonlinear signal rectification; when the conductive channel formed by the resistive switching medium layer of the neuron dendritic structure 1110 is in an off state, and when an external voltage does not exceed the threshold voltage, the resistive switching medium layer of the neuron dendritic structure 1110 cannot form the conductive channel through the external voltage, so that filtering of a noise signal is realized.

According to the operating device provided by the embodiment of the invention, the neuron dendrite is designed by using a single resistive device, and the neuron dendrite is operated under a certain controllable limited condition, so that the main function of the dendrite can be realized, and meanwhile, the operating device can obtain better effects in the aspects of the complexity, the calculation flexibility and the power consumption of the device structure compared with a complex structure.

Based on any one of the above embodiments, when the applied voltage exceeds the threshold voltage, the resistance of the resistive switching medium layer as a resistive switching device is reduced; when the external voltage does not exceed the threshold voltage, the resistance of the resistance change dielectric layer as a resistance change device is reduced slightly; when the external voltage is removed, the resistor is recovered;

when nonlinear signal rectification is realized, the external voltage output by the voltage unit comprises half sharp pulse voltage, mixed pulse voltage, sharp pulse voltage, rectangular pulse voltage or continuous rectangular pulse voltage;

when the filtering of the noise signal is realized, the external voltage output by the voltage unit comprises an inactivated rectangular pulse voltage, an activated rectangular pulse voltage or an activated mixed pulse voltage.

Based on any of the above embodiments, when the applied voltage output by the voltage unit is the half-cusp pulse voltage, the linear change of the half-cusp pulse voltage conforms to the following linear equation of two-dimentional system:

aT+bV+c＝0(a,b≠0)；

wherein, a, b and c represent self-defining parameters, T represents time, and V represents voltage.

Based on any of the above embodiments, when the applied voltage output by the voltage unit is a mixed pulse voltage, a sharp pulse voltage, a rectangular pulse voltage, or a continuous rectangular pulse voltage, the value range of the voltage magnitude on the resistive switching device meets the following conditions:

V_th＜V_apply＜V_limit；

wherein, V_limitIndicating breakdown voltage, V, of resistive switching device_applyRepresenting the voltage, V, applied across the resistive switching device_thRepresenting the threshold voltage.

Based on any of the above embodiments, when filtering the noise signal, the voltage unit outputs an external voltage including a non-activated rectangular pulse voltage, an activated rectangular pulse voltage, or an activated mixed pulse voltage, so that a start conduction channel set phenomenon occurs before and after a threshold voltage: before the set phenomenon occurs, a conductive channel is not formed, small pulse amplitude serving as a noise signal cannot pass through the resistance change device, and after the set phenomenon occurs, a stable conductive channel is established to enable the noise signal to pass through;

wherein, the pulse signal with the maximum pulse amplitude smaller than the threshold voltage in one pulse period of the non-activated rectangular pulse voltage is filtered as a noise signal and does not cause the nonlinear change of the current;

after the rising edge pulse of the voltage of the activated rectangular pulse stimulates the forming of the conductive channel, the current caused by the noise signal presents a nonlinear increasing trend, and the nonlinear increasing trend presents a decreasing trend;

the active mixed pulse voltage comprises rectangular pulses and half-sharp noise signals; after the rectangular pulse stimulates a conductive channel of the resistance change device, a semi-sharp noise signal is applied to the resistance change device to cause the current to show a nonlinear increasing trend.

The above-described embodiments of the apparatus are merely illustrative, and the units described as separate parts may or may not be physically separate, and parts displayed as units may or may not be physical units, may be located in one place, or may be distributed on a plurality of network units. Some or all of the modules may be selected according to actual needs to achieve the purpose of the solution of the present embodiment. One of ordinary skill in the art can understand and implement it without inventive effort.

Through the above description of the embodiments, those skilled in the art will clearly understand that each embodiment can be implemented by software plus a necessary general hardware platform, and certainly can also be implemented by hardware. With this understanding in mind, the above-described technical solutions may be embodied in the form of a software product, which can be stored in a computer-readable storage medium such as ROM/RAM, magnetic disk, optical disk, etc., and includes instructions for causing a computer device (which may be a personal computer, a server, or a network device, etc.) to execute the methods described in the embodiments or some parts of the embodiments.

Finally, it should be noted that: the above examples are only intended to illustrate the technical solution of the present invention, but not to limit it; although the present invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; and such modifications or substitutions do not depart from the spirit and scope of the corresponding technical solutions of the embodiments of the present invention.