阅读说明：本技术 加热器以及气溶胶生成装置 (Heater and aerosol-generating device ) 是由 戚祖强 罗家懋 雷宝灵 徐中立 李永海 于 2020-06-01 设计创作，主要内容包括：本申请提供了一种加热器以及气溶胶生成装置,所述加热器包括：基体；红外电热膜,形成在所述基体表面,所述红外电热膜含有掺杂氧化锡、且所述掺杂氧化锡的掺杂元素包含非金属元素；所述红外电热膜用于产生红外线并至少以辐射方式加热所述气溶胶形成基质；导电部,包括设置于所述基体上的第一电极和第二电极,所述第一电极和所述第二电极均与所述红外电热膜电性连接,以将电源的电功率馈送至所述红外电热膜。本申请在基体上形成且含有掺杂氧化锡的红外电热膜,掺杂氧化锡的掺杂元素有助于改善红外电热膜的导电性能和红外辐射效率；通过红外电热膜红外辐射加热气溶胶形成基质时,气溶胶形成基质的中心温度高,加热均匀,预热时间短。(The present application provides a heater and an aerosol-generating device, the heater comprising: a substrate; the infrared electrothermal film is formed on the surface of the substrate, the infrared electrothermal film contains doped tin oxide, and the doped elements of the doped tin oxide comprise nonmetal elements; the infrared electrothermal film is used for generating infrared rays and heating the aerosol-forming substrate at least in a radiation mode; and the conductive part comprises a first electrode and a second electrode which are arranged on the base body, and the first electrode and the second electrode are electrically connected with the infrared electrothermal film so as to feed electric power of a power supply to the infrared electrothermal film. The infrared electrothermal film is formed on the substrate and contains doped tin oxide, and the doped elements of the doped tin oxide are beneficial to improving the conductivity and the infrared radiation efficiency of the infrared electrothermal film; when the aerosol-forming substrate is heated by infrared radiation of the infrared electrothermal film, the central temperature of the aerosol-forming substrate is high, the heating is uniform, and the preheating time is short.)

1. A heater for heating an aerosol-forming substrate to volatilise at least one component of the aerosol-forming substrate; characterized in that the heater comprises:

a substrate;

the infrared electrothermal film is formed on the surface of the substrate, the infrared electrothermal film contains doped tin oxide, and the doped elements of the doped tin oxide comprise nonmetal elements; the infrared electrothermal film is used for generating infrared rays and heating the aerosol-forming substrate at least in a radiation mode;

and the conductive part comprises a first electrode and a second electrode which are arranged on the base body, and the first electrode and the second electrode are electrically connected with the infrared electrothermal film so as to feed electric power of a power supply to the infrared electrothermal film.

2. The heater of claim 1, wherein the non-metallic element comprises phosphorus.

3. A heater according to claim 2, wherein the atomic percentage of phosphorus is 5% to 9%, preferably 5% to 8.7%, more preferably 6% to 8.7%.

4. The heater of claim 1 or 2, wherein the non-metallic element further comprises carbon.

5. The heater of claim 4, wherein the atomic percentage of carbon is between 4% and 15%, preferably between 4% and 14.7%, and more preferably between 4.5% and 14.7%. Divided into two.

6. The heater of claim 4 or 5, wherein the non-metallic element further comprises calcium.

7. The heater of claim 6, wherein the calcium is present in an atomic percentage of 1% to 2%, preferably 1.2% to 1.8%, more preferably 1.2% to 1.6%, and even more preferably 1.4%.

8. A heater as claimed in any of claims 1 to 7, wherein the thickness of the infrared electrothermal film is 100nm to 30 μm, preferably 300nm to 3 μm, more preferably 500nm to 2 μm, and still more preferably 800nm to 1 μm.

9. The heater of any one of claims 1-8, wherein the square resistance (Ω/g) of the infrared electrothermal film is 0.3-35, preferably 1-30, more preferably 1-18, more preferably 1-14, more preferably 1-10, more preferably 1.5-10, more preferably 2-10, more preferably 3-10, more preferably 3.5-10.

10. The heater as claimed in any one of claims 1 to 9, wherein said infrared electrothermal film is formed on said substrate by physical vapor deposition or chemical vapor deposition.

11. The heater of any one of claims 1 to 10, wherein the first electrode and/or the second electrode comprises at least one of:

a conductive coating formed on the substrate;

and the conductive piece is sleeved on the base body.

12. The heater of any one of claims 1-11, wherein the substrate is made of a material selected from at least one of germanium single crystal, silicon single crystal, gallium arsenide, gallium phosphide, sapphire, aluminum oxide polycrystal, spinel, magnesium oxide, yttrium oxide, quartz, yttrium aluminum garnet, zinc sulfide, zinc selenide, silicon carbide, silicon nitride, magnesium fluoride, calcium fluoride, arsenic trisulfide.

13. An aerosol-generating device comprising a housing assembly and a heater as claimed in any one of claims 1 to 12; the heater is disposed within the housing assembly.

Technical Field

The present application relates to smoking set technology, and more particularly, to a heater and an aerosol generating device.

Background

Smoking articles such as cigarettes and cigars burn tobacco during use to produce an aerosol. Attempts have been made to provide alternatives to these tobacco-burning articles by creating products that release compounds without burning. An example of such a product is a so-called heat not burn product, which releases compounds by heating tobacco instead of burning tobacco.

The existing heating non-combustion smoking set mainly generates heat through a heating body, and conducts the heat to an aerosol generating substrate in a cavity, so that at least one component volatilizes to generate aerosol for a user to suck.

Disclosure of Invention

The application provides a heater and aerosol generates device aims at solving the not enough, inhomogeneous problem of heating of penetrability that exists when current smoking set heating aerosol generates the matrix.

In one aspect of the present application, a heater for heating an aerosol-forming substrate to volatilise at least one component of the aerosol-forming substrate; the heater includes:

a substrate;

the infrared electrothermal film is formed on the surface of the substrate, the infrared electrothermal film contains doped tin oxide, and the doped elements of the doped tin oxide comprise nonmetal elements; the infrared electrothermal film is used for generating infrared rays and heating the aerosol-forming substrate at least in a radiation mode;

and the conductive part comprises a first electrode and a second electrode which are arranged on the base body, and the first electrode and the second electrode are electrically connected with the infrared electrothermal film so as to feed electric power of a power supply to the infrared electrothermal film.

There is also provided in another aspect an aerosol-generating device comprising a housing assembly, and the heater; the heater is disposed within the housing assembly.

According to the heater and the aerosol generating device, the infrared electrothermal film doped with tin oxide is formed on the substrate, and the doped elements doped with tin oxide are beneficial to improving the conductivity and the infrared radiation efficiency of the infrared electrothermal film; when the aerosol-forming substrate is heated by infrared radiation of the infrared electrothermal film, the central temperature of the aerosol-forming substrate is high, the heating is uniform, and the preheating time is short.

Drawings

One or more embodiments are illustrated by way of example in the accompanying drawings, which correspond to the figures in which like reference numerals refer to similar elements and which are not to scale unless otherwise specified.

FIG. 1 is a schematic view of a heater provided by an embodiment of the present application;

FIG. 2 is a schematic SEM diagram of an infrared electrothermal film formed by a preparation process provided by an embodiment of the present application;

FIG. 3 is an XPS schematic diagram of an infrared electrothermal film formed by a manufacturing process provided by an embodiment of the present application;

FIG. 4 is a schematic temperature profile for infrared radiant heating and non-infrared radiant heating provided by embodiments of the present application;

FIG. 5 is another schematic illustration of a temperature profile for infrared radiant heating and non-infrared radiant heating provided by an embodiment of the present application;

FIG. 6 is an XPS schematic diagram of an infrared electrothermal film formed by another fabrication process provided in an embodiment of the present application;

figure 7 is a schematic diagram of an aerosol-generating device provided by an embodiment of the present application;

figure 8 is an exploded schematic view of an aerosol-generating device according to embodiments of the present application.

Detailed Description

To facilitate an understanding of the present application, the present application is described in more detail below with reference to the accompanying drawings and detailed description. It will be understood that when an element is referred to as being "secured to" another element, it can be directly on the other element or intervening elements may also be present. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may be present. The terms "upper", "lower", "left", "right", "inner", "outer" and the like as used herein are for illustrative purposes only.

Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used in the description of the present application is for the purpose of describing particular embodiments only and is not intended to be limiting of the present application. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.

Implementation mode one

Referring to fig. 1, in one embodiment of the present application there is provided a heater for infrared radiation heating an aerosol-forming substrate and vaporising at least one component of the aerosol-forming substrate to form an aerosol for consumption by a user; the heater 1 comprises a base 11, an infrared electrothermal film 12 and conductive parts (13, 14).

The substrate 11 is formed with a space containing the aerosol-forming substrate, the inner surface of the substrate 11 forming at least part of the boundary of the space. The base 11 has opposite first and second ends, the base 11 extending longitudinally between the first and second ends and being hollow internally to form a chamber adapted to receive an aerosol-forming substrate. The substrate 11 may be cylindrical, prismatic, or other cylindrical shape. The substrate 11 is preferably cylindrical and the chamber is a cylindrical bore extending through the centre of the substrate 11, the bore having an internal diameter slightly larger than the external diameter of the aerosol-forming article or smoking article, to facilitate heating of the aerosol-forming article or smoking article in the chamber.

The substrate 11 can be made of a material which is resistant to high temperature and has high infrared transmittance, and the material of the substrate 11 is selected from at least one of the following materials: germanium single crystal, silicon single crystal, gallium arsenide, gallium phosphide, sapphire, alumina polycrystal, spinel, magnesium oxide, yttrium oxide, quartz, yttrium aluminum garnet, zinc sulfide, zinc selenide, silicon carbide, silicon nitride, magnesium fluoride, calcium fluoride, arsenic trisulfide, and the like. Preferably, the material of the substrate 11 is selected from quartz.

An aerosol-forming substrate is a substrate capable of releasing volatile compounds that can form an aerosol. Such volatile compounds may be released by heating the aerosol-forming substrate. The aerosol-forming substrate may be solid or liquid or comprise solid and liquid components. The aerosol-forming substrate may be adsorbed, coated, impregnated or otherwise loaded onto a carrier or support. The aerosol-forming substrate may conveniently be part of an aerosol-generating article or a smoking article.

The aerosol-forming substrate may comprise nicotine. The aerosol-forming substrate may comprise tobacco, for example may comprise a tobacco-containing material containing volatile tobacco flavour compounds which are released from the aerosol-forming substrate when heated. Preferred aerosol-forming substrates may comprise homogenised tobacco material, for example deciduous tobacco. The aerosol-forming substrate may comprise at least one aerosol-former, which may be any suitable known compound or mixture of compounds which, in use, facilitates stable aerosol formation and is substantially resistant to thermal degradation at the operating temperature of the aerosol-generating system. Suitable aerosol-forming agents are well known in the art and include, but are not limited to: polyhydric alcohols such as triethylene glycol, 1, 3-butanediol and glycerin; esters of polyhydric alcohols, such as glycerol mono-, di-or triacetate; and fatty acid esters of mono-, di-or polycarboxylic acids, such as dimethyldodecanedioate and dimethyltetradecanedioate. Preferred aerosol formers are polyhydric alcohols or mixtures thereof, such as triethylene glycol, 1, 3-butanediol, and most preferably glycerol.

The infrared electrothermal film 12 is formed on the substrate 11 and contains doped tin oxide. The infrared electrothermal film 12 may be formed on the outer surface of the base 11 or may be formed on the inner surface of the base 11. The infrared electrothermal film 12 is preferably formed on the outer surface of the base 11.

Tin oxide (SnO2) is a very important metal oxide semiconductor material with a wide forbidden band (the forbidden band width is 3.7-4.3 eV). The common single crystal SnO2 is a tetragonal rutile structure, in a unit cell of tin oxide, Sn atoms are located in the center of oxygen octahedrons, and 6O atoms are around each Sn atom; similarly, 3 Sn atoms are attached around each O atom. The polycrystalline SnO2 film is composed of crystal grains with a tetragonal cassiterite structure or a tetragonal rutile structure, and the grown SnO2 film is prepared by a film process, wherein the preferred orientation of the crystal grains of the film has a close relation with parameters such as a crystal structure, a surface state, a growth temperature and the like of a substrate material.

The tin oxide is doped, usually with n-type doping and p-type doping.

p-type doping substitutes the position of Sn atom in the crystal lattice by doping +3 valent ions in the SnO2 thin film while providing 1 hole to the valence band. The constraint ability of the doped ions to the holes is weak, and the holes can become freely moving conductive holes in the crystal, so that the p-type doping of the semiconductor is realized.

Since resistivity control of p-type doping is less stable, n-type doped SnO2 films are more common, for example: antimony-doped tin oxide (SnO2: Sb, ATO for short) and fluorine-doped tin oxide (SnO2: F, FTO for short).

In the antimony doped tin oxide, 5 valence electrons are arranged outside a Sb atom nucleus to replace +4 valence Sn atoms in a crystal lattice, each Sb atom can provide 1 free electron, and the SnO2 thin film becomes an electron conductive n-type semiconductor after doping Sb.

In fluorine-doped tin oxide, the F atom has 7 valence electrons outside the core, and F-doped SnO2 is different from common cation substitution, wherein the F-is substituted by anion F-for O2-, or the F atom is in the interstitial position of lattice atoms and becomes interstitial doping. F has an atomic radius of 0.71nm, O has an atomic radius of 0.74nm, the atomic radii of the two are similar, the valence electron layer structure is also similar, and the O-Sn bond energy is smaller than the F-Sn bond energy, so that the F can replace O in the SnO2 crystal lattice easily. SnO2 belongs to an ionic crystal, F has one more valence electron than O, and F has one less valence electron than O to reach an outer-layer electron saturated structure. Therefore, the valence electrons provided by Sn have one surplus electron, and Sn becomes a center Sn + that is positively charged, and the Sn + positive center releases the surplus electron to become a conductive electron and can move freely.

In this embodiment, the doping element of the doped tin oxide contains a non-metal element.

In one example, the doping element includes phosphorus, and the atomic percentage of the phosphorus is 5% to 9%, preferably 5% to 8.7%, and more preferably 6% to 8.7%.

At suitable doping concentrations, the SnO2: P film is a polycrystalline degenerate semiconductor, with P generally acting as a pentavalent donor atom in the SnO2 lattice. The conductivity increases with increasing P concentration, and after a certain value of P concentration, the conductivity decreases with increasing P concentration. When P is doped at the beginning, the P is taken as a donor atom to increase the carrier concentration, so that the conductivity of SnO2: P is increased; when a certain value is reached, the concentration of P is further increased, so that the concentration of ionized impurities and the density of lattice defects are increased, the mobility of carriers is decreased, and the conductivity is decreased.

Further, the doping element further includes carbon, and the atomic percentage of the carbon is 4% to 15%, preferably 4% to 14.7%, and further preferably 4.5% to 14.7%.

Further, the doping element further includes calcium, and the atomic percentage of the calcium is 1% to 2%, preferably 1.2% to 1.8%, further preferably 1.2% to 1.6%, and further preferably 1.4%.

In the present embodiment, the thickness of the infrared electrothermal film 12 is 100nm to 30 μm, preferably 300nm to 3 μm, more preferably 500nm to 2 μm, and still more preferably 800nm to 1 μm.

In the present embodiment, the square resistance (Ω/opening) of the infrared electrothermal film 12 is 0.3 to 35, preferably 1 to 30, more preferably 1 to 18, more preferably 1 to 14, more preferably 1 to 10, more preferably 1.5 to 10, more preferably 2 to 10, more preferably 3 to 10, more preferably 3.5 to 10.

The following describes the present embodiment in detail with reference to the specific preparation process of the infrared electrothermal film 12:

example 1:

doping P element and C element in tin oxide, and preparing the infrared electrothermal film 12 on the substrate 11 (quartz tube) by adopting a magnetron sputtering method. Wherein, the inner diameter of the quartz tube is 7.2mm, the outer diameter is 9.2mm, and the height is 29 mm.

Specifically, the magnetron sputtering coating equipment is magnetron sputtering coating equipment with an anode ion source, the anode voltage of the anode ion source is 1500V, and the anode current is 0.3A; the magnetron sputtering power supply adopts a 3kW bipolar pulse direct current power supply.

On one hand, the anode ion source can generate high-energy plasma to carry out etching plasma cleaning on the surface of the workpiece, so that the cleanness of the molecular magnitude of the surface of the workpiece is ensured, and a foundation is laid for excellent film-substrate binding performance; on the other hand, the anode ion source may decompose a gas such as methane, acetylene, NH3, PH3, etc., to deposit an element such as carbon, nitrogen, phosphorus, etc., on the surface of the workpiece, or may deposit simultaneously with other targets to dope the film-forming component.

The bipolar pulse dc power supply can be used for sputtering metal targets or semiconductor materials, such as silicon targets, tin oxide targets, ATO targets, indium tin oxide targets, etc., wherein the bipolar pulse dc output can be pulsed to switch positive and negative voltages to the anode output, and the pulse form can be positive pulse, negative (switching) pulse, proportional pulse, interval pulse, counting pulse, timing pulse, program pulse, etc. The bipolar pulse direct current power supply can prevent the surface of the target from being ignited due to the accumulation of charges on the surface of the target, and the film forming quality of the surface is influenced. The bipolar pulse direct current power supply can be used for directly sputtering the metal oxide target with general conductivity, and the radio frequency power supply has radiation hazard to human bodies compared with the radio frequency power supply (the radio frequency power supply is used for sputtering, and the frequency is 13.56 MHz).

The magnetron sputtering coating equipment is also provided with a workpiece holder revolution and rotation system, a plurality of samples can be prepared at one time, and the uniformity of coating on the cylindrical surface of the quartz tube can be ensured by the revolution and rotation of the workpiece holder, so that the resistance is uniformly distributed and the heating is uniform. The preparation process is as follows:

first, the quartz tube was mounted on the substrate holder, the chamber door of the vacuum chamber was closed, and the chamber was evacuated to 5X10^-3Pa below; argon (Ar) gas was introduced at a flow rate of 100sccm to maintain a vacuum chamber pressure of 3X10^-1Pa is about;

then, starting the anode ion source, setting the voltage to be 1500V and the current to be about 0.3A, outputting in a constant voltage mode to ionize Ar gas and generate Ar⁺The plasma is bombarded on the surface of the workpiece, and the surface of the workpiece is cleaned, wherein the bombardment time is 15 minutes;

then, the Ar gas flow rate was set to 40sccm, the PH3 gas mass flow meter was turned on, the flow rate was set to 15sccm, the acetylene gas mass flow meter was turned on, the flow rate was set to 5sccm, and the bipolar pulse dc power supplies of the anode ion source and the tin oxide target were turned on simultaneously, the anode ion source voltage was set to 1500V, the current was 0.3A, the bipolar pulse dc power supply voltage was set to 600V, the current was set to 5A, the negative pulse voltage was set to 200V, the current was set to 2.5A, and the duty ratio was set to 20%. Meanwhile, the anode ion source and the bipolar pulse direct-current power supply are started, so that the ionization rate of the doping gas PH3 and acetylene can be improved, the atomic ratio of doping atoms in the film is improved, and the conductivity of the doped tin oxide film is improved;

finally, the deposition time is 30 minutes, the thickness of the obtained infrared electric heating film 12 is about 1 μm, the square resistance (omega/mouth) is about 7, and the integral resistance of the infrared electric heating film 12 is about 2 omega after the conductive coating (electrode) is formed on the infrared electric heating film 12.

Fig. 2 is a SEM schematic view of the infrared electrothermal film 12 prepared in example 1, and it can be seen from the drawing that the infrared electrothermal film 12 has a uniform film thickness with an average thickness of 1 μm.

Fig. 3 is an XPS schematic diagram of the infrared electrothermal film 12 prepared in example 1, and the atomic number percentages of the specific components are shown in the following table.

Element(s)	Atomic number percent (%)
		Sn	51.1
O	38.4
		P	6.0
C	4.5

The tin oxide is doped with P element and C element, which is helpful for improving the conductivity and infrared radiation efficiency of the tin oxide film.

In particular, with reference to figures 4 to 5, a in figures 4 to 5 is the temperature profile of the infrared electrothermal film 12 prepared in example 1 when the aerosol-forming substrate is heated by infrared radiation and B is the temperature profile of a smoking article of the prior art when the aerosol-forming substrate is heated by non-infrared radiation; wherein the temperature of the aerosol-forming substrate is measured by inserting a thermocouple into the central portion of the tobacco rod. As can be seen from the figure, when the infrared electrothermal film 12 prepared in example 1 heats the aerosol-forming substrate by infrared radiation, the temperature of the central position of the cigarette is obviously higher than that of the curve B, i.e. the infrared electrothermal film has a certain penetration depth, so that the heating is more uniform; in addition, the preheating time is shorter than that of the curve B, and the waiting time of the user is shortened.

Example 2:

doping P element, C element and Ca element in tin oxide, and preparing the infrared electrothermal film 12 on the substrate 11 (quartz tube) by adopting a chemical vapor deposition method. Wherein, the inner diameter of the quartz tube is 7.2mm, the outer diameter is 9.2mm, and the height is 29 mm.

The preparation process is as follows:

the method comprises the steps of preparing a mixed solution with the concentration of SnCl4 of 1mol/L, the concentration of H3PO4 of 0.2mol/L and the concentration of isopropanol of 0.15mol/L, CaCl2 of 0.03mol/L by using SnCl4 & 5H2O, concentrated H3PO4, isopropanol and a small amount of CaCl2 solution as raw materials and water as a solution; the mixed solution is heated to 400-700 ℃, typically to 600 ℃; the mixed solution forms vaporized smoke at high temperature;

the temperature of the substrate 11 is heated to 300-;

ar and O2 are used as carrier gases, and the flow rates of introducing Ar and O2 are both 50 sccm; the carrier gas carries the vaporized smoke formed by the mixed solution to flow towards the workpiece with relatively low temperature; the vaporized smoke formed by the mixed solution reacts with oxygen in the carrier gas to generate the infrared electrothermal film 12 on the surface of the quartz tube workpiece. The thickness of the obtained infrared electrothermal film 12 is about 1 μm, the square resistance (Ω/opening) is about 3.5, and the overall resistance of the infrared electrothermal film 12 is about 1 Ω after the conductive coating (e.g., silver electrode) is formed on the infrared electrothermal film 12.

Fig. 6 is an XPS schematic diagram of the infrared electrothermal film 12 prepared in this embodiment, and the atomic number percentages of the specific components are shown in the following table.

Element(s)	Atomic number percent (%)
		Sn	42.6
O	32.6
		C	14.7
P	8.7
		Ca	1.4

The doping of P element, C element and Ca element in tin oxide is also helpful to improve the conductivity and infrared radiation efficiency of tin oxide film.

It should be noted that in the above embodiments or descriptions, the components in the infrared electrothermal film 12 are not limited to doped tin oxide, and may also include other materials, such as: tin tetrachloride, tin oxide, antimony trichloride, titanium tetrachloride, far infrared electrothermal ink, ceramic powder, and the like.

It should be further noted that the infrared electrothermal film 12 is formed on the surface of the substrate 11 by a physical vapor deposition method or a chemical vapor deposition method, and has good uniformity, controllability and repeatability of film thickness, relatively low deposition rate, good stability among batches, and suitability for large-scale automatic production.

And the conductive parts (13, 14) comprise a first electrode 13 and a second electrode 14 which are arranged on the base body 11, and the first electrode 13 and the second electrode 14 are both electrically connected with the infrared electrothermal film 12 so as to feed the electric power of a power supply to the infrared electrothermal film 12. Specifically, after receiving electric power from the power source, electric current may flow from the first electrode 13 to the second electrode 14 through the infrared electrothermal film 12.

In this example, the first electrode 13 and the second electrode 14 are conductive coatings coated on the end portions of the base 11 by means of dipping, and the material of the conductive coatings is selected from at least one of silver, gold, palladium, platinum, copper, nickel, molybdenum, tungsten, and niobium. In other examples, the first electrode 13 and the second electrode 14 may also be conductive members sleeved on the base 1 near the first end and the second end, and the conductive members include, but are not limited to, metal conductive sheets, such as copper sheets, steel sheets, and the like.

In this example, the first electrode 13 and the second electrode 14 are in the shape of a ring. Further, the first electrode 13 and/or the second electrode 14 may further include a strip-like conductive coating portion extending from the ring-shaped conductive coating portion in the axial direction of the base 11.

The number of conductive parts (13, 14) is not limited to the case of fig. 1, and for example: an electrode can be arranged between the first electrode 13 and the second electrode 14 to divide the infrared electrothermal film 12 into a first part infrared electrothermal film 12 and a second part infrared electrothermal film 12 along the longitudinal direction of the substrate 11, and the electric power fed to the first part infrared electrothermal film 12 and/or the second part infrared electrothermal film 12 is controlled to heat different positions of the substrate 11 independently, so that the aerosol forming substrate is heated in a segmented manner. The staged heating ensures the heating rate of the aerosol-generating substrate, consistency of fragrance evaporation and mouth feel on smoking.

Second embodiment

Fig. 7 to 8 illustrate an aerosol-generating device 100 provided in a second embodiment of the present application, which includes a housing assembly 6 and a heater 1, and the structure of the heater 1 can refer to the content of the first embodiment, and repeated descriptions thereof are omitted here.

The heater 1 is disposed within the housing assembly 6. The aerosol generating device 100 of the present embodiment includes a base 11, an infrared electrothermal film 12 formed on an outer surface of the base 11, and conductive portions (13, 14) formed at both ends of the base 11. The infrared electrothermal film 12 receives electric power of a power supply through the conductive parts (13, 14) to generate heat, so that the infrared electrothermal film 12 is heated by the heat and generates infrared rays, and the infrared electrothermal film 12 carries out radiation heating on the aerosol-forming substrate in the cavity of the base body 11.

The housing assembly 6 includes a housing 61, a fixing housing 62, a fixing member 63 and a bottom cover 64, wherein the fixing housing 62 and the fixing member 63 are both fixed in the housing 61, the fixing member 63 is used for fixing the substrate 11, the fixing member 63 is disposed in the fixing housing 62, and the bottom cover 64 is disposed at one end of the housing 61 and covers the housing 61. Specifically, mounting 63 includes fixing base 631 and lower fixing base 632, go up fixing base 631 and lower fixing base 632 and all locate in fixed shell 62, the first end and the second end of base 11 are fixed respectively on last fixing base 631 and lower fixing base 632, the bottom 64 epirelief is equipped with intake pipe 641, the one end that lower fixing base 632 deviates from last fixing base 631 is connected with intake pipe 641, go up fixing base 631, base 1, lower fixing base 632 and the coaxial setting of intake pipe 641, and base 11 and last fixing base 631, seal down between the fixing base 632, lower fixing base 632 also seals with intake pipe 641, intake pipe 641 and outside air intercommunication so that can smoothly admit air when the user sucks.

The aerosol-generating device 100 further comprises a control circuit board 3 and a battery 7. Fixed casing 62 includes preceding shell 621 and backshell 622, preceding shell 621 and backshell 622 fixed connection, and control circuit board 3 and battery 7 all set up in fixed casing 62, and battery 7 is connected with control circuit board 3 electricity, and button 4 is protruding to be established on shell 61, through pressing button 4, can realize the circular telegram or the outage to base member 11 infrared electrothermal film 12 on the surface. The control circuit board 3 is further connected with a charging interface 31, the charging interface 31 is exposed on the bottom cover 64, and a user can charge or upgrade the aerosol generating device 100 through the charging interface 31 to ensure the continuous use of the aerosol generating device 100.

The aerosol-generating device 100 further comprises an insulating tube 5, the insulating tube 5 being disposed within the stationary housing 62, the insulating tube 5 fitting over the periphery of the base 11 for at least partially preventing heat from being conducted by the heater 1 to the housing assembly 6, resulting in a burning sensation by the user. The insulating tube may include an insulating material, which may be an insulating gel, aerogel blanket, asbestos, aluminum silicate, calcium silicate, diatomaceous earth, zirconia, or the like. The heat insulating pipe 5 may be a vacuum heat insulating pipe. The inner surface of the heat insulation pipe 5 can be coated with an infrared reflection coating so as to reflect infrared rays radiated by the infrared electrothermal film 12 to the base body 11, thereby improving the heating efficiency.

The aerosol-generating device 100 further comprises a temperature sensor 2, for example an NTC temperature sensor. The temperature sensor 2 is used for detecting the real-time temperature of the base body 11 and transmitting the detected real-time temperature to the control circuit board 3, and the control circuit board 3 adjusts the magnitude of current flowing through the infrared electrothermal film 12 according to the real-time temperature.

Specifically, when the temperature sensor 2 detects that the real-time temperature in the base 11 is low, for example, when the temperature inside the base 11 is detected to be lower than 150 ℃, the control circuit board 3 controls the battery 7 to output higher voltage to the conductive parts (13, 14), so that the current fed into the infrared electrothermal film 12 is increased, the heating power of the aerosol-forming substrate is increased, and the waiting time for a user to suck a first mouth is reduced.

When the temperature sensor 2 detects that the temperature of the base body 11 is 150-200 ℃, the control circuit board 3 controls the battery 7 to output normal voltage to the conductive parts (13, 14).

When the temperature sensor 2 detects that the temperature of the base body 11 is 200-250 ℃, the control circuit board 3 controls the battery 7 to output lower voltage to the conductive parts (13, 14).

When the temperature sensor 2 detects that the temperature inside the base body 11 is 250 ℃ or higher, the control circuit board 3 controls the battery 7 to stop outputting the voltage to the conductive parts (13, 14).

It should be noted that the description of the present application and the accompanying drawings set forth preferred embodiments of the present application, however, the present application may be embodied in many different forms and is not limited to the embodiments described in the present application, which are not intended as additional limitations to the present application, but are provided for the purpose of providing a more thorough understanding of the present disclosure. Moreover, the above-mentioned technical features are combined with each other to form various embodiments which are not listed above, and all the embodiments are regarded as the scope described in the present specification; further, modifications and variations may occur to those skilled in the art in light of the foregoing description, and it is intended to cover all such modifications and variations as fall within the scope of the appended claims.