阅读说明：本技术 一种硅片单组份清洗剂及其制备方法 (Silicon wafer single-component cleaning agent and preparation method thereof ) 是由 徐志群 高大 孙彬 付明全 于 2021-09-16 设计创作，主要内容包括：本发明公开一种硅片单组份清洗剂及其制备方法,包括以下重量份原料：无机碱2-10份、螯合剂1-10份、缓冲剂1-5份、分散剂1-5份、复合非离子表面活性剂10-20份,悬浮剂2-6、助溶剂2-5份、磺酸2-5份、消泡剂1-3份、缓蚀剂1-3份、去离子水5-10份和纯水20-30份；本发明采用单组分的配方,使用的添加比较方便,清洗效果良好,对于光伏硅片脏污有较强的去除能力,同时此清洗剂泡沫较小,能满足硅片清洗要求,同时此清洗剂浊点在60度以上,可以在较高温度下使用,降低了硅片清洗过程中的成本和减少清洗浮片异常引起的硅片表面硅粉污、崩边和破片,相比现有的清洗剂成本较低且硅片表面清洗脏污效果更好。(The invention discloses a silicon wafer single-component cleaning agent and a preparation method thereof, wherein the silicon wafer single-component cleaning agent comprises the following raw materials in parts by weight: 2-10 parts of inorganic base, 1-10 parts of chelating agent, 1-5 parts of buffering agent, 1-5 parts of dispersing agent, 10-20 parts of composite nonionic surfactant, 2-6 parts of suspending agent, 2-5 parts of cosolvent, 2-5 parts of sulfonic acid, 1-3 parts of defoaming agent, 1-3 parts of corrosion inhibitor, 5-10 parts of deionized water and 20-30 parts of pure water; the cleaning agent adopts a single-component formula, is convenient to add, has a good cleaning effect, has strong removal capacity on the pollution of the photovoltaic silicon wafer, has small foam, can meet the cleaning requirement of the silicon wafer, has a cloud point of more than 60 ℃, can be used at a high temperature, reduces the cost in the process of cleaning the silicon wafer, reduces the silicon powder pollution, edge breakage and fragment on the surface of the silicon wafer caused by abnormal cleaning of a floating piece, and has lower cost and better cleaning effect on the surface of the silicon wafer compared with the existing cleaning agent.)

1. The silicon wafer single-component cleaning agent comprises the following raw materials in parts by weight: 2-10 parts of inorganic base, 1-10 parts of chelating agent, 1-5 parts of buffering agent, 1-5 parts of dispersing agent, 10-20 parts of composite nonionic surfactant, 2-6 parts of suspending agent, 2-5 parts of cosolvent, 2-5 parts of sulfonic acid, 1-3 parts of defoaming agent, 1-3 parts of corrosion inhibitor, 5-10 parts of deionized water and 20-30 parts of pure water.

2. The silicon wafer single-component cleaning agent as claimed in claim 1, wherein the cleaning agent comprises: the feed comprises the following raw materials in parts by weight: 5 parts of inorganic base, 5 parts of chelating agent, 3 parts of buffering agent, 2 parts of dispersing agent, 15 parts of composite nonionic surfactant, 4 parts of suspending agent, 3 parts of cosolvent, 3 parts of sulfonic acid, 2 parts of defoaming agent, 2 parts of corrosion inhibitor, 8 parts of deionized water and 25 parts of pure water.

3. The silicon wafer single-component cleaning agent as claimed in claim 1, wherein the cleaning agent comprises: the composite nonionic surfactant is prepared by mixing two or three of nonylphenol polyoxyethylene ether, alkylphenol polyoxyethylene ether and alkylphenol polyoxyethylene ether.

4. The silicon wafer single-component cleaning agent as claimed in claim 1, wherein the cleaning agent comprises: the inorganic alkali is selected from one or two of sodium hydroxide and potassium hydroxide, and the chelating agent is selected from one or two or three of disodium ethylene diamine tetraacetate, tetrasodium ethylene diamine tetraacetate and sodium citrate.

5. The silicon wafer single-component cleaning agent as claimed in claim 1, wherein the cleaning agent comprises: the buffer is selected from one or two of sodium bicarbonate and potassium bicarbonate, and the dispersant is selected from one or two of sodium dodecyl benzene sulfonate and sodium dodecyl sulfate.

6. The silicon wafer single-component cleaning agent as claimed in claim 1, wherein the cleaning agent comprises: the cosolvent is selected from one of sodium benzoate, citric acid and calcium lactate, the defoaming agent is selected from one of non-silicon defoaming agent, polyether defoaming agent and organic silicon defoaming agent, and the corrosion inhibitor is selected from one of organic corrosion inhibitor and polymer corrosion inhibitor.

7. A preparation method of a silicon wafer single-component cleaning agent is characterized by comprising the following steps: the method comprises the following steps:

the method comprises the following steps: premixing raw materials

Firstly, adding inorganic base, chelating agent, buffering agent, dispersing agent, composite nonionic surfactant and pure water in specified weight parts into a mixing container, mixing and stirring to prepare a semi-finished product of the cleaning agent;

step two: modification reaction

According to the first step, adding a suspending agent, a cosolvent, sulfonic acid, a defoaming agent, a slow-release agent and deionized water into the semi-finished product of the cleaning agent in sequence, continuously mixing and stirring, uniformly stirring, and standing for 30-60 minutes to prepare a modified cleaning agent;

step three: filling finished products

And according to the second step, the prepared modified cleaning agent is sealed and filled into a packaging container prepared in advance to prepare a cleaning agent finished product, and then the surface of the packaging container is sprayed with a label code and conveyed to a cool and ventilated warehouse for temporary storage.

Technical Field

The invention relates to the technical field of silicon wafer cleaning agents, in particular to a silicon wafer single-component cleaning agent and a preparation method thereof.

Background

Silicon is a very common element, but the silicon rarely appears in the nature in the form of a simple substance, but widely exists in rocks, gravels and dust in the form of complex silicate or silicon dioxide, the content of the silicon element in the crust reaches 25.8%, and an inexhaustible source is provided for the production of monocrystalline silicon;

at present, a cleaning agent used in the market is generally an aqueous alkali of potassium hydroxide, the cleaning agent is easy to generate a large amount of foam and has poor cleaning effect, and a silicon wafer can float to cause the silicon wafer to leak out of a water surface by 2-20mm, so that silicon powder on the edge of the silicon wafer surface is polluted, edge breakage, fragment breakage and the like are abnormal.

Disclosure of Invention

Aiming at the problems, the invention aims to provide a silicon wafer single-component cleaning agent and a preparation method thereof, the cleaning agent adopts a single-component formula, is convenient to use and add, has a good cleaning effect, has strong removal capability on the contamination of a photovoltaic silicon wafer, has small foam, can meet the cleaning requirement of the silicon wafer, has a cloud point of more than 60 ℃, can be used at a high temperature, reduces the cost in the process of cleaning the silicon wafer, and reduces the silicon powder contamination, edge breakage and fragment on the surface of the silicon wafer caused by the abnormal cleaning of a floating piece.

In order to achieve the purpose of the invention, the invention is realized by the following technical scheme: the silicon wafer single-component cleaning agent comprises the following raw materials in parts by weight: 2-10 parts of inorganic base, 1-10 parts of chelating agent, 1-5 parts of buffering agent, 1-5 parts of dispersing agent, 10-20 parts of composite nonionic surfactant, 2-6 parts of suspending agent, 2-5 parts of cosolvent, 2-5 parts of sulfonic acid, 1-3 parts of defoaming agent, 1-3 parts of corrosion inhibitor, 5-10 parts of deionized water and 20-30 parts of pure water.

The further improvement lies in that: the feed comprises the following raw materials in parts by weight: 5 parts of inorganic base, 5 parts of chelating agent, 3 parts of buffering agent, 2 parts of dispersing agent, 15 parts of composite nonionic surfactant, 4 parts of suspending agent, 3 parts of cosolvent, 3 parts of sulfonic acid, 2 parts of defoaming agent, 2 parts of corrosion inhibitor, 8 parts of deionized water and 25 parts of pure water.

The further improvement lies in that: the composite nonionic surfactant is prepared by mixing two or three of nonylphenol polyoxyethylene ether, alkylphenol polyoxyethylene ether and alkylphenol polyoxyethylene ether.

The further improvement lies in that: the inorganic alkali is selected from one or two of sodium hydroxide and potassium hydroxide, and the chelating agent is selected from one or two or three of disodium ethylene diamine tetraacetate, tetrasodium ethylene diamine tetraacetate and sodium citrate.

The further improvement lies in that: the buffer is selected from one or two of sodium bicarbonate and potassium bicarbonate, and the dispersant is selected from one or two of sodium dodecyl benzene sulfonate and sodium dodecyl sulfate.

The further improvement lies in that: the cosolvent is selected from one of sodium benzoate, citric acid and calcium lactate, the defoaming agent is selected from one of non-silicon defoaming agent, polyether defoaming agent and organic silicon defoaming agent, and the corrosion inhibitor is selected from one of organic corrosion inhibitor and polymer corrosion inhibitor.

A preparation method of a silicon wafer single-component cleaning agent comprises the following steps:

the method comprises the following steps: premixing raw materials

Firstly, adding inorganic base, chelating agent, buffering agent, dispersing agent, composite nonionic surfactant and pure water in specified weight parts into a mixing container, mixing and stirring to prepare a semi-finished product of the cleaning agent;

step two: modification reaction

According to the first step, adding a suspending agent, a cosolvent, sulfonic acid, a defoaming agent, a slow-release agent and deionized water into the semi-finished product of the cleaning agent in sequence, continuously mixing and stirring, uniformly stirring, and standing for 30-60 minutes to prepare a modified cleaning agent;

step three: filling finished products

And according to the second step, the prepared modified cleaning agent is sealed and filled into a packaging container prepared in advance to prepare a cleaning agent finished product, and then the surface of the packaging container is sprayed with a label code and conveyed to a cool and ventilated warehouse for temporary storage.

The invention has the beneficial effects that: the cleaning agent adopts a single-component formula, is convenient to add, has a good cleaning effect, has strong removal capacity on the pollution of the photovoltaic silicon wafer, has small foam, can meet the cleaning requirement of the silicon wafer, has a cloud point of more than 60 ℃, can be used at a high temperature, reduces the cost in the cleaning process of the silicon wafer and reduces silicon powder pollution, edge breakage and breakage on the surface of the silicon wafer caused by abnormal cleaning of a floating wafer, has lower cost and better cleaning effect on the surface of the silicon wafer compared with the existing cleaning agent, and is worthy of wide popularization.

Drawings

In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to these drawings without creative efforts.

FIG. 1 is a flow chart of the preparation process of the present invention.

Detailed Description

The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.

In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc., indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplicity of description, but do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first," "second," "third," "fourth," and the like are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.

In the description of the present invention, it should be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.

Example one

The embodiment provides a silicon wafer single-component cleaning agent which comprises the following raw materials in parts by weight: the composite nonionic surfactant is prepared by mixing nonyl phenol polyoxyethylene ether and alkylphenol polyoxyethylene ether, wherein the inorganic base is sodium hydroxide, the chelating agent is disodium ethylenediamine tetraacetate, the buffering agent is sodium bicarbonate, the dispersing agent is sodium dodecyl benzene sulfonate, the cosolvent is sodium benzoate, the defoaming agent is non-silicon defoaming agent, and the corrosion inhibitor is organic corrosion inhibitor.

Referring to fig. 1, this embodiment further provides a preparation method of the silicon wafer single-component cleaning agent, including the following steps:

the method comprises the following steps: premixing raw materials

Firstly, adding inorganic base, chelating agent, buffering agent, dispersing agent, composite nonionic surfactant and pure water in specified weight parts into a mixing container, mixing and stirring to prepare a semi-finished product of the cleaning agent;

step two: modification reaction

According to the first step, firstly, a suspending agent, a cosolvent, sulfonic acid, a defoaming agent, a slow-release agent and deionized water are sequentially added into a semi-finished product of the cleaning agent to be continuously mixed and stirred, the mixture is uniformly stirred and then is kept stand for 30-60 minutes to prepare a modified cleaning agent, fine particles on the surface of a silicon wafer are stably suspended in water by adding the suspending agent to avoid secondary pollution caused by re-adsorption, the raw materials are better mutually dissolved by adding the cosolvent to improve the preparation efficiency, the oxide on the surface of the silicon wafer is reduced by adding the sulfonic acid, and the foam yield of the cleaning agent is reduced by adding the defoaming agent;

step three: filling finished products

And according to the second step, the prepared modified cleaning agent is sealed and filled into a packaging container prepared in advance to prepare a cleaning agent finished product, and then the surface of the packaging container is sprayed with a label code and conveyed to a cool and ventilated warehouse for temporary storage.

Example two

The embodiment provides a silicon wafer single-component cleaning agent which comprises the following raw materials in parts by weight: the composite nonionic surfactant is prepared by mixing alkylphenol polyoxyethylene ether and alkylphenol polyoxyethylene ether, the inorganic base is potassium hydroxide, the chelating agent is tetrasodium ethylenediamine tetraacetate, the buffering agent is potassium bicarbonate, the dispersing agent is sodium dodecyl sulfate, the cosolvent is citric acid, the defoaming agent is a polyether defoaming agent, and the corrosion inhibitor is an organic corrosion inhibitor.

Referring to fig. 1, this embodiment further provides a preparation method of the silicon wafer single-component cleaning agent, including the following steps:

the method comprises the following steps: premixing raw materials

Firstly, adding inorganic base, chelating agent, buffering agent, dispersing agent, composite nonionic surfactant and pure water in specified weight parts into a mixing container, mixing and stirring to prepare a semi-finished product of the cleaning agent;

step two: modification reaction

According to the first step, firstly, a suspending agent, a cosolvent, sulfonic acid, a defoaming agent, a slow-release agent and deionized water are sequentially added into a semi-finished product of the cleaning agent to be continuously mixed and stirred, the mixture is uniformly stirred and then is kept stand for 30-60 minutes to prepare a modified cleaning agent, fine particles on the surface of a silicon wafer are stably suspended in water by adding the suspending agent to avoid secondary pollution caused by re-adsorption, the raw materials are better mutually dissolved by adding the cosolvent to improve the preparation efficiency, the oxide on the surface of the silicon wafer is reduced by adding the sulfonic acid, and the foam yield of the cleaning agent is reduced by adding the defoaming agent;

step three: filling finished products

And according to the second step, the prepared modified cleaning agent is sealed and filled into a packaging container prepared in advance to prepare a cleaning agent finished product, and then the surface of the packaging container is sprayed with a label code and conveyed to a cool and ventilated warehouse for temporary storage.

EXAMPLE III

The embodiment provides a silicon wafer single-component cleaning agent which comprises the following raw materials in parts by weight: 10 parts of inorganic base, 10 parts of chelating agent, 5 parts of buffering agent, 5 parts of dispersing agent, 20 parts of composite nonionic surfactant, 6 parts of suspending agent and 5 parts of cosolvent, 5 parts of sulfonic acid, 3 parts of defoaming agent, 3 parts of corrosion inhibitor, 10 parts of deionized water and 30 parts of pure water, wherein the composite nonionic surfactant is prepared by mixing nonyl phenol polyoxyethylene ether, alkylphenol polyoxyethylene ether and alkylphenol polyoxyethylene ether, the inorganic base is prepared by mixing sodium hydroxide and potassium hydroxide, the chelating agent is prepared by mixing disodium ethylenediamine tetraacetate, tetrasodium ethylenediamine tetraacetate and sodium citrate, the buffering agent is prepared by mixing sodium bicarbonate and potassium bicarbonate, the dispersing agent is prepared by mixing sodium dodecyl benzene sulfonate and sodium dodecyl sulfate, the cosolvent is calcium lactate, the defoaming agent is an organic silicon type defoaming agent, and the corrosion inhibitor is a polymer corrosion inhibitor.

Referring to fig. 1, this embodiment further provides a preparation method of the silicon wafer single-component cleaning agent, including the following steps:

the method comprises the following steps: premixing raw materials

Firstly, adding inorganic base, chelating agent, buffering agent, dispersing agent, composite nonionic surfactant and pure water in specified weight parts into a mixing container, mixing and stirring to prepare a semi-finished product of the cleaning agent;

step two: modification reaction

According to the first step, firstly, a suspending agent, a cosolvent, sulfonic acid, a defoaming agent, a slow-release agent and deionized water are sequentially added into a semi-finished product of the cleaning agent to be continuously mixed and stirred, the mixture is uniformly stirred and then is kept stand for 30-60 minutes to prepare a modified cleaning agent, fine particles on the surface of a silicon wafer are stably suspended in water by adding the suspending agent to avoid secondary pollution caused by re-adsorption, the raw materials are better mutually dissolved by adding the cosolvent to improve the preparation efficiency, the oxide on the surface of the silicon wafer is reduced by adding the sulfonic acid, and the foam yield of the cleaning agent is reduced by adding the defoaming agent;

step three: filling finished products

And according to the second step, the prepared modified cleaning agent is sealed and filled into a packaging container prepared in advance to prepare a cleaning agent finished product, and then the surface of the packaging container is sprayed with a label code and conveyed to a cool and ventilated warehouse for temporary storage.

The weight parts of the raw materials used in examples 1-3 are shown in table 1:

TABLE 1

The silicon wafer single-component cleaning agent prepared in the embodiment 1, the embodiment 2 and the embodiment 3 and the existing cleaning agent are subjected to cleaning effect test, and the test results are shown in the following table 2:

TABLE 2

The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents, improvements and the like that fall within the spirit and principle of the present invention are intended to be included therein.