阅读说明：本技术 一种晶圆电镀预处理设备、系统及方法 (Wafer electroplating pretreatment equipment, system and method ) 是由 史蒂文·贺·汪 林鹏鹏 于 2021-10-21 设计创作，主要内容包括：本发明提供了一种晶圆电镀预处理设备、系统及方法,其中,晶圆电镀预处理设备包括工艺槽体和角度倾斜系统；工艺槽体的内部具有用于盛放处理液的工艺腔,工艺腔内设有卡持晶圆的夹持部；角度倾斜系统与工艺槽体连接,角度倾斜系统能够驱动工艺槽体整体旋转。本发明提供的晶圆电镀预处理设备、系统及方法,操作简单,通过角度倾斜系统的设计,使得在预处理过程中,晶圆随工艺槽体一同倾斜及摆动,有利于孔洞中的空气被处理液置换并溢出,实现极好的预处理效果,同时,由于角度倾斜系统位于工艺槽体外部,这一方面大大提高了工艺槽体的密封性,另一方面,无须对驱动源即角度倾斜系统进行防水及耐腐蚀处理,大大提高了经济效益。(The invention provides a wafer electroplating pretreatment device, a system and a method, wherein the wafer electroplating pretreatment device comprises a process tank body and an angle inclination system; a process cavity for containing treatment liquid is arranged in the process tank body, and a clamping part for clamping the wafer is arranged in the process cavity; the angle inclination system is connected with the process tank body and can drive the process tank body to rotate integrally. The pretreatment equipment, the pretreatment system and the pretreatment method for electroplating the wafer are simple to operate, the wafer is enabled to incline and swing together with the process tank body in the pretreatment process through the design of the angle inclination system, the air in the hole is favorably replaced and overflowed by the treatment liquid, and the excellent pretreatment effect is realized.)

1. A wafer electroplating pretreatment device is characterized by comprising a process tank body and an angle inclination system;

a process cavity for containing treatment liquid is arranged in the process tank body, and a clamping part for clamping the wafer is arranged in the process cavity; the angle inclination system is connected with the process tank body and can drive the process tank body to rotate integrally.

2. The wafer plating pretreatment apparatus of claim 1, wherein the angular tilting system comprises a first driving device, a first synchronous pulley, a second synchronous pulley, and a rotation spindle;

an output shaft of the first driving device is connected with a first synchronous belt pulley, the first synchronous belt pulley is linked with a second synchronous belt pulley through a synchronous belt, the second synchronous belt pulley is connected with a rotating main shaft, and the rotating main shaft is connected with a process tank body.

3. The wafer plating pretreatment apparatus of claim 1, further comprising a rotary seal system, the rotary seal system comprising a second drive;

the technical groove comprises a groove body frame with an opening and a cover plate matched with the groove body frame, the cover plate is rotatably connected with the groove body frame through a hinge mechanism, and an output shaft of a second driving device is connected with the cover plate and can drive the cover plate to overturn.

4. The wafer electroplating pretreatment equipment of claim 1, wherein the second driving device comprises two air cylinders, the two air cylinders are respectively arranged at two sides of the cover plate, and piston rods of the two air cylinders are respectively connected to two ends of the cover plate.

5. The wafer electroplating pretreatment apparatus of claim 1, wherein the clamping portion comprises a plurality of supporting columns, and clamping grooves for clamping the outer circumferential surface of the wafer are arranged on the supporting columns.

6. The wafer electroplating pretreatment equipment according to claim 1, wherein an air suction port and a pressure relief port are formed in the side wall of the process tank body, the air suction port is used for being connected with an air suction device, and the position of the air suction port is higher than the height of the treatment liquid in the process chamber.

7. The wafer electroplating pretreatment equipment as claimed in claim 1, wherein a liquid inlet and a liquid outlet are formed in the bottom of the process tank body, the liquid inlet is used for inputting the treatment liquid, and the liquid outlet is used for discharging the treatment liquid.

8. A wafer plating pretreatment system comprising the wafer plating pretreatment apparatus according to any one of claims 1 to 7.

9. The wafer plating pretreatment system of claim 8, further comprising a vacuum system, wherein the vacuum system comprises a vacuum pump and a vacuum pipe, and the vacuum pump is connected with the pumping port through the vacuum pipe.

10. The wafer electroplating pretreatment system of claim 8, further comprising a liquid inlet and outlet system, wherein the liquid inlet and outlet system comprises a liquid inlet pipe, a liquid outlet pipe and a liquid storage tank, the liquid storage tank is connected with the liquid inlet through the liquid inlet pipe, and the liquid outlet pipe is connected with a liquid outlet.

11. The wafer plating pretreatment system of claim 8, further comprising a control system that controls parameters of the wafer plating pretreatment system.

12. A wafer plating pretreatment method, characterized in that the wafer plating pretreatment apparatus according to any one of claims 1 to 7 is used, comprising the steps of:

s10, placing the wafer into the process chamber, fixing the wafer by the clamping part, and sealing the process tank body;

s20, controlling an angle inclination system to drive the process tank body to rotate to a preset angle and then swinging;

s30, injecting the processing liquid into the process cavity to soak the wafer in the processing liquid;

s40, controlling the angle tilting system to stop swinging and reset;

and S50, recovering the normal state in the process chamber, taking out the wafer, and finishing the pretreatment process.

13. The wafer plating pretreatment method as recited in claim 12, further comprising, between the step S10 and the step S20, the step S11: and pumping the gas in the process chamber by using an air pumping device to stabilize the air pressure in the process chamber at a preset value.

14. A method as claimed in claim 13, wherein in step S11, the preset value of air pressure is not more than 0.08 Mpa.

15. The wafer electroplating pretreatment method as claimed in claim 12, wherein in step S10, the second driving device is controlled to close the cover plate of the process tank body to seal the process tank body.

16. The wafer electroplating pretreatment method as recited in claim 12, wherein in step S20, the first driving device is controlled to drive the first synchronous pulley to rotate, the first synchronous pulley drives the process tank to rotate after being transmitted by the second synchronous pulley and the rotating spindle, and the first driving device is controlled to swing the process tank according to a preset frequency and amplitude after the process tank rotates to a preset angle.

17. A wafer plating pretreatment method according to claim 16, wherein the preset angle is in a range of 3 ° to 5 °.

Technical Field

The invention relates to the field of wafer preparation, in particular to a wafer electroplating pretreatment device, a wafer electroplating pretreatment system and a wafer electroplating pretreatment method.

Background

Wafers, which are widely used in the fabrication of integrated circuits. The surface of the wafer which is not pretreated has fine holes, and gas bubbles are easily formed on a solid-liquid interface between the electroplating solution and the surface of the wafer due to the surface tension of the electroplating solution in the subsequent electroplating operation, so that the electroplated layer is defective.

In response to the above problem, a conventional countermeasure is to perform a pre-wetting treatment on the wafer. Namely, under the normal pressure environment, the wafer is arranged in a process tank body, the wafer treatment liquid is filled into the process tank body, and the wafer is immersed in the liquid level of the wafer treatment liquid. The wafer treatment liquid can enter the holes on the surface of the wafer through pre-wetting, which is beneficial to the next electroplating process.

However, practice has shown that the above treatment method does not effectively displace the air located in the holes. The effect of the above-mentioned pre-wetting mode is shown in fig. 1, wherein the oblique line portion is the wafer processing liquid 101, the vertical strip is the hole 102, and the blank area of the hole 102 is the deep hole 103 to be pre-wetted. It can be seen that the deep hole 103 is occupied by air, so that the wafer processing liquid 101 cannot reach the deep hole 103 at all, and only wets the surface position of the wafer and the shallow layer below the surface, and therefore the expected effect is not achieved.

In view of the current situation, a skilled person proposes to fully overflow the gas in the holes by rotating the wafer. If the wafer can be placed on the wafer chuck, the wafer chuck is arranged in the process tank body, the process tank body is filled with the wafer treatment liquid, the process tank body is sealed, the center of the wafer chuck is connected to the rotating motor through a transmission rod, and the transmission rod drives the wafer chuck to rotate under the driving of the rotating motor.

The above method plays a certain role in reducing the difficulty of filling the deep hole with the wafer processing solution, but still has the following defects:

first, because the rotating electrical machines can not soak in the wafer treatment fluid, consequently need install sealed housing outside the rotating electrical machines, this leads to prewetting equipment structure among the prior art complicated, the operation is inconvenient, need additionally carry out water repellent treatment to the rotating electrical machines, when the treatment fluid is for having corrosive liquids, still must carry out corrosion-resistant processing to the rotating electrical machines, this has increased the processing degree of difficulty and processing cost undoubtedly, if the rotating electrical machines shell carelessly takes place to leak, the wafer treatment fluid gets into the rotating electrical machines and will lead to the potential safety hazard again, the wafer treatment fluid also can be seriously polluted.

Secondly, in order to improve the process treatment effect, the process tank body can be vacuumized, in this case, in order to ensure the sealing performance of the process tank body, a sealing measure needs to be taken for a power supply line of the rotating motor, which undoubtedly increases the processing difficulty and cost of the pre-wetting device, and as described above, once the sealing is improper, the potential safety hazard can be caused, the wafer treatment liquid is polluted, the economic loss is caused, and the wafer processing efficiency is influenced.

Disclosure of Invention

Aiming at the defects in the prior art, the invention provides a novel wafer electroplating pretreatment device, and also provides a corresponding pretreatment method and a pretreatment system comprising the wafer electroplating pretreatment device.

In order to achieve the purpose, the invention provides the following technical scheme:

a wafer electroplating pretreatment device comprises a process tank body and an angle inclination system;

a process cavity for containing treatment liquid is arranged in the process tank body, and a clamping part for clamping the wafer is arranged in the process cavity; the angle inclination system is connected with the process tank body and can drive the process tank body to rotate integrally.

Among this technical scheme, through adopting above structural design, inside the clamping part that utilizes the process intracavity to set up was fixed in the technology cell body with the wafer, it is whole rotatory to drive the technology cell body through angle tilt system, whole equipment simple structure, and because angle tilt system is located the technology cell body outside, this leakproofness that has improved the technology cell body on the one hand greatly, on the other hand, need not carry out water repellent and corrosion-resistant processing to the driving source promptly angle tilt system, has improved economic benefits greatly. Meanwhile, through the design of the angle tilting system, the wafer is tilted and swings to one side from the horizontal position along with the process tank body in the pretreatment process, so that the air in the holes is replaced and overflowed by the treatment liquid, and a good pretreatment effect is realized.

Preferably, the angular tilting system comprises a first drive means, a first synchronous pulley, a second synchronous pulley and a rotating main shaft; an output shaft of the first driving device is connected with a first synchronous belt pulley, the first synchronous belt pulley is linked with a second synchronous belt pulley through a synchronous belt, the second synchronous belt pulley is connected with a rotating main shaft, and the rotating main shaft is connected with a process tank body.

In the technical scheme, through adopting the above structural design, when the process tank body needs to be integrally rotated, the driving motor drives the first synchronous belt pulley to rotate, the first synchronous belt pulley drives the second synchronous belt pulley to rotate through the synchronous belt, the second synchronous belt pulley further drives the rotating main shaft connected with the second synchronous belt pulley to rotate, and the rotating main shaft is connected with the process tank body, so that the process tank body is also driven to rotate. Through the structural design, the angle inclination system is simple in overall structure and convenient to operate, and due to the fact that synchronous belt wheel transmission is adopted, the accuracy of the rotation angle of the process tank body and the stability of the rotation process are guaranteed.

Preferably, a rotary sealing system is further included, the rotary sealing system including a second drive; the technical groove comprises a groove body frame with an opening and a cover plate matched with the groove body frame, the cover plate is rotatably connected with the groove body frame through a hinge mechanism, and an output shaft of a second driving device is connected with the cover plate and can drive the cover plate to overturn.

In this technical scheme, through adopting above structural design, when needs are sealed with the technology cell body, accessible second drive arrangement control apron realizes sealed with the cooperation of cell body frame, and the realization technology cell body that such structural design can be automatic is sealed, raises the efficiency.

Preferably, the second driving device comprises two cylinders, the two cylinders are respectively arranged on two sides of the cover plate, and piston rods of the two cylinders are respectively connected to two ends of the cover plate.

Among this technical scheme, through structural design more than adopting, adopt opening and shutting of cylinder drive apron, the cylinder is compared in other electric actuator, and the operation is more convenient, and does not have special requirement to service environment, can realize non-maintaining basically. In addition, when the opening and closing speed of the cover plate needs to be adjusted, stable speed control can be simply realized by only adjusting the one-way throttle valves arranged on the two sides of the air cylinder, and the speed adjusting device is very convenient and fast.

Preferably, the clamping part comprises a plurality of supporting columns, and clamping grooves for clamping the outer circular surface of the wafer are arranged on the supporting columns.

In this technical scheme, through set up the draw-in groove on the support column to set up the support column in the process chamber, this degree of difficulty of having simplified the draw-in groove installation on the one hand, on the other hand is favorable to improving the stability of draw-in groove.

Preferably, the side wall of the process tank body is provided with an air exhaust opening and a pressure relief opening, the air exhaust opening is used for being connected with an air exhaust device, and the position of the air exhaust opening is higher than the height of the treatment liquid in the process chamber.

Among this technical scheme, through adopting above structural design, utilize the extraction opening, be favorable to the process cell body to connect outside air exhaust device like the vacuum pump, and then be favorable to reducing the pressure of the internal gas of process cell to be favorable to the treatment fluid to steadily get into the process chamber under the effect of atmospheric pressure, also be favorable to reducing the dissolved quantity of the internal gas of treatment fluid, and discharge the bubble that blocks in the structures such as hole on the wafer more thoroughly.

Preferably, the bottom of the process tank body is provided with a liquid inlet and a liquid outlet, the liquid inlet is used for inputting the treatment liquid, and the liquid outlet is used for discharging the treatment liquid.

In this technical scheme, through structural design more than adopting, utilize the inlet that sets up in the bottom for the treatment fluid can steadily get into the process chamber, is favorable to reducing the fluctuation of treatment fluid.

A wafer electroplating pretreatment system comprises the wafer electroplating pretreatment equipment.

In the technical scheme, through adopting the structure, the bubbles in the holes on the surface of the wafer are replaced by the treatment liquid and overflow by utilizing the wafer electroplating pretreatment equipment, so that an excellent pretreatment effect is realized.

Preferably, the vacuum system comprises a vacuum pump and a vacuum pipeline, and the vacuum pump is connected with the pumping port through the vacuum pipeline.

In the technical scheme, the wafer electroplating pretreatment equipment is vacuumized by the vacuum pump through the structural design, so that the wafer electroplating pretreatment equipment is kept in a vacuum state, treatment liquid can smoothly enter the process cavity under the action of atmospheric pressure, and bubbles clamped in structures such as holes on the wafer can be more thoroughly discharged.

Preferably, the liquid storage tank is connected with the liquid inlet through the liquid inlet pipe, and the liquid discharge pipe is connected with the liquid discharge port.

Among this technical scheme, through structural design more than adopting, utilize the inlet to carry the treatment fluid from the reservoir to the process chamber, entire system simple structure, the simple operation has very high economic benefits, and because the inlet sets up the bottom at the technology cell body, this makes the treatment fluid can get into the process chamber steadily, is favorable to reducing the fluctuation of treatment fluid.

Preferably, the system further comprises a control system, and the control system controls various parameters of the wafer electroplating pretreatment system.

In the technical scheme, the control system can be used for controlling parameters such as rotation time, angle and speed of the angle tilting system, frequency of swing, amplitude of swing and the like. Of course, when the vacuum system, the liquid inlet and outlet system and the rotary sealing system are arranged, the control system can also be used for controlling the parameters such as the vacuum pumping time and the vacuum degree of the vacuum system, the liquid inlet and outlet time and the liquid flow of the liquid inlet and outlet system, the time and the speed for opening and closing the cover plate of the rotary sealing system and the like, so that the automatic management is realized.

A wafer electroplating pretreatment method adopts any one of the wafer electroplating pretreatment equipment, and comprises the following steps:

s10, placing the wafer into the process chamber, fixing the wafer by the clamping part, and sealing the process tank body;

s20, controlling an angle inclination system to drive the process tank body to rotate to a preset angle and then swinging;

s30, injecting the processing liquid into the process cavity to soak the wafer in the processing liquid;

s40, controlling the angle tilting system to stop swinging and reset;

and S50, recovering the normal state in the process chamber, taking out the wafer, and finishing the pretreatment process.

In the technical scheme, before the treatment liquid is injected into the process cavity, the angle inclination system is controlled to drive the process groove body to rotate to a preset angle and then swing, so that air in the deep hole structure with the high depth-to-width ratio can be soaked, extruded and discharged by the treatment liquid, after liquid injection is completed, in the process of inclined swinging and rotating of the process groove body, micro bubbles continuously generated in the treatment liquid under the negative pressure condition can overflow a wafer surface boundary layer under the interaction of buoyancy and viscous force and the inclined swinging guide, and rise to the outside of the free surface boundary layer through the buoyancy and then diffuse to the air after breaking, so that the micro bubbles do not break on the surface of the wafer, the damage of a fine structure of the wafer is prevented, and the pretreatment effect is improved.

Preferably, between step S10 and step S20, step S11 is further included: and pumping the gas in the process chamber by using an air pumping device to stabilize the air pressure in the process chamber at a preset value.

In the technical scheme, the process cavity is vacuumized, so that the air pressure in the process cavity is reduced, the gas in the deep hole is favorably replaced by the treatment liquid, the dissolving amount of the gas in the treatment liquid is favorably reduced, and bubbles in the treatment liquid are discharged.

Preferably, in step S11, the preset value of the air pressure is less than or equal to 0.08 Mpa.

In the technical scheme, the principle of enabling the gas volume to expand and overflow by vacuumizing is mainly based on an ideal gas state equation of PV (equal to nRT), and under the condition that the temperature is not changed, according to a formula of PV (equal to nRT), the vacuum system exhausts air to enable the air pressure P in a process chamber to be reduced, so that the volume V of the gas is expanded, and the gas in the deep hole is replaced by the processing liquid. Through calculation, when the vacuum degree of the process cavity is stabilized at 0.08MPa or below, the deep hole is easier to be filled with the treatment liquid, and the aim of pretreatment is fulfilled.

Preferably, in step S10, the second driving device is controlled to close the cover plate of the process tank body to realize the sealing of the process tank body.

In the technical scheme, the cover plate is controlled by the second driving device to be matched with the groove body frame to realize sealing, so that the automatic control of sealing is realized.

Preferably, in step S20, the first driving device is controlled to drive the first synchronous pulley to rotate, the first synchronous pulley drives the process tank to rotate after being driven by the second synchronous pulley and the rotating main shaft, and the first driving device is controlled to swing the process tank according to the preset frequency and amplitude after the process tank rotates to the preset angle.

In the technical scheme, the process tank body is driven to rotate by adopting a synchronous pulley transmission mode, so that the accuracy of the rotation angle of the process tank body and the stability of the rotation process are ensured.

Preferably, the preset angle ranges from 3 degrees to 5 degrees.

In the technical scheme, the inclination angle range of the process tank body is between 3 degrees and 5 degrees, on one hand, the working pressure of an angle inclination system can be reduced, the stability of equipment is improved, and on the other hand, in the angle range, when bubbles in the holes are discharged by means of the tension of the treatment liquid, the bubbles can smoothly overflow.

Compared with the prior art, the invention has the following beneficial effects:

1. the wafer electroplating pretreatment equipment and the wafer electroplating pretreatment system provided by the invention have simple structures, the wafer is fixed in the process tank body by utilizing the clamping part arranged in the process chamber, and the wafer is inclined and swung together with the process tank body in the pretreatment process through the design of the angle inclination system, so that the air in the hole is favorably replaced and overflowed by the treatment liquid, and the excellent pretreatment effect is realized.

2. According to the wafer electroplating pretreatment equipment and system provided by the invention, the angle inclination system is positioned outside the process tank body, so that on one hand, the sealing performance of the process tank body is greatly improved, and the vacuum degree is ensured in a vacuum environment, on the other hand, a driving source, namely the angle inclination system, is not required to be subjected to waterproof treatment and corrosion-resistant treatment, and the economic benefit is greatly improved.

3. According to the wafer electroplating pretreatment equipment and system provided by the invention, an automatic rotary sealing system can be selected for vacuum sealing, and the whole vacuum process cavity is inclined at a certain angle by combining an angle inclination system, so that the stability and uniformity of pretreatment can be greatly ensured, the quality and efficiency of wafers are improved, and the cost is reduced.

4. Before the treatment liquid is injected into the process cavity, the angle tilting system is controlled to drive the process groove body to rotate to a preset angle and then swing, so that air in a deep hole structure with a high depth-to-width ratio can be soaked, extruded and discharged by the treatment liquid, after liquid injection is completed, micro bubbles continuously generated in the treatment liquid under the negative pressure condition can overflow a wafer surface boundary layer under the interaction of buoyancy and viscous force and the guidance of tilting swing in the process of tilting swing and rotation of the process groove body, and rise to the outside of a free surface boundary layer through buoyancy and then diffuse to the air after the boundary layer is broken, so that the micro bubbles are not broken on the surface of the wafer, the damage of a fine structure of the wafer is prevented, and the pretreatment effect is improved.

Drawings

Other features, objects and advantages of the invention will become more apparent upon reading of the detailed description of non-limiting embodiments with reference to the following drawings:

FIG. 1 is a diagram showing the effect of pretreatment using the prior art;

FIG. 2 is a first schematic structural diagram of a wafer plating pretreatment apparatus according to a first embodiment of the present invention;

FIG. 3 is a second schematic structural view of the wafer plating pretreatment apparatus according to the first embodiment of the present invention;

FIG. 4 is a third schematic structural view illustrating a first embodiment of a wafer plating pretreatment apparatus according to the present invention;

FIG. 5 is a block diagram of a wafer plating pretreatment method according to an embodiment of the present invention.

The figures show that:

101-wafer treatment liquid;

102-holes;

103-deep hole

The invention

200-wafer electroplating pretreatment equipment;

21-a process tank body;

22-angle tilt system;

23-a process chamber;

25-a first drive;

26-a first synchronous pulley;

27-a second synchronous pulley;

28-synchronous belt;

29-rotating the spindle;

30-a cavity clamping plate;

31-an air extraction opening;

32-liquid inlet;

33-a rotary seal system;

34-a second drive;

35-a pressure relief vent;

36-tank frame;

37-cover plate;

38-hinge mechanism;

39-support column;

41-wafer

Detailed Description

In order to make the objects, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are some embodiments of the present application, but not all embodiments. The components of the embodiments of the present application, generally described and illustrated in the figures herein, can be arranged and designed in a wide variety of different configurations.

Thus, the following detailed description of the embodiments of the present application, presented in the accompanying drawings, is not intended to limit the scope of the claimed application, but is merely representative of selected embodiments of the application. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.

It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, it need not be further defined and explained in subsequent figures. Further, all directional indicators in this application (such as up, down, left, right, front, back, bottom …) are only used to explain the relative positional relationship between the components, the motion, etc. at a particular attitude (as shown in the drawings), and if the particular attitude changes, the directional indicator changes accordingly. Further, the descriptions in this application referring to "first", "second", etc. are for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicit to the number of technical features indicated.

Example 1

As shown in fig. 2 to 4, the present embodiment provides a wafer plating pretreatment apparatus 200, which includes a process tank 21 and an angle tilting system 22; a process cavity 23 for containing a treatment solution is formed inside the process tank body 21, a clamping portion is arranged in the process cavity 23, and the clamping portion is used for clamping the outer circular surface of the wafer 41, so that the wafer 41 is fixed inside the process cavity 23; the angle tilting system 22 is connected with the process tank 21, and the angle tilting system 22 can drive the process tank 21 to rotate integrally, for example, the process tank 21 is driven to rotate and tilt to a certain angle from a horizontal position and then slightly swing, so that the wafer 41 is driven to tilt relative to the horizontal surface and swing at a certain speed.

When the wafer 41 swings, the processing liquid is carried by the surface of the wafer 41 and fills the holes on the surface of the wafer 41, and in combination with the relative inclination of the wafer 41 and the liquid level of the processing liquid, the gas in the holes overflows upwards, so that the purpose of replacing the bubbles in the holes with the processing liquid is achieved, and the expected pretreatment effect is achieved. Because the angle inclination system 22 is positioned outside the process tank body 21, on one hand, the whole sealing performance of the process tank body 21 is greatly improved, on the other hand, the driving source, namely the angle inclination system 22, is not required to be subjected to waterproof treatment or corrosion-resistant treatment, and the economic benefit is greatly improved.

As a preferred embodiment, the angular tilting system 22 comprises a first drive means 25, a first synchronous pulley 26, a second synchronous pulley 27 and a rotating main shaft 29; the first driving device 25 may be a driving motor, an output shaft of which is connected to a first synchronous pulley 26, the first synchronous pulley 26 is linked to a second synchronous pulley 27 through a synchronous belt 28, the second synchronous pulley 27 is connected to a rotary spindle 29, and the rotary spindle 29 is connected to the process tank 21. Specifically, as shown in fig. 3, the two sides of the process tank 21 are clamped by the cavity clamping plates 30, the rotating main shaft 29 is transversely arranged between the cavity clamping plates 30 on the two sides, and one end of the rotating main shaft 29 is connected with the second synchronous pulley 27, so that when the first driving device 25 works, the first synchronous pulley 26 rotates to drive the second synchronous pulley 27 to synchronously rotate, the second synchronous pulley 27 further drives the rotating main shaft 29 connected with the second synchronous pulley to rotate, and the rotating main shaft 29 drives the process tank 21 to rotate through the effect of the cavity clamping plates 30. In this embodiment, the process tank 21 may be rotated upward to an inclined state by the first driving device 25, or may be rotated upward and downward repeatedly at a certain frequency to swing.

As a preferred embodiment, further comprises a rotary sealing system 33, the rotary sealing system 33 comprises a second driving device 34, the second driving device 34 comprises two air cylinders; the process tank 21 comprises a tank frame 36 with an opening, and a cover plate 37 matched with the tank frame 36, wherein the cover plate 37 is rotatably connected with the tank frame 36 through a hinge mechanism 38. The two cylinders are respectively arranged at two sides of the cover plate 37, and piston rods of the two cylinders are respectively connected to two ends of the cover plate 37. When the process tank body 21 needs to be sealed, the piston rod of the air cylinder retracts, the cover plate 37 rotates to be matched with the tank body frame 36 through the hinge mechanism 38, the cover plate 37 closes the opening of the tank body frame 36, and a sealing ring can be arranged at the position where the tank body frame 36 is matched with the cover plate 37, so that the sealing performance is improved. When the process tank 21 needs to be opened to put in or take out the wafer 41, the piston rod of the cylinder extends, thereby pushing the cover plate 37 to rotate in the opposite direction so as to reset. In this embodiment, the rotary sealing system 33 is designed to ensure the sealing performance of the process chamber 23 and improve the pretreatment effect.

As a preferred embodiment, as shown in fig. 3, the sidewall of the process tank is provided with an air exhaust port 31 and a pressure relief port 35, the air exhaust port 31 is used for connecting an air exhaust device, and the position of the air exhaust port 31 is higher than the height of the treatment liquid in the process chamber 23. When the process cavity 23 needs to be vacuumized, the process cavity 23 can be connected with an external air pumping device such as a vacuum pump through the air pumping port 31, the air pressure in the process cavity 23 is continuously reduced by the air pumping device, according to the ideal gas state equation of PV ═ nRT, under the condition that the temperature is not changed, the air pressure is reduced, the air pressure P in the process cavity 23 is reduced, the volume V of gas can be expanded, the gas is discharged from the holes, the treatment liquid is let to be positioned, meanwhile, the vacuum degree of the process cavity 23 is maintained at a certain level, the dissolving amount of the gas in the treatment liquid is favorably reduced, and therefore the discharge of bubbles in the treatment liquid is favorably realized.

As a preferred embodiment, as shown in FIG. 3, a liquid inlet 32 and a liquid outlet are provided at the bottom of the tank body 21, wherein the liquid inlet 32 is used for inputting the treatment liquid and the liquid outlet is used for discharging the treatment liquid. In this embodiment, the treatment liquid is input from the outside through the liquid inlet 32 formed in the bottom, and the treatment liquid can smoothly enter the process tank body 21, so that the fluctuation of the treatment liquid in the injection process is reduced, the generation of bubbles is reduced, and a better pretreatment effect is realized.

As a preferred embodiment, as shown in fig. 4, the clamping portion includes a plurality of supporting pillars 39, and the supporting pillars 39 are provided with clamping grooves for clamping the outer circumferential surface of the wafer 41. This embodiment is through setting up the draw-in groove on support column 39 to set up support column 39 in process cavity 23, this one side has simplified the degree of difficulty of draw-in groove installation, and on the other hand is favorable to improving the stability of draw-in groove.

In practical applications, the wafer plating pretreatment apparatus 200 of the present embodiment may adopt the following operation methods: firstly, a wafer 41 can be placed on the supporting column 39 in the process chamber 23 by using a wafer vacuum suction pen and fixed by using a clamping groove; then the second driving device 34 of the rotary sealing system 33 is controlled to close the cover plate 37 of the process tank body 21 for sealing; further, an external air extractor is used for extracting the gas in the process cavity 23, so that the vacuum degree in the process cavity 23 is stabilized below 0.08 MPa; further, the first driving device 25 is controlled to drive the first synchronous belt pulley 26 to rotate, the first synchronous belt pulley 26 drives the process tank body 21 to rotate to a preset angle from the horizontal position to one side and then to slightly swing after being transmitted by the second synchronous belt pulley 27 and the rotating main shaft 29, and the value range of the preset angle is between 3 degrees and 5 degrees; then, injecting a treatment liquid into the process chamber 23 from an external liquid storage tank to soak the wafer 41 in the treatment liquid; after the wafer 41 is soaked for the preset time, controlling the first driving device 25 to reset, so that the process tank body 21 stops swinging and returns to the initial position, breaking vacuum through the pressure relief port 35, and discharging the treatment liquid through the liquid discharge port; then, the second driving device 34 of the rotary sealing system 33 opens the cover plate 37, and the wafer 41 is taken out therefrom, thereby ending the round of pretreatment operation.

Example 2

The present embodiment provides a wafer plating pretreatment system, which comprises the wafer plating pretreatment apparatus 200 of embodiment 1, a vacuum system, a liquid inlet/outlet system, and a control system. Wherein, the vacuum system comprises a vacuum pump and a vacuum pipeline, the vacuum pump is connected with the air extraction port through the vacuum pipeline, thereby adjusting the air pressure in the process cavity 23; the liquid inlet and outlet system comprises a liquid inlet pipe, a liquid discharge pipe and a liquid storage tank, wherein the liquid storage tank is connected with the liquid inlet through the liquid inlet pipe so as to convey the treatment liquid into the process cavity 23. The control system is used for controlling various parameters of the wafer electroplating pretreatment system, such as the parameters of the rotation time, the rotation angle, the rotation speed, the swing frequency, the swing amplitude and the like of the angle tilting system 22, the parameters of the time, the speed and the like of opening and closing the cover plate 37 of the rotary sealing system 33, the parameters of the vacuumizing time, the vacuum degree and the like of the vacuum system, the time, the flow and the like of conveying treatment liquid of the liquid inlet and outlet system, and the like, and the automatic management is realized.

Example 3

FIG. 5 is a schematic representation of an embodiment of a pre-treatment method for electroplating a wafer according to the present invention. Specifically, the wafer electroplating pretreatment method mainly comprises the following steps:

s10, placing the wafer 41 into the process cavity 23, fixing the wafer by the clamping part, and sealing the process groove body 21;

s20, controlling the angle inclination system 22 to drive the process tank body 21 to rotate to a preset angle and then swing;

s30, injecting the processing liquid into the process cavity 23 to soak the wafer 41 in the processing liquid;

s40, controlling the angle tilting system 22 to stop swinging and reset;

and S50, recovering the normal state in the process chamber 23, taking out the wafer 41, and finishing the pretreatment process.

In this embodiment, for step S10, the wafer 41 may be placed on the supporting pillar 39 inside the process chamber 23 by using a wafer vacuum suction pen, and fixed by a slot, and the second driving device 34 of the rotary sealing system 33 is controlled to close the cover 37 of the process tank 21 for sealing; after the step S10, a vacuum pumping step S11 of pumping out the gas in the process chamber 23 by using a pumping device to stabilize the vacuum degree in the process chamber 23 to be less than 0.08 Mpa; then, step S20 is implemented, specifically: controlling a first driving device 25 to drive a first synchronous belt pulley 26 to rotate, wherein the first synchronous belt pulley 26 drives the process tank body 21 to rotate to a preset angle and then to slightly swing after being transmitted by a second synchronous belt pulley 27 and a rotating main shaft 29, and the value range of the preset angle is between 3 degrees and 5 degrees; then, step S30 is executed, that is, the processing liquid is injected into the process chamber 23 from an external liquid storage tank, so that the wafer 41 is soaked in the processing liquid; after the wafer 41 is immersed for the preset time, step S40 is executed, i.e. the first driving device 25 is reset, so that the process tank 21 stops swinging and returns to the initial position; then, step S50 is performed, in which the vacuum is broken through the pressure relief port, the processing liquid is discharged through the liquid discharge port, the cover plate 37 is opened by the second driving device 34 of the rotary sealing system 33, the wafer 41 is taken out therefrom, and the round of pretreatment operation is ended.

In the above operation steps, before the treatment liquid is injected into the process cavity, the angle tilting system is controlled to drive the process tank body to rotate to a preset angle and then swing, so that air in the deep hole structure with the high depth-to-width ratio can be soaked, extruded and discharged by the treatment liquid, after the liquid injection is completed, in the process of tilting and rotating the process tank body, micro bubbles continuously generated in the treatment liquid due to the negative pressure condition can overflow a wafer surface boundary layer under the interaction of buoyancy and viscous force and the guidance of tilting and swinging, and rise to the outside of the free surface boundary layer through the buoyancy and then diffuse to the air after being broken, so that the micro bubbles are not broken on the wafer surface, the damage of the wafer fine structure is prevented, and the pretreatment effect is improved.

It should be noted that the wafer pretreatment apparatus, system and method provided by the present invention can also be used for the corrosion treatment of wafers, thereby solving the problems of complex apparatus structure, inconvenient operation, high economic cost and the like caused by the need of corrosion-resistant treatment of the driving source in the prior art.

While the embodiments of the present invention have been described, it is clear that various changes and modifications can be made by workers in the field without departing from the technical spirit of the present invention.