阅读说明：本技术 多通道电容耦合式等离子体射流装置及工作方法 (Multi-channel capacitive coupling type plasma jet device and working method ) 是由 李洲龙 梁锐彬 朱利民 于 2021-08-24 设计创作，主要内容包括：本发明提供了一种多通道电容耦合式等离子体射流装置及工作方法,包括：气体导流和混合结构、等离子体发生器、射频电路以及进气管道；所述气体导流和混合结构通过所述进气管道连通所述等离子体发生器；所述射频电路电连接所述等离子体发生器；所述等离子体发生器内安装阳极板、阴极板以及绝缘介质板；所述阳极板和所述阴极板之间安装所述绝缘介质板,所述绝缘介质板设置有多个反应通道。本装置各射流单元的流量可分别独立控制,使得线状射流的去除函数可以精确计算和调控,因而可以实现复杂表面的精细、高效修形。(The invention provides a multi-channel capacitive coupling type plasma jet device and a working method, wherein the multi-channel capacitive coupling type plasma jet device comprises the following steps: the plasma generator comprises a gas diversion and mixing structure, a plasma generator, a radio frequency circuit and an air inlet pipeline; the gas diversion and mixing structure is communicated with the plasma generator through the gas inlet pipeline; the radio frequency circuit is electrically connected with the plasma generator; an anode plate, a cathode plate and an insulating medium plate are arranged in the plasma generator; the insulating medium plate is arranged between the anode plate and the cathode plate and provided with a plurality of reaction channels. The flow of each jet unit of the device can be independently controlled respectively, so that the removal function of the linear jet can be accurately calculated and regulated, and the fine and efficient shape modification of a complex surface can be realized.)

1. A multi-channel capacitively-coupled plasma jet apparatus, comprising: the device comprises a gas diversion and mixing structure (1), a plasma generator (2), a radio frequency circuit (3) and a gas inlet pipeline (4);

the gas diversion and mixing structure (1) is communicated with the plasma generator (2) through the gas inlet pipeline (4);

the radio frequency circuit (3) is electrically connected with the plasma generator (2);

an anode plate (22), a cathode plate (23) and an insulating medium plate (26) are arranged in the plasma generator (2);

the insulating medium plate (26) is arranged between the anode plate (22) and the cathode plate (23), and the insulating medium plate (26) is provided with a plurality of reaction channels (27).

2. The multi-channel capacitively-coupled plasma jet apparatus of claim 1, wherein: the anode plate (22), the cathode plate (23) and the insulating medium plate (26) are arranged in a plate shape and are parallel to each other;

the reaction channels (27) are arranged in a linear array along the inside of the insulating medium plate (26), and the reaction channels (27) penetrate through two ends of the insulating medium plate (26).

3. The multi-channel capacitively-coupled plasma jet apparatus of claim 2, wherein: the anode plate (22), the cathode plate (23) and the insulating medium plate (26) are sleeved in the positioning sleeve (24);

the locating sleeve (24) is square, and through holes are formed in two ends of the locating sleeve (24) and communicated with the reaction channel (27).

4. The multi-channel capacitively-coupled plasma jet apparatus as claimed in claim 3, wherein the plasma generator (2) further comprises: a gas flow control valve (21), a flow guiding structure (25) and a fixing structure (28);

one end of the positioning sleeve (24) is communicated with one end of the flow guide structure (25) through the through hole, and the other end of the flow guide structure (25) is communicated with one end of the gas flow control valve (21);

the gas flow control valves (21) are provided in plurality, and each gas flow control valve (21) is correspondingly connected with one reaction channel (27);

the gas flow control valve (21), the flow guide structure (25) and the positioning sleeve (24) are sleeved with the fixing structure (28) and fixed through the fixing structure (28).

5. The multi-channel capacitively-coupled plasma jet apparatus according to claim 4, wherein the gas guiding and mixing structure (1) comprises: an air source (11) and an air mixing and rectifying device (12);

a plurality of air sources (11) are arranged;

one ends of the gas sources (11) are connected with one ends of the gas mixed flow and rectifying devices (12) and are mixed and rectified through the gas mixed flow and rectifying devices (12).

6. The multi-channel capacitively-coupled plasma jet apparatus of claim 5, wherein: the other end of the gas mixed flow and rectifying device (12) is communicated with the other end of the gas flow control valve (21) through the gas inlet pipeline (4).

7. The multi-channel capacitively-coupled plasma jet device according to claim 6, wherein the radio frequency circuit (3) comprises: a radio frequency power supply (31), an impedance matching device (32) and a radio frequency power line interface (33);

the radio frequency power supply (31) is electrically connected with the impedance matching device (32), and the impedance matching device (32) is electrically connected with the radio frequency power line interface (33);

the radio frequency power line interface (33) is electrically connected with the anode plate (22) and the cathode plate (23).

8. The multi-channel capacitively-coupled plasma jet apparatus of claim 7, wherein: a workbench (6) is arranged below the plasma generator (2), and a workpiece (5) to be processed is placed on the workbench (6);

the end of the reaction channel (27) where the gas flow control valve (21) is not installed faces the workpiece (5) to be processed.

9. The multi-channel capacitively-coupled plasma jet apparatus of claim 8, wherein: the plurality of gas flow control valves (21) are electrically connected with a control system (7).

10. The method of operating a multi-channel capacitively-coupled plasma fluidic device of claim 9, comprising the steps of:

step S1, calculating the required material removal amount corresponding to each reaction channel (27) at each moment according to the target removal surface type, and calculating the reaction gas flow of each reaction channel (27) according to the required material removal amount;

step S2, adjusting each gas flow control valve (21) through the control system (7) according to the reaction gas flow calculation result;

step S3, opening the gas source (11) and the radio frequency power supply (31) to enable plasma to be excited and generate jet flow through the reaction channel (13);

step S4, through the cooperative control of each gas flow control valve (21), a continuous linear jet flow in the form of any removal amount distribution on the target straight line is realized;

and step S5, the shaping and polishing processing is realized by combining the motion trail planning of the workbench (6).

Technical Field

The invention relates to a design and a working method of an atmospheric plasma generating device, in particular to a multi-channel capacitive coupling type plasma jet device and a working method.

Background

The atmospheric plasma processing technology is a new processing method which is proposed and gradually developed in the 90 s of the 20 th century, and is a material removing mode of chemical etching. During processing, in an atmospheric environment, certain inert gases are ionized to form a plasma state, so that fluorine-containing reaction gas is excited under the condition to form active reaction atoms, and the active reaction atoms and a material to be processed are subjected to chemical reaction to generate a gas product, so that the material is removed. The atmospheric plasma processing has the advantages that other processing methods cannot simultaneously have, such as high material removal rate, non-contact processing cannot generate subsurface damage, the removal amount can be calculated through theoretical calculation and analysis, and the like, and therefore the atmospheric plasma processing is expected to be applied to processing of hard and brittle material free-form surface parts and surface microstructures thereof.

Atmospheric Plasma processing is mainly classified into three types, according to the classification of processing apparatuses, of microwave Plasma processing (MWP), capacitive Coupled Plasma processing (CCP), and Inductively Coupled Plasma processing (ICP). The temperature of the plasmas excited by the first two processes can reach 300-600 ℃, while the temperature of the plasmas excited by the CCP is lower and is different from dozens of DEG to hundreds of DEG. Therefore, it has less heat influence on the surface to be processed, and the shape modification and polishing etc. are finer.

However, the processing efficiency of a single plasma jet is low, and particularly when facing structures such as a complex free-form surface and the like, the processing speed is low, so that the requirement for rapidly and efficiently processing or polishing a large-area complex structural part in industrial production cannot be met; in comparison, a plurality of plasma jet flows are combined into a jet flow array, so that the processing area can be increased, and the processing efficiency is expected to be greatly improved. In particular, the patent hopes to solve the problem that plasma jet is combined into a jet array and is stable and effective.

Patent document CN110213872A discloses a plasma jet assist device comprising: the device comprises a detection control module, an interval adjuster and a grounding current-leading sheet; the detection control module is connected with the output end of a high-voltage power supply in the plasma jet device; the top surface of the interval regulator is provided with an opening and is positioned at the plasma jet nozzle, through holes and grooves are distributed on the bottom surface, and plasma jet generated by the plasma jet device flows out through the through holes on the bottom surface; the grounding drainage sheet is embedded into the bottom groove of the interval adjuster and is connected with a public ground; the detection control module is used for monitoring the voltage and current state of the plasma jet device in real time and disconnecting the high-voltage power supply of the plasma jet device when a fault occurs; the interval adjuster is used for controlling the length of the plasma jet and fixing the grounding current-leading piece; and the grounding current-guiding sheet is used for guiding the discharge plasma current.

Patent document CN106572585B discloses: a plasma generator includes a base assembly and a showerhead assembly; the base body assembly comprises a first shell and a first power supply circuit, wherein a ventilation cavity capable of supplying air is arranged in the first shell, and the first power supply circuit can be electrically connected with a power supply; the sprayer assembly can be detachably connected with the base body assembly, the sprayer assembly comprises a second shell and an ionization device, an ionization cavity is arranged in the second shell, and the ionization device ionizes gas in the ionization cavity into plasma flow; when the base body assembly is connected with the spray head assembly, the first shell is connected with the second shell, the first power supply circuit is electrically connected with the ionization device, and the ventilation cavity is communicated with the ionization cavity. However, the disadvantages of the patent document are: the device can only regulate and control the area of jet flow, so the technical problem of multi-channel jet flow cannot be solved.

Patent document CN104936370B discloses: an adjustable device of an atmospheric pressure low temperature plasma jet array, wherein: the single plasma generator and the stud sleeve are fixed through gluing; the stud sleeve is in threaded connection with the box body, and the threaded connection is lubricated and sealed by sealing silicone grease; working gas is introduced into the upper end of the box body and uniformly flows into the plasma generator through the filtering wire mesh; the screwing of the stud sleeve can adjust the position of the stud sleeve relative to the box body to carry out up-and-down adjustment, and further can drive the plasma generator to carry out up-and-down adjustment; the adjusting distance can be calculated through the number of screwing turns and the thread pitch; the plasma jet array can be adjusted in various combinations by adjusting the up-and-down position of a single plasma generator, and is suitable for different array forms of the existing linear array and annular array. However, the disadvantages of the patent document are: the patent focuses on adjusting the array, has the problem that a plurality of groups of anodes and cathodes interfere with each other, and can not stably and effectively realize the combination of plasma jet into a jet array.

Disclosure of Invention

Aiming at the defects in the prior art, the invention aims to provide a multi-channel capacitive coupling type plasma jet device and a working method.

The invention provides a multi-channel capacitive coupling type plasma jet device, which comprises: the plasma generator comprises a gas diversion and mixing structure, a plasma generator, a radio frequency circuit and an air inlet pipeline;

the gas diversion and mixing structure is communicated with the plasma generator through the gas inlet pipeline;

the radio frequency circuit is electrically connected with the plasma generator;

an anode plate, a cathode plate and an insulating medium plate are arranged in the plasma generator;

the insulating medium plate is arranged between the anode plate and the cathode plate and provided with a plurality of reaction channels.

Preferably, the anode plate, the cathode plate and the insulating medium plate are provided in a plate shape and parallel to each other;

the reaction channels are arranged in a linear array along the inside of the insulating medium plate and run through the two ends of the insulating medium plate.

Preferably, the anode plate, the cathode plate and the insulating medium plate are sleeved in a positioning sleeve;

the positioning sleeve is set to be square, and through holes are formed in two ends of the positioning sleeve and communicated with the reaction channel.

Preferably, the plasma generator further comprises: the gas flow control valve, the flow guide structure and the fixing structure;

one end of the positioning sleeve is communicated with one end of the flow guide structure through the through hole, and the other end of the flow guide structure is communicated with one end of the gas flow control valve;

the number of the gas flow control valves is multiple, and each gas flow control valve is correspondingly connected with one reaction channel;

the gas flow control valve, the flow guide structure and the outer side of the positioning sleeve are sleeved with the fixing structure and fixed through the fixing structure.

Preferably, the gas guiding and mixing structure comprises: the gas source and the gas mixing and rectifying device;

the air source is provided with a plurality of air sources;

one end of each of the gas sources is connected with one end of the gas mixed flow and rectifying device, and the gas mixed flow and the rectifying device are used for mixing and rectifying.

Preferably, the other end of the gas mixed flow and rectifying device is communicated with the other end of the gas flow control valve through the gas inlet pipeline.

Preferably, the radio frequency circuit comprises: the radio frequency power supply, the impedance matching device and the radio frequency power line interface;

the radio frequency power supply is electrically connected with the impedance matching device, and the impedance matching device is electrically connected with the radio frequency power line interface;

the radio frequency power line interface is electrically connected with the anode plate and the cathode plate.

Preferably, a workbench is arranged below the plasma generator, and a workpiece to be processed is placed on the workbench;

one end of the reaction channel, which is not provided with the gas flow control valve, faces to the workpiece to be processed.

Preferably, a plurality of said gas flow control valves are electrically connected to a control system.

Preferably, an operating method of the multi-channel capacitive coupling type plasma jet device comprises the following steps:

step S1, calculating the required material removal amount corresponding to each reaction channel at each moment according to the target removal surface type, and calculating the reaction gas flow of each reaction channel according to the required material removal amount;

step S2, adjusting each gas flow control valve through the control system according to the reaction gas flow calculation result;

step S3, opening the gas source and the radio frequency power supply to excite the plasma and generate jet flow through the reaction channel;

step S4, through the cooperative control of each gas flow control valve, the continuous linear jet flow in the form of arbitrary removal amount distribution on the target straight line is realized;

and step S5, combining the movement track planning of the workbench to realize the shape correction and polishing processing.

Preferably, the material of the anode plate and the cathode plate includes stainless steel and aluminum alloy.

Preferably, the material of the insulating medium plate includes ceramics and quartz glass.

Preferably, the locating sleeve material comprises ceramic and high temperature resistant plastic peek materials.

Preferably, the reaction channel cross section is 1mm x 1mm square, the reaction channel length is 30 mm.

Preferably, each of said gas flow control valves is individually controllable.

Compared with the prior art, the invention has the following beneficial effects:

1. the flow of each jet unit of the device can be independently controlled respectively, so that the removal function of the linear jet can be accurately calculated and regulated, and the fine and efficient shape modification of a complex surface can be realized.

2. The device adopts the flat electrode, has reasonable structure and can directly generate plasma continuous linear jet flow.

Drawings

Other features, objects and advantages of the invention will become more apparent upon reading of the detailed description of non-limiting embodiments with reference to the following drawings:

FIG. 1 is a schematic diagram of a connection structure of a multi-channel capacitively-coupled plasma jet apparatus;

FIG. 2 is a schematic perspective view of a plasma generator;

FIG. 3 is a schematic cross-sectional view of a plasma generator;

FIG. 4 is a cross-sectional view of the plasma generator;

shown in the figure:

Detailed Description

The present invention will be described in detail with reference to specific examples. The following examples will assist those skilled in the art in further understanding the invention, but are not intended to limit the invention in any way. It should be noted that it would be obvious to those skilled in the art that various changes and modifications can be made without departing from the spirit of the invention. All falling within the scope of the present invention.

Example 1

As shown in fig. 1 and 3, a multi-channel capacitively-coupled plasma jet apparatus includes: the device comprises a gas diversion and mixing structure 1, a plasma generator 2, a radio frequency circuit 3 and an air inlet pipeline 4; the gas diversion and mixing structure 1 is communicated with a plasma generator 2 through an air inlet pipeline 4, a radio frequency circuit 3 is electrically connected with the plasma generator 2, an anode plate 22, a cathode plate 23 and an insulating medium plate 26 are arranged in the plasma generator 2, the insulating medium plate 26 is arranged between the anode plate 22 and the cathode plate 23, and the insulating medium plate 26 is provided with a plurality of reaction channels 27. The gas guiding and mixing structure 1 comprises: the gas source 11 and the gas mixed flow and rectifying device 12, the gas source 11 is provided with a plurality of, and the gas mixed flow and rectifying device 12 one end is connected and is mixed and rectified through gas mixed flow and rectifying device 12 to a plurality of gas sources 11 one end. The radio frequency circuit 3 includes: the radio frequency power supply 31 is electrically connected with the impedance matching device 32, the impedance matching device 32 is electrically connected with the radio frequency power line interface 33, and the radio frequency power line interface 33 is electrically connected with the anode plate 22 and the cathode plate 23. The plurality of gas flow control valves 21 are electrically connected to the control system 7. The anode plate 22, the cathode plate 23 and the insulating medium plate 26 are arranged in a plate shape and are parallel to each other, a plurality of reaction channels 27 are arranged in a linear array along the inside of the insulating medium plate 26, and the reaction channels 27 penetrate through two ends of the insulating medium plate 26.

As shown in FIGS. 2 and 4, the anode plate 22, the cathode plate 23 and the insulating medium plate 26 are sleeved in the positioning sleeve 24, the positioning sleeve 24 is square, and through holes are arranged at two ends of the positioning sleeve 24 and communicated with the reaction channel 27. The plasma generator 2 further includes: gas flow control valve 21, water conservancy diversion structure 25 and fixed knot construct 28, the through-hole intercommunication water conservancy diversion structure 25 one end is passed through to position sleeve 24 one end, and the water conservancy diversion structure 25 other end communicates gas flow control valve 21 one end, and gas flow control valve 21 is provided with a plurality ofly, and every gas flow control valve 21 corresponds and connects a reaction channel 27, and gas flow control valve 21, water conservancy diversion structure 25 and the 24 outside suit fixed knot constructs 28 of position sleeve are fixed through fixed knot constructs 28. The other end of the gas mixed flow and rectification device 12 is communicated with the other end of the gas flow control valve 21 through the gas inlet pipeline 4. A workbench 6 is arranged below the plasma generator 2, a workpiece 5 to be processed is placed on the workbench 6, and one end of the reaction channel 27, which is not provided with the gas flow control valve 21, faces the workpiece 5 to be processed.

The invention also provides a working method of the multi-channel capacitive coupling type plasma jet device, which comprises the following steps: step S1, calculating the required material removal amount corresponding to each reaction channel 27 at each moment according to the target removal surface type, and calculating the reaction gas flow rate of each reaction channel 27 according to the required material removal amount; step S2, adjusting each gas flow control valve 21 by the control system 7 according to the reaction gas flow calculation result; step S3, opening the gas source 11 and the radio frequency power source 31 to excite the plasma and generate jet flow through the reaction channel 13; step S4, the continuous linear jet flow in the form of the arbitrary removal amount distribution on the target straight line is realized by cooperatively controlling each gas flow rate control valve 21; and step S5, the shaping and polishing processing is realized by combining the motion trail planning of the workbench 6.

Example 2

Example 2 is a preferred example of example 1.

As shown in fig. 1, the present invention provides a multi-channel capacitively-coupled plasma jet apparatus, comprising: the gas flow guiding and mixing structure 1, the gas flow control valve 21, the plasma generator 2, the radio frequency power line interface 33 and other functional components. The gas diversion and mixing structure 1 is used for introducing, uniformly mixing and rectifying a fluorine-containing reaction gas and an inert gas; a gas flow control valve 21 for controlling in real time the flow of gas into the plasma generator 2 and into each reaction channel 27 in the generator; the plasma generator 2 adopts a high-frequency electromagnetic field to excite inert gas into a plasma state under atmospheric pressure, so that reaction gas is excited to generate active particles in a plasma active atmosphere; the radio frequency power line interface 33 is used for externally connecting a radio frequency circuit 3 capable of generating a high frequency electromagnetic field and forming a loop.

The gas flow guiding and mixing structure 1 is internally provided with a gas source 11, a gas flow guiding pipeline and a gas flow mixing and rectifying device 12. The function of the device is to introduce the inert gas helium, the reaction gas carbon tetrafluoride and the auxiliary gas oxygen from the gas source 11, and to mix and rectify them sufficiently by the gas mixing and rectifying device 12 so as to generate the desired reaction in the plasma generator 2.

As shown in fig. 2 to 4, the plasma generator 2 is mainly composed of an anode plate 22, a cathode plate 23, and an insulating dielectric plate 26, and is externally provided with a positioning sleeve 24. The anode plate 22 and the cathode plate 23 are made of stainless steel or aluminum alloy, are parallel to each other, and are respectively connected with the anode and the cathode of the radio frequency power line interface 33. The insulating dielectric plate 26 is made of ceramic or quartz glass, and is mounted between the anode plate 22 and the cathode plate 23 to form a capacitor, thereby constituting a capacitively-coupled atmospheric plasma generator. The anode plate 22, cathode plate 23 and insulating media plate 26 are encased in a locating sleeve 24 made of ceramic or high temperature resistant plastic peek material. The insulating dielectric plate 26 divides a plurality of reaction channels 27 arranged in a line shape, and can independently generate plasma and reactive particles. Each reaction channel 27 has a cross-section of 1mm x 1mm square and the length of the reaction channel 27 is 30mm to ensure high resolution in processing.

The gas flow rate of each reaction channel 27 can be individually controlled. At the gas inlets of the respective reaction channels 27, gas flow control valves 21 are connected, respectively. After flowing through the gas flow control valve 21, the gas enters each reaction channel 27 through the flow guiding structure 25 between the reaction channels 27 to participate in the reaction. The flow rate of each reaction channel 27, and thus the fluidic active particle flux of each reaction channel 27, can be varied by controlling each gas flow control valve 21 as required by the process.

The radio frequency circuit 3 externally connected with the radio frequency power line interface 33 comprises a radio frequency power supply 31 and an impedance matching device 32, and provides energy input equivalent to a pure resistance circuit for the plasma generator 2. Wherein, the radio frequency power source 31 is used for providing energy, so that a sufficiently high electric field environment is formed between the anode plate 22 and the cathode plate 23; the impedance matching device 32 can reduce the reflected power in the circuit to a level close to zero, thereby ensuring that the energy of the rf power source 31 is smoothly and efficiently transferred to the load side.

In this embodiment, helium gas can be selected as inert gas for exciting into plasma state in the plasma generator 2 to provide atmosphere required for reaction; selecting carbon tetrafluoride as reaction gas, dissociating active fluorine atoms in a plasma generator 2, and taking the active fluorine atoms as reactive particles to directly participate in the material removal reaction; and oxygen is selected as auxiliary gas, so that the reaction efficiency is improved.

After the system is built and debugged, when the processing or calibration and other experiments are started, the removal function model of each reaction channel 27 at each moment can be calculated according to the target removal amount, and the reaction gas flow of each reaction channel 27 is calculated according to the removal function model; after theoretical calculation is completed, each gas flow control valve 21 is independently connected with the control system 7, so that the control system 7 can automatically control the state of each gas flow control valve 21 at each time in the processing according to the calculation result; then, the gas source 11 and the radio frequency power source 31 are turned on, so that the plasma is excited and jet flows are generated at the outlets of the respective reaction channels 27; then, considering the overlapping effect of the jet flow of the adjacent reaction channel 27, simulating the flux distribution of active particles of a linear jet flow source, and realizing continuous linear jet flow in any removal amount distribution form on a target straight line by cooperatively controlling each gas flow control valve 21; and finally, high-precision and high-efficiency atmospheric plasma modification and polishing processing facing to large-area optical elements can be realized by combining the movement track planning of the workbench 6.

In the description of the present application, it is to be understood that the terms "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", and the like indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience in describing the present application and simplifying the description, but do not indicate or imply that the referred device or element must have a specific orientation, be constructed in a specific orientation, and be operated, and thus, should not be construed as limiting the present application.

The foregoing description of specific embodiments of the present invention has been presented. It is to be understood that the present invention is not limited to the specific embodiments described above, and that various changes or modifications may be made by one skilled in the art within the scope of the appended claims without departing from the spirit of the invention. The embodiments and features of the embodiments of the present application may be combined with each other arbitrarily without conflict.