阅读说明：本技术 用于传感器设备或麦克风设备的微机械构件 (Micromechanical component for a sensor or microphone device ) 是由 H·韦伯 A·朔伊尔勒 J·弗里茨 P·施莫尔格鲁贝尔 S·马赫 T·弗里德里希 于 2021-05-18 设计创作，主要内容包括：本发明涉及一种用于传感器设备或麦克风设备的微机械构件,其具有：衬底；框架结构,其布置在衬底表面和/或至少一个中间层上；膜片,其跨越由框架结构至少部分地围绕的内部体积,其中,内部体积以气密的方式如此密封,使得膜片能够借助存在于其膜片内侧上的内压(p-(1))与存在于其膜片外侧上的外压(p-(2))之间的压差而翘曲,其中,该微机械构件具有布置在内部空间中的弯曲梁结构,该弯曲梁结构具有固定在框架结构、衬底表面和/或至少一个中间层上的至少一个锚固区域且具有至少一个自承载区域,该至少一个自承载区域通过至少一个耦合结构如此连接在膜片的膜片内侧上,使得至少一个自承载区域能够借助膜片的翘曲而弯曲。(The invention relates to a micromechanical component for a sensor or microphone device, comprising: a substrate; a frame structure arranged on the substrate surface and/or on the at least one intermediate layer; a membrane spanning an interior volume at least partially surrounded by a frame structure, wherein the interior volume is sealed in a gas-tight manner in such a way that the membrane can be acted upon by an internal pressure (p) present on the membrane inner side thereof 1 ) With external pressure (p) present on the outside of its diaphragm 2 ) Wherein the micromechanical component has a bending beam structure arranged in the interior space, which bending beam structure has a fastening to the frame structure, the substrate surface and/or at least one intermediate memberAt least one anchoring region on the layer and having at least one self-supporting region, which is connected to the membrane inner side of the membrane by at least one coupling structure in such a way that the at least one self-supporting region can be bent by means of a warpage of the membrane.)

1. A micromechanical component for a sensor device or a microphone device, the micromechanical component having:

a substrate (10) having a substrate surface (10 a);

a frame structure (14) arranged on the substrate surface (10a) and/or at least one intermediate layer (12a, 12b) at least partially covering the substrate surface (10 a); and

a diaphragm (16) spanning an internal volume (18) at least partially surrounded by the frame structure (14) such that a diaphragm inner side (16a) of the diaphragm (16) abuts the internal volume (18);

wherein the inner volume (18) is sealed in a gas-tight manner in such a way that the membrane (16) can be acted upon by an internal pressure (p) present on a membrane inner side (16a) thereof₁) Is exposed to an external pressure (p) present on a diaphragm outer side (16b) of the diaphragm (16) oriented away from the diaphragm inner side (16a)₂) The pressure difference therebetween to be warped,

it is characterized in that

A bending beam structure (34) arranged in the interior (18), having at least one anchoring region (36) fixed to the frame structure (14), the substrate surface (10a) and/or the at least one intermediate layer (12a, 12b) and having at least one self-supporting region (38) which is connected to the membrane inner side (16a) of the membrane (16) by at least one coupling structure (40) in such a way that the at least one self-supporting region (38) can be bent by means of the warpage of the membrane (16).

2. Micromechanical component according to claim 1, wherein the at least one coupling structure (40) is formed entirely of at least one electrically conductive material (50).

3. Micromechanical component according to claim 1, wherein the at least one coupling structure (40) is at least partially formed from at least one electrically insulating material.

4. Micromechanical component according to any of the preceding claims, wherein the at least one self-supporting region (38) of the bending beam structure (34) spans at least one counter electrode (42) arranged on the substrate surface (10a) and/or the at least one intermediate layer (12a, 12b), wherein the at least one counter electrode (42) is electrically insulated from the at least one self-supporting region (38) of the bending beam structure (34) and is capable of intercepting measurement signals between the at least one self-supporting region (38) of the bending beam structure (32) and the at least one counter electrode (42).

5. Micromechanical component according to any of the preceding claims, wherein at least one protruding stop structure (64) is formed on at least one surface of the bending beam structure (34) oriented away from the membrane (16) from the carrier region (38).

6. Micromechanical component according to any of the preceding claims, wherein the curved beam structure (34) and the at least one reference electrode (28) and/or at least one measuring electrode (22) are formed by a first semiconductor layer and/or a metal layer (46), the at least one reference electrode being fixed on the frame structure (14), the substrate surface (10a) and/or the at least one intermediate layer (12a, 12 b); and/or the membrane (16), the at least one coupling structure (40) and/or at least one suspension structure (24) are formed by a second semiconductor layer and/or a metal layer (50), by means of which suspension structure the at least one measuring electrode (22) is suspended on the membrane inner side (16 a).

7. A method for producing a micromechanical component for a sensor or microphone device, having the following steps:

forming a frame structure (14) on a substrate surface (10a) of a substrate (10) and/or on at least one intermediate layer (12a, 12b) at least partially covering the substrate surface (10 a); and

spanning an interior volume (18) at least partially surrounded by the frame structure (14) by means of a membrane (16) in such a way that a membrane inner side (16a) of the membrane (16) adjoins the interior volume (18);

wherein the inner volume (18) is sealed in a gas-tight manner in such a way that the membrane (16) can be acted upon by an internal pressure (p) present on a membrane inner side (16a) thereof₁) And presence ofAn external pressure (p) on a diaphragm outer side (16b) of the diaphragm (16) oriented away from the diaphragm inner side (16a)₂) The pressure difference therebetween to be warped,

the method is characterized by comprising the following steps:

forming a bending beam structure (34) in the interior (18), said bending beam structure having at least one anchoring region (36) which is fixed to the frame structure (14), the substrate surface (10a) and/or the at least one intermediate layer (12a, 12b) and having at least one self-supporting region (38) which is connected to the membrane inner side (16a) of the membrane (16) by means of at least one coupling structure (40) in such a way that the at least one self-supporting region (38) can be bent by means of the warpage of the membrane (16).

8. Manufacturing method according to claim 7, wherein at least one protruding stop structure (64) is configured on at least one surface of the bending beam structure (34) directed away from the membrane (16) from the bearing area (38).

9. Manufacturing method according to claim 7 or 8, wherein at least the bending beam structure (34) is formed by a first semiconductor layer and/or metal layer (46) covering the substrate surface (10a), the at least one intermediate layer (12a, 12b), a printed wiring layer (32) and/or at least one first sacrificial layer (48), wherein the membrane (16) and/or the at least one coupling structure (40) is formed by a second semiconductor layer and/or metal layer (50) covering the first semiconductor layer and/or metal layer (46) and/or at least one second sacrificial layer (52).

10. Manufacturing method according to claim 9, wherein at least one reference electrode (28) and/or at least one measuring electrode (22) is formed by the first semiconductor layer and/or metal layer (46) in addition to the bending beam structure (34), which is fixed on the frame structure (14), the substrate surface (10a) and/or the at least one intermediate layer (12a, 12b), and/or wherein at least one suspension structure (24) is formed by the second semiconductor layer and/or metal layer (50) in addition to the membrane (16) and/or at least one coupling structure (40), by means of which the at least one measuring electrode (22) is suspended on the membrane inner side (16 a).

Technical Field

The invention relates to a micromechanical component for a sensor device or a microphone device. The invention also relates to a method for producing a micromechanical component for a sensor or microphone device.

Background

Fig. 1 shows a schematic illustration of a conventional pressure sensor device, which is known to the applicant as internal prior art.

The pressure sensor device schematically shown in fig. 1 comprises: a substrate 10 having a substrate surface 10 a; a frame structure 14 arranged on at least one intermediate layer 12a and 12b at least partially covering the substrate surface 10 a; and a diaphragm 16. The membrane 16 spans an inner volume 18 at least partially surrounded by the frame structure 14 such that a membrane inner side 16a of the membrane 16 adjoins the inner volume 18. Furthermore, the membrane 16 can be acted upon by an internal pressure p present on its membrane inner side 16a₁With an external pressure p existing on a diaphragm outer side 16b oriented away from the diaphragm inner side 16a₂Is warped by the pressure difference therebetweenAs schematically shown in fig. 1, due to the internal pressure p₁With external pressure p₂The pressure F acting on the membrane due to the pressure difference between the two can deform the membrane to such an extent that cracks 20 occur in the membrane 16, in particular in the clamping region (einsunkensbereich) 16c of the membrane 16.

Illustratively, the conventional pressure sensor device of FIG. 1 further includes a measurement electrode 22 suspended from the diaphragm inner side 16a of the diaphragm 16 by at least one suspension structure 24. Between the measuring electrode 22 and the substrate surface 10a, a measuring counter electrode 26 is fixed on at least one intermediate layer 12a and 12 b. Likewise, the conventional pressure sensor device of fig. 1 further comprises at least one fixed reference electrode 28, which is at a predefined distance from at least one reference counter electrode 30 fixed on the at least one intermediate layer 12a and 12b, wherein the at least one reference electrode 28 and the at least one reference counter electrode 30 are arranged at least partially circumferentially around the measurement electrode 22 and the measurement counter electrode 26.

Disclosure of Invention

The invention relates to a micromechanical component for a sensor or microphone device, comprising:

a substrate having a substrate surface;

a frame structure arranged on the substrate surface and/or on at least one intermediate layer at least partially covering the substrate surface; and

a diaphragm spanning an interior volume at least partially surrounded by the frame structure such that a diaphragm inner side of the diaphragm abuts the interior volume;

wherein the inner volume is sealed in a gas-tight manner in such a way that the membrane can be warped by means of a pressure difference between an internal pressure present on its membrane inner side and an external pressure present on a membrane outer side of the membrane oriented away from the membrane inner side,

it is characterized in that

A bending beam structure arranged in the interior space, having at least one anchoring region which is fastened to the frame structure, the substrate surface and/or the at least one intermediate layer and having at least one self-supporting region which is connected to the membrane inner side of the membrane by means of at least one coupling structure in such a way that the at least one self-supporting region can be bent by means of a warpage of the membrane.

The invention also provides a method for producing a micromechanical component for a sensor or microphone device, comprising the following steps:

forming a frame structure on a substrate surface of the substrate and/or on at least one intermediate layer at least partially covering the substrate surface; and

spanning an interior volume at least partially surrounded by the frame structure by means of the membrane such that a membrane inner side of the membrane adjoins the interior volume;

wherein the inner volume is sealed in a gas-tight manner in such a way that the membrane can be warped by means of a pressure difference between an internal pressure present on its membrane inner side and an external pressure present on a membrane outer side of the membrane oriented away from the membrane inner side,

the method is characterized by comprising the following steps:

a bending beam structure is formed in the interior, which bending beam structure has at least one anchoring region fixed to the frame structure, the substrate surface and/or the at least one intermediate layer and has at least one self-supporting region, which is connected to the membrane inner side of the membrane by means of at least one coupling structure in such a way that the at least one self-supporting region can be bent by means of the warping of the membrane.

THE ADVANTAGES OF THE PRESENT INVENTION

The invention relates to a micromechanical component in which, due to the design of the bending beam structure (Biegebalkenstruktur) according to the invention, the formation of cracks on the membrane thereof is reliably prevented. The bending beam structure according to the invention of such a micromechanical component can be designed such that, even in the event of an overload, crack formation is reliably prevented even in the clamping region of the respective membrane when a relatively high pressure acts on the membrane. The risk of a conventional failure of the micromechanical component or of the sensor or microphone arrangement constructed therewith due to a crack in its membrane is thus eliminated.

In an advantageous embodiment of the micromechanical component, the at least one coupling structure is formed entirely from at least one electrically conductive material. In this case, the at least one coupling structure may be formed using generally the same material (e.g., silicon) as that used to form the diaphragm. The construction of the at least one coupling structure is therefore relatively simple and requires only a relatively low effort.

Alternatively, the at least one coupling structure may be formed at least partially of at least one electrically insulating material. In this case, the electrical potential applied to at least one self-supporting (freitraged) region of the respective bending beam structure may be different from the electrical potential applied to the adjacent membrane.

As an advantageous embodiment of the micromechanical component, the at least one self-supporting region of the bending beam structure can span at least one counter electrode arranged on the substrate surface and/or on the at least one intermediate layer, wherein the at least one counter electrode is electrically insulated from the at least one self-supporting region of the bending beam structure, and the measurement signal can be tapped between the at least one self-supporting region of the bending beam structure and the at least one counter electrode. As explained in more detail below, the measurement signal can be used as a "warning signal" in this case in respect of the relatively high pressure acting on the membrane.

Alternatively or additionally, at least one protruding stop structure can also be formed on a surface of at least one self-supporting region of the bending beam structure that is oriented away from the membrane. The maximum warpage of the membrane can be mechanically limited by means of at least one stop structure.

In a further advantageous embodiment of the micromechanical component, the bending beam structure and the at least one reference electrode and/or the at least one measuring electrode, which is/are fastened to the frame structure, the substrate surface and/or the at least one intermediate layer, are formed by the first semiconductor layer and/or the metal layer; and/or the membrane, the at least one coupling structure and/or the at least one suspension structure, by means of which the at least one measuring electrode is suspended on the inner side of the membrane, are formed by the second semiconductor layer and/or the metal layer. The micromechanical component described here can therefore be produced in a relatively simple and cost-effective manner despite being equipped with at least one reference electrode and/or at least one measuring electrode.

Furthermore, the above-described advantages are also achieved by the implementation of a corresponding production method for a micromechanical component of a sensor device or a microphone device, which can be extended according to the above-described embodiments of the micromechanical component.

Drawings

Further features and advantages of the invention are explained below on the basis of the drawings. The figures show:

FIG. 1 shows a schematic diagram of a conventional pressure sensor apparatus;

fig. 2 shows a partial schematic view of a first embodiment of a micromechanical component;

fig. 3a and 3b show a partial schematic view of a second embodiment of a micromechanical component;

fig. 4 shows a partial schematic view of a third embodiment of a micromechanical component;

fig. 5 shows a partial schematic view of a fourth embodiment of a micromechanical component;

fig. 6 shows a schematic partial view of a fifth embodiment of a micromechanical component;

fig. 7 shows a schematic partial illustration of a sixth embodiment of a micromechanical component;

fig. 8 shows a schematic partial view of a seventh embodiment of a micromechanical component;

fig. 9 shows a schematic partial view of an eighth embodiment of a micromechanical component; and

fig. 10 to 12 show a partial schematic view of a ninth, tenth and eleventh embodiment of a micromechanical component.

Detailed Description

Fig. 2 shows a schematic partial view of a first embodiment of a micromechanical component.

The micromechanical component illustrated in part schematically in fig. 2 has a substrate 10 with a substrate surface 10a, which is, for example, a semiconductor substrate, in particular a silicon substrate. The substrate surface 10a is at least partially covered by at least one intermediate layer 12a and 12 b. The at least one intermediate layer 12a and 12b may be, for example, at least one insulating layer 12a and 12b, such as, in particular, a silicon dioxide layer 12a and/or a silicon-rich silicon nitride layer 12 b. Alternatively, the conductor track layer 32 may be deposited on the substrate surface 10a and/or on the at least one intermediate/insulating layer 12a and 12b, wherein the electrical contacts 32a can each be formed/configured, for example, by direct contact between the substrate surface 10a and the conductor track layer 32. The conductor track layer 32 may be, for example, a silicon layer.

The micromechanical component also has a frame structure 14, which is arranged on the substrate surface 10a and/or on the at least one intermediate layer 12a and 12 b. The membrane 16 thus spansAn interior space 18 at least partially surrounded by the frame structure 14 such that the diaphragm inner side 16a of the diaphragm 16 abuts the interior volume 18. Furthermore, the interior volume 18 is sealed in a gas-tight manner in such a way that the membrane 16 is acted upon by the internal pressure p present on its membrane inner side 16a₁With an external pressure p existing on a diaphragm outer side 16b oriented away from the diaphragm inner side 16a₂The pressure difference therebetween can warp/buckle. However, FIG. 2 shows the internal pressure p₁With external pressure p₂In which case the pressure is equal.

In addition, the micromechanical component of fig. 2 has a bending beam structure 34 arranged in the interior 18, which has at least one anchoring region 36 fixed to the frame structure 14, the substrate surface 10a and/or the at least one intermediate layer 12a and 12b and has at least one self-supporting region 38. The at least one self-supporting region 38 is connected to the diaphragm inner side 16a of the diaphragm 16 by at least one coupling structure 40 in each case in such a way that the at least one self-supporting region 38 can be bent/curved by means of the warpage of the diaphragm 16. As is shown graphically on the basis of the following exemplary embodiments, the bending beam structure 34 acts as a structural measure for reducing the internal pressure p₁With external pressure p₂In the presence of a pressure difference between them, mechanical stresses occur in the membrane 16, in particular in the clamping region 16c of the membrane 16.

As an alternative embodiment, the micromechanical component of fig. 2 also has a counter electrode 42, which is arranged on the substrate surface 10a and/or on the at least one intermediate layer 12a and 12b and spans the at least one self-supporting region 38 of the bending beam structure 34. The counter electrode 42 is electrically insulated from at least one self-bearing region 38 of the flexure beam structure 34. Furthermore, a measurement signal, for example a voltage signal, can be intercepted between at least one self-supporting region 38 of the bending beam structure 34 and the counter electrode 42.

In the case of a significant warpage of the membrane 16, the spacing d between the at least one self-supporting region 38 of the bending beam structure 34 and the counter electrode 42 changes, which can be recognized on the basis of a change in the measurement signal (for example the intercepted voltage). By means of the arrangement of the at least one coupling structure 40, by means of which the at least one self-supporting region 38 of the bending beam structure 34 is connected to the diaphragm inner side 16a of the diaphragm 16, it is possible to determine from which degree of warpage of the diaphragm 16a significant change in the distance d and thus in the measurement signal occurs. Thus, by analytically processing the measurement signal, it can be determined whether a critical warpage of the membrane 16 occurs. If necessary, corresponding warning signals can then be output to the user of the micromechanical component and/or to the control electronics which operate the micromechanical component.

As can also be seen in fig. 2, the micromechanical component also has at least one measuring electrode 22, which is suspended on the diaphragm inner side 16a of the diaphragm 16 by at least one suspension structure 24. In particular, between the at least one measuring electrode 22 and the substrate 10, in each case one measuring counter electrode 26 can be attached to the substrate surface 10a and/or to the at least one intermediate layer 12a and 12 b. By means of the interaction of the at least one measuring electrode 22 and the at least one measuring counter electrode 26, the internal pressure p can be detected₁With external pressure p₂Or may detect sound waves impinging on the diaphragm outer side 16 b. The micromechanical component described here can therefore be used advantageously in a sensor device or a microphone device.

Preferably, the minimum spacing of the at least one coupling structure 40 to the clamping area 16c of the diaphragm 16 is less than the minimum spacing of the at least one suspension structure 24 to the clamping area 16 c.

Here, for the at least one measuring electrode 22, preferably "centrally suspended" on the diaphragm 16, while the bending beam structure 34 is preferably arranged close to the clamping area 16c of the diaphragm 16 or directly on the clamping area 16c of the diaphragm 16. In particular in the event of an overload, high bending forces occur at the clamping region 16c of the membrane 16, so that it is advantageous to absorb the deformation forces/deformation energy which act in this case on the clamping region 16c by means of the at least one coupling structure 40 and the bending beam structure 34. Here, the geometry and shape of the bending beam structure 34 and the spacing of the at least one coupling structure 40 to the clamping area 16c of the diaphragm 16 determine the following forces: this force resists the deformation force/energy on the diaphragm 16 at the location of the at least one coupling structure 40. Furthermore, by at leastA measuring electrode 22 is suspended "centrally" on the diaphragm 16 and can detect the internal pressure p₁With external pressure p₂Or when detecting sound waves impinging on the diaphragm outer side 16 b.

Alternatively, the micromechanical component of fig. 2 may be configured as a mirror symmetry with respect to the plane of symmetry 44. Alternatively, however, it is also possible to arrange a reference electrode 28 with a corresponding reference counter electrode 30 on the side of the measuring electrode 22 oriented away from the bending beam structure 34, as these are shown, for example, in fig. 1.

Even in mass production, the micromechanical component illustrated in fig. 2 in part can be produced in a simple manner and with good repetition accuracy by means of the following production method:

to carry out the production method, a first semiconductor layer and/or metal layer 46 is deposited on the substrate surface 10a, the at least one intermediate layer 12a and 12b, the conductor track layer 32 and/or the at least one first sacrificial layer 48. The first semiconductor layer and/or the metal layer 46 may be, for example, a silicon layer. The at least one first sacrificial layer 48 may be, in particular, a silicon dioxide layer. Furthermore, a second semiconductor and/or metal layer 50 is deposited on the first semiconductor and/or metal layer 46 and/or the at least one second sacrificial layer 52. The second semiconductor layer and/or the metal layer 50 may also be a silicon/polysilicon layer. The at least one second sacrificial layer 52 may be, for example, a silicon dioxide layer.

Preferably, the frame structure 14 is formed by at least a part of the conductor track layer 32, by at least a part of the first semiconductor layer and/or metal layer 46 and by at least a part of the second semiconductor layer and/or metal layer 50 in such a way that the frame structure 14 formed on the substrate surface 10a and/or the at least one intermediate layer 12a and 12b at least partially surrounds the (subsequent) interior volume 18. The diaphragm 16 spans the interior volume 18 in such a way that a diaphragm inner side 16a of the diaphragm 16 adjoins the interior volume 18, wherein the diaphragm 16 is formed from the second semiconductor layer and/or the metal layer 50. The bending beam structure 34 is formed/structured from the first semiconductor layer and/or the metal layer 46 in such a way that the bending beam structure 34 is arranged in the interior space 18 and is formed with at least one anchoring region 36 fastened to the frame structure 14, the substrate surface 10a and/or the at least one intermediate layer 12a and 12b and with at least one self-supporting region 38. The at least one coupling structure 40 can also be formed from a second semiconductor layer and/or a metal layer 50, by means of which at least one self-supporting region 38 is connected to the diaphragm inner side 16a of the diaphragm 16 in such a way that the at least one self-supporting region 38 can be bent by means of the warpage of the diaphragm 16.

As can be seen in fig. 1 and 2, in addition to the bending beam structure 34, at least one reference electrode 28 and/or at least one measuring electrode 22, which is fastened to the frame structure 14, the substrate surface 10a and/or the at least one intermediate layer 12a and 12b, can be formed/structured from a first semiconductor layer and/or a metal layer 46. In addition to the membrane 16 and possibly the at least one coupling structure 40, the at least one suspension structure 24, by means of which the at least one measuring electrode 22 is suspended on the membrane inner side 16a, may also be formed by a second semiconductor layer and/or a metal layer 50. Furthermore, the counter electrode 42, the at least one measuring counter electrode 26 and/or the at least one reference counter electrode 30 may be formed/structured from the printed wiring layer 32.

After at least partial removal/etching of the sacrificial layers 48 and 52 (preferably at a desired internal pressure p)₁Below) the internal volume 18 is sealed in a gastight manner, for example in the manner: an insulating layer 54 is deposited on at least a portion of the outer surface of the second semiconductor layer and/or the metal layer 50 surrounding the at least one etched opening. At least one partial outer surface is preferably understood to be the surface of the second semiconductor layer and/or of the metal layer 50 which is directly adjacent to the respective etched opening. In this way, it is ensured that the membrane 16 is acted upon by the internal pressure p present on its membrane inner side 16a₁With (currently) an external pressure p existing on the outer side 16b of the diaphragm₂The pressure difference therebetween can warp/buckle. Optionally, metallization 56 (e.g., aluminum copper) and/or optional contact metallization 56b (e.g., TiSi) may be utilized₂Ti) and/or an optional diffusion barrier (e.g. TiN) to configure at least one electrical contact56 a. As a further optional method step, a passivation 58, for example silicon nitride (Si), can also be deposited on the metallization 56 and the insulating layer 54₃N₄)。

Fig. 3a and 3b show a schematic partial view of a second embodiment of a micromechanical component.

In addition to the above-described embodiments, the micromechanical component illustrated in a partially schematic manner in fig. 3a and 3b also has at least one reference electrode 28, which is attached to the frame structure 14, the substrate surface 10a and/or the at least one intermediate layer 12a and 12 b. At least one reference electrode 28 spans each corresponding reference counter electrode 30. The reference capacitance measurement can be carried out with the aid of the at least one reference electrode 28 and its at least one reference counter electrode 30 in order to be able to "filter out" or correct the change in spacing/change in measurement signal between the at least one measurement electrode 22 and its at least one measurement counter electrode 26, which can be attributed to a bending of the substrate 10. As can be seen in fig. 3a and 3b, the at least one reference electrode 28 may be formed/structured from the first semiconductor layer and/or the metal layer 46, and the at least one reference counter electrode 30 thereof may be formed/structured from the printed wiring layer 32. In particular, the curved beam structure 34, its counter electrode 42, the adjacent reference electrode 28 and the adjacent reference counter electrode 30 can be formed by the "conventional" reference electrode 28 of fig. 1 and its corresponding reference counter electrode 30 by structuring of one consecutive intermediate gap 60 each.

In the illustration of fig. 3a, the external pressure p₂Equal to the internal pressure p in the internal volume 18₁. In contrast, in the illustration of fig. 3b, the external pressure p₂Above internal pressure p₁. It can be seen that in this case, the buckling of the membrane 16 triggers a bending of at least one self-supporting region 38 of the bending beam structure 34, whereby the spacing d between the at least one self-supporting region 38 of the bending beam structure 34 and the corresponding counter electrode 42 changes and thereby absorbs energy or generates a reaction force on the membrane 16, so that the membrane 16 buckles less strongly than in the prior art. Therefore, the mechanical stress occurring in the warped diaphragm 16 (especially in the clamping area 16c of the diaphragm 16) is reduced. Thus, by bendingThe beam structure 34 can reliably resist the generation of cracks in the diaphragm 16. Therefore, even in the case where the diaphragm 16 is configured to be relatively thin, there is no fear of crack formation in the diaphragm 16. The risk of failure of the micromechanical component due to cracks in its membrane 16 is therefore significantly reduced compared to the prior art.

It is further noted that the amount of reaction force or energy absorbed by the bending beam structure 34 can be determined by the length of the at least one self-supporting region 38 of the bending beam structure 34 oriented parallel to the substrate surface 10a, the width of the at least one self-supporting region 38 of the bending beam structure 34 oriented parallel to the substrate surface 10a, the height of the at least one self-supporting region 38 of the bending beam structure 34 oriented perpendicular to the substrate surface 10a, and the shape of the at least one self-supporting region 38 of the bending beam structure 34. The reaction force exerted on the diaphragm 16 by the at least one self-bearing region 38 of the flexure beam structure 34 at the location of the at least one coupling structure 40 may also be "tuned" by the location of the at least one coupling structure 40. Due to the geometry and shape of the at least one self-supporting region 38 of the bending beam structure 34 and the distance of the at least one coupling structure 40 from the clamping region 16c of the membrane 16, the membrane 16 can be locally more or less resistant to bending (due to the external pressure p present)₂). Thus, the reaction force or the amount of energy absorbed by means of the bending beam structure 34 can be flexibly adjusted. By using a plurality of coupling structures 40 on each self-supporting region 38, it is also possible to "model" the resulting membrane warpage/membrane bending in a better/more specific manner when loading the membrane outer side 16b with pressure.

With regard to further characteristics and features of the micromechanical component of fig. 3a and 3b and advantages thereof, reference is made to the embodiment of fig. 2.

Fig. 4 shows a schematic partial view of a third embodiment of a micromechanical component.

In the embodiment of fig. 4, the self-supporting region 38 of the bending beam structure 34 extends over a conductive structure 62 arranged on the substrate surface 10a and/or on the at least one intermediate layer 12a and 12b, which conductive structure is located in contact with the self-supporting region 38 of the bending beam structure 34 (toAnd possibly the membrane 16) at the same potential. By electrically connecting the conductive structure 62 to the flexure beam structure 34, variable reference and stray capacitances are avoided when the diaphragm 16 is loaded with pressureFor example, extending from the bearing region 38 away from the corresponding anchoring region 36 of its bending beam structure 34 and away from the clamping region 16c of the membrane 16.

With regard to further characteristics and features of the micromechanical component of fig. 4 and advantages thereof, reference is made to the above-described embodiments.

Fig. 5 shows a schematic partial view of a fourth embodiment of a micromechanical component.

In the micromechanical component of fig. 5, the self-supporting region 38 of its bending beam structure 34 extends away from the corresponding anchoring region 36 towards the clamping region 16c of the membrane. The mechanical force/energy coupling in via its coupling structure 40 into the bending beam structure 34 therefore takes place in the vicinity of the clamping region 16c of the diaphragm 16.

With regard to further characteristics and features of the micromechanical component of fig. 5 and advantages thereof, reference is made to the above-described embodiments.

Fig. 6 shows a schematic partial view of a fifth embodiment of a micromechanical component.

In the micromechanical component of fig. 6, its bending beam structure 34 has two anchoring regions 36, each of which has a self-supporting region 38, which is connected to the diaphragm inner side 16a via at least one coupling structure 40. It can be seen that this configuration of the bent beam structure 34 can be constructed by the "conventional" reference electrode 28 of fig. 1 with a consecutive intermediate gap 60. In such a bent beam structure 34, the following possibilities exist: at least two different positions of the diaphragm 16, in each case one reaction force is exerted on the diaphragm inner side 16a of the diaphragm 16. Furthermore, by designing the two self-supporting regions 38, in particular their (possibly different) length, their (possibly different) width, their (possibly different) height and their (possibly different) shape, the respective reaction forces can be influenced in order to determine the bending of the diaphragm 16 when the diaphragm outer side 16b is loaded with a pressure corresponding to the desired target bending/target deformation.

With regard to further characteristics and features of the micromechanical component of fig. 6 and advantages thereof, reference is made to the above-described embodiments.

Fig. 7 shows a schematic partial view of a sixth embodiment of a micromechanical component.

As a further development of the above-described embodiment, the micromechanical component of fig. 7 also has at least one protruding stop structure 64 on at least one surface of the bending beam structure 34 oriented away from the membrane 16 from the carrier region 38. The maximum deflection of the at least one self-supporting region 38 in the direction of the substrate 10 can be limited by means of the at least one stop structure 64. Accordingly, the maximum warpage of the membrane 16 can also be limited by means of the at least one stop 64. Preferably, one stop structure 64 and one coupling structure 40 each extend along a common axis 66. This can also be rewritten in that the at least one stop structure 64 is located in each case within the "longitudinal extension axis" of the at least one coupling structure 40. This has the following advantages: when the at least one stop structure 64 is in contact with the contact structure, the substrate surface 10a and/or the at least one intermediate layer 12a and 12b, the force coupling input into the membrane 16 is further transmitted directly via the at least one coupling structure 40, the at least one self-supporting region 38 and the at least one stop structure 64 into the substrate 10. In the embodiment of fig. 7, at least one stop structure 64 contacts, for example, at least one intermediate layer 12a and 12b when the membrane 16 is strongly warped.

Alternatively, if desired, it is also possible to construct at least one "spring stop" of the bending beam structure 34 from the bearing region 38 in such a way that: the at least one stop structure 64 is positioned offset relative to the at least one coupling structure 40, or the at least one stop structure is positioned outside of the "longitudinal axis of extension" of the at least one coupling structure 40.

With regard to further characteristics and features of the micromechanical component of fig. 7 and advantages thereof, reference is made to the above-described embodiments.

Fig. 8 shows a schematic partial view of a seventh embodiment of a micromechanical component.

In addition to the above-described embodiment, the micromechanical component of fig. 8 also has a contact structure 68, which contacts the at least one stop structure 64 when the membrane 16 is strongly warped. The contact structure 68 may be formed/structured by the printed conductor layer 32, however, is preferably constructed so as to be electrically insulated from its immediate surroundings. Alternatively, the contact structure 68 may have the same electrical potential as the at least one stop structure and/or the at least one self-bearing region 38 of the bending beam structure 34.

With regard to further characteristics and features of the micromechanical component of fig. 8 and advantages thereof, reference is made to the above-described embodiments.

Fig. 9 shows a schematic partial view of an eighth embodiment of a micromechanical component.

In the micromechanical component according to fig. 9, the formation of at least one protruding stop structure 64 on at least one self-supporting region 38 of its bending beam structure 34 is omitted. However, the micromechanical component of fig. 9 has the contact structure 68 already described above, which is impinged upon by at least one end of at least one self-supporting region 38 of its bending beam structure 34 in the event of a strong warpage of the membrane 16. Even if it is dispensed with to form at least one protruding stop structure 64 on at least one self-supporting region 38, the maximum warpage of the membrane 16 can be determined by means of the contact structure 68.

With regard to further characteristics and features of the micromechanical component of fig. 9 and advantages thereof, reference is made to the above-described embodiments.

Alternatively, in a variant of the embodiment of fig. 8 and 9, the maximum warpage of the membrane 16 can also be determined using the conductive structure 62 (instead of the contact structure 68).

Fig. 10 to 12 show a partial schematic view of a ninth, tenth and eleventh embodiment of a micromechanical component.

The micromechanical component of fig. 10 to 12 differs from the embodiment of fig. 6 only in that the geometry of the region of the frame structure 14 extending from the bending beam structure 34 to the membrane 16, the geometry of the region of the frame structure 14 extending from the bending beam structure 34 to the printed conductor layer 32 and/or the geometry of a further anchoring region 36 of the bending beam structure 34 are/is enlarged at least in part. In this way, it is also possible to determine the amount of energy absorbed by means of the bending beam structure 34 andunder the application of external pressure p₂Which affects the bending/deformation of the diaphragm 16.

With regard to further characteristics and features of the micromechanical component according to fig. 10 to 12 and advantages thereof, reference is made to the above-described embodiments.

In all of the micromechanical components described above, the amount of energy absorbed by means of its bending beam structure 34 can be determined by means of a relatively free choice of the length of the at least one self-supporting region 38, the width of the at least one self-supporting region 38, the height of the at least one self-supporting region 38, the shape of the at least one self-supporting region 38 and the position of its at least one coupling structure 40. The at least one coupling structure 40 may be formed entirely of at least one conductive material, for example, in the manner of: the at least one coupling structure 40 is completely formed/structured by the second semiconductor layer and/or the metal layer 50. Alternatively, the at least one coupling structure 40 may be formed at least partially of at least one electrically insulating material, such as in particular silicon-rich silicon nitride. In the case where the at least one coupling structure 40 is constructed at least partially of silicon-rich silicon nitride, the etching material (e.g., HF or BOE) typically used to etch the sacrificial layers 48 and 52 does not attack/hardly attacks the silicon-rich silicon nitride.

All micromechanical components described above can be produced by means of the production method described, wherein, as an embodiment, it is also possible to form at least one projecting stop structure 64 on at least one surface of the bending beam structure 34 oriented away from the membrane 16 from the bearing region 38. The frame structure 14, the at least one suspension structure 24 of the at least one measuring electrode 22 and/or the anchoring region 36 may be configured to be at least partially electrically insulated. Silicon-rich silicon nitride may be used, for example, as an electrically insulating material to form the frame structure 14 and/or the anchor region 36. In addition, the semiconductor layer can be doped in a targeted manner in order to improve the conductivity.