阅读说明：本技术 用于高频天线的断热器 (Heat breaker for high-frequency antenna ) 是由 蔡泰正 哈恩·阮 菲利普·艾伦·克劳斯 于 2020-04-01 设计创作，主要内容包括：本文所公开的实施方式包括高频发射模块。在一个实施方式中,高频发射模块包含固态高频功率源、用于从功率源传播高频电磁辐射的施加器、及耦合于功率源及施加器之间的断热器。在一个实施方式中,断热器包含基板、在基板上的迹线及接地平面。(Embodiments disclosed herein include a high frequency transmit module. In one embodiment, a high frequency transmission module includes a solid state high frequency power source, an applicator for propagating high frequency electromagnetic radiation from the power source, and a thermal break coupled between the power source and the applicator. In one embodiment, a thermal break includes a substrate, a trace on the substrate, and a ground plane.)

1. A high frequency transmit module comprising:

a solid state high frequency power source;

an applicator for propagating high frequency electromagnetic radiation from the power source; and

a thermal break coupled between the power source and the applicator, wherein the thermal break comprises:

a substrate;

traces on the substrate; and

a ground plane.

2. The high frequency transmit module of claim 1, wherein the thermal break further comprises a thermal solution.

3. The high frequency transmit module of claim 2, wherein the thermal solution includes a thermal block including channels for flowing a liquid or gaseous coolant.

4. The high frequency transmit module of claim 2, wherein the thermal solution includes one or more fins.

5. The high frequency transmit module of claim 2, wherein the thermal solution includes a thermoelectric cooler.

6. The high frequency transmit module of claim 2, wherein the thermal solution is directly attached to the ground plane.

7. The high frequency transmission module of claim 1, wherein the trace extends from a first end of the substrate to a second end of the substrate.

8. The high frequency transmit module of claim 7, wherein a portion of the trace over the first end of the substrate is coupled to the power source by a coaxial cable.

9. The high frequency transmit module of claim 7, wherein the trace includes one or more posts extending outwardly from a major length of the trace.

10. A processing tool, comprising:

a processing chamber; and

a modular high frequency radiation source comprising:

a plurality of high frequency transmission modules, wherein each high frequency transmission module comprises:

an oscillator module;

an amplifier module coupled to the oscillator module;

a thermal break coupled to the amplifier module; and

an applicator, wherein the applicator is coupled to the amplifier module through the thermal break, and wherein the applicator is positioned in the processing chamber opposite a chuck on which one or more substrates are processed.

11. The processing tool of claim 10, wherein the thermal break comprises:

a substrate;

traces across the substrate;

a ground plane; and

a thermal solution.

12. The processing tool of claim 11, wherein the thermal solution comprises a thermal block comprising channels for flowing a liquid or gaseous coolant.

13. The processing tool of claim 11, wherein the thermal solution comprises one or more fins.

14. The processing tool of claim 11, wherein the thermal solution comprises a thermoelectric cooler.

15. The processing tool of claim 14, wherein the thermal solution is directly attached to the ground plane.

Technical Field

Embodiments relate to the field of semiconductor manufacturing, and more particularly, to thermal solutions for high frequency plasma sources.

Background

The electronic components of a high frequency plasma system are sensitive to heat. For example, high frequency plasma sources and cables (e.g., coaxial cables or the like) may be damaged or degraded by heat generated by the system. In particular, heat generated by the plasma or heat from the heated chamber may be transferred from the antenna back to the electronic components driving the plasma. In some cases, the heat generated by the system is sufficient to melt the connection between the high frequency power source and the antenna.

Disclosure of Invention

Embodiments disclosed herein include a high frequency transmit module. In one embodiment, a high frequency transmission module includes a solid state high frequency power source, an applicator for propagating high frequency electromagnetic radiation from the power source, and a thermal break coupled between the power source and the applicator. In one embodiment, a thermal break includes a substrate, a trace on the substrate, and a ground plane.

Embodiments may also include a processing tool. In one embodiment, a processing tool includes a process chamber and a modular high frequency radiation source. In one embodiment, the modular high frequency transmission source comprises a plurality of high frequency transmission modules. In one embodiment, each high frequency transmit module includes an oscillator module, an amplifier module coupled to the oscillator module, a heat breaker coupled to the amplifier module, and an applicator. In one embodiment, an applicator is coupled to the amplifier module by a thermal break and is positioned in the processing chamber opposite the chuck on which one or more substrates are processed.

Embodiments may also include a thermal break for the high frequency plasma source. In one embodiment, a thermal break comprises a substrate having a first surface and a second surface opposite the first surface, wherein the substrate comprises one or more dielectric layers. In one embodiment, the thermal break further comprises a connector coupled to the substrate, wherein the connector is configured to receive a coaxial cable, and a conductive trace that interfaces with the connector, and wherein the conductive trace extends from the connector toward an edge of the substrate opposite the connector. In one embodiment, the thermal break further comprises a ground plane embedded in the substrate, wherein the ground plane is not electrically coupled to the conductive trace, and a thermal solution thermally coupled to the substrate.

Drawings

Fig. 1 is a cross-sectional view of a high frequency transmit module with a thermal break between a power source and an applicator according to one embodiment.

Fig. 2A is a perspective view of an thermal break having a fluid channel through a thermal block to provide heat dissipation, according to one embodiment.

Fig. 2B is a perspective view of a heat interrupter having a plurality of fins for dissipating heat according to one embodiment.

Fig. 2C is a perspective view of a thermal break having a thermoelectric cooling block to provide heat dissipation, according to one embodiment.

Fig. 3A is a plan view of a conductive trace extending across a thermal break having a uniform width according to one embodiment.

Fig. 3B is a plan view of a thermal break having an electrically conductive trace that includes a plurality of posts (stubs) extending away from a major length of the trace, according to one embodiment.

Fig. 3C is a plan view of a thermal break including a trace and a plurality of posts selectively attached to the trace by one or more mechanical switches, according to one embodiment.

Fig. 4 is a cross-sectional view of a processing tool containing a modular high frequency transmission source having a plurality of high frequency transmission modules, each including a thermal break, according to one embodiment.

Fig. 5 is a block diagram of a modular high frequency transmit module according to one embodiment.

Fig. 6A is a plan view of an array of applicators that may be used to couple high frequency radiation to a process chamber according to one embodiment.

Fig. 6B is a plan view of an array of applicators that can be used to couple high frequency radiation to a process chamber according to additional embodiments.

Fig. 6C is a plan view of an array of applicators and a plurality of sensors for detecting a condition of the radiation field and/or plasma according to one embodiment.

FIG. 6D is a plan view of an array of applicators formed in two zones of a multi-zone processing tool, according to one embodiment.

FIG. 7 illustrates a block diagram of an example computer system that may be used in conjunction with a high frequency plasma tool, according to one embodiment.

Detailed Description

The systems and methods described herein include a thermal solution for a high frequency plasma source. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the embodiments. It will be apparent to one skilled in the art that embodiments may be practiced without these specific details. In other instances, well-known aspects have not been described in detail so as not to unnecessarily obscure the embodiments. Further, it should be understood that the various embodiments shown in the figures are illustrative and are not necessarily drawn to scale.

As described above, plasma processing tools utilizing high frequency plasma sources are susceptible to degradation or damage due to heat transfer from the plasma and/or heat from the chamber to the power source and the cables between the power source and the antenna. In some cases, it has even been observed that thermal loading causes the cable to melt. Further, embodiments disclosed herein include thermal breaks that thermally isolate the solid-state electrons of the cables and power sources from the thermal load supplied by the plasma and/or chamber.

In some embodiments, the thermal break is positioned between the applicator (e.g., antenna) and the solid state electronics of the processing tool. For example, the solid state electronics may be electrically coupled to the thermal break through a coaxial cable, and the thermal break may be directly coupled to the antenna. In addition to providing thermal isolation between components of the processing tool, the thermal break also provides an electrical coupling from the coaxial cable to the antenna. In some embodiments, the thermal break may also act as an impedance matching element to allow efficient power delivery to the plasma. Thus, impedance matching and thermal regulation may be achieved in a single component (i.e., a thermal break). This reduces complexity and provides a compact construction.

Referring now to fig. 1, a cross-sectional view of a high frequency transmit module 103 is shown, according to one embodiment. In one embodiment, the high frequency transmission module 103 may include a solid state power source 105, a thermal break 150, and an applicator 142.

Solid state power source 105 may include a number of subcomponents such as oscillators, amplifiers, and other circuit blocks. A more detailed description of the solid state power source 105 is provided below with respect to fig. 5. In one embodiment, power source 105 provides high frequency electromagnetic radiation to applicator 142. As used herein, "high frequency" electromagnetic radiation includes radio frequency radiation, ultrahigh frequency radiation, and microwave apparel. "high frequency" may refer to frequencies between 0.1MHz and 300 GHz.

In one embodiment, the applicator 142 may include a dielectric body 144, the dielectric body 144 having a cavity in which the antenna 143 is disposed. For example, the antenna 143 may include a conductive wire (e.g., a monopole) extending into the dielectric body 144. In some embodiments, the antenna 143 is in direct contact with the dielectric body 144. In other embodiments, the cavity is larger than the antenna 143, and the antenna 143 is spaced apart from the surface of the dielectric body 144.

In one embodiment, the applicator 142 may be electrically coupled to the thermal break 150. The thermal break 150 may include a substrate 152 and conductive traces 151. In one embodiment, the substrate 152 may be a Printed Circuit Board (PCB) or the like. That is, the substrate 152 may include one or more dielectric layers. In the illustrated embodiment, the traces 151 are shown 2 as being located above the substrate 152. In a specific embodiment, the conductive traces 151 may be micro strips (microsstrips). However, it should be understood that in some embodiments the traces 151 may be embedded within the substrate 152. In particular embodiments, conductive trace 151 may be a strip line (stripe). That is, a ground plane (not shown in fig. 1) may be located above conductive trace 151, below conductive trace 151, or both above and below the conductive trace. In some embodiments, the ground plane is embedded in the substrate 152. In other embodiments, the ground plane may be located below or above the substrate 152. In another embodiment, the substrate 152 may comprise two different substrates (i.e., a first substrate and a second substrate) bonded together. In these embodiments, the conductive traces 151 can be located between the first substrate and the second substrate.

In one embodiment, the thermal break 150 may also include a thermal solution. The thermal solution may provide thermal conditioning for the high frequency emission module 103. Because the thermal break 150 is positioned between the applicator 142 and the solid state power source 105, thermal energy (e.g., from the plasma or heated chamber) dissipates before reaching the solid state power source 105.

Further, the cables and connectors (e.g., coaxial cable 155 and connector 153) between the thermal break 150 and the solid state power source 105 are protected from the thermal energy dissipated by the system. In one embodiment, coaxial cable 155 may be electrically coupled between solid state power source 105 and thermal break 150 using connector 153, as is known in the art. For example, a connector 153 may electrically couple the coaxial cable 155 to the conductive traces 151.

Referring now to fig. 2A-2C, a series of perspective views of a thermal break 250 with various thermal solutions according to various embodiments are shown. It should be appreciated that the thermal solutions shown in fig. 2A-2C are exemplary in nature, and that any suitable thermal solution may be used in conjunction with the thermal breaks, according to one embodiment. Further, while the various thermal solutions are shown as separate, it should be understood that multiple thermal solutions may be combined in order to provide even more efficient thermal energy dissipation.

Referring now to FIG. 2A, a perspective view of a heat breaker 250 with a fluid cooled thermal solution is shown, according to one embodiment. In one embodiment, the traces 251 are shown above the top surface of the substrate 252, and the ground plane 254 is below the substrate 252. In one embodiment, a thermal block 256 may be attached to the ground plane 254. The thermal block 256 may comprise a material having high thermal conductivity. For example, the thermal block 256 may comprise a metallic material.

In one embodiment, one or more channels 257 may be embedded in thermal block 256. The channels 256 may be adapted to flow a coolant through the thermal block 256 to remove heat from the system. As shown, a single Inlet (IN) and a single Outlet (OUT) are shown. However, it should be understood that the thermal block 256 may include any number of inlets and outlets.

In one embodiment, the coolant may comprise any suitable coolant fluid. For example, the coolant fluid may comprise a liquid (e.g., water-glycol mixture) or a gas (e.g., air, helium, etc.). The coolant fluid may be stored in a storage container. The storage container may be actively cooled to enhance heat extraction from the thermal break 250.

Referring now to FIG. 2B, a perspective view of a heat breaker 250 with an air-cooled thermal solution is shown, according to one embodiment. As shown, the thermal block 256 may also include a plurality of fins 256 that extend away from the thermal break 250. In one embodiment, the fins 258 increase the surface area of the heat block 256 to help remove heat by convection. For example, air (represented by arrows) may flow through the fins 258 to increase heat dissipation by the thermal break 250. In one embodiment, the air flow may be generated by a fan or the like. In other embodiments, there may be no active cooling and the fins 258 may dissipate heat energy to the ambient air.

Referring now to fig. 2C, a perspective view of a heat breaker 250 with thermoelectric cooling thermal solution is shown, according to one embodiment. In this embodiment, the thermal block may be replaced by an active cooling device, such as a thermoelectric cooler (TEC) 259. In this embodiment, a voltage applied to the TEC 259 may drive the removal of heat from the heat interrupter 250.

In addition to providing heat dissipation from the system, embodiments may also include a thermal break with dual functionality. In particular, the thermal break may also provide impedance matching for the system. By controlling the shape of the conductive traces, the impedance matching of the system can be modulated. Examples of traces 351 of various shapes that may be used to provide impedance matching are shown in fig. 3A-3C.

Referring now to FIG. 3A, a plan view of a thermal break 350 is shown, according to one embodiment. In one embodiment, the thermal break 350 may include a substrate 352 and traces 351 located on the substrate 352. The trace 351 may extend from a first edge 361 of the substrate 352 to a second edge 362 of the substrate 352. Although shown as extending all the way to the edge 361/362 of substrate 352, it should be understood that incorporating a connector (not shown in fig. 3A) may cause traces 351 to not extend all the way to the edge of substrate 352.

In one embodiment, the traces 351 may have a substantially uniform width W and extend linearly across the substrate 352. That is, the traces 351 may have a substantially rectangular shape. In other embodiments, the traces 351 may have a non-linear path across the substrate 352. For example, the trace 351 may include a serpentine pattern in order to increase the length of the trace 351. In other embodiments, the trace 351 may have a first width at the first edge 361 and a second width at the second edge 362. In one embodiment, the width W of the trace 351 may be substantially uniform (e.g., the first and second widths are substantially the same), or the width of the trace 351 may be a substantially non-uniform width W across the length of the trace (e.g., the width of the trace 351 near the first edge 361 may be different than the width of the trace 351 near the second edge 362). In one embodiment, the traces 351 may have a rectangular cross-section (i.e., the cross-section in the X-Z plane may be rectangular). In other embodiments, the traces 351 may have a non-rectangular cross-section in the X-Z plane. For example, the cross-section of trace 351 in the X-Z plane may be trapezoidal. In other embodiments, traces 351 may include a first trace and a second trace directly over the first trace. The first and second traces may have different widths. For example, the first trace may have a width greater than a width of the second trace, or the first trace may have a width less than a width of the second trace.

Referring now to fig. 3B, a plan view of a thermal break 350 with traces 351 containing one or more posts (stubs) 363 is shown, according to one embodiment. In one embodiment, the posts 363 may be conductive extensions extending from the body of the traces 351. In some embodiments, the posts 363 may be integral with the traces 351. That is, the traces 351 and posts 363 can be made simultaneously. In these embodiments, the pillars 363 may comprise substantially the same material as the traces 351 and have a thickness (in the Z-direction out of the plane of the paper of fig. 3B) that is substantially equal to the thickness of the traces 351. In other implementations, the posts 363 may be attached to the traces 351 after the traces are formed. For example, solder may be applied to the edges of the traces 351 in order to modify the impedance of the thermal break 350. In these implementations, the pillars 363 may comprise a different material than the traces 351, and may comprise a different thickness (in the Z-direction) than the traces 351. In one embodiment, one or more of the posts 363 may be open posts (i.e., not coupled to a ground plane). In additional embodiments, one or more of the posts 363 may be a shorting post (i.e., the posts 363 may be shorted to the ground plane).

Referring now to fig. 3C, a plan view of a thermal break 350 is shown, according to an additional embodiment. In one embodiment, the thermal break 350 may include a plurality of posts 367 selectively attachable to the trace 351 by switches 368. In one embodiment, when the switch is closed (e.g., switch 368)_C) When the post 367 is electrically coupled to the trace 351, and when the switch is open (e.g., switch 368)_O) When not, the post 367 is not electrically coupled to the trace 351. In one embodiment, the switch 368 may be manually operated. In other embodiments, the switch may be controlled by the computer system368 and is used to dynamically change the impedance as the process conditions change. In one embodiment, the switch 368 may be a mechanical switch. In other embodiments, the switch 368 may be a solid state switch.

Referring now to fig. 4, a cross-sectional schematic diagram of a processing system 400 having a modular high frequency radiation source 404 is shown, according to one embodiment. In one embodiment, the modular high frequency transmission source 404 may comprise a plurality of high frequency transmission modules 403. The high frequency transmission module 403 may be substantially similar to the high frequency transmission module 103 described above. For example, each of the high frequency transmit modules 403 may include a solid state power source 405, a thermal break 450, and an applicator 442. In one embodiment, high frequency electromagnetic radiation may be generated by the solid state power source 405 and transmitted along the cable 445 and trace 451 on the thermal break 450 to the applicator antenna 443. In one embodiment, the thermal break 450 may include one or more cooling solutions as described above.

In one embodiment, the modular high frequency radiation source 404 may inject high frequency electromagnetic radiation into the chamber 478 through the dielectric window 475. The high frequency electromagnetic radiation may include a plasma 490 in chamber 478. Plasma 490 may be used to process a substrate 474 positioned on a support 476, such as an electrostatic chuck (ESC) or the like.

Referring now to FIG. 5, a schematic diagram of a solid state power source 505 is shown, according to one embodiment. In one embodiment, the solid state power source 505 comprises an oscillator module 506. The oscillator module 506 may include a voltage control circuit 510 for providing an input voltage to a voltage controlled oscillator 520 to provide high frequency electromagnetic radiation at a desired frequency. Embodiments may include an input voltage between about 1V and 10V DC. The voltage controlled oscillator 520 is an electronic oscillator whose oscillation frequency is controlled by an input voltage. According to one embodiment, the input voltage from the voltage control circuit 510 causes the voltage controlled oscillator 520 to oscillate at a desired frequency. In one embodiment, the high frequency electromagnetic radiation may have a frequency between about 0.1MHz and 30 MHz. In one embodiment, the high frequency electromagnetic radiation may have a frequency between about 30MHz and 300 MHz. In one embodiment, the high frequency electromagnetic radiation may have a frequency between about 300MHz and 1 GHz. In one embodiment, the high frequency electromagnetic radiation may have a frequency between about 1GHz and 300 GHz.

According to one embodiment, electromagnetic radiation is transferred from the voltage controlled oscillator 520 to the amplifier module 530. The amplifier module 530 may include a driver/pre-amplifier 534 and a main power amplifier 536 each coupled to a power supply 539. According to one embodiment, the amplifier module 530 may operate in a pulsed mode. For example, the amplifier module 530 may have a duty cycle between 1% and 99%. In more specific embodiments, the amplifier module 530 may have a duty cycle between approximately 15% and 50%.

In one embodiment, the electromagnetic radiation may be delivered to the thermal break 550 and the applicator 542 after being processed by the amplifier module 530. However, due to the mismatch in output impedance, a portion of the power delivered to the thermal break 550 is reflected back. Thus, some embodiments include a detector module 581 that allows the levels of forward power 583 and reflected power 582 to be sensed and fed back to control circuitry module 521. It should be understood that detector module 581 can be positioned at one or more different locations in the system. In one embodiment, the control circuit module 521 interprets the forward power 583 and the reflected power 582 and determines a level of a control signal 585 for communicative coupling to the oscillator module 506 and a level of a control signal 586 for communicative coupling to the amplifier module 530. In one embodiment, the control signal 585 adjusts the oscillator module 506 to optimize the high frequency radiation coupled to the amplifier module 530. In one embodiment, control signal 586 adjusts amplifier module 530 to optimize the output power coupled to applicator 542 through thermal break 550. In one embodiment, in addition to adjusting the impedance matching in the thermal break 550, feedback control of the oscillator module 506 and the amplifier module 530 may allow the level of reflected power to be less than about 5% of the forward power. In some embodiments, feedback control of the oscillator module 506 and the amplifier module 530 may allow the reflected power to be at a level less than about 2% of the forward power.

Thus, embodiments allow for an increase in the percentage of forward power to be coupled into the processing chamber 578, and an increase in the power that can be coupled to the plasma. Further, impedance adjustment using feedback control is superior to impedance adjustment in a typical slot board antenna. In slot-plate antennas, impedance adjustment involves moving two dielectric blocks (dielectric slots) formed in an applicator. This involves mechanical movement of two separate parts in the applicator, adding to the complexity of the applicator. Furthermore, the mechanical motion is less accurate than the frequency change that can be provided by the voltage controlled oscillator 520.

Referring now to fig. 6A, a plan view of an array 640 of applicators 642 arranged to match the pattern of a circular substrate 674 is shown, according to one embodiment. By forming the plurality of applicators 642 in a pattern that substantially matches the shape of the substrate 674, the radiation field and/or plasma can be adjusted over the entire surface of the substrate 674. For example, each applicator 642 may be controlled such that a plasma having a uniform plasma density across the entire surface of the substrate 674 is formed, and/or a uniform radiation field across the entire surface of the substrate 674 is formed. Alternatively, one or more of the applicators 642 may be independently controlled to provide a plasma density that is variable across the surface of the substrate 674. In this manner, extrinsic non-uniformities present on the substrate can be corrected. For example, applicators 642 near the periphery of substrate 674 may be controlled to have different power densities than applicators near the center of substrate 674. Still further, it should be appreciated that the use of the high frequency transmission module 505 allows electromagnetic radiation to be transmitted at different frequencies and without a controlled phase relationship so as to eliminate the presence of standing waves and/or undesirable interference patterns.

In fig. 6A, applicators 642 in array 640 are packaged together in a series of concentric rings extending outward from the center of substrate 674. However, embodiments are not limited to these configurations, and any suitable spacing and/or pattern may be used depending on the requirements of the processing tool. Again, embodiments allow for applicators 642 having any symmetrical cross-section. Thus, the cross-sectional shape selection for the applicator may be selected for providing enhanced packaging efficiency.

Referring now to fig. 6B, a plan view of an array 640 of applicators 642 having a non-circular cross-section is shown, according to one embodiment. The illustrated embodiment includes an applicator 642 having a hexagonal cross-section. The use of such applicators may allow for enhanced packaging efficiency because the circumference of each applicator 642 may be a near perfect fit with adjacent applicators 642. Accordingly, the uniformity of the plasma may be even further enhanced because the spacing between the individual applicators 642 is minimized. Although fig. 6B illustrates adjacent applicators 642 sharing sidewall surfaces, it is to be understood that embodiments may also include non-circularly symmetric shaped applicators that include spaces between adjacent applicators 642.

Referring now to fig. 6C, an additional plan view of the array 640 of applicators 642 is shown, according to one embodiment. The array 640 in fig. 6C is substantially similar to the array 640 described above with respect to fig. 6A, except that a plurality of sensors 690 are also included. Multiple sensors provide enhanced process monitoring capability and may be used to provide additional feedback control of each modular high frequency power source 505. In one embodiment, sensor 690 may include one or more different sensor types 690, such as a plasma density sensor, a plasma emission sensor, a radiation field density sensor, a radiation emission sensor, or the like. Positioning the sensor across the surface of the substrate 674 allows the radiation field and/or plasma properties to be monitored at a given location in the process chamber.

According to one embodiment, each applicator 642 may be paired with a different sensor 690. In these embodiments, the output from each sensor 690 may be used to provide feedback control to the respective applicator 642 with which that sensor 690 has been paired. Additional embodiments may include pairing each sensor 690 with multiple applicators 642. For example, each sensor 690 may provide feedback control to a plurality of applicators 642 positioned proximate to the sensor 690. In yet other embodiments, feedback from multiple sensors 690 may be used as part of a multiple-input multiple-output (MIMO) control system. In these embodiments, each applicator 642 may be adjusted based on feedback from multiple sensors 690. For example, a first sensor 690 directly adjacent to the first applicator 642 may be weighted to provide a control measure for the first applicator 642 that is greater than the control measure exerted by a second sensor 690 on the first applicator 642, the second sensor 690 being further from the first applicator 642 than the first sensor 690.

Referring now to FIG. 6D, an additional plan view of an array 640 of applicators 642 positioned in the multi-zone processing tool 600 is shown, according to one embodiment. In one embodiment, the multi-zone processing tool 600 may include any number of zones. For example, the illustrated embodiment includes region 675₁-675_n. Each zone 675 can be configured to perform different processing operations on the substrate 674 that is rotated through the different zones 675. As shown, the first array 640₂Is positioned in region 675₂And a second array 640_nIs positioned in region 675_nIn (1). However, depending on the needs of the apparatus, embodiments may include a multi-zone processing tool 600 having an array 640 of applicators 642 in one or more different zones 675. The spatially tunable density of the plasma and/or radiation field provided by embodiments allows for accommodating non-uniform radial velocities of the rotating substrate 674 as the substrate 674 passes through the different regions 675.

Referring now to FIG. 7, a block diagram of an example computer system 760 of a processing tool is illustrated, according to one embodiment. In one embodiment, a computer system 760 is coupled to the processing tool and controls the processes in the processing tool. Computer system 760 may be connected (e.g., networked) to other machines in a Local Area Network (LAN), an internal network, an external network, or an interconnected network. Computer system 760 may operate in the capacity of a server, or in a client machine in a client network environment, or as a peer machine in a peer-to-peer (or decentralized) network environment. Computer system 760 may be a Personal Computer (PC), a tablet PC, a set-top box (STB), a Personal Digital Assistant (PDA), a cellular telephone, a web appliance, a server, a network router, switch or bridge, or any machine capable of executing a set of instructions (or sequence) that specify actions to be taken by that machine. Further, while computer system 760 is illustrated as a single machine, the term "machine" shall also be taken to include any collection of machines (e.g., multiple computers) that individually or jointly execute a set (or multiple sets) of instructions to perform any one or more of the methodologies discussed herein.

Computer system 760 may include a computer program product or software 722 having a non-transitory machine-readable medium with instructions stored thereon, which may be used to program computer system 760 (or other electronic devices) to perform a process according to an embodiment. A machine-readable medium includes any mechanism for storing or transmitting information in a form readable by a machine (e.g., a computer). For example, a machine-readable (e.g., computer-readable) medium includes a machine (e.g., a computer) readable storage medium (e.g., read only memory "ROM," random access memory "RAM," magnetic disk storage media, optical storage media, flash memory devices, etc.), a machine (e.g., a computer) readable transmission medium (e.g., electronic, optical, acoustical or other form of propagated signals (e.g., infrared signals, digital signals, etc.)), and so forth.

In one embodiment, computer system 760 includes a system processor 702, a main memory 704 (e.g., Read Only Memory (ROM), flash memory, Dynamic Random Access Memory (DRAM), such as Synchronous DRAM (SDRAM) or Rambus DRAM (RDRAM), etc.), a static memory 706 (e.g., flash memory, Static Random Access Memory (SRAM), etc.), and a secondary memory 718 (e.g., a data storage device) that communicate with each other via a bus 730.

The system processor 702 represents one or more general-purpose processing devices such as a micro-system processor, central processing unit, or the like. More specifically, the system processor may be a Complex Instruction Set Computing (CISC) microsystem processor, a Reduced Instruction Set Computing (RISC) microsystem processor, a Very Long Instruction Word (VLIW) microsystem processor, a system processor implementing other instruction sets, or a system processor implementing a combination of instruction sets. The system processor 702 may also be one or more of the following: application specific processing devices such as Application Specific Integrated Circuits (ASICs), field changeable logic gate arrays (FPGAs), Digital Signal Processors (DSPs), network system processors, or the like. The system processor 702 is configured to execute the processing logic 726 for performing the operations described herein.

Computer system 760 may further include a system network interface device 708 for communicating with other devices or machines. The computer system may also include a video display unit 710, such as a Liquid Crystal Display (LCD), a light emitting diode display (LED), or a Cathode Ray Tube (CRT), an alphanumeric input device 712, such as a keyboard, a cursor control device 714, such as a mouse, and a signal generation device 716, such as a speaker.

The secondary memory 718 may include a machine-accessible storage medium 731 (or more particularly, a computer-readable storage medium) having stored thereon one or more sets of instructions (e.g., software 722) embodying one or more of the methodologies or functions described herein. The software 722 may also reside, completely or at least partially, within the main memory 704 and/or within the system processor 702 during execution thereof by the computer system 760, the main memory 704 and the system processor 702 also constituting machine-readable storage media. The software 722 may further be transmitted or received over a network 720 via the system network interface device 708. In one embodiment, the network interface device 708 may operate using an RF coupling, an optical coupling, an acoustic coupling, or an inductive coupling.

Although the machine-accessible storage medium 731 is shown in an example embodiment to be a single medium, the term "machine-readable storage medium" shall include a single medium or multiple media (e.g., a centralized or distributed database, and/or associated caches and servers) that store the one or more sets of instructions. The term "machine-readable storage medium" also includes any medium that is capable of storing or encoding a set of instructions for execution by the machine and that cause the machine to perform any one or more of the methodologies. The term "machine-readable storage medium" shall accordingly be taken to include, but not be limited to, solid-state memories, and optical and magnetic media.

Certain example embodiments have been described in the foregoing specification. It should be understood. Various modifications may be made without departing from the scope of the appended claims. The specification and drawings are, accordingly, to be regarded in an illustrative sense rather than a restrictive sense.