Metallized isolating film, metallized isolating film group and metallized isolating film capacitor

文档序号:408629 发布日期:2021-12-17 浏览:25次 中文

阅读说明:本技术 一种金属化隔离膜、金属化隔离膜组及金属化隔离膜电容器 (Metallized isolating film, metallized isolating film group and metallized isolating film capacitor ) 是由 向艳雄 陈永强 罗荣海 于 2021-09-03 设计创作,主要内容包括:本发明公开一种金属化隔离膜及电容器,其中,金属化隔离膜包括介质薄膜、金属化电极;金属化电极覆盖在介质薄膜上,金属化电极由纵向第一绝缘间隙分隔为非分割电极和沿纵向连续重复的金属化隔离单元,每个金属化隔离单元与非分割电极之间通过第一级保险丝连接,相邻金属化隔离单元之间通过横向第一绝缘间隙隔开;金属化隔离单元通过纵向第二绝缘间隙分隔为N级分割电极,N为≧2的自然数;第N级分割电极的单个网格电极对应连接的第N级保险丝并联后的等效电阻大于第N-1级分割电极的单个网格电极对应连接的第N-1级保险丝并联后的等效电阻。本发明实现当金属化隔离膜中的某部分金属化电极发生电弱点击穿时,能有效隔离该部分的金属化电极。(The invention discloses a metallized isolating film and a capacitor, wherein the metallized isolating film comprises a dielectric film and a metallized electrode; the metalized electrodes are covered on the dielectric film and are divided into non-divided electrodes and metalized isolation units which are continuously repeated along the longitudinal direction by a first longitudinal insulation gap, each metalized isolation unit is connected with the non-divided electrodes through a first-stage fuse, and adjacent metalized isolation units are separated through a first transverse insulation gap; the metallized isolation unit is divided into N-level segmentation electrodes through a longitudinal second insulation gap, wherein N is a natural number larger than or equal to 2; the equivalent resistance of the parallel connection of the Nth-level fuses correspondingly connected with the single grid electrode of the Nth-level segmentation electrode is larger than the equivalent resistance of the parallel connection of the N-1-level fuses correspondingly connected with the single grid electrode of the N-1-level segmentation electrode. The invention realizes that when the electric weak point breakdown of a certain part of the metallized electrode in the metallized isolating film occurs, the part of the metallized electrode can be effectively isolated.)

1. A metallized separator film, comprising:

a dielectric film;

the metalized electrodes cover the dielectric film and reserve insulating edges on the dielectric film, the metalized electrodes are divided into non-divided electrodes and metalized isolation units which are continuously repeated along the longitudinal direction by a first longitudinal insulating gap, each metalized isolation unit is connected with the non-divided electrodes through a first-stage fuse, and the adjacent metalized isolation units are separated through a first transverse insulating gap; the metalized isolation unit is divided into N stages of segmentation electrodes through a longitudinal second insulation gap, N is a natural number larger than or equal to 2, the first stage segmentation electrode is connected with the non-segmentation electrode through the first stage fuse, the first stage segmentation electrode is connected with the second stage segmentation electrode through the second stage fuse, the second stage segmentation electrode is connected with the third stage segmentation electrode through the third stage fuse, sequentially, the (N-1) th stage segmentation electrode is connected with the N stage segmentation electrode through the N stage fuse, the first stage segmentation electrode is adjacent to the non-segmentation electrode, and the N stage segmentation electrode is adjacent to the insulation edge; the first-stage division electrode to the Nth-stage division electrode are respectively formed by at least one single grid electrode; the equivalent resistance of the parallel connection of the Nth-level fuses correspondingly connected with the single grid electrode of the Nth-level segmentation electrode is larger than the equivalent resistance of the parallel connection of the N-1-level fuses correspondingly connected with the single grid electrode of the N-1-level segmentation electrode.

2. The metallized separator according to claim 1, wherein the area of the individual grid electrodes corresponding to the divided electrodes is gradually decreased from the first-stage divided electrode to the Nth-stage divided electrode.

3. The metallized separator film of claim 1, wherein said second-level dividing electrode to said nth-level dividing electrode are separated by a lateral second insulating gap, and the number of said individual grid electrodes increases sequentially from said second-level dividing electrode to said nth-level dividing electrode.

4. The metallized separator film of claim 1, wherein the ratio of the width of said non-divided electrode in the lateral direction to the width of said metallized separator film is 1/2 or less.

5. The metallized separator film of claim 1, wherein the ratio of the width of said first-level segmented electrode in the lateral direction to the width of said metallized separator elements is equal to or less than 1/2.

6. The metallized separator according to claim 1, wherein said metallized separator element is divided into two stages of divided electrodes by a longitudinal second insulating gap, the number of the single grid electrodes of said second stage of divided electrodes is greater than the number of the single grid electrodes of said first stage of divided electrodes, and the equivalent resistance of the parallel connection of said second stage fuses connected to the single grid electrodes of said second stage of divided electrodes is greater than the equivalent resistance of the parallel connection of said first stage fuses connected to the single grid electrodes of said first stage of divided electrodes.

7. The metallized separator film according to claim 1, wherein said metallized separator elements are divided into three levels of divided electrodes by longitudinal second insulating gaps, the number of individual grid electrodes of said third level of divided electrodes is greater than the number of individual grid electrodes of said second level of divided electrodes, and the number of individual grid electrodes of said second level of divided electrodes is greater than the number of individual grid electrodes of said first level of divided electrodes; the equivalent resistance of the parallelly connected third stage fuses correspondingly connected to the single grid electrode of the third stage division electrode is greater than the equivalent resistance of the parallelly connected second stage fuses correspondingly connected to the single grid electrode of the second stage division electrode, and the equivalent resistance of the parallelly connected second stage fuses correspondingly connected to the single grid electrode of the second stage division electrode is greater than the equivalent resistance of the parallelly connected first stage fuses correspondingly connected to the single grid electrode of the first stage division electrode.

8. A metalized isolation film group, comprising:

the first metalized isolation film is formed by covering a first metalized electrode on a first film surface of a dielectric film, a first insulation edge is reserved on the first film surface of the dielectric film, the first metalized electrode is divided into a non-split electrode and metalized isolation units which are continuously repeated along the longitudinal direction by a longitudinal first insulation gap, each metalized isolation unit is connected with the non-split electrode through a first-stage fuse, and adjacent metalized isolation units are separated through a transverse first insulation gap; the metallization isolation unit is divided into N stages of segmentation electrodes through a longitudinal second insulation gap, N is a natural number larger than or equal to 2, the first stage segmentation electrode is connected with the non-segmentation electrode through the first stage fuse, the first stage segmentation electrode is connected with the second stage segmentation electrode through the second stage fuse, the second stage segmentation electrode is connected with the third stage segmentation electrode through the third stage fuse, sequentially, the (N-1) th stage segmentation electrode is connected with the N stage segmentation electrode through the N stage fuse, the first stage segmentation electrode is adjacent to the non-segmentation electrode, and the N stage segmentation electrode is adjacent to the first insulation edge; the first-stage division electrode to the Nth-stage division electrode are respectively formed by at least one single grid electrode; the equivalent resistance of the parallel connection of the Nth-level fuses correspondingly connected with the single grid electrode of the Nth-level segmentation electrode is larger than the equivalent resistance of the parallel connection of the N-1-level fuses correspondingly connected with the single grid electrode of the N-1-level segmentation electrode;

and a second metalized isolation film formed by covering a second metalized electrode on the second film surface of the dielectric film, wherein a second insulating edge is reserved on the second film surface of the dielectric film, the second metalized isolation film and the first metalized isolation film are laminated and staggered to form a staggered edge, and projections of a non-split electrode of the second metalized isolation film and a non-split electrode of the first metalized isolation film in a plan view state are mutually independent.

9. The metal-oxide-semiconductor barrier film of claim 8, wherein the area of the individual grid electrodes of the divided electrodes decreases from the first-stage divided electrode to the Nth-stage divided electrode.

10. The metallization isolation film package of claim 8, wherein said second level dividing electrode to said nth level dividing electrode are separated by a lateral second insulating gap.

11. The metallization isolation film assembly of claim 8, wherein said second metallization electrode is identical in structure to said first metallization electrode, said second metallization electrode is divided into non-divided electrodes by a longitudinal first insulation gap and metallization isolation units continuously repeated along the longitudinal direction, each metallization isolation unit is connected to said non-divided electrode by a first-level fuse, and adjacent metallization isolation units are separated by a transverse first insulation gap; the metallization isolation unit is divided into N stages of segmentation electrodes through a longitudinal second insulation gap, N is a natural number larger than or equal to 2, the first stage segmentation electrode is connected with the non-segmentation electrode through the first stage fuse, the first stage segmentation electrode is connected with the second stage segmentation electrode through the second stage fuse, the second stage segmentation electrode is connected with the third stage segmentation electrode through the third stage fuse, sequentially, the (N-1) th stage segmentation electrode is connected with the N stage segmentation electrode through the N stage fuse, the first stage segmentation electrode is adjacent to the non-segmentation electrode, and the N stage segmentation electrode is adjacent to the second insulation edge; the first-stage division electrode to the Nth-stage division electrode are respectively formed by at least one single grid electrode; the equivalent resistance of the parallel connection of the Nth-level fuses correspondingly connected with the single grid electrode of the Nth-level segmentation electrode is larger than the equivalent resistance of the parallel connection of the N-1-level fuses correspondingly connected with the single grid electrode of the N-1-level segmentation electrode.

12. The metallization isolation film package of claim 11, wherein said second metallization isolation film is mirror-stacked with said first metallization isolation film; when the second metalized isolation film is sequentially provided with the non-segmentation electrode, the first-stage segmentation electrode, the Nth-stage segmentation electrode and the second insulation edge, the first insulation edge, the Nth-stage segmentation electrode, the first-stage segmentation electrode and the non-segmentation electrode are sequentially provided in the same direction corresponding to the first metalized isolation film.

13. The metallization separator package of claim 12, wherein the nth split electrode of the second metallization electrode at least partially overlaps the first split electrode of the first metallization electrode, the nth-1 th split electrode of the second metallization electrode at least partially overlaps the second split electrode of the first metallization electrode, and sequentially until the first split electrode of the second metallization electrode and the nth split electrode of the first metallization electrode are at least partially overlapped in plan view.

14. The metallization separator package of claim 13, wherein said metallization separator unit of said first metallization separator is divided into two-stage divided electrodes by a longitudinal second insulating gap, and correspondingly, said metallization separator unit of said second metallization separator is divided into two-stage divided electrodes by a longitudinal second insulating gap; when the second metallized isolating film is sequentially distributed into a non-split electrode, a first-stage split electrode, a second-stage split electrode and a second insulating edge, the corresponding first metallized isolating film is sequentially distributed into a first insulating edge, a second-stage split electrode, a first-stage split electrode and the non-split electrode in the same direction; the first-stage division electrode of the second metalized isolation film is at least partially overlapped with the second-stage division electrode of the first metalized isolation film, and the second-stage division electrode of the second metalized isolation film is at least partially overlapped with the first-stage division electrode of the first metalized isolation film in a plan view state.

15. The metallized isolating film group according to claim 14, wherein in said first metallized isolating film and said second metallized isolating film, the number of single grid electrodes of said second-stage divided electrode is greater than the number of single grid electrodes of said first-stage divided electrode, and the equivalent resistance of said second-stage fuse connected in parallel to said single grid electrode of said second-stage divided electrode is greater than the equivalent resistance of said first-stage fuse connected in parallel to said single grid electrode of said first-stage divided electrode.

16. The set of metallized isolation films according to claim 13, wherein said metallized isolation unit of said first metallized isolation film is divided into three-level divided electrodes by a longitudinal second insulation gap, and correspondingly, said metallized isolation unit of said second metallized isolation film is divided into three-level divided electrodes by a longitudinal second insulation gap; when the second metallized isolating film is sequentially distributed into a non-split electrode, a first-stage split electrode, a second-stage split electrode, a third-stage split electrode and a second insulating edge, the corresponding first metallized isolating film is sequentially distributed into the first insulating edge, the third-stage split electrode, the second-stage split electrode, the first-stage split electrode and the non-split electrode in the same direction; the first-stage division electrode of the second metalized isolation film and the third-stage division electrode of the first metalized isolation film, the second-stage division electrode of the second metalized isolation film and the second-stage division electrode of the first metalized isolation film, and the third-stage division electrode of the second metalized isolation film and the first-stage division electrode of the first metalized isolation film are at least partially overlapped in a plan view state.

17. The metallized-release film assembly according to claim 16, wherein said first metallized-release film and said second metallized-release film have a number of individual grid electrodes of said third-stage split electrode that is greater than a number of individual grid electrodes of said second-stage split electrode that is greater than a number of individual grid electrodes of said first-stage split electrode; the equivalent resistance of the parallelly connected third stage fuses correspondingly connected to the single grid electrode of the third stage division electrode is greater than the equivalent resistance of the parallelly connected second stage fuses correspondingly connected to the single grid electrode of the second stage division electrode, and the equivalent resistance of the parallelly connected second stage fuses correspondingly connected to the single grid electrode of the second stage division electrode is greater than the equivalent resistance of the parallelly connected first stage fuses correspondingly connected to the single grid electrode of the first stage division electrode.

18. The metallization isolation film of claim 12, wherein the width of the non-divided electrode of the first metallization isolation film in the lateral direction is less than or equal to the sum of the width of the insulating edge of the second metallization isolation film in the lateral direction and the width of the misalignment in the lateral direction; correspondingly, the width value of the non-split electrode of the second metalized isolation film in the transverse direction is less than or equal to the sum of the width value of the insulating edge of the first metalized isolation film in the transverse direction and the width value of the staggered edge in the transverse direction.

19. The set of metallization spacers of claim 12, wherein a ratio of a width of the first-level segment electrodes of the first and second metallization spacers in a lateral direction to a width of the metallization spacers is equal to or less than 1/2.

20. The set of metallization spacers of claim 12, wherein the width of the non-split electrode of the first metallization spacer in the lateral direction is greater than the sum of the width of the insulating edge of the second metallization spacer in the lateral direction and the width of the misalignment in the lateral direction, and the ratio of the width of the non-split electrode of the first metallization spacer in the lateral direction to the width of the first metallization spacer in the lateral direction is less than 1/2; correspondingly, the width value of the non-split electrode of the second metalized isolation film in the transverse direction is larger than the sum of the width value of the insulating edge of the first metalized isolation film in the transverse direction and the width value of the staggered edge in the transverse direction, and the ratio of the width value of the non-split electrode of the second metalized isolation film in the transverse direction to the width value of the second metalized isolation film in the transverse direction is smaller than 1/2.

21. The method as claimed in claim 8, wherein the second metalized layer of the second metalized isolation film is a non-divided electrode, and when the first metalized isolation film is sequentially disposed as a non-divided electrode, a first-level divided electrode to an Nth-level divided electrode, and a first insulating edge, the corresponding second metalized isolation film is sequentially disposed with a second insulating edge and a non-divided electrode in the same direction.

22. The metallized separator film package of claim 8, wherein said dielectric film has a first film side covered with at least two sets of said first metallized electrodes; at least two groups of second metallized electrodes are covered on the second film surface of the dielectric film; when the second metalized isolation film is sequentially distributed with a second insulating edge, an Nth-level segmentation electrode, a first-level segmentation electrode and a non-segmentation electrode, the corresponding first metalized isolation film is sequentially distributed with the non-segmentation electrode, the first-level segmentation electrode, the Nth-level segmentation electrode and the first insulating edge in the same direction.

23. The set of metallization spacers as recited in claim 22, wherein said nth level split electrode of said second metallization electrode at least partially overlaps said first level split electrode of said first metallization electrode, said nth-1 level split electrode of said second metallization electrode at least partially overlaps said second level split electrode of said first metallization electrode, sequentially until said first level split electrode of said second metallization electrode and said nth level split electrode of said first metallization electrode are at least partially overlapped in plan view.

24. The set of metallized separator films of claim 22, wherein said dielectric film has a first film side covered with two sets of said first metallized electrodes; two groups of second metallized electrodes are covered on the second film surface of the dielectric film; the two groups of first metallized electrodes are arranged in a mirror symmetry mode, and the two groups of second metallized electrodes are arranged in a mirror symmetry mode.

25. A metallized separator capacitor comprising the metallized separator film assembly of any one of claims 8 to 24.

Technical Field

The invention relates to the technical field of capacitors, in particular to a metalized isolation film, a metalized isolation film group and a metalized isolation film capacitor.

Background

With the rapid development of power electronic technology, the application of the metallized film capacitor in the fields of industrial control, new energy, automobile electronics, rail transit, power grid and the like is more and more extensive, and the problem of failure safety of the metallized film capacitor is more and more prominent.

In the related art, in order to ensure the safety of the metallized film capacitor, metallized isolation film technologies of various mesh shapes and sizes have been developed, such as a T-shaped large mesh isolation film or a diamond-shaped or rectangular small mesh isolation film design, but generally cannot balance the performance or requirements of the metallized film capacitor in all aspects, including:

when the area of the isolated grid unit is large, the design of a metalized coating is matched, although the influence on the utilization rate of a metalized film and the equivalent series resistance is not large, the size of a corresponding fuse is also large because the area of the isolated grid unit is large, the current required to pass through is large, and when the isolated grid unit is subjected to electric weak point breakdown, the fuse is not easy to break, so that the safety coefficient of a metalized film capacitor is not sufficient.

When the area of the isolation grid unit is smaller, the area of an insulation gap between the isolation grids is larger, the utilization rate of the effective area of the metallized film is greatly reduced, and the equivalent series resistance is obviously improved compared with that of a metallized film capacitor designed by a non-isolation film.

Thirdly, the fuse size between the isolation film grid cells is not properly designed, so that the capacitor is sensitive to voltage fluctuation, the capacitance loss is too fast in normal use, and the normal working life is shortened.

Disclosure of Invention

The present invention is directed to solving, at least to some extent, one of the technical problems in the art described above. Therefore, an object of the present invention is to provide a metalized isolation film, which reduces the area of a metalized electrode to be isolated when an electrical weak point breakdown occurs in a certain portion of the metalized isolation film, so as to effectively isolate the portion of the metalized electrode, and simultaneously, not affect the normal operation of the metalized isolation film, and improve the working life of the metalized isolation film under the condition of ensuring the safety of the metalized isolation film.

The second purpose of the invention is to provide a metalized isolation film group, which is to reduce the area of a metalized electrode to be isolated when a certain part of the metalized electrodes in the metalized isolation film have electric weak point breakdown, effectively isolate the part of the metalized electrodes, simultaneously not influence the normal work of a metalized isolation film capacitor, and prolong the service life of the metalized isolation film capacitor under the condition of ensuring the safety of the metalized isolation film capacitor.

The third purpose of the invention is to provide a metallized isolating film capacitor.

In order to achieve the above object, a first embodiment of the present invention provides a metallized isolation film, including:

a dielectric film;

the metalized electrodes cover the dielectric film and reserve insulating edges on the dielectric film, the metalized electrodes are divided into non-divided electrodes and metalized isolation units which are continuously repeated along the longitudinal direction by a first longitudinal insulating gap, each metalized isolation unit is connected with the non-divided electrodes through a first-stage fuse, and the adjacent metalized isolation units are separated through a first transverse insulating gap; the metalized isolation unit is divided into N stages of segmentation electrodes through a longitudinal second insulation gap, N is a natural number larger than or equal to 2, the first stage segmentation electrode is connected with the non-segmentation electrode through the first stage fuse, the first stage segmentation electrode is connected with the second stage segmentation electrode through the second stage fuse, the second stage segmentation electrode is connected with the third stage segmentation electrode through the third stage fuse, sequentially, the (N-1) th stage segmentation electrode is connected with the N stage segmentation electrode through the N stage fuse, the first stage segmentation electrode is adjacent to the non-segmentation electrode, and the N stage segmentation electrode is adjacent to the insulation edge; the first-stage division electrode to the Nth-stage division electrode are respectively formed by at least one single grid electrode; the equivalent resistance of the parallel connection of the Nth-level fuses correspondingly connected with the single grid electrode of the Nth-level segmentation electrode is larger than the equivalent resistance of the parallel connection of the N-1-level fuses correspondingly connected with the single grid electrode of the N-1-level segmentation electrode.

According to the metallized isolating membrane provided by the embodiment of the invention, since the metallized isolating unit is separated into N-level dividing electrodes through the second longitudinal insulating gap, N is a natural number larger than or equal to 2, the first-level dividing electrode is connected with the non-dividing electrode through the first-level fuse, the first-level dividing electrode is connected with the second-level dividing electrode through the second-level fuse, the second-level dividing electrode is connected with the third-level dividing electrode through the third-level fuse, in turn, the N-1-level dividing electrode is connected with the N-level dividing electrode through the N-level fuse, and the first-level dividing electrode to the N-level dividing electrode are respectively formed by at least one single grid electrode, the equivalent resistance of the parallel connection of the Nth-level fuses correspondingly connected with the single grid electrode of the Nth-level segmentation electrode is larger than the equivalent resistance of the parallel connection of the N-1-level fuses correspondingly connected with the single grid electrode of the N-1-level segmentation electrode.

When the electric weak point breakdown occurs, the fuse correspondingly connected with the single grid electrode where the breakdown point is located is fused, the corresponding single grid electrode is isolated in an insulating mode, and the fuse is more easily fused as the equivalent resistance of the fuse correspondingly connected with the single grid electrode which is farther away from the non-divided electrode is larger after the fuse is connected in parallel, so that the working safety of the metallized isolation film capacitor is ensured when the breakdown point occurs on the single grid electrode which is farther away from the non-divided electrode. Meanwhile, adjacent metalized isolation units are separated by the transverse first insulation gap, so that even if a certain metalized isolation unit is isolated by electric weak point breakdown, the normal work of other metalized isolation units is not influenced. Therefore, when the electric weak point breakdown of a certain part of the metalized electrodes in the metalized isolation film occurs, the area of the metalized electrodes needing to be isolated is reduced, the part of the metalized electrodes can be effectively isolated, the normal work of the metalized isolation film is not influenced, and the working life is prolonged under the condition of ensuring the safety of the metalized isolation film.

In addition, the metallized isolating film provided by the above embodiment of the invention may also have the following additional technical features:

optionally, the area of the single grid electrode corresponding to the dividing electrode is gradually reduced from the first-stage dividing electrode to the nth-stage dividing electrode. When the breakdown point occurs at a single grid electrode farther from the non-segmented electrode, less capacity loss results because the area of the single grid electrode farther from the non-segmented electrode is smaller.

Alternatively, the second-stage divisional electrodes to the nth-stage divisional electrodes are separated by the lateral second insulation gap, and the number of individual grid electrodes from the second-stage divisional electrodes to the nth-stage divisional electrodes increases in sequence.

Optionally, a ratio of a width of the non-split electrode in the lateral direction to a width of the metallization isolation film is equal to or less than 1/2.

Optionally, a ratio of a width of the first-stage split electrode in the lateral direction to a width of the metalized isolation unit is equal to or less than 1/2.

Optionally, the metalized isolation unit is separated into two-stage split electrodes by a longitudinal second insulation gap, the number of the single grid electrodes of the second-stage split electrode is greater than that of the single grid electrodes of the first-stage split electrode, and the equivalent resistance of the parallel connection of the second-stage fuses correspondingly connected to the single grid electrodes of the second-stage split electrode is greater than that of the parallel connection of the first-stage fuses correspondingly connected to the single grid electrodes of the first-stage split electrode.

Optionally, the metallized isolation unit is separated into three-stage split electrodes by a longitudinal second insulation gap, the number of single grid electrodes of the third-stage split electrode is greater than that of single grid electrodes of the second-stage split electrode, and the number of single grid electrodes of the second-stage split electrode is greater than that of single grid electrodes of the first-stage split electrode; the equivalent resistance of the parallelly connected third stage fuses correspondingly connected to the single grid electrode of the third stage division electrode is greater than the equivalent resistance of the parallelly connected second stage fuses correspondingly connected to the single grid electrode of the second stage division electrode, and the equivalent resistance of the parallelly connected second stage fuses correspondingly connected to the single grid electrode of the second stage division electrode is greater than the equivalent resistance of the parallelly connected first stage fuses correspondingly connected to the single grid electrode of the first stage division electrode.

In order to achieve the above object, a second aspect of the present invention provides a metallization isolation film set, including:

the first metalized isolation film is formed by covering a first metalized electrode on a first film surface of a dielectric film, a first insulation edge is reserved on the first film surface of the dielectric film, the first metalized electrode is divided into a non-split electrode and metalized isolation units which are continuously repeated along the longitudinal direction by a longitudinal first insulation gap, each metalized isolation unit is connected with the non-split electrode through a first-stage fuse, and adjacent metalized isolation units are separated through a transverse first insulation gap; the metallization isolation unit is divided into N stages of segmentation electrodes through a longitudinal second insulation gap, N is a natural number larger than or equal to 2, the first stage segmentation electrode is connected with the non-segmentation electrode through the first stage fuse, the first stage segmentation electrode is connected with the second stage segmentation electrode through the second stage fuse, the second stage segmentation electrode is connected with the third stage segmentation electrode through the third stage fuse, sequentially, the (N-1) th stage segmentation electrode is connected with the N stage segmentation electrode through the N stage fuse, the first stage segmentation electrode is adjacent to the non-segmentation electrode, and the N stage segmentation electrode is adjacent to the first insulation edge; the first-stage division electrode to the Nth-stage division electrode are respectively formed by at least one single grid electrode; the equivalent resistance of the parallel connection of the Nth-level fuses correspondingly connected with the single grid electrode of the Nth-level segmentation electrode is larger than the equivalent resistance of the parallel connection of the N-1-level fuses correspondingly connected with the single grid electrode of the N-1-level segmentation electrode;

and a second metalized isolation film formed by covering a second metalized electrode on the second film surface of the dielectric film, wherein a second insulating edge is reserved on the second film surface of the dielectric film, the second metalized isolation film and the first metalized isolation film are laminated and staggered to form a staggered edge, and projections of a non-split electrode of the second metalized isolation film and a non-split electrode of the first metalized isolation film in a plan view state are mutually independent.

According to the metalized isolation film group provided by the embodiment of the invention, the metalized isolation unit is divided into N levels of segmentation electrodes through the second longitudinal insulation gap, N is a natural number not less than 2, the first level segmentation electrode is connected with the non-segmentation electrode through the first level fuse, the first level segmentation electrode is connected with the second level segmentation electrode through the second level fuse, the second level segmentation electrode is connected with the third level segmentation electrode through the third level fuse, in turn, the N-1 level segmentation electrode is connected with the N level segmentation electrode through the N level fuse, the first level segmentation electrode to the N level segmentation electrode are respectively formed by at least one single grid electrode, the equivalent resistance of the parallel connection of the Nth-level fuses correspondingly connected with the single grid electrode of the Nth-level segmentation electrode is larger than the equivalent resistance of the parallel connection of the N-1-level fuses correspondingly connected with the single grid electrode of the N-1-level segmentation electrode.

When the electric weak point breakdown occurs, the fuse correspondingly connected with the single grid electrode where the breakdown point is located is fused, the corresponding single grid electrode is isolated in an insulating mode, and the fuse is more easily fused as the equivalent resistance of the fuse correspondingly connected with the single grid electrode which is farther away from the non-divided electrode is larger after the fuse is connected in parallel, so that the working safety of the metallized isolation film capacitor is ensured when the breakdown point occurs on the single grid electrode which is farther away from the non-divided electrode. Meanwhile, adjacent metalized isolation units are separated by the transverse first insulation gap, so that even if a certain metalized isolation unit is isolated by electric weak point breakdown, the normal work of other metalized isolation units is not influenced. Therefore, when the electric weak point breakdown of a certain part of the metalized electrodes in the metalized isolation film occurs, the area of the metalized electrodes needing to be isolated is reduced, the part of the metalized electrodes can be effectively isolated, the normal work of the metalized isolation film is not influenced, and the working life is prolonged under the condition of ensuring the safety of the metalized isolation film.

In addition, the metallization isolation film group provided by the above embodiment of the present invention may further have the following additional technical features:

optionally, the area of the single grid electrode corresponding to the dividing electrode is gradually reduced from the first-stage dividing electrode to the nth-stage dividing electrode. When the breakdown point occurs at a single grid electrode farther from the non-segmented electrode, less capacity loss results because the area of the single grid electrode farther from the non-segmented electrode is smaller.

Optionally, the second-stage divisional electrode through the nth-stage divisional electrode are separated by a lateral second insulation gap.

Optionally, the second metallized electrode has the same structure as the first metallized electrode, the second metallized electrode is divided into a non-split electrode and metallized isolation units continuously repeated along the longitudinal direction by a longitudinal first insulation gap, each metallized isolation unit is connected with the non-split electrode through a first-stage fuse, and adjacent metallized isolation units are separated by a transverse first insulation gap; the metallization isolation unit is divided into N stages of segmentation electrodes through a longitudinal second insulation gap, N is a natural number larger than or equal to 2, the first stage segmentation electrode is connected with the non-segmentation electrode through the first stage fuse, the first stage segmentation electrode is connected with the second stage segmentation electrode through the second stage fuse, the second stage segmentation electrode is connected with the third stage segmentation electrode through the third stage fuse, sequentially, the (N-1) th stage segmentation electrode is connected with the N stage segmentation electrode through the N stage fuse, the first stage segmentation electrode is adjacent to the non-segmentation electrode, and the N stage segmentation electrode is adjacent to the second insulation edge; the first-stage division electrode to the Nth-stage division electrode are respectively formed by at least one single grid electrode; the equivalent resistance of the parallel connection of the Nth-level fuses correspondingly connected with the single grid electrode of the Nth-level segmentation electrode is larger than the equivalent resistance of the parallel connection of the N-1-level fuses correspondingly connected with the single grid electrode of the N-1-level segmentation electrode.

Specifically, the second metalized isolation film is mirror-image-stacked with the first metalized isolation film; when the second metalized isolation film is sequentially provided with the non-segmentation electrode, the first-stage segmentation electrode, the Nth-stage segmentation electrode and the second insulation edge, the first insulation edge, the Nth-stage segmentation electrode, the first-stage segmentation electrode and the non-segmentation electrode are sequentially provided in the same direction corresponding to the first metalized isolation film.

Further, the nth-level split electrode of the second metallized electrode and the first-level split electrode of the first metallized electrode, the nth-1-level split electrode of the second metallized electrode and the second-level split electrode of the first metallized electrode are at least partially overlapped in a plan view state sequentially until the first-level split electrode of the second metallized electrode and the nth-level split electrode of the first metallized electrode are overlapped.

Specifically, the metallization isolation unit of the first metallization isolation film is divided into two-stage split electrodes by a longitudinal second insulation gap, and correspondingly, the metallization isolation unit of the second metallization isolation film is divided into two-stage split electrodes by a longitudinal second insulation gap; when the second metallized isolating film is sequentially distributed into a non-split electrode, a first-stage split electrode, a second-stage split electrode and a second insulating edge, the corresponding first metallized isolating film is sequentially distributed into a first insulating edge, a second-stage split electrode, a first-stage split electrode and the non-split electrode in the same direction; the first-stage division electrode of the second metalized isolation film is at least partially overlapped with the second-stage division electrode of the first metalized isolation film, and the second-stage division electrode of the second metalized isolation film is at least partially overlapped with the first-stage division electrode of the first metalized isolation film in a plan view state.

Further, in the first metalized isolation film and the second metalized isolation film, the number of the single grid electrodes of the second-stage division electrode is greater than that of the single grid electrodes of the first-stage division electrode, and the equivalent resistance of the parallel connection of the second-stage fuses correspondingly connected to the single grid electrodes of the second-stage division electrode is greater than that of the parallel connection of the first-stage fuses correspondingly connected to the single grid electrodes of the first-stage division electrode.

Specifically, the metallization isolation unit of the first metallization isolation film is separated into three-level split electrodes through a longitudinal second insulation gap, and correspondingly, the metallization isolation unit of the second metallization isolation film is separated into three-level split electrodes through a longitudinal second insulation gap; when the second metallized isolating film is sequentially distributed into a non-split electrode, a first-stage split electrode, a second-stage split electrode, a third-stage split electrode and a second insulating edge, the corresponding first metallized isolating film is sequentially distributed into the first insulating edge, the third-stage split electrode, the second-stage split electrode, the first-stage split electrode and the non-split electrode in the same direction; the first-stage division electrode of the second metalized isolation film and the third-stage division electrode of the first metalized isolation film, the second-stage division electrode of the second metalized isolation film and the second-stage division electrode of the first metalized isolation film, and the third-stage division electrode of the second metalized isolation film and the first-stage division electrode of the first metalized isolation film are at least partially overlapped in a plan view state.

Furthermore, in the first metalized isolation film and the second metalized isolation film, the number of single grid electrodes of the third-stage split electrode is greater than that of single grid electrodes of the second-stage split electrode, and the number of single grid electrodes of the second-stage split electrode is greater than that of single grid electrodes of the first-stage split electrode; the equivalent resistance of the parallelly connected third stage fuses correspondingly connected to the single grid electrode of the third stage division electrode is greater than the equivalent resistance of the parallelly connected second stage fuses correspondingly connected to the single grid electrode of the second stage division electrode, and the equivalent resistance of the parallelly connected second stage fuses correspondingly connected to the single grid electrode of the second stage division electrode is greater than the equivalent resistance of the parallelly connected first stage fuses correspondingly connected to the single grid electrode of the first stage division electrode.

Specifically, the width value of the non-split electrode of the first metalized isolation film in the transverse direction is less than or equal to the sum of the width value of the insulating edge of the second metalized isolation film in the transverse direction and the width value of the staggered edge in the transverse direction; correspondingly, the width value of the non-split electrode of the second metalized isolation film in the transverse direction is less than or equal to the sum of the width value of the insulating edge of the first metalized isolation film in the transverse direction and the width value of the staggered edge in the transverse direction.

Specifically, the ratio of the width of the first-stage split electrodes in the transverse direction of the first metalized isolation film to the width of the metalized isolation unit in the transverse direction of the first-stage split electrodes in the first metalized isolation film and the second metalized isolation film is not more than 1/2.

Specifically, the width value of the non-split electrode of the first metalized isolation film in the transverse direction is larger than the sum of the width value of the insulating edge of the second metalized isolation film in the transverse direction and the width value of the staggered edge in the transverse direction, and the ratio of the width value of the non-split electrode of the first metalized isolation film in the transverse direction to the width value of the first metalized isolation film in the transverse direction is smaller than 1/2; correspondingly, the width value of the non-split electrode of the second metalized isolation film in the transverse direction is larger than the sum of the width value of the insulating edge of the first metalized isolation film in the transverse direction and the width value of the staggered edge in the transverse direction, and the ratio of the width value of the non-split electrode of the second metalized isolation film in the transverse direction to the width value of the second metalized isolation film in the transverse direction is smaller than 1/2.

Optionally, the second metalized electrode of the second metalized isolation film is a non-divided electrode, and when the first metalized isolation film is sequentially arranged as the non-divided electrode, the first-level divided electrode to the nth-level divided electrode, and the first insulating edge, the corresponding second metalized isolation film is sequentially arranged with the second insulating edge and the non-divided electrode in the same direction.

Optionally, at least two sets of the first metallized electrodes are coated on the first face of the dielectric thin film; at least two groups of second metallized electrodes are covered on the second film surface of the dielectric film; when the second metalized isolation film is sequentially distributed with a second insulating edge, an Nth-level segmentation electrode, a first-level segmentation electrode and a non-segmentation electrode, the corresponding first metalized isolation film is sequentially distributed with the non-segmentation electrode, the first-level segmentation electrode, the Nth-level segmentation electrode and the first insulating edge in the same direction.

Specifically, the nth-level split electrode of the second metallized electrode and the first-level split electrode of the first metallized electrode, the nth-1-level split electrode of the second metallized electrode and the second-level split electrode of the first metallized electrode are at least partially overlapped in a plan view state sequentially until the first-level split electrode of the second metallized electrode and the nth-level split electrode of the first metallized electrode are overlapped.

Specifically, a first film surface of the dielectric film is covered with two groups of the first metallized electrodes; two groups of second metallized electrodes are covered on the second film surface of the dielectric film; the two groups of first metallized electrodes are arranged in a mirror symmetry mode, and the two groups of second metallized electrodes are arranged in a mirror symmetry mode.

In order to achieve the above object, a metallized isolation film capacitor according to a third aspect of the present invention includes the above metallized isolation film set.

Drawings

FIG. 1 is a cross-sectional view of a first embodiment of the present invention;

FIG. 2 is a plan view of a first embodiment of the present invention;

FIG. 3 is an enlarged view of a portion of FIG. 2;

FIG. 4 is a plan view of another structure according to an embodiment of the present invention;

FIG. 5 is an enlarged view of a portion of FIG. 4;

FIG. 6 is a plan view of a tertiary structure according to an embodiment of the present invention;

FIG. 7 is an enlarged view of a portion of FIG. 6;

FIG. 8 is a plan view of a second embodiment according to the present invention;

FIG. 9 is an enlarged view of a portion of FIG. 8;

FIG. 10 is a plan view of a third embodiment according to the present invention;

FIG. 11 is an enlarged view of a portion of FIG. 10;

FIG. 12 is a cross-sectional view of a fourth embodiment in accordance with the present invention;

FIG. 13 is a plan view of a fourth embodiment in accordance with the present invention;

FIG. 14 is a cross-sectional view of another structure according to an embodiment of the present invention.

Description of the reference symbols

First metallized separator 1 first metallized electrode 11

Longitudinal first insulating gap 111 non-split electrode 112

Metallized isolation cell 113 first split electrode 1131

Second split electrode 1132 third split electrode 1133

First insulating edge 114 first stage fuse 115

Transverse first insulating gap 116 and longitudinal second insulating gap 117

Second stage fuse 1181 third stage fuse 1182

Transverse second insulating gap 119 dielectric film 12

Second metallized separator 2 second metallized electrode 21

Non-split electrode 211 second insulating edge 212

And (4) staggering L.

Detailed Description

Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below with reference to the drawings are illustrative and intended to be illustrative of the invention and are not to be construed as limiting the invention.

The invention defines the longitudinal direction along the length direction of the metallized isolating film and the transverse direction along the width direction of the metallized isolating film.

The invention provides a metallized isolating membrane, which comprises a dielectric film and a metallized electrode; the metalized electrodes cover the dielectric film, a first insulating edge is reserved on the dielectric film, the first insulating edge is close to the metalized isolation units, the metalized electrodes are divided into non-split electrodes and metalized isolation units which are continuously repeated along the longitudinal direction through a longitudinal first insulating gap, each metalized isolation unit is connected with the non-split electrodes through a first-stage fuse, and adjacent metalized isolation units are separated through a transverse first insulating gap; the metallization isolation unit is divided into N levels of segmentation electrodes through a longitudinal second insulation gap, N is a natural number larger than or equal to 2, the first level segmentation electrode is connected with the non-segmentation electrode through the first level fuse, the first level segmentation electrode is connected with the second level segmentation electrode through the second level fuse, the second level segmentation electrode is connected with the third level segmentation electrode through the third level fuse, in turn, the (N-1) level segmentation electrode is connected with the Nth level segmentation electrode through the Nth level fuse, and the first level segmentation electrode to the Nth level segmentation electrode are respectively formed by at least one single grid electrode; the equivalent resistance of the parallel connection of the Nth-level fuses correspondingly connected with the single grid electrode of the Nth-level segmentation electrode is larger than the equivalent resistance of the parallel connection of the N-1-level fuses correspondingly connected with the single grid electrode of the N-1-level segmentation electrode.

When the electric weak point breakdown occurs, the fuse correspondingly connected with the single grid electrode where the breakdown point is located is fused, the corresponding single grid electrode is isolated in an insulating mode, and the fuse is more easily fused as the equivalent resistance of the fuse correspondingly connected with the single grid electrode which is farther away from the non-divided electrode is larger after the fuse is connected in parallel, so that the working safety of the metallized isolation film capacitor is ensured when the breakdown point occurs on the single grid electrode which is farther away from the non-divided electrode. Meanwhile, adjacent metalized isolation units are separated by the transverse first insulation gap, so that even if a certain metalized isolation unit is isolated by electric weak point breakdown, the normal work of other metalized isolation units is not influenced. Therefore, when the electric weak point breakdown of a certain part of the metalized electrodes in the metalized isolation film occurs, the area of the metalized electrodes needing to be isolated is reduced, the part of the metalized electrodes can be effectively isolated, the normal work of the metalized isolation film is not influenced, and the working life is prolonged under the condition of ensuring the safety of the metalized isolation film.

In order to better understand the above technical solutions, exemplary embodiments of the present invention will be described in more detail below with reference to the accompanying drawings. While exemplary embodiments of the invention are shown in the drawings, it should be understood that the invention can be embodied in various forms and should not be limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art.

In order to better understand the technical solution, the technical solution will be described in detail with reference to the drawings and the specific embodiments.

Example one

Fig. 1 to 7 are schematic structural diagrams of a metallized isolating film capacitor according to an embodiment of the invention, in which the metallized isolating film capacitor is formed by rolling a first metallized isolating film 1 and a second metallized isolating film 2 in a staggered manner, and the first metallized isolating film 1 and the second metallized isolating film 2 are arranged in a staggered manner to form a staggered edge L in a top view.

The first metalized isolation film 1 is formed by covering a first metalized electrode 11 on a first film surface of a dielectric film 12, a first insulation edge 114 is reserved on the first film surface of the dielectric film 12, the first metalized electrode 11 is divided into a non-divided electrode 112 and metalized isolation units 113 which are continuously repeated along the longitudinal direction by a longitudinal first insulation gap 111, the first insulation edge 114 is adjacent to the metalized isolation units 113 and is positioned on one side opposite to the non-divided electrode 112, each metalized isolation unit 113 is connected with the non-divided electrode 112 through a first-stage fuse 115, and adjacent metalized isolation units 113 are separated through a transverse first insulation gap 116; the metallized isolation unit 113 is divided into N-level segmentation electrodes through a longitudinal second insulation gap 117, N is a natural number not less than 2, the first-level segmentation electrode is connected with the non-segmentation electrode 112 through a first-level fuse 115, the first-level segmentation electrode is connected with the second-level segmentation electrode through a second-level fuse, the second-level segmentation electrode is connected with the third-level segmentation electrode through a third-level fuse, in turn, the N-1-level segmentation electrode is connected with the N-level segmentation electrode through an N-level fuse, the first-level segmentation electrode is adjacent to the non-segmentation electrode 112, the N-level segmentation electrode is adjacent to the first insulation edge 114, and the first-level segmentation electrode to the N-level segmentation electrode are respectively formed by at least one single grid electrode; the equivalent resistance of the parallel connection of the Nth-level fuses correspondingly connected with the single grid electrode of the Nth-level segmentation electrode is larger than the equivalent resistance of the parallel connection of the N-1-level fuses correspondingly connected with the single grid electrode of the N-1-level segmentation electrode.

The second metallized spacer 2 is formed by covering the second film surface of the dielectric film 12 with the second metallized electrode 21, and a second insulating margin 212 is reserved on the second film surface of the dielectric film 12, the second metallized spacer 2 is laminated with the first metallized spacer 1 and staggered to form a staggered edge L, and the projection of the non-split electrode 211 of the second metallized spacer 2 and the projection of the non-split electrode 112 of the first metallized spacer 1 in a plan view state are independent from each other, that is, the non-split electrode 211 of the second metallized spacer 2 and the non-split electrode 112 of the first metallized spacer 1 do not intersect in the plan view state.

Optionally, the second metallized electrode 21 has the same structure as the first metallized electrode 11, the second metallized electrode is divided into a non-divided electrode 112 and metallized isolation units 113 continuously repeated along the longitudinal direction by a longitudinal first insulation gap 111, each metallized isolation unit 113 is connected with the non-divided electrode 112 by a first-stage fuse 115, and adjacent metallized isolation units 113 are separated by a transverse first insulation gap 116; the metallized isolation unit 113 is divided into N-level segmentation electrodes through a longitudinal second insulation gap 117, N is a natural number not less than 2, the first-level segmentation electrode is connected with the non-segmentation electrode 112 through a first-level fuse 115, the first-level segmentation electrode is connected with the second-level segmentation electrode through a second-level fuse, the second-level segmentation electrode is connected with the third-level segmentation electrode through a third-level fuse, in turn, the (N-1) -level segmentation electrode is connected with the N-level segmentation electrode through an N-level fuse, the first-level segmentation electrode is adjacent to the non-segmentation electrode 112, and the first-level segmentation electrode to the N-level segmentation electrode are respectively formed by at least one single grid electrode; the equivalent resistance of the parallel connection of the Nth-level fuses correspondingly connected with the single grid electrode of the Nth-level segmentation electrode is larger than the equivalent resistance of the parallel connection of the N-1-level fuses correspondingly connected with the single grid electrode of the N-1-level segmentation electrode. The nth split electrode of the second metallized electrode 21 and the first split electrode of the first metallized electrode 11, the nth-1 th split electrode of the second metallized electrode 21 and the second split electrode of the second metallized electrode 21 are at least partially overlapped in a plan view state sequentially until the first split electrode of the second metallized electrode 21 and the nth split electrode of the second metallized electrode 21 are overlapped.

As shown in fig. 2 and 3, the metallized isolation unit 113 of the first metallized isolation film 1 is divided into two-stage split electrodes, i.e., a first split electrode 1131 and a second split electrode 1132 by the longitudinal second insulation gap 117, and the area of the single grid electrode of the second-stage split electrode 1132 is smaller than that of the single grid electrode of the first-stage split electrode 1131. Correspondingly, the metallization isolation unit of the second metallization isolation film 2 is divided into two stages of divided electrodes through a longitudinal second insulation gap; when the second metallized spacer film 2 is sequentially disposed as the non-divided electrode 211, the first-stage divided electrode, the second-stage divided electrode, and the second insulating edge 212, the corresponding first metallized spacer film 1 is sequentially disposed as the first insulating edge 114, the second-stage divided electrode, the first-stage divided electrode, and the non-divided electrode 112 in the same direction. The second split electrode of the second metallized electrode 21 and the first split electrode of the first metallized electrode 11, and the first split electrode of the second metallized electrode 21 and the 2 nd split electrode of the second metallized electrode 21 at least partially overlap in plan view.

The first split electrode 1131 and the second split electrode 1132 are connected to each other by a second stage fuse 1181, the first stage split electrode 1131 is provided adjacent to the non-split electrode 112, the second stage split electrode 1132 is provided adjacent to the first insulating edge 114, and the second stage split electrodes 1132 are separated by a transverse second insulating gap 119.

In the first metalized isolation film 1 and the second metalized isolation film 2, the number of single grid electrodes of the second-stage division electrode is greater than that of single grid electrodes of the first-stage division electrode, and the equivalent resistance of the parallel connection of the second-stage fuses 1181 correspondingly connected with the single grid electrodes of the second-stage division electrode is greater than that of the parallel connection of the first-stage fuses 115 correspondingly connected with the single grid electrodes of the first-stage division electrode.

When the first metallized spacer 1 and the second metallized spacer 2 are provided as two-stage divided electrodes, the ratio of the width of the first-stage divided electrode 1131 in the lateral direction to the width of the metallized spacer 113 in the lateral direction is not more than 1/2, and misalignment L occurs between the two metallized films.

When the first metallized isolation film 1 and the second metallized isolation film 2 are provided as two-stage split electrodes, it is ensured that the first-stage split electrode 1131 of the first metallized isolation film 1 corresponds to the second-stage split electrode of the second metallized isolation film 2. When a severe or extreme breakdown of an electrical weak point occurs in the region where the first-stage split electrode 1131 of the first metalized isolation film 1 is located, the current passing through the fuse is large, and the second-stage split electrode of the second metalized isolation film 2 is more sensitive to current impact and is more quickly disconnected, so that the second-stage split electrode of the second metalized isolation film 2 is insulated and isolated; at this time, the first stage fuse 115 connecting the first stage divided electrode 1131 of the first metalized isolation film 1 and the non-divided electrode 112 is isolated and isolated from the current surge due to the electric weak point region, and is not disconnected, the capacitor only loses the capacitance formed by the second stage divided electrode part of the second metalized isolation film 2, and the first stage divided electrode 1131 of the first metalized isolation film 1 recovers the normal operation, and the capacity loss is less than that when the first stage fuse 115 is completely disconnected, so that the working life and the working stability of the capacitor are further improved on the premise of ensuring the working safety of the capacitor.

When the first-stage split electrode 1131 and the second-stage split electrode 1132 of the first metalized isolation film 1 are subjected to normal self-healing, the current passing through the first-stage fuse 115 or the second-stage fuse 1181 is small, the first-stage fuse 115 and the second-stage fuse 1181 cannot be disconnected, and the normal operation of the capacitor is not affected.

When the first-stage segmented electrode 1131 is subjected to severe electric weak point breakdown, the current passing through the first-stage fuse 115 is large, the first-stage fuse 115 is broken by current impact, or the fuse of the segmented electrode of the second metalized isolation film 2 corresponding to the electric weak point is broken by current impact, and the first-stage segmented electrode 1131 where the electric weak point is located or the segmented electrode where the second metalized isolation film 2 corresponding to the electric weak point is located is isolated by insulation, so that the working safety of the capacitor is ensured.

When the second-stage split electrode 1132 is subjected to severe electric weak point breakdown, the current passing through the second-stage fuse 1181 is large, the second-stage fuse 1181 is more sensitive to current impact and is disconnected more quickly, and the second-stage split electrode 1132 where the electric weak point is located is insulated and isolated; at this time, the first stage fuse 115 connecting the first stage divided electrode 1131 and the non-divided electrode 112 of the first metallized separation film 1 is isolated from the current surge due to the electric weak point region, and is not broken, and the capacitor only loses the capacitance formed by the second stage divided electrode 1132, and the capacitance loss is negligible, and the working safety of the capacitor is ensured.

When the first-stage split electrode 1131 or the second-stage split electrode 1132 is subjected to extreme electric weak point breakdown, the currents passing through the first-stage fuse 115 and the second-stage fuse 1181 are large, the first-stage fuse 115 and the second-stage fuse 1181 are all disconnected, the metalized isolation unit 113 is isolated by insulation, and the safety of the capacitor under an abnormal working condition is guaranteed.

As shown in fig. 6 and 7, the metallized isolation unit 113 of the first metallized isolation film 1 is divided into three-stage divided electrodes, i.e., a first divided electrode 1131, a second divided electrode 1132 and a third divided electrode 1133, by the longitudinal second insulation gap 117, the area of the single grid electrode of the second-stage divided electrode 1132 is smaller than that of the first-stage divided electrode 1131, and the area of the single grid electrode of the third-stage divided electrode 1133 is smaller than that of the second-stage divided electrode 1132. Correspondingly, the metallized isolation unit 21 of the second metallized isolation film 2 is separated into three-stage split electrodes through a longitudinal second insulation gap; when the second metallized spacer film 2 is sequentially arranged as the non-divided electrode 211, the first-stage divided electrode, the second-stage divided electrode, the third-stage divided electrode, and the second insulating edge 212, the corresponding first metallized spacer film 1 is sequentially arranged as the first insulating edge 114, the third-stage divided electrode, the second-stage divided electrode, the first-stage divided electrode, and the non-divided electrode 112 in the same direction. The third split electrode of the second metallized electrode 21 and the first split electrode of the first metallized electrode 11, the second split electrode of the second metallized electrode 21 and the second split electrode of the second metallized electrode 21, and the first split electrode of the second metallized electrode 21 and the third split electrode of the second metallized electrode 21 are at least partially overlapped in plan view.

The first divided electrode 1131 and the second divided electrode 1132 are connected to each other by a second stage fuse 1181, the second divided electrode 1132 and the third divided electrode 1133 are connected to each other by a third stage fuse 1182, the first stage divided electrode 1131 is adjacent to the non-divided electrode 112, the third stage divided electrode 1132 is adjacent to the first insulating edge 114, and the second stage divided electrode 1132 and the third divided electrode 1133 are separated by a transverse second insulating gap 119. In first metallized isolation film 1 and second metallized isolation film 2, the number of individual mesh electrodes of third-stage divided electrode 1133 is greater than the number of individual mesh electrodes of second-stage divided electrode 1132, and the number of individual mesh electrodes of second-stage divided electrode 1132 is greater than the number of individual mesh electrodes of first-stage divided electrode 1131.

The equivalent resistance of the parallel connection of the third stage fuses 1182 correspondingly connected to the single grid electrode of the third stage divided electrode 1133 is greater than the equivalent resistance of the parallel connection of the second stage fuses 1181 correspondingly connected to the single grid electrode of the second stage divided electrode 1132, and the equivalent resistance of the parallel connection of the second stage fuses 1181 correspondingly connected to the single grid electrode of the second stage divided electrode 1132 is greater than the equivalent resistance of the parallel connection of the first stage fuses 115 correspondingly connected to the single grid electrode of the first stage divided electrode 1131.

When a severe or extreme breakdown of an electrical weak point occurs in the region where the first-stage split electrode 1131 of the first metalized isolation film 1 is located, the current passing through the fuse is large, and the third-stage split electrode of the second metalized isolation film 2 is more sensitive to current impact and is more quickly disconnected, so that the third-stage split electrode of the second metalized isolation film 2 is insulated and isolated; at this time, the first stage fuse 115 connecting between the first stage divided electrode 1131 of the first metalized isolation film 1 and the non-divided electrode 112 is isolated and isolated from the current surge due to the electrical weak point region, and is not disconnected, the capacitor only loses the capacitance formed by the third stage divided electrode portion of the second metalized isolation film 2, and the first stage divided electrode 1131 of the first metalized isolation film 1 returns to normal operation, so that the working life and the working stability of the capacitor are further improved on the premise of ensuring the working safety of the capacitor.

The individual mesh electrodes of the first-stage split electrode 1131 and the second-stage split electrode 1132 may be arranged in a parallelogram or a rectangle, or may be arranged in another shape such as a triangle. The first metallized electrode 11 and the second metallized electrode 21 can be made of aluminum or zinc-aluminum composite material, and can also be made of other metal materials.

The first metallized isolation film 1 and the second metallized isolation film 2 are arranged in a staggered mode in a plan view state to form staggered edges, the width of the non-split electrode 112 of the first metallized electrode 11 in the transverse direction does not exceed the sum of the width of the second insulating edge 212 of the second metallized isolation film 2 in the transverse direction and the width of the staggered edges in the transverse direction, and is usually less than or equal to 5mm, namely the non-split electrode 112 does not participate in the capacitance structure, and the region of the non-split electrode of the second metallized isolation film 2 participating in the capacitance structure is ensured to completely correspond to the split electrode of the first metallized isolation film 1.

The equivalent resistance value of the first-stage fuse 115 connected between the metalized isolation unit 113 and the non-divided electrode 112 in parallel is smaller than that of the second-stage fuse 1181 connected between the first divided electrode and the second divided electrode in parallel, the second-stage fuse 1181 is more sensitive to current impact than the first-stage fuse 115, and when the impact current reaches a certain value, the fuse is instantly heated and gasified to be disconnected.

Second-stage split electrodes 1132 are separated by transverse second insulating gaps 119 to form different numbers of mesh electrodes, as shown in fig. 2 and 3, the number of mesh electrodes may be two, that is, the ratio of the number of mesh electrodes of first-stage split electrode 1131 to the number of mesh electrodes of second-stage split electrodes 1132 is 1: 2; as shown in fig. 4 and 5, the number of mesh electrodes may be three, that is, the ratio of the number of mesh electrodes of first-stage split electrode 1131 to the number of mesh electrodes of second-stage split electrode 1132 is 1: 3. The ratio of the number of mesh electrodes of first-stage split electrode 1131 to the number of mesh electrodes of second-stage split electrode 1132 is determined by the operating voltage.

Example two

Fig. 1, fig. 8 and fig. 9 are schematic structural diagrams of a metallized isolating film capacitor according to a second embodiment of the invention, the metallized isolating film capacitor is formed by rolling a first metallized isolating film 1 and a second metallized isolating film 2 in a staggered manner, and the first metallized isolating film 1 and the second metallized isolating film 2 are arranged in a staggered manner to form a staggered edge L in a top view state.

The first metalized isolation film 1 is formed by covering a first metalized electrode 11 on a first film surface of a dielectric film 12, a first insulation edge 114 is reserved on the first film surface of the dielectric film 12, the first metalized electrode 11 is divided into a non-divided electrode 112 and metalized isolation units 113 which are continuously repeated along the longitudinal direction by a longitudinal first insulation gap 111, the first insulation edge 114 is adjacent to the metalized isolation units 113 and is positioned on one side opposite to the non-divided electrode 112, each metalized isolation unit 113 is connected with the non-divided electrode 112 through a first-stage fuse 115, and adjacent metalized isolation units 113 are separated through a transverse first insulation gap 116; the metallized isolation unit 113 is divided into N-level segmentation electrodes through a longitudinal second insulation gap 117, N is a natural number not less than 2, the first-level segmentation electrode is connected with the non-segmentation electrode 112 through a first-level fuse 115, the first-level segmentation electrode is connected with the second-level segmentation electrode through a second-level fuse, the second-level segmentation electrode is connected with the third-level segmentation electrode through a third-level fuse, in turn, the N-1-level segmentation electrode is connected with the N-level segmentation electrode through an N-level fuse, the first-level segmentation electrode is adjacent to the non-segmentation electrode 112, the N-level segmentation electrode is adjacent to the first insulation edge 114, and the first-level segmentation electrode to the N-level segmentation electrode are respectively formed by at least one single grid electrode; the equivalent resistance of the parallel connection of the Nth-level fuses correspondingly connected with the single grid electrode of the Nth-level segmentation electrode is larger than the equivalent resistance of the parallel connection of the N-1-level fuses correspondingly connected with the single grid electrode of the N-1-level segmentation electrode.

In this embodiment, the metallization isolation unit 113 is separated into two-stage split electrodes, that is, a first split electrode 1131 and a second split electrode 1132, by a longitudinal second insulation gap 117, an area of a single grid electrode of the second-stage split electrode 1132 is smaller than an area of a single grid electrode of the first-stage split electrode 1131, the first split electrode 1131 and the second split electrode 1132 are connected by a second-stage fuse 1181, the first-stage split electrode 1131 is adjacent to the non-split electrode 112, the second-stage split electrode 1132 is adjacent to the first insulation edge 114, and the second-stage split electrode 1132 is separated by a transverse second insulation gap 119. The equivalent resistance of the parallel connection of the second-stage fuses 1181 correspondingly connected to the single grid electrode of the second-stage divided electrode is larger than the equivalent resistance of the parallel connection of the first-stage fuses 115 correspondingly connected to the single grid electrode of the first-stage divided electrode.

The second metallized spacer 2 is formed by covering the second metallized electrode 21 on the second film surface of the dielectric film 12, and a second insulating margin 212 is reserved on the second film surface of the dielectric film 12. in this embodiment, the second metallized electrode 21 is a non-divided electrode 211, and is not divided into divided electrodes at all levels. When the first metallized spacers 1 are sequentially disposed as the non-split electrode 112, the first-level split electrode to the Nth-level split electrode, and the first insulating edge 114, the corresponding second metallized spacers 2 are sequentially disposed with the second insulating edge 212 and the non-split electrode 211 in the same direction. The film width of the second metalized isolation film 2 is the same as that of the first metalized isolation film 1, and the width of the second insulating edge 212 of the second metalized electrode 21 is the same as that of the first insulating edge 114 of the first metalized electrode 11. The second metallized isolation film 2 is partially overlapped with the first metallized isolation film 1 in a plan view state.

In this embodiment, the first metalized isolation film 1 is configured as a two-stage split electrode, when the area where the second split electrode 1132 of the first metalized isolation film 1 is located is seriously damaged or broken down due to an extreme weak electrical point, the current passing through the fuse is large, the fuse correspondingly connected to the single grid electrode of the second split electrode 1132 is fused, and the second split electrode 1132 is isolated in an insulated manner, so that the capacity loss is small, and the safety of the metalized isolation film capacitor in working is ensured.

The individual mesh electrodes of the first-stage split electrode 1131 and the second-stage split electrode 1132 may be arranged in a parallelogram or a rectangle, or may be arranged in another shape such as a triangle. The first metallized electrode 11 and the second metallized electrode 21 can be made of aluminum or zinc-aluminum composite material, and can also be made of other metal materials.

The first metallized isolation film 1 and the second metallized isolation film 2 are arranged in a staggered mode in a plan view state to form staggered edges, the width of the non-split electrode 112 of the first metallized electrode 11 in the transverse direction does not exceed the sum of the width of the second insulating edge 212 of the second metallized isolation film 2 in the transverse direction and the width of the staggered edges in the transverse direction, and is usually less than or equal to 5mm, namely the non-split electrode 112 does not participate in capacitance formation, and the region of the non-split electrode 211 of the second metallized isolation film 2 participating in capacitance formation is ensured to completely correspond to the split electrode of the first metallized isolation film 1.

The equivalent resistance value of the first-stage fuse 115 connected between the metalized isolation unit 113 and the non-segmented electrode 112 in parallel is smaller than that of the second-stage fuse 1181 connected between the single grid electrodes of the first segmented electrode and the second segmented electrode in parallel, the second-stage fuse 1181 is more sensitive to current impact than the first-stage fuse 115, and when the impact current reaches a certain value, the fuse is instantly heated and gasified to be disconnected.

When the first-stage split electrode 1131, the second-stage split electrode 1132 or the non-split electrode 211 of the first metalized isolation film 1 or the second metalized isolation film 2 are subjected to normal self-healing, the current passing through the first-stage fuse 115 or the second-stage fuse 1181 is small, the first-stage fuse 115 and the second-stage fuse 1181 cannot be disconnected, and the normal operation of the capacitor is not influenced.

When the first-stage segmented electrode 1131 has a severe or extreme breakdown of an electrical weak point, the current passing through the first-stage fuse 115 is large, the first-stage fuse 115 is broken by current impact, and the first-stage segmented electrode 1131 with the electrical weak point is isolated, so that the working safety of the capacitor is ensured.

When the second-stage split electrode 1132 is subjected to severe or extreme breakdown of an electrical weak point, the current passing through the second-stage fuse 1181 is large, the second-stage fuse 1181 is broken by current impact, and the second-stage split electrode 1132 where the electrical weak point is located is insulated and isolated; at this time, the first stage fuse 115 connecting the first stage divided electrode 1131 and the non-divided electrode 112 of the first metallized separation film 1 is isolated from the current surge due to the electric weak point region, and is not broken, and the capacitor only loses the capacitance formed by the second stage divided electrode 1132, and the capacitance loss is negligible, and the working safety of the capacitor is ensured.

When the non-divided electrode 211 of the second metalized isolation film 2 has a serious or extreme breakdown of an electrical weak point, the current passing through the first-stage fuse 115 and the second-stage fuse 1181 is large, no matter whether the non-divided electrode 211 of the second metalized isolation film 2 corresponds to the first-stage divided electrode 1131 or the second-stage divided electrode 1132 of the first metalized isolation film 1, the corresponding first-stage fuse 115 and the second-stage fuse 1181 are broken by current impact, and the first-stage divided electrode 1131 or the second-stage divided electrode 1132 of the first metalized isolation film 1 corresponding to the area of the electrical weak point is insulated and isolated, so that the working safety of the capacitor is ensured.

The second embodiment is different from the first embodiment in that the second metallized electrode 21 is a non-divided electrode 211, and divided electrodes are not divided. The film width of the second metalized isolation film 2 is the same as that of the first metalized isolation film 1, and the width of the second insulating edge 212 of the second metalized electrode 21 is the same as that of the first insulating edge 114 of the first metalized electrode 11. The second metallized isolation film 2 is partially overlapped with the first metallized isolation film 1 in a plan view state.

EXAMPLE III

Fig. 1, 10 to 11 are schematic structural diagrams of a metallized isolating film capacitor according to a third embodiment of the present invention, in which the metallized isolating film capacitor is formed by rolling a first metallized isolating film 1 and a second metallized isolating film 2 in a staggered manner, and the first metallized isolating film 1 and the second metallized isolating film 2 are arranged in a staggered manner in a top view to form a staggered edge L.

The first metalized isolation film 1 is formed by covering a first metalized electrode 11 on a first film surface of a dielectric film 12, a first insulation edge 114 is reserved on the first film surface of the dielectric film 12, the first metalized electrode 11 is divided into a non-divided electrode 112 and metalized isolation units 113 which are continuously repeated along the longitudinal direction by a longitudinal first insulation gap 111, the first insulation edge 114 is adjacent to the metalized isolation units 113 and is positioned on one side opposite to the non-divided electrode 112, each metalized isolation unit 113 is connected with the non-divided electrode 112 through a first-stage fuse 115, and adjacent metalized isolation units 113 are separated through a transverse first insulation gap 116; the metallized isolation unit 113 is divided into N-level segmentation electrodes through a longitudinal second insulation gap 117, N is a natural number not less than 2, the first-level segmentation electrode is connected with the non-segmentation electrode 112 through a first-level fuse 115, the first-level segmentation electrode is connected with the second-level segmentation electrode through a second-level fuse, the second-level segmentation electrode is connected with the third-level segmentation electrode through a third-level fuse, in turn, the N-1-level segmentation electrode is connected with the N-level segmentation electrode through an N-level fuse, the first-level segmentation electrode is adjacent to the non-segmentation electrode 112, the N-level segmentation electrode is adjacent to the first insulation edge 114, and the first-level segmentation electrode to the N-level segmentation electrode are respectively formed by at least one single grid electrode; the equivalent resistance of the parallel connection of the Nth-level fuses correspondingly connected with the single grid electrode of the Nth-level segmentation electrode is larger than the equivalent resistance of the parallel connection of the N-1-level fuses correspondingly connected with the single grid electrode of the N-1-level segmentation electrode.

The second metallized spacer 2 is formed by covering the second film surface of the dielectric film 12 with the second metallized electrode 21, and a second insulating margin 212 is reserved on the second film surface of the dielectric film 12, the second metallized spacer 2 is laminated with the first metallized spacer 1 and staggered to form a staggered edge L, and the projection of the non-split electrode 211 of the second metallized spacer 2 and the projection of the non-split electrode 112 of the first metallized spacer 1 in a plan view state are independent from each other, that is, the non-split electrode 211 of the second metallized spacer 2 and the non-split electrode 112 of the first metallized spacer 1 do not intersect in the plan view state. The second metallized electrode 21 has the same structure as the first metallized electrode 11, the width value of the non-split electrode 112 of the first metallized isolation film 1 in the transverse direction is larger than the sum of the width value of the second insulating edge 212 of the second metallized isolation film 2 in the transverse direction and the width value of the staggered edge in the transverse direction, and is usually larger than 5mm, namely the non-split electrode 112 of the first metallized isolation film 1 participates in the formation of capacitance; and the ratio of the width value of the non-divided electrode 112 of the first metalized isolation film 1 in the transverse direction to the width value of the first metalized isolation film 1 in the transverse direction is less than 1/2, so that the region formed by capacitance of the non-divided electrode of one film completely corresponds to the divided electrode of the other film, and when the ratio is equal to 1/2, the two films are staggered and rolled to form a staggered edge, so that the non-divided electrodes of the two metalized films do not correspond to each other.

When the first-stage split electrode 1131 and the second-stage split electrode 1132 of the first metalized isolation film 1 are subjected to normal self-healing, the current passing through the first-stage fuse 115 or the second-stage fuse 1181 is small, the first-stage fuse 115 and the second-stage fuse 1181 cannot be disconnected, and the normal operation of the capacitor is not affected.

When the first-stage segmented electrode 1131 has a severe or extreme breakdown of an electrical weak point, the current passing through the first-stage fuse 115 is large, the first-stage fuse 115 is broken by current impact, or the fuse of the segmented electrode of the second metalized isolation film 2 corresponding to the electrical weak point is broken by current impact, and the segmented electrode of the first-stage segmented electrode 1131 where the electrical weak point is located or the segmented electrode of the second metalized isolation film 2 corresponding to the electrical weak point is located is isolated by insulation, so that the working safety of the capacitor is ensured.

When the second-stage split electrode 1132 is subjected to severe or extreme breakdown of an electrical weak point, the current passing through the second-stage fuse 1181 is large, the second-stage fuse 1181 is more sensitive to current impact and is disconnected more quickly, and the second-stage split electrode 1132 where the electrical weak point is located is insulated and isolated; at this time, the first stage fuse 115 connecting the first stage divided electrode 1131 and the non-divided electrode 112 of the first metallized separation film 1 is isolated from the current surge due to the electric weak point region, and is not broken, and the capacitor only loses the capacitance formed by the second stage divided electrode 1132, and the capacitance loss is negligible, and the working safety of the capacitor is ensured.

The individual mesh electrodes of the first-stage split electrode 1131 and the second-stage split electrode 1132 may be arranged in a parallelogram or a rectangle, or may be arranged in another shape such as a triangle. The first metallized electrode 11 and the second metallized electrode 21 can be made of aluminum or zinc-aluminum composite material, and can also be made of other metal materials.

The equivalent resistance value of the first-stage fuse 115 connected between the single grid electrode of the metalized isolation unit 113 and the non-divided electrode 112 in parallel is smaller than the equivalent resistance value of the second-stage fuse 1181 connected between the single grid electrode of the first divided electrode and the second divided electrode in parallel, the second-stage fuse 1181 is more sensitive to current impact than the first-stage fuse 115, and when the impact current reaches a certain value, the fuse is instantly heated and gasified to be disconnected.

Example four

Fig. 12 to 14 are schematic structural diagrams of a metallized isolating film capacitor according to a fourth embodiment of the present invention, in which the metallized isolating film capacitor is formed by rolling a first metallized isolating film 1 and a second metallized isolating film 2 in a staggered manner, and the first metallized isolating film 1 and the second metallized isolating film 2 are arranged in a staggered manner to form a staggered edge L in a top view.

The first metalized isolation film 1 is formed by covering a first metalized electrode 11 on a first film surface of a dielectric film 12, a first insulation edge 114 is reserved on the first film surface of the dielectric film 12, the first metalized electrode 11 is divided into a non-divided electrode 112 and metalized isolation units 113 which are continuously repeated along the longitudinal direction by a longitudinal first insulation gap 111, the first insulation edge 114 is adjacent to the metalized isolation units 113 and is positioned on one side opposite to the non-divided electrode 112, each metalized isolation unit 113 is connected with the non-divided electrode 112 through a first-stage fuse 115, and adjacent metalized isolation units 113 are separated through a transverse first insulation gap 116; the metallized isolation unit 113 is divided into N-level segmentation electrodes through a longitudinal second insulation gap 117, N is a natural number not less than 2, the first-level segmentation electrode is connected with the non-segmentation electrode 112 through a first-level fuse 115, the first-level segmentation electrode is connected with the second-level segmentation electrode through a second-level fuse, the second-level segmentation electrode is connected with the third-level segmentation electrode through a third-level fuse, in turn, the N-1-level segmentation electrode is connected with the N-level segmentation electrode through an N-level fuse, the first-level segmentation electrode is adjacent to the non-segmentation electrode 112, the N-level segmentation electrode is adjacent to the first insulation edge 114, and the first-level segmentation electrode to the N-level segmentation electrode are respectively formed by at least one single grid electrode; the equivalent resistance of the parallel connection of the Nth-level fuses correspondingly connected with the single grid electrode of the Nth-level segmentation electrode is larger than the equivalent resistance of the parallel connection of the N-1-level fuses correspondingly connected with the single grid electrode of the N-1-level segmentation electrode.

The second metallized spacer 2 is formed by covering the second film surface of the dielectric film 12 with the second metallized electrode 21, and a second insulating margin 212 is reserved on the second film surface of the dielectric film 12, the second metallized spacer 2 is laminated with the first metallized spacer 1 and staggered to form a staggered edge L, and the projection of the non-split electrode 211 of the second metallized spacer 2 and the projection of the non-split electrode 112 of the first metallized spacer 1 in a plan view state are independent from each other, that is, the non-split electrode 211 of the second metallized spacer 2 and the non-split electrode 112 of the first metallized spacer 1 do not intersect in the plan view state.

In this embodiment, at least two sets of the first metallized electrodes 11 are covered on the first film surface of the dielectric thin film 12; at least two groups of second metallized electrodes 21 are covered on the second film surface of the dielectric film 12; when the second metallized isolation film 2 is sequentially laid out with the second insulating edge 212, the nth-level divided electrode to the first-level divided electrode, and the non-divided electrode 211, the corresponding first metallized isolation film 1 is sequentially laid out with the non-divided electrode 112, the first-level divided electrode to the nth-level divided electrode, and the first insulating edge 114 in the same direction.

Specifically, the nth-order split electrode of the second metallized electrode 21 and the first-order split electrode of the first metallized electrode 11, and the nth-1-order split electrode of the second metallized electrode 21 and the second-order split electrode of the first metallized electrode 11 sequentially overlap at least partially in a plan view state until the first-order split electrode of the second metallized electrode 21 and the nth-order split electrode of the first metallized electrode 11.

As shown in fig. 12 and 13, two sets of first metallized electrodes 11 are covered on the first film surface of the dielectric thin film 12; two groups of second metallized electrodes 21 are covered on the second film surface of the dielectric film 12; the two sets of first metallized electrodes 11 are arranged mirror-symmetrically and the two sets of second metallized electrodes 21 are arranged mirror-symmetrically.

Of course, as shown in fig. 14, three sets of the first metallized electrodes 11 may be covered on the first film face of the dielectric thin film 12; correspondingly, three sets of second metallized electrodes 21 are covered on the second film face of the dielectric film 12.

The ratio of the total width of the non-split electrode 112 of the first metalized isolation film 1 in the transverse direction to the width of the first metalized isolation film 1 in the transverse direction is not more than 1/2, and similarly, the ratio of the total width of the non-split electrode of the second metalized isolation film 2 in the transverse direction to the width of the second metalized isolation film 2 in the transverse direction is not more than 1/2, so that the region of one film where the non-split electrode participates in capacitance formation is ensured not to correspond to the non-split electrode of the other film. When the non-divided electrode does not participate in the capacitance formation, the divided electrodes of the two films correspond to each other; when the non-divided electrode participates in the capacitance formation but the width ratio in the transverse direction is less than 1/2, the non-divided electrode of one film corresponds to the divided electrode of the other film; when the width ratio of the non-split electrodes of the two metallized films in the transverse direction reaches 1/2, the non-split electrodes of one metallized film correspond to the split electrodes of the other metallized film because the two metallized films are staggered and rolled to form staggered edges.

The equivalent resistance value of the first-stage fuse 115 connected between the single grid electrode of the metalized isolation unit 113 and the non-divided electrode 112 in parallel is smaller than the equivalent resistance value of the second-stage fuse 1181 connected between the single grid electrode of the first divided electrode and the single grid electrode of the second divided electrode in parallel, the second-stage fuse 1181 is more sensitive to current impact than the first-stage fuse 115, and when the impact current reaches a certain value, the fuse is instantly heated and gasified to be disconnected.

When the first-stage split electrode 1131 and the second-stage split electrode 1132 of the first metalized isolation film 1 are subjected to normal self-healing, the current passing through the first-stage fuse 115 or the second-stage fuse 1181 is small, the first-stage fuse 115 and the second-stage fuse 1181 cannot be disconnected, and the normal operation of the capacitor is not affected. Similarly, when the first-stage division electrode and the second-stage division electrode of the second metalized isolation film 2 are subjected to normal self-healing, the current passing through the first-stage fuse or the second-stage fuse is small, the first-stage fuse and the second-stage fuse cannot be disconnected, and the capacitor cannot be influenced during normal work.

When the non-divided electrode 112 of the first metallized isolating film 1 or the second metallized isolating film 2 has serious or extreme electric weak point breakdown, the current passing through the fuse is larger, although the non-divided electrode participates in capacitance formation, because the area of the electric weak point corresponds to the divided electrode of the other film, the fuse of each unit is broken by current impact, and the divided electrode of the other film corresponding to the area of the electric weak point is insulated and isolated, thereby ensuring the working safety of the capacitor.

When the first-stage segmented electrode 1131 of the first metalized isolation film 1 or the second metalized isolation film 2 has a severe or extreme electric weak point breakdown, and when the first-stage segmented electrode 1131 has a severe or extreme electric weak point breakdown, the current passing through the first-stage fuse 115 is relatively large, the first-stage fuse 115 is broken by current impact, and the first-stage segmented electrode 1131 where the electric weak point is located is isolated by insulation, so that the working safety of the capacitor is ensured.

When the second-stage split electrode 1132 of the first metalized isolation film 1 or the second metalized isolation film 2 has serious or extreme breakdown of an electric weak point, the current passing through the second-stage fuse 1181 is large, the second-stage fuse 1181 is more sensitive to current impact and is broken more quickly, and the second-stage split electrode 1132 where the electric weak point is located is insulated and isolated; at this time, the first stage fuse 115 connecting between the first stage divided electrode 1131 and the non-divided electrode 112 is not subjected to current surge any more because the weak point region is insulated and isolated, and is not disconnected, and the capacitor loses only the capacitance formed by the second stage divided electrode 1132, and the capacitance loss is negligible, and the operational safety of the capacitor is ensured.

When the non-divided electrodes do not participate in the capacitance formation, and the width ratio of the first-stage divided electrodes to the corresponding metallized isolation units in the transverse direction is not more than 1/2, the first-stage divided electrodes of one metallized film correspond to the second-stage divided electrodes of the other metallized film due to misalignment of the two metallized films. When the area where the first-stage segmentation electrode is located is seriously or extremely broken through an electric weak point, the current passing through the fuse is larger, and the second-stage segmentation electrode of the other metallized film is more sensitive to current impact and is cut off more quickly, so that the second-stage segmentation electrode is insulated and separated; at this time, the first stage fuse 115 connecting the first stage divided electrode and the non-divided electrode is not subjected to current surge any more because the electric weak point region is insulated and separated, and is not disconnected, the capacitor only loses the capacitance formed by the second stage divided electrode part, and the first stage divided electrode recovers to normal operation, and the capacity loss is less than that when the first stage fuse 115 is completely disconnected, so that the working life and the working stability of the capacitor are further improved on the premise of ensuring the working safety of the capacitor.

While preferred embodiments of the present invention have been described, additional variations and modifications in those embodiments may occur to those skilled in the art once they learn of the basic inventive concepts. Therefore, it is intended that the appended claims be interpreted as including preferred embodiments and all such alterations and modifications as fall within the scope of the invention.

It will be apparent to those skilled in the art that various changes and modifications may be made in the present invention without departing from the spirit and scope of the invention. Thus, if such modifications and variations of the present invention fall within the scope of the claims of the present invention and their equivalents, the present invention is also intended to include such modifications and variations.

In the description of the present invention, it is to be understood that the terms "first", "second" and the like are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implying any number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present invention, "a plurality" means two or more unless specifically defined otherwise.

In the present invention, unless otherwise expressly stated or limited, the terms "mounted," "connected," "secured," and the like are to be construed broadly and can, for example, be fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; either directly or indirectly through intervening media, either internally or in any other relationship. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.

In the present invention, unless otherwise expressly stated or limited, the first feature "on" or "under" the second feature may be directly contacting the first and second features or indirectly contacting the first and second features through an intermediate. Also, a first feature "on," "over," and "above" a second feature may be directly or diagonally above the second feature, or may simply indicate that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature may be directly under or obliquely under the first feature, or may simply mean that the first feature is at a lesser elevation than the second feature.

In the description herein, references to the description of the term "one embodiment," "some embodiments," "an example," "a specific example," or "some examples," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above should not be understood to necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, various embodiments or examples and features of different embodiments or examples described in this specification can be combined and combined by one skilled in the art without contradiction.

Although embodiments of the present invention have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting the present invention, and that variations, modifications, substitutions and alterations can be made to the above embodiments by those of ordinary skill in the art within the scope of the present invention.

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