阅读说明：本技术 具有多个栅极的x射线源 (X-ray source with multiple grids ) 是由 H·加法里 高波 M·扎扎 V·罗宾逊 C·伍德曼 于 2021-06-29 设计创作，主要内容包括：一些实施方案包括x射线源,其包括：阳极112；场致发射器104,所述场致发射器被配置成生成电子束；第一栅极106,所述第一栅极被配置成控制来自所述场致发射器104的场致发射；以及第二栅极108,所述第二栅极设置在所述第一栅极与所述阳极之间。(Some embodiments include an x-ray source comprising: an anode 112; a field emitter 104 configured to generate an electron beam; a first gate 106 configured to control field emission from the field emitter 104; and a second grid 108 disposed between the first grid and the anode.)

1. An x-ray source, comprising:

an anode;

a field emitter configured to generate an electron beam;

a first gate configured to control field emission from the field emitter;

a second gate disposed between the first gate and the anode; and

an intermediate electrode disposed between the first grid and the anode, wherein the second grid is disposed between the first grid and the intermediate electrode or between the intermediate electrode and the anode.

2. The x-ray source of claim 1, further comprising:

a voltage source configured to apply a first voltage to the first gate and a second voltage to the second gate.

3. The x-ray source of claim 2, wherein:

the first voltage and the second voltage are the same;

at least one of the first voltage and the second voltage is grounded;

the first voltage and the second voltage are different; or

The voltage source is a variable voltage source, and the variable voltage source is configured to vary at least one of the first voltage and the second voltage.

4. The x-ray source of any of claims 2 to 3, further comprising:

a third gate disposed between the first gate and the anode and at the same distance from the field emitter as the second gate;

wherein the voltage source is configured to apply a third voltage to the third gate, and the voltage source is configured to independently apply the third voltage and the second voltage.

5. The x-ray source of any of claims 1 to 3, further comprising:

a spacer disposed between the first gate and the anode;

a third gate disposed between the first gate and the anode;

wherein the second gate and the third gate are disposed on the spacer.

6. The x-ray source of claim 5, wherein:

the spacer comprises a plurality of openings;

the field emitter is one of a plurality of field emitters, each field emitter aligned with a corresponding one of the openings; and is

For each of the openings, the second gate is disposed along a first edge of the opening, and the third gate is disposed along a second edge of the opening opposite the first edge.

7. The x-ray source of claim 6, further comprising:

a fourth gate disposed between the first gate and the anode;

a fifth grid disposed between the first grid and the anode;

wherein for each of the openings, the fourth gate is disposed along a third edge of the opening orthogonal to the first edge, and the fifth gate is disposed along a fourth edge of the opening opposite the third edge.

8. An x-ray source as claimed in any of claims 1 to 3, wherein the second grid is a grid-like grid.

9. The x-ray source of any of claims 1-3, wherein a distance between the field emitter and the first grid is less than 300 micrometers (μm), and a distance between the first grid and the second grid is greater than 1 millimeter (mm).

10. The x-ray source of any of claims 1-3, further comprising a third grid disposed between the second grid and the anode.

11. The x-ray source of any of claims 1 to 3, wherein each of the first grid and the second grid comprises a single row of openings.

12. The x-ray source of any of claims 1 to 3, wherein the opening of the first grid is laterally offset from the opening of the second grid.

13. The x-ray source of any of claims 1 to 3, wherein the opening of the first grid has a different width than the opening of the second grid.

14. An x-ray source as claimed in any of claims 1 to 3, wherein the field emitter is one of a plurality of separate field emitters disposed in a vacuum enclosure.

15. The x-ray source of any of claims 1 to 3, further comprising:

a spacer disposed between the first gate and the anode;

wherein the second gate is disposed on the spacer.

16. An x-ray source, comprising:

a vacuum enclosure;

an anode disposed in the vacuum enclosure;

a plurality of field emitters disposed in the vacuum enclosure, each field emitter configured to generate an electron beam;

a plurality of first gates, each first gate associated with a corresponding one of the field emitters and configured to control field emission from the corresponding field emitter; and

a second grid disposed between the first grid and the anode.

17. The x-ray source of claim 16, wherein:

the second grid comprises a plurality of second grids, each associated with a corresponding one of the first grids and disposed between the corresponding first grid and the anode.

18. An x-ray source, comprising:

means for emitting electrons from a field;

means for controlling electron emission from the means for emitting electrons from the field;

means for generating x-rays in response to incident electrons; and

means for varying an electric field at a plurality of locations between the means for controlling the emission of electrons from the means for emitting electrons from the field and the means for generating x-rays in response to the incident electrons.

19. The x-ray source of claim 18, wherein:

the means for emitting electrons from the field is one of a plurality of means for emitting electrons from a corresponding field; and is

The means for varying the electric field comprises means for varying the electric field across each of the plurality of means for emitting electrons from a corresponding field.

20. The x-ray source of any of claims 18-19, further comprising means for varying an electric field between the means for controlling the electron emission from the means for emitting electrons from the field and the means for generating x-rays in response to the incident electrons.

Technical Field

The present invention relates to x-ray sources.

Background

Arcing and ion bombardment can occur in x-ray tubes. For example, an arc may form in the vacuum or dielectric of the x-ray tube. The arc may damage internal components of the x-ray tube, such as the cathode. Furthermore, the charged particles may be formed by electric arcs in the vacuum enclosure ionizing residual atoms and/or by atoms ionized by an electron beam. These charged particles may be accelerated towards the cathode and may cause damage.

Disclosure of Invention

The invention provides an x-ray source as defined in claim 1. Optional features are defined in the dependent claims.

Drawings

Figures 1A-1C are block diagrams of field emitter x-ray sources having multiple gates, according to some embodiments.

Fig. 2 is a block diagram of a field emitter x-ray source having a plurality of grid-like grids according to some embodiments.

Fig. 3A-3B are top views of examples of grid grids of a field emission emitter x-ray source having a plurality of grid grids, according to some embodiments.

Fig. 4 is a block diagram of a field emitter x-ray source having a plurality of aperture gates, according to some embodiments.

Fig. 5A-5B are block diagrams of field emitter x-ray sources having multiple offset grid-like grids, according to some embodiments.

Fig. 6A-6B are block diagrams of field emitter x-ray sources having multiple offset grid-like grids, according to some embodiments.

Figure 7 is a block diagram of a field emitter x-ray source having multiple split gates according to some embodiments.

Fig. 8 is a block diagram of a field emission emitter x-ray source having a grid-like grid and an aperture grid, according to some embodiments.

Figures 9A-9B are block diagrams of field emitter x-ray sources having multiple field emitters, according to some embodiments.

Fig. 10A is a block diagram of a field emitter x-ray source having multiple split gates, according to some embodiments.

Fig. 10B-10C are block diagrams of the voltage source 118l of fig. 10A according to some embodiments.

Fig. 10D is a block diagram of a field emitter x-ray source with multiple split gates according to some embodiments.

Figure 11A is a block diagram of a field emitter x-ray source having multiple split gates and multiple field emitters, according to some embodiments.

Fig. 11B is a block diagram of a split gate according to some embodiments.

Figure 11C is a block diagram of a field emitter x-ray source having multiple split gates and multiple field emitters, according to some embodiments.

Fig. 11D is a block diagram of a split gate according to some embodiments.

Figure 11E is a block diagram of a field emitter x-ray source having multiple split gates and multiple field emitters, according to some embodiments.

Fig. 11F is a block diagram of a split gate according to some embodiments.

Detailed Description

Some embodiments relate to an x-ray source having a plurality of grids, and in particular to an x-ray source having a plurality of grid-like grids.

When an electron beam generates x-rays, field emitters (such as nanotube emitters) may be damaged by arcing and ion bombardment events. Arcing is a common phenomenon in x-ray tubes. Arcing may occur when a vacuum or some other dielectric material is unable to sustain a high potential gradient. Very high energy pulses of charged particles (electrons and/or ions) temporarily bridge the vacuum or dielectric spacer. Once the high energy arc pulse is initiated, all residual gas species in the vicinity are ionized, with most of the ionized species becoming positively charged ions and attracted to the negatively charged cathode, including the Nanotube (NT) emitter. If NT emitters are exposed to these high energy ion pulses, the emitters can be severely damaged.

Ion bombardment is another common phenomenon in x-ray tubes. When the electron beam is ignited and passes through the vacuum gap to the anode, it may ionize residual gaseous species in the tube or tungsten atoms sputtered from the target. Once ionized, typically with positive polarity, the ions are accelerated toward the cathode (including the NT emitter).

Embodiments described herein may reduce the effects of arcing and/or ion bombardment. One or more additional grids may intercept arcs or ions and reduce the chance of damage to the field emitter.

Figures 1A-1C are block diagrams of field emitter x-ray sources having multiple gates, according to some embodiments. Referring to fig. 1A, in some embodiments, an x-ray source 100a includes a substrate 102, a field emitter 104, a first grid 106, a second grid 108, an intermediate electrode 110, and an anode 112. In some embodiments, the substrate 102 is made of a material such as ceramic, glass, alumina (Al)₂O₃) Aluminum nitride (AlN), silicon oxide or quartz (SiO)₂) Etc. of insulating material.

The field emitter 104 is disposed on the substrate 102. The field emitter 104 is configured to generate an electron beam 140. The field emitters 104 may comprise various types of emitters. For example, the field emitters 104 may include nanotube emitters, nanowire emitters, Spindt arrays, and the like. Typically, nanotubes have a structure with at least a portion having a hollow center, wherein the nanowire or nanorod has a substantially solid core. To simplify the use of terminology, nanotubes, as used herein, also refers to nanowires and nanorods. Nanotubes refer to nanoscale (nm scale) tubular structures having an aspect ratio of at least 100:1 (length: width or diameter). In some embodiments, the field emitters 104 are formed of an electrically conductive material having high tensile strength and high thermal conductivity, such as carbon, metal oxides (e.g., Al) in pure or doped form₂O₃Titanium oxide (TiO)₂) Zinc oxide (ZnO) or manganese oxide) (Mn_xO_yWhere x and y are integers)), metals, sulfides, nitrides, carbides, and the like.

The first gate 106 is configured to control field emission from the field emitter 104. For example, the first gate 106 may be positioned about 200 micrometers (μm) from the field emitter 104. In other embodiments, the first gate 106 may be disposed at different distances, such as from about 2 μm to about 500 μm or from about 10 μm to about 300 μm. Regardless, the first gate 106 is an electrode that can be used to generate an electric field at the field emitter 104 of sufficient strength to cause electron emission. The structure that controls field emission will be referred to as the first gate 106, although some field emitters 104 may have other gates, electrodes, etc. In some embodiments, the first gate 106 (or electron extraction gate) may be the only gate that controls field emission from the field emitter 104. In an example, the first gate 106 may be a conductive grid-like structure or a metal grid-like structure.

The grid is an electrode made of a conductive material, usually placed between the emitter of the cathode and the anode. A voltage potential is applied to the gate to produce a change in the electric field, thereby producing a focusing or controlling effect on the electrons and/or ions. The first grid 106 may be used to control the flow of electrons between the cathode and the anode. The grid may have the same or different voltage potential as the cathode, anode and other grids. The gate may be insulated from the cathode and the anode. The grid may comprise a structure at least partially surrounding the electron beam, the structure having at least one opening to allow the electron beam to pass from the emitter to the anode. A gate with a single opening may be referred to as an aperture gate. In an example, the aperture gate may not obstruct the path of the main portion of the electron beam. A grid with a plurality of openings is referred to as a grid with support structures between the openings. A mesh is a barrier made of connecting wires of metal, fiber or other connecting material with openings between the connecting wires. The connecting line (or bar) may be in the path of the electron beam and obstruct a portion of the electron beam. The amount of obstruction may depend on the width, depth or diameter of the openings and the width or depth of the connecting lines or strips of the grid between the openings. In some examples, the obstruction of the mesh may be secondary with respect to electrons passing through the openings of the mesh. Typically, the openings of the aperture grid are larger than the openings of the grid-like grid. The gate may be formed of molybdenum (Mo), tungsten (W), copper (Cu), stainless steel, or other rigid conductive materials, including those with high thermal conductivity (e.g., >10 watts/meter kelvin (W/m K)) and/or high melting temperature (> 1000C). In an example with multiple emitters, each gate may be an electrode associated with a single field emitter 104, and the voltage potential of the gate may be controlled or adjusted individually for each field emitter 104 in the cathode.

The anode 112 may include a target (not shown) to receive the electron beam 140 emitted from the field emitter 104. The anode 112 may include any structure that can generate x-rays in response to an incident electron beam 140. The anode 112 may comprise a stationary or a rotating anode. The anode 112 may receive a voltage from a voltage source 118. The voltage applied to anode 112 may be about 20-230 kilovolts (kV), about 50-100kV, etc. (relative to the cathode or ground).

The second grid 108 is disposed between the first grid 106 and the anode 112. In some embodiments, the second gate 108 may be disposed about 1 to 2 millimeters (mm) from the field emitter 104. That is, the second gate 108 is disposed at a position that effectively does not cause electrons to be emitted from the field emitter 104. In other embodiments, the second gate 108 may be disposed further than 1-2 mm. For example, the second gate 108 may be arranged at a distance of 10 mm from the field emitter 104, such as 10-50mm from the field emitter 104. In some implementations, the minimum spacing of the second gate 108 from the first gate 106 is about 1 mm.

The x-ray source 100a includes a voltage source 118. The voltage source 118 may be configured to generate a plurality of voltages. Voltages may be applied to various structures of the x-ray source 100 a. In some embodiments, the voltages may be different, constant (i.e., Direct Current (DC)), variable, pulsed, correlated, independent, etc. In some embodiments, voltage source 118 may comprise a variable voltage source, wherein the voltage may be temporarily set to a configurable voltage. In some embodiments, the voltage source 118 may include a variable voltage source that may be configured to generate a time-varying voltage, such as a pulsed voltage, an arbitrarily varying voltage, or the like. Dashed line 114 represents the walls of vacuum enclosure 114a that houses field emitter 104, gates 106 and 108, and anode 112. Feedthrough 116 may allow voltage from voltage source 118 to penetrate vacuum enclosure 114 a. Although a direct connection from feedthrough 116 is shown as an example, other circuitry (such as resistors, voltage dividers, etc.) may also be disposed within vacuum enclosure 114 a. Although absolute voltages may be used as an example of voltages applied by the voltage source 118, in other embodiments, the voltage source 118 may be configured to apply voltages having the same relative spacing regardless of the absolute value of any one voltage.

In some embodiments, voltage source 118 is configured to generate a voltage as low as-3 kilovolts (kV) or between 0.5kV and-3 kV for field emitter 104. The voltage of the first gate 106 may be about 0 volts (V) or ground. The voltage of the second gate 108 may be about 100V, between 80V and 120V, or about 1000V, etc. The voltage of the second gate 108 may be a negative voltage or a positive voltage.

Although a particular voltage has been exemplified, in other embodiments, the voltage may be different. For example, the voltage applied to the second gate 108 may be higher or lower than the voltage applied to the first gate 106. The voltages applied to the first gate 106 and the second gate 108 may be the same. In some embodiments, the ions may be expelled if the voltage of the second grid 108 is higher than the voltage applied to the first grid 106. In some embodiments, the second gate 108 may be used to adjust the focal spot size and/or adjust the focal spot position. Focal spot refers to the region where the electron beam 140 from the field emitter 104 in the cathode impinges on the anode 112. The voltage source 118 may be configured to receive feedback related to the focal spot size, receive a voltage set point for the voltage applied to the second gate 108 based on such feedback, etc., such that the voltage applied to the second gate 108 may be adjusted to achieve a desired focal spot size. In some embodiments, the voltage source 118 can be configured to apply a negative voltage to the first grid 106 or the second grid 108 and/or to raise the voltage of the field emitter 104 to turn off the electron beam 140, such as if an arc is detected. Although positive and negative voltages, voltages with respect to a particular potential (such as ground), etc., have been exemplified, in other embodiments, the various voltages may differ depending on a particular reference voltage.

An arc may be generated in the vacuum enclosure 114 a. The arc may hit the field emitter 104, which may damage or destroy the field emitter 104, thereby causing a serious failure. The second grid 108 can provide a path for an arc other than the field emitter 104 when the voltage applied to the second grid 108 is at a voltage closer to the voltage of the field emitter 104 than the anode 112. As a result, the possibility of damage to the field emitter 104 may be reduced or eliminated.

Furthermore, ions may be generated by arc discharge and/or by ionization of the target material evaporated on the anode 112. These ions may be positively charged and thus attracted to the most negatively charged surface, such as field emitter 104. The second grid 108 may provide a physical barrier for such ions and protect the field emitters 104 by casting shadows on the field emitters 104. In addition, the second grid 108 may sufficiently decelerate the ions so that any damage due to ions being incident on or colliding with the field emitter 104 may be reduced or eliminated.

As described above, the second gate 108 may be relatively close to the field emitter 104, such as about 1mm to 30mm or more. Because the field emitter 104 operates at a lower temperature than a conventional tungsten cathode, the use of a field emitter (such as field emitter 104) may allow the second gate 108 to be positioned at this closer distance. Heat from such conventional tungsten cathodes may warp and/or distort the second gate 108, thereby affecting the focus or other operating parameters of the x-ray source 100 a.

The x-ray source 100a can include a middle electrode 110. In some embodiments, the intermediate electrode 110 may serve as a focusing electrode. The intermediate electrode 110 may also provide some protection for the field emitter 104, such as during a high voltage breakdown event. In an example with multiple emitters, the intermediate electrode 110 may have a voltage potential common to the field emitters 104 of the cathode. In an example, the intermediate electrode 110 is located between the second gate 108 (or the first gate 106) and the anode 112.

Referring to fig. 1B, in some embodiments, the x-ray source 100B can be similar to the x-ray source 100a of fig. 1A. However, in some embodiments, the location of the second gate 108 may be different. Here, the second gate 108 is disposed on the opposite side of the intermediate electrode 110 such that it is disposed between the intermediate electrode 110 and the anode 112.

Referring to fig. 1C, in some embodiments, x-ray source 100C may be similar to x-ray sources 100a or 100b described above. However, x-ray source 100c includes a plurality of second grid electrodes 108 (or additional grid electrodes). Two second gates 108-1 and 108-2 are illustrated here, but in other embodiments the number of second gates 108 may be different.

One or more additional second gates 108 may be used to obtain more protection from ion bombardment and arcing. In some embodiments, one or more second gates 108 may be added to the design if one second gate 108 cannot provide sufficient protection. Although one or more additional second grids 108 may reduce beam current to the anode 112, the reduced beam current may be offset by better protection from arcing or ion bombardment. In addition, the greater number of second gates 108 provides additional flexibility for applying voltages from voltage source 118. The additional voltage may allow one second grid 108-1 to provide some protection while another second grid 108-2 may be used to tune the focal spot of the electron beam 140. For example, in some embodiments, the voltages applied to the second gate 108-1 and the second gate 108-2 are the same, while in other embodiments, the voltages are different.

As shown, the second gate 108-2 is disposed between the second gate 108-1 and the intermediate electrode 110. However, in other embodiments, the second gate 108-2 may be disposed at other locations between the second gate 108-1 and the anode 112, such as on the opposite side of the intermediate electrode 110, as shown in fig. 1B. In some embodiments, some or all of the second gate 108 is disposed on one side or the other of the intermediate electrode 110.

In some embodiments, the second gate 108-2 may be spaced apart from the second gate 108-1 to reduce the effect of the second gate 108-2 on electron transport. For example, the second gate 108-2 may be spaced 1mm or more from the second gate 108-1. In other embodiments, second gate 108-2 may be spaced from second gate 108-1 to affect control of focal spot size.

In various embodiments as described above, dashed lines are used to illustrate the various gates 106 and 108. Other embodiments described below include a particular type of gate. These types of gates may be used as the gates 106 and 108 described above.

Fig. 2 is a block diagram of a field emitter x-ray source having a plurality of grid-like grids according to some embodiments. Fig. 3A-3B are top views of examples of grid gates of a field emitter x-ray source having a plurality of grid gates, according to some embodiments. Referring to fig. 2 and 3A, in some embodiments, gates 106d and 108d are grid-like gates. That is, gates 106 and 108 include a plurality of openings 206 and 216, respectively. As shown, the openings 206 and 216 may be arranged in a single row of openings. Although a particular number of openings 206 and 216 are illustrated, in other embodiments, the number of one or both may vary.

In some embodiments, the width W1 of the opening 206 of the first gate 106d may be about 125 μm. In some embodiments, width W1 may be less than the spacing of first gate 106d from field emitter 104. For example, the width W1 may be less than 200 μm. The width W2 of the bars 204 may be about 10 μm to about 50 μm, about 25 μm, etc. The width W3 of the opening 216 of the second gate 108d may be about 225 μm. The width W4 of the stripes 214 of the second gate 108d may be about 10 μm to about 50 μm, about 25 μm, etc. Thus, in some embodiments, openings 206 and 216 may have different widths and may not be aligned. In some embodiments, the thickness of the gate electrodes 106d and 108d may be from about 10 μm to about 100 μm, about 75 μm, etc.; however, in other embodiments, the thicknesses of gates 106d and 108d may be different, including different from each other. Further, in some embodiments, the widths W1-W4 or other dimensions of the first grid 106d and the second grid 108d may be selected such that the second grid 108d is more transparent to the electron beam 140 than the first grid 108 d.

Referring to fig. 3B, in some embodiments, at least one of the first gate 106 and the second gate 108 may include a plurality of rows, wherein each row includes a plurality of openings. For example, the first gate 106d 'includes two rows of the plurality of openings 206', and the second gate 108d 'includes two rows of the plurality of openings 208'. Although two rows have been illustrated, in other embodiments the number of rows may vary. Although the same number of rows has been illustrated between the first gate 106d 'and the second gate 108 d', in other embodiments, the number of rows between the first gate 106d 'and the second gate 108 d' may be different.

Fig. 4 is a block diagram of a field emitter x-ray source having a plurality of aperture gates, according to some embodiments. In some embodiments, the x-ray source 100e may be similar to the x-ray source 100 described herein. However, X-ray source 100e includes gates 106e and 108e as aperture gates. That is, gates 106e and 108e each include a single opening. As will be described in further detail below, in other embodiments, the grid 106e may be a grid, while the grid 108e is an aperture grid. In some embodiments, aperture gates 106e or 108e may be easier to handle and manufacture.

Fig. 5A-5B are block diagrams of field emitter x-ray sources having multiple offset grid-like grids, according to some embodiments. Referring to fig. 5A and 5B, x-ray source 100f may be similar to other x-ray sources 100 described herein. In some embodiments, x-ray source 100f includes second grid electrodes 108f-1 and 108f-2 that are laterally offset (relative to the surface of emitter 104) from one another. A different voltage may be applied to each of the second gates 108f-1 and 108 f-2. As a result, the electron beam 140 can be steered using a voltage. For example, in FIG. 5A, 100V may be applied to the second gate 108f-2, while 0V may be applied to the second gate 108 f-1. In FIG. 5B, 0V may be applied to the second gate 108f-2, and 100V may be applied to the second gate 108 f-1. Thus, the direction of the electron beam 140 may be affected. Although a specific example of the voltage applied to the second gates 108f-1 and 108f-2 is illustrated, in other embodiments, the voltage may be different.

Fig. 6A-6B are block diagrams of field emitter x-ray sources having multiple offset grid-like grids, according to some embodiments. Referring to fig. 6A and 6B, x-ray source 100g may be similar to x-ray source 100 f. However, x-ray source 100g includes apertures such as gates 108g-1 and 108 g-2. The aperture gates 108g-1 and 108g-2 may be used in a similar manner as the grid gates 108f-1 and 108f-2 of FIGS. 5A and 5B.

Figure 7 is a block diagram of a field emitter x-ray source having multiple split gates according to some embodiments. x-ray source 100h may be similar to x-ray source 100e of fig. 4. However, x-ray source 100h may include split gates 108h-1 and 108 h-2. The gates 108h-1 and 108h-2 may be disposed at the same distance from the field emitter 104. However, voltage source 118 may be configured to apply independent voltages to split gates 108h-1 and 108 h-2. Although the voltages may be the same, the voltages may be different. As a result, depending on the voltage applied to gates 108h-1 and 108h-2, the direction of electron beam 140h can be controlled to obtain electron beam 140h-1 or 140 h-2.

Fig. 8 is a block diagram of a field emission emitter x-ray source having a grid-like grid and an aperture grid, according to some embodiments. The x-ray source 100i may be similar to the x-ray source 100 described herein. However, x-ray source 100i includes aperture grid 108i-1 and grid 108 i-1. In some embodiments, the grid 108i-1 may be used to resize the focal spot, shape, sharpen or otherwise better define the edges, etc. of the electron beam 140. A better defined edge of the electron beam 140 may be an edge at which the beam current flux varies more over a shorter distance than a less well defined edge. The grid 108i-2 may be used to collect ions and/or provide protection for the first grid 106i, the field emitter 104, etc. For example, the electron beam 140 may be focused by applying a negative bias of about-100V to the grid-like grid 108 i-1.

Figures 9A-9B are block diagrams of field emitter x-ray sources having multiple field emitters, according to some embodiments. Referring to fig. 9A, in some embodiments, x-ray source 100j may be similar to other x-ray sources 100 described herein. However, x-ray source 100j includes a plurality of field emitters 104j-1 through 104j-n, where n is any integer greater than 1. Although the anode 112 is shown in fig. 9A-9B as not being angled, in some embodiments the anode 112 can be angled and the plurality of field emitters 104j-1 through 104j-n can be disposed in a line perpendicular to the slope of the anode. That is, the views of FIGS. 9A-9B may be rotated 90 degrees relative to the views of FIGS. 1A-2 and 4-8.

Each of the field emitters 104j is associated with a first gate 106j configured to control field emission from the corresponding field emitter 104 j. As a result, each of field emitters 104j is configured to generate a corresponding electron beam 140 j.

In some embodiments, a single second gate 108j is disposed across all field emitters 104 j. Although the second gate 108j is shown disposed between the first gate 106j and the intermediate electrode 110j, the second gate 108j may be disposed at various locations as described above. As a result, the second gate 108j may provide the additional protection, steering, and/or focusing described above. Further, a plurality of second gates 108j may be disposed across all field emitters 104 j.

Referring to fig. 9B, in some embodiments, x-ray source 100k may be similar to x-ray source 100 j. However, each field emitter 104j is associated with a corresponding second gate 108 k. Thus, the above-described protection, steering and/or focusing may be performed individually for each field emitter 104 k.

In other embodiments, some field emitters 104 may be associated with a single second gate 108 similar to second gate 108j of fig. 9A, while other field emitters 104 may be associated with separate second gates 108 similar to second gate 108k of fig. 9B.

In some embodiments, a plurality of field emitters 104 can be associated with separate second gates 108, each of which has a separately controllable voltage. However, the intermediate electrode 110 may comprise a single intermediate electrode 110 associated with each field emitter 104. In some embodiments, the intermediate electrodes 110-1 to 110-n may be separate structures, but may have the same voltage applied by the voltage source 118, another voltage source, or by means of being attached to or being part of the housing, vacuum enclosure, or the like.

Fig. 10A is a field effect transistor with multiple split gates according to some embodimentsBlock diagram of an emitter x-ray source. The x-ray source 100l may be similar to the x-ray source 100h of fig. 7. In some embodiments, insulator 150-1 may be disposed on substrate 102. The first gate 106l may be disposed on the insulator 150-1. A second insulator 150-2 may be disposed on the first gate 106 l. A second gate 108l (comprising two electrically isolated split gates 108l-1 and 108l-2) may be disposed on the second insulator 150-2. A third insulator 150-3 may be disposed on the second gate 108 l. The intermediate electrode 110 may be disposed on the third insulator 150-3. Although a particular size of the insulator 150 has been used for illustration, in other embodiments, the insulator 150 may have a different size. Insulator 150 may be made of, for example, ceramic, glass, alumina (Al)₂O₃) Aluminum nitride (AlN), silicon oxide or quartz (SiO)₂) Etc. of insulating material. The insulators 150 may be formed of the same or different materials.

In some embodiments, the split gates 108l-1 and 108l-2 are insulated from each other so that different voltages can be applied to the split gates 108l-1 and 108 l-2. These different voltages may be used to move the position of the focal spot on the anode 112. For example, when equal potentials are applied to both split gates 108l-1 and 108l-2, the focal spot should be located in or near the center of the anode, as shown by electron beam 140 l-1. When a push (positive) potential is applied on split gate 108l-2 and a pull (negative) potential is applied on split gate 108l-1, the focal spot is shifted to the left as shown by electron beam 140 l-2. Once a pull (negative) potential is applied on split gate 108l-2 and a push (positive) potential is applied on split gate 108l-1, the focal spot may be shifted to the right as shown by electron beam 140 l-3.

In some embodiments, control of the voltage applied to the separation gates 108l-1 and 108l-2 provides a way to scan or move the focal spot across the surface of the anode 112. In some embodiments, instead of a fixed focal spot having a very small focal spot size, power may be distributed over the anode 112 in a focal spot track having a much larger area, which may significantly increase the power limit of the x-ray tube. That is, by scanning the focal spot along the track, the power can be distributed over a larger area. Although the focal spot has been exemplified as being moved in a direction in the plane of the drawing, in other embodiments the movement of the focal spot may have a different direction, multiple directions, etc., wherein the second grid 108l is arranged at a suitable position around the electron beam 140 l. In some embodiments, focal spot width, focusing, defocusing, etc. may be adjusted by using separate gates 108l-1 and 108 l-2.

Fig. 10B-10C are block diagrams of the voltage source 118l of fig. 10A according to some embodiments. Referring to fig. 10A-10C, in some embodiments, the voltage sources 118l-1 and 118l-2 may include an Electronic Control System (ECS)210, a switching control power supply (TCPS)212, and a grid control power supply (MCPS) 216. ECS 210, TCPS 212, and MCPS 216 may each include circuitry configured to generate the various voltages described herein (including voltages of approximately +/-1kV, +/-10 kV, etc.). The ECS 210 can be configured to generate a voltage for the field emitter 104. The ECS 210 may be configured to control one or more of the TCPS 212 and MCPS 216 to generate voltages for the first gate 106l and the split gates 108l-1 and 108 l-2. The dashed lines in fig. 10B and 10C represent control interfaces between the various systems.

In some embodiments, the TCPS 212 of voltage source 118l-1 can be configured to generate a voltage for the split gates 108l-1 and 108l-2 with reference to the voltage for the first gate 106l, as shown in FIG. 10B, while in other embodiments, the TCPS 212 of voltage source 118l-2 can be configured to generate a voltage for the split gates 108l-1 and 108l-2 with reference to ground 216, as shown in FIG. 10C. For example, when the TCPS 212 references the MCPS 214, the absolute values of the voltages for the split gates 108l-1 and 108l-2 are automatically modulated to maintain the same potential difference (electric field) between the split gates 108l-1 and 108l-2 and the first gate 106 l. When TCPS 212 is referenced to main ground 216, the absolute value of the voltage applied to split gates 108l-1 and 108l-2 may be fixed, and the potential difference (electric field) between split gates 108l-1 and 108l-2 and first gate 106l may change as the potential on first gate 106l changes. In some embodiments, the voltage for the field emitter 104 may be generated by the ECS 210 with reference to the voltage for the first gate 106 l. In other embodiments, the ECS 210 can be configured to generate a voltage for the field emitter 104 with reference to the ground 216.

Fig. 10D is a block diagram of a field emitter x-ray source with multiple split gates according to some embodiments. The x-ray source 100m of fig. 10D may be similar to the x-ray source 100l of fig. 10A. However, in some embodiments, a gate frame 152m may be added to the first gate 106 m. The gate frame 152m may be formed of a metal, ceramic, or other material that provides structural support to the first gate electrode 106m to improve its mechanical stability. In some embodiments, the gate frame 152m may be thicker than the first gate 106 m. For example, the gate frame 152m may have a thickness of about 1-2mm, and the first gate electrode 106m may have a thickness of about 50-100 μm. In some embodiments, the gate frame 152m may extend into an opening through which the electron beam 140m passes. In other embodiments, the gate frame 152m may be located only on the perimeter of the opening.

Figure 11A is a block diagram of a field emitter x-ray source having multiple split gates and multiple field emitters, according to some embodiments. The x-ray source 100n may be similar to the system 100 described herein, such as the systems 100j and 100k of fig. 9A and 9B. In some embodiments, the x-ray source 100n includes spacers 156 n. The spacers may be similar to the insulator 150, use a similar material as the insulator 150, use a different material, have a different thickness, etc. Split gates 108n-1 and 108n-2 may be formed on spacers 156 n. The spacers 156n may be common to each of the field emitters 104n-1 through 104 n-n.

Fig. 11B is a block diagram of a split gate according to some embodiments. Referring to fig. 11A and 11B, in some embodiments, split gates 108n-1 and 108n-2 may be formed on spacers 156 n. For example, the split gates 108n-1 and 108n-2 may be formed by screen printing, thermal evaporation, sputter deposition, or other thin film deposition process. The electrodes separating gates 108n-1 and 108n-2 may be disposed on opposite sides of the plurality of openings 158 of spacer 156 n. The split gates 108n-1 may be electrically connected to each other. Similarly, the split gates 108n-2 may be electrically connected to each other. However, there may be no electrical connection between split gates 108n-1 and 108n-2 to allow split gate 108n to operate independently and generate different potentials. Once different potentials are applied to the split gates 108n-1 and 108n-2, an electric field may be generated across the opening 158 over the spacer 156 n. This may deflect electrons passing through the opening 158, as described above.

Figure 11C is a block diagram of a field emitter x-ray source having multiple split gates and multiple field emitters, according to some embodiments. Fig. 11D is a block diagram of a split gate according to some embodiments. Referring to fig. 11C and 11D, x-ray source 100o may be similar to x-ray source 100n of fig. 11A. However, split gates 108o-1 and 108o-2 are disposed on orthogonal sides of opening 158 of spacer 156o relative to spacer 156 n. As a result, the electron beams 140o-1 to 140o-n can be adjusted in orthogonal directions. For ease of illustration, split gate 108o-2 is not shown in FIG. 11C (because it is behind split gate 108o-1 in FIG. 11C).

Figure 11E is a block diagram of a field emitter x-ray source having multiple split gates and multiple field emitters, according to some embodiments. Referring to FIGS. 11B, 11D, and 11E, the x-ray source 100p may be similar to the systems 100n and 100o described above. In particular, x-ray source 100p includes split gates 108p-1 and 108p-2 similar to split gates 108o-1 and 108o-2 and split gates 108p-3 and 108p-4 similar to split gates 108n-1 and 108 n-2. Thus, the x-ray source 100p may be configured to simultaneously, independently adjust focal spots, etc., as described above, in multiple directions. Although the order or stacking of the split gates 108p-1 and 108p-2 has been exemplified, in other embodiments, the order or stacking may be different.

Fig. 11F is a block diagram of a split gate according to some embodiments. In some embodiments, the split gates 108o and 108n of fig. 11B and 11D may be combined on the same spacer 156 n. For example, the split gate 108o may be disposed on a side of the spacer 156n opposite the split gate 108 n. The electrode for the split gate 108o is shown in dashed lines to illustrate the split gate 108o on the backside of the spacer 156 n. In some embodiments, the electrode for split gate 108o may be located on the same side as split gate 108n, with vias, metallization holes, or other electrical connections through spacer 156 n.

Some embodiments include an x-ray source comprising: an anode 112; a field emitter 104 configured to generate an electron beam 140; a first gate 106 configured to control field emission from the field emitter 104; and a second grid 108 disposed between the first grid 106 and the anode 112, wherein the second grid 108 is a grid-like grid.

In some embodiments, the field emitter 104 is one of a plurality of separate field emitters 104 disposed in a vacuum enclosure 114.

In some embodiments, the field emitters 104 comprise nanotube field emitters 104.

In some embodiments, the x-ray source further comprises a spacer disposed between the first gate 106 and the anode 112; wherein the second gate 108 comprises a grid-like gate disposed on the spacer 152 m.

In some embodiments, the x-ray source further includes a voltage source 118 configured to apply a first voltage to the first grid 106 and a second voltage to the second grid 108.

In some embodiments, the first voltage and the second voltage are the same.

In some embodiments, the first voltage and the second voltage are grounded.

In some embodiments, the first voltage and the second voltage are different.

In some embodiments, voltage source 118 is a variable voltage source; and the variable voltage source is configured to vary at least one of the first voltage and the second voltage.

In some embodiments, the x-ray source further includes a third grid 108-2 disposed between the first grid 106 and the anode 112 and at the same distance from the field emitter 104 as the second grid 108-1; wherein the voltage source is configured to apply a third voltage to the third gate 108-2, and the third voltage is different from the second voltage.

In some embodiments, the x-ray source further includes a third grid 108-2 disposed between the first grid 106 and the anode 112 and at the same distance from the field emitter 104 as the second grid 108-1; wherein the voltage source is configured to apply a third voltage to the third gate 108-2, and the voltage source is configured to independently apply the third voltage and the second voltage.

In some embodiments, the x-ray source further comprises: a spacer disposed between the first gate 106 and the anode 112; a third gate electrode disposed between the first gate electrode 106 and the anode electrode 112; wherein the second gate 108-1 and the third gate 108-2 are disposed on the spacer 156.

In some embodiments, the spacers 156 comprise openings; a second gate 108-1 is disposed along a first edge of the opening and a third gate 108-2 is disposed along a second edge of the opening opposite the first edge.

In some embodiments, the spacer 156 includes a plurality of openings; the field emitter 104 is one of a plurality of field emitters 104, each field emitter 104 being aligned with a corresponding one of the openings; and for each opening, a second gate 108-1 is disposed along a first edge of the opening and a third gate 108-2 is disposed along a second edge of the opening opposite the first edge.

In some embodiments, the x-ray source further comprises: a fourth gate 108-3 disposed between the first gate 106 and the anode 112; a fifth grid 108-4 disposed between the first grid 106 and the anode 112; wherein for each opening, the fourth gate 108-3 is disposed along a third edge of the opening orthogonal to the first edge, and the fifth gate 108-4 is disposed along a fourth edge of the opening opposite the third edge.

In some embodiments, the x-ray source further includes an intermediate electrode 110 disposed between the first grid 106 and the anode 112.

In some embodiments, the second grid 108 is disposed between the intermediate electrode 110 and the anode 112.

In some implementations, the second grid 108 is disposed between the focus electrode and the first grid 106.

In some embodiments, the distance between the field emitter 104 and the first gate 106 is less than 300 micrometers (μm), and the distance between the first gate 106 and the second gate 108 is greater than 1 millimeter (mm).

In some embodiments, the x-ray source further includes a third grid 108-2 disposed between the second grid 108-1 and the anode 112.

In some implementations, each of the first gate 106 and the second gate 108 includes a single row of openings.

In some implementations, at least one of the first gate 106 and the second gate 108 includes a plurality of rows, each row including a plurality of openings.

In some embodiments, the second gate 108 is a hole.

In some implementations, the opening of the first gate 106 is laterally offset from the opening of the second gate 108.

In some implementations, the opening of the first gate 106 has a different width than the opening of the second gate 108.

Some embodiments include an x-ray source comprising: a vacuum enclosure 114; an anode 112 disposed in a vacuum enclosure 114; a plurality of field emitters 104 disposed in vacuum enclosure 114, each field emitter 104 configured to generate an electron beam 140; a plurality of first gates 106, each first gate 106 associated with a corresponding one of the field emitters 104 and configured to control field emission from the corresponding field emitter 104; and a second grid 108 disposed between the first grid 106 and the anode 112.

In some embodiments, the second grid 108 includes a plurality of second grids 108, each second grid 108 associated with a corresponding one of the first grids 106 and disposed between the corresponding first grid 106 and the anode 112.

In some embodiments, the x-ray source further comprises a voltage source configured to apply a voltage to the first gate 106 and the second gate 108. In some embodiments, the x-ray source further comprises a focusing electrode, separate from the second grid 108, disposed between the field emitter 104 and the anode 112.

Some embodiments include an x-ray source comprising: means for emitting electrons from a field; means for controlling electron emission from the means for emitting electrons from the field; means for generating x-rays in response to incident electrons; and means for varying an electric field at a plurality of locations between the means for controlling the emission of electrons from the means for emitting electrons from the field and the means for generating x-rays in response to incident electrons.

An example of the means for emitting electrons from a field includes field emitter 104. An example of the means for controlling electron emission from the means for emitting electrons from the field includes a first gate 106. An example of the means for generating x-rays in response to incident electrons includes an anode 112. An example of the means for varying an electric field at a plurality of locations between the means for controlling the emission of electrons from the means for emitting electrons from the field and the means for generating x-rays in response to incident electrons includes a grid-like grid as second grid 108.

In some embodiments, the means for emitting electrons from the field is one of a plurality of means for emitting electrons from a corresponding field; and the means for varying the electric field comprises means for varying the electric field across each of the plurality of means for emitting electrons from the corresponding field.

In some embodiments, the means for varying the electric field comprises means for varying the electric field at a plurality of locations across the means for emitting electrons. Examples of the means for changing the electric field include that the means for changing the electric field at a plurality of positions across the means for emitting electrons includes a grid-like gate as the second gate 108.

In some embodiments, the x-ray source further comprises means for varying an electric field between the means for controlling electron emission from the means for emitting electrons from a field and the means for generating x-rays in response to incident electrons. An example of the means for varying the electric field between the means for controlling electron emission from the means for emitting electrons from a field and the means for generating x-rays in response to incident electrons includes a second grid 108.

Although the structures, devices, methods, and systems have been described in terms of particular embodiments, those of ordinary skill in the art will readily recognize that many variations of the particular embodiments are possible, and accordingly, any variations should be considered within the spirit and scope of the disclosure. Accordingly, many modifications may be made by one of ordinary skill in the art without departing from the spirit and scope of the appended claims.

The claims following this written disclosure are hereby expressly incorporated into this written disclosure, with each claim standing on its own as a separate embodiment. The present disclosure includes all permutations of the independent claims and their dependent claims. Moreover, further embodiments that can be derived from the subsequent independent and dependent claims are also expressly incorporated into this written description. These further embodiments are determined by replacing the dependencies of a given dependent claim with the phrase "any one of the claims starting with claim [ x ] and ending with the claim immediately preceding the claim", wherein the term "[ x ] in parentheses is replaced with the number of the most recently referenced independent claim. For example, for the first claim set starting with independent claim 1, claim 4 may depend on any one of claim 1 and claim 3, wherein these separate dependencies yield two different embodiments; claim 5 may be dependent on any of claim 1, claim 3 or claim 4, wherein the separate dependencies yield three different embodiments; claim 6 may be dependent on any of claim 1, claim 3, claim 4 or claim 5, wherein the separate dependencies result in four different embodiments; and so on.

Recitation in the claims of the term "first" with respect to a feature or element does not necessarily imply the presence of a second or additional such feature or element. Elements specifically referenced in a device-plus-function format (if any) are intended to be interpreted according to 35u.s.c. § 112(f) to cover the corresponding structures, materials or acts described herein and equivalents thereof. The embodiments of the invention in which an exclusive property or characteristic is claimed are defined as follows.