阅读说明：本技术 光检测元件和光检测装置 (Photodetector and photodetector ) 是由 间瀬光人 田口桂基 石原兆 山本洋夫 岛田明洋 于 2019-07-10 设计创作，主要内容包括：一种光检测元件,具备：半导体基板、形成于半导体基板上的第一导电型的光吸收层、形成于光吸收层上的第一导电型的盖层,以及形成于盖层内,与盖层形成pn结的第二导电型的半导体区域。形成于半导体区域的周围的耗尽层,在不向pn结施加反方向偏置的情况下,未达到光吸收层,在向pn结施加20V的反方向偏置的情况下,从盖层侧超过光吸收层的厚度的50％的位置。(A photodetecting element is provided with: the semiconductor device includes a semiconductor substrate, a light absorption layer of a first conductivity type formed on the semiconductor substrate, a cap layer of the first conductivity type formed on the light absorption layer, and a semiconductor region of a second conductivity type formed in the cap layer and forming a pn junction with the cap layer. The depletion layer formed around the semiconductor region does not reach the light absorbing layer when a reverse bias is not applied to the pn junction, and exceeds 50% of the thickness of the light absorbing layer from the cover layer side when a reverse bias of 20V is applied to the pn junction.)

1. A photodetecting element is characterized by comprising

A semiconductor substrate having a plurality of semiconductor chips formed thereon,

a light absorbing layer of a first conductivity type formed on the semiconductor substrate,

a cap layer of the first conductivity type formed on the light absorbing layer, an

A semiconductor region of a second conductivity type formed in the cap layer to form a pn junction with the cap layer,

the depletion layer formed around the semiconductor region does not reach the light-absorbing layer when a reverse bias is not applied to the pn junction, and exceeds 50% of the thickness of the light-absorbing layer from the cap layer side when a reverse bias of 20V is applied to the pn junction.

2. A light detecting element according to claim 1, wherein the depletion layer is located at a position exceeding 80% of the thickness of the light absorbing layer from the cap layer side when a reverse bias of 20V is applied to the pn junction.

3. A light detecting element according to claim 1 or 2,

the semiconductor device further includes a relaxation layer of the first conductivity type formed between the light absorbing layer and the cap layer.

4. A light detecting element according to claim 1 or 2,

the light absorbing layer and the cap layer are in contact with each other.

5. A light detecting element according to any one of claims 1 to 4,

a plurality of the semiconductor regions are formed in the cap layer, and the semiconductor regions are arranged one-dimensionally or two-dimensionally when viewed from a thickness direction of the semiconductor substrate.

6. A light detecting element according to any one of claims 1 to 5,

forming a plurality of the semiconductor regions in the cap layer, and arranging the semiconductor regions one-dimensionally when viewed from a thickness direction of the semiconductor substrate,

the cover layer has a width smaller than a width of the semiconductor substrate in a width direction perpendicular to both a thickness direction of the semiconductor substrate and an arrangement direction of the semiconductor regions.

7. A light detecting element according to claim 6,

the width of the light absorption layer is smaller than the width of the semiconductor substrate in the width direction.

8. A light detecting element according to any one of claims 1 to 7,

the first conductivity type is n-type and the second conductivity type is p-type.

9. A light detection device is characterized by comprising:

the photodetector according to any one of claims 1 to 8, and

a signal processing unit that applies a pulse voltage signal to the pn junction and obtains a detection signal output from the photodetecting element,

the pulse voltage is a voltage signal in which a first voltage at which the depletion layer does not reach the light absorbing layer and a second voltage at which the depletion layer reaches the light absorbing layer are alternately repeated.

10. The light detection device according to claim 9,

the second voltage is a voltage at which the depletion layer reaches 100% of the thickness of the light absorbing layer from the cap layer side.

11. The light detection device according to claim 9 or 10,

the second voltage is a voltage of 20V or less.

12. A light detection device according to any one of claims 9 to 11,

the second voltage is a voltage of 10V or less.

13. A light detection device according to any one of claims 9 to 12,

the second voltage is a voltage of 5V or less.

14. A light detection device according to any one of claims 9 to 13,

the light source is also provided with a light source for outputting pulsed light having sensitivity of the light detection element.

15. The light detection device according to claim 14,

the light source outputs the pulsed light at a frequency of 10KHz or more.

Technical Field

The present disclosure relates to a light detection element and a light detection device.

Background

As a sensor for obtaining a range image of an object by an indirect TOF (time of flight) method, a range image sensor is known, which includes: a semiconductor substrate provided with a photosensitive region, an insulating layer formed on the semiconductor substrate, and a grating electrode and a transfer electrode for each pixel formed on the insulating layer (for example, see patent document 1). In the example of the distance image sensor described in patent document 1, the semiconductor substrate is made of silicon, and the grating electrode and the transfer electrode are made of polysilicon.

Patent document

Patent document 1: japanese patent laid-open publication No. 2011-133464

Disclosure of Invention

Technical problem to be solved by the invention

In recent years, for example, in order to obtain a distance image of an object in fog or smoke, a distance image sensor capable of detecting light having a wavelength of about 1.5 μm is required. However, if the semiconductor substrate constituting the range image sensor is formed of silicon, sufficient sensitivity cannot be obtained for light having a wavelength of about 1.5 μm. Therefore, in order to obtain sufficient sensitivity to light having a wavelength of about 1.5 μm, it is conceivable to use a compound semiconductor substrate as a semiconductor substrate constituting a range image sensor. However, in this case, it is difficult to form the grating electrode and the transfer electrode on the compound semiconductor substrate.

In addition, it is also conceivable to perform output control (transfer control) of the detection signal in a CMOS provided at a subsequent stage of the range image sensor. However, since output control of a detection signal in the order of μ s is a limit in CMOS, output control of a detection signal by CMOS is insufficient for the indirect TOF method, which requires output control of a detection signal at a high speed in the order of tens of ns.

The purpose of the present disclosure is to provide a photodetecting element and a photodetecting device capable of realizing high-speed detection signal output control with a simple configuration.

Means for solving the problems

A photodetecting element according to one aspect of the present disclosure includes: the semiconductor substrate, the light absorption layer of the first conductivity type formed on the semiconductor substrate, the cap layer of the first conductivity type formed on the light absorption layer, and the second conductivity type semiconductor region formed in the cap layer and forming a pn junction with the cap layer, and the depletion layer formed around the semiconductor region, do not reach the light absorption layer when a reverse bias is not applied to the pn junction, and exceed 50% of the thickness of the light absorption layer from the cap layer side when a reverse bias of 20V is applied to the pn junction.

In this photodetector, when a reverse bias is not applied to the pn junction, since the depletion layer does not reach the light absorbing layer, even if carriers (electrons and holes) are generated in the light absorbing layer by incidence of the light to be detected, no current flows through the pn junction. That is, for example, by not applying a reverse bias to the pn junction, the detection signal can be prevented from being outputted from the photodetector. On the other hand, when a reverse bias of 20V is applied to the pn junction, the incidence of the light passing through the detection target, because the depletion layer exceeds 50% of the thickness of the light absorbing layer from the cover layer side, causes a current to flow through the pn junction when carriers are generated in the region where the depletion layer diffuses in the light absorbing layer. That is, for example, by applying a reverse bias of 20V to the pn junction, the detection signal can be outputted from the photodetector. Here, the potential difference of 20V is, for example, a potential difference that hardly affects the design of a circuit of a subsequent stage such as a CMOS, and is a potential difference that can be modulated at a high speed of several tens of ns. Therefore, according to the photodetection element, high-speed output control of the detection signal can be realized with a simple configuration.

In the photodetector according to one aspect of the present disclosure, when a reverse bias of 20V is applied to the pn junction, the depletion layer may exceed 80% of the thickness of the light absorbing layer from the cover layer side. This can improve sensitivity and responsiveness. In particular, it is effective for a structure in which light is incident from the semiconductor substrate side.

The photodetector according to one aspect of the present disclosure further includes a relaxation layer of the first conductivity type formed between the light absorbing layer and the cap layer. This makes it possible to smoothly move carriers generated in the region where the depletion layer diffuses in the light absorbing layer.

In the light detection element of one aspect of the present disclosure, the light absorption layer and the cap layer may also be in contact with each other. Thereby, it is possible to reduce the reverse bias required for the depletion layer from the position of the cover layer side exceeding at least 50% of the thickness of the light absorbing layer.

In the photodetection element of one aspect of the present disclosure, a plurality of semiconductor regions are formed within the cap layer, and the semiconductor regions may also be arranged one-dimensionally or two-dimensionally when viewed from the thickness direction of the semiconductor substrate. Thereby, the light detection element can be used to obtain a range image.

In the photodetector according to one aspect of the present disclosure, the semiconductor regions are formed in plural numbers in the cap layer and arranged one-dimensionally when viewed from the thickness direction of the semiconductor substrate, and the width of the cap layer may be smaller than the width of the semiconductor substrate in a width direction perpendicular to both the thickness direction of the semiconductor substrate and the arrangement direction of the semiconductor regions. This can suppress the carriers generated in the region around the pn junction region from becoming noise.

In the photodetector according to one aspect of the present disclosure, the width of the light absorbing layer may be smaller than the width of the semiconductor substrate in the width direction. This can more reliably suppress the occurrence of noise in carriers generated in a region around the pn junction region.

In the photodetector according to one aspect of the present disclosure, the first conductivity type may be n-type, and the second conductivity type may be p-type. This ensures the ease of manufacturing the photodetector.

A photodetection device according to an aspect of the present disclosure includes: the above-described photodetector and the signal processing unit that applies a bias voltage signal to the pn junction and obtains a detection signal output from the photodetector, and the pulse voltage is a voltage signal in which a first voltage at which the depletion layer does not reach the light absorbing layer and a second voltage at which the depletion layer reaches the light absorbing layer are alternately repeated.

According to the photodetection device, in a state where the bias voltage signal is applied to the photodetection element, for example, pulsed light having sensitivity of the photodetection element is irradiated to the object, and the pulsed light reflected by the object is made incident on the photodetection element, whereby information on the distance to the object can be obtained.

In the light detection device of one aspect of the present disclosure, the second voltage may also be a voltage at which the depletion layer reaches 100% of the thickness of the light absorbing layer from the cover layer side. This can improve sensitivity and responsiveness. In particular, it is effective for a structure in which light is incident from the semiconductor substrate side.

In the photodetection device according to the aspect of the present disclosure, the second voltage may be a voltage of 20V or less. This can more reliably improve the sensitivity and the responsiveness.

In the photodetection device according to the aspect of the present disclosure, the second voltage may be a voltage of 10V or less. This can more reliably improve the sensitivity and the responsiveness.

In the photodetection device according to the aspect of the present disclosure, the second voltage may be a voltage of 5V or less. This can more reliably improve the sensitivity and the responsiveness.

The photodetection device according to one aspect of the present disclosure may further include a light source that outputs a pulse having sensitivity to the light detection element. Thereby, as described above, information on the distance to the object can be obtained.

In the light detection device of one aspect of the present disclosure, the light source may also output pulsed light at a frequency of 10KHz or more. Accordingly, information on the distance to the object can be obtained appropriately.

ADVANTAGEOUS EFFECTS OF INVENTION

According to the present disclosure, a photodetecting element and a photodetecting device capable of realizing high-speed output control of a detection signal with a simple configuration can be provided.

Drawings

Fig. 1 is a configuration diagram of a light detection device according to an embodiment.

Fig. 2 is a structural diagram of the light detection unit shown in fig. 1.

Fig. 3 is a cross-sectional view of a portion of the light detecting element shown in fig. 2.

Fig. 4 is a cross-sectional view of a portion of the light detecting element shown in fig. 2.

Fig. 5 is a sequence diagram for obtaining information on the distance to the object.

Fig. 6 is a cross-sectional view of a part of a photodetector according to a modification.

Fig. 7 is another cross-sectional view of the photodetector according to the modification.

Fig. 8 is a cross-sectional view of a part of a photodetector according to a modification.

Fig. 9 is another cross-sectional view of the photodetector according to the modification.

Detailed Description

Embodiments of the present disclosure will be described in detail below with reference to the accompanying drawings. In the drawings, the same or corresponding portions are denoted by the same reference numerals, and redundant description will be omitted.

As shown in fig. 1, the light detection device 1 includes a light detection unit 2, a light source 3, a control unit 4, and a display unit 5. The light detection device 1 is a device that obtains a distance image of the object OJ (an image including information on the distance d to the object OJ) by an indirect TOF method.

As shown in fig. 2, the photodetection unit 2 includes a signal processing circuit (signal processing section) 6 and a photodetection element 10A. The signal processing circuit 6 includes a voltage signal generating circuit 61, a CMOS readout circuit 62, a vertical scanning circuit 63, a column circuit 64, a horizontal scanning circuit 65, an amplifier 66, and a timing generating circuit 67. In the present embodiment, the photodetector 10A is a back-illuminated InGaAs area sensor, and a bump is connected to the CMOS readout circuit 62.

The voltage signal generation circuit 61 generates a pulse voltage signal and applies it to the photodetection element 10A. The CMOS readout circuit 62 is configured by a plurality of charge amplifiers or the like, and when a detection signal is output from each pixel of the photodetection element 10A, a signal current is integrated in each charge amplifier.

The vertical scanning circuit 63 sequentially selects a plurality of charge amplifiers of the CMOS readout circuit 62 row by row. The column circuit 64 samples and holds the signal voltage integrated in each charge amplifier of the selected row together with the reset voltage. The horizontal scanning circuit 65 sequentially transfers the voltage difference between the signal voltage sampled and held in the column circuit 64 and the reset voltage to the amplifier 66.

The amplifier 66 amplifies a voltage difference between the signal voltage and the reset voltage sequentially transferred from the column circuit 64, and outputs the amplified voltage difference as an output voltage signal to the control section 4 (see fig. 1). The timing generation circuit 67 controls the operation timing of the voltage signal generation circuit 61, the vertical scanning circuit 63, and the horizontal scanning circuit 65. In the case of analog output, the amplifier 66 is provided, but in the case of digital output, an AD converter is provided instead of the amplifier 66.

As shown in fig. 3, the photodetector 10A includes an n-type (first conductivity type) semiconductor substrate 11, an n-type light absorbing layer 12, an n-type buffer layer 13, an n-type cap layer 14, and a plurality of p-type (second conductivity type) semiconductor regions 15. The light absorbing layer 12 is formed on the semiconductor substrate 11 by, for example, epitaxial growth. The relaxation layer 13 is formed on the light absorbing layer 12 by, for example, epitaxial growth. The cap layer 14 is formed on the relaxation layer 13 by, for example, epitaxial growth.

The relaxation layer 13 is composed of a plurality of layers 13a, 13b, and 13c, and is formed between the light absorbing layer 12 and the cap layer 14. The band gaps of the respective layers 13a, 13b, and 13c are set so as to mitigate the difference between the band gap of the light absorbing layer 12 and the band gap of the cap layer 14. The relaxation layer 13 may be formed of 1 layer if the difference between the band gap of the light absorbing layer 12 and the band gap of the cap layer 14 can be relaxed. By providing the relaxation layer 13 in this way, the cap layer 14 can be formed more easily than in the case where the cap layer 14 is formed directly on the light absorbing layer 12.

A plurality of semiconductor regions 15 are formed in the cap layer 14, for example, by thermal diffusion, ion implantation, or the like. The plurality of semiconductor regions 15 are two-dimensionally (for example, in a matrix) arranged when viewed from the thickness direction of the semiconductor substrate 11. Each semiconductor region 15 is formed along the surface of the cap layer 14 on the opposite side to the semiconductor substrate 11, and is separated from the surface of the cap layer 14 on the semiconductor substrate 11 side. Each semiconductor region 15 forms a pn junction with the cap layer 14, and constitutes each pixel P. A depletion layer D1 is formed around each semiconductor region 15. The semiconductor region 15 has a size of 1 × 10, for example¹⁷cm^-3An impurity region having the above impurity concentration.

In the present embodiment, the semiconductor substrate 11 has a thickness of 0.5 to 5 × 10¹⁸cm^-3(e.g., 1X 10)¹⁸cm^-3Left and right) carrier concentration n⁺An InP substrate and a thickness of 150 to 300 [ mu ] m (e.g., about 200 [ mu ] m). The light absorption layer 12 has a thickness of 3 to 10 x 10¹⁴cm^-3(e.g., 5X 10)¹⁴cm^-3Left and right) carrier concentration n^-An InGaAs layer and having a thickness of 1 to 5 μm (e.g., about 2 μm). The buffer layer 13 has a thickness of 0.3 to 5 x 10¹⁵cm^-3(e.g., 1X 10)¹⁵cm^-3Left and right) carrier concentration n^-An InGaAs layer and having a thickness of 0.1 to 0.6 μm (e.g., about 0.2 μm). The cover layer 14 has a thickness of 0.3 to 5 × 10¹⁵cm^-3(e.g., 1X 10)¹⁵cm^-3Left and right) carrier concentration n^-An InP layer and a thickness of 1 to 2 μm (e.g., about 1.5 μm). Each semiconductor region 15 has 0.1 to 10 x 10¹⁸cm^-3(e.g., 1X 10)¹⁸cm^-3About) a p + region of carrier concentration and has a thickness of 0.1 to 1 μm (e.g., about 0.5 μm).

The photodetection element 10A further includes a plurality of first electrodes 16 and a plurality of second electrodes 17. The first electrode 16 and the second electrode 17 are formed on the insulating film 18, and the insulating film 18 is formed on the surface of the cap layer 14 opposite to the semiconductor substrate 11. The first electrode 16 and the second electrode 17 are formed of, for example, Ti, Pt, Cr, Ni, Au, an alloy thereof, or the like. The insulating film 18 is, for example, a silicon nitride film, a silicon oxide film, or the like.

Each of the first electrodes 16 extends in a trench (or a via hole) formed in the light absorbing layer 12, the relaxation layer 13, the cap layer 14, and the insulating film 18, and electrically contacts the light absorbing layer 12, the relaxation layer 13, and the cap layer 14. The trench (or via hole) is formed in such a manner as not to affect the depletion layer D1. Each second electrode 17 extends in an opening (or a via hole) formed in the insulating film 18, and is in electrical contact with each semiconductor region 15. Since the first electrode 16 functions as a common electrode, at least one first electrode 16 may be provided for a plurality of pixels P. Since the second electrodes 17 function as individual electrodes, it is necessary to provide one second electrode 17 for each pixel P. Further, if the trench (or via hole) extending from each first electrode 16 is formed so as not to affect the depletion layer D1, it can reach any one of the semiconductor substrate 11, the light absorbing layer 12, the relaxation layer 13, and the cap layer 14.

The light absorbing layer 12, the relaxation layer 13, and the cap layer 14 are provided with a pixel separation section 20. The pixel separation portion 20 extends so as to pass between the adjacent pixels P (i.e., so as to pass between the adjacent semiconductor regions 15). When the plurality of semiconductor regions 10a are arranged in a matrix, the pixel separation portions 20 extend in a lattice shape.

The pixel separation section 20 is configured by forming a p-type semiconductor region 22 along the inner surface of the trench 21 formed in the light absorbing layer 12, the relaxation layer 13, and the cap layer 14. A depletion layer D2 is formed around the semiconductor region 22. The pixel separation portion 20 (i.e., the trench 21 and the semiconductor region 22) reaches the side face of the light detecting element 10A, and the semiconductor region 22 is short-circuited at the side face. The inner surface of the trench 21 is covered with the insulating film 18.

In each pixel P, the depletion layer D1 formed around the semiconductor region 15 does not reach the light absorbing layer 12 when a reverse bias (non-biased state) is not applied between the first electrode 16 and the second electrode 17. On the other hand, when a 20V reverse bias is applied between the first electrode 16 and the second electrode 17, as shown in fig. 4, the depletion layer D1 is located at a position exceeding 80% of the thickness of the light absorbing layer 12 from the cap layer 14 side (a position 80% of the thickness of the light absorbing layer 12 from the surface of the light absorbing layer 12 on the cap layer 14 side). Further, "applying and not applying a reverse bias between the first electrode 16 and the second electrode 17" is synonymous with "applying and not applying a reverse bias to a pn junction formed by the semiconductor region 15 and the cap layer 14" (the same applies hereinafter).

In the present embodiment, since the first electrode 16 is an n-type side electrode and the second electrode 17 is a p-type side electrode, a reverse bias is applied between the first electrode 16 and the second electrode 17 so that the potential of the first electrode 16 is set as a reference and the potential of the second electrode 17 is-20V. In the present embodiment, as shown in fig. 3, the depletion layer D1 reaches the layer 13c of the relaxation layer 13 in the unbiased state, and if the depletion layer D1 does not reach the light absorbing layer 12 in the unbiased state, it may reach the other layers 13a and 13b of the relaxation layer 13, or may not reach the relaxation layer 13 (that is, may be accommodated in the cap layer 14).

Here, setting of various parameters of the light detection element 10A will be described. When the depletion layer D1 reaches the layer 13c of the relaxation layer 13 in the unbiased state, if the semiconductor region 15 is assumed to be in a one-sided abrupt junction (one-sided abrupt junction), the reverse bias V required for the depletion layer D1 to reach the light absorbing layer 12 is expressed by equation (1).

[ formula 1 ]

In formula (1), W1 is the distance between the depletion layer D1 and the surface on the light absorbing layer 12 side in the layer 13c, W2 is the thickness of the layer 13b, and W3 is the thickness of the layer 13 a. ε r1 is the relative permittivity of layer 13c,. epsilon.r 2 is the relative permittivity of layer 13b, and ε r3 is the relative permittivity of layer 13 a. N1 is the carrier concentration of layer 13c, N2 is the carrier concentration of layer 13b, and N3 is the carrier concentration of layer 13 a. q is the charge and ε 0 is the electrical constant.

Therefore, when a reverse bias is not applied between the first electrode 16 and the second electrode 17, the condition that the depletion layer D1 does not reach the light absorbing layer 12 is expressed by equation (2).

[ formula 2 ]

In the case where the depletion layer D1 reaches the layer 13c of the relaxation layer 13 in the unbiased state, if the semiconductor region 15 is assumed to be in a single-sided abrupt junction state, the reverse bias required for the depletion layer D1 to reach a position X% of the thickness of the light absorbing layer 12 from the cap layer 14 side (a position X% of the thickness of the light absorbing layer 12 from the surface of the light absorbing layer 12 on the cap layer 14 side with reference to the surface) is expressed by equation (3). In the formula (3), Wab is the thickness of the light absorbing layer 12, ∈ rab is the relative permittivity of the light absorbing layer 12, and Nab is the carrier concentration of the light absorbing layer 12.

[ formula 3 ]

Therefore, when a reverse bias of 20V is applied between the first electrode 16 and the second electrode 17, the condition that the depletion layer D1 exceeds 80% of the thickness of the light absorbing layer 12 from the cap layer 14 side is expressed by equation (4).

[ formula 4 ]

In the present embodiment, various parameters of the photodetection element 10A are set so as to satisfy the expressions (2) and (4). In particular, in the present embodiment, when a reverse bias of 5V is applied between the first electrode 16 and the second electrode 17, the depletion layer D1 reaches a position 100% of the thickness of the light absorbing layer 12 from the cap layer 14 side. That is, in the present embodiment, various parameters of the photodetection element 10A are set so as to satisfy the expression (5).

[ FORMULA 5 ]

When the depletion layer D1 does not reach the relaxation layer 13 (i.e., is contained in the cap layer 14) in the unbiased state, the term of the cap layer 14 may be added to the right side of the expressions (1) to (5). In this case, when the relaxation layer 13 is not present, the term of the relaxation layer 13 may be subtracted on the right side of the expressions (1) to (5). As described above, terms corresponding to the respective layers may be added or subtracted to the right side of expressions (1) to (5) depending on the layer structure of the photodetector 10A and the like.

As shown in fig. 1, the light source 3 outputs pulsed light L having sensitivity of the light detecting element 10A (i.e., photoelectric conversion can occur in the light detecting element 10A) at a frequency of 10KHz or more. In the present embodiment, the light source 3 is, for example, an infrared LED or the like, and outputs pulsed light L having a wavelength of about 1.5 μm. The pulsed light output from the light source 3 is irradiated to the object OJ, and the pulsed light L reflected by the object OJ is incident on the light detection element 10A. The control unit 4 controls the light detection unit 2 and the light source 3, generates a distance image of the object OJ based on the output voltage signal output from the light detection unit 2, and displays the distance image on the display unit 5.

As described above, in the photodetection element 10A, if a reverse bias is not applied between the first electrode 16 and the second electrode 17, since the depletion layer D1 does not reach the light absorbing layer 12, even if carriers (electrons and holes) are generated in the light absorbing layer 12 by incidence of the pulsed light L, no current flows between the first electrode 16 and the second electrode 17. That is, for example, by not applying a reverse bias between the first electrode 16 and the second electrode 17, the signal processing circuit 6 can be prevented from outputting the detection signal from the photodetection element 10A. On the other hand, if a reverse bias of 20V is applied between the first electrode 16 and the second electrode 17, since the depletion layer D1 exceeds 80% of the thickness of the light absorbing layer 12 from the cap layer 14 side, when carriers are generated in a region where the depletion layer D1 expands in the light absorbing layer 12 by incidence of pulsed light L, a current flows between the first electrode 16 and the second electrode 17. That is, for example, by applying a reverse bias between the first electrode 16 and the second electrode 17, the signal processing circuit 6 can be caused to output a detection signal from the photodetecting element 10A. Here, the potential difference of 20V is a potential difference that does not easily affect the design of the signal processing circuit 6 at the subsequent stage, and is a potential difference that can be modulated at a high speed of the order of tens of ns. Therefore, according to the photodetection element 10A, high-speed output control of the detection signal can be realized with a simple configuration.

In particular, in the photodetector 10A, when a reverse bias of 5V is applied between the first electrode 16 and the second electrode 17, the depletion layer D1 reaches a position 100% of the thickness of the light absorbing layer 12 from the cap layer 14 side. Since the photodetector 10A is a back-illuminated area sensor that causes light to enter from the semiconductor substrate 11 side, the depletion layer D1 reaches the surface of the light-incident side of the light-absorbing layer 12 by applying a reverse bias of 5V, which is effective in improving sensitivity and responsiveness.

The avalanche photodiode is also an element that detects light by applying reverse bias, but basically differs from the photodetector 10A in that it requires a potential difference of, for example, 50V as reverse bias. In the avalanche photodiode, an electric field suppression layer is formed between the light absorption layer and the cap layer to increase the electric field intensity applied to the cap layer formed with the multiplication layer and to decrease the electric field intensity applied to the light absorption layer. In contrast, in the photodetection element 10A, an electric field suppression layer is formed between the light absorbing layer 12 and the cap layer 14 to reduce the electric field intensity applied to the cap layer 14 and increase the electric field intensity applied to the light absorbing layer 12. The potential difference of 50V is a potential difference that easily affects the design of a circuit at a subsequent stage such as CMOS, and is a potential difference that cannot be modulated at a high speed on the order of tens of ns.

In the photodetector 10A, an n-type relaxation layer 13 is formed between the light absorbing layer 12 and the cover layer 14. This allows carriers generated in the region where the depletion layer D1 diffuses in the light absorbing layer 12 to smoothly move.

In the photodetector 10A, the plurality of semiconductor regions 15 are two-dimensionally arranged in the cap layer 14 when viewed from the thickness direction of the semiconductor substrate 11. Thereby, a distance image of the object OJ can be obtained.

In the photodetector 10A, the light absorbing layer 12, the relaxation layer 13, and the cover layer 14 are provided with a pixel separation portion 20. This can suppress the occurrence of crosstalk between adjacent pixels P. Even if carriers are generated in the light absorbing layer 12 in the non-biased state, the carriers are captured by the depletion layer D2 formed around the semiconductor region 22. Therefore, when switching from the non-biased state to the reverse-biased state, the carriers generated in the light absorbing layer 12 in the non-biased state can be suppressed from becoming noise.

In the photodetector 10A, the carrier concentration of each of the light absorbing layer 12, the buffer layer 13, and the cap layer 14 is 1 × 10¹⁶cm^-3The following. Thus, by applying a reverse bias of a potential difference of 20V or less, the depletion layer D1 can be smoothly diffused in the light absorbing layer 12.

Further, the photodetection device 1 includes: a photodetecting element 10A, a signal processing circuit 6 which applies a pulse voltage signal between the first electrode 16 and the second electrode 17 and obtains a detection signal output from the photodetecting element 10A, and a light source 3 which outputs pulsed light L with sensitivity of the photodetecting element 10A at a frequency of 10KHz or more. Thereby, as in the calculation example described next, information on the distance d to the object OJ can be obtained appropriately.

An example of calculating the distance d to the object OJ will be described with reference to fig. 5. In fig. 5, there is shown: intensity signal I of pulsed light L output from light source 3_OUTIntensity signal I of pulsed light L reflected by object OJ and incident on photodetection element 10A_INAnd a pulse voltage signal V1 applied to the photodetecting element 10A (specifically, between the first electrode 16 and the second electrode 17) in the first stage_INIn the second stage, the pulse voltage signal V2 applied to the photodetection element 10A_INAnd a pulse voltage signal V3 applied to the photodetecting element 10A in the third stage_IN. In this calculation example, one arbitrary pixel P is noted.

In the first stage, inIntensity signal I_OUTOutputting pulsed light L from the light source 3 and applying a pulse voltage signal V1 to the light detecting element 10A_INUnder the state of (1), the output voltage signal V1 is obtained_OUT. Intensity signal I_OUTThe pulse width T of (1) is set in accordance with the distance to be measured, for example, in a manner of 30ns (measurable distance: 4.5m), 40ns (measurable distance: 6.0m), or 60ns (measurable distance: 9.0 m). Pulse voltage signal V1_INThe first voltage V is such that the depletion layer D1 does not reach the light absorbing layer 12_LAnd depletion layer D1 to reach second voltage V of light absorbing layer 12_HVoltage signals which are repeated alternately and are period, pulse width and phase and intensity signals I_OUTThe same voltage signal. A first voltage V_LIn this embodiment, 0V. A second voltage V_HThe voltage is a voltage at which the depletion layer D1 reaches 100% of the thickness of the light absorbing layer 12 from the cap layer 14 side, and is 5V in the present embodiment. At this time, since the photodetecting element 10A outputs the detection signal only during the period in which the second voltage VH is applied, the voltage signal V1 is output_OUTCorresponding to the intensity signal I_INPulse and pulse voltage signal V1_INThe integrated value of the charge amount Q1 at the mutually overlapped portions of the pulses.

In the second stage, the intensity signal I is applied_OUTPulse light L is output from the light source 3 and a bias voltage signal V2 is applied to the light detecting element 10A_INUnder the state of (1), the output voltage signal V2 is obtained_OUT. Except for the point shifted in phase by 180 DEG, the pulse voltage signal V2_INIs related to the pulse voltage signal V1_INThe same voltage signal. At this time, since the photodetecting element 10A outputs the detection signal only during the period in which the second voltage VH is applied, the voltage signal V2 is output_OUTCorresponding to the intensity signal I_INPulse and pulse voltage signal V2_INThe integrated value of the charge amount Q2 at the mutually overlapped portions of the pulses.

In the third stage, no pulsed light L is output from the light source 3 and the bias voltage signal V3 is applied to the light detecting element 10A_INUnder the state of (1), the output voltage signal V3 is obtained_OUT. At this time, since the photodetecting element 10A is only applying the second voltage V_HDuring the period ofOutputs a detection signal, so that if there is ambient light, a voltage signal V3 is output_OUTIntensity signal and pulse voltage signal V3 corresponding to ambient light_INThe integrated value of the amount of electric charge of the mutually overlapped portions of the pulses.

When the above first, second, and third stages are performed for each pixel P, the control unit 4 controls the output voltage signal V1 for each pixel P_OUT、V2_OUT、V3_OUTTo calculate the distance d to the object OJ. The distance d is represented by formula (6). In the formula (6), c is the speed of light.

[ formula 6 ]

As described above, in the photodetection device 1, the photodetection element 10A can be caused to perform the switching operation (modulation operation) in the order of several tens of nanoseconds. In the photodetector 1, each output voltage signal V1_OUT、V2_OUTSecond voltage V_HThe voltage is a voltage at which the depletion layer D1 reaches 100% of the thickness of the light absorbing layer 12 from the cap layer 14 side. This can suppress detection of carriers generated in the region where depletion layer D1 is not diffused in light-absorbing layer 12 as a delay component, and can suppress deterioration in calculation accuracy of distance D. In the photodetection device 1, the light source 3 is a light source that emits pulsed light L having a wavelength of about 1.5 μm, and the photodetection element 10 is an InGaAs area sensor having sufficient sensitivity to the pulsed light L having a wavelength of about 1.5 μm. This makes it easy to obtain a distance image of the object OJ even in fog or smoke, for example. The above calculation example is only an example, and information on the distance d to the object OJ may be obtained by various well-known calculations. The second voltage VH may be a voltage of 20V or less (preferably a voltage of 10V or less, and more preferably a voltage of 5V or less). In this case, the photodetection device 1 can more reliably improve sensitivity and responsiveness.

The present disclosure is not limited to the above-described embodiments. For example, the photodetecting element 10A may be configured as a linear sensor in which the semiconductor regions 15 are one-dimensionally arranged in the cap layer 14. Fig. 6 and 7 show a photodetector 10B configured as a back-illuminated InGaAs linear sensor. Fig. 6 is a cross-sectional view of a part of the photodetection element 10B along a plane parallel to the arrangement direction of the plurality of semiconductor regions 15 (hereinafter, simply referred to as "arrangement direction"), and fig. 7 is a cross-sectional view of the photodetection element 10B along a plane perpendicular to the arrangement direction.

The photodetector 10B is different from the photodetector 10A mainly in the following points: the n-type relaxation layer 13 and the p-type semiconductor region 23 are not formed between the light absorbing layer 12 and the cap layer 14. In the photodetector 10B, as shown in fig. 7, the width of the cap layer 14 is smaller than the width of the semiconductor substrate 11 in a width direction (hereinafter, simply referred to as "width direction") perpendicular to both the thickness direction and the arrangement direction of the semiconductor substrate 11, and the width of the light absorbing layer 12 is equal to the width of the semiconductor substrate 11. The semiconductor region 23 is formed along a surface on which the cap layer 14 is not formed, of the side surfaces of the cap layer 14 that face each other in the width direction and the surface of the light absorbing layer 12 on the side opposite to the semiconductor substrate 11. The semiconductor region 23 is covered with the insulating film 18.

In the photodetector 10B, as shown in fig. 8 and 9, when a reverse bias of 20V is applied only between the first electrode 16 and the second electrode 17, the depletion layer D1 is located at a position exceeding 80% of the thickness of the light absorbing layer 12 from the cap layer 14 side. Therefore, according to the photodetector 10B, similarly to the photodetector 10A, high-speed output control of the detection signal can be realized with a simple configuration.

In the photodetector 10B, carriers generated in the light absorbing layer 12 are captured in a non-biased state not only by the depletion layer D2 formed around the semiconductor region 22 of the pixel separating portion 20 but also by the depletion layer D3 formed around the semiconductor region 23. Therefore, when switching from the non-biased state to the reverse-biased state, the carriers generated in the light absorbing layer 12 in the non-biased state can be suppressed from becoming noise.

In the photodetector 10B, the width of the cover layer 14 is smaller than the width of the semiconductor substrate 11 in the width direction. This can suppress the carriers generated in the region around the pn junction region (the region of the pixel P) from becoming noise. In addition, each of the width of the light absorbing layer 12 and the width of the cap layer 14 may be smaller than the width of the semiconductor substrate 11 in the width direction. In this case, it is possible to more reliably suppress the carriers generated in the region around the pn junction region from becoming noise.

In the photodetector 10A shown in fig. 3, the n-type relaxation layer 13 may not be formed between the light absorbing layer 12 and the cover layer 14. In contrast, in the photodetector 10B shown in fig. 6 and 7, the n-type relaxation layer 13 may not be formed between the light absorbing layer 12 and the cover layer 14. If the relaxation layer 13 is not formed and the light absorbing layer 12 and the cap layer 14 are in contact with each other, the reverse direction bias required for the depletion layer D1 from the position exceeding at least 50% of the thickness of the light absorbing layer 12 on the cap layer 14 side can be reduced. In the photodetector 10B shown in fig. 6 and 7, when the relaxation layer 13 is formed between the light absorbing layer 12 and the cover 14, the width of the relaxation layer 13 and the width of the cover 14 may be smaller than the width of the semiconductor substrate 11 in the width direction, or the width of the light absorbing layer 12, the width of the relaxation layer 13, and the width of the cover 14 may be smaller than the width of the semiconductor substrate 11 in the width direction. In these cases, it is possible to more reliably suppress the carriers generated in the region around the pn junction region from becoming noise.

In the photodetection element 10A shown in fig. 3, the pixel separation section 20 may not be provided. Similarly, the photodetection element 10B shown in fig. 6 and 7 may not be provided with the pixel separation section 20. In the photodetector 10B shown in fig. 6 and 7, the semiconductor region 23 may not be formed.

In any of the photodetection elements 10A and 10B, when a 20V reverse bias is applied between the first electrode 16 and the second electrode 17, the depletion layer D1 may be located at a position exceeding 50% of the thickness of the light absorbing layer 12 from the cap layer 14 side (a position 50% of the thickness of the light absorbing layer 12 from the surface of the light absorbing layer 12 on the cap layer 14 side). The position at which the depletion layer D1 is diffused from the cap layer 14 side to the light absorbing layer 12 in the range of 50% to 100% of the thickness by applying a reverse bias of 20V is determined depending on the wavelength of light to be detected, the incident direction of light to be detected, and the like.

In addition, either one of the photodetection elements 10A and 10B may be configured as a surface-incident type. In this case, the first electrode 16 is formed on the surface of the semiconductor substrate 11 opposite to the light absorbing layer 12, for example. Further, the second electrode 17 is formed with, for example, an opening for allowing light to be detected to enter the light absorbing layer 12. In the case where each of the photodetecting elements 10A and 10B is configured as a surface-incident type, the band gap of the layer provided closer to the light incident side than the light absorbing layer 12 is preferably larger than the band gap of the light absorbing layer 12 from the viewpoint of suppressing light absorption in the layer. Even when the photodetection elements 10A and 10B are configured as the back-illuminated type, the band gap of the layer provided closer to the light incident side than the light absorbing layer 12 is preferably larger than the band gap of the light absorbing layer 12 in view of suppressing dark current.

In any of the photodetection elements 10A and 10B, the conductivity types of p-type and n-type may be reversed from those described above. In this case, since the first electrode 16 is a p-type side electrode and the second electrode 17 is an n-type side electrode, a reverse bias is applied between the first electrode 16 and the second electrode 17 so that the potential of the first electrode 16 is a reference and the potential of the second electrode 17 is a positive potential. Further, as described above, when the semiconductor substrate 11, the light absorbing layer 12, the relaxation layer 13, and the cap layer 14 are of the n-type and the semiconductor region 15 is of the p-type, the photodetecting elements 10A and 10B can be manufactured easily.

In either of the photodetection elements 10A and 10B, layers having different compositions may be formed between the light absorbing layer 12 and the cover layer 14 or within the cover layer 14 so that the semiconductor region 15 is reliably accommodated in the cover layer 14 at the time of manufacturing. In either of the photodetection elements 10A and 10B, an ultra-thin layer having a high carrier concentration may be formed between the light absorbing layer 12 and the cap layer 14 so that the depletion layer D1 does not reach the light absorbing layer 12 due to variations in manufacturing or the like, even when the depletion layer D1 is in a non-biased state. In either of the photodetection elements 10A and 10B, a contact layer for reducing contact resistance with the electrode may be formed on the cap layer 14.

In addition, either of the photodetection elements 10A and 10B may be configured as a single element in which one semiconductor region 15 is formed in the cap layer 14. In this case, high-speed detection signal output control can be realized with a simple configuration. In this case, the configuration of the photodetection device 1 also makes it possible to obtain information on the distance d to the object OJ.

The material and shape are not limited to those described above, and various materials and shapes can be applied to the respective structures of the photodetection elements 10A and 10B. For example, the materials of the photodetection elements 10A and 10B are not limited to compound semiconductors, and may be organic semiconductors, amorphous materials, and the like. In addition, each configuration in the above-described one embodiment or modification can be arbitrarily applied to each configuration in the other embodiment or modification.

The light detection device 1 may not include the light source 3. As the photodetection device 1 in such a case, an infrared image sensor or the like having a global shutter operation (high-speed shutter operation) necessary for detecting a high-speed object or signal is exemplified.

Description of the symbols

1 … … light detection device

3 … … light source

6 … … Signal processing Circuit (Signal processing section)

10A, 10B … … photodetector

11 … … semiconductor substrate

12 … … light absorbing layer

13 … … buffer layer

14 … … cover layer

15 … … semiconductor region

16 … … first electrode

17 … … second electrode

D1 … … depletion layer.