阅读说明：本技术 用于等离子体处理腔室的导热间隔件 (Thermally conductive spacers for plasma processing chambers ) 是由 朴范洙 R·L·迪纳 吴桑贞 古田学 艾伦·K·刘 李建恒 赵来 崔寿永 吉万·普拉 于 2019-09-04 设计创作，主要内容包括：本公开内容的方面涉及用于在等离子体处理腔室的盖组件内使用的导热间隔件。在一个实施方式中,等离子体处理腔室包括腔室主体和盖组件,所述盖组件耦接至所述腔室主体,从而限定处理空间。所述盖组件包括耦接至所述腔室主体的背板,以及具有从中穿过而形成的多个气体开口的扩散器。所述盖组件还包括设置在所述背板与所述扩散器之间的导热间隔件,以将热从所述扩散器传递至所述背板。所述等离子体处理腔室包括设置在所述处理空间内的基板支撑件。(Aspects of the present disclosure relate to thermally conductive spacers for use within a lid assembly of a plasma processing chamber. In one embodiment, a plasma processing chamber includes a chamber body and a lid assembly coupled to the chamber body to define a processing volume. The lid assembly includes a backing plate coupled to the chamber body and a diffuser having a plurality of gas openings formed therethrough. The lid assembly also includes a thermally conductive spacer disposed between the backing plate and the diffuser to transfer heat from the diffuser to the backing plate. The plasma processing chamber includes a substrate support disposed within the processing volume.)

1. A plasma processing chamber, comprising:

a chamber body;

a lid assembly coupled to the chamber body defining a processing volume, the lid assembly comprising:

a backing plate coupled to the chamber body;

a diffuser including a plurality of gas openings formed therethrough; and

a thermally conductive spacer disposed between the backing plate and the diffuser to transfer heat from the diffuser to the backing plate; and

a substrate support disposed within the processing volume.

2. The plasma processing chamber of claim 1, wherein the thermally conductive spacer directly contacts a top surface of the diffuser, the plurality of gas openings extend from the top surface to a bottom surface of the diffuser, and the thermally conductive spacer comprises a rectangular cross-section.

3. The plasma processing chamber of claim 1, wherein the thermally conductive spacer comprises a plurality of inner faces that partially surround the plurality of gas openings.

4. The plasma processing chamber of claim 1, further comprising a plurality of fasteners extending at least partially through the thermally conductive spacer to couple the thermally conductive spacer and the backing plate to the diffuser, wherein the thermally conductive spacer, the backing plate, the diffuser, and the plurality of fasteners each comprise aluminum.

5. The plasma processing chamber of claim 1, wherein the thermally conductive spacer comprises a pair of long sides disposed on opposite sides of a perimeter of the diffuser.

6. The plasma processing chamber of claim 5, wherein each of the pair of long sides of the thermally conductive spacer comprises a set of one or more thermally conductive spacer bars spaced apart by a distance, wherein a longitudinal length of each set of one or more thermally conductive spacer bars is greater than the distance.

7. The plasma processing chamber of claim 5, wherein each of the pair of long sides of the thermally conductive spacer comprises two or more thermally conductive spacers and one or more gaps between the two or more thermally conductive spacers.

8. The plasma processing chamber of claim 1, further comprising an RF power source coupled to the lid assembly, and a gas source and a remote plasma source in fluid communication with the processing volume through the lid assembly, wherein the backing plate comprises a cooling flow channel formed therein to receive a coolant, and the thermally conductive spacer is vertically aligned with at least a portion of the cooling flow channel.

9. A lid assembly for a plasma processing chamber, comprising:

a back plate;

a diffuser including a plurality of gas openings formed therethrough; and

a thermally conductive spacer disposed between the backing plate and the diffuser to transfer heat from the diffuser to the backing plate.

10. The lid assembly of claim 9, wherein the thermally conductive spacer partially surrounds the plurality of gas openings, the thermally conductive spacer comprising two or more sides, each of the two or more sides comprising a set of one or more thermally conductive spacer bars.

11. The lid assembly of claim 10, wherein the two or more sides are disposed on opposite sides of a perimeter of the diffuser and are spaced apart by a distance, and each set of one or more thermally conductive spacer bars has a longitudinal length greater than the distance.

12. The lid assembly of claim 9, further comprising a cover plate, wherein the backing plate is coupled to the cover plate, wherein the backing plate, the diffuser, and the thermally conductive spacer each comprise aluminum.

13. The cap assembly of claim 9, wherein:

the thermally conductive spacer directly contacts a top surface of the diffuser;

the thermally conductive spacer comprises a rectangular cross-section;

the backing plate includes a cooling flow channel formed therein to receive a coolant; and

the thermally conductive spacer is vertically aligned with at least a portion of the cooling flow channel.

14. A backing plate apparatus for a plasma processing chamber, comprising:

a back plate comprising a top surface and a bottom surface; and

a thermally conductive spacer comprising one or more protrusions protruding from the bottom surface of the backplate, the thermally conductive spacer being integrally formed with the backplate to form a body.

15. The backplane apparatus of claim 14, wherein the backplane and the thermally conductive spacer each comprise aluminum.

Technical Field

Aspects of the present disclosure generally relate to systems and apparatuses for substrate processing. More particularly, aspects of the present disclosure relate to thermally conductive spacers for use within a lid assembly of a plasma processing chamber.

Background

Plasma processing, such as Plasma Enhanced Chemical Vapor Deposition (PECVD), may be employed to deposit thin films on substrates to form electronic devices. As technology advances, the complexity of device geometries and structures formed on substrates continues to increase.

In addition, the demand for electronic devices, such as larger displays and solar panels, is also increasing, and in turn, the size of the substrates used to manufacture such devices is also increasing. Therefore, manufacturing processes, such as large area PECVD processes, must be continually improved in order to meet the increasingly difficult demands for obtaining uniformity and desired film properties.

One challenge faced in large area PECVD processing is plasma non-uniformity within the plasma processing chamber. Various factors and elements, such as heat, may cause the plasma within the plasma processing chamber to bow in the region near the edge of the substrate. This bending of the plasma results in uneven processing of the substrate.

Another challenge is the inefficiency associated with cleaning rates. Lower cleaning rates result in longer times to clean the components of the process chamber, thereby affecting throughput, operating costs, and efficiency.

Accordingly, there is a need for an apparatus that facilitates improving the uniformity of a deposition process performed in a plasma processing chamber and that facilitates improving the cleaning rate of the plasma processing chamber.

Disclosure of Invention

The present disclosure generally relates to an apparatus for plasma processing. More particularly, the present disclosure relates to an apparatus for providing plasma uniformity over the surface of a substrate during processing while facilitating low cleaning rates.

In one embodiment, a plasma processing chamber includes a chamber body and a lid assembly coupled to the chamber body to define a processing volume. The lid assembly includes a backing plate coupled to the chamber body and a diffuser having a plurality of gas openings formed therethrough. The lid assembly also includes a thermally conductive spacer disposed between the backing plate and the diffuser to transfer heat from the diffuser to the backing plate. The plasma processing chamber includes a substrate support disposed within the processing volume.

In one embodiment, a lid assembly for a plasma processing chamber includes a backing plate and a diffuser having a plurality of gas openings formed therethrough. The lid assembly also includes a thermally conductive spacer disposed between the backing plate and the diffuser to transfer heat from the diffuser to the backing plate.

In one embodiment, a backing plate apparatus for a plasma processing chamber includes a backing plate having a top surface and a bottom surface. Implementing a backplane apparatus also includes a thermally conductive spacer having one or more protrusions protruding from the bottom surface of the backplane. The thermally conductive spacer is integrally formed with the backplate to form a body.

Drawings

So that the manner in which the above recited features of the present disclosure can be understood in detail, a more particular description of the disclosure, briefly summarized above, may be had by reference to embodiments, some of which are illustrated in the appended drawings. It is to be noted, however, that the appended drawings illustrate only exemplary embodiments and are therefore not to be considered limiting of its scope, for the disclosure may admit to other equally effective embodiments.

Fig. 1 is a schematic cross-sectional view illustrating a plasma processing chamber according to an embodiment.

Fig. 2 is a schematic exploded perspective view illustrating a cap assembly according to an embodiment.

Fig. 3 is a schematic exploded perspective view illustrating a cap assembly according to an embodiment.

Fig. 4 is a schematic exploded perspective view illustrating a cap assembly according to an embodiment.

Fig. 5A is a schematic exploded perspective view illustrating a cap assembly according to an embodiment.

FIG. 5B is a perspective cross-sectional view illustrating the cap assembly shown in FIG. 5A according to one embodiment.

FIG. 5C is a schematic cross-sectional view illustrating the cap assembly shown in FIG. 5A according to an embodiment.

To facilitate understanding, identical reference numerals have been used, where possible, to designate identical elements that are common to the figures. It is contemplated that elements and features of one embodiment may be beneficially incorporated in other embodiments without further recitation.

Detailed Description

The present disclosure generally relates to an apparatus and method for processing a substrate. In one aspect, a plasma processing chamber is provided that includes a chamber body and a lid assembly to define a processing volume within the plasma processing chamber. The lid assembly includes a backing plate, a diffuser, and a thermally conductive spacer disposed between and coupled to the backing plate and the diffuser. A substrate support is also disposed within the processing volume. The thermally conductive spacer is used to transfer heat from the diffuser to the backing plate. As such, the thermally conductive spacer is in direct contact with the top surface of the diffuser, and the thermally conductive spacer is formed of or includes a thermally conductive material. The thermally conductive spacer has a rectangular cross section, wherein the width of the thermally conductive spacer is equal to, greater than, or less than the thickness of the diffuser. The plasma processing chamber further includes an RF power source coupled to the lid assembly, and a gas source and a remote plasma source in fluid communication with the processing volume through the lid assembly.

The aspects described herein may be used with any type of deposition process and are not limited to use with substrate plasma processing chambers. Aspects described herein may be used with masks and substrates of various types, shapes, and sizes. Further, the substrate is not limited to any particular size or shape. In one aspect, for example, the term "substrate" refers to any polygonal, square, rectangular, curved, or other circular or non-circular workpiece used in the manufacture of flat panel displays, such as glass or polymer substrates.

In the following description, unless otherwise specified, "gas" and "gases" are used interchangeably and refer to one or more precursors, reactants, catalysts, carrier gases, purge gases, cleaning gases, effluents, combinations thereof, and any other fluids.

Aspects disclosed herein are illustratively described below with reference to a PECVD system configured to process large area substrates, such as a PECVD system available from AKT, a subsidiary of Applied Materials, Inc., of Santa Clara, Calif. However, it should be understood that embodiments may be used in other system configurations, such as etching systems, other chemical vapor deposition systems, and any other system that requires distribution of gases within a processing chamber, including those systems configured to process circular substrates.

Fig. 1 is a schematic cross-sectional view illustrating a plasma processing chamber 100 according to an embodiment. The plasma processing chamber 100 may be used to perform a deposition process for an encapsulation layer by a PECVD process. It should be noted that the chamber 100 of fig. 1 is merely an exemplary apparatus that may be used to form electronic devices on a substrate. One suitable chamber for a PECVD process is available from applied materials, inc. It is contemplated that embodiments may be practiced using other deposition chambers, including deposition chambers from other manufacturers.

The plasma processing chamber 100 generally includes a wall 102 and a bottom 104, the wall 102 and the bottom 104 defining a body 105 of the chamber 100. The body 105 and lid assembly 130 serve to define the processing volume 108. The lid assembly 130 includes a backing plate 106 and a gas distribution plate or diffuser 110. The diffuser 110 includes gas openings 124 formed through the diffuser 110 to introduce gases into the processing volume 108, and the diffuser 110 may also be referred to as a faceplate or showerhead. Diffuser 110 is coupled at its periphery to backing plate 106 by thermally conductive spacers 114. The thermally conductive spacer 114, discussed further below, is formed from or includes a thermally conductive material and is used to transfer heat from the diffuser 110 to the backing plate 106. The thermally conductive spacer 114 also serves to define a plenum 117 between the backing plate 106 and the diffuser 110. The plenum 117 defines a gap between the backing plate 106 and the diffuser 110.

In embodiments that may be combined with other embodiments, the plasma processing chamber 100 includes one or more diffuser skirts (skirts)133 disposed outside of the thermally conductive spacers 114. Diffuser skirt 133 is disposed between backing plate 106 and diffuser 110. In one example, the diffuser skirt 133 comprises one or more aluminum sheets. The thermally conductive spacers 114 and/or diffuser skirt 133 may be used, alone or in combination, to define the plenum 117. Diffuser skirt 133 and/or thermally conductive spacer 114 direct gas into and through gas openings 124. In one example, a diffuser skirt 133 is included, wherein the thermally conductive spacers 114 partially surround the outer perimeter of the plurality of gas openings 124 (e.g., as described with reference to fig. 4 and 5A below) to facilitate the introduction of gas into the gas apertures 124.

Precursor gases from the gas source 112 are provided to a plenum 117 through a conduit 116. Gas from the plenum 117 flows to the process volume 108 through the gas openings 124 of the diffuser 110. A remote plasma source 118, such as an inductively coupled remote plasma source, is coupled to the conduit 116. An RF (RF) power source 122 is coupled to the backing plate 106 and/or the diffuser 110 to provide RF power to the diffuser 110. The RF power source 122 is used to generate an electric field between the diffuser 110 and the substrate support 120. The electric field is used to form a plasma from the gas present between the diffuser 110 and the substrate support 120 within the processing volume 108. A variety of RF frequencies may be used, such as frequencies between about 0.3MHz and about 200 MHz. In one example, the RF power source 122 provides power to the diffuser 110 at a frequency of 13.56 MHz.

The backing plate 106 is placed on a cover plate 126, and the cover plate 126 is placed on the walls 102 of the chamber 100. A seal 128, such as an elastomeric O-ring, is provided between the wall portion 102 and the cover plate 126. The cover plate 126, the backing plate 106, and components coupled to the cover plate 126 and the backing plate 106, such as the diffuser 110, the thermally conductive spacers 114, and the conduits 116, may define a lid assembly 130. The lid assembly 130 may also include portions located thereon or attached thereto, such as the RF power source 122 and the remote plasma source 118. The cover assembly 130 may be removed from the main body 105, and the cover assembly 130 may be aligned with the main body 105 by indexing pins (indexing pins) 131.

Still referring to the plasma processing chamber 100 of FIG. 1, the processing volume 108 is accessed through a sealable slit valve opening 132 formed through the wall 102. Thus, the substrate 134 may be transferred into and out of the processing volume 108 through the slit valve opening 132. The substrate support 120 includes a substrate receiving surface 136 for supporting a substrate 134, wherein a rod 138 is coupled to a lift system 140 to raise and lower the substrate support 120.

A mask frame 142 is shown included in the chamber 100, wherein the mask frame 142 may be placed on the perimeter of the substrate 134 during processing. The mask frame 142 includes a plurality of mask screens coupled thereto, which include fine openings corresponding to devices or layers formed on the substrate 134. Substrate lift pins 144 are movably disposed through the substrate support 120 to move the substrate 134 to and from the substrate receiving surface 136 to facilitate transfer of the substrate. The substrate support 120 may also include heating and/or cooling components to maintain the substrate support 120 and the substrate 134 positioned thereon at a desired temperature.

The support member 148 is also shown at least partially disposed in the processing volume 108. The support members 148 may also serve as alignment and/or positioning devices for the mask frame 142. The support member 148 is coupled to a motor 150, the motor 150 operable to move the support member 148 relative to the substrate support 120 and, thus, position the mask frame 142 relative to the substrate 134. A vacuum pump 152 is coupled to the chamber 100 to control the pressure within the processing volume 108.

Between processing substrates, a cleaning gas from a cleaning gas source 119 may be provided to the remote plasma source 118. When energized, a remote plasma is formed, thereby generating dissociated cleaning gas species. A plasma of cleaning gas is provided to the processing volume 108 through the conduit 116 and through gas openings 124 formed in the diffuser 110 to clean components of the plasma processing chamber 100. Can be provided to flow through the diffuser 110The RF power source 122 further energizes the cleaning gas to reduce recombination of dissociated cleaning gas species. Suitable cleaning gases include, but are not limited to, nitrogen trifluoride (NF)₃) Fluorine gas (F)₂) And sulfur hexafluoride (SF)₆)。

Uniformity of plasma distribution is generally desirable during processing, pre-processing, and/or post-processing of substrate 134. The distribution of the plasma on the substrate 134 is determined by a variety of factors, such as the distribution of gases, the geometry of the processing volume 108, the distance between the lid assembly 130 and the substrate support 120, variations between deposition processes on the same substrate or different substrates, differences in deposition processes and cleaning processes, and even the current temperature of components included within the plasma processing chamber 100.

For example, the temperature of the diffuser 110 may increase with each subsequent and continuous or continuous use, particularly with an increase in the temperature difference between the edge or perimeter of the diffuser 110 and the center of the diffuser 110. The increased and/or uneven temperature of diffuser 110 may affect the plasma within processing volume 108 and the plasma distribution on substrate 134, resulting in an uneven thickness of the layer formed on substrate 134. Accordingly, the thermally conductive spacers 114 used to transfer heat from the diffuser 110 to the backing plate 106 may be able to transfer heat away from the diffuser 110 to promote more uniform plasma distribution across the substrate 134.

In one example, the thermally conductive spacers 114 facilitate maintaining the backplane 106 at a temperature of less than 110 degrees celsius during processing, such as in a range of 80 degrees celsius to 100 degrees celsius.

In one example, the thermally conductive spacers 114 facilitate maintaining the diffuser 110 at a temperature of less than 110 degrees celsius during processing, such as in a range of 80 degrees celsius to 100 degrees celsius.

In one example, the thermally conductive spacer 114 facilitates maintaining the substrate 134 at a temperature of less than 110 degrees celsius during processing, such as in a range of 80 to 105 degrees celsius. In one example, the thermally conductive spacer 114 facilitates maintaining the substrate 134 at a temperature of less than 95 degrees celsius during processing.

Fig. 2 is a schematic exploded perspective view illustrating a cap assembly 230 according to an embodiment. The lid assembly 230 may be similar to the lid assembly 130, may serve as at least a portion of the lid assembly 130, and may include one or more features, aspects, components, and/or characteristics similar to those described above for the lid assembly 130.

The lid assembly 230 includes a backing plate 206, a diffuser 210, and a thermally conductive spacer 214. As discussed above, the backing plate 206 includes a conduit 216 coupled or formed therethrough, the conduit 216 being coupled to one or more gas or plasma sources. The diffuser 210 includes gas openings 224 formed therethrough to distribute the contents (such as process gases and/or cleaning gases) from the conduit into the processing volume of the plasma processing chamber. The cap assembly 230 is shown to have a rectangular shape defined by a pair of parallel long sides L and a pair of parallel short sides S shorter than the parallel long sides L. The short side S and the long side L are perpendicular to each other. The cover assembly 230 may be other shapes, such as square, circular, oval, or other useful shapes, without departing from the scope of the present disclosure.

Thermally conductive spacers 214 are disposed between backing plate 206 and diffuser 210 and are coupled to backing plate 206 and diffuser 210. Thermally conductive spacers 214 are disposed about the perimeter of the diffuser 210 and define a plenum 217 between the backing plate 206 and the diffuser 210. For example, as best shown in fig. 2, the thermally conductive spacer 214 includes a pair of long sides 214A and a pair of short sides 214B that correspond to the long sides L and the short sides S of the lid assembly 230 such that the thermally conductive spacer 214 is disposed at the periphery of the diffuser 210. Each long side 214A includes a long thermally conductive spacer 215A. Each short side 214B includes a short thermally conductive spacer bar 215B that is shorter than the long thermally conductive spacer bar 215A.

The thermally conductive spacers 214 are used to facilitate heat transfer from the diffuser 210 to the backing plate 206. The thermally conductive spacers 214 are in direct contact with the backing plate 206 and the diffuser 210 to facilitate heat transfer. The thermally conductive spacer 214 includes a bottom surface 262 and a top surface 264. The bottom surface 262 is in direct contact with the top surface 266 of the diffuser 210 and the top surface 264 is in direct contact with the bottom surface 268 of the backing plate 206. Backplate 206 can also include a step 270 formed in bottom surface 268 of backplate 206 to define an inner face 272 and an outer face 274 on bottom surface 268. The thermally conductive spacer 214 is shown in direct contact with the perimeter of the inner face 272 of the backplate 206. However, the present disclosure is not limited thereto, as the bottom surface 268 may not have the step 270 formed therein, or may be substantially flat.

The thermally conductive spacers 214 are disposed at the perimeter of the diffuser 210 to completely surround the gas openings 224. Each of the long thermally conductive spacer bars 215A and the short thermally conductive spacer bars 215B includes an inner face 215C facing the center 290 of the diffuser 210 and the center 292 of the backing plate 206. The inner face 215C defines an inner perimeter of the thermally conductive spacer 214 that completely surrounds the outer perimeter 211 of the gas opening 224 of the diffuser 110. The outer perimeter 211 is defined by the outer edge of the gas opening 224 relative to the center 290 of the diffuser 110. The inner perimeter defined by the inner face 215C is disposed outboard of the outer perimeter 211 relative to the center 290 of the diffuser 210.

Fig. 3 illustrates a schematic exploded perspective view of a cap assembly 330 according to an embodiment. The lid assembly 330 may be similar to the lid assembly 130, may serve as at least a portion of the lid assembly 130, and may include one or more features, aspects, components, and/or characteristics similar to those described above for the lid assembly 130. The lid assembly 330 includes a thermally conductive spacer 314, the thermally conductive spacer 314 being disposed about a periphery of the inner face 272. The thermally conductive spacers 314 are disposed about the perimeter of the top surface 266 of the diffuser 210. The thermally conductive spacer 314 includes two opposing long sides 314A corresponding to the long sides L and two opposing short sides 314B corresponding to the short sides S. The thermally conductive spacer 314 includes two or more thermally conductive spacer bars 318 disposed on each long side 314A and each short side 314B. Fig. 3 shows two thermally conductive spacer bars 318, which two thermally conductive spacer bars 318 are arranged on each long side 314A and each short side 314B. The thermally conductive spacer 314 also includes optional thermally conductive spacer bars 320 disposed between the thermally conductive spacer bars 318. Thermally conductive spacer bars 318 and 320 are removably attached to inner face 272 of bottom surface 268 of backplate 206. The pair of long sides 314A and the pair of short sides 314B correspond to the pair of long sides and the pair of short sides, respectively, of the perimeter of the top surface 266 of the diffuser 210.

Each thermally conductive spacer 318 and 320 disposed on long side 314A includes a longitudinal length that is less than the length of the long side and the length of long side L of the perimeter of top surface 266. Each of the thermally conductive spacer bars 318 and 320 disposed on the short side 314B includes a longitudinal length that is less than the length of the short side and the length of the short side S of the perimeter of the top surface 266. The longitudinal length of each of the thermally conductive spacer bars 318 and 320 disposed on long side 314A is parallel to the long side of the perimeter of top surface 266. The longitudinal length of each of the thermally conductive spacer bars 318 and 320 disposed on the short side 314B is parallel to the short side of the perimeter of the top surface 266.

In one example, the longitudinal length of each thermally conductive spacer 318 and 320 disposed on each long side 314A and short side 314B is less than the length of the short side of the perimeter of the top surface 266.

Thermally conductive spacer bars 318 and 320 are disposed in a rectangular pattern on the perimeter of the inner face 272 and the perimeter of the top surface 266. In one example, optional thermally conductive spacer bars 320 are not included such that gaps are provided between the thermally conductive spacer bars 318 in place of the optional thermally conductive spacer bars 320. In such an example, thermally conductive spacer bars 318 are provided to partially cover each long side and each short side of the perimeter of the top surface 266, as shown in fig. 3. In examples including optional thermally conductive spacer bars 320, the thermally conductive spacer bars 318 and 320 may be disposed to completely cover each long side and each short side of the perimeter of the top surface 266.

Aspects of thermally conductive spacer 314 facilitate modular design of thermally conductive spacer 314, backing plate 206, and diffuser 210. Modularity facilitates promoting deposition uniformity, deposition repeatability, and cleaning rates. Modularity facilitates improving the throughput, deposition quality, and operating efficiency of a substrate processing chamber. Modularity also facilitates reducing or eliminating effects associated with thermal expansion of components, such as rubbing components having different thermal expansions. In addition, the modularity facilitates quickly changing the rate of heat transfer from the diffuser 210, such as by adding and/or removing one or more thermally conductive spacer bars 318 and/or thermally conductive spacer bars 320.

Fig. 4 is a schematic exploded perspective view illustrating a cap assembly 430 according to an embodiment. The lid assembly 430 includes a thermally conductive spacer 414. The lid assembly 430 may be similar to the lid assembly 130, may serve as at least a portion of the lid assembly 130, and may include one or more features, aspects, components, and/or characteristics similar to those described above for the lid assembly 130. The thermally conductive spacer 414 includes two sides 414A disposed on opposite long sides of the perimeter of the top surface 266. Each of the two sides 414A includes one or more thermally conductive spacer bars (a first set of one or more thermally conductive spacer bars 418A and a second set of one or more thermally conductive spacer bars 418B). In fig. 4, each set of thermally conductive spacer bars 418A, 418B is shown with three thermally conductive spacer bars. Each set of thermally conductive spacer bars 418A, 418B corresponds to one of the long sides L and is parallel to one of the long sides L. Each set of thermally conductive spacer bars 418A, 418B includes a longitudinal length that is less than the length of the long side of the perimeter of the top surface 266 and the length of the long side L. The center point of first set of thermally conductive spacer bars 418A is offset from the center point of second set of thermally conductive spacer bars 418B. First set of thermally conductive spacer bars 418A are offset such that first set of thermally conductive spacer bars 418A and second set of thermally conductive spacer bars 418B are at different distances from center 292 of backplane 206. The thermally conductive spacer bars 418A, 418B each include an inner face 415C facing the center 290 of the diffuser 210 and the center 292 of the backing plate 206. The inner face 415C is on an opposite side of the outer perimeter 211 of the gas opening 224. The inner face 415C of the thermally conductive spacer 414 partially surrounds the outer perimeter 211 such that the thermally conductive spacer does not completely surround the outer perimeter 211. The first and second sets of thermally conductive spacer bars 418A, 418B are disposed outside the outer perimeter 211 of the gas opening 224 relative to the center 290 of the diffuser 210. Gaps are provided at the short sides of the perimeter of the top surface 266 and between the first and second sets of thermally conductive spacer bars 418A, 418B.

First and second sets of thermally conductive spacer bars 418A, 418B of opposing sides 414A are disposed to partially cover each of the long sides of the perimeter of top surface 266, as shown in fig. 4.

Fig. 5A is a schematic exploded perspective view illustrating a cap assembly 530 according to an embodiment. The lid assembly 530 includes a thermally conductive spacer 514. The lid assembly 530 may be similar to the lid assembly 130, may serve as at least a portion of the lid assembly 130, and may include one or more features, aspects, components, and/or characteristics similar to those described above for the lid assembly 130. Thermally conductive spacer 514 includes sides 514A disposed on opposite long sides of the perimeter of top surface 266. Each side 514A includes one or more thermally conductive spacer bars (first and second thermally conductive spacer bars 518A and 518B). Each thermally conductive spacer 518A, 518B corresponds to and is parallel to one of the long sides L. Each thermally conductive spacer bar 518A, 518B of the opposing side 514A includes a longitudinal length that is greater than the length of the short side of the perimeter of the top surface 266 and the length of the short side S. First thermally conductive spacer bar 518A of one side 514A is spaced a distance D from second thermally conductive spacer bar 518B of the other side 514A. The longitudinal length of each thermally conductive spacer 518A, 518B is greater than distance D.

The center point of first thermally conductive spacer 518A is aligned with the center point of second thermally conductive spacer 518B with respect to the center 292 of backplane 206. The thermally conductive spacer bars 518A, 518B each include an inner face 515C facing the center 290 of the diffuser 210 and the center 292 of the backing plate 206. The inner face 515C is on an opposite side of the outer perimeter 211 of the gas opening 224. An inner face 515C of the thermally conductive spacer 514 partially surrounds the outer perimeter 211 such that the thermally conductive spacer 514 does not completely surround the outer perimeter 211. The first and second thermally conductive spacer bars 518A, 518B are disposed outside the outer perimeter 211 of the gas opening 224 relative to the center 290 of the diffuser 210. A gap is provided at the short side of the perimeter of the top surface 266 and between the first and second thermally conductive spacer bars 518A, 518B.

Thermally conductive spacer bars 518A, 518B of opposing sides 514A are provided to completely cover the respective long sides of the perimeter of top surface 266, as shown in fig. 5A.

FIG. 5B is a perspective cross-sectional view illustrating the cap assembly 530 shown in FIG. 5A, according to one embodiment. Figure 5C is a schematic cross-sectional view illustrating the cap assembly 530 shown in figure 5A, according to one embodiment. The first thermally conductive spacer 518A of the thermally conductive spacer 514 is shown as having a rectangular cross-section, although the thermally conductive spacer 514 is not so limited and other shapes may be used as the cross-section of the thermally conductive spacer. The thermally conductive spacers 514 may be sized to facilitate heat transfer from the diffuser 210 to the backing plate 206. The first thermally conductive spacer 518A of the thermally conductive spacer 514 is shown as having a height H and a width W. Further, while the thickness T of the diffuser 210 may vary, the diffuser 210 is shown as having a thickness T. For example, the diffuser 210 may have an increased thickness near the perimeter or edges and a decreased thickness near the center. The thermally conductive spacer 514 is shown as having a width W that is equal to or greater than the thickness T of the diffuser 210 (particularly the perimeter of the diffuser 210). The width W may be less than the thickness T. The thermally conductive spacer 514 may also have a height H that is equal to or greater than the thickness T of the diffuser 210. The height H may be less than the thickness T.

Such as an increased width W and/or height H of the thermally conductive spacer 514 relative to the diffuser 210, may increase the thermal contact between the thermally conductive spacer 514 and the diffuser 210 and facilitate the transfer of heat from the diffuser 210 to the thermally conductive spacer 514. In one example, the width W is 1.0 inch or greater, such as from 1.0 inch to 1.5 inches. In one example, the width W is 1.5 inches.

The thermally conductive spacer 514 is formed of, or includes, a thermally conductive material, such as a metal. Examples of thermally conductive metals include copper, nickel, steel, and aluminum. The backing plate 206 is formed of or includes a metal, such as aluminum, and similarly, the diffuser 210 is formed of or includes a metal, such as aluminum. Accordingly, the thermally conductive spacer 514, the backing plate 206, and the diffuser 210 may each be formed of aluminum.

In one example, as shown in fig. 5B and 5C, one or both of the thermally conductive spacer bars 518A, 518B of the thermally conductive spacer 514 are integrally formed with the backplate 206, forming a body with the backplate 206. Thermally conductive spacer 514 and backplane 206 are part of the backplane apparatus. Thermally conductive spacer bars 518A, 518B are bumps that protrude from bottom surface 268 of backplate 206, such as from inner face 272 of bottom surface 268. The thermally conductive spacer bars 518A, 518B each include a bottom surface 562, and this bottom surface 562 is in direct contact with the top surface 266 of the diffuser 210. Thermally conductive spacers 514, which are integrally formed with back plate 206, reduce the number of separate components, thereby contributing to reduced cost and reduced likelihood of particle generation. The gas openings 224 extend from the top surface 266 to the bottom surface 265 of the diffuser 210.

The second thermally conductive spacer 518B of the thermally conductive spacer 514 may include one or more aspects, components, features, and/or characteristics of the first thermally conductive spacer 518A described above.

The backing plate 206 may include one or more cooling flow channels 280 formed therein, such as to receive a coolant. The cooling flow channels 280 are configured to transfer heat away from the backing plate 206 via a coolant flowing through the cooling flow channels 280. Fig. 5B and 5C illustrate cooling flow channels 280 formed in the top surface 282 of the backing plate 206. Thus, heat transferred from the diffuser 210 to the backing plate 206 through the thermally conductive spacers 514 is subsequently transferred out of the backing plate 206 through the cooling flow channels 280. The coolant may include water, ethylene glycol, and the likeUnder the trade name of (a) or any other suitable coolant.

In one example, the thermally conductive spacer 514 is aligned with at least a portion of the cooling flow channel 280, such as vertically aligned. For example, as shown in fig. 5B, the thermally conductive spacers 514 and the cooling flow channels 280 are aligned with each other along a line a that passes perpendicularly through the cooling flow channels 280, the backing plate 206, the thermally conductive spacers 514, and the diffuser 210. The vertical alignment 514 of the thermally conductive spacers 514 and the cooling flow channels 280 facilitates heat transfer from the thermally conductive spacers 514 and away from the backing plate 206 through the cooling flow channels 280.

One or more fasteners 276 are used to couple the thermally conductive spacer 514 between the backing plate 206 and the diffuser 210. For example, as shown in FIG. 5C, fasteners 276 extend from the diffuser 210, at least partially through the thermally conductive spacers 514, and to the backing plate 206 to couple the thermally conductive spacers 514 between the backing plate 206 and the diffuser 210. One or more fasteners 276 couple the thermally conductive spacer 514 and the backing plate 206 to the diffuser 210. The fasteners 276 may include screws, bolts and nuts as shown, and/or any other fastener known in the art. The fastener 276 may be formed of or include a thermally conductive material, such as a metal, and particularly aluminum. The diffuser 210 includes a cover 293, such as an aluminum cover, disposed under each of the one or more fasteners. A seal 295, such as an O-ring seal, is disposed between the thermally conductive spacer 514 and the diffuser 210. The seal 295 facilitates suppression of particles generated by, for example, thermal expansion of the components.

As described above, according to the thermally conductive spacer of the present disclosure, heat can be transferred away from a diffuser within a plasma processing chamber. For example, in a plasma processing chamber without a thermally conductive spacer, the temperature of the diffuser may rise from about 75 ℃ to about 120 ℃ after multiple successive depositions and uses of the plasma processing chamber. In contrast, in a plasma processing chamber having a thermally conductive spacer according to the present disclosure, it is believed that the temperature of the diffuser only rises from about 75 ℃ to about 90 ℃ or about 100 ℃ after the same multiple successive depositions and uses of the plasma processing chamber. Thus, the thermally conductive spacer is believed to facilitate the transfer of heat from about 20 ℃ to about 30 ℃ away from the diffuser. Such a reduction in heat and temperature of the diffuser makes it possible to increase the uniformity of plasma distribution within the processing space of the plasma processing chamber, thereby increasing the uniformity of the thickness of a layer formed on a substrate with such a plasma processing chamber.

The temperature of the diffuser and the temperature uniformity of the diffuser also promote relatively high cleaning rates, improved throughput, and operational efficiency while promoting deposition uniformity.

Aspects of the thermally conductive spacers 214, 314, 414, and 514 may include the following benefits: improved plasma distribution uniformity in the processing chamber; elevated deposition repeatability on the substrate; an increased deposition uniformity on the substrate; and an enhanced cleaning rate while promoting deposition uniformity. Such benefits may improve deposition quality, throughput of the processing chamber, and/or operating efficiency of the processing chamber.

The present disclosure contemplates that each lid assembly 130, 230, 330, 430, and/or 530 may include one or more aspects, features, characteristics, and/or components of the other lid assemblies 130, 230, 330, 430, and/or 530 described.

While the foregoing is directed to embodiments of the present disclosure, other and further embodiments of the disclosure may be devised without departing from the basic scope thereof, and the scope thereof is determined by the claims that follow.