阅读说明：本技术 用于bipv的透光薄膜电池及其制作方法 (Light-transmitting thin film battery for BIPV (building Integrated photovoltaics) and manufacturing method thereof ) 是由 郭凯 赵剑 张传升 韩青树 于 2019-11-21 设计创作，主要内容包括：本发明公开了一种用于BIPV的透光薄膜电池及其制作方法,利用激光刻线工艺对所述CIGS薄膜太阳能电池的钼背电极进行刻划,确定透光区域,并在组件完成后,将透光区域上的所有薄膜刻蚀形成透光区域。(The invention discloses a light-transmitting thin film cell for BIPV (building integrated photovoltaic) and a manufacturing method thereof.)

1. A light-transmitting thin-film battery for BIPV comprises a cuboid sub-battery strip and is characterized in that a plurality of light-transmitting areas are arranged on the sub-battery strip, and the sub-battery strip is divided into a plurality of sub-batteries by the light-transmitting areas; the light-transmitting areas arranged on the two sub-battery bands which are separated by one sub-battery band are parallel, and the light-transmitting areas arranged on the two adjacent sub-battery bands are separated in the extending direction which is vertical to the sub-batteries.

2. The light-transmissive thin film battery of claim 1, wherein the light-transmissive region is a hollowed-out region.

3. The light-transmissive thin-film cell of claim 1 or 2, wherein the width of the light-transmissive region is 0.5 to 1 times the width of the sub-cell.

4. The light-transmissive thin film battery of claim 1 or 2, wherein the light-transmissive regions provided on the two adjacent sub-battery strips have an interval length perpendicular to the extending direction of the sub-battery strips of 0.5-2 times the width of the sub-battery.

5. The light-transmissive thin film battery of any one of claims 1-4, wherein the sub-cells have a width of 2-5mm and a length of 15-25mm, the light-transmissive regions have a width of 2-5mm and a length of 5-21mm, and the light-transmissive regions on two adjacent sub-cell strips have a spacing of 2-5mm in a direction perpendicular to the extension direction of the sub-cell strips.

6. The light-transmitting thin-film cell according to any one of claims 1 to 5, wherein the light-transmitting thin-film cell comprises a transparent glass substrate, a back electrode layer, a CIGS absorbing layer, a CdS buffer layer, an i-ZnO layer and a transparent conductive glass layer, P3 grooves formed by a P3 scribing process are formed in the CIGS absorbing layer, the CdS buffer layer, the i-ZnO layer and the transparent conductive layer, and the P3 grooves divide the light-transmitting thin-film cell into cuboid sub-cell strips.

7. The light-transmissive thin film battery of any of claims 1-6, wherein the transparent glass substrate is soda lime glass; and/or, the back electrode is a Mo back electrode; and/or the transparent conducting layer is AZO.

8. The light-transmitting thin-film cell as claimed in any one of claims 1 to 7, wherein the transparent glass substrate has a thickness of 1 to 5mm, and/or the back electrode layer has a thickness of 0.2 to 1 μm, and/or the CIGS absorber layer has a thickness of 1 to 3 μm, and/or the CdS buffer layer and the i-ZnO layer have a thickness of 20 to 70nm, and/or the transparent conductive layer has a thickness of 600-1000 nm.

9. A method of fabricating a light-transmissive thin film battery as claimed in any one of claims 1 to 8, comprising the steps of:

s1, depositing a back electrode layer on the transparent glass substrate;

s2, scribing P1, and removing the back electrode layer at the position corresponding to the light-transmitting area;

s3, continuing to deposit the CIGS absorbing layer, the CdS buffer layer and the i-ZnO layer, and carrying out P2 scribing;

and S4, growing a transparent conductive layer, carrying out P3 scribing, and removing the CIGS absorption layer, the CdS buffer layer, the i-ZnO layer and the transparent conductive layer at the corresponding position of the light transmission region except for keeping the original P3 scribing to form the light transmission region.

10. Method according to claim 9, characterized in that the removal is by laser, preferably by 530 and 535nm laser.

Technical Field

The invention relates to the field of photovoltaics, in particular to a light-transmitting thin film battery for BIPV and a manufacturing method thereof.

Background

The current global photovoltaic market is mainly crystalline silicon solar cells, but the rapid consumption of energy resources caused by a high-energy-consumption production process cannot be borne by the society, and the larger-scale development of the photovoltaic industry is bound to be restricted. Therefore, the development of low-cost, new thin-film solar cells is a necessary trend in the future international photovoltaic industry. A CIGS (CuInxGa (1-x) Se2 short) thin-film solar cell is a chalcopyrite crystalline thin-film solar cell which is composed of four elements of Cu (copper), In (indium), Ga (gallium) and Se (selenium) In an optimal proportion, and the total thickness of the whole cell thin film is about 3-4 microns. The solar cell is low in cost, stable in performance and strong in radiation resistance, the photoelectric conversion efficiency of the solar cell is the first of various thin-film solar cells at present, the spectral response range is wide, the output power of the solar cell is higher than that of any other solar cell under the light intensity in rainy days, and the solar cell is called as one of the most promising solar cells of the next generation.

As shown in fig. 1 (in the figure, CIGS represents CIGS + CdS + i-ZnO), the current industrial processes of CIGS thin-film solar cells at home and abroad include sputtering a Mo layer, laser scribing a Mo (chemical element: molybdenum) layer, forming a CIGS absorber layer, forming a CdS (chemical name: cadmium sulfide) buffer layer, forming a zinc oxide layer, mechanically scribing a CIGS layer, sputtering aluminum-doped zinc oxide, mechanically scribing a CIGS absorber layer and a Transparent Conductive Oxide (TCO) layer, edge cleaning, packaging and testing. The method comprises the following steps of laser scribing a Mo layer, scribing a CIGS layer, cadmium sulfide CdS and ZnO, scribing an absorption layer and a transparent conducting layer, wherein the three scribing processes of the CIGS cell film surface are respectively called as follows: p1, P2, P3. The panel is divided into sub-cells connected in series by scribing.

BIPV (building Integrated photovoltaic), namely photovoltaic building integration, is a novel distributed photovoltaic power generation application. The BIPV organically integrates the photovoltaic module as a building component with a building, so that the building is attractive and safe in design, and the building is enabled to realize active energy conservation.

Since the thin film solar cell is opaque and can reduce the indoor brightness when used for replacing the existing glass curtain wall in the BIPV (building integrated photovoltaic), the application range of the BIPV is limited, and a method for manufacturing a light-transmitting BIPV module is mentioned in a manufacturing method of a BIPV thin film photovoltaic module with the publication (bulletin) number CN 103579408B. And certain areas are removed by adopting a laser scribing mode, so that the light transmittance of the BIPV assembly can be increased, and the application range of the BIPV is enlarged.

Disclosure of Invention

The invention aims to provide a light-transmitting BIPV (building integrated photovoltaics) module and a manufacturing method thereof.

The invention provides a light-transmitting thin-film battery for BIPV, which comprises a cuboid sub-battery strip, wherein a plurality of light-transmitting areas are arranged on the sub-battery strip, and the light-transmitting areas divide the sub-battery strip into a plurality of sub-batteries; the light-transmitting areas arranged on the two sub-battery bands which are separated by one sub-battery band are parallel, and the light-transmitting areas arranged on the two adjacent sub-battery bands are separated in the extending direction which is vertical to the sub-batteries.

According to some embodiments of the invention, the light transmissive region is a hollowed-out region.

According to some embodiments of the invention, the width of the light-transmitting region is 0.5 to 1 times the width of the sub-cell.

According to some embodiments of the invention, the light-transmitting regions provided on the two adjacent sub-battery bands are spaced apart from each other in a direction perpendicular to the extending direction of the sub-battery bands by a length of 0.5 to 2 times the width of the sub-battery.

According to some embodiments of the invention, the width of the sub-battery is 2-5mm, the length of the sub-battery is 15-25mm, the width of the light-transmitting area is 2-5mm, the length of the light-transmitting area is 5-21mm, and the length of the interval between the light-transmitting areas arranged on the two adjacent sub-battery strips in the direction perpendicular to the extending direction of the sub-battery strips is 2-5 mm.

According to some embodiments of the invention, the light-transmitting thin film cell comprises a transparent glass substrate, a back electrode layer, a CIGS absorption layer, a CdS buffer layer, an i-ZnO layer and a transparent conductive glass layer, wherein P3 grooves formed by a P3 scribing process are formed in the CIGS absorption layer, the CdS buffer layer, the i-ZnO layer and the transparent conductive layer, and the P3 grooves divide the light-transmitting thin film cell into cuboid sub-cell strips.

CdS is the N-type layer of the cell, and i-ZnO can improve the performance of the cell.

According to some embodiments of the invention, the transparent glass substrate is soda lime glass; and/or, the back electrode is a Mo back electrode; and/or the transparent conducting layer is AZO.

According to some embodiments of the present invention, the thickness of the transparent glass substrate is 1-5mm, and/or the thickness of the back electrode layer is 0.2-1 μm, and/or the thickness of the CIGS absorber layer is 1-3 μm, and/or the thicknesses of the CdS buffer layer and the i-ZnO layer are both 20-70nm, and/or the thickness of the transparent conductive layer is 600-1000 nm.

A second aspect of the present invention provides a method for manufacturing a light-transmitting thin-film battery according to the first aspect, including the steps of:

s1, depositing a back electrode layer on the transparent glass substrate;

s2, scribing P1, and removing the back electrode layer at the position corresponding to the light-transmitting area;

s3, continuing to deposit the CIGS absorbing layer, the CdS buffer layer and the i-ZnO layer, and carrying out P2 scribing;

and S4, growing a transparent conductive layer, carrying out P3 scribing, and removing the CIGS absorption layer, the CdS buffer layer, the i-ZnO layer and the transparent conductive layer at the corresponding position of the light transmission region except for keeping the original P3 scribing to form the light transmission region.

According to some embodiments of the invention, the removing is removing with a laser.

According to some embodiments of the present invention, the removing is performed with a 530-535nm laser.

The invention has the beneficial effects that:

the light-transmitting thin film cell for BIPV can increase the light-transmitting function of a CIGS cell module under the condition of having the power generation function, can be used for the areas such as windows in buildings and the like which have requirements on lighting, and can adjust the proportion of the light-transmitting areas.

Drawings

The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the principles of the invention and not to limit the invention. In the drawings:

fig. 1 is a schematic drawing of a prior art CIGS in a scribe line (cross-sectional view);

FIG. 2 is a cell structure (partial top view) according to one embodiment of the present invention;

FIG. 3 is an enlarged view of portion A of FIG. 2;

fig. 4-1 to 4-6 are schematic diagrams illustrating steps of a method for manufacturing a light-transmitting thin-film battery according to an embodiment of the invention.

Detailed Description

The present invention will be described in detail below with reference to the drawings and examples, but the present invention is not limited to the examples.

[ example 1 ]

A light-transmitting thin-film battery is shown in figure 2, each sub-battery is 4mm wide and 20mm long, a light-transmitting area is 4mm wide and 12mm long, and an overlapping area is 4mm long. The area ratio of the light-transmitting region was 37.5%.

The thickness of soda-lime glass of the light-transmitting thin-film battery is 3mm, the Mo back electrode layer is 0.5 mu m, the CIGS absorbing layer is 2 mu m, the CdS buffer layer and the i-ZnO layer are both 50nm, and the AZO layer is 800 nm.

[ example 2 ]

Manufacturing method of light-transmitting thin-film battery

First, as shown in FIG. 4-1, an 800nm Mo thin film (back electrode layer) was deposited on a 3mm glass (substrate).

P1 then lines (201), as shown in FIG. 4-2.

CIGS 2um (absorber layer), CdS 50nm (buffer layer), i-ZnO 50nm were then grown in sequence as shown in FIGS. 4-3.

P2 then lines (202), as shown in FIGS. 4-4.

Then, as shown in fig. 4-5, an AZO front electrode layer, 1um, was grown.

P3 is then scribed 203 as shown in fig. 4-6.

The non-cell areas (dashed lines in fig. 4-6) in the final pattern are then removed by laser ablation.

The width of the neutron cell is 3.8mm, the width of the light transmission area is 3.8mm, the length of the overlapping area is 2mm, and the light transmittance is 46.7%.

It should be noted that the above-mentioned embodiments are only for explaining the present invention, and do not constitute any limitation to the present invention. The present invention has been described with reference to exemplary embodiments, but the words which have been used herein are words of description and illustration, rather than words of limitation. The invention can be modified, as prescribed, within the scope of the claims and without departing from the scope and spirit of the invention. Although the invention has been described herein with reference to particular means, materials and embodiments, the invention is not intended to be limited to the particulars disclosed herein, but rather extends to all other methods and applications having the same functionality.