阅读说明：本技术 气体流速的传感装置及系统 (Gas flow rate sensing device and system ) 是由 不公告发明人 于 2020-12-25 设计创作，主要内容包括：本发明涉及气体流速的传感装置及系统,具体涉及气体流速检测领域。本申请提供的气体流速的传感装置,当需要对待测气体的流速进行检测时,较大的气体冲击在该压电材料层上,并通过压电材料层将压力传递到微纳结构层,由于微纳结构层和金属层之间依靠第一电极和第二电极支撑,在该金属层和该微纳结构层之间形成了形变空间,并且该微纳结构层中周期设置有多个孔洞,使得该微纳结构层在压力的作用下产生形变,并带动压电材料层形变,使得该压电材料层产生电流,电流通过该微纳结构层传递到该第一电极和第二电极上,通过该第一电极和第二电极测量得到该传感装置的电势变化情况,通过电势变化情况与气体流速的对应关系,得到该气体流速。(The invention relates to a gas flow velocity sensing device and a gas flow velocity sensing system, in particular to the field of gas flow velocity detection. When the gas flow velocity sensing device provided by the application needs to detect the flow velocity of the gas to be detected, larger gas impacts on the piezoelectric material layer, and transmits the pressure to the micro-nano structure layer through the piezoelectric material layer, because the micro-nano structure layer and the metal layer are supported by the first electrode and the second electrode, a deformation space is formed between the metal layer and the micro-nano structure layer, and a plurality of holes are periodically arranged in the micro-nano structure layer, so that the micro-nano structure layer deforms under the action of pressure, and drives the piezoelectric material layer to deform, so that the piezoelectric material layer generates current, the current is transmitted to the first electrode and the second electrode through the micro-nano structure layer, and measuring the potential change condition of the sensing device through the first electrode and the second electrode, and obtaining the gas flow rate through the corresponding relation between the potential change condition and the gas flow rate.)

1. A gas flow rate sensing device, said sensing device comprising: the structure comprises a substrate layer, a metal layer, a micro-nano structure layer, a first electrode, a second electrode and a piezoelectric material layer; the metal layer is arranged on one side of the substrate layer, the first electrode is electrically connected with one end, far away from one side of the substrate layer, of the metal layer, the micro-nano structure layer is arranged on one side, far away from the metal layer, of the first electrode and the second electrode, the piezoelectric material layer is arranged on one side, far away from the metal layer, of the micro-nano structure layer, a plurality of holes are periodically arranged in the micro-nano structure layer, each hole is internally provided with a planar chiral micro-nano structure, the planar chiral micro-nano structure is in a spiral structure, and the second electrode is electrically connected with the spiral center of the planar chiral micro-nano structure.

2. The gas flow rate sensing device according to claim 1, wherein the arm width of the planar chiral micro-nano structure of the helical structure is 160nm to 240 nm.

3. The gas flow rate sensing device according to claim 2, wherein the pitch of the planar chiral micro-nano structure of the helical structure is 20nm to 60 nm.

4. A gas flow rate sensing device according to claim 3, wherein the piezoelectric material is a composite piezoelectric material.

5. The gas flow rate sensing device according to claim 4, wherein the metal layer has a thickness of 40nm to 80 nm.

6. The device for sensing the gas flow rate according to any one of claims 1 to 5, wherein one side of the metal layer close to the micro-nano structure layer is a rough plane.

7. The gas flow rate sensing device according to claim 6, wherein the metal layer is provided with a protruding structure corresponding to the plurality of holes of the micro-nano structure layer.

8. The gas flow rate sensing device according to claim 7, wherein the metal layer is provided with a gas permeable hole.

9. A gas flow rate sensing system, comprising: the gas flow rate sensing device comprises a current detection device, a light source, a spectrometer and the gas flow rate sensing device as claimed in any one of claims 1 to 8, wherein the anode and the cathode of the current detection device are respectively and electrically connected with a first electrode and a second electrode of the sensing device and used for detecting current, the light source is used for generating and transmitting light to the sensing device, and the spectrometer is used for detecting the spectrum of emergent light of the sensing device.

Technical Field

The invention relates to the field of gas flow velocity detection, in particular to a gas flow velocity sensing device and system.

Background

Gaseous velocity of flow too big can lead to at the in-process of conveying gas, and pipeline pressure drop increases, leads to the starting point pressure to increase, the end pressure reduces, to the pipe wall friction, erode the increase of pipe wall, cause pipe wall, elbow attenuate, gaseous velocity of flow too big in addition produces static easily, arouses the conflagration, and gaseous velocity of flow undersize is difficult to realize reaction effect.

In the prior art, an infrared sensor is generally used for measuring the flow rate of gas in a pipeline, and in practical application, the infrared sensor is used for measuring the flow rate of gas in the pipeline, and the flow rate of gas is measured by detecting the fingerprint spectrum of the gas.

However, the infrared sensor in the prior art has low sensitivity, large volume, heavy weight, high cost and complex operation, and is difficult to meet the requirement of simply measuring the gas flow rate.

Disclosure of Invention

The present invention aims to provide a gas flow rate sensing device and system to solve the problems of low sensitivity, large size, heavy weight, high cost, complex operation and difficulty in meeting the requirement of simple measurement of gas flow rate of the infrared sensor in the prior art.

In order to achieve the above purpose, the embodiment of the present invention adopts the following technical solutions:

in a first aspect, the present application provides a sensing device for gas flow rate, the sensing device comprising: the structure comprises a substrate layer, a metal layer, a micro-nano structure layer, a first electrode, a second electrode and a piezoelectric material layer; the piezoelectric material layer is arranged on one side, away from the metal layer, of the micro-nano structure layer, a plurality of holes are periodically formed in the micro-nano structure layer, a planar chiral micro-nano structure is arranged in each hole, the planar chiral micro-nano structure is in a spiral structure, and the second electrode is electrically connected with the spiral center of the planar chiral micro-nano structure of the spiral structure.

Optionally, the arm width of the planar chiral micro-nano structure of the helical structure is 160nm to 240 nm.

Optionally, the pitch of the planar chiral micro-nano structure of the helical structure is 20nm to 60 nm.

Optionally, the piezoelectric material is a composite piezoelectric material.

Optionally, the metal layer has a thickness of 40nm to 80 nm.

Optionally, one side of the metal layer close to the micro-nano structure layer is a rough plane.

Optionally, a protruding structure corresponding to the plurality of holes of the micro-nano structure layer is arranged on the metal layer.

Optionally, the metal layer is provided with an air hole.

In a second aspect, the present application provides a gas flow rate sensing system comprising: the gas flow rate sensing device comprises a current detection device, a light source, a spectrometer and the gas flow rate sensing device of any item in the first aspect, wherein the anode and the cathode of the current detection device are respectively and electrically connected with a first electrode and a second electrode of the sensing device and used for detecting current, the light source is used for generating and transmitting light to the sensing device, and the spectrometer is used for detecting the spectrum of emergent light of the sensing device.

The invention has the beneficial effects that:

the application provides a sensing device of gas velocity of flow includes: the structure comprises a substrate layer, a metal layer, a micro-nano structure layer, a first electrode, a second electrode and a piezoelectric material layer; the metal layer is arranged on one side of the substrate layer, the first electrode is electrically connected with one end of one side of the metal layer, which is far away from the substrate layer, the micro-nano structure layer is arranged on one sides of the first electrode and the second electrode, which are far away from the metal layer, the piezoelectric material layer is arranged on one side of the micro-nano structure layer, a plurality of holes are periodically arranged in the micro-nano structure layer, a planar chiral micro-nano structure is respectively arranged in each hole, the planar chiral micro-nano structure is in a spiral structure, the second electrode is electrically connected with the spiral center of the planar chiral micro-nano structure of the spiral structure, when the flow velocity of gas to be detected needs to be detected, larger gas impacts on the piezoelectric material layer, and transmits pressure to the micro-nano structure layer through the piezoelectric material layer, and a deformation space is formed between the metal layer and the micro-nano structure layer due, and a plurality of holes are periodically arranged in the micro-nano structure layer, so that the micro-nano structure layer deforms under the action of pressure and drives the piezoelectric material layer to deform, the piezoelectric material layer generates current, the current is transmitted to the first electrode and the second electrode through the micro-nano structure layer, the potential change condition of the sensing device is obtained through the measurement of the first electrode and the second electrode, the gas flow velocity is obtained through the corresponding relation between the potential change condition and the gas flow velocity, when the measurement with higher accuracy of the gas flow velocity to be measured is needed, gas acts on the planar chiral micro-nano structure in the micro-nano structure layer, and as the planar chiral micro-nano structure is in a spiral structure, the planar chiral micro-nano structure deforms under the impact of the gas, so that the planar micro-nano structure is changed into a three-dimensional micro-nano structure, and when light irradiates on the spiral structure, light is at this helical structure after the deformation and the multiple reflection between the metal level, produce the plasmon coupling, detect the spectrum of the emergent light through this sensing device through the spectrum appearance, and the corresponding relation through the spectrum of this emergent light and the gas flow rate, obtain the gas flow rate that awaits measuring, this application is detected the gas flow rate and is divided into great velocity of flow, and less velocity of flow, improved the accuracy of measuring the gas flow rate, and set up to helical structure through receiving the chiral micro-nano structure in plane, the sensing device's of this application sensitivity and accuracy have further been improved.

Drawings

In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings needed to be used in the embodiments will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present invention and therefore should not be considered as limiting the scope, and for those skilled in the art, other related drawings can be obtained according to the drawings without inventive efforts.

Fig. 1 is a schematic structural view of a gas flow rate sensing device according to an embodiment of the present invention;

FIG. 2 is a cross-sectional view of a metal layer of a gas flow rate sensing device according to another embodiment of the present invention;

fig. 3 is a cross-sectional view of a metal layer of a gas flow rate sensing device according to another embodiment of the present invention.

Icon: 10-a substrate layer; 20-a metal layer; 21-a raised structure; 22-air holes; 30-a first electrode; 40-a second electrode; 50-micro-nano structure layer; 60-piezoelectric material layer.

Detailed Description

In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are one embodiment of the present invention, and not all embodiments. The components of embodiments of the present invention generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations.

Thus, the following detailed description of the embodiments of the present invention, presented in the figures, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.

It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, it need not be further defined and explained in subsequent figures.

In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings or the orientations or positional relationships that the products of the present invention are conventionally placed in use, and are only used for convenience in describing the present invention and simplifying the description, but do not indicate or imply that the devices or elements referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first," "second," "third," and the like are used solely to distinguish one from another and are not to be construed as indicating or implying relative importance.

Furthermore, the terms "horizontal", "vertical" and the like do not imply that the components are required to be absolutely horizontal or pendant, but rather may be slightly inclined. For example, "horizontal" merely means that the direction is more horizontal than "vertical" and does not mean that the structure must be perfectly horizontal, but may be slightly inclined.

In the description of the present invention, it should also be noted that, unless otherwise explicitly specified or limited, the terms "disposed," "mounted," "connected," and "connected" are to be construed broadly and may, for example, be fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.

In order to make the implementation of the present invention clearer, the following detailed description is made with reference to the accompanying drawings.

Fig. 1 is a schematic structural view of a gas flow rate sensing device according to an embodiment of the present invention; as shown in fig. 1, the present application provides a gas flow rate sensing device comprising: the structure comprises a substrate layer 10, a metal layer 20, a micro-nano structure layer 50, a first electrode 30, a second electrode 40 and a piezoelectric material layer 60; the metal layer 20 is arranged on one side of the substrate layer 10, the first electrode 30 is electrically connected with one end, far away from the substrate layer 10, of the metal layer 20, the micro-nano structure layer 50 is arranged on one side, far away from the metal layer 20, of the first electrode 30 and the second electrode 40, the piezoelectric material layer 60 is arranged on one side, far away from the metal layer 20, of the micro-nano structure layer 50, a plurality of holes are periodically formed in the micro-nano structure layer 50, a planar chiral micro-nano structure is arranged in each hole respectively, the planar chiral micro-nano structure is of a spiral structure, and the second electrode 40 is electrically connected with the spiral center of the planar chiral micro.

The utility model provides a sensing device of gas flow velocity is used for detecting the gas flow velocity, and the structure of this sensor includes by last to down in proper order: the piezoelectric material layer 60, the micro-nano structure layer 50, the metal layer 20 and the substrate layer 10 are generally rectangular, the piezoelectric material layer 60 is made of a piezoelectric material and is used for generating current under the action of pressure or deformation, the micro-nano structure layer 50 is provided with a plurality of holes, the holes are periodically arranged, the arrangement period of the holes is set according to actual needs, no specific limitation is made herein, for convenience of description, the arrangement period of the holes is 9 × 9, namely, the micro-nano structure layer 50 is provided with 81 specification holes, nine rows and nine columns are used for description, the holes can be oval or round, for convenience of description, the holes are round, the hole is internally provided with a planar chiral micro-nano structure, the planar chiral micro-nano structure is in a spiral structure, generally, the spiral center of the planar chiral micro-nano structure of the spiral structure is fixed, the spiral center of the planar chiral micro-nano structure of the spiral structure is electrically connected with the first electrode 30, the first electrode 30 can be directly electrically connected with the spiral center of the planar chiral micro-nano structure of the spiral structure, or the first electrode 30 is arranged at the bottom of the spiral center of the planar chiral micro-nano structure of the spiral structure, when acting force acts on the planar chiral micro-nano structure, the spiral structure deforms and is changed into a three-dimensional structure from a two-dimensional structure, the specific size of the spiral structure is set according to actual needs, no specific limitation is made herein, and the radius of the spiral structure is smaller than that of the hole in practical application, the sensing device of the gas velocity of flow of this application divide into two kinds of modes, mode one: when the flow velocity of the gas to be detected needs to be detected, the larger gas impacts on the piezoelectric material layer 60, and transmits the pressure to the micro-nano structure layer 50 through the piezoelectric material layer 60, since the micro-nano structure layer 50 and the metal layer 20 are supported by the first electrode 30 and the second electrode 40, a deformation space is formed between the metal layer 20 and the micro-nano structure layer 50, and a plurality of holes are periodically arranged in the micro-nano structure layer 50, so that the micro-nano structure layer 50 is deformed under the action of pressure, and drives the piezoelectric material layer 60 to deform, so that the piezoelectric material layer 60 generates a current, the current is transmitted to the first electrode 30 and the second electrode 40 through the micro-nano structure layer 50, measuring the potential change condition of the sensing device through the first electrode 30 and the second electrode 40, and obtaining the gas flow rate through the corresponding relation between the potential change condition and the gas flow rate; the corresponding relationship between the potential variation and the gas flow rate is obtained according to actual measurement, and is not specifically limited herein. And a second mode: when the accuracy of the flow velocity of the gas to be measured needs to be measured, the gas acts on a planar chiral micro-nano structure in the micro-nano structure layer 50, the planar chiral micro-nano structure of the spiral structure is deformed under the impact of the gas due to the fact that the planar chiral micro-nano structure is in a spiral structure, the planar micro-nano structure is changed into a three-dimensional micro-nano structure, when the light irradiates on the spiral structure, the light is reflected for multiple times between the deformed spiral structure and the metal layer 20 to generate plasmon coupling, the spectrum of emergent light passing through the sensing device is detected through a spectrometer, and the flow velocity of the gas to be measured is obtained through the corresponding relation between the spectrum of the emergent light and the flow velocity of the gas; the corresponding relation between the spectrum of the emergent light and the gas flow rate is obtained according to experimental detection, and is not described in detail herein; according to the gas flow velocity measuring device, the gas flow velocity is divided into a large flow velocity and a small flow velocity, the accuracy of gas flow velocity measurement is improved, and the sensitivity and the accuracy of the sensing device are further improved by setting the planar chiral micro-nano structure into a spiral structure.

Optionally, the arm width of the planar chiral micro-nano structure of the helical structure is 160nm to 240 nm.

The arm width of the spiral shape of the planar chiral micro-nano structure of the spiral structure can be 160nm, can also be 240nm, and can also be any size of 160nm-240 nm; optionally, the arm widths of the planar chiral micro-nano structures of the spiral structure are different, that is, the arm width at a position close to the spiral center is smaller, and the arm width far from the spiral center is larger, so that the arm width at a position close to the spiral center is 160nm, and the arm width far from the spiral heavy arm is 240 nm.

Optionally, the pitch of the planar chiral micro-nano structure of the helical structure is 20nm to 60 nm.

The pitch of the planar chiral micro-nano structure of the spiral structure can be 20nm or 60 nm; the size of the spiral structure can be any size of 20nm-60nm, optionally, the pitch of the planar chiral micro-nano structure of the spiral structure can be different, namely, the pitch close to the center of the spiral is smaller, the pitch far away from the center of the spiral is larger, the pitch close to the center of the spiral is 20nm, the pitch far away from the heavy arm of the spiral is 60nm, or the pitch close to the center of the spiral is larger, and the pitch far away from the center of the spiral is smaller.

Optionally, the piezoelectric material is a composite piezoelectric material.

Optionally, the metal layer 20 has a thickness of 40nm to 80 nm.

The thickness of the planar chiral micro-nano structure of the spiral structure can be 40nm, can also be 80nm, and can also be any size of the thickness of 40nm-80 nm.

Optionally, in practical application, in order to facilitate manufacturing, the arm width of the pitch is set to 200nm, the width of the pitch is set to 40nm, the thickness of the micro-nano structure layer 50 is set to 40nm, precision manufacturing of the structure is facilitated, better coupling is achieved after the pitch is changed, and generation of gas flow velocity deformation is facilitated.

Optionally, the planar chiral micro-nano structure arranged in the micro-nano structure layer 50 is a multi-arm planar chiral micro-nano structure, that is, the planar chiral micro-nano structure arranged in the micro-nano structure layer 50 may be a ten-thousand structure, a spiral structure, or other multi-arm planar chiral micro-nano structures.

Optionally, one side of the metal layer 20 close to the micro-nano structure layer 50 is a rough plane.

The distance between the micro-nano structure layer 50 and the metal layer 20 is reduced due to the arrangement of the protruding positions on the rough plane, charges can be gathered easily by the protrusions on the plane, surface plasmons on the lower plane are changed into local surface plasmons, the upper and lower local surface plasmons are strongly coupled, and the detection of the gas flow velocity is realized more easily.

FIG. 2 is a cross-sectional view of a metal layer of a gas flow rate sensing device according to another embodiment of the present invention; as shown in fig. 2, optionally, a protruding structure 21 corresponding to a plurality of holes of the micro-nano structure layer 50 is disposed on the metal layer 20.

Be provided with a plurality of protruding structures 21 on this metal level 20, every protruding structure 21 position all corresponds with the hole position in this micro-nano structure layer 50, make the gas that the velocity of flow is less lead to the coupling change of micro-nano structure layer 50 and metal level 20 less, be provided with a plurality of protruding structures 21 on the metal level 20, every protruding structure 21 position all corresponds with the hole position in this micro-nano structure layer 50, protruding setting on the metal level 20 makes the distance between micro-nano structure layer 50 and the metal level 20 diminish, the protruding easier gathering electric charge of metal level 20, make the surface plasmon on the plane below become local surface plasmon, upper and lower layer local surface plasmon takes place the strong coupling, realize the detection of gas velocity of flow more easily.

Fig. 3 is a cross-sectional view of a metal layer of a gas flow rate sensing device according to another embodiment of the present invention, and as shown in fig. 3, a vent hole 22 is optionally formed in the metal layer 20.

When the flow rate of gas to be measured is large, the micro-nano structure on the upper layer deforms under the action of large gas flow rate, the metal layer 20 below deforms slightly under the impact of the gas flow rate, part of reflected gas impacts the micro-nano structure layer 50 again to cause inaccurate measurement, the metal layer 20 is of a planar structure with holes, the air holes 22 are oval and circular, and the impact force of the gas is reduced to enable the gas to pass through quickly to increase the accuracy of measurement.

Optionally, the ventilation holes 22 in the metal layer 20 are one fourth of the whole metal layer 20, ensuring the integrity of the metal layer 20 under the impact of the gas flow rate. The hole structure on the plane changes the gathering mode of electric charge, makes the surface plasmon on the plane below become local surface plasmon, and upper and lower layer local surface plasmon takes place strong coupling, realizes the detection of gas velocity of flow more easily. The distance between the structures can be changed by changing the flow velocity of the gas, so that the coupling strength between the structures is changed, and the change of the flow velocity of the gas is detected through the change of the potential difference between two ends of the electrode detection structure.

The application provides a sensing device of gas velocity of flow includes: the structure comprises a substrate layer 10, a metal layer 20, a micro-nano structure layer 50, a first electrode 30, a second electrode 40 and a piezoelectric material layer 60; the metal layer 20 is arranged on one side of the substrate layer 10, the first electrode 30 and the second electrode 40 are respectively arranged at two ends of one side of the metal layer 20, which is far away from the substrate layer 10, the micro-nano structure layer 50 is arranged on one side of the first electrode 30 and the second electrode 40, which is far away from the metal layer 20, the piezoelectric material layer 60 is arranged on one side of the micro-nano structure layer 50, which is far away from the metal layer 20, a plurality of holes are periodically arranged in the micro-nano structure layer 50, a planar chiral micro-nano structure is respectively arranged in each hole, the planar chiral micro-nano structure is in a spiral structure, when the flow velocity of gas to be detected needs to be detected, a large gas impacts on the piezoelectric material layer 60, and transmits pressure to the micro-nano structure layer 50 through the piezoelectric material layer 60, and because the micro-nano structure layer 50 and the metal layer 20 are supported by the first electrode 30 and the, and a plurality of holes are periodically arranged in the micro-nano structure layer 50, so that the micro-nano structure layer 50 deforms under the action of pressure and drives the piezoelectric material layer 60 to deform, the piezoelectric material layer 60 generates current, the current is transmitted to the first electrode 30 and the second electrode 40 through the micro-nano structure layer 50, the potential change condition of the sensing device is obtained through measurement of the first electrode 30 and the second electrode 40, the gas flow rate is obtained through the corresponding relation between the potential change condition and the gas flow rate, when the measurement with higher accuracy of the gas flow rate to be measured is needed, gas acts on the planar chiral micro-nano structure in the micro-nano structure layer 50, and as the planar chiral micro-nano structure is in a spiral structure, the planar chiral micro-nano structure of the spiral structure deforms under the impact of the gas, so that the planar micro-nano structure is changed into a three-dimensional micro-nano structure, when the light shines on this helical structure, light is multiple reflection between this helical structure and the metal level 20 after the deformation, produce the plasmon coupling, detect the spectrum of the emergent light through this sensing device through the spectrum appearance, and the corresponding relation of the spectrum and the gas flow rate through this emergent light, obtain the gas flow rate that awaits measuring, this application divide into great velocity of flow with the gas flow rate, and less velocity of flow, the accuracy of measuring the gas flow rate has been improved, and through setting up the chiral micro-nano structure in plane into helical structure, the sensitivity and the accuracy of the sensing device of this application have further been improved.

The application provides a sensing system of gas velocity of flow, sensing system includes: the gas flow rate sensing device comprises a current detection device, a light source, a spectrometer and the gas flow rate sensing device of any one of the first aspect, wherein the anode and the cathode of the current detection device are respectively and electrically connected with a first electrode 30 and a second electrode 40 of the sensing device and are used for detecting current, the light source is used for generating and transmitting light to the sensing device, and the spectrometer is used for detecting the spectrum of emergent light of the sensing device.

When the required accuracy of measuring the gas flow rate is not very high, through measuring this current detection device, detect this sensing device's current condition, obtain the gas flow rate, when the required accuracy of measuring the gas flow rate is very high, shine this sensing device through the light source, detect reflection spectrum through the spectrum appearance, obtain the gas flow rate that the degree of accuracy is higher.

The above is only a preferred embodiment of the present invention, and is not intended to limit the present invention, and various modifications and changes will occur to those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.