阅读说明：本技术 掩膜版、其图形修正方法、存储介质及器件制备方法 (Mask, pattern correction method thereof, storage medium and device preparation method ) 是由 吴维维 谢翔宇 于 2021-01-19 设计创作，主要内容包括：本公开提供一种掩膜版、其图形修正方法、存储介质及器件制备方法,该掩膜版包括至少一个沿预设方向的倾斜阶梯状图案；其中,所述倾斜阶梯状图案包括分别位于所述倾斜阶梯状图案沿所述预设方向的两侧的第一阶梯状轮廓和第二阶梯状轮廓；所述第一阶梯状轮廓包括多个第一直角拐点,所述第二阶梯状轮廓包括多个第二直角拐点；所述倾斜阶梯状图案中,所述第一直角拐点和所述第二直角拐点交错设置。这种掩膜版的图案线宽易于控制,不仅可以提高光学邻近修正的一致性,而且可提高掩膜工艺的均一性和芯片图案的均一性。(The present disclosure provides a mask, a pattern correction method thereof, a storage medium and a device manufacturing method, the mask including at least one inclined step pattern along a preset direction; the inclined stepped pattern comprises a first stepped profile and a second stepped profile which are respectively positioned on two sides of the inclined stepped pattern along the preset direction; the first stepped contour comprises a plurality of first right angle inflection points, and the second stepped contour comprises a plurality of second right angle inflection points; in the inclined stepped pattern, the first right-angle inflection points and the second right-angle inflection points are alternately arranged. The pattern line width of the mask is easy to control, and the uniformity of optical proximity correction can be improved, and the uniformity of a mask process and the uniformity of chip patterns can be improved.)

1. A mask is characterized by comprising at least one inclined step-shaped pattern along a first preset direction;

the inclined stepped pattern comprises a first stepped profile and a second stepped profile which are respectively positioned on two sides of the inclined stepped pattern along the first preset direction;

the first stepped contour comprises a plurality of first right angle inflection points, and the second stepped contour comprises a plurality of second right angle inflection points;

in the inclined stepped pattern, the first right-angle inflection points and the second right-angle inflection points are alternately arranged.

2. The reticle of claim 1, wherein in the inclined stair-step pattern, a direction of extension of a connection line between the first straight corner points of any two even-numbered positions or any two odd-numbered positions is the same as the first preset direction;

in the inclined stepped pattern, an extending direction of a connection line between the second right-angle inflection points of any two even-numbered bits or any two odd-numbered bits is the same as the first preset direction.

3. The reticle of claim 1, wherein each step height of the first stepped profile is the same.

4. The reticle of claim 3, wherein each step height of the second stepped profile is the same.

5. The reticle of claim 4, wherein the step height of the first stepped profile is the same as the step height of the second stepped profile.

6. The reticle of claim 1, wherein the reticle has a plurality of the slanted step patterns, and each of the slanted step patterns is spaced apart from and parallel to each other;

the first stepped profiles of two adjacent inclined stepped patterns are aligned.

7. The reticle of claim 1, wherein the reticle has a plurality of the slanted step patterns, and each of the slanted step patterns is spaced apart from and parallel to each other;

the first stepped profiles of two adjacent inclined stepped patterns are arranged in a staggered manner.

8. The reticle of claim 7, wherein the first stepped profiles of each of the inclined stepped patterns are sequentially staggered along a second predetermined direction, and the staggered distance of the first stepped profiles of two adjacent inclined stepped patterns along the second predetermined direction is the same.

9. A pattern correction method of a mask is characterized by comprising the following steps:

providing a target pattern; the target pattern comprises at least one inclined pattern along a first preset direction, and each inclined pattern comprises a first outline and a second outline which are respectively positioned at two sides of the inclined pattern along the first preset direction;

setting a plurality of first sampling points arranged at intervals on the first profile, and setting a plurality of second sampling points arranged at intervals on the second profile;

setting a plurality of first reference rectangles on the first contour according to the first sampling points, and setting a plurality of second reference rectangles on the second contour according to the second sampling points; the first reference rectangle takes two adjacent first sampling points as diagonal points, and the second reference rectangle takes two adjacent second sampling points as diagonal points;

moving the first reference rectangle to the central axis of the inclined pattern along a second preset direction by a first preset distance to obtain a third reference rectangle;

moving the second reference rectangle to the central axis of the inclined pattern along a third preset direction by a second preset distance to obtain a fourth reference rectangle; wherein the second preset direction is opposite to the third preset direction;

filling patterns in the third reference rectangle and the fourth reference rectangle to form a first rectangular pattern and a second rectangular pattern respectively, and correcting the inclined patterns to obtain inclined stepped patterns; wherein the inclined stepped pattern includes the first and second rectangular patterns and an inclined pattern portion between the first and second rectangular patterns; in the inclined stepped pattern, the first rectangular pattern and the second rectangular pattern are arranged alternately.

10. The method of claim 9, further comprising:

and removing the inclined pattern parts of which the two side edges are not covered by the first rectangular pattern and the second rectangular pattern.

11. The method according to claim 9, wherein the first and second sample points are symmetrically arranged with a central axis of the oblique pattern as a symmetry axis in the oblique pattern.

12. The method according to claim 9, wherein the long side or the short side of the first reference rectangle is parallel to the second preset direction.

13. The method according to claim 9, wherein the long side or the short side of the second reference rectangle is parallel to the third preset direction.

14. The method of claim 12, wherein the first predetermined distance is less than a length of a side of the first reference rectangle parallel to the second predetermined direction.

15. The method of claim 13, wherein the second predetermined distance is less than a length of a side of the second reference rectangle parallel to the third predetermined direction.

16. The method of claim 9, wherein the first predetermined distance is different from the second predetermined distance.

17. The method of claim 9, wherein the first predetermined distance is the same as the second predetermined distance.

18. The method according to claim 9, wherein the number of the oblique patterns in the target pattern is plural, and each of the oblique patterns is spaced apart from and parallel to each other;

the first rectangular patterns in two adjacent inclined stepped patterns are aligned.

19. The method according to claim 9, wherein the number of the oblique patterns in the target pattern is plural, and each of the oblique patterns is spaced apart from and parallel to each other;

the method further comprises the following steps:

and moving the even-numbered inclined stepped patterns or the odd-numbered inclined stepped patterns by a third preset distance along a fourth preset direction so as to enable the first rectangular patterns in the two adjacent inclined stepped patterns to be arranged in a staggered mode.

20. The method according to claim 9, wherein the number of the oblique patterns in the target pattern is plural, and each of the oblique patterns is spaced apart from and parallel to each other;

the method further comprises the following steps:

and sequentially moving all the inclined stepped patterns after the first inclined stepped pattern by corresponding distances along a fifth preset direction, so that the first rectangular patterns of all the inclined stepped patterns are sequentially arranged in a staggered manner along the fifth preset direction, and the staggered distances of the first rectangular patterns of two adjacent inclined stepped patterns along the fifth preset direction are the same.

21. An optical proximity correction apparatus for a reticle, comprising:

a pattern providing module for providing a target pattern; the target pattern comprises at least one inclined pattern along a first preset direction, and each inclined pattern comprises a first outline and a second outline which are respectively positioned at two sides of the inclined pattern along the first preset direction;

the sampling point setting module is used for setting a plurality of first sampling points arranged at intervals on the first profile and setting a plurality of second sampling points arranged at intervals on the second profile;

a rectangle setting module, configured to set a plurality of first reference rectangles on the first contour according to the first sampling point, and set a plurality of second reference rectangles on the second contour according to the second sampling point; the first reference rectangle takes two adjacent first sampling points as diagonal points, and the second reference rectangle takes two adjacent second sampling points as diagonal points;

the first moving module is used for moving the first reference rectangle to the central axis of the inclined pattern along a second preset direction by a first preset distance to obtain a third reference rectangle;

the second moving module is used for moving the second reference rectangle to the central axis of the inclined pattern by a second preset distance along a third preset direction to obtain a fourth reference rectangle; wherein the second preset direction is opposite to the third preset direction;

a pattern filling module, configured to fill patterns in the third reference rectangle and the fourth reference rectangle to form a first rectangular pattern and a second rectangular pattern, respectively, so as to correct the oblique pattern to obtain an oblique stepped pattern; wherein the inclined stepped pattern includes the first and second rectangular patterns and an inclined pattern portion between the first and second rectangular patterns; in the inclined stepped pattern, the first rectangular pattern and the second rectangular pattern are arranged alternately.

22. An electronic device comprising a memory and a processor, wherein the memory stores a computer program, and the computer program, when executed by the processor, performs the method of pattern correction of a reticle according to any one of claims 9 to 20.

23. A storage medium storing a computer program which, when executed by one or more processors, implements a method of pattern correction of a reticle as claimed in any one of claims 9 to 20.

24. A device manufacturing method, comprising:

providing a semiconductor substrate;

forming a photoresist layer over the substrate;

patterning the photoresist layer through the reticle of any one of claims 1 to 8 or modified by the method of any one of claims 9 to 20 to form a photoresist pattern over the substrate;

etching the substrate through the photoresist pattern to form a target pattern on the substrate; wherein the target pattern comprises at least one oblique pattern along a first preset direction.

Technical Field

The disclosure relates to the technical field of semiconductor manufacturing, in particular to a mask, a graph correction method thereof, a storage medium and a device preparation method.

Background

In a semiconductor manufacturing process, in order to transfer a Circuit pattern of an Integrated Circuit (IC) onto a semiconductor chip, the Circuit pattern of the IC is designed as a mask pattern, and then the mask pattern is transferred from the surface of the mask onto the semiconductor chip. However, as the feature size (CD) of the integrated circuit is reduced and the Resolution Limit (Resolution Limit) of the Exposure Tool (OET) is affected, the mask pattern is easily subjected to Optical Proximity Effect (OPE) when performing the Exposure process on the mask pattern with high density arrangement for pattern transfer, so that the mask pattern transfer is defective. One method commonly used in the industry today for the problem of Optical Proximity effect is Optical Proximity Correction (OPC), which reduces the deviation of the lithographic pattern obtained by exposure by changing the shape of the original layout pattern.

In the existing optical proximity correction method, for an inclined target pattern, a plurality of sampling points are arranged at the edge of the outline of the inclined target pattern, the inclined target pattern is divided into a plurality of segments through the sampling points, the edge outline of each segment is expanded outwards in an adaptive manner, so that the line width of the pattern at each segment is increased, and the pattern of a mask is obtained. However, the profile of the mask obtained by the method is not in the vertical direction or the horizontal direction, the line width of the mask is difficult to control, the uniformity of the line width of the mask is poor, and the uniformity of the line width of the chip pattern is affected.

Disclosure of Invention

In order to solve the problems, the disclosure provides a mask, a graph correction method thereof, a storage medium and a device preparation method, and solves the technical problem that the uniformity of the line width of the mask obtained by the existing optical proximity correction method is poor.

In a first aspect, the present disclosure provides a reticle including at least one inclined stepped pattern along a first preset direction;

the inclined stepped pattern comprises a first stepped profile and a second stepped profile which are respectively positioned on two sides of the inclined stepped pattern along the first preset direction;

the first stepped contour comprises a plurality of first right angle inflection points, and the second stepped contour comprises a plurality of second right angle inflection points;

in the inclined stepped pattern, the first right-angle inflection points and the second right-angle inflection points are alternately arranged.

According to an embodiment of the present disclosure, optionally, in the inclined stepped pattern, an extending direction of a connection line between the first straight corner points of any two even-numbered positions or any two odd-numbered positions is the same as the first preset direction;

in the inclined stepped pattern, an extending direction of a connection line between the second right-angle inflection points of any two even-numbered bits or any two odd-numbered bits is the same as the first preset direction.

According to an embodiment of the present disclosure, optionally, each step height of the first stepped profile is the same.

Optionally, according to an embodiment of the present disclosure, each step height of the second stepped profile is the same.

According to an embodiment of the present disclosure, optionally, the step height of the first stepped profile is the same as the step height of the second stepped profile.

According to an embodiment of the present disclosure, optionally, in the mask, the number of the inclined stepped patterns is multiple, and the inclined stepped patterns are spaced and parallel to each other;

the first stepped profiles of two adjacent inclined stepped patterns are aligned.

According to an embodiment of the present disclosure, optionally, in the mask, the number of the inclined stepped patterns is multiple, and the inclined stepped patterns are spaced and parallel to each other;

the first stepped profiles of two adjacent inclined stepped patterns are arranged in a staggered manner.

According to the embodiment of the present disclosure, optionally, the first stepped profiles of each of the inclined stepped patterns are sequentially arranged in a staggered manner along a second preset direction, and staggered distances of the first stepped profiles of two adjacent inclined stepped patterns along the second preset direction are the same.

In a second aspect, the present disclosure provides a method for correcting a pattern of a mask, including:

providing a target pattern; the target pattern comprises at least one inclined pattern along a first preset direction, and each inclined pattern comprises a first outline and a second outline which are respectively positioned at two sides of the inclined pattern along the first preset direction;

setting a plurality of first sampling points arranged at intervals on the first profile, and setting a plurality of second sampling points arranged at intervals on the second profile;

setting a plurality of first reference rectangles on the first contour according to the first sampling points, and setting a plurality of second reference rectangles on the second contour according to the second sampling points; the first reference rectangle takes two adjacent first sampling points as diagonal points, and the second reference rectangle takes two adjacent second sampling points as diagonal points;

moving the first reference rectangle to the central axis of the inclined pattern along a second preset direction by a first preset distance to obtain a third reference rectangle;

moving the second reference rectangle to the central axis of the inclined pattern along a third preset direction by a second preset distance to obtain a fourth reference rectangle; wherein the second preset direction is opposite to the third preset direction;

filling patterns in the third reference rectangle and the fourth reference rectangle to form a first rectangular pattern and a second rectangular pattern respectively, and correcting the inclined patterns to obtain inclined stepped patterns; wherein the inclined stepped pattern includes the first and second rectangular patterns and an inclined pattern portion between the first and second rectangular patterns; in the inclined stepped pattern, the first rectangular pattern and the second rectangular pattern are arranged alternately.

According to the embodiment of the present disclosure, optionally, the method further includes:

and removing the inclined pattern parts of which the two side edges are not covered by the first rectangular pattern and the second rectangular pattern.

According to the embodiment of the present disclosure, optionally, in the oblique pattern, the first sampling point and the second sampling point are symmetrically arranged with a central axis of the oblique pattern as a symmetry axis.

According to an embodiment of the present disclosure, optionally, a long side or a short side of the first reference rectangle is parallel to the second preset direction.

According to an embodiment of the present disclosure, optionally, a long side or a short side of the second reference rectangle is parallel to the third preset direction.

According to an embodiment of the present disclosure, optionally, the first preset distance is smaller than a length of a side of the first reference rectangle parallel to the second preset direction.

According to an embodiment of the present disclosure, optionally, the second preset distance is smaller than a length of a side of the second reference rectangle parallel to the third preset direction.

According to an embodiment of the present disclosure, optionally, the first preset distance is different from the second preset distance.

According to an embodiment of the present disclosure, optionally, the first preset distance is the same as the second preset distance.

According to an embodiment of the present disclosure, optionally, in the target pattern, the number of the oblique patterns is plural, and each of the oblique patterns is spaced apart from and parallel to each other;

the first rectangular patterns in two adjacent inclined stepped patterns are aligned.

According to an embodiment of the present disclosure, optionally, in the target pattern, the number of the oblique patterns is plural, and each of the oblique patterns is spaced apart from and parallel to each other;

the method further comprises the following steps:

and moving the even-numbered inclined stepped patterns or the odd-numbered inclined stepped patterns by a third preset distance along a fourth preset direction so as to enable the first rectangular patterns in the two adjacent inclined stepped patterns to be arranged in a staggered mode.

According to an embodiment of the present disclosure, optionally, in the target pattern, the number of the oblique patterns is plural, and each of the oblique patterns is spaced apart from and parallel to each other;

the method further comprises the following steps:

and sequentially moving all the inclined stepped patterns after the first inclined stepped pattern by corresponding distances along a fifth preset direction, so that the first rectangular patterns of all the inclined stepped patterns are sequentially arranged in a staggered manner along the fifth preset direction, and the staggered distances of the first rectangular patterns of two adjacent inclined stepped patterns along the fifth preset direction are the same.

In a third aspect, the present disclosure provides an optical proximity correction apparatus for a reticle, including:

a pattern providing module for providing a target pattern; the target pattern comprises at least one inclined pattern along a first preset direction, and each inclined pattern comprises a first outline and a second outline which are respectively positioned at two sides of the inclined pattern along the first preset direction;

the sampling point setting module is used for setting a plurality of first sampling points arranged at intervals on the first profile and setting a plurality of second sampling points arranged at intervals on the second profile;

a rectangle setting module, configured to set a plurality of first reference rectangles on the first contour according to the first sampling point, and set a plurality of second reference rectangles on the second contour according to the second sampling point; the first reference rectangle takes two adjacent first sampling points as diagonal points, and the second reference rectangle takes two adjacent second sampling points as diagonal points;

the first moving module is used for moving the first reference rectangle to the central axis of the inclined pattern along a second preset direction by a first preset distance to obtain a third reference rectangle;

the second moving module is used for moving the second reference rectangle to the central axis of the inclined pattern by a second preset distance along a third preset direction to obtain a fourth reference rectangle; wherein the second preset direction is opposite to the third preset direction;

a pattern filling module, configured to fill patterns in the third reference rectangle and the fourth reference rectangle to form a first rectangular pattern and a second rectangular pattern, respectively, so as to correct the oblique pattern to obtain an oblique stepped pattern; wherein the inclined stepped pattern includes the first and second rectangular patterns and an inclined pattern portion between the first and second rectangular patterns; in the inclined stepped pattern, the first rectangular pattern and the second rectangular pattern are arranged alternately.

In a fourth aspect, the present disclosure provides an electronic device, comprising a memory and a processor, wherein the memory stores a computer program, and the computer program is executed by the processor to execute the method for correcting the pattern of the mask according to any one of the second aspect.

In a fifth aspect, the present disclosure provides a storage medium storing a computer program which, when executed by one or more processors, implements the method for pattern correction of a reticle as set forth in any one of the second aspects.

In a sixth aspect, the present disclosure provides a device manufacturing method comprising:

providing a semiconductor substrate;

forming a photoresist layer over the substrate;

patterning the photoresist layer through the reticle of any one of the first aspects or the reticle modified by the method of any one of the second aspects to form a photoresist pattern over the substrate;

etching the substrate through the photoresist pattern to form a target pattern on the substrate; wherein the target pattern comprises at least one oblique pattern along a first preset direction.

Compared with the prior art, one or more embodiments in the above scheme can have the following advantages or beneficial effects:

the present disclosure provides a mask, a pattern correction method thereof, a storage medium and a device manufacturing method, the mask including at least one inclined step pattern along a preset direction; the inclined stepped pattern comprises a first stepped profile and a second stepped profile which are respectively positioned on two sides of the inclined stepped pattern along the preset direction; the first stepped contour comprises a plurality of first right angle inflection points, and the second stepped contour comprises a plurality of second right angle inflection points; in the inclined stepped pattern, the first right-angle inflection points and the second right-angle inflection points are alternately arranged. The pattern line width of the mask is easy to control, and the uniformity of optical proximity correction can be improved, and the uniformity of a mask process and the uniformity of chip patterns can be improved.

Drawings

The accompanying drawings, which are included to provide a further understanding of the disclosure and are incorporated in and constitute a part of this specification, illustrate embodiments of the disclosure and together with the description serve to explain the disclosure without limiting the disclosure. In the drawings:

FIG. 1 is a schematic diagram of a reticle structure shown in an exemplary embodiment of the present disclosure;

FIG. 2 is a schematic diagram of another reticle configuration shown in an exemplary embodiment of the present disclosure;

FIG. 3 is a flowchart illustrating a method for correcting patterns of a reticle according to an exemplary embodiment of the present disclosure;

fig. 4 to 11 are schematic diagrams of pattern layouts formed by related steps of a method for correcting patterns of a mask according to an exemplary embodiment of the present disclosure;

FIG. 12 is a block diagram illustrating a connection of a reticle pattern correction apparatus according to an exemplary embodiment of the present disclosure;

in the drawings, wherein like parts are designated with like reference numerals, the drawings are not necessarily to scale;

10-a slanted stepped pattern; 101-a first stepped profile; 1011-first right angle inflection point; 102-a second stepped profile; 1021-a second right angle inflection point; 20-oblique pattern; 201-a first profile; 202-a second contour; 203-first sample point; 204-second sample point; 205-a slanted pattern portion between the first rectangular pattern and the second rectangular pattern; 206 — oblique pattern portions where both side edges of the oblique pattern are not covered by the first rectangular pattern and the second rectangular pattern; 30-a first reference rectangle; 40-a second reference rectangle; 50-a third reference rectangle; 60-a fourth reference rectangle; 70-a first rectangular pattern; 80-second rectangular pattern.

Detailed Description

Embodiments of the present disclosure will be described in detail with reference to the accompanying drawings and examples, so that how to apply technical means to solve technical problems and achieve the corresponding technical effects can be fully understood and implemented. The embodiments and the features of the embodiments of the present disclosure can be combined with each other without conflict, and the formed technical solutions are all within the protection scope of the present disclosure. In the drawings, the size and relative sizes of layers and regions may be exaggerated for clarity. Like reference numerals refer to like elements throughout.

It will be understood that, although the terms first, second, third, etc. may be used to describe various elements, components, regions, layers and/or sections, these elements, components, regions, layers and/or sections should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another element, component, region, layer or section. Thus, a first element, component, region, layer or section discussed below could be termed a second element, component, region, layer or section without departing from the teachings of the present disclosure.

It will be understood that spatial relationship terms, such as "above", "below", "beneath", and the like, may be used herein for ease of description to describe one element or feature's relationship to another element or feature as illustrated in the figures. It will be understood that the spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, then elements or features described as "below" other elements would then be oriented "above" the other elements or features. Thus, the exemplary terms "under" and "under" can encompass both an orientation of above and below. The device may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatial descriptors used herein interpreted accordingly.

The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the disclosure. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises" and/or "comprising," when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof. As used herein, the term "and/or" includes any and all combinations of the associated listed items.

Embodiments of the present disclosure are described herein with reference to cross-sectional illustrations that are schematic illustrations of idealized embodiments (and intermediate structures) of the present disclosure. As such, variations from the shapes of the illustrations as a result, for example, of manufacturing techniques and/or tolerances, are to be expected. Thus, embodiments of the present disclosure should not be limited to the particular shapes of regions illustrated herein, but are to include deviations in shapes that result, for example, from manufacturing. For example, an implanted region shown as a rectangle will typically have rounded or curved features and/or implant concentration gradients at its edges rather than a binary change from implanted to non-implanted region. Also, a buried region formed by implantation may result in some implantation in the region between the buried region and the surface through which the implantation is performed. Thus, the regions illustrated in the figures are schematic in nature and their shapes are not intended to illustrate the actual shape of a region of a device and are not intended to limit the scope of the present disclosure.

In the following description, for purposes of explanation, numerous specific details are set forth in order to provide a thorough understanding of the present disclosure. The following detailed description of the preferred embodiments of the present disclosure, however, the present disclosure may have other embodiments in addition to these detailed descriptions.

Example one

As shown in fig. 1, an embodiment of the present disclosure provides a reticle, which includes at least one inclined step-like pattern 10 along a first predetermined direction. The inclined stepped pattern 10 includes a first stepped contour 101 and a second stepped contour 102 respectively located at two sides of the inclined stepped pattern 10 along a first predetermined direction.

The first stepped contour 101 includes a plurality of first right-angle inflection points 1011, and the second stepped contour 102 includes a plurality of second right-angle inflection points 1021.

In the inclined stepped pattern 10, the first right-angle inflection points 1011 and the second right-angle inflection points 1021 are staggered, as shown in fig. 1, in the vertical direction. I.e. the steps of the first stepped profile 101 and the steps of the second stepped profile 102 are staggered. That is, in the inclined stepped pattern 10, the line width at a partial position is small, and the line width at a partial position is large. And the outline of each position of the mask pattern is ensured to be in the horizontal direction or the vertical direction, so that the pattern line width of the mask is easy to control, the consistency of optical proximity correction can be improved, and the uniformity of a mask process and the uniformity of a chip pattern can be improved.

In the inclined stepped pattern 10, an extending direction of a connection line between the first straight inflection points 1011 at any two even numbers or any two odd numbers is the same as the first predetermined direction. I.e. the connection line of the convex points or the connection line of the concave points on the first stepped profile 101 is also along the first predetermined direction.

In the inclined stepped pattern 10, an extending direction of a connection line between any two even-numbered or any two odd-numbered second right-angle inflection points 1021 is the same as the first predetermined direction. That is, the connection line of the convex points or the connection line of the concave points on the second stepped profile 102 is also along the predetermined direction.

Each step height (h1) of the first stepped profile 101 is the same, each step height (h2) of the second stepped profile 102 is the same, and the step height of the first stepped profile 101 is the same as the step height of the second stepped profile 102 (i.e., h1 is h 2).

When the number of the inclined stepped patterns 10 is plural in the reticle, the inclined stepped patterns 10 are spaced apart from and parallel to each other. And the first stepped contours 101 of two adjacent inclined stepped patterns 10 may be staggered or aligned. In the structure in which two adjacent oblique stepped patterns 10 are staggered, the first stepped contours 101 of any even number of oblique stepped patterns 10 may be aligned, or the first stepped contours 101 of any odd number of oblique stepped patterns 10 may be aligned. Or as shown in fig. 2, the first stepped profiles 101 of the inclined stepped patterns 10 are sequentially staggered along a second preset direction (e.g., horizontal left), and the staggered distance (d3) of the first stepped profiles 101 of two adjacent inclined stepped patterns 10 along the second preset direction (horizontal left) is the same, so that the distance between the profile bumps of two adjacent inclined stepped patterns 10 is increased, the risk of non-exposure in the exposure process is reduced, and the process difficulty is reduced.

The embodiment of the present disclosure provides a mask, which includes at least one inclined stepped pattern 10 along a first preset direction; the inclined stepped pattern 10 includes a first stepped contour 101 and a second stepped contour 102 respectively located at two sides of the inclined stepped pattern 10 along a first preset direction; the first stepped contour 101 includes a plurality of first right-angle inflection points 1011, and the second stepped contour 102 includes a plurality of second right-angle inflection points 1021; in the inclined stepped pattern 10, the first right-angle inflection point 1011 and the second right-angle inflection point 1021 are alternately arranged. The pattern line width of the mask is easy to control, and the uniformity of optical proximity correction can be improved, and the uniformity of a mask process and the uniformity of chip patterns can be improved.

Example two

As shown in fig. 3, an embodiment of the present disclosure provides a method for correcting a pattern of a mask, including:

step S101: as shown in fig. 4, a target pattern is provided; wherein, the target pattern comprises at least one inclined pattern 20 along a first preset direction, and each inclined pattern 20 comprises a first outline 201 and a second outline 202 respectively positioned at two sides of the inclined pattern 20 along the first preset direction.

The target pattern is an optical proximity correction target, that is, in an ideal state, after the mask process is completed, the shape of a pattern formed on a wafer (chip substrate) is the same as the shape of the target pattern.

Step S102: as shown in fig. 5, a plurality of first sampling points 203 are provided at intervals on the first profile 201, and a plurality of second sampling points 204 are provided at intervals on the second profile 202.

Here, in the oblique pattern 20, the distance between any two adjacent first sampling points 203 is the same, and the distance between any two adjacent second sampling points 204 is the same. And the distance between any two adjacent first sampling points 203 is equal to the distance between any two adjacent second sampling points 204. That is, in the inclined pattern 20, the first sampling points 203 and the second sampling points 204 are symmetrically arranged with the central axis of the inclined pattern 20 as a symmetry axis.

The sampling points are used for comparing the difference between the target pattern and the mask pattern which is subsequently arranged, obtaining the influence of the optical proximity effect on the target pattern, and obtaining the edge position error for judging whether the optical proximity correction is finished. Since the line width of the pattern affects the influence of the optical proximity effect on the pattern, at least one sampling point is set on each side of the target pattern in order to obtain the influence of the optical proximity effect at the edge position of the pattern.

Step S103: as shown in fig. 6, a plurality of first reference rectangles 30 are set on the first contour 201 according to the first sampling points 203, and a plurality of second reference rectangles 40 are set on the second contour 202 according to the second sampling points 204; the first reference rectangle 30 uses two adjacent first sampling points 203 as an opposite corner, and the second reference rectangle 40 uses two adjacent second sampling points 204 as an opposite corner.

The long or short side of the first reference rectangle 30 is parallel to the second preset direction (horizontal direction in fig. 6). I.e. the respective side length of the first reference rectangle 30 is in the vertical direction or in the horizontal direction.

The long or short side of the second reference rectangle 40 is parallel to the third preset direction (horizontal direction in fig. 6). I.e. the respective side of the second reference rectangle 40 is in the vertical or horizontal direction.

Step S104: as shown in fig. 7, the first reference rectangle 30 is moved to the central axis of the slanted pattern 20 by a first preset distance in a second preset direction (horizontal left), resulting in a third reference rectangle 50.

Wherein the first preset distance d1 is smaller than the length of the side of the first reference rectangle 30 parallel to the second preset direction, as shown in fig. 7, d1 is smaller than the length of the horizontal side of the first reference rectangle 30.

Step S105: moving the second reference rectangle 40 to the central axis of the slanted pattern 20 along a third preset direction (horizontal right) by a second preset distance to obtain a fourth reference rectangle 60; wherein the second predetermined direction is opposite to the third predetermined direction.

Wherein the second preset distance d2 is smaller than the length of the side of the second reference rectangle 40 parallel to the third preset direction, as shown in fig. 7, d2 is smaller than the length of the horizontal side of the second reference rectangle 40.

The first predetermined distance and the second predetermined distance may be different (i.e., d1 ≠ d2) and may also be the same (i.e., d1 ═ d 2). That is, the first reference rectangle 30 may or may not be translated the same distance as the second reference rectangle 40.

Step S106: as shown in fig. 8, patterns are filled in the third reference rectangle 50 and the fourth reference rectangle 60 to form a first rectangular pattern 70 and a second rectangular pattern 80, respectively, to correct the inclined pattern 20 to obtain an inclined stepped pattern; wherein the inclined stepped pattern includes a first rectangular pattern 70 and a second rectangular pattern 80, and an inclined pattern portion 205 located between the first rectangular pattern 70 and the second rectangular pattern 80; in the inclined stepped pattern, the first rectangular pattern 70 and the second rectangular pattern 80 are alternately arranged.

The first and second rectangular patterns 70 and 80 have both side profiles of the inclined stepped pattern stepped. The inclined ladder-shaped pattern is the pattern of the mask. The optical proximity correction method ensures that the outline of each position of the mask pattern is in the horizontal direction or the vertical direction, so that the line width of the mask pattern is easy to control, the consistency of optical proximity correction can be improved, and the uniformity of a mask process and the uniformity of a chip pattern can be improved.

It should be noted that due to the translation of the first reference rectangle 30 and the second reference rectangle 40, the portions of the two side edges of the tilted patterns 20 are located outside the first rectangular patterns 70 and the second rectangular patterns 80.

Step S107: as shown in fig. 9, the inclined pattern portions 206 of both side edges of the inclined pattern 20 not covered by the first and second rectangular patterns 70 and 80 are removed.

When the number of the inclined patterns 20 in the target pattern is plural, the respective inclined patterns 20 are spaced apart from and parallel to each other. The first rectangular patterns 70 in two adjacent oblique stepped patterns may be staggered or aligned. Similarly, in the structure in which two adjacent oblique stepped patterns are staggered, the first rectangular patterns 70 of any even number of oblique stepped patterns may be aligned, or the first rectangular patterns 70 of any odd number of oblique stepped patterns may be aligned.

In order to obtain a structure in which two adjacent oblique stepped patterns are staggered, the method further includes the following steps after step S107:

as shown in fig. 10, the even-numbered slanted step pattern or the odd-numbered slanted step pattern (the second slanted step pattern in the figure) is shifted by a third predetermined distance d3 along a fourth predetermined direction (e.g., horizontal left) so that the first rectangular patterns of the two adjacent slanted step patterns are staggered.

Or as shown in fig. 11, all the inclined stepped patterns (the second inclined stepped pattern, the third inclined stepped pattern, etc.) after the first inclined stepped pattern are sequentially moved by a corresponding distance along the fifth preset direction (e.g., horizontal left), so that the first rectangular patterns 70 of each inclined stepped pattern are sequentially staggered along the fifth preset direction (horizontal left), and the staggered distance d3 of the first rectangular patterns 70 of two adjacent inclined stepped patterns along the fifth preset direction (horizontal left) is the same.

The structure shown in fig. 11 can increase the distance between the contour bumps of two adjacent inclined stepped patterns, reduce the risk of non-exposure in the exposure process, and reduce the process difficulty.

The embodiment of the disclosure provides an optical proximity correction method for a mask, which determines sampling points at the edge of a target image, defines a reference rectangle through the sampling points, translates the reference rectangle to the central axis of an inclined pattern 20 for a certain distance, and fills the pattern therein to form an inclined stepped pattern. The method has the advantages that the pattern line width of the corrected mask is easy to control, the consistency of optical proximity correction can be improved, and the uniformity of a mask process and the uniformity of a chip pattern can be improved.

EXAMPLE III

Referring to fig. 12, the present embodiment provides an optical proximity correction apparatus 100 for a mask, including: a pattern providing module 101, a sampling point setting module 102, a rectangle setting module 103, a first moving module 104, a second moving module 105, and a pattern filling module 106.

A pattern providing module 101 for providing a target pattern; the target pattern comprises at least one inclined pattern along a first preset direction, and each inclined pattern comprises a first outline and a second outline which are respectively positioned at two sides of the inclined pattern along the first preset direction;

the sampling point setting module 102 is configured to set a plurality of first sampling points arranged at intervals on the first profile, and set a plurality of second sampling points arranged at intervals on the second profile;

a rectangle setting module 103, configured to set a plurality of first reference rectangles on the first contour according to the first sampling point, and set a plurality of second reference rectangles on the second contour according to the second sampling point; the first reference rectangle takes two adjacent first sampling points as diagonal points, and the second reference rectangle takes two adjacent second sampling points as diagonal points;

a first moving module 104, configured to move the first reference rectangle to a central axis of the oblique pattern along a second preset direction by a first preset distance, so as to obtain a third reference rectangle;

a second moving module 105, configured to move the second reference rectangle to the central axis of the oblique pattern along a third preset direction by a second preset distance, so as to obtain a fourth reference rectangle; wherein the second preset direction is opposite to the third preset direction;

a pattern filling module 106, configured to fill patterns in the third reference rectangle and the fourth reference rectangle to form a first rectangular pattern and a second rectangular pattern, respectively, so as to correct the oblique pattern to obtain an oblique stepped pattern; wherein the inclined stepped pattern includes the first and second rectangular patterns and an inclined pattern portion between the first and second rectangular patterns; in the inclined stepped pattern, the first rectangular pattern and the second rectangular pattern are arranged alternately.

The specific embodiment process of the above method steps can be referred to as embodiment two, and the details of this embodiment are not repeated herein.

Example four

The embodiment provides an electronic device, which may be a mobile phone, a computer, a tablet computer, or the like, and includes a memory and a processor, where the memory stores a computer program, and the computer program is executed by the processor to implement the method for optical proximity correction of a reticle as described in the second embodiment. It is to be appreciated that the electronic device can also include input/output (I/O) interfaces, as well as communication components.

The processor is configured to perform all or part of the steps of the method for correcting optical proximity of a reticle as in the second embodiment. The memory is used to store various types of data, which may include, for example, instructions for any application or method in the electronic device, as well as application-related data.

The Processor may be an Application Specific Integrated Circuit (ASIC), a Digital Signal Processor (DSP), a Digital Signal Processing Device (DSPD), a Programmable Logic Device (PLD), a Field Programmable Gate Array (FPGA), a controller, a microcontroller, a microprocessor, or other electronic components, and is configured to perform the method for optical proximity correction of a mask in the first embodiment.

The Memory may be implemented by any type of volatile or non-volatile Memory device or combination thereof, such as Static Random Access Memory (SRAM), Electrically Erasable Programmable Read-Only Memory (EEPROM), Erasable Programmable Read-Only Memory (EPROM), Programmable Read-Only Memory (PROM), Read-Only Memory (ROM), magnetic Memory, flash Memory, magnetic disk or optical disk.

EXAMPLE five

The present embodiments provide a computer readable storage medium, such as a flash memory, a hard disk, a multimedia card, a card type memory (e.g., SD or DX memory, etc.), a Random Access Memory (RAM), a Static Random Access Memory (SRAM), a Read Only Memory (ROM), an Electrically Erasable Programmable Read Only Memory (EEPROM), a Programmable Read Only Memory (PROM), a magnetic memory, a magnetic disk, an optical disk, a server, an App application mall, etc., having stored thereon a computer program which, when executed by a processor, may implement the method steps of:

step S101: providing a target pattern; the target pattern comprises at least one inclined pattern along a first preset direction, and each inclined pattern comprises a first outline and a second outline which are respectively positioned at two sides of the inclined pattern along the first preset direction;

step S102: setting a plurality of first sampling points arranged at intervals on the first profile, and setting a plurality of second sampling points arranged at intervals on the second profile;

step S103: setting a plurality of first reference rectangles on the first contour according to the first sampling points, and setting a plurality of second reference rectangles on the second contour according to the second sampling points; the first reference rectangle takes two adjacent first sampling points as diagonal points, and the second reference rectangle takes two adjacent second sampling points as diagonal points;

step S104: moving the first reference rectangle to the central axis of the inclined pattern along a second preset direction by a first preset distance to obtain a third reference rectangle;

step S105: moving the second reference rectangle to the central axis of the inclined pattern along a third preset direction by a second preset distance to obtain a fourth reference rectangle; wherein the second preset direction is opposite to the third preset direction;

step S106: filling patterns in the third reference rectangle and the fourth reference rectangle to form a first rectangular pattern and a second rectangular pattern respectively, and correcting the inclined patterns to obtain inclined stepped patterns; wherein the inclined stepped pattern includes the first and second rectangular patterns and an inclined pattern portion between the first and second rectangular patterns; in the inclined stepped pattern, the first rectangular pattern and the second rectangular pattern are arranged alternately.

The specific embodiment process of the above method steps can be referred to as embodiment two, and the details of this embodiment are not repeated herein.

EXAMPLE six

The disclosed embodiment provides a device manufacturing method, including:

step S201: providing a semiconductor substrate;

step S202: forming a photoresist layer over the substrate;

step S203: patterning the photoresist layer through the reticle of the first embodiment or the reticle modified by the method of the second embodiment to form a photoresist pattern over the substrate;

step S204: etching the substrate through the photoresist pattern to form a target pattern on the substrate; wherein the target pattern comprises at least one oblique pattern along a first preset direction.

The embodiment of the disclosure provides a device manufacturing method, which includes performing a mask process through a mask plate with an inclined step-shaped pattern to form a target pattern on a substrate; the target pattern includes at least one oblique pattern along a first preset direction. The mask can improve the uniformity of chip patterns.

Although the embodiments disclosed in the present disclosure are described above, the descriptions are only for the convenience of understanding the present disclosure, and are not intended to limit the present disclosure. It will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the disclosure, and that the scope of the disclosure is to be limited only by the appended claims.