阅读说明：本技术 硅片处理设备 (Silicon wafer processing equipment ) 是由 张少飞 于 2020-12-23 设计创作，主要内容包括：本发明涉及一种硅片处理设备,包括硅片处理装置,所述硅片处理装置包括一具有容纳腔体的柜体,所述柜体的第一侧壁上设置有入口,所述入口处设置有片盒上载台,还包括离子风机和排风结构；所述离子风机设置于所述柜体的顶部,用于在片盒进入所述柜体之前对片盒提供离子风以消除片盒静电,并去除片盒上的污染物；所述排风结构包括与真空设备连接的排风管道,所述排风管道设置于所述第一侧壁上,且所述排风管道的进口位于所述离子风机与所述柜体的入口之间,用于吸取并排出由离子风吹起的污染物。(The invention relates to a silicon wafer processing device, which comprises a silicon wafer processing device, an ion fan and an air exhaust structure, wherein the silicon wafer processing device comprises a cabinet body with a containing cavity, an inlet is formed in a first side wall of the cabinet body, a wafer box loading platform is arranged at the inlet; the ion fan is arranged at the top of the cabinet body and used for providing ion wind for the wafer box before the wafer box enters the cabinet body so as to eliminate static electricity of the wafer box and remove pollutants on the wafer box; the exhaust structure includes the exhaust duct who is connected with vacuum apparatus, exhaust duct set up in on the first lateral wall, just exhaust duct's import is located the ion fan with between the entry of the cabinet body for absorb and discharge the pollutant that is blown up by the ion wind.)

1. A silicon wafer processing device comprises a silicon wafer processing device, wherein the silicon wafer processing device comprises a cabinet body with a containing cavity, an inlet is formed in a first side wall of the cabinet body, a wafer box loading platform is arranged at the inlet, and the silicon wafer processing device is characterized by further comprising an ion fan and an air exhaust structure;

the ion fan is arranged at the top of the cabinet body and used for providing ion wind for the wafer box before the wafer box enters the cabinet body so as to eliminate static electricity of the wafer box and remove pollutants on the wafer box;

the exhaust structure includes the exhaust duct who is connected with vacuum apparatus, exhaust duct set up in on the first lateral wall, just exhaust duct's import is located the ion fan with between the entry of the cabinet body for absorb and discharge the pollutant that is blown up by the ion wind.

2. The silicon wafer processing apparatus according to claim 1, further comprising a transport device for transporting the wafer cassette to the stage on the wafer cassette, the ion blower being located on a transport path of the wafer cassette.

3. The silicon wafer processing apparatus of claim 2, wherein the ion blower is disposed at a region of the top of the cabinet body near the first sidewall, and the transportation device transports the wafer cassette to a position opposite to the air outlet of the ion blower, and the inlet of the air exhaust duct faces a gap between the wafer cassette and the air outlet of the ion blower.

4. The silicon wafer processing apparatus according to claim 2, wherein an air outlet of the ion blower is externally coated with a housing, the housing including an opening exposing the air outlet, the opening and the inlet being located on a same side of the cabinet.

5. The silicon wafer processing apparatus of claim 4, wherein the housing comprises a first section to accommodate the air outlet and a second section capable of accommodating a portion of the cassette.

6. The silicon wafer processing apparatus according to claim 4, wherein the housing comprises a second side wall and a third side wall opposite to each other in a first direction perpendicular to the air outlet direction of the ion blower, wherein a first notch is formed at one end of the second side wall close to the opening, a second notch is formed at one end of the third side wall close to the opening, the first notch and the second notch have the same shape, the length of the first notch in the second direction is greater than that of the cassette in the second direction, and the second direction is perpendicular to the first direction and perpendicular to the air outlet direction of the ion blower.

7. The silicon wafer processing apparatus according to claim 4, wherein the housing includes a second side wall and a third side wall opposite to each other in a first direction perpendicular to the air outlet direction of the ion blower, wherein one edge of the second side wall is provided with a first notch, the first notch extends perpendicularly in a direction close to the third side wall and penetrates through the third side wall, a second notch is formed in the third side wall, the opening is formed in a region between the first notch and the second notch, and the length of the first notch in the second direction is greater than the length of the cassette in the second direction, and the second direction is perpendicular to the first direction and perpendicular to the air outlet direction of the ion blower.

8. The silicon wafer processing apparatus according to claim 4, wherein the housing comprises a bottom wall located on a side of the air outlet close to the stage on the wafer cassette, a side of the housing opposite to the bottom wall is open, and the bottom wall is provided with a third notch, so that the wafer cassette can pass through the third notch along a vertical direction perpendicular to a horizontal plane.

Technical Field

The invention relates to the technical field of silicon product manufacturing, in particular to silicon wafer processing equipment.

Background

FOSB (wafer box) for loading silicon chip is all nonconducting generally, in other words, the wafer box surface can have static to exist, and static has the effect of adsorbed particle, and when the wafer box was in the in-process of transporting the silicon chip, easy because some particles of static adsorption on the wafer box surface, the particle that the wafer box surface adsorbed can pollute the silicon chip surface, because the existence of static, the constantly adsorbed particle on wafer box surface causes the risk greatly increased who pollutes the silicon chip.

Disclosure of Invention

In order to solve the technical problem, the invention provides silicon wafer processing equipment, which solves the problem that silicon wafers are easy to pollute due to static electricity on the surface of a wafer box.

In order to achieve the purpose, the embodiment of the invention adopts the technical scheme that: a silicon wafer processing device comprises a silicon wafer processing device, wherein the silicon wafer processing device comprises a cabinet body with a containing cavity, an inlet is formed in a first side wall of the cabinet body, a wafer box loading platform is arranged at the inlet, and the silicon wafer processing device also comprises an ion fan and an air exhaust structure;

the ion fan is arranged at the top of the cabinet body and used for providing ion wind for the wafer box before the wafer box enters the cabinet body so as to eliminate static electricity of the wafer box and remove pollutants on the wafer box;

the exhaust structure includes the exhaust duct who is connected with vacuum apparatus, exhaust duct set up in on the first lateral wall, just exhaust duct's import is located the ion fan with between the entry of the cabinet body for absorb and discharge the pollutant that is blown up by the ion wind.

Optionally, the ion generator further comprises a transportation device for transporting the wafer cassette to the wafer cassette loading platform, and the ion generator is located on a transportation path of the wafer cassette.

Optionally, the ion fan set up in the top of the cabinet body is close to the region of first lateral wall, conveyer with the spool box transport to with the air outlet of ion fan is when just to, the import of exhaust duct towards the spool box with gap between the ion fan air outlet.

Optionally, a casing is wrapped outside an air outlet of the ion blower, the casing includes an opening enabling the air outlet to be exposed, and the opening and the inlet are located on the same side of the cabinet body.

Optionally, the housing includes a first region for accommodating the air outlet, and a second region capable of accommodating a portion of the cassette.

Optionally, the casing is perpendicular to the first direction of ionic wind machine's air-out direction includes relative second lateral wall and third lateral wall, the second lateral wall is close to open-ended one end has first breach, the third lateral wall is close to open-ended one end has the second breach, first breach with the shape of second breach is the same, just first breach length in the second direction is greater than the film cartridge and is in length in the second direction, the second direction perpendicular to first direction, and perpendicular to ionic wind machine's air-out direction.

Optionally, the casing is at the perpendicular to including relative second lateral wall and third lateral wall on the first direction of the air-out direction of ion fan, an edge of second lateral wall is provided with first breach, follows first breach is to being close to the perpendicular extension of direction of third lateral wall, and run through the third lateral wall form the second breach on the third lateral wall, first breach with regional formation between the second breach the opening, just first breach is greater than the spool box in the ascending length of second direction, the second direction perpendicular to first direction, and perpendicular to the air-out direction of ion fan.

Optionally, the casing includes a bottom wall located at one side of the air outlet close to the wafer box loading platform, one side of the casing opposite to the bottom wall is open, and the bottom wall is provided with a third notch, so that the wafer box can pass through the third notch along the vertical direction perpendicular to the horizontal plane.

The invention has the beneficial effects that: through the setting of ionic wind machine, before the wafer box unloads or loads the silicon chip, get rid of the static on wafer box surface to through the cooperation of exhaust structure, will be siphoned away by the particle pollution that ionic wind blown, prevent the pollution of particle pollution to the silicon chip.

Drawings

FIG. 1 is a first schematic structural diagram of a silicon wafer processing apparatus according to an embodiment of the present invention;

FIG. 2 is a schematic structural diagram of a silicon wafer processing apparatus according to an embodiment of the present invention;

FIG. 3 is a schematic view of an ion blower according to an embodiment of the present invention;

FIG. 4 is a first schematic view of a housing according to an embodiment of the present invention;

FIG. 5 is a schematic view of a second embodiment of the housing of the present invention;

fig. 6 is a schematic view showing a third housing structure according to an embodiment of the present invention.

Detailed Description

In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the drawings of the embodiments of the present invention. It is to be understood that the embodiments described are only a few embodiments of the present invention, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the described embodiments of the invention, are within the scope of the invention.

In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc., indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplicity of description, but do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.

As shown in fig. 1-3, the embodiment provides a silicon wafer processing apparatus, which includes a silicon wafer processing device 1, where the silicon wafer processing device 1 includes a cabinet 11 having a containing cavity, an inlet is disposed on a first side wall of the cabinet 11, a wafer cassette loading platform 12 is disposed at the inlet, and the silicon wafer processing apparatus further includes an ion blower 2 and an air exhaust structure;

the ion fan 2 is arranged at the top of the cabinet body 11 and is used for providing ion wind for the wafer box before the wafer box enters the cabinet body 11 so as to eliminate static electricity of the wafer box and remove pollutants on the wafer box;

the exhaust structure includes the exhaust duct who is connected with vacuum apparatus, exhaust duct set up in on the first lateral wall, just exhaust duct's import is located ion fan 2 with between the entry of the cabinet body 11 for absorb and discharge the pollutant that is blown up by the ion wind.

The relative position relation between the processing wafer box 4 and the ion fan when static electricity is eliminated is shown in figure 1, through the arrangement of the ion fan 2, before the wafer box unloads or loads a silicon wafer, the static electricity on the surface of the wafer box is removed, and through the matching of an air exhaust structure, particle pollution blown by ion wind is sucked away, so that the particle pollution is prevented from entering the cabinet body 11, and the pollution of the particle pollution to the silicon wafer is prevented.

The relative position relation between the processing box 4 and the ion fan when static electricity is eliminated is shown in fig. 1, the size of a gap between the box 4 and the ion fan can be set according to actual needs, and the exhaust duct can suck away particle pollution blown by ion wind conveniently.

In the embodiment, the device further comprises a transportation device for transporting the wafer cassette to the wafer cassette loading platform 12, and the ion fan 2 is located on a transportation path of the wafer cassette.

Before the transport device transports the wafer box to the wafer box loading platform 12, the position of the ion fan 2 stays for a preset time to remove particle pollution on the surface of the wafer box, the transport path of the transport device does not need to be changed, and the operation flow is simplified.

In this embodiment, exemplarily in this embodiment, the conveyer is the overhead traveling crane, silicon wafer treatment facility in this embodiment is applied to the silicon wafer workshop that uses the overhead traveling crane device, some main equipment are not convenient for install small-size clean canopy, because the setting of overhead traveling crane can't install clean canopy, the spool box surface is because the existence of static like this, and the adsorbed granule leads to the fact the pollution to the silicon wafer easily, in this embodiment, get rid of static through ionic wind, and blow away the granule on spool box surface, and the granule that blows off ionic wind through the setting of exhaust structure is fast siphoned away, reach the effect on purification spool box surface, when preventing that the door of spool box from opening with the uninstallation or loading silicon wafer, the silicon wafer is stained.

In this embodiment, exemplarily, the ion blower 2 is disposed at the top of the cabinet 11 close to the region of the first sidewall, the transportation device transports the wafer box to the air outlet 21 of the ion blower 2, and when the transportation device is aligned with the air outlet 21 of the ion blower 2, the inlet of the air exhaust duct faces the wafer box and the gap between the air outlet 21 of the ion blower 2.

The air exhaust pipeline can timely absorb particle pollution blown away by ion wind, and meanwhile, the effect of guiding the ion wind in the direction is achieved, and the particle pollution on the surface of the wafer box is prevented from being scattered.

The particle pollution that exhaust pipe siphoned away can be accomodate in polluting the collecting box, the processing of being convenient for.

In the working space (such as a workshop) where the silicon wafer processing equipment is located, air exhaust equipment and pollution recovery equipment are generally arranged, and the air exhaust pipeline can be connected with the air exhaust equipment arranged in the working space, so that particle pollution sucked away by the air exhaust pipeline can be directly treated by the pollution recovery equipment without being independently arranged, and the cost is reduced.

In this embodiment, for example, an outer portion of the air outlet 21 of the ion blower 2 is covered with a casing 3, and the casing 3 includes an opening exposing the air outlet 21, and the opening and the inlet are located on the same side of the cabinet 11.

The wind direction of the further assurance ionic wind that sets up of casing 3 is towards the spool box, prevents that particle pollution from scattering, the effectual pollution that prevents to the silicon chip.

In the present embodiment, the housing 3 includes a first area for accommodating the air outlet 21, and a second area capable of accommodating a part of the cassette.

The tablet box part is accommodated in the shell 3, so that particle pollution on the surface of the tablet box can be effectively prevented.

Referring to fig. 3 and 4, in this embodiment, the housing 3 includes a second side, 310 and a third side wall 320 opposite to each other in a first direction perpendicular to the air outlet direction of the ion blower 2, the second side wall 310 has a first notch 31 at an end close to the opening, the third side wall 320 has a second notch 32 at an end close to the opening, the first notch 31 and the second notch 32 have the same shape, and the length of the first notch 31 in the second direction is greater than the length of the cassette in the second direction (refer to the X direction in fig. 4), and the second direction is perpendicular to the first direction and perpendicular to the air outlet direction of the ion blower 2.

Note that, in the direction of the drawing of fig. 3, the second sidewall 310 and the third sidewall 320 overlap (the third sidewall 320 is hidden by the second sidewall 310), and the first notch 31 and the second notch 32 overlap, so the first notch 31 and the second notch 32 are indicated at the same position, but actually the first notch 31 and the second notch 32 are not the same structure, and refer to fig. 4.

In this embodiment, the transportation device for transporting the film box is an overhead traveling crane, the overhead traveling crane transports the film box to different paths on the bearing platform of the cabinet 11, when the transportation path of the overhead traveling crane is vertical to the horizontal plane, the first notch 31 and the second notch 32 are arranged so that the overhead traveling crane transports the film box to the position right opposite to the air outlet 21 of the ion blower 2, and the film box is partially coated by the housing 3, the film box, the housing 3 and the ion blower 2 form a semi-closed space, the exhaust duct is located at one side of the housing 3 close to the film box upper bearing platform 12, the inlet of the exhaust duct faces the gap between the housing 3 and the film box, because the exhaust duct is connected with the vacuum equipment, the semi-closed space forms negative pressure, and the ion wind blown by the ion blower 2 enters the semi-closed space, after the surface of the wafer box, the ion wind is sucked away by the air exhaust pipeline, the ion wind can not blow to other directions, particle pollution blown up by the ion wind is prevented from falling into the wafer box loading platform 12 or other places, particle pollution is effectively prevented from dispersing, and pollution to a silicon wafer is avoided. It should be noted that the silicon wafer processing equipment in this embodiment is applied to a silicon wafer processing workshop using a crown block device, and for controlling the risk of contamination of particles caused by electrostatically adsorbed particles in the FOSB, he considers that some large-scale equipment is inconvenient to install a small-sized clean shed, and avoids the situation that the crown block cannot install the clean shed, and blows away particles without electrostatic adsorption through a static elimination mode and a blowing mode, and quickly draws away the particles from the area under the vacuum negative pressure condition, so as to achieve the effect of purifying the FOSB surface, and prevent the risk of contamination of the silicon wafer when the FOSB door is opened by the FOSB.

For example, in an embodiment of the present invention, referring to fig. 5, the housing includes a second side wall 310 and a third side wall 320 opposite to each other in a first direction perpendicular to an air outlet direction of the ion blower, one edge of the second side wall 310 is provided with a first notch 31, the first notch 31 extends perpendicularly in a direction close to the third side wall 320 and penetrates through the third side wall 320, a second notch 32 is formed on the third side wall 320, a region between the first notch 31 and the second notch 32 forms the opening, a length of the first notch 31 in the second direction (referring to an X direction in fig. 5) is greater than a length of the cassette in the second direction, and the second direction is perpendicular to the first direction and perpendicular to the air outlet direction of the ion blower.

Compared with the shell shown in fig. 4, the shell shown in fig. 5 reduces the size of the opening, namely reduces the size of a semi-closed space formed by the sheet box, the shell 3 and the ion fan 2, is beneficial to controlling the negative pressure in the semi-closed space, effectively controls the wind direction of the ion wind, and avoids the scattering of particle pollution.

Referring to fig. 6, in this embodiment, for example, the housing includes a bottom wall located at a side of the air outlet close to the tablet loading platform on the tablet cassette, a side of the housing opposite to the bottom wall is open, and the bottom wall is provided with a third notch 33, so that the tablet cassette can pass through the third notch 33 along a vertical direction perpendicular to a horizontal plane.

It should be noted that the housing shown in fig. 6 is simpler in structure and facilitates the movement of the tablet cassette compared to the housing shown in fig. 4 and 5, but the housing structure shown in fig. 5 is preferred in this embodiment because the side of the housing opposite to the bottom wall is open and is not beneficial to the control of the negative pressure.

It should be noted that the number of the ion fans 2 may be set according to actual needs, in a specific implementation manner of this embodiment, the number of the ion fans 2 is the same as the number of the wafer cassette loading stages 12, as shown in fig. 2, the silicon wafer processing apparatus includes two wafer cassette loading stages 12, and two ion fans 2 are disposed in the corresponding silicon wafer processing apparatus.

It should be noted that the silicon wafer processing apparatus in this embodiment is applied to various processes involved in the silicon wafer production and inspection processes, for example, the silicon wafer processing apparatus 1 may be a sorting machine, a silicon wafer parameter tester, or the like.

It will be understood that the above embodiments are merely exemplary embodiments taken to illustrate the principles of the present invention, which is not limited thereto. It will be apparent to those skilled in the art that various modifications and improvements can be made without departing from the spirit and substance of the invention, and these modifications and improvements are also considered to be within the scope of the invention.