阅读说明：本技术 用于在扫描期间配置束的空间尺寸的方法和设备 (Method and apparatus for configuring spatial dimensions of a beam during scanning ) 是由 D·M·斯劳特布姆 H·T·海梅里克斯 J·罗伊萨里瓦斯 J·科塔尔 于 2019-08-01 设计创作，主要内容包括：根据本发明的一方面,提供一种对横跨用于将图案曝光至衬底上的图案形成装置扫描光子束或粒子束的步骤进行配置的方法,其中所述方法包括：确定被配置成改善所述曝光的品质的图案化校正的空间分辨率；和基于所确定的所述图案化校正的空间分辨率来确定所述束的空间尺寸。(According to an aspect of the present invention, there is provided a method of configuring a step of scanning a photon beam or a particle beam across a patterning device for exposing a pattern onto a substrate, wherein the method comprises: determining a spatial resolution of a patterning correction configured to improve a quality of the exposure; and determining a spatial dimension of the beam based on the determined spatial resolution of the patterning correction.)

1. A method of configuring a step of scanning a photon beam or particle beam across a patterning device for exposing a pattern onto a substrate, the method comprising:

determining a spatial resolution of a patterning correction configured to improve a quality of the exposure; and

determining a spatial dimension of the photon beam or particle beam based on the determined spatial resolution of the patterning correction.

2. The method of claim 1, wherein configuring the steps is performed in a lithographic apparatus.

3. The method of claim 2, wherein the patterning correction comprises a correction to mitigate effects of one or more of alignment, overlay, critical dimension, dose, and focus.

4. The method of claim 1, wherein the patterning correction is determined based on one or more measurements made on another substrate.

5. The method of claim 1, wherein a beam cross-section defines a slit at the patterning device.

6. The method of claim 5, wherein the photon beam or particle beam passes through an exposure slit region for forming the shape of the slit.

7. The method of claim 5, wherein the spatial dimension of the photon beam or particle beam is associated with a length of the slit in a direction of the scan.

8. The method of claim 1, wherein the spatial dimension of the photon beam or particle beam is indirectly proportional to the spatial resolution of the patterning correction.

9. The method of claim 7, wherein according to S²+C²≤1.1C²The length S of the slit is related to the spatial resolution C of the patterning correction.

10. The method of claim 1, wherein the patterning device comprises a plurality of dies to be exposed to the substrate at a plurality of locations, and wherein the spatial resolution of the patterning correction is less than a size of one of the plurality of dies.

11. The method of claim 1, wherein the patterning device comprises a mask or a reticle.

12. The method of claim 1, wherein the spatial dimension of the photon beam or particle beam is controlled by a beam stop.

13. The method of claim 1, further comprising: configuring the patterning device by positioning features within a functional area on the patterning device based at least in part on the spatial resolution of the patterning correction.

14. An electronic data carrier comprising instructions which, when executed on at least one processor, cause the at least one processor to control a device to perform the method according to claim 1.

15. An apparatus for configuring the step of scanning a beam of photons or particles across a patterning device for exposing a pattern onto a substrate, the apparatus comprising a processor configured to execute computer program code to perform the method of:

determining a spatial resolution of a patterning correction configured to improve a quality of the exposure; and

determining a spatial dimension of the photon beam or particle beam based on the determined spatial resolution of the patterning correction.

Technical Field

The present invention relates to a method and apparatus for exposing a pattern using radiation. In particular, the present invention relates to a method and apparatus for scanning a photon or particle beam over a patterning device.

Background

A lithographic apparatus is a machine configured to apply a desired pattern onto a substrate. Lithographic apparatus can be used, for example, in the manufacture of Integrated Circuits (ICs). A lithographic apparatus may, for example, project a pattern (also commonly referred to as a "design layout" or "design") at a patterning device (e.g., a mask) onto a layer of radiation-sensitive material (resist) disposed on a substrate (e.g., a wafer).

To project a pattern onto a substrate, a lithographic apparatus may use electromagnetic radiation. The wavelength of this radiation determines the minimum size of features that can be formed on the substrate. Typical wavelengths currently in use are 365nm (i-line), 248nm, 193nm and 13.5 nm. A lithographic apparatus using Extreme Ultraviolet (EUV) radiation having a wavelength in the range 4nm to 20nm (e.g. 6.7nm or 13.5nm) may be used to form smaller features on a substrate than a lithographic apparatus using radiation having a wavelength of 193nm, for example.

Low k₁Lithography can be used to process features having dimensions smaller than the typical resolution limit of the lithographic apparatus. In such a process, the resolution formula can be expressed as CD ═ k₁X λ/NA, where λ is the wavelength of the radiation employed, NA is the numerical aperture of the projection optics in the lithographic apparatus, CD is the "critical dimension" (typically the smallest feature size printed, but in this case half a pitch), and k is₁Is an empirical resolution factor. In general, k₁The smaller, the more difficult it is to reproduce shapes and dimensions on the substrate similar to patterns planned by circuit designers for achieving specific electrical functionality and performance. To overcome these difficulties, complex trimming steps may be applied to the lithographic projection apparatus and/or the design layout. These steps include, for example and without limitation, optimization of NA, custom illumination schemes, use of phase-shifting patterning devices, various optimizations of the design layout, such as optical proximity correction (OPC, also sometimes referred to as "optical and process correction") in the design layout, or other methods generally defined as "resolution enhancement techniques" (RET). Alternatively, a tight control loop for controlling the stability of the lithographic apparatus may be used to improve at low-k₁Reproduction of the following pattern.

The radiation beam used by the lithographic apparatus may not cover the entire patterning device at the same time. To project a pattern onto the substrate, the radiation beam may thus be scanned across the patterning device. The properties of the patterning device, the substrate, and the radiation beam may all contribute to the characteristics of the resulting pattern. Optimization of several of these properties in order to achieve an exposure that produces a pattern that matches the intended design may include optimization of properties associated with the radiation beam itself.

Disclosure of Invention

According to an aspect of the present invention, there is provided a method of configuring a step of scanning a photon beam or a particle beam across a patterning device for exposing a pattern onto a substrate, wherein the method comprises: determining a spatial resolution of a patterning correction configured to improve a quality of the exposure; and determining a spatial dimension of the beam based on the determined spatial resolution of the patterning correction.

Optionally, configuring the steps is done in a lithographic apparatus.

Optionally, the patterning correction comprises a correction to mitigate the effect of one or more of alignment, overlay, critical dimension, dose and focus.

Optionally, the patterning correction is determined based on one or more measurements made on another substrate.

Optionally, the beam cross-section defines a slit at the patterning device.

Optionally, the beam passes through an exposure slit region for forming the shape of the slit.

Optionally, the spatial dimension of the beam is associated with a length of the slit in a scan direction.

Optionally, the spatial dimension of the beam is indirectly proportional to the spatial resolution of the patterning correction.

Optionally according to S²+C²≤1.1C²The length S of the slit is related to the spatial resolution C of the patterning correction.

Optionally, the patterning device comprises a plurality of dies to be exposed to the substrate at a plurality of locations, wherein the spatial resolution of the patterning correction is smaller than a size of one of the plurality of dies.

Optionally, the patterning device comprises a mask or reticle.

Optionally, the spatial dimension of the beam is controlled by a beam stop.

Optionally, the bundle blocker comprises a plurality of movable vanes.

Optionally, the patterning device is positioned at an image plane of the beam and the beam stop is positioned in a conjugate plane of the image plane.

Optionally, the spatial dimension of the beam is adjusted using variable beam shaping optics.

Optionally, the method further comprises scanning the beam across a patterning device to expose the pattern onto the substrate.

Optionally, the method further comprises: adjusting one or more properties of the beam to apply the patterning correction during scanning of the beam across the patterning device.

Optionally, scanning the beam across the patterning device comprises: moving one of the patterning device and the beam relative to the other of the patterning device and the beam.

According to another aspect of the invention, there is provided an electronic data carrier comprising instructions which, when executed on at least one processor, cause the at least one processor to control a device to perform a method as described herein.

According to another aspect of the invention, there is provided an apparatus for configuring the step of scanning a beam of photons or particles across a patterning device for exposing a pattern onto a substrate, the apparatus comprising a processor configured to execute computer program code to perform the method of: determining a spatial resolution of a patterning correction configured to improve a quality of the exposure; and the method of determining the spatial dimension of the beam based on the determined spatial resolution of the patterning correction.

Optionally, there is provided an apparatus for use in semiconductor manufacturing comprising the apparatus described above.

Optionally, there is provided a lithographic cell system comprising the apparatus for use in semiconductor manufacturing.

According to another aspect of the invention, there is provided an apparatus configured to obtain measurement data relating to one or more properties of a pattern exposed on a substrate, determine a spatial resolution of a patterning parameter of the pattern based on the measurement data, and determine a spatial dimension of a photon beam or particle beam of a patterning device based on the determined spatial resolution.

Optionally, there is provided an apparatus for use in semiconductor manufacturing comprising the apparatus described in the preceding paragraph.

Optionally, there is provided a lithographic cell system comprising the apparatus for use in semiconductor manufacturing.

According to another aspect of the invention, there is provided a method for determining the position of a feature within a functional area on a patterning device configured for use in a lithographic process, the method comprising: determining a location of a feature within the functional region based at least in part on a dependence of a spatial characteristic of a process performed after the lithographic process on the location of the feature.

According to another aspect of the present invention there is provided a patterning device comprising features positioned within the functional region using a method according to the preceding aspect.

According to another aspect of the invention, there is provided a method for determining a preferred orientation of a die relative to another die on a patterning device configured for use in patterning a substrate, the method comprising: after performing the patterning process, determining the preferred orientation of the die based on a topography of the substrate.

Drawings

Embodiments of the invention will now be described, by way of example only, with reference to the accompanying schematic drawings in which:

FIG. 1 depicts a schematic overview of a lithographic apparatus;

FIG. 2 depicts a schematic overview of a lithography unit;

fig. 3 depicts a schematic representation of global lithography, which represents the cooperation between three key technologies to optimize semiconductor manufacturing;

FIG. 4 depicts a flow chart representing steps in a method for configuring the spatial dimensions of a scanning beam; and

fig. 5a, 5b and 5c depict diagrams of example overlay errors to be corrected.

Fig. 6a and 6b depict the effect of changing the orientation of a die relative to a die adjacent in the scan direction on the fingerprint of the focus parameter.

Detailed Description

Herein, the terms "radiation" and "beam" are intended to encompass all types of electromagnetic radiation, including ultraviolet radiation (e.g. having a wavelength of 365nm, 248nm, 193nm, 157nm or 126 nm) and extreme ultraviolet radiation (EUV, e.g. having a wavelength in the range of about 5nm to 100 nm).

The terms "reticle", "mask" or "patterning device" as used herein may be broadly interpreted as referring to a generic patterning device that can be used to impart an incident radiation beam with a patterned cross-section corresponding to a pattern to be created in a target portion of the substrate. The term "light valve" may also be used in the context of such content. Examples of other such patterning devices, in addition to typical masks (transmissive or reflective, binary, phase-shifting, hybrid, etc.), include programmable mirror arrays and programmable LCD arrays.

FIG. 1 schematically depicts a lithographic apparatus LA. The lithographic apparatus LA comprises: an illumination system (also referred to as an illuminator) IL configured to condition a radiation beam B (e.g. UV radiation, DUV radiation or EUV radiation); a mask support (e.g. a mask table) MT constructed to support a patterning device (e.g. a mask) MA and connected to a first positioner PM configured to accurately position the patterning device MA in accordance with certain parameters; a substrate support (e.g. a wafer table) WT constructed to hold a substrate (e.g. a resist-coated wafer) W and connected to a second positioner PW configured to accurately position the substrate support in accordance with certain parameters; and a projection system (e.g. a refractive projection lens system) PS configured to project a pattern imparted to the radiation beam B by patterning device MA onto a target portion C (e.g. comprising one or more dies) of the substrate W.

In operation, the illumination system IL receives a radiation beam from a radiation source SO, for example, via a beam delivery system BD. The illumination system IL may include various types of optical elements, such as refractive, reflective, magnetic, electromagnetic, electrostatic and/or other types of optical elements, or any combination thereof, for directing, shaping, and/or controlling radiation. The illuminator IL may be used to condition the radiation beam B to have a desired spatial and angular intensity distribution in its cross-section at the plane of the patterning device MA.

The term "projection system" PS as used herein should be broadly interpreted as encompassing any type of projection system, including refractive, reflective, catadioptric, distortion, magnetic, electromagnetic and electrostatic optical systems, or any combination thereof, as appropriate for the exposure radiation being used, or for other factors such as the use of an immersion liquid or the use of a vacuum. Any use of the term "projection lens" herein may be considered as synonymous with the more general term "projection system" PS.

The lithographic apparatus LA may be of the following type: wherein at least a portion of the substrate may be covered by a liquid having a relatively high refractive index, e.g. water, so as to fill a space between the projection system PS and the substrate W, also referred to as immersion lithography. More information on immersion techniques is given in US6952253, which is incorporated herein by reference.

The lithographic apparatus LA may also be of a type having two or more substrate supports WT (also known as "dual stage"). In such "multi-stage" machines the substrate supports WT may be used in parallel, and/or steps may be performed on a substrate W positioned on one of the substrate supports WT in preparation for a subsequent exposure of the substrate W while another substrate W on another substrate support WT is being used to expose a pattern on another substrate W.

In addition to the substrate support WT, the lithographic apparatus LA may also include a measurement platform. The measuring platform is arranged to hold a sensor and/or a cleaning device. The sensor may be arranged to measure a property of the projection system PS or a property of the radiation beam B. The measurement platform may hold a plurality of sensors. The cleaning device may be arranged to clean a part of the lithographic apparatus, for example a part of the projection system PS or a part of the system providing the immersion liquid. The measurement platform may be moved under the projection system PS while the substrate support WT is away from the projection system PS.

In operation, the radiation beam B is incident on the patterning device MA (e.g., mask) held on the mask support MT and is patterned by the pattern (design layout) presented on the patterning device MA. Having traversed the mask MA, the radiation beam B passes through the projection system PS, which focuses the beam onto a target portion C of the substrate W. With the aid of the second positioner PW and position measurement system IF, the substrate support WT can be moved accurately, e.g. so as to position different target portions C in the path of the radiation beam B in focused and aligned positions. Similarly, the first positioner PM and possibly another position sensor (which is not explicitly depicted in fig. 1) can be used to accurately position the patterning device MA with respect to the path of the radiation beam B. Patterning device MA may be aligned to substrate W using mask alignment marks M1, M2 and substrate alignment marks P1, P2. Although substrate alignment marks P1, P2 as illustrated occupy dedicated target portions, the substrate alignment marks may be positioned in spaces between target portions. When substrate alignment marks P1, P2 are positioned between target portions C, these substrate alignment marks are referred to as scribe-lane alignment marks.

As shown in fig. 2, the lithographic apparatus LA may form part of a lithographic cell LC (sometimes also referred to as a lithographic cell or (lithographic) cluster), which typically also includes an apparatus to perform pre-exposure and post-exposure processes on a substrate W. Conventionally, these apparatuses include a spin coater SC to deposit a resist layer, a developer DE to develop an exposed resist, a chill plate CH, for example, to adjust the temperature of the substrate W (e.g., to adjust the solvent in the resist layer), and a bake plate BK. The substrate handler or robot RO picks up the substrate W from the input/output ports I/O1, I/O2, moves the substrate between different process tools, and transfers the substrate W to the feed table LB of the lithographic apparatus LA. The devices in the lithography unit, which are also commonly referred to as coating and development systems, are typically under the control of a coating and development system control unit TCU, which itself may be controlled by a supervisory control system SCS, which may also control the lithographic apparatus LA, e.g. via a lithographic control unit LACU.

To properly and consistently expose a substrate W exposed by a lithographic apparatus LA, it is desirable to inspect the substrate to measure properties of the patterned structure, such as overlay error between subsequent layers, line thickness, Critical Dimension (CD), and the like. For this purpose, an inspection tool (not shown in the figures) may be included in the lithography unit LC. If an error is detected, adjustments may be made, for example, to the exposure of subsequent substrates or other processing steps to be performed on the substrates W, particularly if inspection is performed before other substrates W of the same lot or batch are still to be exposed or processed.

The inspection apparatus, which may also be referred to as a metrology apparatus, is used to determine properties of the substrate W and, in particular, how the properties of different substrates W vary or how properties associated with different layers of the same substrate W vary from layer to layer. The inspection apparatus may alternatively be configured to identify defects on the substrate W, and may for example be part of the lithographic cell LC, or may be integrated into the lithographic apparatus LA, or may even be a separate device. The inspection apparatus may measure properties on the latent image (the image in the resist layer after exposure), or on the semi-latent image (the image in the resist layer after the post-exposure bake step PEB), or on the developed resist image (where either the exposed or unexposed portions of the resist have been removed), or even on the etched image (after a pattern transfer step such as etching).

Typically, the patterning process in the lithographic apparatus LA, which requires a high accuracy of the size and placement of the structures on the substrate W, is one of the most critical steps in the process. To ensure such high accuracy, the three systems may be combined in a so-called "global" control environment as schematically depicted in fig. 3. One of these systems is the lithographic apparatus LA, which is (actually) connected to the metrology tool MT (second system) and to the computer system CL (third system). The key to this "global" environment is to optimize the cooperation between the three systems to enhance the overall process window and to provide a tight control loop to ensure that the patterning performed by the lithographic apparatus LA remains within the process window. The process window defines a range of process parameters (e.g., dose, focus, overlay) within which a particular manufacturing process produces a defined result (e.g., a functional semiconductor device), typically within a range that allows process parameter variations in a lithographic process or a patterning process.

The computer system CL may use (parts of) the design layout to be patterned to predict which resolution enhancement technique will be used, and perform computational lithography simulations and calculations to determine which mask layout and lithographic apparatus set the maximum overall process window (depicted in fig. 3 by the double arrow in the first scale SC 1) that implements the patterning process. Typically, resolution enhancement techniques are arranged to match the patterning possibilities of the lithographic apparatus LA. The computer system CL may also be used to detect where the lithographic apparatus LA is currently operating within the process window (e.g. using input from the metrology tool MT) to predict whether there may be a defect due to, for example, sub-optimal processing (depicted in fig. 3 by the arrow pointing to "0" in the second scale SC 2).

The metrology tool MT may provide input to the computer system CL to enable accurate simulation and prediction, and may provide feedback to the lithographic apparatus LA to identify, for example, possible drifts in the calibration state of the lithographic apparatus LA (depicted in fig. 3 by the plurality of arrows in the third scale SC 3).

As mentioned above, data obtained from the metrology tool may be used to determine the nature of the exposed image. The data may relate to properties such as overlay, critical dimension, dose, focus, etc. The data may in turn be used to determine whether there is an exposure error based on one or more of overlay, critical dimension, dose, or focus properties. Such errors may be caused by the settings of the apparatus or they may be present on the substrate, for example due to imperfections on the wafer and/or the process used to prepare the wafer for exposure or the deposition of previous pattern layers. The measurement data may also be used to determine whether adjustments may be made to an exposure recipe to improve future exposures of patterns on substrates (which may be the same substrate, or different but substantially the same substrate), for example to remove or reduce errors detected for one or more properties. Recipe adjustment may also be referred to as correction, which may apply to global exposure conditions across the substrate, or to more local exposure conditions (e.g., across a smaller area on the substrate). The size of the area on the substrate that requires a particular correction determines the degree to which the system can correct the measured error in one or more parameters. Therefore, in the case where the size of an area on the wafer where a specific correction is desired is small, it is desirable to increase the correction resolution. In an example, a ruler of an area on a substrate associated with a functional block of a deviceCun measurement 2 x 2mm². To provide the functional block specific correction, a correction resolution at the sub-mm scale is required. The achievable correction resolution may be affected by the properties of the radiation beam and may in particular depend on one or more of the size and shape of the radiation beam irradiating the patterning device.

In accordance with the present disclosure, methods and apparatus are provided herein to determine and set the spatial dimensions of a radiation beam used to form a pattern on a substrate via exposure of a patterning device based on a desired spatial resolution of a correction to be applied to an exposure recipe. Fig. 4 shows steps in a method for determining a magnitude of a spatial parameter of a radiation beam, which is elucidated in more detail below. In step 400, one or more properties of the exposed pattern as described above are measured. In step 402, a system, such as computer system CL, determines an error in one or more of the measured properties. In step 404, the system determines the corrections to be applied to subsequent exposures to remove or reduce these errors. In step 406, the highest resolution of the identified corrections to be applied is determined. In step 408, the spatial dimensions of the radiation beam required to achieve this correction resolution are identified and set in the apparatus. In step 410, the pattern is exposed using the set spatial dimension of the radiation beam. The resulting post-exposure image may be measured by a metrology device to determine the correction, and the process may be repeated.

The radiation beam B may be a photon beam or a particle beam. Such particles may be, for example, electrons or ions. The radiation beam B may be incident on the patterning device MA. After passing through the patterning device, the radiation beam passes, in transmission or reflection, through a projection system PS, which focuses the beam onto a substrate W, which may be positioned on the substrate support table WT. In some cases, when the radiation beam B irradiates the entire patterning device, patterning device MA and substrate W may be held fixed relative to each other so that they are exposed simultaneously. This mode of operation may be referred to as a step mode. In a single static exposure, an irradiation pattern on the patterning device is projected onto a target portion C of the substrate W. After exposure of the pattern, the substrate W can be shifted relative to the patterning device MA and the pattern can likewise be exposed onto a different target portion C' of the substrate W. In step mode, the maximum size of the target section C that can be exposed by the radiation beam B in a single static exposure is determined by the exposure field limit.

In some cases, the radiation beam does not irradiate the entire patterning device at the same time, but is scanned across the patterning device to expose the pattern step by step. This mode of operation may be referred to as a scan mode. Scanning the radiation beam B over the patterning device can be achieved by holding the radiation beam stationary and moving the patterning device MA with respect to the beam. The substrate W may be moved in synchronism with the patterning device MA. The synchronized movement of the patterning device MA and the substrate W may take into account properties of the projection system PS, such as, for example, (de-) magnification and/or image reversal.

The scanning may be performed in a direction, which may be a linear direction. A linear direction perpendicular to the linear scanning direction may be referred to as a non-scanning direction. The radiation beam B may extend to cover the entire size of the patterning device MA in a non-scanning direction. The dimension of the radiation beam B in the scan direction may be referred to as the length. When incident on the patterning device MA, the size and shape of the cross-section of the beam in the plane of the patterning device can be referred to as the slit of the radiation beam B.

The shape and size of the slit may be determined in the area of the exposure slit. In particular, the exposure slit area may be used to determine the length of the slit. The exposure slit area may be positioned between the source of the radiation beam and the patterning device MA. Beam shaping actions affecting properties other than slit length can be performed inside and/or outside the exposed slit area. Alternatively or additionally, the shaping of the radiation beam B may be performed after the radiation beam B passes through the patterning device MA. Beam shaping techniques and methods may be used to alter the shape of the slit, and the resulting slit shape may include, for example, a square shape, a rectangular shape, or a trapezoidal shape. The size of the slit in the non-scanning direction in the plane of the patterning device may be in the order of cm, for example 3 cm. The slit length may be of the order of mm, for example 1mm to 10mm, or 1mm to 20 mm. The required control of the slit length may be of the order of mm, for example the slit length is selected to be between 1mm and 20 mm. The setting of the slit length may have a resolution in the order of 1mm or 0.1 mm. One or both of mechanical (e.g., beam stop) and optical (e.g., beam shaping optics) methods and tools may be used to shape the beam to define the slit. The exposure slit area may be located in a plane in the path of the radiation beam, which may be a plane conjugate to the plane of the patterning device MA. A beam stop positioned in the exposure slit area may be used to define the slit size and shape, thereby blocking the area of the beam such that only a portion of the beam cross-section is obtained, a slit having the desired shape and size being obtained at the patterning device. The beam stop may comprise one or more vanes, which may be movable vanes that can be moved in and out of at least a portion of the path of the radiation beam to block or unblock a portion of the radiation beam. The beam stop can be positioned in a conjugate plane of the patterning device MA for the radiation beam B, so that adjustments to the shape of the beam are transferred to the slit in the plane of the patterning device MA. Alternatively or additionally, beam shaping optics may be used to set the shape and size of the beam. The exposure slit region that determines the shape and size of the slit may comprise a three-dimensional region (e.g. a region containing elements of beam shaping optics) along a portion of the propagation path of the radiation beam B. Beam shaping optics have the advantage of not blocking off part of the power of the radiation beam compared to the beam stop. However, beam stops may be cheaper and easier to implement than beam shaping optics. In a lithographic apparatus as disclosed herein, the power provided by the source may be sufficient such that blocking part of the beam is acceptable and does not hinder the performance of the apparatus.

The computer system CL may be configured to determine a correction to be applied to the exposure recipe based on the measurement results done by the metrology system. The computer system CL may further be configured to determine a minimum spatial resolution of the determined correction. Based on this determined minimum correction resolution, the computer system CL may determine to adjust one or more exposure parameters to achieve this resolution and instruct the associated exposure system to apply correction to one or more subsequent exposures. Such a system may include, for example, a portion of a lithographic apparatus configured to set a dose, focus, position, direction, size, and/or shape of a radiation beam. Applying adjustments to the exposure may be achieved in several ways, for example by using an actuator to change the shape and/or size of the radiation beam so that corrections can be implemented during scanning of the irradiation patterning device.

As mentioned above, one of the properties that may affect the achievable correction resolution of the system is the size and shape of the radiation beam B, and in particular the size and shape of the slits. The length of the slit may affect the resolution and mechanism of correction that can be achieved. If the length of the slit is large, a large portion of the substrate is exposed simultaneously, and the correction applied to the beam will affect a large portion of the resulting exposed image. The smaller corrections applied by slits having a larger length can be averaged by scanning. In scan mode, the corrections applied to the recipe are convolved for the length of the slit scanned over the area where the corrections were applied during exposure. In an example implementation, the computer system CL determines the size of the minimum correction to be applied. Based on the scan speed, the computer system CL can determine a duration of correction to be applied to the beam, e.g., 1 ms. The length of the slit and the scanning speed further determine the duration of time a point on the patterning device is exposed to a portion of the radiation beam. For a set scanning speed, if the slit length is large, the exposure time for the position to be patterned on the substrate will be longer than for the case of the same scanning speed, where the slit length is small. For larger slit lengths, the total exposure time may be, for example, 10ms or 30 ms. In the example case described here, the 1ms correction applied to the position, which would not be successfully implemented, can be averaged over the remaining 9ms exposure of the position to the rest of the radiation beam B. Furthermore, during 1ms of the correction being applied, this correction has been applied to the area of the substrate irradiated by the slit, which area becomes larger with increasing length. Therefore, increasing the slit length negatively affects the correction resolution due to the longer averaging effect of the scan, and thereby increases the area where the correction is applied.

As disclosed herein, the resolution of the convolution correction is preferably close to the resolution of the correction C to be applied. This can be achieved by setting the slit length S such that S²+C²＜aC²Where a is a scalar number greater than and close to 1. In the example, the correction size C is 1mm, and the maximum allowable value of a is set to 1.1. This selected value of a determines the corresponding maximum allowable slot length aC under those conditions²-C²＞S²Thus, for a determined correction C of 1mm, S must be less thanTo meet the requirements set by the selected a. For the known settings of the values C and S, the resulting lowest value of a can be regarded as a relative measure for the degree to which the correction C is achievable for the slit length S.

Reducing the length of the slit means exposing a smaller area of the substrate to be patterned at any one time, meaning that the correction applied to the beam irradiates a smaller area. Thus, the correction applied to the beam is applied to a smaller area. Furthermore, if the length of the beam is small, the length of time that any one location of the substrate is exposed to light is reduced, meaning that the correction can be applied for a shorter amount of time without being averaged over the remainder of the beam scan. Corrections to the radiation beam can be applied to smaller areas on the patterned substrate with shorter exposure areas and shorter durations, thus increasing the resolution at which corrections can be implemented to be applied.

As described herein, some embodiments relate to the selection of the length of the slit, where such selection may affect the productivity and quality of the resulting exposed image. The advantages of shorter slit lengths include the ability to apply higher resolution corrections, resulting in higher accuracy of exposure. The advantages of a larger slit length compared to a smaller length include the possibility of obtaining higher throughput because a larger area of the pattern is exposed simultaneously. Another advantage of the larger length is that the dose variation within the slit is averaged out to achieve more uniform exposure and increased dose control.

The effect of the slit length variation will now be described in more detail with respect to an example for correcting overlay errors, as illustrated in fig. 5a, 5b and 5 c. The horizontal axis represents the scanning direction of the beam along the patterning device. The vertical axis represents overlay error in the scan direction of the exposed pattern on the substrate. Both axes are expressed in arbitrary units. In fig. 5a, the example overlay error is constant along the scan direction. To correct for this constant error, a constant adjustment along the scan may be implemented to the alternative. The ability to implement this correction will not be limited by the slit length, since each point along the scan direction applies the same adjustment. Indeed, a larger slit length and averaging of dose variation within the slit may be beneficial to increase throughput.

In fig. 5b, the example overlay error is not constant along the scan direction and instead possesses a periodicity, varying linearly along the scan direction. As set forth above, the slit length will affect the resolution of the correction. Fig. 5c also shows an overlay error that varies periodically linearly along the scan direction. The example error of fig. 5c has a higher rate of change of overlay error than fig. 5b, which means that a high resolution correction is needed to address this situation. The maximum slit length at which the correction of fig. 5c can be achieved is smaller than the maximum slit length at which the correction of fig. 5b can be achieved. The example errors of fig. 5b and 5c have a linearly varying profile. However, the methods and apparatus disclosed herein address the corrected spatial dimension to be applied to the exposure. Thus, other non-linear error profiles may also be processed using the methods and apparatus described above.

The structures deposited on the substrate during lithographic exposure may have dimensions in the nanometer or micrometer range. To increase the production throughput of the lithographic process, a plurality of these structures may be positioned on the same patterning device MA and patterned during the same exposure. On the patterning device, a structure or collection of structures that is separate from other structures on patterning device MA may be referred to as a die. An example size of a die on a patterning device is 10mm x 10mm(100mm²) The die size may be larger or smaller than these dimensions and may have a square, rectangular, or other shape. A plurality of dies may be arranged in an array on the patterning device. Each die includes a pattern that may be independent of other dies on the patterning device. Because the structures contained within a die may differ from the structures of other dies, the corrections to be applied may differ from die to die. To be able to apply intra-die corrections, i.e. different corrections to different dies, the slit length may be at least as small as to achieve a correction resolution smaller than the size of the die in the scan direction.

Alternatively or in addition to providing a slit length small enough to enable in-die correction, it is proposed to improve the correction force of process parameters across the substrate by configuring the patterning device used in the patterning of the substrate.

Typically, the patterning device comprises a plurality of functional areas, which comprise (product) features.

The functional areas may be associated with certain functionality of the semiconductor device required to implement, for example, first and second functional areas providing (cache) memory, a third functional area comprising a Graphics Processing Unit (GPU) and a fourth functional area comprising logic to control the memory.

Alternatively, the functional area may be associated with a die area comprising product features of (a layer of) the entire functional semiconductor device. Each functional region is repeatedly supplied to the patterning device. The patterning device may then comprise, for example, 6 functional areas (dies); 3 dies in the scan direction and 2 dies in the direction perpendicular to the scan direction across the patterning device.

In many cases, the distribution of features across the functional area affects the characteristics of the process performed after the exposure step of the patterning device. For example, the density of features across the functional area may vary along the scan direction, thereby significantly affecting the substrate topography after undergoing etch, deposition, and polishing (CMP) steps. Topography is the substrate height profile across the exposure field of a substrate undergoing a patterning process (performed by a lithographic apparatus).

In fig. 6a, an example of 3 identical dies oriented in a head-to-tail configuration along the scan direction is given. Each die has an associated feature layout, resulting in a focus profile along the scan direction, as indicated by the expected focus values associated with the six measurement points (points in the graph) (per die). In the example depicted by fig. 6a, the left-hand point of each die is associated, for example, by the peripheral structure of the die, and the five points immediately adjacent to the periphery are associated with the cell structure of the die.

As is clear from fig. 6a, a steep gradient of the focus profile occurs between the dies. For example, the focus step between die 1 and die 2 may be up to 100nm in a translation as small as 1mm along the scan direction. In particular, for 3D NAND manufacturing processes involving deposition, etching and polishing of thick layers, they can have substantial amplitude between the focus steps.

In the case where the focus step is too large and/or is performed within too small a spatial scale, the lithographic apparatus used in subsequent lithographic process steps may not be equipped to accurately control the focus of the substrate as the patterning device is scanned.

It is proposed to configure the patterning device such that the location of a feature within a functional area (that is an area of the semiconductor device defined by a die or function) is selected in accordance with a desired spatial scale of a characteristic of a process performed after exposure of the patterning device. In particular, the location of features within the functional region is selected such that focus steps, overlay, Edge Placement Error (EPE), Critical Dimension (CD), or dose are expected to occur at spatial scales that may be sufficient to be corrected by the control means of the lithographic process.

Where the functional area is a die, effective positioning of the features may be achieved by rotating or mirroring an existing layout of features of a series of one or more dies.

Fig. 6b depicts the expected focus profile in the case where the second die (die 2) has a rotated (180 degrees around center) or mirrored feature layout relative to die 1 and die 3. As can be derived from fig. 6b, there are no longer any focus steps between the dies, only focus steps within each die (due to e.g. differences between the peripheral structure and the cell structure). Furthermore, the spatial scale along which the focus step between die 2 and die 3 is generated (in the scan direction) has doubled compared to the initial focus step associated with the initial feature layout of die 2 (fig. 6 a). This doubling effectively reduces the gradient of focus variation between dies, which makes the focus step easier to correct by a focus control system included within the scanning lithographic apparatus.

In an embodiment, the patterning device comprises a plurality of functional regions, wherein the layout of features associated with a first functional region is mirrored and/or rotated compared to the layout of features associated with a second functional region adjacent to the first functional region.

To this end, the given example (in particular, as depicted in fig. 6a and 6 b) discloses a specific embodiment of the general concept of distributing features over at least one functional area based on an expected dependency of the spatial characteristics of the subsequent process on the location of the features.

The distribution of features over the functional area (e.g., the location of the features) is typically defined during the design process of the patterning device. Empirical or solid models of process steps such as polishing, etching, and deposition of layers, as known in the art of semiconductor fabrication, can be used to predict spatial characteristics (e.g., configuration of feature locations) given a certain feature layout. After determining the location of the features included within the at least one functional region, the patterning device may be manufactured by providing the features to a substrate of the patterning device, typically using a lithographic process.

Furthermore, the distribution of features over the at least one functional area may be determined in combination with the selection of the spatial dimensions of the beam used in the patterning of the substrate. The positioning of features on the functional area may be performed, for example, based on an existing layout of features on the functional area, and updated only when the spatial resolution of the determination of the patterning correction is not high enough to provide semiconductor devices produced using the lithographic process. The updated position of the feature may then be determined based on, for example, a rotation of the existing layout of the feature, such that the spatial resolution of the spatial characteristics of the process performed after the lithographic process does not exceed the correction capability.

In an embodiment, the location of the feature within the functional area on the patterning device is based, at least in part, on the spatial resolution of the patterning correction and the spatial characteristics of the process performed after exposing the pattern onto the substrate.

In an embodiment, the position of a feature on a functional region on a patterning device configured for use in a lithographic process is determined based at least in part on a dependence of a spatial characteristic of a process performed after the lithographic process on the position of the feature.

In an embodiment, the patterning device comprises a plurality of functional areas, each functional area representing a separate die.

In an embodiment, the position of a feature within a functional area is determined by a rotation of a layout of the feature associated with another functional area on the patterning device.

In an embodiment, the rotation is a 180 degree rotation around the center of the functional area.

In an embodiment, the location of a feature within a functional area is determined by mirroring the layout of a feature associated with another functional area on the patterning device.

In an embodiment, the mirroring process is defined with respect to an axis of symmetry of the other functional area.

In an embodiment, the axis of symmetry is perpendicular to a scanning direction of the lithographic apparatus used in the lithographic process.

In an embodiment, the process performed next to the lithographic process is a second lithographic process, and the spatial characteristic is a control capability for a parameter associated with the second lithographic process.

In an embodiment, the parameter associated with the second lithographic process is one of: focus, critical dimension, overlay, edge placement error, dose.

In an embodiment, the process performed subsequent to the lithographic process is an etching or deposition process, and the spatial characteristic is a topography of the substrate after undergoing the lithographic process and the etching or deposition process.

In an embodiment, the patterning device is manufactured according to any suitable embodiment for determining the position, based on the determined position of the feature on the at least one functional area.

In an embodiment, the patterning device comprises a feature that is positioned within the functional area using a method of manufacturing the patterning device.

In an embodiment, a preferred orientation of a die relative to another die on a patterning device configured for use in patterning a substrate is determined, the method comprising: a preferred orientation of the die is determined based on a topography of the substrate after performing the process of patterning the substrate.

In an embodiment, the patterning device is configured for use in a process of producing a 3D NAND device.

In an embodiment, the profile is associated with a height profile across one or more die areas on the substrate.

In an embodiment, the preferred orientation of the die is associated with a height profile of the substrate, which may be corrected by available focus control mechanisms of the patterning process.

Other embodiments of the invention are disclosed in the following list of numbered aspects:

1. a method of configuring a step of scanning a photon beam or particle beam across a patterning device for exposing a pattern onto a substrate, the method comprising:

determining a spatial resolution of a patterning correction configured to improve a quality of an exposure; and

the spatial dimensions of the photon beam or particle beam are determined based on the determined spatial resolution of the patterning correction.

2. The method of aspect 1, wherein configuring the steps is performed in a lithographic apparatus.

3. The method of aspect 2, wherein the patterning correction comprises a correction to mitigate the effects of one or more of alignment, overlay, critical dimension, dose, and focus.

4. The method according to any preceding aspect, wherein the patterning correction is determined based on one or more measurements made on another substrate.

5. The method of any preceding aspect, wherein the beam cross-section defines a slit at the patterning device.

6. The method of aspect 5, wherein the photon beam or particle beam passes through an exposure slit region for forming the shape of the slit.

7. The method according to any one of aspects 5 or 6, wherein the spatial dimension of the photon beam or particle beam is correlated with the length of the slit in the scanning direction.

8. The method of aspect 1, wherein the spatial dimension of the photon beam or particle beam is indirectly proportional to the spatial resolution of the patterning correction.

9. The method of aspect 7, wherein according to S²+C²≤1.1C²The length S of the slit is related to the spatial resolution C of the patterning correction.

10. The method of any preceding aspect, wherein the patterning device comprises a plurality of dies to be exposed to the substrate at a plurality of sites, and wherein the spatial resolution of the patterning correction is less than the size of one of the plurality of dies.

11. The method of any preceding aspect, wherein the patterning device comprises a mask or reticle.

12. The method according to any preceding aspect, wherein the spatial dimensions of the photon beam or particle beam are controlled by a beam stop.

13. The method of aspect 12, wherein the bundle blocker comprises a plurality of movable vanes.

14. The method of aspect 13, wherein the patterning device is positioned at an image plane of the beam, and wherein the beam stop is positioned in a conjugate plane to the image plane.

15. The method of any preceding aspect, wherein the spatial dimension of the beam is adjusted using variable beam shaping optics.

16. The method of any preceding aspect, further comprising: the beam is scanned over a patterning device to expose a pattern onto the substrate.

17. The method of aspect 16, further comprising: one or more properties of the beam are adjusted to apply the patterning correction during scanning of the beam across the patterning device.

18. The method of aspect 16 or 17, wherein scanning the beam across the patterning device comprises: one of the patterning device and the beam is moved relative to the other of the patterning device and the beam.

19. An electronic data carrier comprising instructions which, when executed on at least one processor, cause the at least one processor to control a device to perform the method according to any one of aspects 1 to 18.

20. An apparatus for configuring the step of scanning a beam of photons or particles across a patterning device for exposing a pattern onto a substrate, the apparatus comprising a processor configured to execute computer program code to perform the method of:

determining a spatial resolution of a patterning correction configured to improve a quality of an exposure; and

the spatial dimensions of the photon beam or particle beam are determined based on the determined spatial resolution of the patterning correction.

21. An apparatus for use in semiconductor manufacturing comprising the apparatus of aspect 20.

22. A lithography cell system comprising an apparatus for use in semiconductor manufacturing according to aspect 21.

23. An apparatus, the apparatus configured to:

obtaining measurement data relating to one or more properties of a pattern exposed on a substrate;

determining a spatial resolution of patterning parameters of the pattern based on the measurement data; and

the spatial dimensions of the photon beam or particle beam of the patterning device are determined based on the determined spatial resolution.

24. An apparatus for use in semiconductor manufacturing comprising the apparatus of aspect 23.

25. A lithography cell system comprising an apparatus for use in semiconductor manufacturing according to aspect 24.

26. A method for determining the location of a feature within a functional area on a patterning device configured for use in a lithographic process, the method comprising: the location of the feature within the functional region is determined based at least in part on a dependence of spatial characteristics of a process performed subsequent to the lithographic process on the location of the feature.

27. The method of aspect 26, wherein the patterning device comprises a plurality of functional regions, each functional region representing an individual die.

28. The method of aspect 26 or 27, wherein the position of a feature within a functional area is determined by a rotation of a layout of the feature associated with another functional area on the patterning device.

29. The method of aspect 28, wherein the rotation is a 180 degree rotation about the center of the functional area.

30. The method of aspect 26 or 27, wherein the location of a feature within a functional area is determined by mirroring a layout of a feature associated with another functional area on the patterning device.

31. The method of aspect 30, wherein the mirroring process is defined with respect to an axis of symmetry of the another functional area.

32. The method of aspect 31, wherein the axis of symmetry is perpendicular to a scanning direction of a lithographic apparatus used in the lithographic process.

33. The method according to any of aspects 26 to 32, wherein the process is a second lithographic process and the spatial characteristic is a control capability of a parameter associated with the second lithographic process.

34. The method of aspect 33, wherein the parameter is one of: focus, critical dimension, overlay, edge placement error, dose.

35. The method of any one of aspects 26 to 32, wherein the process is an etching or deposition process and the spatial characteristic is a topography of the substrate after undergoing the lithography process and the etching or deposition process.

36. A patterning device comprising a feature positioned within a functional region using a method according to any of aspects 26 to 35.

37. A method of manufacturing a patterning device, the method comprising the step of applying features within functional areas on the patterning device, wherein the features are positioned according to the method of any of aspects 26 to 35.

38. A device manufacturing process comprising the step of patterning a substrate according to the patterning device of aspect 36.

39. A method for determining a preferred orientation of a die relative to another die on a patterning device configured for use in patterning a substrate, the method comprising: a preferred orientation of the die is determined based on the topography of the substrate after the patterning process is performed.

40. The method of aspect 39, wherein the patterning device is configured for use in a process of producing a 3D NAND device.

41. The method of aspect 39, wherein the topography is associated with a height profile across one or more die areas on the substrate.

42. The method of aspect 41, wherein the preferred orientation of the die is associated with a height profile that can be corrected by available control mechanisms of the patterning process.

43. The method of any of aspects 1-25, further comprising: the patterning device is configured by positioning features within functional areas on the patterning device based, at least in part, on a spatial resolution of the patterning correction and/or a spatial characteristic of a process performed after exposing the pattern onto the substrate.

44. A patterning device, the patterning device comprising a plurality of functional regions, wherein the layout of features associated with a first functional region is mirrored and/or rotated compared to the layout of features associated with a second functional region adjacent to the first functional region.

45. The patterning device of aspect 44, wherein the layout of features associated with a first functional region is mirrored relative to an axis of symmetry of the first functional region compared to the layout of features associated with a second functional region.

46. The patterning device of aspect 44, wherein the layout of features associated with a first functional region is rotated about a center of the first functional region compared to the layout of features associated with a second functional region.

47. The patterning device of any one of aspects 44 to 46, wherein the functional region is a die.

48. The patterning device of any one of aspects 44 to 47, wherein the patterning device is configured for use in a 3D NAND manufacturing process.

49. The method of aspect 1, wherein the patterning device is according to any one of aspects 36 or 44 to 48.

The methods and apparatus described herein may be used for lithographic fabrication of integrated circuits, which may be, for example, 3D NAND structures.

The methods described herein may be in the form of instructions included on an electronic data carrier. The electronic data carrier may comprise hardware or a signal downloadable and transmittable via a wired or wireless connection medium.

Although specific reference may be made in this text to the use of lithographic apparatus in the manufacture of ICs, it should be understood that the lithographic apparatus described herein may have other applications. Possible other applications include the manufacture of integrated optical systems, guidance and detection patterns for magnetic domain memories, flat panel displays, Liquid Crystal Displays (LCDs), thin film magnetic heads, etc.

Although specific reference may be made in this text to embodiments of the invention in the context of lithographic apparatus, embodiments of the invention may be used in other apparatus. Embodiments of the invention may form part of a mask inspection apparatus, a metrology apparatus, or any apparatus that measures or processes an object such as a wafer (or other substrate) or a mask (or other patterning device). These devices may be generally referred to as lithographic tools. Such a lithography tool may use vacuum conditions or ambient (non-vacuum) conditions.

Although the foregoing may refer specifically to the use of embodiments of the invention in the context of optical lithography, it will be appreciated that the invention is not limited to optical lithography and may be used in other applications (e.g. imprint lithography) where the context allows.

While specific embodiments of the invention have been described above, it will be appreciated that the invention may be practiced otherwise than as described. The above description is intended to be illustrative, and not restrictive. Thus, it will be apparent to one skilled in the art that modifications may be made to the invention as described without departing from the scope of the claims set out below.