阅读说明：本技术 工艺腔室及半导体工艺设备 (Process chamber and semiconductor process equipment ) 是由 鲁艳成 韦刚 茅兴飞 于 2020-11-19 设计创作，主要内容包括：本发明提供了一种工艺腔室及半导体工艺设备。该工艺腔室应用于半导体工艺设备,包括：腔室本体、基座及卡盘组件；腔室本体内形成有反应腔,基座位于反应腔内,卡盘组件与基座连接,以用于承载待加工工件；基座包括基座本体和多个悬臂,悬臂分别连接反应腔的内壁和基座本体的外壁,且多个悬臂沿基座本体的周向间隔且均匀设置；腔室本体、基座本体和悬臂为一体成型结构,且由具有导电性和导热性的材质制成。本发明实现了大幅提高工艺腔室的射频回路均匀性及整体温度均匀性,进而大幅提高待加工工件的良率。(The invention provides a process chamber and semiconductor process equipment. The process chamber is applied to semiconductor process equipment and comprises: the device comprises a chamber body, a base and a chuck assembly; a reaction cavity is formed in the cavity body, the base is positioned in the reaction cavity, and the chuck assembly is connected with the base and used for bearing a workpiece to be processed; the base comprises a base body and a plurality of cantilevers, the cantilevers are respectively connected with the inner wall of the reaction cavity and the outer wall of the base body, and the cantilevers are uniformly arranged at intervals along the circumferential direction of the base body; the cavity body, the base body and the cantilever are of an integrated structure and are made of materials with electrical conductivity and thermal conductivity. The invention greatly improves the uniformity of the radio frequency loop and the overall temperature uniformity of the process chamber, thereby greatly improving the yield of the workpiece to be processed.)

1. A process chamber is applied to semiconductor process equipment and is characterized by comprising a chamber body, a base and a chuck assembly;

a reaction cavity is formed in the cavity body, the base is positioned in the reaction cavity, and the chuck assembly is connected with the base and used for bearing a workpiece to be processed;

the base comprises a base body and a plurality of cantilevers, the cantilevers are respectively connected with the inner wall of the reaction cavity and the outer wall of the base body, and the cantilevers are uniformly arranged at intervals along the circumferential direction of the base body;

the cavity body, the base body and the cantilever are of an integrally formed structure and are made of materials with electrical conductivity and thermal conductivity.

2. The process chamber of claim 1, wherein the base body has an open receiving cavity therein, a plurality of the cantilevers each have a mounting channel therein communicating with the receiving cavity, and the chamber body has a through hole therein communicating with the mounting channel;

the chuck assembly comprises an interface disc, and the interface disc is arranged on the opening of the accommodating cavity in a sealing mode.

3. The process chamber of claim 2, wherein a top surface of the cantilever defines an opening communicating with the mounting channel and the receiving cavity;

the interface disc comprises a disc main body and a plurality of cover plates arranged on the outer edge of the disc main body, the cover plates are uniformly arranged at intervals along the circumferential direction of the disc main body, the disc main body is arranged above the accommodating cavity in a sealing mode, and the cover plates are arranged above the installation channels in a sealing mode in a one-to-one correspondence mode.

4. The process chamber of claim 3, wherein the chuck assembly further comprises an electrostatic chuck disposed on the disk body for carrying the workpiece to be processed.

5. The process chamber of claim 3, wherein a positioning structure is disposed between the cover plate and the cantilever arm for defining a position of the interface disk.

6. The process chamber of claim 5, wherein the positioning structure comprises a positioning hole disposed on a bottom surface of the cover plate and a positioning post disposed on a top surface of the cantilever, the positioning hole and the positioning post being cooperatively positioned.

7. The process chamber of claim 3, wherein the base further comprises a bottom cover disposed at a bottom of the base body, wherein a top wall of the bottom cover and an inner wall of the base body define the receiving cavity;

and a maintenance port is arranged on the side surface of the cavity body corresponding to the bottom cover and communicated with the reaction cavity so as to be used for maintaining the bottom cover.

8. The process chamber of claim 3, wherein an outer diameter of the bottom cover tapers in a direction away from the base body.

9. The process chamber of any of claims 1 to 8, wherein the pedestal and the chamber body are made of an aluminum alloy.

10. A semiconductor processing apparatus comprising a radio frequency assembly and an exhaust assembly, further comprising the process chamber of any of claims 1 to 9, the radio frequency assembly disposed at a top of the chamber body and the exhaust assembly disposed at a bottom of the chamber body.

Technical Field

The application relates to the technical field of semiconductor processing, in particular to a process chamber and semiconductor processing equipment.

Background

At present, plasma equipment is widely used in the manufacturing process of semiconductors, solar cells, flat panel displays and the like. In the current manufacturing process, discharge types that have been used with plasma apparatuses are a Capacitively Coupled Plasma (CCP) type, an Inductively Coupled Plasma (ICP) type, and an electron cyclotron resonance plasma (ECR) type. These discharge types are widely used in Physical Vapor Deposition (PVD), Plasma etching and Chemical Vapor Deposition (CVD), Plasma Immersion Ion Implantation (PIII), and other semiconductor processing equipment. In order to ensure a better uniformity of the etching result from the center to the edge of the wafer, the process environment requires a good uniformity of the rf loop of the process chamber of the semiconductor processing equipment, as well as a good uniformity of the temperature of the process chamber.

However, in the prior art, the base is installed in the process chamber through the cantilever, and due to factors such as machining tolerance and assembly tolerance, a small gap is formed between the cantilever and the process chamber, so that the conductivity and the heat conductivity between the cantilever and the process chamber are poor, and the yield of wafers is low.

Disclosure of Invention

The application provides a process chamber and semiconductor process equipment aiming at the defects of the prior art, and aims to solve the technical problem that the wafer yield is low due to the fact that the conductivity and the heat conduction performance between a base and the process chamber are poor in the prior art.

In a first aspect, embodiments of the present application provide a process chamber for use in a semiconductor processing apparatus, comprising: the device comprises a chamber body, a base and a chuck assembly; a reaction cavity is formed in the cavity body, the base is positioned in the reaction cavity, and the chuck assembly is connected with the base and used for bearing a workpiece to be processed; the base comprises a base body and a plurality of cantilevers, the cantilevers are respectively connected with the inner wall of the reaction cavity and the outer wall of the base body, and the cantilevers are uniformly arranged at intervals along the circumferential direction of the base body; the cavity body, the base body and the cantilever are of an integrally formed structure and are made of materials with electrical conductivity and thermal conductivity.

In an embodiment of the present application, an open accommodating cavity is formed in the base body, a plurality of mounting channels communicated with the accommodating cavity are formed in each of the cantilevers, and a through hole communicated with the mounting channels is formed in the chamber body; the chuck assembly comprises an interface disc, and the interface disc is arranged on the opening of the accommodating cavity in a sealing mode.

In an embodiment of the present application, an opening communicating with the installation channel and the accommodating cavity is formed on a top surface of the cantilever; the interface disc comprises a disc main body and a plurality of cover plates arranged on the outer edge of the disc main body, the cover plates are uniformly arranged at intervals along the circumferential direction of the disc main body, the disc main body is arranged above the accommodating cavity in a sealing mode, and the cover plates are arranged above the installation channels in a sealing mode in a one-to-one correspondence mode.

In an embodiment of the present application, the chuck assembly further includes an electrostatic chuck disposed on the disk body for carrying the workpiece to be processed.

In an embodiment of the present application, a positioning structure is disposed between the cover plate and the suspension arm for defining a position of the interface disc.

In an embodiment of the present application, the positioning structure includes a positioning hole disposed on the bottom surface of the cover plate and a positioning column disposed on the top surface of the cantilever, and the positioning hole and the positioning column are cooperatively positioned.

In an embodiment of the present application, the base further includes a bottom cover, the bottom cover is disposed at the bottom of the base body, and a top wall of the bottom cover and an inner wall of the base body enclose the accommodating cavity; and a maintenance port is arranged on the side surface of the cavity body corresponding to the bottom cover and communicated with the reaction cavity so as to be used for maintaining the bottom cover.

In an embodiment of the present application, an outer diameter of the bottom cover gradually decreases in a direction away from the base body.

In an embodiment of the present application, the base and the chamber body are made of an aluminum alloy material.

In a second aspect, embodiments of the present application provide a semiconductor processing apparatus comprising a radio frequency assembly disposed at a top of a chamber body and an exhaust assembly disposed at a bottom of the chamber body, further comprising the process chamber as provided in the first aspect.

The technical scheme provided by the embodiment of the application has the following beneficial technical effects:

in the embodiment of the application, the cavity body, the base body and the cantilever adopt an integrated structure made of the same material, so that no gap exists between the cantilever and the cavity body, the electric conductivity between the cantilever and the cavity body is better, and the uniformity of a radio frequency loop of the process cavity is greatly improved; in addition, the heat conduction performance from the cavity body to the cantilever is improved, so that the integral temperature uniformity of the process cavity is greatly improved, and the yield of the workpiece to be processed is greatly improved. Furthermore, because the cavity body and the base adopt an integrated structure, the structural stability of the embodiment of the application can be improved, and the application and maintenance cost can be greatly reduced.

Additional aspects and advantages of the present application will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the present application.

Drawings

The foregoing and/or additional aspects and advantages of the present application will become apparent and readily appreciated from the following description of the embodiments, taken in conjunction with the accompanying drawings of which:

FIG. 1 is a schematic perspective view of a process chamber without a chuck assembly according to an embodiment of the present disclosure;

FIG. 2 is a schematic perspective view of a chuck assembly according to an embodiment of the present disclosure;

FIG. 3 is a schematic cross-sectional view of a process chamber provided in an embodiment of the present application;

fig. 4 is a schematic top view of a process chamber according to an embodiment of the present disclosure.

Detailed Description

Reference will now be made in detail to the present application, examples of which are illustrated in the accompanying drawings, wherein like reference numerals refer to the same or similar parts or parts having the same or similar functions throughout. In addition, if a detailed description of the known art is not necessary for illustrating the features of the present application, it is omitted. The embodiments described below with reference to the drawings are exemplary only for the purpose of explaining the present application and are not to be construed as limiting the present application.

It will be understood by those within the art that, unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. It will be further understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the prior art and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.

The following describes the technical solutions of the present application and how to solve the above technical problems with specific embodiments.

An embodiment of the present application provides a process chamber applied to a semiconductor processing apparatus, and a schematic structural diagram of the process chamber is shown in fig. 1 and 3, and includes: the device comprises a chamber body 1, a base 2 and a chuck assembly 3; a reaction cavity 11 is formed in the chamber body 1, the base 2 is located in the reaction cavity 11, and the chuck assembly 3 is connected with the base 2 for bearing a workpiece to be processed (not shown in the figure); the base 2 comprises a base body 21 and a plurality of cantilevers 22, the cantilevers 22 are respectively connected with the inner wall of the reaction chamber 11 and the outer wall of the base body 21, and the plurality of cantilevers 22 are uniformly arranged at intervals along the circumferential direction of the base body 21; the chamber body 1, the base body 21, and the cantilever 22 are integrally formed, and are made of a material having electrical and thermal conductivity.

As shown in fig. 1 and 3, the chamber body 1 may be a cubic structure made of metal, and a hollow reaction chamber 11 is formed in the middle of the chamber body 1 for accommodating the susceptor 2 and the chuck assembly 3. In practical applications, the top of the chamber body 1 may be provided with a cover (not shown), and the pumping port 12 at the bottom may be connected to an exhaust assembly (not shown) of the semiconductor processing equipment, so as to make the reaction chamber 11 in a vacuum state, thereby providing a reaction environment for the workpiece to be processed, which is specifically a wafer, but the embodiment of the present invention is not limited thereto. The susceptor 2 and the chamber body 1 are integrally formed, that is, the susceptor 2 and the chamber body 1 are made of the same material, and are made of a material having electrical and thermal conductivity, for example, a metal material. Specifically, the base body 21 is a cylindrical structure, three cantilevers 22 are disposed on the periphery of the base body 21, the three cantilevers 22, the base body 21 and the chamber body 1 are integrally formed, that is, two ends of each cantilever 22 are respectively connected to the inner wall of the reaction chamber 11 and the outer wall of the base body 21, and the three cantilevers 22 are circumferentially spaced and uniformly distributed along the base body 21. The chuck assembly 3 may have a disc-shaped structure as a whole, and the chuck assembly 3 is disposed on the top of the base body 21 to support and adsorb a workpiece to be processed.

In the embodiment of the application, the cavity body, the base body and the cantilever adopt an integrated structure made of the same material, so that no gap exists between the cantilever and the cavity body, the electric conductivity between the cantilever and the cavity body is better, and the uniformity of a radio frequency loop of the process cavity is greatly improved; in addition, the heat conduction performance from the cavity body to the cantilever is improved, so that the integral temperature uniformity of the process cavity is greatly improved, and the yield of the workpiece to be processed is greatly improved. Furthermore, because the cavity body and the base adopt an integrated structure, the structural stability of the embodiment of the application can be improved, and the application and maintenance cost can be greatly reduced.

It should be noted that the embodiments of the present application are not limited to the specific implementation of the cantilever 22 and the chamber body 1, for example, two or more cantilevers 22 may be used, and the chamber body 1 may also have a cylindrical structure. Therefore, the embodiments of the present application are not limited thereto, and those skilled in the art can adjust the settings according to actual situations.

In an embodiment of the present application, as shown in fig. 1, an open receiving cavity 211 is formed in the base body 21, a mounting channel 221 communicated with the receiving cavity 211 is formed in the plurality of cantilevers 22, and a through hole 13 communicated with the mounting channel 221 is formed on the chamber body 1; the chuck assembly 3 includes an interface disk 32, and the interface disk 32 is hermetically disposed on the opening of the accommodating cavity 211.

As shown in fig. 1, the base body 21 is a cylindrical structure, so that a receiving cavity 211 is formed in the base body 21. Each cantilever 22 is, for example, a rectangular rod-shaped structure, the cantilever 22 is a hollow structure to form a mounting channel 221, and the chamber body 1 is provided with a through hole 13 corresponding to the mounting channel 221 in each cantilever 22. The through hole 13 may be a rectangular structure, and the size of the cross section of the through hole 13 is the same as the size of the mounting channel 221 in the cantilever 22. The installation channel 221 may be used to install parts (not shown) such as cables, air pipes, and water pipes connected to the inside and outside of the chamber body 1, and may also be installed with some parts having a suitable size, so as to greatly save the space outside the chamber body 1 and the space occupied by the chamber body 1. The interface disc 32 of the chuck assembly 3 may specifically adopt a disc-shaped structure made of a metal material, and the interface disc 32 may cover the top of the base body 21 to seal the opening of the accommodating cavity 211. The interface disc 32 is detachably connected with the base body 21, so that the dismounting and maintenance efficiency of the embodiment of the application is improved. In addition, since the base body 21 and the cantilever 22 both adopt a hollow structure, the manufacturing cost of the embodiment of the present application can be greatly saved.

It should be noted that the embodiment of the present application is not limited to the specific shape of the cantilever 22, and for example, the cantilever 22 may also be a round rod-shaped structure. Therefore, the embodiments of the present application are not limited thereto, and those skilled in the art can adjust the settings according to actual situations.

In an embodiment of the present application, as shown in fig. 1 to 4, an opening 222 communicating with the installation channel 221 and the accommodation cavity 211 is formed on the top surface of the cantilever 22; the interface disc 32 includes a disc main body 321 and a plurality of cover plates 322 disposed on the outer edge of the disc main body 321, the cover plates 322 are circumferentially spaced and uniformly disposed along the disc main body 321, the disc main body 321 is hermetically disposed above the accommodating cavity 211, and the cover plates 322 are hermetically disposed above the mounting channels 221 in a one-to-one correspondence manner.

As shown in fig. 1 to 4, an opening 222 is disposed on the top surface of the cantilever 22, and the opening 222 is communicated with the receiving cavity 211 of the base body 21 and the installation channel 221 in the cantilever 22. The interface disk 32 includes a disk main body 321 and a plurality of cover plates 322 formed integrally, and the plurality of cover plates 322 are provided corresponding to the plurality of suspension arms 22, respectively. The tray main body 321 covers the accommodating chamber 211 to seal the accommodating chamber 211. When the interface disc 32 is assembled to the base body 21, the three cover plates 322 can be correspondingly covered on the three suspension arms 22 to seal the mounting passages 221 of the three suspension arms 22 in a one-to-one correspondence. The cover plate 322 may cover the opening 222 to protect the components mounted in the cantilever 22, so as to prevent the corrosion of the process chamber to the components during the process, thereby greatly reducing the failure rate and prolonging the service life. In practical use, the opening 222 is provided, so that the parts mounted in the base body 21 and the cantilever 22 can be maintained by disassembling the interface disc 32, thereby greatly improving the disassembly and assembly maintenance efficiency of the embodiment of the present application.

It should be noted that the embodiment of the present application does not limit the specific number of the cover plates 322, as long as the number of the cover plates 322 corresponds to the number of the cantilevers 22. Therefore, the embodiments of the present application are not limited thereto, and those skilled in the art can adjust the settings according to actual situations.

In one embodiment of the present application, as shown in fig. 1 to 4, the chuck assembly 3 includes an electrostatic chuck 31, and the electrostatic chuck 31 is disposed on the disk main body 321 for carrying a workpiece to be processed.

As shown in fig. 1 to 4, the electrostatic chuck 31 may specifically adopt a disc-shaped structure made of a ceramic material, a top surface of the electrostatic chuck 31 may be used for bearing a workpiece to be processed, and a bottom surface of the electrostatic chuck 31 is attached to the disk main body 321. The disk main body 321 may cover the top of the base body 21, and the disk main body 321 may be used to mount the electrostatic chuck 31 and provide an interface for an electrode and a backside gas of the electrostatic chuck 31. The diameter of the disk main body 321 may be larger than the diameter of the electrostatic chuck 31 so as to be connected to the electrostatic chuck 31 and the base body 21, and the connection mode may be detachably connected, thereby improving the dismounting and maintenance efficiency of the embodiment of the present application. However, it should be noted that the embodiment of the present application does not limit the specific type of the chuck assembly 3, and the setting can be adjusted by those skilled in the art according to the actual situation.

In one embodiment of the present application, as shown in fig. 1 to 3, a positioning structure 4 is disposed between the cover plate 322 and the suspension arm 22 for defining the position of the interface disc 32. Optionally, the positioning structure 4 includes a positioning hole (not shown) disposed on the bottom surface of the cover plate 322, and a positioning post 41 disposed on the top surface of the cantilever 22, wherein the positioning hole is matched with the positioning post 41 for positioning.

As shown in fig. 1 to fig. 3, a positioning hole (not shown) may be disposed on a bottom surface of the cover plate 322, and a positioning post 41 is protruded on a top surface of the cantilever 22, wherein the positioning hole and the positioning post 41 together form the positioning structure 4. The positioning structures 4 may be two, and are respectively located between the two suspension arms 22 and the two cover plates 322, and the positioning structures 4 are used for positioning and installing the interface disc 32 at the correct position. However, the embodiment of the present application is not limited thereto, for example, the positioning structure 4 may also adopt a manner of matching a protrusion with a groove, and a person skilled in the art may adjust the setting according to actual situations. Further, the outer fringe of three apron 322 can adopt cambered surface structure to cambered surface structure diameter is less than about 2mm (millimeter) of reaction chamber 11 internal diameter, with take place mechanical interference between the inner wall of reaction chamber 11 when avoiding installing interface disc 32, thereby improves the dismouting maintenance efficiency that this application was implemented by a wide margin, and can also effectively reduce the fault rate of this application embodiment. In addition, in order to facilitate the installation and sealing between the interface disc 32 and the base body 21, the top surface of the cantilever 22 close to the sidewall of the reaction chamber 11 is of a closed structure, that is, a preset distance is provided between the side of the opening 222 away from the accommodating cavity 211 and the sidewall of the reaction chamber 11, the preset distance may be 30mm, and the wall thickness of the cantilever 22 may be set to be about 20 mm. Positioning posts 41 may be disposed near the side walls of the reaction chamber 11 for positioning the interface disk 32. However, the embodiments of the present application are not limited to the above, and those skilled in the art can adjust the settings according to the actual situation.

In an embodiment of the present application, as shown in fig. 1 to 4, the base 2 further includes a bottom cover 34, the bottom cover 34 is disposed at the bottom of the base body 21, and a top wall of the bottom cover 34 and an inner wall of the base body 21 enclose an accommodating cavity 211; the side of the chamber body 1 is opened with a maintenance port 14 corresponding to the bottom cover 34, and the maintenance port 14 is communicated with the reaction chamber 11 for maintaining the bottom cover 34.

As shown in fig. 1 to 4, the bottom cover 34 is made of a metal material and has a shell-shaped structure, a top edge of the bottom cover 34 is connected to the bottom surface of the base body 21, and a top wall of the bottom cover 34 and an inner wall of the base body 21 enclose an accommodating cavity 211. The bottom cover 34 is used for closing the accommodating cavity 211, and various components, such as a lifting assembly (not shown in the figure), can be installed in the accommodating cavity 211, and the lifting assembly can penetrate through the interface disc 32 and the electrostatic chuck 31 to be used for driving the workpiece to be processed to lift and lower relative to the chuck assembly 3, and the components in the accommodating cavity 211 can be conveniently maintained by disassembling the bottom cover 34. Specifically, the bottom cover 34 and the base body 21 may be connected by a flange and a bolt, but the embodiment of the present application is not limited thereto, for example, the bottom cover 34 and the base body 21 may be connected by a screw or a snap. The bottom cover 34 and the base body 21 are detachable, so that the lifting assembly can be maintained conveniently, and the disassembly and assembly maintenance efficiency is greatly improved. It should be noted that, in the embodiments of the present application, not all embodiments necessarily include the bottom cover 34, for example, the bottom cover 34 and the base body 21 may be integrally formed, and the base body 21 is provided with a maintenance door structure for maintaining each component. Therefore, the embodiment of the present application is not limited thereto, and those skilled in the art can adjust the height setting according to the actual situation. The side of the chamber body 1 may be opened with a rectangular maintenance port 14, the length of the maintenance port 14 is greater than the diameter of the bottom cover 34, and the height of the maintenance port 14 is greater than the thickness of the bottom cover 34, so as to facilitate the disassembly and assembly maintenance of the bottom cover 34, thereby greatly improving the disassembly and assembly maintenance efficiency of the embodiment of the present application. In the embodiments of the present application, the specific position and shape of the maintenance opening 14 are not limited, and the maintenance opening 14 may be located at a position corresponding to the position of the bottom cover 34. Therefore, the embodiments of the present application are not limited thereto, and those skilled in the art can adjust the settings according to actual situations.

In an embodiment of the present application, as shown in fig. 3, the outer diameter of the bottom cover 34 is gradually decreased in a direction away from the base body 21. Specifically, the bottom cover 34 may be a tapered circular truncated cone structure with a large top and a small bottom, that is, the outer diameter of the bottom cover 34 gradually decreases from the top surface to the bottom surface. By adopting the design, the bottom cover 34 adopts the conical round platform design, so that the gas in the chamber body 1 can flow towards the pumping hole 12, the stability of the gas flow in the reaction chamber 11 is reduced, and the yield of the workpieces to be processed is improved.

In an embodiment of the present application, as shown in fig. 1, the susceptor 2 and the chamber body 1 are made of an aluminum alloy material. Particularly, chamber body 1, base body 21 and cantilever 22 all can adopt the aluminum alloy material to make, and owing to adopt integrative structure to make electric conductive property between the three good to owing to there is almost no difference between a plurality of cantilevers 22, the equivalent current accessible of radio frequency return circuit is circumferentially equipartition ground by three cantilever 22 flow direction chamber body 1 and ground connection, thereby has improved the homogeneity of radio frequency return circuit. The plurality of cantilevers 22 can be specifically three, three cantilevers 22 are evenly arranged on the periphery of the base body 21, and an included angle between two adjacent cantilevers 22 is 120 degrees, because the heat conduction between the chamber body 1, the base body 21 and the cantilevers 22 is excellent, the chamber body 1 is conducted to the base body 21 through the three cantilevers 22 which are evenly distributed, the temperature difference between the chamber body 1 and the base body 21 can be reduced, and the temperature uniformity at the position of the base body 21 can be improved. In addition, the upper width of the plurality of cantilevers 22 in the cross section of the chamber body 1 may be 100 mm to 200mm, but the embodiment of the present invention is not limited thereto, and the width of the cantilevers 22 may be specifically set according to the number of cantilevers 22 and the influence on the airflow state in the reaction chamber 11. Therefore, the specific specification of the cantilever 22 is not limited in the embodiment of the present application, and the setting can be adjusted by a person skilled in the art according to the actual situation.

Based on the same inventive concept, embodiments of the present application provide a semiconductor processing apparatus, which includes a radio frequency assembly and an exhaust assembly, and further includes a process chamber as provided in the above embodiments, wherein the radio frequency assembly is disposed at the top of the chamber body, and the exhaust assembly is disposed at the bottom of the chamber body.

By applying the embodiment of the application, at least the following beneficial effects can be realized:

in the embodiment of the application, the cavity body, the base body and the cantilever adopt an integrated structure made of the same material, so that no gap exists between the cantilever and the cavity body, the electric conductivity between the cantilever and the cavity body is better, and the uniformity of a radio frequency loop of the process cavity is greatly improved; in addition, the heat conduction performance from the cavity body to the cantilever is improved, so that the integral temperature uniformity of the process cavity is greatly improved, and the yield of the workpiece to be processed is greatly improved. Furthermore, because the cavity body and the base adopt an integrated structure, the structural stability of the embodiment of the application can be improved, and the application and maintenance cost can be greatly reduced.

It will be understood that the above embodiments are merely exemplary embodiments taken to illustrate the principles of the present invention, which is not limited thereto. It will be apparent to those skilled in the art that various modifications and improvements can be made without departing from the spirit and substance of the invention, and these modifications and improvements are also considered to be within the scope of the invention.

In the description of the present application, it is to be understood that the terms "center", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", and the like indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience in describing the present invention and simplifying the description, but do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed in a particular orientation, and be operated, and thus, should not be construed as limiting the present invention.

The terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present invention, "a plurality" means two or more unless otherwise specified.

In the description of the present application, it is to be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.

In the description herein, particular features, structures, materials, or characteristics may be combined in any suitable manner in any one or more embodiments or examples.

The foregoing is only a partial embodiment of the present application, and it should be noted that, for those skilled in the art, several modifications and decorations can be made without departing from the principle of the present application, and these modifications and decorations should also be regarded as the protection scope of the present application.