阅读说明：本技术 一种微波功率传感器阵列 (Microwave power sensor array ) 是由 马中发 齐晓智 孙占赢 汤红花 于 2019-08-21 设计创作，主要内容包括：本发明属于微电子机械系统的技术领域,提出了一种大功率的微波场合的微波功率传感器阵列,具体涉及一种微波功率传感器阵列,主要由微波传感器组、信号电缆和处理器构成,微波传感器组包括M×N个微波传感器,每个微波传感器的电缆合成一束后构成信号电缆,信号电缆接入处理器,处理器对接收的每个微波传感器的电信号进行处理和转换,利用微波热效应与微波吸收材料温度变化的具有的正相关关系,通过对温度参数的测定从而确定一定空间范围内的微波平均功率和功率分布。(The invention belongs to the technical field of micro-electromechanical systems, and provides a microwave power sensor array in a high-power microwave occasion, in particular to a microwave power sensor array which mainly comprises a microwave sensor group, a signal cable and a processor, wherein the microwave sensor group comprises M multiplied by N microwave sensors, the cable of each microwave sensor is synthesized into a beam to form the signal cable, the signal cable is connected into the processor, the processor processes and converts the received electric signal of each microwave sensor, and the average power and the power distribution of microwaves in a certain space range are determined by utilizing the positive correlation relation between the microwave thermal effect and the temperature change of a microwave absorbing material and measuring temperature parameters.)

1. A microwave power sensor array, characterized by: the microwave sensor group comprises M multiplied by N microwave sensors, each microwave sensor cable is formed by synthesizing one beam of the microwave sensor cable, the signal cable is connected into the processor, the processor processes and converts received electric signals of the microwave sensors, and the microwave average power and power distribution in a certain space range are determined by utilizing the positive correlation relation between the microwave thermal effect and the temperature change of the microwave absorbing material and measuring the temperature parameter.

2. A microwave power sensor array in accordance with claim 1, wherein: the microwave sensor is composed of four structures, namely a heat insulation wave-transmitting layer, a microwave energy absorption layer, a temperature balance layer and a temperature sensor, which are sequentially arranged from outside to inside.

3. A microwave power sensor array in accordance with claim 2, wherein: the heat insulation wave-transmitting layer, the microwave energy absorption layer and the temperature balance layer are all tightly connected, and a probe of the temperature sensor is fixed at the central position of the temperature balance layer.

4. A microwave power sensor array in accordance with claim 1, wherein: the adjacent sides between the microwave sensors are bonded by using an inorganic adhesive which does not absorb microwaves, so that the situation that the microwaves within the range of the microwave sensor group are reflected by a non-microwave energy absorption layer or absorbed by the non-microwave energy absorption layer to cause inaccurate measurement results is prevented.

Technical Field

The invention belongs to the technical field of micro-electromechanical systems, and provides a microwave power sensor array in a high-power microwave occasion.

Background

In the development of microwave technology, microwave power is one of three important parameters of a microwave system. Microwave power detection is essential in any microwave study. Microwave power measurement is of great significance in microwave energy applications. The traditional microwave power occasions generally adopt an electric field measurement method, namely, a microwave electric field is coupled into a measurement circuit through an antenna and then is converted into current or voltage for measurement through the microwave circuit.

Disclosure of Invention

To the not enough that prior art exists, this patent proposes one kind and utilizes the heat effect of microwave, converts microwave power into temperature parameter, measures the size of temperature parameter and confirms microwave power.

The technical scheme of the invention is as follows: a microwave power sensor array is composed of a microwave sensor group consisting of M x N microwave sensors, a signal cable consisting of a bundle of cables connected to processor circuit, and a processor for measuring and converting the electric signals of each microwave sensor.

The microwave sensor consists of four structures, namely a heat insulation wave-transmitting layer, a microwave energy absorbing layer, a temperature balancing layer and a temperature sensor, which are sequentially arranged from outside to inside, wherein the heat insulation wave-transmitting layer, the microwave energy absorbing layer and the temperature balancing layer are tightly connected, and a probe of the temperature sensor is fixed at the central position of the temperature balancing layer.

Furthermore, the heat insulation wave-transparent layer is used for isolating heat conduction between adjacent microwave sensors, and materials which do not absorb microwaves and can transmit the microwaves are selected, and comprise polytetrafluoroethylene, asbestos, glass fibers and the like.

Further, the microwave energy absorbing layer absorbs microwave energy and can convert the absorbed microwave energy into heat energy completely, and silicon carbide, graphite and other materials can be selected.

Further, the temperature balancing layer is uniformly raised according to the amount of heat energy of the microwave energy absorbing layer, the temperature sensor 44 can measure the amount and the change process of the temperature, and deionized water can be used as a filler of the temperature balancing layer.

Furthermore, the temperature sensor measures the temperature in the temperature balance layer, converts the temperature into an electric signal and transmits the electric signal to the processor circuit through a signal cable, and the optical line temperature sensor, the water temperature sensor and the thermistor sensor can be selected.

Optimally, the side surfaces of the adjacent microwave sensors are bonded by using an inorganic adhesive which does not absorb microwaves, so that the situation that the microwaves within the range of the microwave sensor group are reflected by the non-microwave energy absorption layer or absorb the microwaves to cause inaccurate measurement results is prevented.

The processor supplies power to each microwave sensor and receives the electric signals of the temperature sensors, so that the microwave radiation power received by each microwave sensor is calculated in a reverse-deducing mode, and the microwave power spatial distribution and the average power are further calculated.

Furthermore, the processor comprises a temperature sensor signal processing circuit, a single chip microcomputer and a display device, wherein the temperature sensor signal processing circuit is connected with the single chip microcomputer, the single chip microcomputer is connected with the display device, the temperature sensor signal processing circuit receives a temperature parameter signal of the temperature sensor and converts the temperature parameter signal into a parameter which can be read by the single chip microcomputer, the single chip microcomputer performs conversion operation according to the read signal parameter, and the measured temperature signal parameter is used for determining the spatial distribution condition of the microwave radiation power required to be measured and the microwave average power within a certain range.

The invention utilizes the positive correlation relationship between the microwave thermal effect and the temperature change of the microwave absorbing material, determines the average microwave power and the power distribution in a certain space range by measuring the temperature parameter, has wider application range compared with the traditional microwave field power measurement method, and is particularly suitable for scenes with overlarge microwave power.

Drawings

Fig. 1 is a schematic structural diagram of a microwave power sensor array according to the present invention;

fig. 2 is a schematic diagram of a sensor cross-sectional structure of a microwave power sensor array according to the present invention.

In the figure: the microwave temperature sensor comprises a microwave sensor group 1, a signal cable 2, a processor 3, a microwave sensor 4, a heat insulation wave-transmitting layer 41, a microwave energy absorbing layer 42, a temperature balancing layer 43 and a temperature sensor 44.

Detailed Description

The present invention will be described in detail below with reference to the accompanying drawings and specific embodiments.

In the present invention, the upper, lower, left and right in the drawings are regarded as the upper, lower, left and right of the reaction tower chamber described in the present specification.

The exemplary embodiments of the present invention will now be described with reference to the accompanying drawings, however, the present invention may be embodied in many different forms and is not limited to the embodiments described herein, which are provided for complete and complete disclosure of the present invention and to fully convey the scope of the present invention to those skilled in the art. The terminology used in the exemplary embodiments illustrated in the accompanying drawings is not intended to be limiting of the invention. In the drawings, the same units/elements are denoted by the same reference numerals.

Unless otherwise defined, terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. Further, it will be understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the relevant art and will not be interpreted in an idealized or overly formal sense.

As shown in fig. 1, a microwave power sensor array is composed of a microwave sensor 4 group 11, a signal cable 22 and a processor 3433, wherein the microwave sensor 4 group 11 includes M × N microwave sensors 44, the cables of each microwave sensor 44 are combined into a bundle to form the signal cable 22, the signal cable 22 is connected to a circuit of the processor 3433, and the processor 3433 measures and converts the electric signal of each microwave sensor 44, thereby measuring the average power and power distribution of microwaves in a certain spatial range.

The microwave sensor 44 is composed of four structures of a heat insulation wave-transmitting layer 41, a microwave energy absorbing layer 42, a temperature balancing layer 43 and a temperature sensor 44 which are sequentially arranged from outside to inside, wherein the heat insulation wave-transmitting layer 41, the microwave energy absorbing layer 42 and the temperature balancing layer 43 are all tightly connected, and a probe of the temperature sensor 44 is fixed at the central position of the temperature balancing layer 43.

The heat insulation wave-transmitting layer 41 is used for isolating heat conduction between adjacent microwave sensors 4, is made of a material which does not absorb microwaves and can transmit the microwaves, and is made of asbestos fibers with the thickness of 2mm into a square with a certain size; the microwave energy absorbing layer 42 absorbs microwave energy and can convert the absorbed microwave energy into heat energy, and silicon carbide with the thickness of 5mm is selected to be tightly installed with the heat insulation wave-transmitting layer 41.

The temperature balancing layer 43 is a filler that can measure the temperature and the variation process of the temperature using the temperature sensor 44 according to the temperature rise of the microwave energy absorbing layer 42.

The temperature sensor 44 measures the temperature in the temperature balancing layer 43, converts the temperature into an electrical signal, and transmits the electrical signal to the processor 343 circuit through the signal cable 2, and is a thermistor sensor.

In addition, the side surfaces of the adjacent microwave sensors 44 are bonded by using an inorganic adhesive which does not absorb microwaves, so that the microwaves within the range of the microwave sensor 4 group 1 are prevented from being reflected by the non-microwave energy absorption layer 42 or absorbing the microwaves, and the measurement result is prevented from being inaccurate.

The processor 3433 supplies power to each microwave sensor 44 and receives the electrical signals from the temperature sensors 44 to inversely calculate the microwave radiation power received by each microwave sensor 44 to further calculate the spatial distribution and average power of the microwave power. The processor 3433 includes a temperature sensor 44 signal processing circuit, a single chip microcomputer and a display device, the temperature sensor 44 signal processing circuit is connected to the single chip microcomputer, the single chip microcomputer is connected to the display device, the temperature sensor 44 signal processing circuit receives the temperature parameter signal of the temperature sensor 44 and converts the temperature parameter signal into a parameter which can be read by the single chip microcomputer, the single chip microcomputer performs conversion operation according to the read signal parameter, and the measured temperature signal parameter is used for determining the spatial distribution condition of the microwave radiation power and the microwave average power within a certain range.

The above description is only for the preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art should be able to cover the technical scope of the present invention and the equivalent alternatives or modifications according to the technical solution and the inventive concept of the present invention within the technical scope of the present invention.