阅读说明：本技术 具有高隔离度和低剖面的毫米波双频双极化共口径天线 (Millimeter wave dual-frequency dual-polarization common-aperture antenna with high isolation and low profile ) 是由 郝张成 郭子均 于 2020-12-02 设计创作，主要内容包括：本发明公开一种具有高隔离度和低剖面的毫米波双频双极化共口径天线,依次包括基片集成波导馈电网络、层间缝隙、基片集成同轴线馈电网络和辐射结构层；低频段电磁波经过基片集成同轴线馈电网络,将能量耦合至蝴蝶结形横向缝隙,再由蝴蝶结形横向缝隙辐射水平极化波；高频段电磁波经过基片集成波导馈电网络,通过层间缝隙差分激励纵向缝隙对,从而辐射垂直极化波；本发明的结构使得天线不仅在两个频段内具有较宽的带宽和较高的隔离度,还具有较低的剖面高度和易于与平面电路集成的优点。(The invention discloses a millimeter wave dual-frequency dual-polarization common-aperture antenna with high isolation and low profile, which sequentially comprises a substrate integrated waveguide feed network, an interlayer gap, a substrate integrated coaxial feed network and a radiation structure layer; the low-frequency-band electromagnetic waves pass through the substrate integrated coaxial line feed network, couple energy to the bowtie-shaped transverse gap, and then radiate horizontal polarized waves through the bowtie-shaped transverse gap; high-frequency-band electromagnetic waves pass through the substrate integrated waveguide feed network, and the longitudinal slot pairs are excited through the interlayer slot difference, so that vertical polarized waves are radiated; the structure of the invention ensures that the antenna not only has wider bandwidth and higher isolation in two frequency bands, but also has the advantages of lower section height and easy integration with a planar circuit.)

1. A millimeter wave dual-frequency dual-polarization common-aperture antenna with high isolation and low profile is characterized in that the antenna sequentially comprises a substrate integrated waveguide feed network (6), an interlayer gap (7), a substrate integrated coaxial feed network (5) and a radiation structure layer (18); a first dielectric substrate (1) is arranged between the radiation gap layer (18) and the substrate integrated coaxial line feed network (5), a second dielectric substrate (3) is arranged between the substrate integrated coaxial line feed network (5) and the interlayer gap (7), and the substrate integrated waveguide feed network (6) is integrated in a third dielectric substrate (4); one side of the substrate integrated coaxial line feed network (5) is provided with a grounding coplanar waveguide-to-substrate integrated coaxial line structure (12), and a bending line (13) is arranged in the substrate integrated coaxial line feed network (5); a plurality of rows of bowtie-shaped transverse slits (10) and longitudinal slit pairs (9) are respectively arranged on the radiation structure layer (18), and the bowtie-shaped transverse slits (10) and the longitudinal slit pairs (9) in each row are alternately arranged; the longitudinal slot pair (9) is surrounded by the substrate integrated waveguide shielding cavity (8) formed by four rows of metallized hole arrays (19); the bowknot-shaped transverse gap (10) is positioned in the centers of the two rows of the metallized hole arrays (19); the bowtie-shaped transverse slot (10) and the longitudinal slot pair (9) share the substrate integrated waveguide shielding cavity (8) consisting of the metalized hole array (19); one side of the substrate integrated coaxial line feed network (5) is provided with a grounding coplanar waveguide-to-substrate integrated coaxial line structure (12), and a bending line (13) is arranged in the substrate integrated coaxial line feed network (5); a microstrip line-to-substrate integrated waveguide structure (17) is arranged on one side of the substrate integrated waveguide feed network (6), and a metalized matching hole (16) is arranged in the substrate integrated waveguide feed network (6); each interlayer gap (7) is surrounded by the substrate integrated waveguide shielding cavity (8) formed by the metalized hole array (19) and is positioned below the longitudinal gap pair (9); the longitudinal slot pair (9) and the bowtie-shaped transverse slot (10) are positioned on the upper surface of the first dielectric substrate (1), the substrate integrated coaxial line feed network (5) is positioned on the upper surface of the second dielectric substrate (3), the grounding coplanar waveguide to substrate integrated coaxial line structure (12) is positioned on the upper surface of the second dielectric substrate (3), the interlayer slot (7) is positioned on the lower surface of the second dielectric substrate (3) and the upper surface of the third dielectric substrate (4), the substrate integrated waveguide feed network (6) is positioned in the third dielectric substrate (4), and the microstrip line to substrate integrated waveguide structure (17) is positioned on the lower surface of the third dielectric substrate (4); the low-frequency electromagnetic wave couples energy to the bowtie-shaped transverse gap (10) through the grounded coplanar waveguide-to-substrate integrated coaxial line structure (12) and the substrate integrated coaxial line feed network (5), and then horizontally polarized waves are radiated by the bowtie-shaped transverse gap (10); high-frequency-band electromagnetic waves pass through the microstrip line-to-substrate integrated waveguide structure (17) and the substrate integrated waveguide feed network (6), and differentially excite the longitudinal slot pairs (9) through the interlayer slots (7), so that vertical polarized waves are radiated.

2. The millimeter wave dual-frequency dual-polarization common-aperture antenna with high isolation and low profile according to claim 1, wherein the substrate integrated coaxial feed network (5) is in parallel-series feed mode, that is, low-frequency band electromagnetic waves are divided into sixteen signals in parallel and equally, and then four bowtie-shaped transverse slots (10) are fed in series.

3. The millimeter wave dual-frequency dual-polarization co-aperture antenna with high isolation and low profile according to claim 1, wherein the grounded coplanar waveguide to substrate integrated coaxial line structure (12) is a planar transition structure.

4. A millimeter wave dual-frequency dual-polarization common aperture antenna with high isolation and low profile according to claim 1, wherein the pair of longitudinal slots (9) is symmetrical with respect to the inter-layer slots (7) and offset by a certain distance from the inter-layer slots (7).

5. The millimeter wave dual-frequency dual-polarization co-aperture antenna with high isolation and low profile according to claim 1, wherein the substrate integrated coaxial feed network (5) is located above the substrate integrated waveguide feed network (6), and the substrate integrated coaxial feed network (5) is located between adjacent substrate integrated waveguide shielded cavities (8).

6. The millimeter wave dual-frequency dual-polarization common-aperture antenna with high isolation and low profile according to claim 1, wherein the bowtie-shaped transverse slot (10) is located above the substrate-integrated coaxial feed network (5) and is kept at an offset distance from the substrate-integrated coaxial feed network (5).

7. The millimeter wave dual-frequency dual-polarization common-aperture antenna with high isolation and low profile according to claim 1, wherein the meander line is adopted between adjacent array elements in the bow-tie shaped transverse slot (10) antenna array to ensure in-phase radiation of the bow-tie shaped transverse slot array.

8. The millimeter wave dual-frequency dual-polarization co-aperture antenna with high isolation and low profile according to claim 1, wherein the substrate integrated waveguide shielding cavity (8) is square, and the metallized hole array (19) penetrates from the radiation structure layer to the interlayer gap (7) through the first dielectric substrate (1), the adhesive layer (2) and the second dielectric substrate (3).

9. The millimeter wave dual-frequency dual-polarization common-aperture antenna with high isolation and low profile according to claim 1, wherein the first dielectric substrate (1) and the second dielectric substrate (3) are both Taconic TLY-5 and have a thickness of 0.51 mm; the third dielectric substrate (4) is Rogers RO4003C, the thickness is 0.508mm, the distance between adjacent through holes is 0.6mm, and the diameter of each through hole is 0.4 mm.

Technical Field

The invention belongs to the technical field of antennas, and particularly relates to a millimeter wave dual-frequency dual-polarization common-aperture antenna with high isolation and a low profile.

Background

At present, satellite communication frequency bands are mainly concentrated on C and Ku wave bands, along with the development of satellite communication, the frequency spectrum of a microwave frequency band is increasingly tense, and the frequency coordination difficulty is high, so that people are forced to search and develop a millimeter wave frequency band to meet new satellite communication requirements. Moreover, the existing satellite communication system is difficult to meet the transmission requirement of broadband contents such as multimedia in the current society, so the development direction of the millimeter wave broadband becomes an inevitable trend. Currently, domestic and foreign satellites are divided into communication, navigation, remote sensing, reconnaissance and the like according to functions. Compared with the antenna with single function, the multi-frequency multifunctional antenna can independently work in a plurality of frequency bands, not only realizes the requirement of multifunctional integration, but also reduces the volume and the cost of the system. Therefore, as the most important component in the satellite communication system, the development of a low-cost millimeter wave multi-frequency broadband common-aperture antenna has become an urgent need.

With the development of the satellite antenna towards millimeter wave, broadband, multifunctional integration and low cost, some challenges are also inevitable, and 1. dual-frequency common-caliber antennas operating in the low frequency band often have good isolation (generally lower than-20 dB). As the frequency band shifts to millimeter waves, mutual coupling between units, surface waves, and the use of a conventional microstrip feed network may cause poor isolation, thereby deteriorating the radiation performance of the antenna. 2. Due to the complexity of the feed network, the common-aperture antenna often has a very high profile, which causes a surface wave effect in the millimeter wave frequency band. In addition, the existing millimeter wave dual-frequency common-aperture antenna is difficult to realize broadband characteristics in two frequency bands. Therefore, the development of the broadband dual-band dual-polarization common-aperture antenna with high isolation and low profile has great significance.

Disclosure of Invention

The technical problem is as follows: in view of the above-mentioned drawbacks of the prior art, an object of the present invention is to provide a millimeter wave dual-band dual-polarized common-aperture antenna to achieve high isolation and low profile characteristics while achieving broadband characteristics in two frequency bands.

The technical scheme is as follows: in order to achieve the purpose, the invention discloses a millimeter wave dual-frequency dual-polarization common-aperture antenna with high isolation and low profile, which sequentially comprises a substrate integrated waveguide feed network, an interlayer gap, a substrate integrated coaxial line feed network and a radiation structure layer; a first dielectric substrate is arranged between the radiation gap layer and the substrate integrated coaxial line feed network, a second dielectric substrate is arranged between the substrate integrated coaxial line feed network and the interlayer gap, and the substrate integrated waveguide feed network is integrated in a third dielectric substrate; one side of the substrate integrated coaxial line feed network is provided with a grounding coplanar waveguide-to-substrate integrated coaxial line structure, and a bending line is arranged in the substrate integrated coaxial line feed network; the radiation structure layer is respectively provided with a plurality of rows of bowtie-shaped transverse slits and longitudinal slit pairs, and each row of bowtie-shaped transverse slits and each row of longitudinal slit pairs are alternately arranged; the longitudinal slot is surrounded by the substrate integrated waveguide shielding cavity formed by the four rows of metallized hole arrays; the bowknot-shaped transverse gap is positioned in the centers of the two rows of metallized hole arrays; the substrate integrated waveguide shielding cavity formed by the metallized hole array is shared by the bowtie-shaped transverse gap and the longitudinal gap pair; one side of the substrate integrated coaxial line feed network is provided with a grounding coplanar waveguide-to-substrate integrated coaxial line structure, and a bending line is arranged in the substrate integrated coaxial line feed network; a microstrip line-to-substrate integrated waveguide structure is arranged on one side of the substrate integrated waveguide feed network, and a metalized matching hole is arranged in the substrate integrated waveguide feed network; each interlayer gap is surrounded by the substrate integrated waveguide shielding cavity formed by the metalized hole array and is positioned below the longitudinal gap pair; the longitudinal slot pair and the bowtie-shaped transverse slot are positioned on the upper surface of the first dielectric substrate, the substrate integrated coaxial line feed network is positioned on the upper surface of the second dielectric substrate, the grounding coplanar waveguide to substrate integrated coaxial line structure is positioned on the upper surface of the second dielectric substrate, the interlayer slot is positioned on the lower surface of the second dielectric substrate and the upper surface of the third dielectric substrate, the substrate integrated waveguide feed network is positioned in the third dielectric substrate, and the microstrip line to substrate integrated waveguide structure is positioned on the lower surface of the third dielectric substrate; the low-frequency-band electromagnetic wave is coupled with energy to the bowtie-shaped transverse gap through the grounded coplanar waveguide-to-substrate integrated coaxial line structure and the substrate integrated coaxial line feed network, and then horizontally polarized waves are radiated by the bowtie-shaped transverse gap; the high-frequency-band electromagnetic waves pass through the microstrip line-to-substrate integrated waveguide structure and the substrate integrated waveguide feed network, and the longitudinal slot pairs are excited through the interlayer slot difference, so that vertical polarized waves are radiated.

The substrate integrated coaxial line feed network is in a parallel-series feed mode, namely low-frequency electromagnetic waves are firstly divided into sixteen paths of signals in parallel and equally, and then four bowknot-shaped transverse gaps are subjected to serial feed.

The structure of the grounding coplanar waveguide to substrate integrated coaxial line is a planar switching structure.

The longitudinal gap pairs are symmetrical relative to the interlayer gaps and offset from the interlayer gaps by a certain distance;

the substrate integrated coaxial line feed network is positioned above the substrate integrated waveguide feed network, and the substrate integrated coaxial line feed network is positioned between adjacent substrate integrated waveguide shielding cavities.

The bowtie-shaped transverse gap is positioned above the substrate integrated coaxial line feed network and keeps a certain offset distance with the substrate integrated coaxial line feed network.

The bending lines are adopted between adjacent array elements in the bowtie-shaped transverse slot antenna array to ensure the in-phase radiation of the bowtie-shaped transverse slot array.

The substrate integrated waveguide shielding cavity is square, and the metallized hole array penetrates from the radiation structure layer to the interlayer gap through the first dielectric substrate, the bonding layer and the second dielectric substrate.

The first dielectric substrate and the second dielectric substrate are both Taonic TLY-5, and the thickness of the first dielectric substrate and the second dielectric substrate is 0.51 mm; the third dielectric substrate is Rogers RO4003C, the thickness is 0.508mm, the distance between adjacent through holes is 0.6mm, and the diameter of each through hole is 0.4 mm.

Has the advantages that: the invention discloses a millimeter wave dual-frequency dual-polarization common-aperture antenna with high isolation and low profile, which has the following beneficial effects compared with the prior art:

1. in the invention, the substrate integrated coaxial line feed network is positioned between the adjacent substrate integrated waveguide shielding cavities, thereby effectively reducing the section height of the antenna and improving the aperture utilization efficiency.

2. The metallized shielding hole array shared by the bowtie-shaped transverse slot and the longitudinal slot pair, the high-pass characteristic of the substrate integrated waveguide and the offset of the bowtie-shaped transverse slot effectively inhibit mutual coupling between the two antennas, so that the isolation is improved.

3. The transverse slot fed by the substrate integrated coaxial line and the longitudinal slot fed by the substrate integrated waveguide have wider impedance bandwidth. Meanwhile, the substrate integrated coaxial parallel-series feed power dividing network and the substrate integrated waveguide full-parallel feed power dividing network are adopted to respectively feed the two orthogonally polarized radiation units, so that the bandwidth of the millimeter wave dual-frequency dual-polarized common-aperture antenna is effectively improved. The structure of the invention ensures that the antenna has higher aperture multiplexing efficiency, has wider bandwidth and higher isolation in two frequency bands, and also has the advantages of lower section height and easy integration with a planar circuit.

Drawings

In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.

Fig. 1 is a schematic cross-sectional view of a millimeter wave dual-frequency dual-polarized common-aperture antenna according to an embodiment of the present invention;

FIG. 2 is a structural diagram of a radiation structure layer in the embodiment of FIG. 1;

fig. 3 is a structure diagram of a substrate-based integrated coaxial line feed network in the embodiment of fig. 1;

FIG. 4 is a diagram illustrating the structure of an interlayer gap in the embodiment of FIG. 1;

FIG. 5 is a diagram of a feeding network structure based on a substrate integrated waveguide in the embodiment of FIG. 1;

FIG. 6 is a schematic diagram of a bowtie-shaped transverse slot with substrate integrated coaxial line feed;

FIG. 7 is a schematic diagram of a longitudinal slot pair fed by a substrate integrated waveguide;

FIG. 8 is a graph of reflectance and isolation for a K-band test conducted on an embodiment of the present invention;

FIG. 9 is a graph of reflectance and isolation for a Ka band test conducted on an embodiment of the present invention;

FIG. 10 is a gain plot for testing an embodiment of the present invention;

FIG. 11 is a 17.8GHz radiation pattern for a test conducted on an embodiment of the invention;

FIG. 12 is a radiation pattern of 19.2GHz from an embodiment of the invention;

FIG. 13 is a graph of the radiation pattern of 20.4GHz after testing an embodiment of the invention;

FIG. 14 is a radiation pattern of 26.6GHz after testing an embodiment of the invention;

FIG. 15 is a radiation pattern of 28.8GHz after testing an embodiment of the invention;

FIG. 16 is a radiation pattern of 31GHz after testing an embodiment of the invention;

description of reference numerals:

the antenna comprises a first dielectric substrate 1, an adhesive layer 2, a second dielectric substrate 3, a third dielectric substrate 4, a substrate integrated coaxial line feed network 5, a substrate integrated waveguide feed network 6, an interlayer gap 7, a substrate integrated waveguide shielding cavity 8, a longitudinal gap pair 9, a bowtie-shaped transverse gap 10, a mounting hole 11, a grounding coplanar waveguide to substrate integrated coaxial line structure 12, a bending line 13, a metalized matching hole 16, a microstrip line to substrate integrated waveguide structure 17, a radiation structure layer 18 and a metalized hole array 19.

Detailed Description

The following description of the embodiments of the present application is provided for illustrative purposes, and other advantages and capabilities of the present application will become apparent to those skilled in the art from the present disclosure.

In the following description, reference is made to the accompanying drawings that describe several embodiments of the application. It is to be understood that other embodiments may be utilized and structural and operational changes may be made without departing from the spirit of the present invention. The following detailed description is not to be taken in a limiting sense, and the scope of embodiments of the present application is defined only by the claims of the patent of the present application. The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the application.

The technical means disclosed in the present invention are not limited to the technical means disclosed in the following embodiments, and include technical means composed of any combination of the following technical features.

Also, as used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context indicates otherwise. It will be further understood that the terms "comprises," "comprising," "includes" and/or "including," when used in this specification, specify the presence of stated features, steps, operations, elements, components, items, species, and/or groups, but do not preclude the presence, or addition of one or more other features, steps, operations, elements, components, items, species, and/or groups thereof.

As shown in fig. 1 and fig. 2, the millimeter wave dual-frequency dual-polarized common-aperture antenna with high isolation and low profile provided in this embodiment sequentially includes, from bottom to top, a substrate integrated waveguide feed network 6, an interlayer gap 7, a substrate integrated coaxial feed network 5, and a radiation structure layer 18, where the radiation structure layer 18 includes a pair of longitudinal slots 9 and a bow-tie-shaped transverse slot 10. The low-frequency electromagnetic wave firstly passes through the grounding coplanar waveguide-to-substrate integrated coaxial line structure 12, then passes through the substrate integrated coaxial line feed network 5, and finally radiates the horizontal polarized wave through the bowtie-shaped transverse slot 10 in the radiation structure layer 18. The high-frequency-band electromagnetic wave firstly passes through the microstrip line-to-substrate integrated waveguide structure 17, then passes through the substrate integrated waveguide feed network 6, and finally radiates the vertical polarized wave by the longitudinal slot pair 9 in the radiation structure layer 18. A first dielectric substrate 1 is arranged between the radiation structure layer 18 and the substrate integrated coaxial line feed network 5, a second dielectric substrate 3 is arranged between the substrate integrated coaxial line feed network 5 and the interlayer gap 7, and the substrate integrated waveguide feed network 6 is integrated in a third dielectric substrate 4.

As a preferred embodiment, the substrate integrated coaxial feeding network 5 is in parallel-series feeding form and is located below the substrate integrated coaxial feeding network, as shown in fig. 3. The electromagnetic wave is first divided into sixteen paths of signals in parallel and then serially fed to the bowtie-shaped transverse slot 10. Compared with the traditional serial feed network, the substrate integrated coaxial line feed network 5 reduces the long line effect, thereby effectively widening the bandwidth of the antenna at a low frequency band.

In a preferred embodiment, as shown in fig. 4, each inter-layer slot 7 is surrounded by the substrate-integrated waveguide shielding cavity 8 formed by the metalized hole array 19 and is located below the longitudinal slot pair 9.

As a preferred embodiment, the substrate integrated waveguide feed network 6 is in a full parallel feed form, as shown in fig. 5. Wherein the metallized matching holes 16 are used to improve the reflection coefficient of the antenna. The electromagnetic wave is first divided into sixty-four signals in parallel and then the longitudinal slot pair 9 is fed with power in parallel.

In a preferred embodiment, the radiation structure layer 18 is composed of bow-tie-shaped transverse slits 10 and longitudinal slit pairs 9, an alternating layout is adopted, and the substrate integrated waveguide shielding cavities 8 composed of the metallized hole arrays are shared, so that the aperture utilization efficiency and the isolation degree are improved.

Specifically, the substrate integrated coaxial feeding network 5 is located between adjacent substrate integrated waveguide shielding cavities 8, and the bowtie-shaped transverse slot 10 is located above the substrate integrated coaxial feeding network 5, keeps a certain offset distance from the substrate integrated coaxial feeding network 5, and is located at the center of two rows of metallized hole arrays 19, as shown in fig. 6. By controlling the offset distance, the antenna can achieve ideal impedance matching characteristics. The array of metallized holes 19 shared with the pair of longitudinal slits 9 effectively suppresses the parallel plate pattern.

Specifically, the substrate integrated waveguide feed network 6 is located in the third dielectric substrate 4, and the pair of longitudinal slots 9 is located above the inter-layer slot 7, is symmetrical with respect to the inter-layer slot, and is offset from the inter-layer slot by a certain distance, as shown in fig. 7. The longitudinal slot pairs 9 are surrounded by a substrate integrated waveguide shielded cavity 8 formed by an array of four columns of metallized holes 19. The metallized hole array 19 penetrates from the radiation structure layer 18 to the interlayer gap 7 through the first dielectric substrate 1, the adhesive layer 2 and the second dielectric substrate 3. The interlayer slot 7 and the longitudinal slot pair 9 contribute two independent resonance points to the antenna, so that the bandwidth of the antenna in a high frequency band is widened.

In a preferred embodiment, the meander line 13 is used between array elements in the bow-tie shaped array of transverse slots 10 to ensure in-phase radiation of the array of transverse slots, as shown in fig. 3. The terminal of the last unit of each linear array is an open circuit, and the length of the branch of the open circuit can be used for adjusting impedance matching.

In a preferred embodiment, the grounded coplanar waveguide to substrate integrated coaxial line structure 12 is a planar via structure.

In some embodiments, the first dielectric substrate 1 and the second dielectric substrate 3 are laminated by the adhesive layer 2. The antenna provided by the embodiment is composed of a first dielectric substrate 1, an adhesive layer 2, a second dielectric substrate 3 and a third dielectric substrate 4 from top to bottom. Taconic TLY-5 was used for the first dielectric substrate 1 and the second dielectric substrate 3, the dielectric constant was 2.2, and the loss tangent was 0.0009, and Rogers RO4003C was used for the third dielectric substrate 4, the dielectric constant was 3.55, and the loss tangent was 0.0027. Rogers 4450F was used for the adhesive layer 2, which had a dielectric constant of 3.52 and a loss tangent of 0.004. The longitudinal slot pair 9 and the bow-tie-shaped transverse slot 10 are located on the upper surface of a first dielectric substrate A1, the substrate integrated coaxial line feed network 5 is located on the upper surface of a second dielectric substrate 3, the first dielectric substrate 1 and the second dielectric substrate 3 are pressed by a bonding layer 2 through a double-layer circuit board process, the grounding coplanar waveguide to substrate integrated coaxial line structure 12 is located on the upper surface of the second dielectric substrate 3, the interlayer slot 7 is located on the lower surface of the second dielectric substrate 3 and the upper surface of a third dielectric substrate 4, the substrate integrated waveguide feed network 6 is located in the third dielectric substrate 4, and the microstrip line to substrate integrated waveguide structure 17 is located on the lower surface of the third dielectric substrate 4. The whole antenna has 28 mounting holes 11 and is fixed by using M3 nylon columns.

The antenna provided by the present example was tested for reflection coefficient, directivity pattern and gain using a PNA-X N5247A vector network analyzer and a microwave darkroom. The dimensions of the antenna are 116.2 mm x 99.3 mm. Fig. 8 and 9 show the reflection coefficient and isolation of the antenna tested in the K-band and Ka-band. The-10 dB impedance bandwidth of the antenna tested in the K wave band is 2.8 GHz (17.7 GHz-20.5 GHz), and the relative bandwidth is 14.7%. The-10 dB impedance bandwidth of the antenna tested in the Ka waveband is 6GHz (26 GHz-32 GHz), and the relative bandwidth is 20.7%. The tested isolation of the antenna in the K wave band and the Ka wave band is larger than 60 dB and 50 dB. Fig. 10 is a comparison of the simulated and tested gains of the antenna in the K-band and Ka-band. The maximum gain of the antenna test was 21.4 dBi and 22 dBi, respectively, and the 3 dB gain bandwidth was 14.7% and 15.3%. Fig. 11 to 16 are simulated and tested patterns of the antenna in the K-band and Ka-band. The cross polarization level of the antenna tested in the two frequency bands is respectively lower than-25 dB and-30 dB, the antenna has a stable directional diagram in a wider bandwidth, and the side lobe is lower than-10 dB. The test result shows that the antenna has higher aperture multiplexing efficiency, has wider bandwidth and higher isolation in two frequency bands, and also has the advantages of lower section height and easy integration with a planar circuit.

The above embodiments are merely illustrative of the principles and utilities of the present application and are not intended to limit the application. Any changes or substitutions that may be easily made by those skilled in the art within the technical scope of the present disclosure are intended to be included within the scope of the present disclosure. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.