阅读说明：本技术 喷淋装置、半导体处理设备以及喷淋反应物的方法 (Spraying device, semiconductor processing equipment and method for spraying reactants ) 是由 李双 于 2019-08-30 设计创作，主要内容包括：该发明涉及一种喷淋装置、半导体处理设备以及喷淋反应物的方法,能够提高晶圆的电性均一性,保证晶圆的电性稳定性。所述喷淋装置包括：至少两套相互独立的管路组件；每套所述管路组件均包含反应物源,流量控制器,喷嘴以及若干管路；在每套所述管路组件中,所述反应物源通过所述管路连通所述流量控制器,所述流量控制器通过所述管路连通至所述喷嘴,且对由所述反应物源中流出并通过所述喷嘴喷出的反应物的流量进行控制；在各套所述管路组件中的所述喷嘴的喷淋方向在同一平面上,并形成至少一个非零的夹角,其中,通过各套所述管路组件中所述喷嘴喷出的所述反应物具有重叠区域。(The invention relates to a spraying device, semiconductor processing equipment and a method for spraying reactants, which can improve the electrical uniformity of a wafer and ensure the electrical stability of the wafer. The spraying device comprises: at least two sets of mutually independent pipeline components; each set of pipeline components comprises a reactant source, a flow controller, a nozzle and a plurality of pipelines; in each set of the conduit assemblies, the reactant source is in communication with the flow controller through the conduit, the flow controller is in communication with the nozzle through the conduit, and controls the flow of the reactant from the reactant source and out through the nozzle; the spray directions of the nozzles in each set of the pipeline assemblies are on the same plane and form at least one non-zero included angle, wherein the reactants sprayed out through the nozzles in each set of the pipeline assemblies have an overlapping region.)

1. A spray device, comprising:

at least two sets of mutually independent pipeline components;

each set of pipeline components comprises a reactant source, a flow controller, a nozzle and a plurality of pipelines;

in each set of the conduit assemblies, the reactant source is in communication with the flow controller through the conduit, the flow controller is in communication with the nozzle through the conduit, and controls the flow of the reactant from the reactant source and out through the nozzle;

the spray directions of the nozzles in each set of the pipeline assemblies are on the same plane and form at least one non-zero included angle, wherein the reactants sprayed out through the nozzles in each set of the pipeline assemblies have an overlapping region.

2. The spray device of claim 1 wherein the number of said conduit assemblies is two, and the spray directions of the first nozzles of the first set of conduit assemblies and the second nozzles of the second set of conduit assemblies form a predetermined angle, said predetermined angle being in the range of 10 ° to 30 °.

3. The shower apparatus of claim 1, wherein each set of said conduit assemblies further comprises a plurality of valves positioned on said conduits communicating between said reactant source and said nozzles.

4. A semiconductor processing apparatus comprising the shower device according to any one of claims 1 to 3, wherein the nozzle is provided in a reaction chamber of the semiconductor processing apparatus, and sprays the reactant toward a wafer placed on a wafer placement position in the reaction chamber.

5. The semiconductor processing apparatus according to claim 4, wherein the number of the pipeline assemblies is two, and a plane in which the spraying directions of the first nozzles of the first set of pipeline assemblies and the second nozzles of the second set of pipeline assemblies are located is parallel to a plane in which the wafer is placed, and the spraying direction of the first nozzles faces a center position of the wafer placement position, and the spraying direction of the second nozzles forms a preset angle with the spraying direction of the first nozzles, and the preset angle ranges from 10 ° to 30 °.

6. A method of spraying reactants, comprising the steps of:

a wafer placing position for placing the wafer into the reaction chamber;

dividing the surface of the wafer into at least two areas;

respectively spraying reactants towards each area on the surface of the wafer, rotating the wafer, and forming a film layer on the surface of the wafer;

detecting the thickness of each area film layer on the surface of the wafer;

and controlling the spraying of the reactants in each area according to the thickness of the film layer in each area on the surface of the wafer so as to balance the thickness of the film layer in each area.

7. The method of claim 6, wherein the wafer surface is divided into two regions, a center region and an edge region, and wherein the center region and the edge region of the wafer surface are sprayed with the reactant by a first spray and a second spray, respectively.

8. The method as claimed in claim 7, wherein the thickness of the film in the central region and the thickness of the film in the edge region are detected respectively when the thickness of the film in each region of the wafer surface is detected.

9. The method of claim 8, wherein the first spraying is performed a first predetermined number of times to a center region of the wafer surface and the second spraying is performed a second predetermined number of times to an edge region of the wafer surface while the reactant is sprayed to the wafer surface, the first and second predetermined numbers being determined by a film thickness of the center region and a film thickness of the edge region.

10. The method as claimed in claim 8, wherein the reactants are sprayed onto the wafer surface by the first spray continuously spraying the central region of the wafer surface and by the second spray continuously spraying the edge region of the wafer surface, and the flow rates of the first and second sprays are determined by the film thickness of the central region and the film thickness of the edge region.

Technical Field

The invention relates to the field of semiconductor processing equipment, in particular to a spraying device, semiconductor processing equipment and a method for spraying reactants.

Background

In the prior art, when a new film structure is formed by depositing an atomic layer on the surface of a wafer in a furnace tube, the situation that the thicknesses of the film structures on the surface of the wafer are different often occurs, the uniformity of the film structure is poor, the electric property of the wafer is uneven, and the stability is poor.

Disclosure of Invention

The invention aims to provide a spraying device, semiconductor processing equipment and a method for spraying reactants, which can improve the electrical uniformity of a wafer and ensure the electrical stability of the wafer.

In order to solve the above technical problem, the following provides a spray device, including: at least two sets of mutually independent pipeline components; each set of pipeline components comprises a reactant source, a flow controller, a nozzle and a plurality of pipelines; in each set of the conduit assemblies, the reactant source is in communication with the flow controller through the conduit, the flow controller is in communication with the nozzle through the conduit, and controls the flow of the reactant from the reactant source and out through the nozzle; the spray directions of the nozzles in each set of the pipeline assemblies are on the same plane and form at least one non-zero included angle, wherein the reactants sprayed out through the nozzles in each set of the pipeline assemblies have an overlapping region.

Optionally, the number of the pipeline assemblies is two, and the spraying directions of the first nozzles in the first set of pipeline assemblies and the second nozzles in the second set of pipeline assemblies form a preset angle, and the preset angle ranges from 10 ° to 30 °.

Optionally, each set of the conduit assemblies further comprises a plurality of valves positioned on the conduit communicating between the reactant source and the nozzle.

In order to solve the technical problem, the following further provides a semiconductor processing apparatus, including the spraying device, where the nozzle is disposed in a reaction chamber of the semiconductor processing apparatus, and sprays a reactant toward a wafer placed on a wafer placement position in the reaction chamber.

Optionally, the number of the pipeline assemblies is two, the planes of the spraying directions of the first nozzles in the first pipeline assembly and the second nozzles of the second pipeline assembly are parallel to the plane of the wafer placing position, the spraying direction of the first nozzles faces the center of the wafer placing position, the spraying direction of the second nozzles and the spraying direction of the first nozzles form a preset angle, and the range of the preset angle is 10 degrees to 30 degrees.

In order to solve the above technical problem, the following further provides a method for spraying reactants, comprising the following steps: a wafer placing position for placing the wafer into the reaction chamber; dividing the surface of the wafer into at least two areas; respectively spraying reactants towards each area on the surface of the wafer, rotating the wafer, and forming a film layer on the surface of the wafer; detecting the thickness of each area film layer on the surface of the wafer; and controlling the spraying of the reactants in each area according to the thickness of the film layer in each area on the surface of the wafer so as to balance the thickness of the film layer in each area.

Optionally, the wafer surface is divided into two regions, which are a central region and an edge region, and the central region and the edge region of the wafer surface are sprayed with the reactant by the first spraying and the second spraying, respectively.

Optionally, when the thickness of the film layer in each region of the wafer surface is detected, the thickness of the film layer in the central region and the thickness of the film layer in the edge region are respectively detected.

Optionally, when the reactant is sprayed on the surface of the wafer, the first spray is used for spraying for a first preset number of times to the central region of the surface of the wafer, the second spray is used for spraying for a second preset number of times to the edge region of the surface of the wafer, and the first preset number of times and the second preset number of times are determined by the thickness of the film layer in the central region and the thickness of the film layer in the edge region.

Optionally, when the reactant is sprayed on the surface of the wafer, the first spray continuously sprays the reactant to the central region of the surface of the wafer, the second spray continuously sprays the reactant to the edge region of the surface of the wafer, and the flow rate of the first spray and the flow rate of the second spray are determined by the thickness of the film layer in the central region and the thickness of the film layer in the edge region.

The spraying device, the semiconductor processing equipment and the method for spraying the reactants are provided with two mutually independent nozzles, the flow of the reactants can be respectively regulated and controlled, the concentration of the reaction gas at the edge and the central area of the wafer can be kept constant, the deposition density is kept consistent, and the film thickness uniformity of the central area and the edge area of the wafer and the uniform stability of the electrical property of a product are improved.

Drawings

Fig. 1 is a schematic connection diagram of a spraying device according to an embodiment of the present invention.

FIG. 2 is a top view of a semiconductor processing apparatus in accordance with one embodiment of the present invention.

Fig. 3 is a schematic thickness diagram of silicon nitride sidewall insulating layers formed corresponding to different regions of a wafer when silicon nitride sidewall insulating layers are formed on two sides of a gate formed on a surface of a substrate in the prior art.

Fig. 4 is a schematic thickness diagram of silicon nitride sidewall insulating layers formed corresponding to different regions of a wafer when the silicon nitride sidewall insulating layers are formed on both sides of a gate formed on a surface of the substrate by using a spraying apparatus, a semiconductor processing apparatus, and a method of spraying a reactant according to an embodiment of the present invention.

FIG. 5 is a schematic flow chart of a method for spraying reactants according to an embodiment of the present invention.

Detailed Description

Researches find that the spraying device for spraying the reaction gas in the furnace tube in the prior art causes the situations of uneven thickness, uneven electrical property and poor stability of the film layer on the surface of the wafer in the prior art. Specifically, the spray device in the furnace tube in the prior art is of a single-tube structure, and although the spray device has two nozzles, one nozzle directly sprays the reaction gas toward the central region of the wafer, and the other nozzle is offset from the central region of the wafer and sprays the reaction gas toward the edge region of the wafer, the spray regions still overlap with each other, so that the reaction gas amount in the overlap region is large, and the thickness of the film layer deposited in the overlap region is also thick. This is an important reason for the poor electrical uniformity and stability of the wafer.

Fig. 3 is a schematic thickness diagram of a silicon nitride sidewall insulating layer 305 formed on different regions of a wafer 201 when forming the silicon nitride sidewall insulating layer 305 on both sides of a gate electrode 302 and a gate insulating layer (303 and 304) formed on a surface of a substrate 301 in the prior art. In fig. 3, a plug conductive layer 306 formed on the upper surface of the substrate 301 is also formed on the silicon nitride sidewall insulating layer 305 side. When the silicon nitride sidewall insulating layers 305 are formed on both sides of the gate electrode 302 formed on the surface of the substrate 301, in the prior art, the thicknesses of the silicon nitride sidewall insulating layers 305 deposited on the surface of the wafer 201 are different because the spraying ranges of the two nozzles are overlapped: the thickness of the silicon nitride sidewall insulating layer 305 deposited on the surface of the wafer 201 is thicker in the region 203 with the overlapped spraying range, and the thickness of the silicon nitride sidewall insulating layer 305 deposited on the surface of the wafer 201 is thinner in the region 203 with the non-overlapped spraying range. This results in poor electrical uniformity and stability of the semiconductor structure.

Specifically, on the surface of the same wafer 201, in the overlapping region of the spraying range, such as the central region, the silicon nitride sidewall insulating layer 305 on both sides of the gate 302 is thicker, and the leakage current is smaller. In the non-overlapping region 203 of the shower region, such as the edge region, the silicon nitride sidewall insulating layer 305 is thinner and the leakage current is larger.

In order to solve the above problems, a spraying apparatus, a semiconductor processing apparatus, and a method for spraying a reactant according to the present invention will be described in further detail with reference to the accompanying drawings and embodiments.

Referring to fig. 1 and 2, fig. 1 is a schematic diagram illustrating a connection relationship of a spray device according to an embodiment of the present invention, and fig. 2 is a top view of a semiconductor processing apparatus according to an embodiment of the present invention.

In this particular embodiment, there is provided a spray device comprising: at least two sets of mutually independent conduit assemblies 100; each set of piping assemblies 100 comprises a reactant source 101, a flow controller 103, a nozzle, and a plurality of pipes; in each set of conduit assemblies 100, the reactant source 101 is in communication with the flow controller 103 via a conduit, and the flow controller 103 is in communication with the nozzle via a conduit, and controls the flow of the reactant exiting the reactant source 101 and exiting the nozzle.

In this embodiment, the number of the conduit assemblies 100 is two, and in each conduit assembly 100, the reactant source 101 communicates with the flow controller 103 through a conduit, and the flow controller 103 communicates with the nozzles through a conduit, and controls the flow rate of the reactant flowing from the reactant source 101 and ejected through the nozzles, so that the flow rate of each nozzle can be controlled separately.

In an embodiment, when the spraying device is applied to the atomic layer deposition technology of the wafer 201, the spraying device can respectively spray the reactants to a plurality of areas of the wafer 201, and can also control the amount of the reactants sprayed out from each nozzle as required, so that the concentration of the reactants in each area on the surface of the wafer 201 can be effectively ensured to be consistent, the deposition density of each area on the surface of the wafer 201 is kept to be consistent, the thickness of the film formed in each area on the surface of the wafer 201 is also kept to be consistent, and the thickness of the film on the surface of the wafer 201 has high uniformity and electrical uniformity and stability.

In one embodiment, the spraying directions of the first nozzle 1021 and the second nozzle 1022 form a predetermined angle. The non-zero angle between the two nozzles is designed to spray the reactants onto different areas of the surface of the wafer 201. Providing reactant sources 101 in accordance with the number of nozzles further facilitates control of the amount of reactant ejected from the nozzles.

In one embodiment, the predetermined angle is in the range of 10 ° to 30 °. Therefore, the spraying device can be applied to the atomic layer deposition process of the surface of the wafer 201, and the reaction gas is sprayed to different areas of the surface of the wafer 201, so that the film thickness of the different areas of the surface of the wafer 201 is consistent.

In one embodiment, the spraying direction of the second nozzles 1022 and the spraying direction of the first nozzles 1021 form a predetermined angle of 15 °, at which the spraying range of the two nozzles is large.

In other specific embodiments, the number of the pipeline assemblies 100 is more than three, and at this time, spraying to more than three areas on the surface of the wafer 201 can be controlled respectively, so that a better spraying effect can be obtained, and a more uniform film layer is deposited on the surface of the wafer 201.

In one embodiment, the sparger further comprises a plurality of valves 104 positioned in the conduit between the reactant source 101 and the nozzles. The valve 104 is provided so that the flow controller 103 is provided, the amount of the reactant ejected from the nozzle can be secondarily controlled by the valve 104, and the ejection of the reactant can be controlled by the valve 104 when the flow controller 103 is damaged.

In one embodiment, the flow controller 103 includes a mass flow controller MFC or the like, and the specific configuration of the flow controller 103 may be selected as desired.

In one embodiment, the reactant source 101 includes a storage tank that stores the reactant. The reactant includes at least one of a reaction gas and a reaction liquid. In this embodiment, each nozzle is connected to each storage tank through a separate communication line.

In this embodiment, there is also provided a semiconductor processing apparatus 200 comprising a spray device having a spray nozzle disposed in a reaction chamber 202 of the semiconductor processing apparatus 200 and spraying a reactant toward a wafer 201 placed on a wafer placement site in the reaction chamber 202.

In this embodiment, a shower apparatus is provided in the semiconductor processing apparatus 200, and the shower apparatus has two or more sets of the pipe assemblies 100, so that the flow rates of the respective nozzles can be individually controlled.

In one embodiment, when performing atomic layer deposition on the surface of the wafer 201 in the semiconductor processing apparatus 200, the spraying device can spray the reactant to the plurality of regions of the wafer 201, and can also control the amount of the reactant sprayed from each nozzle as required, so that the concentration of the reactant in each region of the surface of the wafer 201 can be effectively ensured to be consistent, the deposition density of each region of the surface of the wafer 201 can be kept consistent, the thickness of the film formed in each region of the surface of the wafer 201 can be kept consistent, and the thickness of the film on the surface of the wafer 201 has high uniformity and electrical uniformity and stability.

In this embodiment, the semiconductor processing apparatus 200 is a furnace. When performing atomic layer deposition on the surface of the wafer 201 in the furnace, the wafer 201 is placed in the furnace chamber of the furnace, and the wafer placement position in the furnace chamber is rotatable.

In one embodiment, the wafer placement locations within the reaction chamber 202 of the semiconductor processing apparatus 200 are each rotatable, with the wafer 201 placed thereon rotating about a line perpendicular to the wafer placement locations. This enables the reactant ejected from each nozzle of the shower apparatus to be sprayed to the entire surface of the wafer 201 placed on the wafer placing position.

In one embodiment, the number of the pipe assemblies 100 is two, the spraying directions of the first nozzles 1021 in the first pipe assembly 100 and the second nozzles 1022 in the second pipe assembly 100 form a predetermined angle, and the plane of the spraying directions of the two nozzles is parallel to the plane of the wafer placing position.

In one embodiment, the predetermined angle is non-zero. The non-zero angle between the two nozzles is provided to allow the two nozzles to spray different areas of the surface of the wafer 201 when spraying the reactants. Providing reactant sources 101 in accordance with the number of nozzles further facilitates control of the amount of reactant ejected from the nozzles.

In other embodiments, the number of the reactant sources 101, the number of the nozzles, and the number of the flow controllers 103 are three or more, and in this case, the spraying of three or more regions on the surface of the wafer 201 can be controlled respectively, so as to obtain a better spraying effect and deposit a more uniform film on the surface of the wafer 201.

In one embodiment, the spraying direction of the two nozzles is parallel to the wafer placing position, and after the reactant is sprayed, the reactant falls onto the surface of the wafer 201 under the action of gravity to perform atomic layer deposition on the surface of the wafer 201.

In one embodiment, the spraying direction of the first nozzle 1021 is directed toward the center position of the wafer placing position, and the spraying direction of the second nozzle 1022 and the spraying direction of the first nozzle 1021 form a predetermined angle in a range of 10 ° to 30 ° to ensure spraying of the entire surface of the wafer 201.

In one embodiment, the spraying direction of the second nozzles 1022 and the spraying direction of the first nozzles 1021 form a predetermined angle of 15 °, at which the two nozzles can cover a larger spraying range without spraying more reactant out of the surface of the wafer 201.

In this embodiment, when the wafer 201 is placed on the wafer placement site, the center of the wafer 201 coincides with the center of the wafer placement site, and thus the spraying direction of the first nozzle 1021 is directed toward the center of the wafer placement site and also toward the center of the wafer 201. The amount of the reactant sprayed by the first nozzle 1021 affects the thickness of the film formed on the center of the surface of the wafer 201. The spraying direction of the second nozzle 1022 and the spraying direction of the first nozzle 1021 form a non-zero included angle, so that the spraying direction of the second nozzle 1022 deviates from the center position of the wafer 201 by a preset angle, and at this time, the second nozzle 1022 can spray the reactant to the edge position of the wafer 201, so that both the center position and the edge position of the wafer 201 have the reactant to be sprayed, and a better film deposition effect is obtained.

Fig. 5 is a flow chart illustrating a method for spraying reactants in a furnace according to an embodiment of the present invention.

In this embodiment, there is also provided a method of spraying reactants, comprising the steps of: s51, placing the wafer 201 into the wafer placing position in the reaction chamber 202; s52 dividing the surface of the wafer 201 into at least two regions; s53, respectively spraying reactants towards each area of the surface of the wafer 201, rotating the wafer 201, and forming a film layer on the surface of the wafer 201; s54, detecting the thickness of the film layer in each area on the surface of the wafer 201; s55, spraying the reactant in each region is controlled according to the thickness of the film layer in each region on the surface of the wafer 201, so as to balance the film layer thickness furnace tube in each region.

In one embodiment, the wafer placement locations within the reaction chamber 202 are all rotatable, with the wafer 201 placed thereon rotating about a line perpendicular to the wafer placement locations. This enables the reactant ejected from each nozzle of the shower apparatus to be sprayed to the entire surface of the wafer 201 placed on the wafer placing position.

In one embodiment, the surface of the wafer 201 is divided into two regions, a center region and an edge region, and the center region and the edge region of the surface of the wafer 201 are sprayed with the reactant by the first spray 205 and the second spray 204, respectively. In this embodiment, the spray ranges of the first spray 205 and the second spray 204 cover the entire surface of the wafer 201, and the spray regions of the first spray 205 and the second spray 204 overlap between the center region and the edge region of the wafer 201.

In this embodiment, different areas on the surface of the wafer 201 are respectively sprayed, so that the gas deposition reaction on the surface of the wafer 201 can be kept uniform during the atomic layer deposition on the surface of the wafer 201, thereby ensuring that the deposition film thickness of the wafer 201 is relatively uniform.

In one embodiment, when the thickness of the film layer in each region of the surface of the wafer 201 is detected, the thickness of the film layer in the center region and the thickness of the film layer in the edge region are respectively detected. In one embodiment, the thickness of the film layer in each region of the surface of the wafer 201 can be detected by the leveling sensor. In fact, other devices capable of detecting the film thickness of each region on the surface of the wafer 201 may be provided as required to detect the film thickness of each region on the surface of the wafer 201.

In one embodiment, when the reactant is sprayed on the surface of the wafer 201, the first spray 205 sprays the reactant to the central region of the surface of the wafer 201 for a first predetermined number of times, and the second spray 204 sprays the reactant to the edge region of the surface of the wafer 201 for a second predetermined number of times, where the first predetermined number of times and the second predetermined number of times are determined by the film thickness of the central region and the film thickness of the edge region.

In this embodiment, the amounts of the reactants sprayed from each of the first spray 205 and the second spray 204 are equal, and thus the control of the amount of the first spray 205 and the amount of the second spray 204 can be achieved by controlling the first preset number of times and the second preset number of times.

In one embodiment, the first spray 205 and the second spray 204 each have an initial predetermined number of times, and the initial predetermined number of times is the same and is N. In the ald process, the first spray 205 and the second spray 204 are independently and simultaneously performed. When the thickness of the central area of the surface of the wafer 201 is detected to be thicker than the preset thickness, the spraying frequency of the first spraying 205 is reduced to M, and M is more than 0 and less than N, and the spraying frequency of the second spraying 204 is kept unchanged. When the thickness of the edge area of the surface of the wafer 201 is thinner than the preset thickness, the spraying frequency of the second spraying 204 is increased to S, wherein S is more than N and more than 0, and the spraying frequency of the first spraying 205 is kept unchanged. In this particular embodiment, the preset number of first and second sprays 205, 204 is based on actual calculations.

In one embodiment, when the reactant is sprayed on the surface of the wafer 201, the first spray 205 continuously sprays the reactant to the central region of the surface of the wafer 201, and the second spray 204 continuously sprays the reactant to the edge region of the surface of the wafer 201, and the flow rate of the first spray 204 and the flow rate of the second spray 205 are determined by the film thickness of the central region and the film thickness of the edge region.

In this embodiment, the center region of the wafer 201 has an overlap of the first spray 204 and the second spray 205, and therefore, is thicker than the edge region, so that, in general, the total amount of the first spray is less than the total amount of the second spray.

In practice, the amount of the reactant sprayed by the first spray 205 and the amount of the reactant sprayed by the second spray 204 may be determined by the thickness of the film layer formed in each region of the surface of the wafer 201.

In one embodiment, the flow ratio of the first spray 205 to the second spray 204 is set to 1: 1, and the first spray 205 and the second spray 204 are independently and simultaneously performed during the ald process. When the central area of the surface of the wafer 201 is detected to be thicker than the preset thickness, the flow rate of the reaction gas sprayed by the first spray 205 is reduced, and the flow rate of the reaction gas sprayed by the second spray 204 is kept unchanged, wherein the flow rate ratio of the first spray 205 to the second spray 204 is (1-x) to 1, and x is more than 0 and less than 1. When the thickness of the edge area of the surface of the wafer 201 is thinner than the preset thickness, the flow rate of the reaction gas sprayed by the second spray 204 is increased, and the flow rate of the reaction gas sprayed by the first spray 205 is kept unchanged, wherein the flow rate ratio of the first spray 205 to the second spray 204 is 1 to (1+ y), and y is more than 0 and less than 1. When it is detected that the thickness of the central area of the surface of the wafer 201 is thicker than the preset thickness and the thickness of the edge area of the surface of the wafer 201 is thinner than the preset thickness, the flow rates of the first spray 205 and the second spray 204 need to be adjusted at the same time, at this time, the flow rate ratio of the first spray 205 to the second spray 204 is (1-x): (1+ y), wherein x is greater than 0 and less than 1, and y is greater than 0 and less than 1.

In fact, when the spraying amount of the first spraying 205 and the second spraying 204 is adjusted by adjusting the spraying times, the spraying amount of each spraying can be adjusted at the same time, so that when the required total spraying amount is large or small, the spraying amount of each spraying can be adjusted, the spraying amount of each spraying is larger or smaller, and the first spraying and the second spraying which are large or small in total spraying amount can be finely adjusted conveniently.

Referring to fig. 4, a thickness of a silicon nitride sidewall insulating layer 305 formed on different regions of a wafer 201 when the silicon nitride sidewall insulating layer 305 is formed on two sides of a gate electrode 302 formed on a surface of a substrate 301 by using a spraying apparatus, a semiconductor processing apparatus 200 and a method of spraying a reactant according to an embodiment of the present invention is illustrated.

In this embodiment, the semiconductor processing apparatus 200 is a furnace.

In this embodiment, when the silicon nitride sidewall insulating layers 305 are formed on both sides of the gate electrode 302 formed on the surface of the substrate 301, even if the spraying ranges of the two nozzles overlap, the thickness of the silicon nitride sidewall insulating layers 305 deposited on each region of the surface of the wafer 201 is uniform, and the uniformity is good. Thus, in each region of the surface of the same wafer 201, the thickness of the silicon nitride sidewall insulating layer 305 on both sides of the gate 302 is consistent, and the magnitude of the leakage current meets the preset requirement. This greatly improves the electrical uniformity and stability of the film formed on the surface of the wafer 201.

It is found through experiments that after the silicon nitride sidewall insulating layer 305 is formed on both sides of the gate 302 formed on the surface of the substrate 301 by using the spraying device, the furnace and the method of spraying the reactant in the furnace, the uniformity of the thickness of the film formed on the surface of the wafer 201 is greatly improved compared to the prior method of spraying the reactant in the spraying device, the furnace and the furnace. For example, after the silicon nitride sidewall insulating layers 305 are formed on both sides of the gate 302 formed on the surface of the 100 wafers 201 by using the shower apparatus, the furnace and the method of spraying the reactant in the furnace, the thicknesses of the film layers formed on the surface of the single wafers 201 are respectively 15.08nm, 15.09nm and 15.15nm from the edge portion to the middle portion to the center portion, and before the shower apparatus, the furnace and the method of spraying the reactant in the furnace, the thicknesses of the film layers formed on the surface of the single wafers 201 are respectively 14.86nm, 15.04nm and 15.37nm from the edge portion to the middle portion to the center portion.

In this embodiment, after the silicon nitride sidewall insulating layers 305 are formed on both sides of the gate 302 formed on the surface of the substrate 301 by using the spraying device, the furnace and the method of spraying the reactant in the furnace, the thicknesses of the layers formed on the surfaces of the wafers 201 stacked in the wafer boat from top to bottom in the furnace are also closer, specifically, it is known in experiments that the average value of the thicknesses of the layers formed on the surfaces of the wafers 201 stacked in the middle of the furnace is 15.11, the average value of the thicknesses of the layers formed on the surfaces of the wafers 201 stacked at the bottom of the furnace is 15.09, and when the device, the furnace and the method are not used, the average value of the thicknesses of the layers formed on the surfaces of the wafers 201 stacked in the middle of the furnace is 15.07, and the average value of the thicknesses of the layers formed on the surfaces of the wafers 201 at the bottom of the furnace is 15.17.

Therefore, the spraying device, the furnace and the method for spraying the reactant in the furnace can not only improve the uniformity of the thickness of the film formed in the single wafer 201, but also improve the uniformity of the thickness of the film formed on the surface of the wafer 201 placed at different positions in the furnace.

The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and decorations can be made without departing from the principle of the present invention, and these modifications and decorations should also be regarded as the protection scope of the present invention.