阅读说明：本技术 一种高速集成可调光延时线与制备方法 (High-speed integrated adjustable light delay line and preparation method thereof ) 是由 顾晓文 钱广 王琛全 周奉杰 于 2020-10-22 设计创作，主要内容包括：本发明公开了一种高速集成可调光延时线与制备方法,其衬底材料为硅材料,波导材料为氮化硅光波导和铌酸锂光波导,铌酸锂材料为薄膜材料,其结构包括2×2光开关、每阶的延时线和2×1的合波器；2×2光开关由氮化硅光波导、多模干涉耦合器、铌酸锂光波导和开关电极组成；每阶的延时线包含两条不同长度的延时路径,通过光开关切换选择不同的波导路径,从而进行延时状态的切换,实现不同的延时量。本发明通过将氮化硅光波导和铌酸锂光波导结合,延时波导部分采用氮化硅,充分利用氮化硅光波导的低损耗,开关波导部分采用铌酸锂,充分利用铌酸锂光波导光电效应开关的高速；采用基于BCB的键合工艺,工艺更加灵活,不需要使用化学机械抛光工艺。(The invention discloses a high-speed integrated adjustable optical delay line and a preparation method thereof, wherein a substrate material is a silicon material, waveguide materials are a silicon nitride optical waveguide and a lithium niobate optical waveguide, and the lithium niobate material is a thin film material, and the structure of the high-speed integrated adjustable optical delay line comprises a 2 x 2 optical switch, a delay line of each step and a 2 x 1 wave combiner; the 2 x 2 optical switch consists of a silicon nitride optical waveguide, a multimode interference coupler, a lithium niobate optical waveguide and a switch electrode; each stage of delay line comprises two delay paths with different lengths, and different waveguide paths are switched and selected through an optical switch, so that the delay state is switched, and different delay amounts are realized. According to the invention, the silicon nitride optical waveguide and the lithium niobate optical waveguide are combined, the silicon nitride is adopted in the delay waveguide part, the low loss of the silicon nitride optical waveguide is fully utilized, the lithium niobate is adopted in the switch waveguide part, and the high speed of the switch of the photoelectric effect of the lithium niobate optical waveguide is fully utilized; and a bonding process based on BCB is adopted, so that the process is more flexible, and a chemical mechanical polishing process is not required.)

1. A high-speed integrated adjustable optical delay line is characterized in that a substrate material is a silicon material, waveguide materials are a silicon nitride optical waveguide and a lithium niobate optical waveguide, the lithium niobate material is a thin film material, the structure of the lithium niobate optical waveguide is a binary topological structure, and an n-order delay line comprises n 2 multiplied by 2 optical switches, each-order delay line and 1 2 multiplied by 1 wave combiner; the 2 x 2 optical switch consists of a silicon nitride optical waveguide, 2 x 2 multimode interference couplers, a lithium niobate optical waveguide and a switch electrode, wherein 4 ports of the multimode interference couplers are connected with the silicon nitride optical waveguide, and the 2 multimode interference couplers are coupled with evanescent waves of the lithium niobate optical waveguide through the silicon nitride optical waveguide; each stage of delay line comprises two delay paths with different lengths, and the delay path difference is respectively delta t, 2 delta t, … and 2^n-1And delta t, the two paths are respectively connected with two ports of the 2 multiplied by 2 optical switch, so that different waveguide paths are selected by switching of the optical switch, the switching of the delay state is carried out, and different delay amounts are realized.

2. A high speed integrated tunable optical delay line as in claim 1, wherein the width of the silicon nitride optical waveguide is 1-2 microns, including the silicon nitride optical waveguide in the delay path and switch.

3. The high-speed integrated tunable optical delay line of claim 1, wherein the width of the lithium niobate optical waveguide is 1-2 microns, the lithium niobate optical waveguide is coupled with the silicon nitride optical waveguide, the silicon nitride optical waveguide at the coupling part adopts a wedge structure, and the width of the silicon nitride optical waveguide at the narrowest part is 0.25-0.5 microns.

4. A method for preparing a high-speed integrated tunable optical delay line as claimed in claim 1, comprising the steps of:

1) growing silicon oxide and silicon nitride media on a silicon substrate material in sequence, preparing a photoresist mask of a silicon nitride optical waveguide pattern by adopting a planar photoetching development technology, etching to prepare a silicon nitride optical waveguide, and coating BCB for soft curing for later use;

2) coating high-temperature wax on a silicon-based thin film lithium niobate material, carrying out temporary bonding with a temporary carrier of a sapphire material, and finally removing a silicon substrate and a silicon oxide layer;

3) bonding the temporarily bonded lithium niobate thin film with a wafer of a silicon nitride optical waveguide coated with BCB, removing a temporary slide glass and cleaning;

4) preparing a photoresist mask of a lithium niobate optical waveguide pattern by adopting a plane photoetching development technology, and etching to prepare a lithium niobate optical waveguide;

5) preparing a photoresist pattern of a lithium niobate switch area by adopting a plane photoetching development technology, and etching to remove lithium niobate in a non-switch area;

6) growing a silicon oxide cladding, preparing a photoresist pattern of the lithium niobate switch electrode by adopting a plane photoetching development technology, etching an electrode medium hole, and preparing the switch electrode by adopting an electron beam evaporation and stripping process or an electroplating process.

5. The method according to claim 4, wherein the silicon oxide grown in step 1) is formed by thermal oxidation to a thickness of 2-4 μm; the silicon nitride is grown by low-pressure chemical vapor deposition with a thickness of 100-800 nm.

6. The method according to claim 4, wherein the etching of the silicon nitride optical waveguide in step 1) is performed by using inductively coupled plasma etching based on a mixed gas of sulfur hexafluoride, trifluoromethane and oxygen; the thickness of the coated BCB was 1.5-2 microns.

7. The method for preparing a high-speed integrated tunable optical delay line according to claim 4, wherein the silicon substrate and the silicon oxide layer in the step 2) are removed by a process of matching mechanical thinning, wet etching and dry etching.

8. The method as claimed in claim 4, wherein the etching of the lithium niobate optical waveguide in the step 4) is performed by sulfur hexafluoride gas-based inductively coupled plasma etching, and the etching depth is 200-400 nm.

9. The method for preparing a high-speed integrated tunable optical delay line according to claim 4, wherein the silicon oxide cladding layer in step 6) is grown by plasma enhanced chemical vapor deposition and has a thickness of 1-3 μm.

10. The method for preparing a high-speed integrated tunable light delay line according to claim 4, wherein the electrode dielectric hole in the step 6) is etched by using inductively coupled plasma based on trifluoromethane gas; the electrode adopts electron beam evaporation of 20 nm titanium and 800 nm gold, or electroplating of 1.5-3 μm gold.

Technical Field

The invention belongs to the technical field of integrated photonic devices and preparation, and particularly relates to a high-speed integrated adjustable light delay line and a preparation method thereof.

Background

The adjustable light delay line is one of key modules in signal processing and communication, and is mainly used for delaying the microwave frequency band in the phased array radar. In phased array radar systems, the phase shifter configuration of a conventional electric domain phased array antenna is related to the microwave signal frequency, which makes its instantaneous bandwidth very narrow. In order to realize the large instantaneous bandwidth of the phased array radar, a true delay technology is adopted to replace an electric domain phase shifter, microwave signals are modulated onto light, and an optical waveguide is used as a delay loop, namely the optical true delay technology.

However, the conventional optical delay line, which uses the conventional optical delay line adopting the optical fiber delay and optical switch switching manner as an example, has the problems of large size and weight, poor portability, low delay precision, incapability of meeting the use requirement, and the like. The on-chip adjustable optical delay line is generally divided into two schemes, one is a group delay line based on a resonant cavity type, and the other is a true delay line based on optical waveguide path delay. The former has the advantages of continuous time delay, large loss and narrow bandwidth; the latter has wider bandwidth and higher delay precision, but the delay amount is fixed delay and needs multi-stage cascade connection to be matched with an optical switch.

Disclosure of Invention

The invention provides a high-speed integrated adjustable optical delay line and a preparation method thereof, aiming at solving the problems of improving the switching speed, the delay precision, the integration degree and the like of the optical delay line aiming at an integrated and miniaturized optical delay line scheme, and providing a delay structure combining a silicon nitride optical waveguide path and a lithium niobate optical switch, exerting the advantages of low loss of the silicon nitride optical waveguide and high speed of the lithium niobate optical switch, and realizing the high-speed integrated adjustable optical delay line.

The technical solution for realizing the purpose of the invention is as follows: a high-speed integrated adjustable optical delay line is composed of silicon substrate and waveguideThe material is a silicon nitride optical waveguide and a lithium niobate optical waveguide, the lithium niobate material is a thin film material, the structure is a binary topological structure, and the n-order delay line comprises n 2 multiplied by 2 optical switches, each-order delay line and 1 2 multiplied by 1 wave combiner; the 2 x 2 optical switch consists of a silicon nitride optical waveguide, 2 x 2 multimode interference couplers, a lithium niobate optical waveguide and a switch electrode, wherein 4 ports of the multimode interference couplers are connected with the silicon nitride optical waveguide, and the 2 multimode interference couplers are coupled with evanescent waves of the lithium niobate optical waveguide through the silicon nitride optical waveguide; each stage of delay line comprises two delay paths with different lengths, and the delay path difference is respectively delta t, 2 delta t, … and 2^n-1And delta t, the two paths are respectively connected with two ports of the 2 multiplied by 2 optical switch, so that different waveguide paths are selected by switching of the optical switch, the switching of the delay state is carried out, and different delay amounts are realized.

Furthermore, the width of the silicon nitride optical waveguide is 1-2 microns, and the silicon nitride optical waveguide comprises a delay path and a switch.

Furthermore, the width of the lithium niobate optical waveguide is 1-2 microns, the lithium niobate optical waveguide is coupled with the silicon nitride optical waveguide, the silicon nitride optical waveguide at the coupling part adopts a wedge-shaped structure, and the width of the silicon nitride optical waveguide at the narrowest part is 0.25-0.5 micron.

A preparation method of a high-speed integrated tunable optical delay line comprises the following steps:

1) firstly, sequentially growing silicon oxide and silicon nitride media on a silicon substrate material, preparing a photoresist mask of a silicon nitride optical waveguide pattern by adopting a planar photoetching development technology, etching to prepare a silicon nitride optical waveguide, and coating BCB for soft curing for later use;

2) coating high-temperature wax on a silicon-based thin film lithium niobate material, carrying out temporary bonding with a temporary carrier of a sapphire material, and finally removing a silicon substrate and a silicon oxide layer;

3) bonding the temporarily bonded lithium niobate thin film with a wafer of a silicon nitride optical waveguide coated with BCB, removing a temporary slide glass and cleaning;

4) preparing a photoresist mask of a lithium niobate optical waveguide pattern by adopting a plane photoetching development technology, and etching to prepare a lithium niobate optical waveguide;

5) preparing a photoresist pattern of a lithium niobate switch area by adopting a plane photoetching development technology, and etching to remove lithium niobate in a non-switch area;

6) growing a silicon oxide cladding, preparing a photoresist pattern of the lithium niobate switch electrode by adopting a plane photoetching development technology, etching an electrode medium hole, and preparing the switch electrode by adopting an electron beam evaporation and stripping process or an electroplating process.

Further, the silicon oxide grown in the step 1) adopts a thermal oxidation method, and the thickness is 2-4 microns; the silicon nitride is grown by low-pressure chemical vapor deposition, and the thickness is 100-800 nm; the silicon nitride optical waveguide is etched by adopting inductive coupling plasma based on mixed gas of sulfur hexafluoride, trifluoromethane and oxygen; the thickness of the coated BCB was 1.5-2 microns.

Further, the silicon substrate and the silicon oxide layer in the step 2) are removed by adopting a process of matching mechanical thinning, wet etching and dry etching.

Further, the etching of the lithium niobate optical waveguide in the step 4) adopts sulfur hexafluoride gas-based inductively coupled plasma etching, and the etching depth is 200-400 nm.

Further, the silicon oxide coating in the step 6) grows by adopting plasma enhanced chemical vapor deposition, and the thickness is 1-3 microns; the electrode dielectric hole is etched by adopting inductively coupled plasma based on trifluoromethane gas; the electrode adopts electron beam evaporation of 20 nm titanium and 800 nm gold, or electroplating of 1.5-3 μm gold.

Compared with the prior art, the invention has the following remarkable advantages:

1) by combining the silicon nitride optical waveguide and the lithium niobate optical waveguide, the silicon nitride is adopted in the delay waveguide part, the low loss of the silicon nitride optical waveguide is fully utilized, and the lithium niobate is adopted in the switch waveguide part, so that the high speed of the switch is fully utilized due to the photoelectric effect of the lithium niobate optical waveguide;

2) and compared with a direct bonding process based on silicon oxide, the bonding process based on BCB is more flexible and does not need a chemical mechanical polishing process.

Drawings

FIG. 1 is a schematic diagram of a silicon nitride optical waveguide fabrication.

Fig. 2 is a schematic diagram of thin film lithium niobate temporary bonding.

FIG. 3 is a schematic diagram of the bonding of a silicon nitride optical waveguide with thin film lithium niobate.

FIG. 4 is a schematic diagram of the fabrication of a lithium niobate optical waveguide.

Fig. 5 is a schematic diagram of the switch region definition.

FIG. 6 is a schematic of the silica cladding and electrode preparation.

Fig. 7 is a schematic view of the structure of the light delay line.

Fig. 8 is a simulation optical field diagram of coupling of a silicon nitride optical waveguide and a lithium niobate optical waveguide.

S in FIG. 7₁、S₂、S₃…S_nIs a 2X 2 optical switch, which is composed of 1.1 silicon nitride optical waveguide, 1.2 multi-mode interference coupler, 1.3 lithium niobate optical waveguide and 1.4 switch electrode, T₁、T₂…T_nIs a delay line of each step, the delay line of each step comprises two delay paths with different lengths, and the delay path difference is respectively delta t and 2 delta t … 2^n-1Δ t, C is a 2 × 1 combiner.

Detailed Description

As shown in FIG. 7, the high-speed integrated tunable optical delay line has a substrate made of silicon material, waveguide made of silicon nitride optical waveguide and lithium niobate optical waveguide, and lithium niobate material made of thin film material with a thickness of 600 nm and a binary topology structure including 2 × 2 optical switch S₁、S₂、S₃…S_nDelay line T of each step₁、T₂…T_nAnd a 2 × 1 combiner C; the 2 x 2 optical switch is composed of a silicon nitride optical waveguide 1.1, a multimode interference coupler 1.2, a lithium niobate optical waveguide 1.3 and a switch electrode 1.4. Each stage of delay line comprises two delay paths with different lengths, and the difference of the delay paths is respectively delta t and 2 delta t … 2^n-1And delta t, different waveguide paths are switched and selected through the optical switch, so that the switching of the delay state is performed, and different delay amounts are realized.

The width of the silicon nitride optical waveguide is 1-3 microns, and the silicon nitride optical waveguide comprises a delay path and a silicon nitride optical waveguide in a switch.

The width of the lithium niobate optical waveguide is 1-2 microns, the lithium niobate optical waveguide is coupled with the silicon nitride optical waveguide, the silicon nitride optical waveguide at the coupling part adopts a wedge-shaped structure, the width of the silicon nitride optical waveguide at the narrowest part is 0.25-0.5 microns, as shown in figure 8, the optical field diagram of the coupling of the silicon nitride optical waveguide and the lithium niobate optical waveguide clearly shows the process of coupling the optical wave from the silicon nitride optical waveguide to the lithium niobate optical waveguide.

The preparation method specifically comprises the following steps:

1) firstly, growing silicon oxide with the thickness of 2-4 microns on a silicon substrate material through thermal oxidation, then growing a silicon nitride medium with the thickness of 100-800 nanometers through low-pressure chemical vapor deposition, preparing a photoresist mask of a silicon nitride optical waveguide pattern by adopting a planar photoetching development technology, then preparing a silicon nitride strip waveguide through etching by adopting inductive coupling plasma based on mixed gas of sulfur hexafluoride, trifluoromethane and oxygen, soaking and ultrasonically treating the silicon nitride strip waveguide by sequentially using N-methyl pyrrolidone, acetone and ethanol after etching, removing the residual photoresist, washing the silicon nitride strip waveguide by using deionized water to complete the preparation of the waveguide, coating BCB with the thickness of 1.5-2 microns after cleaning, and carrying out soft curing for later use, as shown in figure 1;

2) coating high-temperature wax on a silicon-based thin film lithium niobate material, temporarily bonding the silicon-based thin film lithium niobate material with a temporary carrier of a sapphire material, and finally removing a silicon substrate and a silicon oxide layer by adopting a process of matching mechanical thinning, wet etching and dry etching, as shown in figure 2;

3) bonding the temporarily bonded lithium niobate thin film with a silicon nitride optical waveguide wafer coated with BCB, heating to remove a temporary slide glass, and finally cleaning with toluene, acetone and ethanol, as shown in figure 3;

4) preparing a photoresist mask of a lithium niobate optical waveguide pattern by adopting a plane photoetching development technology, and preparing a lithium niobate optical waveguide by adopting inductive coupling plasma etching based on sulfur hexafluoride gas, wherein the etching depth is 200-400 nm, as shown in figure 4;

5) preparing a photoresist mask of a lithium niobate switch area by adopting a plane photoetching development technology, and then removing lithium niobate in a non-switch area by adopting sulfur hexafluoride gas-based inductively coupled plasma etching, as shown in fig. 5;

6) adopting plasma enhanced chemical vapor deposition to grow a silicon oxide cladding with the thickness of 1-3 microns, adopting a plane photoetching development technology to prepare a photoresist pattern of the lithium niobate switch electrode, adopting inductive coupling plasma based on trifluoromethane gas to etch an electrode medium hole, finally adopting electron beams to evaporate 20 nm titanium and 800 nm gold, and preparing the switch electrode by a stripping process. The switch electrode can also be realized by electroplating process, and gold of 1.5-3 microns is electroplated as the electrode, as shown in fig. 6.

Example 1

As shown in FIG. 7, the high-speed integrated tunable optical delay line has a substrate made of silicon material, waveguide made of silicon nitride optical waveguide and lithium niobate optical waveguide, and lithium niobate material made of thin film material with a thickness of 600 nm and a binary topology structure including 2 × 2 optical switch S₁、S₂、S₃…S_nDelay line T of each step₁、T₂…T_nAnd a 2 × 1 combiner C; the 2 x 2 optical switch is composed of a silicon nitride optical waveguide 1.1, a multimode interference coupler 1.2, a lithium niobate optical waveguide 1.3 and a switch electrode 1.4. Each stage of delay line comprises two delay paths with different lengths, and the difference of the delay paths is respectively delta t and 2 delta t … 2^n-1And delta t, different waveguide paths are switched and selected through the optical switch, so that the switching of the delay state is performed, and different delay amounts are realized.

The width of the silicon nitride optical waveguide is 1 micron, and the silicon nitride optical waveguide comprises a delay path and a silicon nitride optical waveguide in a switch.

The width of the lithium niobate optical waveguide is 1.2 microns, the lithium niobate optical waveguide is coupled with the silicon nitride optical waveguide, the silicon nitride optical waveguide at the coupling part adopts a wedge-shaped structure, the width of the silicon nitride optical waveguide at the narrowest part is 0.3 microns, as shown in fig. 8, the optical field diagram of the coupling of the silicon nitride optical waveguide and the lithium niobate optical waveguide clearly shows the process of coupling the optical wave from the silicon nitride optical waveguide to the lithium niobate optical waveguide.

The preparation method specifically comprises the following steps:

1) firstly, growing silicon oxide with the thickness of 4 microns on a silicon substrate material through thermal oxidation, then growing a silicon nitride medium with the thickness of 600 nanometers through low-pressure chemical vapor deposition, preparing a photoresist mask of a silicon nitride optical waveguide pattern by adopting a planar photoetching development technology, then preparing a silicon nitride strip waveguide by adopting inductive coupling plasma etching based on mixed gas of sulfur hexafluoride, trifluoromethane and oxygen, soaking and ultrasonically treating the silicon nitride strip waveguide by sequentially using N-methylpyrrolidone, acetone and ethanol after etching, removing the residual photoresist, washing the silicon nitride strip waveguide by using deionized water, coating BCB with the thickness of 1.5 microns after cleaning, and carrying out soft curing for later use, as shown in figure 1;

2) coating high-temperature wax on a silicon-based thin film lithium niobate material, temporarily bonding the silicon-based thin film lithium niobate material with a temporary carrier of a sapphire material, and finally removing a silicon substrate and a silicon oxide layer by adopting a process of matching mechanical thinning, wet etching and dry etching, as shown in figure 2;

3) bonding the temporarily bonded lithium niobate thin film with a silicon nitride optical waveguide wafer coated with BCB, heating to remove a temporary slide glass, and finally cleaning with toluene, acetone and ethanol, as shown in figure 3;

4) preparing a photoresist mask of a lithium niobate optical waveguide pattern by adopting a plane photoetching development technology, and preparing a lithium niobate optical waveguide by adopting inductive coupling plasma etching based on sulfur hexafluoride gas, wherein the etching depth is 300 nanometers, as shown in figure 4;

5) preparing a photoresist mask of a lithium niobate switch area by adopting a plane photoetching development technology, and then removing lithium niobate in a non-switch area by adopting sulfur hexafluoride gas-based inductively coupled plasma etching, as shown in fig. 5;

6) adopting plasma enhanced chemical vapor deposition to grow a silicon oxide cladding with the thickness of 1-3 microns, adopting a plane photoetching development technology to prepare a photoresist pattern of the lithium niobate switch electrode, adopting inductive coupling plasma based on trifluoromethane gas to etch an electrode medium hole, finally adopting electron beams to evaporate 20 nm titanium and 800 nm gold, and adopting a stripping process to prepare the switch electrode, as shown in figure 6.

Example 2

As shown in FIG. 7, the high-speed integrated tunable optical delay line has a substrate made of silicon material, waveguide made of silicon nitride optical waveguide and lithium niobate optical waveguide, and lithium niobate material made of thin film material with a thickness of 600 nm and a binary topology structure including 2 × 2 optical switch S₁、S₂、S₃…S_nDelay line T of each step₁、T₂…T_nAnd a 2 × 1 combiner C; the 2 x 2 optical switch is composed of a silicon nitride optical waveguide 1.1, a multimode interference coupler 1.2, a lithium niobate optical waveguide 1.3 and a switch electrode 1.4. Each stage of delay line comprises two delay paths with different lengths, and the difference of the delay paths is respectively delta t and 2 delta t … 2^n-1And delta t, different waveguide paths are switched and selected through the optical switch, so that the switching of the delay state is performed, and different delay amounts are realized.

The width of the silicon nitride optical waveguide is 1 micron, and the silicon nitride optical waveguide comprises a delay path and a silicon nitride optical waveguide in a switch.

The width of the lithium niobate optical waveguide is 1.2 microns, the lithium niobate optical waveguide is coupled with the silicon nitride optical waveguide, the silicon nitride optical waveguide at the coupling part adopts a wedge-shaped structure, the width of the silicon nitride optical waveguide at the narrowest part is 0.3 microns, as shown in fig. 8, the optical field diagram of the coupling of the silicon nitride optical waveguide and the lithium niobate optical waveguide clearly shows the process of coupling the optical wave from the silicon nitride optical waveguide to the lithium niobate optical waveguide.

The preparation method specifically comprises the following steps:

1) firstly, growing silicon oxide with the thickness of 4 microns on a silicon substrate material through thermal oxidation, then growing a silicon nitride medium with the thickness of 600 nanometers through low-pressure chemical vapor deposition, preparing a photoresist mask of a silicon nitride optical waveguide pattern by adopting a planar photoetching development technology, then preparing a silicon nitride strip waveguide by adopting inductive coupling plasma etching based on mixed gas of sulfur hexafluoride, trifluoromethane and oxygen, soaking and ultrasonically treating the silicon nitride strip waveguide by sequentially using N-methylpyrrolidone, acetone and ethanol after etching, removing the residual photoresist, washing the silicon nitride strip waveguide by using deionized water, coating BCB with the thickness of 1.5 microns after cleaning, and carrying out soft curing for later use, as shown in figure 1;

2) coating high-temperature wax on a silicon-based thin film lithium niobate material, temporarily bonding the silicon-based thin film lithium niobate material with a temporary carrier of a sapphire material, and finally removing a silicon substrate and a silicon oxide layer by adopting a process of matching mechanical thinning, wet etching and dry etching, as shown in figure 2;

3) bonding the temporarily bonded lithium niobate thin film with a silicon nitride optical waveguide wafer coated with BCB, heating to remove a temporary slide glass, and finally cleaning with toluene, acetone and ethanol, as shown in figure 3;

4) preparing a photoresist mask of a lithium niobate optical waveguide pattern by adopting a plane photoetching development technology, and preparing a lithium niobate optical waveguide by adopting inductive coupling plasma etching based on sulfur hexafluoride gas, wherein the etching depth is 300 nanometers, as shown in figure 4;

5) preparing a photoresist mask of a lithium niobate switch area by adopting a plane photoetching development technology, and then removing lithium niobate in a non-switch area by adopting sulfur hexafluoride gas-based inductively coupled plasma etching, as shown in fig. 5;

6) adopting plasma enhanced chemical vapor deposition to grow a silicon oxide cladding with the thickness of 1-3 microns, adopting a plane photoetching development technology to prepare a photoresist pattern of the lithium niobate switch electrode, adopting inductive coupling plasma based on trifluoromethane gas to etch an electrode medium hole, and finally electroplating 2 microns of gold as an electrode, as shown in figure 6.