阅读说明：本技术 吹扫方法及结构、沉积工艺及进气系统 (Purging method and structure, deposition process and air inlet system ) 是由 张军 郑波 马振国 张少雷 于 2019-04-24 设计创作，主要内容包括：本发明提供的吹扫方法及结构、沉积工艺及进气系统,用于化学气相沉积工艺中,其中基片承载在卡盘上,在进行化学气相沉积工艺的过程中,向基片的边缘输送吹扫气体和工艺气体。由于向基片的边缘通入吹扫气体和工艺气体,其中的工艺气体与通入腔室中的工艺气体反应,促进基片边缘的反应的持续进行,以补充基片边缘的生成物,从而调节基片的边缘的均匀性。(The purging method and the structure, the deposition process and the gas inlet system provided by the invention are used in the chemical vapor deposition process, wherein the substrate is carried on the chuck, and the purging gas and the process gas are conveyed to the edge of the substrate in the chemical vapor deposition process. As the purge gas and the process gas are introduced to the edge of the substrate, the process gas reacts with the process gas introduced into the chamber, and the reaction at the edge of the substrate is promoted to be continuously performed so as to supplement the products at the edge of the substrate, thereby adjusting the uniformity of the edge of the substrate.)

1. A purging method for use in a chemical vapor deposition process wherein a substrate is carried on a chuck; characterized in that the purging method comprises:

Delivering a purge gas and a process gas to an edge of the substrate during the chemical vapor deposition process.

2. A purging method as claimed in claim 1, wherein the step of delivering a purge gas and a process gas to the edge of the substrate during the performing of the chemical vapor deposition process further comprises:

a first purge stage to deliver the purge gas to an edge of the substrate;

and a second purging stage for delivering a mixture of a purge gas and a process gas to the edge of the substrate.

3. A purging method according to claim 2, wherein the flow ratio of the purge gas to the process gas in the mixed gas ranges from 10:1 to 100: 1.

4. A purge method as claimed in claim 3, wherein the flow rate of the process gas ranges from 1sccm to 20 sccm.

5. A purging method according to claim 1 or 2, wherein the purge gas comprises an inert gas; the process gas includes a reaction-inhibiting gas or a reaction-promoting gas.

6. A process, comprising:

feeding a first process gas into the reaction chamber while supplying a purge gas and a second process gas to the edge of the substrate using the purge method of any of claims 1-5.

7. The process of claim 6, wherein the first process gas comprises a halide gas and a basic gas; the second process gas comprises a halide gas.

8. A purging structure for delivering gas to an edge of a substrate disposed on a chuck, the purging structure comprising a mixing line, a first gas inlet line, a second gas inlet line, a first gas source, and a second gas source, wherein,

the gas outlet end of the mixing pipeline is arranged at the edge of the substrate and used for supplying purge gas and process gas to the edge of the substrate;

the air outlet end and the air inlet end of the first air inlet pipeline are respectively connected with the air inlet end of the mixing pipeline and the first air source;

the air outlet end and the air inlet end of the second air inlet pipeline are respectively connected with the air inlet end of the mixing pipeline and the second air source;

the first gas source is used for providing the purge gas;

the second gas source is used for providing the process gas.

9. The purge structure according to claim 8, wherein a first on-off valve and a first flow rate control valve are provided on the first intake line; and a second cut-off valve and a second flow control valve are arranged on the second air inlet pipeline.

10. The gas inlet system comprises a gas inlet structure and a purging structure, wherein the gas inlet structure is used for introducing a first process gas into a reaction chamber; wherein the purge structure is as defined in any one of claims 8 to 9, and is adapted to supply the purge gas and the second process gas to the edge of the substrate.

Technical Field

The invention belongs to the technical field of semiconductor manufacturing, and particularly relates to a purging method and structure, a deposition process and an air inlet system.

Background

In Integrated Circuit (IC) fabrication processes, particularly Chemical Vapor Deposition (CVD) processes, a Vacuum Chuck (Vacuum Chuck) is commonly used in order to hold, support and transport the wafer and to achieve temperature control and to avoid movement or misalignment during the process.

Fig. 1 is a schematic structural diagram of a vacuum chuck in the prior art. As shown in fig. 1, a vacuum chuck 301 is used to carry a substrate 401, and the chamber 101, together with the liner 102 and the vacuum chuck 301, form a process environment. Before the process is performed, Ar or N is introduced into the gas inlet 204 ₂The process pressure is maintained in the chamber while the back-blow line is opened to allow the process pressure to be greater than the back-blow pressure, thereby stabilizing the substrate 401 on the vacuum chuck 301. In order to prevent the product from adhering to the side or the back of the substrate 401 during the process, Ar or N is also required to be introduced into the edge purge line 303₂To blow away the product.

However, the following problems inevitably occur in the structure of the vacuum chuck:

first, edge purge gases can affect the gas uniformity at the edge of the substrate;

secondly, since the reaction gas is pumped away from the periphery, the special requirements for the deposition area cannot be achieved, as in

The area can not be deposited or etched;

thirdly, if need adjust the edge homogeneity, can only blow the subassembly or fortune gas structure realization through changing the edge, but the research and development cycle of edge blowing subassembly or fortune gas structure is long, consuming time and wasting power.

Disclosure of Invention

The invention aims to at least solve one of the technical problems in the prior art, and provides a purging method, a purging structure, a deposition process and a gas inlet system so as to solve the problem of gas uniformity at the edge of a substrate in the prior art.

As one aspect of the invention, the invention provides a purging method for use in a chemical vapor deposition process wherein a substrate is carried on a chuck; wherein the purging method comprises:

Delivering a purge gas and a process gas to an edge of the substrate during the chemical vapor deposition process.

Further, the step of delivering a purge gas and a process gas to the edge of the substrate during the performing of the chemical vapor deposition process further comprises:

a first purge stage to deliver the purge gas to an edge of the substrate;

and a second purging stage for delivering a mixture of a purge gas and a process gas to the edge of the substrate.

Further, in the mixed gas, the flow ratio of the purge gas to the process gas ranges from 10:1 to 100: 1.

Furthermore, the flow rate of the process gas ranges from 1sccm to 20 sccm.

Further, the purge gas comprises an inert gas; the process gas includes a reaction-inhibiting gas or a reaction-promoting gas.

As another aspect of the invention, the invention provides a process comprising:

and introducing a first process gas into the reaction chamber, and simultaneously conveying a purging gas and a second process gas to the edge of the substrate by adopting the purging method provided by the invention.

Further, the first process gas comprises a halide gas and a basic gas; the second process gas comprises a halide gas.

As a further aspect of the invention, there is provided a purge arrangement for delivering gas to an edge of a substrate disposed on a chuck, wherein the purge arrangement comprises a mixing line, a first gas inlet line, a second gas inlet line, a first gas source, and a second gas source, wherein,

the gas outlet end of the mixing pipeline is arranged at the edge of the substrate and used for supplying purge gas and process gas to the edge of the substrate;

the air outlet end and the air inlet end of the first air inlet pipeline are respectively connected with the air inlet end of the mixing pipeline and the first air source;

the air outlet end and the air inlet end of the second air inlet pipeline are respectively connected with the air inlet end of the mixing pipeline and the second air source;

the first gas source is used for providing the purge gas;

the second gas source is used for providing the process gas.

Furthermore, a first on-off valve and a first flow control valve are arranged on the first air inlet pipeline; and a second cut-off valve and a second flow control valve are arranged on the second air inlet pipeline.

As another aspect of the present invention, the present invention further provides a gas inlet system, including a gas inlet structure and a purging structure, wherein the gas inlet structure is used for introducing a first process gas into the reaction chamber; the purging structure provided by the invention is used for conveying the purging gas and the second process gas to the edge of the substrate.

The invention has the following beneficial effects:

the invention provides a purging method for a chemical vapor deposition process, wherein a substrate is carried on a chuck, and a purging gas and a process gas are supplied to the edge of the substrate during the chemical vapor deposition process. As the purge gas and the process gas are introduced to the edge of the substrate, the process gas reacts with the process gas introduced into the chamber, the reaction at the edge of the substrate is promoted to be continuously carried out, so that the products at the edge of the substrate are supplemented, and the uniformity of the edge of the substrate is adjusted.

The first process gas is introduced into the reaction chamber, and simultaneously the purging method provided by the invention is adopted to convey the purging gas and the second process gas to the edge of the substrate, and the first process gas and the second process gas conveyed from the edge react at the edge of the substrate to promote the continuous reaction at the edge of the substrate so as to supplement products at the edge of the substrate and adjust the uniformity of the edge of the substrate.

The purging structure provided by the invention is used for conveying gas to the edge of a substrate arranged on a chuck, and comprises a mixing pipeline, a first air inlet pipeline, a second air inlet pipeline, a first air source and a second air source, wherein the air outlet end of the mixing pipeline is arranged at the edge of the substrate and is used for providing purging gas and process gas to the edge of the substrate; the air outlet end and the air inlet end of the first air inlet pipeline are respectively connected with the air inlet end of the mixing pipeline and a first air source; the air outlet end and the air inlet end of the second air inlet pipeline are respectively connected with the air inlet end of the mixing pipeline and a second air source; a first gas source for providing a purge gas; the second gas source is used for providing process gas. The purging structure provided by the invention can be used for conveying the process gas to the edge of the substrate, and the process gas reacts with the process gas introduced into the cavity to promote the continuous reaction of the edge of the substrate so as to supplement the product at the edge of the substrate and adjust the uniformity of the edge of the substrate.

The gas inlet system comprises a gas inlet structure and a purging structure, wherein the gas inlet structure is used for introducing first process gas into a reaction chamber, and the purging structure adopts the purging structure provided by the invention and is used for conveying the purging gas and second process gas to the edge of a substrate. By using the gas inlet structure provided by the invention, the first process gas and the second process gas delivered from the edge react at the edge of the substrate, so that the reaction at the edge of the substrate is promoted to be continuously carried out, the products at the edge of the substrate are supplemented, and the uniformity of the edge of the substrate is adjusted.

Drawings

FIG. 1 is a schematic diagram of a prior art vacuum chuck;

fig. 2 is a schematic structural diagram of a purge structure provided in an embodiment of the present invention.

Wherein the content of the first and second substances,

1-a mixing line; 2-a first inlet line; 21-a first on-off valve; 22 a first flow control valve; 3-a second inlet line; 31-a second on-off valve; 32-a second flow control valve; 4-a first gas source; 5-a second gas source; 6-a substrate; 7-a chuck; 101-a chamber; 102-a liner; 204-an air inlet; 301-vacuum chuck; 303-edge purge line; 401-substrate.

Detailed Description

In order to make the technical solutions of the present invention better understood by those skilled in the art, the purging method and structure, the deposition process, and the gas inlet system provided by the present invention are described in detail below with reference to the accompanying drawings.

As one aspect of the present invention, an embodiment of the present invention provides a purging method for use in a chemical vapor deposition process in which a substrate is carried on a chuck, the purging method including:

during the CVD process, a purge gas and a process gas are supplied to the edge of the substrate.

As the purge gas and the process gas are introduced to the edge of the substrate, the process gas reacts with the process gas introduced into the chamber, the reaction at the edge of the substrate is promoted to be continuously carried out, so that the products at the edge of the substrate are supplemented, and the uniformity of the edge of the substrate is adjusted. In addition, the uniformity is adjusted by adjusting the type and the proportion of the edge purging gas, so that hardware replacement is avoided.

Wherein the step of delivering a purge gas and a process gas to the edge of the substrate during the chemical vapor deposition process further comprises:

a first purge stage of delivering a purge gas to the edge of the substrate;

and a second purging stage for supplying a mixed gas of a purge gas and a process gas to the edge of the substrate.

It should be noted that, taking the deposition process as an example, the first purge stage is used to take the process gas away from the edge of the substrate, promote the reaction to continue, and improve the efficiency, so as to prevent the solid in the reaction product from adhering to the side surface or the back surface of the substrate. However, the first purge step affects a large area of the edge of the substrate, which is the edge of the substrate that cannot be deposited, resulting in poor process uniformity, and even if the gas flow is adjusted, the process cannot meet the requirements. Therefore, in the second purging stage, a mixed gas of a purge gas and a process gas is supplied to the edge of the substrate to adjust the product of the edge and to adjust the uniformity of the edge of the substrate.

For the purpose of the first and second purge stages, in this embodiment, the purge gas comprises an inert gas, such as N₂Ar, He, etc., to avoid process on the side or backside of the substrate. Process gas bagIncluding reaction-inhibiting gases or reaction-promoting gases, to subject the edge of the substrate to the process.

In this embodiment, the thickness of the edge deposit of the substrate can be adjusted by adjusting the flow ratio of the purge gas to the process gas. Preferably, in the mixed gas, the flow ratio of the purge gas to the process gas ranges from 10:1 to 100:1, and of course, the optimal flow ratio can also be determined according to the requirements of the actual process.

Wherein the flow of the process gas ranges from 1sccm to 20 sccm.

As another aspect of the present invention, the present invention also provides a process comprising:

and introducing a first process gas into the reaction chamber, and simultaneously conveying a purging gas and a second process gas to the edge of the substrate by adopting the purging method provided by the embodiment of the invention.

By the process method provided by the invention, the first process gas and the second process gas delivered from the edge react at the edge of the substrate, so that the reaction at the edge of the substrate is promoted to be continuously carried out, the products at the edge of the substrate are supplemented, and the uniformity of the edge of the substrate is adjusted.

In the following, the deposition process is taken as an example to describe the process method provided by the embodiment of the invention in detail. And introducing GaS C and a first process Gas GaS D into the reaction chamber, and conveying a purge Gas GaS A and a second process Gas GaS B to the edge of the substrate. The Gas C reacts with the first process Gas D to obtain solid E and Gas F, the solid E is deposited on the substrate, and the purge Gas A has the function of preventing the solid E in a product from being attached to the side face or the back face of the substrate and taking away the Gas F from the edge of the substrate, so that the reaction is promoted to be continuously carried out, and the efficiency is improved. The second process Gas GaS B is the same as GaS C, enters from the edge of the substrate and reacts with the first process Gas GaS D in the reaction chamber, so that a solid E is formed at the edge of the substrate to supplement products at the edge and adjust the uniformity of the edge of the substrate.

As described above, in the present embodiment, the second process Gas B is supplied not only to the edge of the substrate but also to the same Gas C reacted with the first process Gas D in the reaction chamber to perform a conventional deposition process in the reaction chamber.

Optionally, the second process gases GaS B and GaS C are halide gases, such as HCl, HF or other acidic gases, with a flow rate in the range of 100-.

Optionally, the first process Gas GaS D is a basic Gas, such as NH₃The flow range is 100-.

Optionally, the purge gas is N₂The flow rate is 1000-3000 sccm.

It should be noted that, in the embodiment, the chemical vapor deposition process is taken as an example to illustrate the technical solution of the present invention, but in practical application, the present invention is not limited to this, and the process method provided by the present invention can also be applied to an etching process, and only the types of the first process gas and the second process gas need to be adaptively adjusted.

As yet another aspect of the invention, embodiments of the invention provide a purge arrangement for delivering gas to an edge of a substrate placed on a chuck.

Fig. 2 is a schematic structural diagram of a purge structure provided in an embodiment of the present invention. As shown in fig. 2, the purge structure includes a mixing line 1, a first air intake line 2, a second air intake line 3, a first air source 4, and a second air source 5. Wherein the gas outlet end of the mixing pipeline 1 is arranged at the edge of the substrate 6 and is used for supplying the purge gas and the process gas to the edge of the substrate 6. The air outlet end and the air inlet end of the first air inlet pipeline 1 are respectively connected with the air inlet end of the mixing pipeline 1 and the first air source 4; the air outlet end and the air inlet end of the second air inlet pipeline 3 are respectively connected with the air inlet end of the mixing pipeline 1 and the second air source 5. Wherein a first gas source 4 is used to provide a purge gas and a second gas source 5 is used to provide a process gas.

The purging structure provided by the invention can be used for conveying the process gas to the edge of the substrate, and the process gas reacts with the process gas introduced into the cavity to promote the continuous reaction of the edge of the substrate so as to supplement the product at the edge of the substrate and adjust the uniformity of the edge of the substrate.

Further, the first intake pipe 2 is provided with a first on-off valve 21 and a first flow rate control valve 22, and the second intake pipe 3 is provided with a second on-off valve 31 and a second flow rate control valve 32. The flow rates of the purge gas and the process gas are controlled by the first flow control valve 22 and the second flow control valve 32, respectively, so as to adjust the flow rate ratio of the purge gas and the process gas. Whether the purge gas and the process gas are supplied or not is controlled by the first on-off valve 21 and the second flow control valve 32, respectively.

Preferably, the number of the first on-off valves 21 is two, provided respectively upstream and downstream of the first flow rate control valve 22. The number of the second flow rate control valves 32 is two, and disposed respectively upstream and downstream of the second flow rate control valves 32.

The air outlet end of the mixing pipeline 1 is located on the outer side of the bearing surface of the chuck, which is used for bearing the substrate, and is arranged upwards.

In the embodiment, the mixing pipeline 1 is a pipeline for independently introducing the purge gas in the prior art, on the basis of the prior art, a second gas inlet pipeline for introducing the process gas is added at the lower part of the chuck, the second gas inlet pipeline is connected with the pipeline for introducing the purge gas in the prior art in parallel, and the purge gas and the process gas are mixed and then enter the mixing pipeline in the chuck together, so that the structure of the chuck is prevented from being improved, and hardware is prevented from being replaced.

It should be noted that, although the first gas inlet pipeline and the second gas inlet pipeline are connected in parallel and then connected in series with the mixing pipeline in the embodiment, the present invention is not limited to this, and in practical applications, the purge gas and the process gas may be delivered to the edge of the substrate by other manners. For example, two independent gas inlet pipelines are arranged to respectively convey purge gas and process gas to the edge of the substrate, and at the moment, the chuck needs to be modified; alternatively, the prior art chuck may be continued with the first and second gas inlet lines inserted into the channels of the prior art chuck, wherein the gases in the first and second gas inlet lines do not mix when they reach the edge region of the substrate, and no modification of the prior art chuck is required. In summary, the present invention does not limit the specific connection manner of the first gas inlet pipeline and the second gas inlet pipeline, as long as the purge gas and the process gas can be delivered to the edge of the substrate.

The invention further provides a gas inlet system which comprises a gas inlet structure and a purging structure, wherein the gas inlet structure is used for introducing a first process gas into the reaction chamber, and the purging structure is used for delivering the purging gas and a second process gas to the edge of the substrate.

By using the gas inlet structure provided by the invention, the first process gas and the second process gas delivered from the edge react at the edge of the substrate, so that the reaction at the edge of the substrate is promoted to be continuously carried out, the products at the edge of the substrate are supplemented, and the uniformity of the edge of the substrate is adjusted.

It will be understood that the above embodiments are merely exemplary embodiments taken to illustrate the principles of the present invention, which is not limited thereto. It will be apparent to those skilled in the art that various modifications and improvements can be made without departing from the spirit and substance of the invention, and these modifications and improvements are also considered to be within the scope of the invention.