Wideband power amplifier and radio frequency system based on gallium nitride and with fusion filtering function
阅读说明:本技术 基于氮化镓的融合滤波功能的宽带功率放大器及射频系统 (Wideband power amplifier and radio frequency system based on gallium nitride and with fusion filtering function ) 是由 吴永乐 赵洪民 杨雨豪 王卫民 于 2020-07-22 设计创作,主要内容包括:本发明实施例提供了基于氮化镓的融合滤波功能的宽带功率放大器及射频系统,通过将第一切比雪夫滤波电路与前端设备、第一电源以及功放管连接,使得第一切比雪夫滤波电路接收前端设备传输的待处理信号,在第一电源供电时将前端设备的阻抗与功放管的基极的阻抗相匹配,并将待处理信号通过基极传输至功放管;由功放管对该待处理信号进行功率放大;通过将第二切比雪夫滤波电路与功放管、第二电源以及后端设备连接,使得该功放管将功率放大后的信号输出至第二切比雪夫滤波电路;在第二电源供电时,第二切比雪夫滤波电路将集电极的阻抗与后端设备的阻抗相匹配,并将功率放大后的信号通过第二切比雪夫滤波电路输出至后端设备。以提高功率放大器的性能。(The embodiment of the invention provides a broadband power amplifier and a radio frequency system based on a gallium nitride fusion filtering function, wherein a first Chebyshev filter circuit is connected with front-end equipment, a first power supply and a power amplifier tube, so that the first Chebyshev filter circuit receives a signal to be processed transmitted by the front-end equipment, the impedance of the front-end equipment is matched with the impedance of a base electrode of the power amplifier tube when the first power supply supplies power, and the signal to be processed is transmitted to the power amplifier tube through the base electrode; the power amplifier tube amplifies the power of the signal to be processed; the second Chebyshev filter circuit is connected with the power amplifier tube, the second power supply and the rear-end equipment, so that the power amplifier tube outputs a signal after power amplification to the second Chebyshev filter circuit; when the second power supply supplies power, the second Chebyshev filter circuit matches the impedance of the collector with the impedance of the back-end equipment, and the signal after power amplification is output to the back-end equipment through the second Chebyshev filter circuit. To improve the performance of the power amplifier.)
1. A wideband power amplifier based on a gallium nitride fusion filtering function, the power amplifier comprising: the power amplifier comprises a first Chebyshev filter circuit, a power amplifier tube and a second Chebyshev filter circuit;
the input end of the first Chebyshev filter circuit is connected with front-end equipment and used for receiving a signal to be processed transmitted by the front-end equipment;
the power supply end of the first Chebyshev filter circuit is connected with a first power supply and is used for acquiring direct current provided by the first power supply;
the output end of the first Chebyshev filter circuit is connected with the base electrode of the power amplification tube, and is used for matching the impedance of the front-stage equipment with the impedance of the base electrode of the power amplification tube when the power amplification tube is electrified and transmitting the signal to be processed to the power amplification tube through the base electrode;
the power amplifier tube is used for amplifying the power of the signal to be processed input by the base electrode;
the collector of the power amplifier tube is connected with the input end of a second Chebyshev filter circuit and used for outputting a signal after power amplification to the second Chebyshev filter circuit;
the power supply end of the second Chebyshev filter circuit is connected with a second power supply and is used for acquiring direct current provided by the second power supply;
the second Chebyshev filter circuit is used for matching the impedance of the collector with the impedance of a rear-end device connected with the output end of the second Chebyshev filter circuit when the power supply is powered on, and outputting the power amplified signal to the rear-end device through the output end of the second Chebyshev filter circuit.
2. The power amplifier of claim 1, further comprising: a stabilization circuit;
one end of the stabilizing circuit is connected with the first Chebyshev filter circuit, and the other end of the stabilizing circuit is connected with the base electrode of the power amplifier tube, so that the power amplifier tube is prevented from being burnt by a circuit in the power amplifier.
3. The power amplifier of claim 2, wherein the stabilization circuit comprises: a first capacitor and a resistor;
one end of the first capacitor and one end of the resistor are connected with the output end of the first Chebyshev filter circuit in parallel;
the other end of the first capacitor and the other end of the resistor are connected in parallel with the base electrode of the power amplification tube.
4. The power amplifier of claim 1, further comprising: an input bias circuit;
one end of the input bias circuit is connected with the first power supply, and the other end of the input bias circuit is connected with the first Chebyshev filter circuit, and the input bias circuit is used for transmitting direct current provided by the first power supply to the first Chebyshev filter circuit and preventing the signal to be processed from being transmitted to the first power supply.
5. The power amplifier of claim 1, wherein the input bias circuit comprises: the first capacitor, the second capacitor, the third capacitor, the fourth capacitor, the first microstrip line and the first inductor are connected in series;
one end of the first microstrip line is connected with the first power supply, and the other end of the first microstrip line is connected with one end of the first inductor; the other end of the first inductor is connected with the first Chebyshev filter circuit;
one end of the second capacitor, one end of the third capacitor and one end of the fourth capacitor are respectively connected to the first microstrip line in a bypassing manner;
the other end of the second capacitor, the other end of the third capacitor and the other end of the fourth capacitor are grounded respectively.
6. The power amplifier of claim 1, further comprising: an output bias circuit;
one end of the output bias circuit is connected with the second power supply, and the other end of the output bias circuit is connected with the second Chebyshev filter circuit, and is used for transmitting the direct current provided by the second power supply to the second Chebyshev filter circuit and preventing the signal after power amplification from being transmitted to the second power supply.
7. The power amplifier of claim 1, wherein the output bias circuit comprises: the first capacitor, the second capacitor, the seventh capacitor, the second microstrip line and the second inductor are connected in series;
one end of the second microstrip line is connected with the second power supply, and the other end of the second microstrip line is connected with one end of the second inductor; the other end of the second inductor is connected with the second Chebyshev filter circuit;
one end of the fifth capacitor, one end of the sixth capacitor and one end of the seventh capacitor are respectively connected to the second microstrip line in a bypassing manner;
the other end of the fifth capacitor, the other end of the sixth capacitor and the other end of the seventh capacitor are grounded respectively.
8. The power amplifier of claim 1, wherein the first chebyshev filter circuit comprises: a third microstrip line, a fourth microstrip line, a fifth microstrip line, a sixth microstrip line, a seventh microstrip line, an eighth microstrip line, a ninth microstrip line, an eighth capacitor, a ninth capacitor and a tenth capacitor;
one end of the third microstrip line is connected with the front-end equipment, and the other end of the third microstrip line is respectively connected with one end of the fourth microstrip line and one end of the fifth microstrip line; the other end of the fourth microstrip line is grounded;
one end of the eighth capacitor is connected with the other end of the fifth microstrip line, and the other end of the eighth capacitor is connected with one end of the sixth microstrip line; the other end of the sixth microstrip line is respectively connected with the first power supply, one end of the eighth microstrip line and one end of the ninth capacitor;
one end of the seventh microstrip line is connected with the other end of the ninth capacitor, and the other end of the seventh microstrip line is grounded;
the other end of the eighth microstrip line is connected with the base electrode and one end of the tenth capacitor respectively;
the other end of the tenth capacitor is connected with one end of the ninth microstrip line, and the other end of the ninth microstrip line is grounded.
9. The power amplifier of claim 1, wherein the second chebyshev filter circuit comprises: a tenth microstrip line, an eleventh microstrip line, a twelfth microstrip line, a thirteenth microstrip line, a fourteenth microstrip line, a fifteenth microstrip line, an eleventh capacitor, a twelfth capacitor and a thirteenth capacitor;
one end of the tenth microstrip line is connected with the collector, and the other end of the tenth microstrip line is respectively connected with the second power supply, one end of the eleventh capacitor and one end of the twelfth microstrip line;
one end of the eleventh microstrip line is connected with the other end of the eleventh capacitor, and the other end of the eleventh microstrip line is grounded;
one end of the thirteenth microstrip line is connected with the other end of the twelfth microstrip line, and the other end of the thirteenth microstrip line is respectively connected with one end of the fourteenth microstrip line and one end of the twelfth capacitor;
one end of the fifteenth microstrip line is connected with the other end of the twelfth capacitor, and the other end of the fifteenth microstrip line is grounded;
one end of the thirteenth capacitor is connected with the other end of the fourteenth microstrip line, and the other end of the thirteenth capacitor is the output end of the second Chebyshev filter circuit.
10. A radio frequency system, characterized in that the radio frequency system comprises at least a wideband power amplifier based on a gallium nitride fusion filtering function according to any one of claims 1 to 9.
Technical Field
The invention relates to the technical field of electricity, in particular to a broadband power amplifier and a radio frequency system based on a gallium nitride fusion filtering function.
Background
Currently, with the rapid increase of communication demands and the increasing diversification of communication function demands, the demand for channel capacity of a mobile communication network is also higher and higher. For this reason, communication standards have been changed from 2G to 5G, and with the development of 5G mobile communication systems, the requirements of high rate and large capacity of 5G communication are met, and radio frequency systems are required to simultaneously support multiple frequency bands or cover as wide a frequency band range as possible in terms of frequency band support. In this regard, the entire mobile communication industry has begun to explore new frequency bands. For example, the frequency bands of radio frequency systems are designed to be around 2.6GHz, 3.5GHz, and 4.9 GHz.
In order to enable a radio frequency system to support a frequency band range as wide as possible, a wideband filter is designed jointly with a power amplifier as an input/output matching network in the related art, but the performance of the power amplifier is greatly reduced because the impedance of the input end of the filter cannot be matched with the impedance of the power amplifier.
Disclosure of Invention
The embodiment of the invention aims to provide a broadband power amplifier and a radio frequency system based on a gallium nitride fusion filtering function so as to improve the performance of the power amplifier. The specific technical scheme is as follows:
in a first aspect, an embodiment of the present invention provides a wideband power amplifier with a fusion filtering function based on gallium nitride, where the power amplifier includes: the power amplifier comprises a first Chebyshev filter circuit, a power amplifier tube and a second Chebyshev filter circuit;
the input end of the first Chebyshev filter circuit is connected with the front-end equipment and is used for receiving a signal to be processed transmitted by the front-end equipment;
the power supply end of the first Chebyshev filter circuit is connected with a first power supply and used for acquiring direct current provided by the first power supply;
the output end of the first Chebyshev filter circuit is connected with the base electrode of the power amplification tube and is used for matching the impedance of the front-stage equipment with the impedance of the base electrode of the power amplification tube when the power amplification tube is electrified and transmitting a signal to be processed to the power amplification tube through the base electrode;
the power amplifier tube is used for amplifying the power of a signal to be processed input by the base electrode;
the collector of the power amplifier tube is connected with the input end of the second Chebyshev filter circuit and used for outputting the signal after power amplification to the second Chebyshev filter circuit;
the power supply end of the second Chebyshev filter circuit is connected with a second power supply and used for acquiring direct current provided by the second power supply;
the second Chebyshev filter circuit is used for matching the impedance of the collector with the impedance of the rear-end equipment connected with the output end of the second Chebyshev filter circuit when the power supply is powered on, and outputting the signal after power amplification to the rear-end equipment through the output end of the second Chebyshev filter circuit.
Optionally, the power amplifier further includes: a stabilization circuit;
one end of the stabilizing circuit is connected with the first Chebyshev filter circuit, and the other end of the stabilizing circuit is connected with the base electrode of the power amplifier tube, so that the power amplifier tube is prevented from being burnt by self-excitation of a circuit in the power amplifier.
Optionally, the stabilizing circuit includes: a first capacitor and a resistor;
one end of the first capacitor and one end of the resistor are connected with the output end of the first Chebyshev filter circuit in parallel;
the other end of the first capacitor and the other end of the resistor are connected in parallel with the base electrode of the power amplification tube.
Optionally, the power amplifier further includes: an input bias circuit;
one end of the input bias circuit is connected with the first power supply, and the other end of the input bias circuit is connected with the first Chebyshev filter circuit, and the input bias circuit is used for transmitting direct current provided by the first power supply to the first Chebyshev filter circuit and preventing a signal to be processed from being transmitted to the first power supply.
Optionally, the input bias circuit includes: the first capacitor, the second capacitor, the third capacitor, the fourth capacitor, the first microstrip line and the first inductor are connected in series;
one end of the first microstrip line is connected with the first power supply, and the other end of the first microstrip line is connected with one end of the first inductor; the other end of the first inductor is connected with the first Chebyshev filter circuit;
one end of the second capacitor, one end of the third capacitor and one end of the fourth capacitor are respectively connected to the first microstrip line in a bypassing manner;
the other end of the second capacitor, the other end of the third capacitor and the other end of the fourth capacitor are respectively grounded.
Optionally, the power amplifier further includes: an output bias circuit;
one end of the output bias circuit is connected with the second power supply, and the other end of the output bias circuit is connected with the second Chebyshev filter circuit, and the output bias circuit is used for transmitting direct current provided by the second power supply to the second Chebyshev filter circuit and preventing signals after power amplification from being transmitted to the second power supply.
Optionally, the output bias circuit includes: the first capacitor, the second capacitor, the seventh capacitor, the second microstrip line and the second inductor are connected in series;
one end of the second microstrip line is connected with the second power supply, and the other end of the second microstrip line is connected with one end of the second inductor; the other end of the second inductor is connected with a second Chebyshev filter circuit;
one end of a fifth capacitor, one end of a sixth capacitor and one end of a seventh capacitor are respectively connected to the second microstrip line in a bypassing manner;
the other end of the fifth capacitor, the other end of the sixth capacitor and the other end of the seventh capacitor are respectively grounded.
Optionally, the first chebyshev filter circuit includes: a third microstrip line, a fourth microstrip line, a fifth microstrip line, a sixth microstrip line, a seventh microstrip line, an eighth microstrip line, a ninth microstrip line, an eighth capacitor, a ninth capacitor and a tenth capacitor;
one end of the third microstrip line is connected with the front-end equipment, and the other end of the third microstrip line is respectively connected with one end of the fourth microstrip line and one end of the fifth microstrip line; the other end of the fourth microstrip line is grounded;
one end of the eighth capacitor is connected with the other end of the fifth microstrip line, and the other end of the eighth capacitor is connected with one end of the sixth microstrip line; the other end of the sixth microstrip line is respectively connected with one end of the first power supply, one end of the eighth microstrip line and one end of the ninth capacitor;
one end of the seventh microstrip line is connected with the other end of the ninth capacitor, and the other end of the seventh microstrip line is grounded;
the other end of the eighth microstrip line is respectively connected with the base electrode and one end of the tenth capacitor;
the other end of the tenth capacitor is connected with one end of the ninth microstrip line, and the other end of the ninth microstrip line is grounded.
Optionally, the second chebyshev filter circuit includes: a tenth microstrip line, an eleventh microstrip line, a twelfth microstrip line, a thirteenth microstrip line, a fourteenth microstrip line, a fifteenth microstrip line, an eleventh capacitor, a twelfth capacitor and a thirteenth capacitor;
one end of the tenth microstrip line is connected with the collector, and the other end of the tenth microstrip line is respectively connected with the second power supply, one end of the eleventh capacitor and one end of the twelfth microstrip line;
one end of the eleventh microstrip line is connected with the other end of the eleventh capacitor, and the other end of the eleventh microstrip line is grounded;
one end of a thirteenth microstrip line is connected with the other end of the twelfth microstrip line, and the other end of the thirteenth microstrip line is respectively connected with one end of the fourteenth microstrip line and one end of the twelfth capacitor;
one end of the fifteenth microstrip line is connected with the other end of the twelfth capacitor, and the other end of the fifteenth microstrip line is grounded;
one end of the thirteenth capacitor is connected with the other end of the fourteenth microstrip line, and the other end of the thirteenth capacitor is the output end of the second Chebyshev filter circuit.
In a second aspect, an embodiment of the present invention further provides a radio frequency system, where the radio frequency system at least includes the wideband power amplifier based on the gallium nitride fusion filtering function described in any of the above embodiments.
The embodiment of the invention has the following beneficial effects:
the broadband power amplifier and the radio frequency system based on the gallium nitride fusion filtering function provided by the embodiment of the invention can comprise: the power amplifier comprises a first Chebyshev filter circuit, a power amplifier tube and a second Chebyshev filter circuit; the first Chebyshev filter circuit is connected with the front-end equipment, the first power supply and the base electrode of the power amplification tube, so that the first Chebyshev filter circuit can receive a signal to be processed transmitted by the front-end equipment, match the impedance of the front-end equipment with the impedance of the base electrode of the power amplification tube when the first power supply supplies power, and transmit the signal to be processed to the power amplification tube through the base electrode; the power amplifier tube amplifies the power of the signal to be processed; the second Chebyshev filter circuit is connected with the collector of the power amplifier tube, the second power supply and the rear-end equipment, so that the power amplifier tube can output a signal after power amplification to the second Chebyshev filter circuit; and when the second power supply supplies power, the second Chebyshev filter circuit can match the impedance of the collector with the impedance of the back-end equipment, and output the power amplified signal to the back-end equipment through the output end of the second Chebyshev filter circuit.
By using the first Chebyshev filter circuit and the second Chebyshev filter circuit, the impedance of the front-end equipment connected with the power amplifier can be matched with the impedance of the base electrode of the power amplifier tube, and the impedance of the rear-end equipment connected with the power amplifier can be matched with the impedance of the collector electrode of the power amplifier tube, so that the influence of impedance mismatching on signal power is reduced, the loss of the signal power in the transmission process is reduced, and the performance of the power amplifier can be improved. Of course, not all of the advantages described above need to be achieved at the same time in the practice of any one product or method of the invention.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
Fig. 1 is a schematic structural diagram of a first implementation of a wideband power amplifier based on a gallium nitride fusion filtering function according to an embodiment of the present invention;
fig. 2 is a schematic structural diagram of a second implementation of a wideband power amplifier based on a gallium nitride fusion filtering function according to an embodiment of the present invention;
fig. 3 is a schematic structural diagram of a third implementation of a wideband power amplifier based on a gallium nitride fusion filtering function according to an embodiment of the present invention;
fig. 4 is a schematic structural diagram of a fourth implementation of a wideband power amplifier based on a gallium nitride fusion filtering function according to an embodiment of the present invention;
fig. 5 is a schematic structural diagram of a fifth implementation of a wideband power amplifier based on a gallium nitride fusion filtering function according to an embodiment of the present invention;
fig. 6 is a schematic structural diagram of a sixth implementation of a wideband power amplifier based on a gallium nitride fusion filtering function according to an embodiment of the present invention;
fig. 7 is a schematic plane structure diagram of a wideband power amplifier based on a gallium nitride fusion filtering function according to an embodiment of the present invention.
FIG. 8 is a diagram illustrating simulation results of gain and power added efficiency of the wide band power amplifier based on the gallium nitride fusion filtering function shown in FIG. 7 in the frequency range of 1.5GHz to 6 GHz;
FIG. 9 is a diagram illustrating simulation results of the gain of the wide band power amplifier based on the gallium nitride fusion filtering function shown in FIG. 7 in the range of output power from 31dBm to 42 dBm;
fig. 10 is a diagram showing simulation results of power added efficiency of the wide band power amplifier based on the gallium nitride fusion filter function shown in fig. 7 in the range of output power of 31dBm to 42 dBm.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the prior art, the performance of the power amplifier is greatly reduced because the impedance of the input end of the filter cannot be matched with the impedance of the power amplifier. Therefore, in order to solve the problems in the prior art, embodiments of the present invention provide a wideband power amplifier and a radio frequency system based on a gallium nitride fusion filtering function, so as to improve the performance of the power amplifier.
First, a wideband power amplifier with a fusion filtering function based on gallium nitride according to an embodiment of the present invention is described below, as shown in fig. 1, which is a schematic structural diagram of a first implementation manner of the wideband power amplifier with a fusion filtering function based on gallium nitride according to an embodiment of the present invention, where the wideband power amplifier may include: a first
the input end of the first
the power supply end of the first
the output end of the first
the
a collector of the
the power supply end of the second
the second
According to the broadband power amplifier based on the gallium nitride fusion filtering function, the impedance of the front-end device connected with the power amplifier can be matched with the impedance of the base electrode of the power amplifier tube by using the first Chebyshev filter circuit and the second Chebyshev filter circuit, the impedance of the rear-end device connected with the power amplifier can be matched with the impedance of the collector electrode of the power amplifier tube, the influence of impedance mismatching on signal power is reduced, the loss of the signal power in the transmission process is reduced, and the performance of the power amplifier can be improved.
In some examples, a self-excited effect may be generated in a circuit of a power amplifier, so that a power amplifier tube is easily burned out, and in order to avoid burning out the power amplifier tube due to self-excitation of the circuit in the power amplifier, on the basis of the wideband power amplifier based on a gallium nitride fusion filtering function shown in fig. 1, an embodiment of the present invention further provides a possible implementation manner, as shown in fig. 2, which is a schematic structural diagram of a second implementation manner of the wideband power amplifier based on a gallium nitride fusion filtering function according to the embodiment of the present invention, and the power amplifier may further include: a
one end of the stabilizing
In some examples, as shown in fig. 2, the
one end of the first capacitor 141 and one end of the resistor 142 are connected in parallel with the output end of the first
the other end of the first capacitor 141 and the other end of the resistor 142 are connected in parallel to the base of the
In some examples, the power amplifier according to the embodiment of the present invention may affect the first power supply, so as to affect the power supplied by the first power supply to the first chebyshev, for this reason, on the basis of the wideband power amplifier based on the gallium nitride based fusion filtering function shown in fig. 2, the embodiment of the present invention further provides a possible implementation manner, as shown in fig. 3, which is a schematic structural diagram of a third implementation manner of the wideband power amplifier based on the gallium nitride based fusion filtering function according to the embodiment of the present invention, and the power amplifier may further include: an
one end of the
In some examples, embodiments of the present invention further provide a structure diagram of the
one end of the
one end of the
the other end of the
In some examples, the power amplifier according to the embodiment of the present invention may affect the second power supply, so as to affect the power supplied by the second power supply to the second chebyshev, for this, on the basis of the wideband power amplifier based on the gallium nitride based fusion filtering function shown in fig. 3, the embodiment of the present invention further provides a possible implementation manner, as shown in fig. 4, which is a schematic structural diagram of a fourth implementation manner of the wideband power amplifier based on the gallium nitride based fusion filtering function according to the embodiment of the present invention, and the power amplifier may further include: an
one end of the
In some examples, embodiments of the present invention further provide a structure diagram of the
one end of the
one end of the
the other terminal of the
On the basis of the wideband power amplifier based on the gallium nitride fusion filtering function shown in fig. 4, an embodiment of the present invention further provides a structure diagram of the first
one end of the
one end of an
one end of the
the other end of the eighth microstrip line 106 is connected to the base and one end of the
the other end of the
On the basis of the wideband power amplifier based on the gallium nitride fusion filtering function shown in fig. 5, an embodiment of the present invention further provides a structure diagram of a second
one end of the
one end of the eleventh microstrip line 132 is connected to the other end of the
one end of a
one end of the
one end of the
In order to more clearly illustrate the wideband power amplifier based on the gallium nitride fusion filtering function according to the embodiment of the present invention, the center frequency is 3.8GHz, and the operating frequency band is distributed between 2.3GHz and 5.2GHz, and the description is made with reference to fig. 7, as shown in fig. 7, which is a schematic plan structure diagram of the wideband power amplifier based on the gallium nitride fusion filtering function according to the embodiment of the present invention. In fig. 7, the method includes: a first
As shown in fig. 7, the first
one end of the
in some examples, one end of the
In still other examples, a first connecting
In still other examples, the front-end device is a device for transmitting a signal to be processed to the wideband power amplifier based on the gallium nitride fused filter function of the embodiment of the present invention, for example, the device may be a transmission line connected to the SMA connector, and the impedance of the transmission line is 50 Ω.
In fig. 7, the
In some examples, as shown in fig. 7, a first ground hole 771 is disposed on the dielectric substrate, and the position of the first ground hole 771 is matched with the position of the endpoint at the other end of the
As shown in fig. 7, one end of an
one end of the
the other end of the
the other end of the
In the embodiment of the present invention, the
In fig. 7, the width W of the
Width W of the
In some examples, as shown in fig. 7, a
The position of the
In still other examples, the diameters of the first ground hole 771, the
As shown in fig. 7, the input bias circuit 720 includes: a
one end of the
one end of the
the other end of the
In fig. 7, the width W of the
The
It should be noted that the positions of the
In some examples, as shown in fig. 7, a
the position of the
The position of the
The position of the
In still other examples, a microstrip line may be disposed at the positions of the
In still other examples, the diameters of the
In some examples, one end of the
As shown in fig. 7, the stabilizing
one end of the
the other end of the
In some examples,
In still other examples, the
As shown in fig. 7, the second
one end of the
one end of an
one end of a
one end of the
one end of the
In an embodiment of the present invention, the
In fig. 7, a width W of the
In some examples, as shown in fig. 7, a
the position of the
The position of the
In still other examples, the diameters of the
In still other examples, the output of the second
In still other examples, a second connecting
The SMA connector may be connected to a backend device to output a power amplified signal to the backend device.
In some examples, the backend device may be a destination device of the wideband power amplifier based on the gallium nitride fusion filtering function of the embodiment of the present invention, which outputs a power-amplified signal, for example, the backend device may be an antenna.
As shown in fig. 7, the output bias circuit 760 may include: a
one end of the
one end of the
the other end of the
In fig. 7, the width W of the
The capacitance values of the
It should be noted that the positions of the
In some examples, as shown in fig. 7, a
the position of the
The position of the
The position of the
In still other examples, the diameters of the
In still other examples, another microstrip line may be disposed at the positions of the
In some examples, one end of the
In order to more clearly illustrate the effect of the wideband power amplifier based on the gallium nitride fusion filtering function according to the embodiment of the present invention, the wideband power amplifier based on the gallium nitride fusion filtering function shown in fig. 7 is subjected to simulation analysis, as shown in fig. 8, which is a schematic diagram of the simulation result of the gain and the power added efficiency of the wideband power amplifier based on the gallium nitride fusion filtering function shown in fig. 7 in the frequency range of 1.5GHz to 6GHz, as can be seen from the left axis of fig. 8, when the input port is excited, the frequency range of which the gain is greater than 9dB is 2.3GHz to 5.2GHz, the relative bandwidth reaches 77.33%, the fluctuation of the gain in the passband range is within ± 0.43dB, and the gain outside the passband is reduced to-10 dB. Referring to the right axis of fig. 8, it can be seen that the power added efficiency is greater than 45.5% up to 54.5% in the passband 2.3GHz to 5.2GHz, while the power added efficiency is almost 0% outside the passband. Compared with the traditional broadband power amplifier, the broadband power amplifier based on the gallium nitride and having the fusion filtering function has better broadband performance and more stable gain, and has an out-of-band filtering function.
As shown in fig. 9 and 10, the results of the simulation of the gain of the wide-band power amplifier based on the gallium nitride fusion filter function shown in fig. 7 in the range of output power of 31dBm to 42dBm and the results of the simulation of the power added efficiency are shown. As can be seen from fig. 9 and 10, the power added efficiencies of 2.6GHz, 3.5GHz, and 4.9GHz are all greater than 50% at a saturated output power of 40 dBm. The experimental data can well reflect various performances of the broadband power amplifier based on the gallium nitride fusion filtering function, can cover a wider frequency range, fuses the performances of the band-pass filter, and has wide application scenes.
The size of the whole circuit is 10.59cm multiplied by 3.61cm, and is much smaller than the size of the power amplifier and the filter of two independent radio frequency devices in the traditional radio frequency system, which shows that the filter is fused into the power amplifier, and the remarkable effect can be achieved in the aspect of miniaturization of the radio frequency system.
According to the broadband power amplifier with the gallium nitride-based fusion filtering function, disclosed by the embodiment of the invention, the power amplifier can simultaneously have the functions of power amplification and filtering by respectively introducing a Chebyshev band-pass filtering structure as an input/output matching circuit at the input/output end of the power amplifier tube. And by selecting a proper line width, the power amplifier can have broadband performance in an operating frequency band. The center frequency of the embodiment of the invention is 3.8GHz, the working frequency band is distributed between 2.3GHz and 5.2GHz, the full coverage of the 5G main working frequency band can be realized, and the invention can be widely applied to a 5G communication system. Furthermore, the broadband power amplifier based on the gallium nitride and integrated with the filtering function has a simple structure, so that the broadband power amplifier is easy to design and convenient to process and manufacture; the circuit structure is planar, and can be processed by adopting a single-layer circuit board.
The embodiment of the invention also provides a radio frequency system which can comprise the broadband power amplifier based on the gallium nitride fusion filtering function shown in any one of the embodiments.
In the above embodiments, the implementation may be wholly or partially realized by software, hardware, firmware, or any combination thereof. When implemented in software, may be implemented in whole or in part in the form of a computer program product. The computer program product includes one or more computer instructions. When loaded and executed on a computer, cause the processes or functions described in accordance with the embodiments of the invention to occur, in whole or in part. The computer may be a general purpose computer, a special purpose computer, a network of computers, or other programmable device. The computer instructions may be stored in a computer readable storage medium or transmitted from one computer readable storage medium to another, for example, from one website site, computer, server, or data center to another website site, computer, server, or data center via wired (e.g., coaxial cable, fiber optic, Digital Subscriber Line (DSL)) or wireless (e.g., infrared, wireless, microwave, etc.). The computer-readable storage medium can be any available medium that can be accessed by a computer or a data storage device, such as a server, a data center, etc., that incorporates one or more of the available media. The usable medium may be a magnetic medium (e.g., floppy Disk, hard Disk, magnetic tape), an optical medium (e.g., DVD), or a semiconductor medium (e.g., Solid State Disk (SSD)), among others.
It is noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other identical elements in a process, method, article, or apparatus that comprises the element.
All the embodiments in the present specification are described in a related manner, and the same and similar parts among the embodiments may be referred to each other, and each embodiment focuses on the differences from the other embodiments. In particular, for the system embodiment, since it is substantially similar to the method embodiment, the description is simple, and for the relevant points, reference may be made to the partial description of the method embodiment.
The above description is only for the preferred embodiment of the present invention, and is not intended to limit the scope of the present invention. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention shall fall within the protection scope of the present invention.
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