阅读说明：本技术 电极装置、半导体装置和半导体系统 (Electrode device, semiconductor device, and semiconductor system ) 是由 满上拓弥 荒木雅宏 于 2020-04-16 设计创作，主要内容包括：本发明提供一种能够精确检测待检测对象的电极装置、半导体装置和半导体系统。根据一个实施例,电极装置11被用于检测互电电容系统的电容,并且包括接收电极PR1、面对接收电极PR1布置的发射电极PX1、面对接收电极PR1布置的发射电极PX2,使发射电极PX1介于发射电极PX2和接收电极PR1之间、以及电介质板101,设置在发射电极PX1和发射电极PX2之间以用于固定发射电极PX1和发射电极PX2之间的距离和介电常数。(The invention provides an electrode device, a semiconductor device and a semiconductor system capable of accurately detecting an object to be detected. According to one embodiment, the electrode arrangement 11 is used for detecting the capacitance of a mutual capacitance system, and includes a receiving electrode PR1, a transmitting electrode PX1 arranged facing the receiving electrode PR1, a transmitting electrode PX2 arranged facing the receiving electrode PR1 with the transmitting electrode PX1 interposed between the transmitting electrode PX2 and the receiving electrode PR1, and a dielectric plate 101 disposed between the transmitting electrode PX1 and the transmitting electrode PX2 for fixing the distance and the dielectric constant between the transmitting electrode PX1 and the transmitting electrode PX 2.)

1. An electrode arrangement for capacitive sensing of mutual capacitance type, comprising:

a receiving electrode;

a first transmitting electrode disposed opposite to the receiving electrode;

a second transmitting electrode disposed opposite to the receiving electrode with the first transmitting electrode interposed therebetween; and

a dielectric substrate disposed between the first and second transmitting electrodes and configured to fix a distance and a dielectric constant between the first and second transmitting electrodes.

2. The electrode device according to claim 1, wherein a space region in which an object to be detected can be inserted is formed between the first transmitting electrode and the receiving electrode.

3. The electrode device according to claim 2, wherein it is determined whether the object to be detected is interposed between the first transmitting electrode and the receiving electrode based on a calculation result of capacitance between the first transmitting electrode and the receiving electrode; the calculation result is calculated by using a first consumption current value when a first electric field is generated between the first transmission electrode and the reception electrode and a second consumption current value when a second electric field is generated between the second transmission electrode and the reception electrode.

4. The electrode device according to claim 2, wherein the object to be detected is paper.

5. The electrode device according to claim 1, wherein it is determined whether there is a contact of an object to be detected that causes a change in the distance between the first transmission electrode and the reception electrode based on the calculation result of the capacitance; the calculation result is calculated by using a first consumption current value at the time of generating a first electric field between the first transmission electrode and the reception electrode and a second consumption current value at the time of generating a second electric field between the second transmission electrode and the reception electrode.

6. The device of claim 1, wherein the dielectric substrate is a glass epoxy substrate.

7. A semiconductor device, comprising:

an electrode device, comprising:

a receiving electrode;

a first transmitting electrode disposed facing the receiving electrode;

a second transmitting electrode disposed facing the receiving electrode with the first transmitting electrode interposed therebetween; and

a dielectric substrate for fixing a distance and a dielectric constant between the first emitter electrode and the second emitter electrode, the dielectric substrate being disposed between the first emitter electrode and the second emitter electrode,

A pulse signal output circuit configured to selectively output a pulse signal to any one of the first transmission electrode and the second transmission electrode,

a capacitance detection circuit that calculates a change in capacitance between the first transmission electrode and the reception electrode based on a first consumption current consumed by the reception electrode when the pulse signal is applied to the first transmission electrode and a second consumption current consumed by the reception electrode when the pulse signal is applied only to the second transmission electrode; and

an arithmetic processing unit that determines whether or not a detected object is set on the electrode device based on a detection result of the capacitance detection circuit.

8. The semiconductor device as set forth in claim 7,

wherein a space region in which an object to be detected can be inserted is formed between the first transmitting electrode and the receiving electrode; and

wherein the arithmetic processing unit determines whether the object is interposed between the first transmitting electrode and the receiving electrode based on a detection result obtained by the capacitance detection circuit.

9. The semiconductor device according to claim 7, wherein the arithmetic processing unit determines whether the object is touched, which causes a change in distance between the first transmission electrode and the reception electrode, based on a detection result obtained by the capacitance detection circuit.

10. The semiconductor device according to claim 7, wherein the pulse signal output circuit is configured to set the first transmission electrode to a high-impedance state when the pulse signal is output to the second transmission electrode.

11. The semiconductor device according to claim 7, wherein the pulse signal output circuit is configured to set the second transmission electrode to a high-impedance state when the pulse signal is output to the first transmission electrode.

12. The semiconductor device according to claim 7, wherein the pulse signal output circuit is configured to output the pulse signal to the second transmission electrode in addition to the first transmission electrode when the pulse signal is output to the first transmission electrode.

13. The semiconductor device as set forth in claim 7,

wherein the pulse signal output circuit is configured to output the pulse signal according to a first clock signal,

wherein the capacitance detection circuit comprises:

a constant voltage generation circuit for generating a constant voltage;

a switching circuit for switching between applying the constant voltage to the receiving electrode and discharging accumulated charges in the receiving electrode based on the first clock signal;

A current-controlled oscillation circuit for generating a second clock signal having a frequency according to a current flowing from the constant voltage generation circuit to the switching circuit when the constant voltage is applied to the reception electrode; and

a counter for counting the number of oscillations per predetermined period of the second clock signal, an

Wherein the arithmetic processing unit is configured to determine whether the object is set on the electrode device based on a count value of the counter.

14. A semiconductor system, comprising:

an electrode arrangement; and

a semiconductor device is provided with a semiconductor substrate,

wherein the electrode device comprises:

a receiving electrode;

a first transmitting electrode disposed opposite to the receiving electrode;

a second transmitting electrode disposed opposite to the receiving electrode with the first transmitting electrode interposed therebetween; and

a dielectric substrate for fixing a distance and a dielectric constant between the first and second transmission electrodes, wherein the semiconductor device includes:

a pulse signal output circuit for selectively outputting a pulse signal to any one of the first transmitting electrode and the second transmitting electrode;

A capacitance detection circuit for calculating a change in capacitance between the first transmission electrode and the reception electrode based on a first consumption current consumed in the reception electrode when the pulse signal is applied to the first transmission electrode and a second consumption current consumed in the reception electrode when the pulse signal is applied only to the second transmission electrode; and

an arithmetic processing unit for determining whether an object to be detected is set on the electrode device based on a detection result of the capacitance detection circuit.

15. The semiconductor system as set forth in claim 14,

wherein a space region in which the object to be detected can be inserted is formed between the first transmitting electrode and the receiving electrode, and

wherein the processing unit is configured to determine whether the object is interposed between the first transmitting electrode and the receiving electrode based on the detection result of the capacitance detection circuit.

16. The semiconductor system according to claim 14, wherein the arithmetic processing unit is configured to determine whether there is a contact to the object that causes a change in a distance between the first transmission electrode and the reception electrode based on a detection result of the capacitance detection circuit.

17. The semiconductor system of claim 14, wherein the pulse signal output circuit is configured to set the first transmitting electrode to a high impedance state when outputting the pulse signal to the second transmitting electrode.

18. The semiconductor system of claim 14, wherein the pulse signal output circuit is configured to set the second transmitting electrode to a high impedance state when outputting the pulse signal to the first transmitting electrode.

19. The semiconductor device according to claim 14, wherein the arithmetic processing unit is configured to determine a result of determination as to whether the object is set on the electrode device, and determine processing for the object based on the result of determination.

20. The semiconductor system of claim 19, further comprising:

a machine learning unit for machine learning a difference in a detection result of the capacitance detection circuit according to a type of the object; and

the arithmetic processing unit is configured to determine a process for the object according to the type of the object; predicting, by the machine learning unit, the processing according to a learning result.

Technical Field

The present invention relates to an electrode device, a semiconductor device, and a semiconductor system, and for example, the present invention relates to an electrode device, a semiconductor device, and a semiconductor system suitable for accurately detecting an object to be detected.

Background

In recent years, it is required to accurately detect whether an object to be detected (detection target object) such as paper is interposed between electrodes or a touch electrode is touched by the object to be detected such as a finger using a mutual capacitance type sensor. For example, patent document 1 discloses a structure of a mutual capacitance type touch sensor for detecting whether a touch electrode is touched by a finger. The disclosed techniques are listed below.

[ patent document 1]

Japanese unexamined patent application publication 2017-204900.

Disclosure of Invention

However, in the configuration of the related art, when the distance between the electrodes is unintentionally changed due to slight vibration or the like, an unintentional numerical fluctuation occurs regardless of the presence or absence of the object to be detected or when the object to be detected is detected, and there is a possibility of erroneous detection or occurrence of detection error. That is, in the configuration of the related art, it is still impossible to accurately detect the object to be detected. Other problems and novel features will become apparent from the description of the specification and drawings.

According to one embodiment, an electrode device used for mutual capacitance type capacitance detection includes: a receiving electrode; a first transmitting electrode disposed opposite to the receiving electrode; a second transmitting electrode disposed opposite to the receiving electrode with the first transmitting electrode interposed therebetween; and a dielectric substrate provided between the first and second transmitting electrodes for fixing a distance and a dielectric constant between the first and second transmitting electrodes.

According to one embodiment, a semiconductor device includes: a receiving electrode; a first transmitting electrode disposed opposite to the receiving electrode; a second transmitting electrode disposed opposite to the receiving electrode with the first transmitting electrode interposed therebetween; and a dielectric substrate provided between the first and second transmitting electrodes for fixing a distance and a dielectric constant between the first and second transmitting electrodes; a pulse signal output circuit for selectively outputting a pulse signal to any one of the first and second transmission electrodes of the electrode device; a capacitance detection circuit calculating a change in capacitance between the first transmission electrode and the reception electrode by using a current consumed in the reception electrode when the pulse signal is applied to the first transmission electrode and a current consumed in the reception electrode when the pulse signal is applied only to the second transmission electrode; and an arithmetic processing unit that determines whether the detection target object is set in the electrode device based on a detection result of the capacitance detection circuit.

According to one embodiment, a semiconductor system includes: an electrode device and a semiconductor device, wherein the electrode device includes: a receiving electrode; a first transmitting electrode disposed facing the receiving electrode; a second transmitting electrode disposed facing the receiving electrode with the first transmitting electrode interposed therebetween; and a dielectric substrate provided between the first and second transmitting electrodes to fix a distance and a dielectric constant between the first and second transmitting electrodes, and wherein the semiconductor device includes: a pulse signal output circuit for selectively outputting a pulse signal to any one of the first and second transmitting electrodes; a capacitance detection circuit that calculates an amount of change in capacitance between the first transmission electrode and the reception electrode using a current consumed in the reception electrode when the pulse signal is applied to the first transmission electrode and a current consumed in the reception electrode when the pulse signal is applied only to the second transmission electrode; and an arithmetic processing unit that determines whether or not an object to be detected is set on the electrode device based on a detection result of the capacitance detection circuit.

Effects of the invention

According to the above-described embodiments, it is possible to provide the electrode device, the semiconductor device, and the semiconductor system capable of detecting the object to be detected with high accuracy.

Drawings

Fig. 1 is a schematic sectional view showing an exemplary configuration of an electrode device according to a first embodiment.

Fig. 2 is a diagram showing an exemplary configuration of a semiconductor device including the electrode device shown in fig. 1.

Fig. 3 is a schematic sectional view showing an exemplary configuration of an electrode device according to a second embodiment.

Fig. 4 is a schematic sectional view showing a state where paper is inserted between electrodes of the electrode device shown in fig. 3.

Fig. 5 is a view showing an example of the configuration of a semiconductor system having the electrode device shown in fig. 3.

Fig. 6 is a schematic cross-sectional view showing a first modified example of the electrode device shown in fig. 3.

Fig. 7 is a schematic cross-sectional view showing a second modified example of the electrode device shown in fig. 3.

Fig. 8 is a diagram showing an application example of the semiconductor system according to the first embodiment.

Fig. 9 is a schematic sectional view showing a configuration example of an electrode device according to the concept before the first embodiment.

Fig. 10 is a schematic sectional view showing a state where paper is inserted between electrodes of the electrode device shown in fig. 9.

Fig. 11 is a diagram for explaining formation of capacitance between electrodes.

Detailed Description

The following description and drawings are omitted or simplified as appropriate for clarity of explanation. Further, the functional block elements described in the drawings for performing various processes may be configured as a CPU (central processing unit), a memory, and other circuits in terms of hardware, and may be implemented by a program loaded into the memory in terms of software. Accordingly, those skilled in the art will appreciate that these functional blocks may be implemented in various forms of hardware alone, software alone, or a combination thereof, and the present invention is not limited to any one of them. In the drawings, the same elements are denoted by the same reference numerals, and repeated description thereof is omitted as necessary.

Also, various types of non-transitory computer-readable media may be used to store and provide the above-described program to the computer. Non-transitory computer readable media include various types of tangible storage media. Examples of the non-transitory computer readable medium include a magnetic recording medium (e.g., a floppy disk, a magnetic tape, a hard disk drive), a magneto-optical recording medium (e.g., a magneto-optical disk), a CD-ROM (read only memory, CD-R, CD-R/W), a solid-state memory (e.g., a mask ROM, a PROM (programmable ROM), an EPROM (erasable PROM), a flash ROM, a RAM (random access memory)). The program may also be provided to the computer by various types of transitory computer-readable media. Examples of transitory computer readable media include electrical signals, optical signals, and electromagnetic waves. The transitory computer-readable medium may provide the program to the computer via a wired or wireless communication path (such as an electric wire and an optical fiber).

First, referring to fig. 9, an electrode device 60 studied in advance by the present inventors will be described. Fig. 9 is a schematic sectional view showing a configuration example of an electrode device according to the concept before the first embodiment.

The electrode device 60 is used to detect capacitance of a mutual capacitance type, and change the capacitance between electrodes by inserting an object to be detected (e.g., paper) between the electrodes. The sensor using the electrode device 60 detects whether an object to be detected (e.g., paper) is inserted between the electrodes based on a change in capacitance obtained from the electrode device 60. Hereinafter, a detailed description will be given.

As shown in fig. 9, the electrode device 60 includes an emitter electrode PX1, a receiver electrode PR1, and dielectric substrates 101 and 102.

Specifically, emitter electrode PX1 is disposed on the main surface of dielectric substrate 101. The receiving electrode PR1 is disposed on the main surface of the dielectric substrate 102 disposed facing the dielectric substrate 101 such that the receiving electrode PR1 faces the emitter electrode PX1 with a predetermined distance d therebetween. The dielectric substrates 101 and 102 are, for example, glass epoxy substrates. An electrostatic capacitance C1 is formed between the emitter electrode PX1 and the receiver electrode PR 1.

In fig. 9, a space region in which an object to be detected (such as paper) can be inserted is formed between the transmitting electrode PX1 and the receiving electrode PR 1. Hereinafter, a case where the object to be detected is a paper sheet (paper) P1 will be exemplified.

Fig. 10 is a schematic sectional view showing a state where a sheet of paper P1 is inserted between the electrodes PX1 and PR1 of the electrode device 60. As shown in fig. 10, if the thickness of the sheet is d1(< d), a sheet of paper P1 having a dielectric constant different from that of air is inserted instead of air in a region corresponding to the thickness d1 in the spatial region where the distance d between the electrodes PX1, PR1 is d.

Referring now to fig. 11, the capacitance of the capacitance C generated between the electrodes is generally expressed by the following equation (1). Where C is a capacitance value C of an electrostatic capacitance (capacitance, electrostatic capacitance, capacitance), d is an inter-electrode distance, k is a relative dielectric constant of an inter-electrode region, a is an electrode area, and 0 is an electrical constant.

C＝k×0×A/d···(1)

As can be seen from equation (1), the capacitance C is proportional to the electrode area a, proportional to the relative dielectric constant k of the inter-electrode region, and inversely proportional to the inter-electrode distance d.

Therefore, when the paper sheet P1 having a dielectric constant different from that of air is inserted between the electrodes, the capacitance value of the electrostatic capacitance C1 changes. The sensor using the electrode device 60 can detect whether the sheet P1 is inserted between the electrodes based on the amount of change in capacitance.

Here, assuming that the thickness of the sheet P1 is 90 μm, and the dielectric constant of the sheet P1 is twice that of air, the change in capacitance value of the capacitor C1 due to the insertion of the sheet P1 between the electrodes is equal to the change in capacitance value when the distance d between the electrodes is shortened by 45 μm. Therefore, if the distance d between the electrodes is unintentionally fluctuated by slight vibration or the like, the sensor using the electrode device 60 may erroneously detect that the paper sheet P1 has been inserted between the electrodes.

Therefore, the electrode device 11, the control device (semiconductor device) 12, and the sensor system (semiconductor system) SYS1 according to the first embodiment capable of solving such a problem have been found.

First embodiment

Fig. 1 is a schematic sectional view showing a configuration example of an electrode device 11 according to a first embodiment. The electrode device 11 is used to detect capacitance of a mutual capacitance type, and changes the capacitance between electrodes by inserting an object to be detected (such as paper) between the electrodes. Whether an object to be detected (e.g., paper) is inserted between the electrodes is detected based on a change in capacitance obtained from the electrode device 11 using a sensor (control device 12 described later) of the electrode device 11. Hereinafter, a detailed description will be given.

As shown in fig. 1, the electrode device 11 includes two emitter electrodes PX1 and PX2, a receiver electrode PR1, and dielectric substrates 101 and 102.

Specifically, the emitter electrode PX1 is disposed on one main surface of the dielectric substrate 101, and the emitter electrode PX2 is disposed on the other main surface of the dielectric substrate 101. The receiving electrode PR1 is disposed on the main surface of the dielectric substrate 102 facing the dielectric substrate 101 such that the receiving electrode PR1 faces the emitting electrode PX1 with a predetermined distance d therebetween, and the receiving electrode PR1 is disposed facing the emitting electrode PX2 with the emitting electrode PX1 and the dielectric substrate 101 interposed therebetween. The dielectric substrates 101 and 102 are, for example, glass epoxy substrates.

A capacitance C1 is formed between the emitter electrode PX1 and the receiver electrode PR 1. A capacitance C2 is formed between the emitter electrodes PX1 and PX 2.

In the embodiment shown in fig. 1, a space region in which an object to be detected (such as paper) can be inserted is formed between the transmitting electrode PX1 and the receiving electrode PR 1. Hereinafter, a case where the object to be detected is a sheet P1 will be exemplified.

On the other hand, a dielectric substrate 102 is provided between the emitter electrodes PX1 and PX 2. Therefore, the distance and the dielectric constant between the emitter electrodes PX1 and PX2 are fixed.

Method for calculating electrostatic capacitance C1

Next, a method of calculating the capacitance value of the electrostatic capacitance C1 of the electrode device 11 will be described. Here, the following case will be described: the capacitance value of the capacitance C1 of the electrode arrangement 11 is calculated by converting the capacitance value into the distance d between the transmitting electrode PX1 and the receiving electrode PR 1.

First, when the capacitance value of the capacitance C1 between the transmission electrode PX1 and the reception electrode PR1 is Ca, and the capacitance value between the transmission electrode PX2 and the reception electrode PR1 is Cb, the following equations (2) and (3) are established. However, when an electric field is generated between the electrodes PX1 and PR1 (i.e., when a voltage is applied between the electrodes PX1 and PR 1), the emitter electrode PX2 is set to HiZ (high impedance state). When an electric field is generated between the electrodes PX2 and PR1 (i.e., when a voltage is applied between the electrodes PX2 and PR 1), the emitter electrode PX1 is set to the HiZ state.

Equation 1

Equation 2

If I is a consumption current (a current value of a current I1 described later), F is an operating frequency (an oscillation frequency of a clock signal CLK1 described later), C is a capacitance value, and V is an inter-electrode voltage, I — FCV holds. Therefore, when an electric field is generated between the electrodes PX1 and PR1, the consumption current I1a is expressed by the following equation (4) from equation (2). When an electric field is generated between the electrodes PX2 and PR1, the consumption current I1b is represented by the following equation (5) from equation (3).

I1a＝F·C1·V···(4)

Equation 3

From equations (4) and (5), the following equation (6) holds.

Equation 4

When equation (6) is converted, it is expressed as equation (7).

Equation 5

Equation 6

I1a·C2＝I1b·(C1+C2)

I1a·C2＝I1b·C1+I1b·C2

(I1a-I1b)C2＝I1b·C1

Equation 7

Here, the first and second liquid crystal display panels are,

[ equation 8]

The distance d is expressed by the following formula (8). Here, 0 represents an electric constant, r represents a relative dielectric constant of an inter-electrode region, S represents an electrode area, and d represents an inter-electrode distance.

Equation 9

Equation 10

Equation 11

The distance d is expressed by the following equation (9) according to r being 1.

Equation 12

As understood from equation (9), the distance d can be calculated by measuring the current value I1a and the current value I1 b. From the change in the calculation result of the distance d, the change in the capacitance value of the electrostatic capacitance C1 becomes clear. That is, according to the change of the calculation result of the distance d, the change amount of the capacitance value of the electrostatic capacitance C1 that changes as the sheet P1 is inserted between the electrodes PX1 and PR1 can be obtained. Therefore, the sensor using the electrode device 11 can accurately detect whether the paper P1 is inserted between the electrodes PX1 and PR1 based on the calculation result of the distance d. According to the improvement of the detection accuracy, the material of the paper sheet P1 inserted between the electrodes PX1 and PR1 can also be determined using the sensor of the electrode device 11.

Description of a sensor system SYS1 with an electrode arrangement 11

Subsequently, fig. 2 is used to describe a sensor system with an electrode arrangement 11. Fig. 2 is a diagram showing an exemplary configuration of a sensor system (semiconductor system) SYS1 including the electrode device 11.

As shown in fig. 2, the sensor system SYS1 includes an electrode device 11 and a control device (semiconductor device) 12. The control device 12 is a so-called microcomputer, and has a function of a sensor for detecting whether or not the sheet P1 is inserted between the electrodes of the electrode device 11 based on a change in the electrostatic capacitance C1 detected from the electrode device 11. Further, the control device 12 may have a function of a sensor for specifying the material of the inserted sheet P1 based on the absolute capacitance value of the electrostatic capacitance C1 detected from the electrode device 11.

Specifically, the control device 12 includes a capacitance detection unit 13, an arithmetic processing unit (CPU)14, and terminals TX1, TX2, and TR 1. The capacitance detecting unit 13 includes a current mirror 15, a switching circuit 16, a current controlled oscillation circuit (CCO; current controlled oscillator) 17, a counter 18, buffers B1 and B2, and a smoothing capacitor Cs. The buffers B1 and B2 constitute a pulse signal output circuit. Among the components of the capacitance detection unit 13, the capacitance detection circuit is constituted by components other than the pulse signal output circuit.

The transmitting electrode PX2 of the electrode device 11 is connected to the terminal TX 1. The transmitting electrode PX1 of the electrode device 11 is connected to the terminal TX 2. The receiving electrode PR1 of the electrode arrangement 11 is connected to a terminal TR 1.

The power supply voltage falling circuit VDC includes a P-channel MOS transistor MP11 (hereinafter simply referred to as "transistor") and an amplifier AMP. In the transistor MP11, the source is connected to the power supply voltage terminal VDD, the drain is connected to the node NR, and the gate is applied with the output voltage of the amplifier AMP. The amplifier AMP amplifies the potential difference between the voltage VDDR of the node NR and the reference voltage Vref and applies the amplified voltage to the gate of the transistor MP 11. That is, the amplifier AMP controls the gate voltage of the transistor MP11 so that the voltage VDDR of the node NR is equal to the reference voltage Vref.

In the transistor MP12, the source is connected to the power supply voltage terminal VDD, and the output voltage of the amplifier AMP is applied to the gate. That is, the transistors MP11 and MP12 constitute a current mirror circuit. Therefore, the current I2 flowing between the source and the drain of the transistor MP12 is proportional to the current I1 flowing between the source and the drain of the transistor MP 11. The current driving capability (transistor size) of each of the transistors MP11 and MP12 can be set to an arbitrary value according to design specifications.

The switch circuit 16 has switching elements SW1 and SW 2. The switching element SW1 is provided between the node NR and the node NS, and is turned on and off based on the clock signal CLK 1. The switching element SW2 is provided between the node NS and the ground voltage terminal GND, and is turned on and off complementarily with the switching element SW1 based on the clock signal CLK 1. Node NS is connected to terminal TR 1.

For example, when the clock signal CLK1 is at the L (low) level, the switching element SW1 is turned on and the switching element SW2 is turned off. Therefore, the voltage VDDR of the node NR is applied to the terminal TR 1. That is, the voltage VDDR of the node NR is applied to the receiving electrode PR1 via the terminal TR 1. Accordingly, electric charges are accumulated in the receiving electrode PR 1.

On the other hand, when the clock signal CLK1 is at the H (high) level, the switching element SW1 is turned off, and the switching element SW2 is turned on. Therefore, the ground voltage (ground potential) GND is applied to the terminal TR 1. That is, the ground voltage GND is applied to the receiving electrode PR1 via the terminal TR 1. Accordingly, the electric charges accumulated in the receiving electrode PR1 are discharged.

That is, the switch circuit 16 generates a driving pulse DRV obtained by inverting the logic level of the clock signal CLK1, and applies the driving pulse DRV to the receiving electrode PR1 through the terminal TR 1.

The buffer B1 is a so-called three-state buffer, and switches as to whether the clock signal CLK1 is output as the pulse signal PS1 or the output is set to the HiZ state. The buffer B2 is a so-called tri-state buffer, and switches the output of the clock signal CLK1 to the pulse signal PS2 or switches the output of the buffer B2 to the HiZ state in a complementary manner to the output of the buffer B1.

For example, when the buffer B1 outputs the clock signal CLK1 as the pulse signal PS1, the output of the buffer B2 is set to the HiZ state. Accordingly, the pulse signal PS1 is applied to the emitter electrode PX 1. On the other hand, transmitting electrode PX2 is set to the HiZ state. At this time, the driving pulse DRV is applied to the receiving electrode PR 1. Accordingly, an electric field occurs between the transmitting electrode PX1 and the receiving electrode PR 1.

On the other hand, when the buffer B2 outputs the clock signal CLK1 as the pulse signal PS2, the output of the buffer B1 is set to the HiZ state. Accordingly, the pulse signal PS2 is applied to the emitter electrode PX 2. On the other hand, transmitting electrode PX1 is set to the HiZ state. At this time, the driving pulse DRV is applied to the receiving electrode PR 1. Accordingly, an electric field occurs between the transmitting electrode PX2 and the receiving electrode PR 1.

The current mirror circuit 15 includes a power supply voltage drop circuit (constant voltage generating circuit) VDC and a P-channel MOS transistor (hereinafter, simply referred to as a transistor) MP 12. The power supply voltage drop circuit VDC generates a voltage VDDR obtained by dropping the power supply voltage VDD at the node NR. The smoothing Capacitor Cs is provided between the node NR and the ground voltage terminal GND, and smoothes a charging current waveform generated by a Switched Capacitor Filter (Switched Capacitor Filter) of the switching circuit 16 according to the detected capacitance, and sends the smoothed charging current waveform to the current control oscillation circuit 17.

The current-controlled oscillation circuit 17 outputs a clock signal CLK2 whose frequency corresponds to the current I2 proportional to the current I1. The current control oscillation circuit 17 includes a ring oscillator and a buffer circuit. In the ring oscillator, a plurality of inverter circuits whose delay times vary with the current I2 are connected in a ring shape. The buffer circuit amplifies an output of the inverter circuit in a final stage of the plurality of inverter circuits and outputs the amplified output as the clock signal CLK 2. The counter 18 counts the number of oscillations of the clock signal CLK2 per predetermined period, and outputs a count value NC 2.

For example, as the value of the current I2 increases, the delay time of the inverter provided in the current-controlled oscillation circuit 17 decreases, so that the frequency of the clock signal CLK2 increases, and therefore, the count value NC2 increases. On the other hand, when the value of the current I2 decreases, the delay time of the inverter provided in the current-controlled oscillation circuit 17 increases, so that the frequency of the clock signal CLK2 decreases, with the result that the count value NC2 decreases.

The arithmetic processing unit 14 calculates the value of the current I1 based on the count value NC2 at this time. Specifically, the arithmetic processing unit 14 calculates the value of the current I1 when the electric field is generated between the electrodes PX1, PR1 (I1a), and calculates the value of the current I1 when the electric field is generated between the electrodes PX2, PR1 (I1 b). The arithmetic processing unit 14 calculates the distance d by substituting the calculation results of the current values I1a and I1b into equation (9) above. Here, from the change in the calculation result of the distance d, the change in the capacitance value of the electrostatic capacitance C1 becomes clear. Therefore, the arithmetic processing unit 14 can calculate the amount of change in the capacitance value of the electrostatic capacitance C1, which changes as the sheet P1 is inserted between the electrodes PX1 and PR1, from the amount of change in the calculation result of the distance d. That is, the arithmetic processing unit 14 can accurately detect whether the sheet P1 is inserted between the electrodes PX1 and PR1 according to the calculation result of the distance d. The arithmetic processing unit 14 may also determine the material of the sheet P1 inserted between the electrodes PX1 and PR1 from the calculation result of the distance d.

Sensor system SYS1 operation

Next, the operation of the sensor system SYS1 is explained.

First, the sensor system SYS1 measures the value of the current I1 (i.e., the current value I1a) at the time of generating an electric field between the emitter electrode PX1 and the receiver electrode PR1 provided in the electrode device 11.

At this time, the buffer B1 outputs the clock signal CLK1 as the pulse signal PS1, and the buffer B2 sets the output to the HiZ state. Accordingly, the pulse signal PS1 is applied to the emitter electrode PX 1. On the other hand, transmitting electrode PX2 is set to the HiZ state. At this time, the switching circuit 16 outputs a drive pulse DRV obtained by inverting the logic level of the clock signal CLK 1. Accordingly, the driving pulse DRV is applied to the receiving electrode PR 1. Accordingly, an electric field occurs between the transmitting electrode PX1 and the receiving electrode PR 1.

A change in the electrostatic capacitance C1 due to the paper P1 being inserted between the emitter electrode PX1 and the receiver electrode PR1 appears as a change in the integral value of the current I1(I1 a).

The current-controlled oscillation circuit 17 outputs a clock signal CLK2 whose frequency corresponds to the current I2 proportional to the current I1. The counter 18 counts the number of oscillations per predetermined cycle of the clock signal CLK2, and outputs a count value NC 2.

The arithmetic processing unit 14 calculates the value of the current I1 (i.e., the current value I1a) at this time based on the count value NC2 when the electric field is generated between the emitter electrode PX1 and the receiver electrode PR 1.

Next, the sensor system SYS1 measures the value of the current I1 (i.e., the current value I1b) at the time of generating an electric field between the emitter electrode PX2 and the receiver electrode PR1 provided in the electrode device 11.

At this time, the buffer B1 sets the output to the HiZ state, and the buffer B2 outputs the clock signal CLK1 as the pulse signal PS 2. Thus, transmitting electrode PX1 is set in the HiZ state. On the other hand, the pulse signal PS2 is applied to the emitter electrode PX 2. At this time, the switching circuit 16 outputs a drive pulse DRV obtained by inverting the logic level of the clock signal CLK 1. Accordingly, the driving pulse DRV is applied to the receiving electrode PR 1. Accordingly, an electric field occurs between the transmitting electrode PX2 and the receiving electrode PR 1.

A change in the electrostatic capacitance C2 due to the paper P1 being inserted between the emitter electrode PX1 and the receiver electrode PR1 appears as a change in the integrated value of the current I1(I1 b).

The current-controlled oscillation circuit 17 outputs a clock signal CLK2 whose frequency corresponds to the current I2 proportional to the current I1. The counter 18 counts the number of oscillations per predetermined cycle of the clock signal CLK2, and outputs a count value NC 2.

The arithmetic processing unit 14 calculates the value of the current I1 at this time (i.e., the current value I1b) based on the count value NC2 when the electric field is generated between the emitter electrode PX2 and the receiver electrode PR 1.

Thereafter, the arithmetic processing unit 14 calculates the distance d by substituting the calculation results of the current values I1a and I1b into the above equation (9). Here, from the change in the calculation result of the distance d, the change in the capacitance value of the electrostatic capacitance C1 becomes clear. Therefore, the arithmetic processing unit 14 can calculate the amount of change in the capacitance value of the electrostatic capacitance C1, which changes as the sheet P1 is inserted between the electrodes PX1 and PR1, from the amount of change in the calculation result of the distance d. That is, the arithmetic processing unit 14 can accurately detect whether the sheet P1 is inserted between PX1 and PR1 through the calculation result of the distance d, and the arithmetic processing unit 14 can also determine the material of the sheet P1 inserted between PX1 and PR1 according to the improvement in the detection accuracy.

As described above, the electrode device 11 according to the present embodiment includes the receiving electrode PR1, the emitting electrodes PX1 and PX2 arranged facing the receiving electrode PR1, and the dielectric substrate 101 disposed between the emitting electrodes PX1 and PX 2. Then, the sensor system SYS1 calculates the amount of change in the capacitance value of the electrostatic capacitance C1 based on the consumption current value I1a when an electric field is generated between the electrodes PX1, PR1 and the consumption current value I1b when an electric field is generated between the electrodes PX2, PR 1. Therefore, the sensor system SYS1 can accurately detect whether the sheet P1 is inserted between the electrodes PX1 and PR 1. The control device 12 may also determine the material of the sheet P1 inserted between the PX1 and PR1 electrodes according to the improvement in detection accuracy.

In the present embodiment, the pulse signals applied to the emitter electrodes PX1 and PX2 and the driving pulse DRV applied to the receiver electrode PR1 have opposite phases, but the present invention is not limited thereto. The pulse signal applied to the transmitting electrodes PX1 and PX2 and the driving pulse DRV applied to the receiving electrode PR1 may be in phase with each other. Alternatively, the change amount of the capacitance value of the electrostatic capacitance C1 may be measured using the difference between each of the inverted and in-phase current values I1a and the difference between each of the inverted and in-phase current values I1 b. Accordingly, reactive current components included in each of the currents I1a and I1b, which are caused by other external components (such as parasitic capacitances) other than the transmitting electrode and the receiving electrode, are eliminated, thereby improving the measurement accuracy of the amount of change in the capacitance values of the electrostatic capacitances C1 and C2 only between the transmitting electrode PX1, PX2, and the receiving electrode PR 1.

In the present embodiment, the case where the output of the buffer B2 is set to the HiZ state when the buffer B1 outputs the pulse signal PS1 has been described, but the present invention is not limited to this case. When the buffer B1 outputs the pulse signal PS1, the buffer B2 may output the pulse signal PS2 in phase with the pulse signal PS 1. At this time, since the potential difference between the electrodes PX1, PX2 becomes substantially 0V, interference of the electric field generated between the electrodes PX1, PR1 and the electric field generated between the electrodes PX1, PX2 is suppressed to a negligible degree.

In the present embodiment, a case where the control device 12 measures the consumption current value when the electric field is generated between the electrodes PX1, PR1 and the consumption current value when the electric field is generated between the electrodes PX2, PR1 and calculates the change amount of the capacitance value of the electrostatic capacitance C1 from the measurement result is described as an example, but the present invention is not limited to this example. For example, the control device 12 may be configured to: the inter-electrode voltage when an electric field is generated between the electrodes PX1, PR1 and the inter-electrode voltage when an electric field is generated between the electrodes PX2, PR1 are measured, and the change amount of the capacitance value of the electrostatic capacitance C1 is calculated from the measurement results.

Further, in the present embodiment, the control device 12 detects whether the sheet P1 is inserted between the electrodes PX1 and PR1 of the electrode device 11, but the present invention is not limited thereto. The control device 12 may also detect a touch to the electrode PX1 or the electrode PR1, which touch causes a change in the distance d between the electrodes PX1 and PR1 of the electrode arrangement 11.

Second embodiment

Fig. 3 is a schematic sectional view showing a configuration example of the electrode device 21 according to the second embodiment. In contrast to the electrode arrangement 60, the electrode arrangement 21 further comprises a reference electrode pair consisting of a transmitting electrode PXr and a receiving electrode PRr. Hereinafter, a detailed description will be given.

As shown in fig. 3, the electrode device 21 includes an emitting electrode PX1, a receiving electrode PR1, an emitting electrode PXr, a receiving electrode PRr, and dielectric substrates 101 and 102. The emitting electrode PX1 and the receiving electrode PR1 constitute a first electrode pair in which an object to be detected (such as paper) can be inserted between the electrodes. The transmitting electrode PXr and the receiving electrode PRr constitute a reference electrode pair.

Specifically, the emitter electrodes PX1 and PXr are arranged on one main surface of the dielectric substrate 101. The receiving electrodes PR1 and PRr are arranged on the main surface of the dielectric substrate 102 arranged facing the dielectric substrate 101 at a predetermined distance d facing the transmitting electrodes PX1 and PXr. Here, the first electrode pair and the reference electrode pair are arranged adjacent to each other so that the influence of the electric field can be ignored. The dielectric substrates 101 and 102 are, for example, glass epoxy substrates.

An electrostatic capacitance C1 is formed between the emitter electrode PX1 and the receiver electrode PR 1. An electrostatic capacitance Crf is formed between the emitter PXr and the receiver PRr.

In fig. 3, a space region in which an object to be detected (such as paper) can be inserted is formed between the transmitting electrode PX1 and the receiving electrode PR 1. Hereinafter, a case where the object to be detected is a paper sheet (paper) P1 will be exemplified. On the other hand, an object to be detected such as paper may not be inserted between the transmitting electrode PXr and the receiving electrode PRr.

Fig. 4 is a schematic sectional view showing a case where a sheet of paper P1 is inserted between the electrodes PX1 and PR1 of the electrode device 11. As shown in fig. 4, if the thickness of the sheet is d1(< d), a sheet of paper P1 having a dielectric constant different from that of air is inserted instead of air in a region corresponding to the thickness d1 in the spatial region where the distance d between the electrodes PX1 and PR 1. Therefore, the capacitance value of the electrostatic capacitance C1 between the electrodes PX1 and PR1 changes.

Here, assuming that the thickness of the sheet P1 is 90 μm and the dielectric constant of the sheet P1 is twice the dielectric constant of air, since the sheet P1 is inserted between the electrodes PX1 and PR1, the change in the capacitance value of the electrostatic capacitance C1 corresponds to the change in the capacitance value of the electrostatic capacitance C1 when the distance d between the electrodes is shortened by 45 μm. That is, the capacitance value of the electrostatic capacitance C1 formed between the electrodes PX1 and PR1 is not limited to the case where the sheet P1 is inserted between the electrodes PX1 and PR1, and the capacitance value changes even when the distance d between the electrodes fluctuates.

On the other hand, when the paper sheet P1 is inserted between the electrodes PX1 and PR1, the capacitance value of the electrostatic capacitance Crf formed between the electrodes PXr and PRr does not change, but when the distance d between the electrodes changes, the capacitance value of the electrostatic capacitance Crf changes together with the capacitance value of the electrostatic capacitance C1.

Therefore, by subtracting the capacitance value of the electrostatic capacitance Crf from the capacitance value of the electrostatic capacitance C1 and removing the variation component of the electrostatic capacitance C1 caused by the variation of the distance d between the electrodes, the change in the capacitance value of the electrostatic capacitance C1 caused by the insertion of the paper sheet P1 between the electrodes PX1 and PR1 can be obtained.

Therefore, the electrode device 21 according to the present embodiment includes a first electrode pair capable of inserting the sheet P1 between the electrodes and the corresponding reference electrode pairs. Here, by subtracting the capacitance value of the electrostatic capacitance Crf of the reference electrode pair from the capacitance value of the electrostatic capacitance C1 of the first extreme value, the variation component of the electrostatic capacitance C1 due to the variation of the inter-electrode distance d can be removed. Therefore, the sensor using the electrode device 21 can accurately detect whether the sheet P1 is interposed between the electrodes PX1 and PR1 by calculating the change in the electrostatic capacitance C1 based on the difference in the consumption current value when the electric field is generated in each of the first electrode pair and the reference electrode pair. The sensor using the electrode device 21 can also determine the material of the sheet P1 inserted between the electrodes PX1 and PR1 according to the improvement in detection accuracy.

Description of a sensor system SYS2 with an electrode arrangement 21

The sensor system SYS2 with the electrode arrangement 21 is explained next. Fig. 5 is a diagram showing an exemplary configuration of a sensor system (semiconductor system) SYS2 including the electrode device 21.

As shown in fig. 5, the sensor system SYS2 includes an electrode device 21 and a control device (semiconductor device) 22. The control device 22 includes a capacitance detector 23, an arithmetic processing unit (CPU)14, and terminals TX1, TR1, and TRr. The transmitting electrodes PX1 and PXr of the electrode device 21 are connected to the terminal TX 1. The receiving electrode PR1 of the electrode arrangement 21 is connected to a terminal TR 1. The receiving electrode PRr of the electrode device 21 is connected to a terminal TRr.

Compared with the capacitance detecting unit 13, the capacitance detecting unit 23 includes only the buffer B1 of the buffers B1 and B2, and further includes the switch circuit SW 3. The switch circuit SW3 selectively outputs the drive pulse DRV output from the switch circuit 16 to any one of the terminals TR1 and TRr.

The remaining configuration of the capacitance detection unit 23 is the same as that of the capacitance detection unit 13, and thus a description thereof is omitted.

Sensor system SYS2 operation

The operation of the sensor system SYS2 is then described. First, the sensor system SYS2 measures the value of the current I1 (current value I1c) at the time of generating an electric field between the emitter electrode PX1 and the receiver electrode PR1 provided in the electrode device 21. At this time, the buffer B1 outputs the clock signal CLK1 to the terminal TX1 as the pulse signal PS 1. Accordingly, the pulse signal PS1 is applied to the emitter electrode PX 1. The switch circuit SW3 outputs the drive pulse DRV output from the switch circuit 16 to the terminal TR 1. Accordingly, the driving pulse DRV is applied to the receiving electrode PR 1. Accordingly, an electric field occurs between the transmitting electrode PX1 and the receiving electrode PR 1.

A change in the electrostatic capacitance C1 due to an unintentional change in the distance d between the sheet P1 and the receiving electrode PR1 or between the electrodes inserted between the emitter electrode PX1 appears as an integral change in the current I1 (I1C).

The current-controlled oscillation circuit 17 outputs a clock signal CLK2 whose frequency corresponds to the current I2 proportional to the current I1. The counter 18 counts the number of oscillations per predetermined cycle of the clock signal CLK2, and outputs a count value NC 2.

The arithmetic processing unit 14 calculates the value of the current I1 at this time (i.e., the current value I1c) based on the count value NC2 when the electric field is generated between the emitter PX1 and the receiver PR 1.

Next, the sensor system SYS2 measures the value of the current I1 (current value I1r) at the time of generating an electric field between the transmitting electrode PXr and the receiving electrode PRr provided in the electrode device 21. At this time, the buffer B1 outputs the clock signal CLK1 to the terminal TX1 as the pulse signal PS 1. Accordingly, the pulse signal PS1 is applied to the transmission electrode PXr. The switch circuit SW3 outputs the drive pulse DRV output from the switch circuit 16 to the terminal TRr. Thus, the driving pulse DRV is applied to the receiving electrode PRr. Accordingly, an electric field occurs between the transmitting electrode PXr and the receiving electrode PRr.

Here, a change in the electrostatic capacitance Crf due to an unintentional change in the inter-electrode distance d appears as an integral change in the current I1(I1 r).

The current-controlled oscillation circuit 17 outputs a clock signal CLK2 whose frequency corresponds to the current I2 proportional to the current I1. The counter 18 counts the number of oscillations per predetermined cycle of the clock signal CLK2, and outputs a count value NC 2.

The arithmetic processing unit 14 calculates the value of the current I1 at this time (i.e., the current value I1r) based on the count value NC2 when the electric field is generated between the transmitting electrode PXr and the receiving electrode PRr.

Thereafter, the arithmetic processing unit 14 subtracts the current value I1r from the current value I1c to remove a variation component of the current value caused by an unintentional variation of the inter-electrode distance d. According to the change of the current value I1C-I1r, the change of the capacitance value of the electrostatic capacitance C1 becomes clear. Therefore, the arithmetic processing unit 14 can calculate the amount of change in the capacitance value of the electrostatic capacitance C1, which changes as the sheet P1 is inserted between the electrodes PX1 and PR 1. In other words, the arithmetic processing unit 14 can accurately detect whether the sheet P1 is inserted between the electrodes PX1 and PR1 based on the amount of change in the current value I1c-I1 r. The arithmetic processing unit 14 may also determine the material of the sheet P1 interposed between the electrodes PX1 and PR1 according to the improvement in detection accuracy.

Therefore, the electrode device 21 according to the present embodiment includes a first electrode pair and a corresponding reference electrode pair between which the sheet P1 can be inserted. Next, the sensor system SYS2 calculates the amount of change in the capacitance value of the electrostatic capacitance C1 based on the difference between the consumption current value I1C when an electric field is generated in the first electrode pair and the consumption current value I1r when an electric field is generated in the reference electrode pair. Therefore, the sensor system SYS1 can remove the variation component of the electrostatic capacitance C1 caused by the unintentional variation of the inter-electrode distance d, and therefore, it can accurately detect whether or not the sheet P1 is interposed between the electrodes PX1 and PR 1. The control device 12 may also determine the material of the sheet of paper P1 interposed between the electrodes PX1 and PR 1.

In the present embodiment, the pulse signal applied to the transmitting electrode PX1 and the driving pulse DRV applied to the receiving electrode PR1 have opposite phases, but the present invention is not limited thereto. The pulse signal applied to the transmitting electrode PX1 and the driving pulse DRV applied to the receiving electrode PR1 may be in phase. Alternatively, the change amount of the capacitance value of the electrostatic capacitance C1 may be measured using the difference between each of the inverted and in-phase current values I1C and the difference between each of the inverted and in-phase current values I1 r. Therefore, the fluctuation components of the reactive current included in the currents I1C and I1r are eliminated, and the measurement accuracy of the capacitance value change amount of the electrostatic capacitance C1 is improved.

In the present embodiment, the case where the consumption current value I1c when the electric field is generated in the first electrode pair and the consumption current value I1r when the electric field is generated in the reference electrode pair are alternately measured is described, but the present invention is not limited to this case. By separately providing the current supply path of the first electrode pair and the current supply path of the reference electrode pair, the consumption current values I1c, I1r can be measured in parallel.

In the present embodiment, the following case has been described: the control device 22 measures the consumption current value when the electric field is generated between the electrodes PX1 and PR1 and the consumption current value when the electric field is generated between the electrodes PXr and PRr, and calculates the change amount of the capacitance value of the electrostatic capacitance C1 from the measurement result, but the case is not limited thereto. For example, the control device 22 may be configured to measure the inter-electrode voltage when an electric field is generated between the electrodes PX1 and PR1, and the inter-electrode voltage when an electric field is generated between the electrodes PXr and PRr, and calculate the change amount of the capacitance value of the electrostatic capacitance C1 from the measurement results.

Further, in the present embodiment, the control device 22 detects whether the sheet P1 is inserted between the electrodes PX1 and PR1 of the electrode device 21, but the present invention is not limited thereto. Control device 22 may also detect a contact to electrode PX1 or electrode PR1, which contact results in a change in the distance d between electrodes PX1 and PR1 of electrode arrangement 21. In this case, however, the electrode arrangement 21 needs to be configured such that the distance between the electrode PXr and the electrode PRr does not vary due to the contact to the electrode PX1 or the electrode PR 1.

First modification of the second embodiment

Fig. 6 is a schematic sectional view showing a first modification of the electrode device 21, which is an electrode device 21 a. As shown in fig. 6, in contrast to the electrode arrangement 21, the electrode arrangement 21a includes a solid dielectric layer 103 between the reference electrode and the electrode, rather than a spatial region. The remaining structure of the electrode assembly 21a is the same as that of the electrode assembly 21, and thus a description thereof is omitted.

The electrode device 21a can prevent the paper sheet P1 from being inserted between the electrodes of the reference electrode pair by providing the solid dielectric layer 103 between the electrodes of the reference electrode pair.

Second modification of the second embodiment

Fig. 7 is a schematic sectional view showing a second modification of the electrode device 21, which is an electrode device 21 b. As shown in fig. 7, in contrast to electrode arrangement 21a, electrode arrangement 21b includes two pairs of reference electrodes instead of one pair.

The first reference electrode pair includes electrodes PXr a and PRra corresponding to the electrodes PXr and PRr and a dielectric layer 103a corresponding to the dielectric layer 103. The second reference electrode pair includes electrodes PXrb and PRrb corresponding to the electrodes PXr and PRr and a dielectric layer 103b corresponding to the dielectric layer 103.

The first and second reference electrode pairs are arranged, for example, so as to sandwich a region where the sheet P1 is inserted. The remaining structure of the electrode assembly 21b is the same as that of the electrode assembly 21, and thus a description thereof is omitted.

The electrode assembly 21b is effective as the electrode assembly 21 a. In addition, the electrode device 21b can suppress variation in the distance variation between the first electrode pair electrodes and variation in the distance variation between the first and second reference electrode pairs electrodes.

Third embodiment

The present embodiment describes an application example of the sensor system SYS 1. Fig. 8 is a diagram showing an application example of the sensor system SYS 1. In fig. 8, a sensor system SYS1 is applied to the copying machine M1. In fig. 8, the control device 22 further includes a machine learning unit 19.

The machine learning unit 19 machine-learns the difference in the detection result output from the capacitance detecting unit 13 according to, for example, the type of paper P1 used in the copying machine M1. The arithmetic processing unit 14 instructs various devices to perform processing in accordance with the type of the paper sheet P1 predicted by the learning result of the machine learning unit 19.

Here, the dielectric constant of the paper sheet P1 changes depending on the water content. Therefore, when the type of the sheet P1 used in the copying machine M1 is determined, the arithmetic processing unit 14 can estimate the moisture content of the sheet P1 from the dielectric constant of the sheet P1 used in the copying machine M1. For example, the arithmetic processing unit 14 instructs the drying temperature and the drying time of the sheet P1 to the heater mounted on the copying machine M1 based on the estimated value. Therefore, the occurrence of the curl phenomenon of the sheet P1 is appropriately suppressed, thereby eliminating the phenomenon of paper jam or the like of the copying machine M1.

In the present embodiment, the sensor system SYS1 is applied to the copying machine M1, but the present invention is not limited thereto. Of course, the sensor system SYS2 may be applied to the copying machine M1.

Although the invention of the inventor has been specifically described based on the embodiment, the invention is not limited to the embodiment which has been described, and needless to say, various modifications can be made without departing from the gist of the invention.

For example, in the above-described embodiments according to the semiconductor device, the conductivity type (p-type or n-type), the semiconductor layer, the diffusion layer (diffusion region), and the like of the semiconductor substrate may be inverted. Thus, if one of the conductivity types of n-type or p-type is a first conductivity type and the other conductivity type is a second conductivity type, the first conductivity type may be p-type and the second conductivity type may be n-type, or vice versa, the first conductivity type may be n-type and the second conductivity type may be p-type.

Some or all of the above-described embodiments may be described as the following additional expressions, but the present invention is not limited thereto.

(additional expression 1) an electrode device for mutual capacitance type capacitance detection, comprising:

a first electrode pair allowing an object to be detected to be arranged; and

a reference electrode pair provided corresponding to the first electrode pair,

wherein the first electrode pair has a first transmitting electrode and a first receiving electrode arranged at a predetermined interval facing the first transmitting electrode, and

wherein the reference electrode pair includes:

a second emitter electrode disposed on the first substrate, the first emitter electrode disposed on the substrate; and

and second receiving electrodes disposed on the second substrate at predetermined intervals facing the second transmitting electrodes, the first transmitting electrodes being disposed on the second substrate.

(additional expression 2) the electrode device according to additional expression 1, wherein a spatial region in which an object can be inserted is formed between the first transmitting electrode and the first receiving electrode in the first electrode pair.

(additional expression 3) the electrode device according to additional expression 2, wherein it is determined whether an object has been inserted between the first transmission electrode and the first reception electrode based on a calculation result of capacitance between the first transmission electrode and the first reception electrode; the calculation result of the capacitance is calculated using a difference between a consumption current value when a first electric field is generated between the first transmission electrode and the first reception electrode and a consumption current value when a second electric field is generated between the second transmission electrode and the second reception electrode.

(additional expression 4) the apparatus according to additional expression 2, wherein the object to be detected is a paper sheet.

(additional expression 5) the electrode device according to additional expression 1, wherein it is determined whether there is contact with the object that causes a change in the distance between the first transmission electrode and the first reception electrode based on a capacitance calculation result between the first transmission electrode and the first reception electrode; the calculation result is calculated using a difference between a consumption current value when a first electric field is generated between the first transmitting electrode and the first receiving electrode and a consumption current value when a second electric field is generated between the second transmitting electrode and the second receiving electrode.

(additional expression 6) the electrode device according to additional expression 1, wherein the reference electrode pair is disposed adjacent to the first electrode pair.

(additional expression 7) the electrode device according to additional expression 1, wherein the reference electrode pair further includes a solid dielectric layer formed between the second transmitting electrode and the second receiving electrode.

(additional expression 8) the electrode device according to additional expression 7,

wherein the reference electrode pair includes a first reference electrode pair and a second reference electrode pair, and

wherein the first electrode pair is disposed between the first reference electrode pair and the second reference electrode pair.

(additional expression 9) a semiconductor system includes:

an electrode arrangement; and

a semiconductor device is provided with a semiconductor substrate,

wherein the electrode device comprises:

a first electrode pair including a first transmitting electrode and a first receiving electrode arranged at a predetermined interval facing the first transmitting electrode; the first electrode pair is configured to be arranged on an object to be detected;

a first reference electrode pair comprising:

a second emitter electrode disposed on the first substrate; a first emitter electrode disposed on the first substrate, an

A second receiving electrode disposed on the second substrate opposite to the second transmitting electrode at a predetermined interval; a first receiver disposed on the second substrate;

wherein the semiconductor device includes:

a pulse signal output circuit for outputting a pulse signal to each of the first and second transmitting electrodes;

a capacitance detection circuit for calculating a change amount of capacitance between the first transmission electrode and the first reception electrode; calculating a change amount of capacitance based on a current consumed at the first receiving electrode when the pulse signal is applied to the first transmitting electrode and a current consumed at the second receiving electrode when the pulse signal is applied to the second transmitting electrode, and

An arithmetic processing unit for determining whether or not an object is disposed on the first electrode pair of the electrode device based on a detection result of the capacitance detection circuit.

(additional expression 10) the semiconductor system according to additional expression 9,

wherein a space region in which an object can be inserted is formed between the first transmitting electrode and the first receiving electrode, and

wherein the arithmetic processing unit is configured to determine whether an object is interposed between the first transmitting electrode and the first receiving electrode based on a detection result of the capacitance detection circuit.

(additional expression 11) the semiconductor system according to additional expression 9, wherein the arithmetic processing unit is configured to determine whether there is a touch to the object that causes a change in a distance between the first transmission electrode and the first reception electrode based on a detection result of the capacitance detection circuit.

(additional expression 12) the semiconductor system according to additional expression 9, wherein the arithmetic processing unit is configured to determine whether the object is disposed on the first electrode pair of the electrode device, and determine the processing for the object based on the determination of whether the object is disposed on the first electrode pair of the electrode device.

(additional expression 13) the semiconductor system according to additional expression 12, further comprising a machine learning unit for machine learning a difference in a detection result of the capacitance detection circuit according to a type of the object, wherein the arithmetic processing unit is configured to determine a process for the object according to the type of the object; the processing is predicted by the machine learning unit based on the learning result.

(additional expression 14) an electrode device for mutual capacitance type capacitance detection, comprising:

a receiving electrode;

a first transmitting electrode disposed to face the receiving electrode;

a second transmitting electrode disposed opposite to the receiving electrode with the first transmitting electrode interposed therebetween; and

a dielectric substrate is provided between the first and second emitter electrodes to fix a distance and a dielectric constant between the first and second emitter electrodes.

(additional expression 15) the electrode device according to additional expression 14, wherein a space region into which an object to be detected can be inserted is formed between the first transmitting electrode and the receiving electrode.

(additional expression 16) the electrode device according to additional expression 15,

wherein a value converted into a distance between the first transmission electrode and the reception electrode is calculated based on a calculation result of a capacitance between the first transmission electrode and the reception electrode, a calculation result of a capacitance is calculated by using a consumption current value when a first electric field is generated between the first transmission electrode and the reception electrode and a consumption current value when a second electric field is generated between the second transmission electrode and the reception electrode including the dielectric substrate, and

Wherein it is determined whether the detection object has been inserted between the first transmission electrode and the reception electrode or specifies a material of the object, based on the calculation result converted into the value of the distance between the first transmission electrode and the reception electrode.