Solar energy high-efficiency absorption microstructure

文档序号:985447 发布日期:2020-11-06 浏览:13次 中文

阅读说明:本技术 一种太阳能高效吸收微结构 (Solar energy high-efficiency absorption microstructure ) 是由 王龙 汪刘应 袁晓静 唐修检 刘顾 田欣利 许可俊 于 2020-07-02 设计创作,主要内容包括:本发明涉及一种太阳能高效吸收微结构,其特征在于,是在由两种不同的折射率材料按照周期性交替排列形成的对称人造光子晶体双异质膜系结构H[LH]<Sup>n</Sup>[HL]<Sup>n</Sup>H的对称中心加入缺陷层T组成的,所述缺陷层T为二维半导体材料;所述太阳能高效吸收微结构为H[LH]<Sup>n</Sup>T[HL]<Sup>n</Sup>H,其中,n代表L膜层和H膜层交替排列的周期次数,2≤n≤6。本发明的太阳能高效吸收微结构通过在对称人造光子晶体双异质膜系结构的对称中心处引入缺陷层,过缺陷层T调制光子晶体能带特性,实现了光子局域态,扩宽了可见光高吸收的频域,提高太阳能吸收效率。(The invention relates to a solar energy high-efficiency absorption microstructure, which is characterized in that a symmetric artificial photonic crystal double-heterogeneous film system structure H [ LH ] formed by two materials with different refractive indexes arranged alternately according to a periodicity] n [HL] n A defect layer T is added to the symmetric center of the H, and the defect layer T is a two-dimensional semiconductor material; the solar energy high-efficiency absorption microstructure is H [ LH ]] n T[HL] n And H, wherein n represents the cycle times of the L film layer and the H film layer which are alternately arranged, and n is more than or equal to 2 and less than or equal to 6. According to the solar energy high-efficiency absorption microstructure, the defect layer is introduced into the symmetrical center of the symmetrical artificial photonic crystal double-heterogeneous film system structure, and the photonic crystal energy band characteristic is modulated through the defect layer T, so that a photon local state is realized, the frequency domain of high absorption of visible light is widened, and the solar energy absorption efficiency is improved.)

1. A solar energy high-efficiency absorption microstructure is characterized in that a symmetric artificial photonic crystal double-heterogeneous film system structure H [ LH ] formed by two materials with different refractive indexes arranged alternately according to periodicity]n[HL]nA defect layer T is added to the symmetric center of the H, and the defect layer T is a two-dimensional semiconductor material;

the solar energy high-efficiency absorption microstructure is H [ LH ]]nT[HL]nH, wherein n represents the cycle times of the alternate arrangement of the L film layer and the H film layer, and n is more than or equal to 2 and less than or equal to 6;

the L film layer and the H film layer meet the following conditions:

wherein n isHDenotes the refractive index of the H film layer, nLDenotes the refractive index of the L film layer, dHDenotes the thickness of the H film layer, dLThe thickness of the L film layer is indicated.

2. The solar high efficiency absorbing microstructure as claimed in claim 1, wherein the thickness d of said defect layer TT≤10nm。

3. The solar high efficiency absorbing microstructure as claimed in claim 1, wherein the material of said H and L film layers is ZnS, PbTe, Al2O3、SiO2、Si3N4Or TiO2A material.

4. The solar energy generator of claim 1The effective absorption microstructure is characterized in that the material of the defect layer T is MoS2、MoSe2、WS2、WSe2Or a graphene material.

Technical Field

The invention belongs to the technical field of photoelectric functional devices, and particularly relates to a solar energy efficient absorption microstructure.

Background

Solar energy is used as a clean and renewable new energy source, and is the most effective way for solving the current global energy crisis and ecological imbalance. The heat collector is an important element in the light-heat conversion process, and the solar energy absorption surface material of the heat collector determines the light-heat conversion efficiency. The current solar selective absorption film structure can be mainly divided into intrinsic absorption, dielectric-metal composite, dielectric metal interference, multilayer gradual change, surface microstructure and other types.

However, some current solar selective absorption thin film structures and materials have limitations of low absorption efficiency, poor high temperature resistance, low photo-thermal conversion efficiency, and the like. The photonic crystal metamaterial is a novel artificial material for simulating biological micro-nano structures, controls transmission characteristics such as phase, polarization, intensity and the like of space light waves through a micro-nano film system structure, and has unique advantages. Therefore, it is of great significance to provide a solar energy efficient absorption microstructure which can regulate and control the solar energy spectrum absorption characteristics, widen the visible light high absorption frequency domain and improve the solar energy absorption efficiency.

Disclosure of Invention

In order to solve the above problems in the prior art, the present invention provides a solar energy high efficiency absorption microstructure. The technical problem to be solved by the invention is realized by the following technical scheme:

the invention provides a solar energy high-efficiency absorption microstructure, which is a symmetric artificial photonic crystal double-heterogeneous membrane system structure H [ LH ] formed by periodically and alternately arranging two materials with different refractive indexes]n[HL]nA defect layer T is added to the symmetric center of the H, and the defect layer T is a two-dimensional semiconductor material;

the solar energy high-efficiency absorption microstructure is H [ LH ]]nT[HL]nH, wherein n represents the cycle times of the alternate arrangement of the L film layer and the H film layer, and n is more than or equal to 2 and less than or equal to 6;

the L film layer and the H film layer meet the following conditions:

Figure BDA0002567292990000021

wherein n isHDenotes the refractive index of the H film layer, nLDenotes the refractive index of the L film layer, dHDenotes the thickness of the H film layer, dLThe thickness of the L film layer is indicated.

In one embodiment of the present invention, the thickness d of the defect layer TT≤10nm。

In one embodiment of the present invention, the material of the H film layer and the L film layer is ZnS, PbTe, Al2O3、SiO2、Si3N4Or TiO2A material.

In one embodiment of the present invention, the material of the defect layer T is MoS2、MoSe2、WS2、WSe2Or a graphene material.

Compared with the prior art, the invention has the beneficial effects that:

the solar energy high-efficiency absorption microstructure of the invention is formed by a symmetrical artificial photonic crystal double heterogeneous film system structure H [ LH ]]n[HL]nAnd a defect layer T is introduced into the symmetrical center of the H, the photonic crystal energy band characteristic is modulated through the defect layer T, a photon local state is realized, a corresponding defect energy level can be formed in the range of 400-600 nm, a spectrum hole digging phenomenon appears near the center of a high reflection band of a reflection spectrum, a frequency domain low reflection band is formed, the frequency domain with high absorption of visible light is widened, and the solar energy absorption efficiency is improved.

The foregoing description is only an overview of the technical solutions of the present invention, and in order to make the technical means of the present invention more clearly understood, the present invention may be implemented in accordance with the content of the description, and in order to make the above and other objects, features, and advantages of the present invention more clearly understood, the following preferred embodiments are described in detail with reference to the accompanying drawings.

Drawings

FIG. 1 is a schematic diagram of a solar high-efficiency absorption microstructure provided by an embodiment of the invention;

FIG. 2 is a schematic diagram of another solar energy efficient absorption microstructure provided by embodiments of the invention;

FIG. 3 is a graph of the reflection spectrum characteristics of the infrared band of the solar energy highly efficient absorption microstructure provided by the embodiment of the invention;

fig. 4 is an absorption spectrum characteristic diagram of an infrared band of a solar energy highly efficient absorption microstructure provided by an embodiment of the invention.

Detailed Description

In order to further explain the technical means and effects of the present invention adopted to achieve the predetermined objects, a solar energy highly efficient absorption microstructure according to the present invention is described in detail below with reference to the accompanying drawings and the detailed description.

The foregoing and other technical matters, features and effects of the present invention will be apparent from the following detailed description of the embodiments, which is to be read in connection with the accompanying drawings. The technical means and effects of the present invention adopted to achieve the predetermined purpose can be more deeply and specifically understood through the description of the specific embodiments, however, the attached drawings are provided for reference and description only and are not used for limiting the technical scheme of the present invention.

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