Laser gas regeneration device and method for manufacturing electronic device
阅读说明:本技术 ***体再生装置和电子器件的制造方法 (Laser gas regeneration device and method for manufacturing electronic device ) 是由 对马弘朗 田中智史 藤卷洋介 浅山武志 若林理 于 2018-10-22 设计创作,主要内容包括:激光气体再生装置对从至少一个ArF准分子激光装置排出的排出气体进行再生,并将再生气体供给到至少一个ArF准分子激光装置,该至少一个ArF准分子激光装置与第1激光气体供给源和第2激光气体供给源连接,第1激光气体供给源供给包含氩气、氖气和第1浓度的氙气在内的第1激光气体,第2激光气体供给源供给包含氩气、氖气和氟气的第2激光气体,其中,激光气体再生装置具有:数据取得部,其取得被供给到至少一个ArF准分子激光装置的第2激光气体的供给量的数据;氙添加部,其将包含氩气、氖气和比第1浓度高的第2浓度的氙气在内的第3激光气体添加到再生气体中;以及控制部,其根据供给量对基于氙添加部的第3激光气体的添加量进行控制。(A laser gas regeneration device regenerates an exhaust gas discharged from at least one ArF excimer laser device, and supplies the regeneration gas to the at least one ArF excimer laser device, wherein the at least one ArF excimer laser device is connected with a 1 st laser gas supply source and a 2 nd laser gas supply source, the 1 st laser gas supply source supplies a 1 st laser gas containing argon gas, neon gas and xenon gas with a 1 st concentration, and the 2 nd laser gas supply source supplies a 2 nd laser gas containing argon gas, neon gas and fluorine gas, the laser gas regeneration device comprises: a data acquisition unit for acquiring data of the supply amount of the 2 nd laser gas supplied to the at least one ArF excimer laser device; a xenon addition unit that adds a 3 rd laser gas containing argon, neon, and xenon at a 2 nd concentration higher than the 1 st concentration to the regeneration gas; and a control unit for controlling the amount of the 3 rd laser gas added by the xenon addition unit according to the amount of the xenon.)
1. A laser gas regeneration device that regenerates an exhaust gas discharged from at least one ArF excimer laser device and supplies the regeneration gas to the at least one ArF excimer laser device, the at least one ArF excimer laser device being connected to a 1 st laser gas supply source and a 2 nd laser gas supply source, the 1 st laser gas supply source supplying a 1 st laser gas containing argon gas, neon gas, and xenon gas at a 1 st concentration, the 2 nd laser gas supply source supplying a 2 nd laser gas containing argon gas, neon gas, and fluorine gas, the laser gas regeneration device comprising:
a data acquisition unit configured to acquire data of a supply amount of the 2 nd laser gas supplied to the at least one ArF excimer laser apparatus;
a xenon addition unit that adds a 3 rd laser gas containing argon, neon, and xenon at a 2 nd concentration higher than the 1 st concentration to the regeneration gas; and
and a control unit for controlling the amount of the 3 rd laser gas added by the xenon addition unit according to the amount of the xenon.
2. The laser gas regeneration device according to claim 1,
the control unit controls the amount of the 3 rd laser gas added by the xenon addition unit so as to be proportional to the amount of the supplied laser gas.
3. The laser gas regeneration device according to claim 1,
the laser gas regeneration device further includes a measurement unit that measures the supply amount and transmits data of the supply amount to the data acquisition unit.
4. The laser gas regeneration device according to claim 3,
the measuring unit includes a mass flow meter disposed in a pipe connected between the 2 nd laser gas supply source and the at least one ArF excimer laser device.
5. The laser gas regeneration device according to claim 1,
the data acquisition unit receives measurement data from a mass flow meter disposed in a pipe connected between the at least one ArF excimer laser device and the 2 nd laser gas supply source, and thereby acquires data on the supply amount.
6. The laser gas regeneration device according to claim 1,
the data acquisition unit receives the data of the supply amount from the at least one ArF excimer laser apparatus, thereby acquiring the data of the supply amount.
7. The laser gas regeneration device according to claim 1,
the laser gas regeneration device further includes a regeneration gas tank that stores and mixes the regeneration gas to which the 3 rd laser gas is added by the xenon addition unit.
8. The laser gas regeneration device according to claim 1,
the at least one ArF excimer laser apparatus includes a plurality of ArF excimer laser apparatuses.
9. The laser gas regeneration device according to claim 8,
the supply amount is a sum of supply amounts of the 2 nd laser gas supplied to the plurality of ArF excimer laser devices, respectively.
10. A laser gas regeneration device that regenerates an exhaust gas discharged from at least one ArF excimer laser device and supplies the regeneration gas to the at least one ArF excimer laser device, the at least one ArF excimer laser device being connected to a 1 st laser gas supply source and a 2 nd laser gas supply source, the 1 st laser gas supply source supplying a 1 st laser gas containing argon gas, neon gas, and xenon gas at a 1 st concentration, the 2 nd laser gas supply source supplying a 2 nd laser gas containing argon gas, neon gas, and fluorine gas, the laser gas regeneration device comprising:
a data acquisition unit that acquires data of an exhaust gas amount of laser gas that is discharged to the outside without being regenerated, from among exhaust gases discharged from the at least one ArF excimer laser apparatus;
a xenon addition unit that adds a 3 rd laser gas containing argon, neon, and xenon at a 2 nd concentration higher than the 1 st concentration to the regeneration gas; and
and a control unit for controlling the amount of the 3 rd laser gas added by the xenon addition unit according to the amount of the exhaust gas.
11. The laser gas regeneration device according to claim 10,
the control unit controls the amount of the 3 rd laser gas added by the xenon addition unit so as to be proportional to the amount of the exhaust gas.
12. The laser gas regeneration device according to claim 10,
the laser gas regeneration device further includes a measurement unit that measures the exhaust gas amount and transmits data of the exhaust gas amount to the data acquisition unit.
13. The laser gas regeneration device according to claim 12,
the measurement unit includes a mass flow meter disposed in a pipe connected between the at least one ArF excimer laser device and the outside.
14. The laser gas regeneration device according to claim 10,
the data acquisition unit receives measurement data from a mass flow meter disposed in a pipe connected between the at least one ArF excimer laser device and the outside, and thereby acquires data on the amount of exhaust gas.
15. The laser gas regeneration device according to claim 10,
the data acquisition unit receives the data of the exhaust gas amount from the at least one ArF excimer laser apparatus, thereby acquiring the data of the exhaust gas amount.
16. The laser gas regeneration device according to claim 10,
the laser gas regeneration device further includes a regeneration gas tank that stores and mixes the regeneration gas to which the 3 rd laser gas is added by the xenon addition unit.
17. The laser gas regeneration device according to claim 10,
the at least one ArF excimer laser apparatus includes a plurality of ArF excimer laser apparatuses.
18. The laser gas regeneration device according to claim 17,
the exhaust gas amount is a sum of exhaust gas amounts of laser gas discharged to the outside without being regenerated, among exhaust gases discharged from the plurality of ArF excimer laser apparatuses, respectively.
19. A method of manufacturing an electronic device, comprising the steps of:
laser light is generated by an excimer laser system having at least one ArF excimer laser apparatus and a laser gas regenerating apparatus,
the laser light is output to an exposure device,
exposing a photosensitive substrate with the laser in the exposure device,
the at least one ArF excimer laser device is connected with a 1 st laser gas supply source and a 2 nd laser gas supply source, wherein the 1 st laser gas supply source supplies a 1 st laser gas containing argon, neon and xenon with a 1 st concentration, the 2 nd laser gas supply source supplies a 2 nd laser gas containing argon, neon and fluorine,
the laser gas regeneration device regenerates the exhaust gas discharged from the at least one ArF excimer laser device and supplies the regeneration gas to the at least one ArF excimer laser device,
the laser gas regeneration device comprises:
a data acquisition unit configured to acquire data of a supply amount of the 2 nd laser gas supplied to the at least one ArF excimer laser apparatus;
a xenon addition unit that adds a 3 rd laser gas containing argon, neon, and xenon at a 2 nd concentration higher than the 1 st concentration to the regeneration gas; and
and a control unit for controlling the amount of the 3 rd laser gas added by the xenon addition unit according to the amount of the xenon.
20. A method of manufacturing an electronic device, comprising the steps of:
laser light is generated by an excimer laser system having at least one ArF excimer laser apparatus and a laser gas regenerating apparatus,
the laser light is output to an exposure device,
exposing a photosensitive substrate with the laser in the exposure device,
the at least one ArF excimer laser device is connected with a 1 st laser gas supply source and a 2 nd laser gas supply source, wherein the 1 st laser gas supply source supplies a 1 st laser gas containing argon, neon and xenon with a 1 st concentration, the 2 nd laser gas supply source supplies a 2 nd laser gas containing argon, neon and fluorine,
the laser gas regeneration device regenerates the exhaust gas discharged from the at least one ArF excimer laser device and supplies the regeneration gas to the at least one ArF excimer laser device,
the laser gas regeneration device comprises:
a data acquisition unit that acquires data of an exhaust gas amount of laser gas that is discharged to the outside without being regenerated, from among exhaust gases discharged from the at least one ArF excimer laser apparatus;
a xenon addition unit that adds a 3 rd laser gas containing argon, neon, and xenon at a 2 nd concentration higher than the 1 st concentration to the regeneration gas; and
and a control unit for controlling the amount of the 3 rd laser gas added by the xenon addition unit according to the amount of the exhaust gas.
21. A laser gas regeneration device that regenerates an exhaust gas discharged from at least one KrF excimer laser device and supplies the regeneration gas to the at least one KrF excimer laser device, wherein the at least one KrF excimer laser device is connected to a 1 st laser gas supply source and a 2 nd laser gas supply source, the 1 st laser gas supply source supplies a 1 st laser gas containing krypton, neon, and xenon at a 1 st concentration, and the 2 nd laser gas supply source supplies a 2 nd laser gas containing krypton, neon, and fluorine, the laser gas regeneration device comprising:
a data acquisition unit configured to acquire data of a supply amount of the 2 nd laser gas supplied to the at least one KrF excimer laser apparatus;
a xenon addition unit that adds a 3 rd laser gas containing krypton, neon, and xenon at a 2 nd concentration higher than the 1 st concentration to the regeneration gas; and
and a control unit for controlling the amount of the 3 rd laser gas added by the xenon addition unit according to the amount of the xenon.
22. The laser gas regeneration device according to claim 21,
the control unit controls the amount of the 3 rd laser gas added by the xenon addition unit so as to be proportional to the amount of the supplied laser gas.
23. The laser gas regeneration device according to claim 21,
the laser gas regeneration device further includes a measurement unit that measures the supply amount and transmits data of the supply amount to the data acquisition unit.
24. The laser gas regeneration device according to claim 23,
the measurement unit includes a mass flow meter disposed in a pipe connected between the 2 nd laser gas supply source and the at least one KrF excimer laser apparatus.
25. The laser gas regeneration device according to claim 21,
the data acquisition unit receives measurement data from a mass flow meter disposed in a pipe connected between the at least one KrF excimer laser apparatus and the 2 nd laser gas supply source, and thereby acquires the data of the supply amount.
26. The laser gas regeneration device according to claim 21,
the data acquisition unit receives the data of the supply amount from the at least one KrF excimer laser apparatus, thereby acquiring the data of the supply amount.
27. The laser gas regeneration device according to claim 21,
the laser gas regeneration device further includes a regeneration gas tank that stores and mixes the regeneration gas to which the 3 rd laser gas is added by the xenon addition unit.
28. The laser gas regeneration device according to claim 21,
the at least one KrF excimer laser device includes a plurality of KrF excimer laser devices.
29. The laser gas regeneration device according to claim 28,
the supply amount is a sum of supply amounts of the 2 nd laser gas supplied to the plurality of KrF excimer laser apparatuses, respectively.
30. A laser gas regeneration device that regenerates an exhaust gas discharged from at least one KrF excimer laser device and supplies the regeneration gas to the at least one KrF excimer laser device, wherein the at least one KrF excimer laser device is connected to a 1 st laser gas supply source and a 2 nd laser gas supply source, the 1 st laser gas supply source supplies a 1 st laser gas containing krypton, neon, and xenon at a 1 st concentration, and the 2 nd laser gas supply source supplies a 2 nd laser gas containing krypton, neon, and fluorine, the laser gas regeneration device comprising:
a data acquisition unit that acquires data of an exhaust gas amount of laser gas that is discharged to the outside without being regenerated, from among the exhaust gases discharged from the at least one KrF excimer laser apparatus;
a xenon addition unit that adds a 3 rd laser gas containing krypton, neon, and xenon at a 2 nd concentration higher than the 1 st concentration to the regeneration gas; and
and a control unit for controlling the amount of the 3 rd laser gas added by the xenon addition unit according to the amount of the exhaust gas.
31. The laser gas regeneration device according to claim 30,
the control unit controls the amount of the 3 rd laser gas added by the xenon addition unit so as to be proportional to the amount of the exhaust gas.
32. The laser gas regeneration device according to claim 30,
the laser gas regeneration device further includes a measurement unit that measures the exhaust gas amount and transmits data of the exhaust gas amount to the data acquisition unit.
33. The laser gas regeneration device according to claim 32,
the measurement unit includes a mass flow meter disposed in a pipe connected between the at least one KrF excimer laser device and the outside.
34. The laser gas regeneration device according to claim 30,
the data acquisition unit receives measurement data from a mass flow meter disposed in a pipe connected between the at least one KrF excimer laser apparatus and the outside, and thereby acquires data on the amount of exhaust gas.
35. The laser gas regeneration device according to claim 30,
the data acquisition unit receives the data of the exhaust gas amount from the at least one KrF excimer laser apparatus, thereby acquiring the data of the exhaust gas amount.
36. The laser gas regeneration device according to claim 30,
the laser gas regeneration device further includes a regeneration gas tank that stores and mixes the regeneration gas to which the 3 rd laser gas is added by the xenon addition unit.
37. The laser gas regeneration device according to claim 30,
the at least one KrF excimer laser device includes a plurality of KrF excimer laser devices.
38. The laser gas regeneration device according to claim 37,
the exhaust gas volume is a sum of the exhaust gas volumes of the laser gases discharged to the outside without being regenerated, among the exhaust gases discharged from the plurality of KrF excimer laser apparatuses.
39. A method of manufacturing an electronic device, comprising the steps of:
laser light is generated by an excimer laser system having at least one KrF excimer laser apparatus and a laser gas regeneration apparatus,
the laser light is output to an exposure device,
exposing a photosensitive substrate with the laser in the exposure device,
the at least one KrF excimer laser device is connected with a 1 st laser gas supply source and a 2 nd laser gas supply source, wherein the 1 st laser gas supply source supplies a 1 st laser gas containing krypton, neon and xenon with a 1 st concentration, the 2 nd laser gas supply source supplies a 2 nd laser gas containing krypton, neon and fluorine,
the laser gas regeneration device regenerates the exhaust gas discharged from the at least one KrF excimer laser device and supplies the regeneration gas to the at least one KrF excimer laser device,
the laser gas regeneration device comprises:
a data acquisition unit configured to acquire data of a supply amount of the 2 nd laser gas supplied to the at least one KrF excimer laser apparatus;
a xenon addition unit that adds a 3 rd laser gas containing krypton, neon, and xenon at a 2 nd concentration higher than the 1 st concentration to the regeneration gas; and
and a control unit for controlling the amount of the 3 rd laser gas added by the xenon addition unit according to the amount of the xenon.
40. A method of manufacturing an electronic device, comprising the steps of:
laser light is generated by an excimer laser system having at least one KrF excimer laser apparatus and a laser gas regeneration apparatus,
the laser light is output to an exposure device,
exposing a photosensitive substrate with the laser in the exposure device,
the at least one KrF excimer laser device is connected with a 1 st laser gas supply source and a 2 nd laser gas supply source, wherein the 1 st laser gas supply source supplies a 1 st laser gas containing krypton, neon and xenon with a 1 st concentration, the 2 nd laser gas supply source supplies a 2 nd laser gas containing krypton, neon and fluorine,
the laser gas regeneration device regenerates the exhaust gas discharged from the at least one KrF excimer laser device and supplies the regeneration gas to the at least one KrF excimer laser device,
the laser gas regeneration device comprises:
a data acquisition unit that acquires data of an exhaust gas amount of laser gas that is discharged to the outside without being regenerated, from among the exhaust gases discharged from the at least one KrF excimer laser apparatus;
a xenon addition unit that adds a 3 rd laser gas containing krypton, neon, and xenon at a 2 nd concentration higher than the 1 st concentration to the regeneration gas; and
and a control unit for controlling the amount of the 3 rd laser gas added by the xenon addition unit according to the amount of the exhaust gas.
Technical Field
The present disclosure relates to a laser gas regeneration device and a method of manufacturing an electronic device.
Background
In recent years, in a semiconductor exposure apparatus (hereinafter referred to as "exposure apparatus"), with the miniaturization and high integration of a semiconductor integrated circuit, improvement in resolution has been demanded. Therefore, the wavelength of light emitted from the exposure light source has been reduced. In general, a gas laser device is used as an exposure light source instead of a conventional mercury lamp. For example, as a gas laser device for exposure, a KrF excimer laser device that outputs an ultraviolet laser beam having a wavelength of 248nm and an ArF excimer laser device that outputs an ultraviolet laser beam having a wavelength of 193nm are used.
As a next-generation exposure technique, immersion exposure in which a space between an exposure lens on the exposure apparatus side and a wafer is filled with a liquid has been put into practical use. In this liquid immersion exposure, the refractive index between the exposure lens and the wafer changes, and therefore the wavelength of the external appearance of the exposure light source becomes short. When liquid immersion exposure is performed using an ArF excimer laser apparatus as an exposure light source, ultraviolet light having a wavelength of 134nm in water is irradiated onto a wafer. This technique is called ArF immersion exposure (or ArF immersion lithography).
The natural oscillation widths of the KrF excimer laser device and the ArF excimer laser device are wide, and are about 350-400 pm. Therefore, when a projection lens is formed of a material that transmits ultraviolet rays such as KrF and ArF laser light, chromatic aberration may occur. As a result, the resolution is reduced. Therefore, it is necessary to narrow the line width of the laser light output from the gas laser device to such an extent that chromatic aberration can be ignored. Therefore, a Narrow-band Module (Line Narrow Module: LNM) having a Narrow-band element (etalon, grating, or the like) may be provided in a laser resonator of the gas laser device to Narrow the Line width. Hereinafter, a laser device whose spectral line width is narrowed is referred to as a narrowed laser device.
Disclosure of Invention
A laser gas regeneration device according to one aspect of the present disclosure regenerates an exhaust gas discharged from at least one ArF excimer laser device, and supplies the regeneration gas to the at least one ArF excimer laser device, the at least one ArF excimer laser device being connected to a 1 st laser gas supply source and a 2 nd laser gas supply source, the 1 st laser gas supply source supplying a 1 st laser gas containing argon gas, neon gas, and xenon gas at a 1 st concentration, the 2 nd laser gas supply source supplying a 2 nd laser gas containing argon gas, neon gas, and fluorine gas, wherein the laser gas regeneration device comprises: a data acquisition unit for acquiring data of the supply amount of the 2 nd laser gas supplied to the at least one ArF excimer laser device; a xenon addition unit that adds a 3 rd laser gas containing argon, neon, and xenon at a 2 nd concentration higher than the 1 st concentration to the regeneration gas; and a control unit for controlling the amount of the 3 rd laser gas added by the xenon addition unit according to the amount of the xenon.
A laser gas regeneration device according to another aspect of the present disclosure regenerates an exhaust gas discharged from at least one KrF excimer laser device, and supplies the regeneration gas to the at least one KrF excimer laser device, the at least one KrF excimer laser device being connected to a 1 st laser gas supply source and a 2 nd laser gas supply source, the 1 st laser gas supply source supplying a 1 st laser gas containing krypton, neon, and xenon at a 1 st concentration, and the 2 nd laser gas supply source supplying a 2 nd laser gas containing krypton, neon, and fluorine, wherein the laser gas regeneration device includes: a data acquisition unit for acquiring data on the supply amount of the 2 nd laser gas supplied to at least one KrF excimer laser apparatus; a xenon addition unit that adds a 3 rd laser gas containing krypton, neon, and xenon at a 2 nd concentration higher than a 1 st concentration to the regeneration gas; and a control unit for controlling the amount of the 3 rd laser gas added by the xenon addition unit according to the amount of the xenon.
A laser gas regeneration apparatus according to another aspect of the present disclosure regenerates an exhaust gas discharged from at least one ArF excimer laser apparatus and supplies the regeneration gas to the at least one ArF excimer laser apparatus, the at least one ArF excimer laser apparatus being connected to a 1 st laser gas supply source and a 2 nd laser gas supply source, the 1 st laser gas supply source supplying a 1 st laser gas containing argon gas, neon gas, and xenon gas at a 1 st concentration, the 2 nd laser gas supply source supplying a 2 nd laser gas containing argon gas, neon gas, and fluorine gas, wherein the laser gas regeneration apparatus comprises: a data acquisition unit that acquires data of an exhaust gas amount of laser gas that is discharged to the outside without being regenerated, from among exhaust gases discharged from at least one ArF excimer laser apparatus; a xenon addition unit that adds a 3 rd laser gas containing argon, neon, and xenon at a 2 nd concentration higher than the 1 st concentration to the regeneration gas; and a control unit for controlling the amount of the 3 rd laser gas added by the xenon addition unit according to the amount of exhaust gas.
A laser gas regeneration device according to another aspect of the present disclosure regenerates an exhaust gas discharged from at least one KrF excimer laser device, and supplies the regeneration gas to the at least one KrF excimer laser device, the at least one KrF excimer laser device being connected to a 1 st laser gas supply source and a 2 nd laser gas supply source, the 1 st laser gas supply source supplying a 1 st laser gas containing krypton, neon, and xenon at a 1 st concentration, and the 2 nd laser gas supply source supplying a 2 nd laser gas containing krypton, neon, and fluorine, wherein the laser gas regeneration device includes: a data acquisition unit that acquires data of an exhaust gas amount of a laser gas that is discharged to the outside without being regenerated, from among exhaust gases discharged from at least one KrF excimer laser apparatus; a xenon addition unit that adds a 3 rd laser gas containing krypton, neon, and xenon at a 2 nd concentration higher than a 1 st concentration to the regeneration gas; and a control unit for controlling the amount of the 3 rd laser gas added by the xenon addition unit according to the amount of exhaust gas.
A method of manufacturing an electronic device according to an aspect of the present disclosure includes the steps of: a laser beam is generated by an excimer laser system having at least one ArF excimer laser device and a laser gas regeneration device, the laser beam is output to the exposure device, a photosensitive substrate is exposed by the laser beam in the exposure device, the at least one ArF excimer laser device is connected with a 1 st laser gas supply source and a 2 nd laser gas supply source, the 1 st laser gas supply source supplies a 1 st laser gas containing argon, neon and xenon with a 1 st concentration, the 2 nd laser gas supply source supplies a 2 nd laser gas containing argon, neon and fluorine, the laser gas regeneration device regenerates an exhaust gas discharged from the at least one ArF excimer laser device and supplies the regeneration gas to the at least one ArF excimer laser device, the laser gas regeneration device comprises: a data acquisition unit for acquiring data of the supply amount of the 2 nd laser gas supplied to the at least one ArF excimer laser device; a xenon addition unit that adds a 3 rd laser gas containing argon, neon, and xenon at a 2 nd concentration higher than the 1 st concentration to the regeneration gas; and a control unit for controlling the amount of the 3 rd laser gas added by the xenon addition unit according to the amount of the xenon.
A method of manufacturing an electronic device according to another aspect of the present disclosure includes the steps of: a laser beam is generated by an excimer laser system having at least one KrF excimer laser device and a laser gas regeneration device, the laser beam is output to the exposure device, a photosensitive substrate is exposed by the laser beam in the exposure device, the at least one KrF excimer laser device is connected with a 1 st laser gas supply source and a 2 nd laser gas supply source, the 1 st laser gas supply source supplies a 1 st laser gas containing krypton, neon and xenon with a 1 st concentration, the 2 nd laser gas supply source supplies a 2 nd laser gas containing krypton, neon and fluorine, the laser gas regeneration device regenerates an exhaust gas discharged from the at least one KrF excimer laser device and supplies the regeneration gas to the at least one KrF excimer laser device, the laser gas regeneration device comprises: a data acquisition unit for acquiring data on the supply amount of the 2 nd laser gas supplied to at least one KrF excimer laser apparatus; a xenon addition unit that adds a 3 rd laser gas containing krypton, neon, and xenon at a 2 nd concentration higher than a 1 st concentration to the regeneration gas; and a control unit for controlling the amount of the 3 rd laser gas added by the xenon addition unit according to the amount of the xenon.
A method of manufacturing an electronic device according to another aspect of the present disclosure includes the steps of: a laser beam is generated by an excimer laser system having at least one ArF excimer laser device and a laser gas regeneration device, the laser beam is output to the exposure device, a photosensitive substrate is exposed by the laser beam in the exposure device, the at least one ArF excimer laser device is connected with a 1 st laser gas supply source and a 2 nd laser gas supply source, the 1 st laser gas supply source supplies a 1 st laser gas containing argon, neon and xenon with a 1 st concentration, the 2 nd laser gas supply source supplies a 2 nd laser gas containing argon, neon and fluorine, the laser gas regeneration device regenerates an exhaust gas discharged from the at least one ArF excimer laser device and supplies the regeneration gas to the at least one ArF excimer laser device, the laser gas regeneration device comprises: a data acquisition unit that acquires data of an exhaust gas amount of laser gas that is discharged to the outside without being regenerated, from among exhaust gases discharged from at least one ArF excimer laser apparatus; a xenon addition unit that adds a 3 rd laser gas containing argon, neon, and xenon at a 2 nd concentration higher than the 1 st concentration to the regeneration gas; and a control unit for controlling the amount of the 3 rd laser gas added by the xenon addition unit according to the amount of exhaust gas.
A method of manufacturing an electronic device according to another aspect of the present disclosure includes the steps of: a laser beam is generated by an excimer laser system having at least one KrF excimer laser device and a laser gas regeneration device, the laser beam is output to the exposure device, a photosensitive substrate is exposed by the laser beam in the exposure device, the at least one KrF excimer laser device is connected with a 1 st laser gas supply source and a 2 nd laser gas supply source, the 1 st laser gas supply source supplies a 1 st laser gas containing krypton, neon and xenon with a 1 st concentration, the 2 nd laser gas supply source supplies a 2 nd laser gas containing krypton, neon and fluorine, the laser gas regeneration device regenerates an exhaust gas discharged from the at least one KrF excimer laser device and supplies the regeneration gas to the at least one KrF excimer laser device, the laser gas regeneration device comprises: a data acquisition unit that acquires data of an exhaust gas amount of a laser gas that is discharged to the outside without being regenerated, from among exhaust gases discharged from at least one KrF excimer laser apparatus; a xenon addition unit that adds a 3 rd laser gas containing krypton, neon, and xenon at a 2 nd concentration higher than a 1 st concentration to the regeneration gas; and a control unit for controlling the amount of the 3 rd laser gas added by the xenon addition unit according to the amount of exhaust gas.
Drawings
Several embodiments of the present disclosure will be described below as simple examples with reference to the drawings.
Fig. 1 schematically shows the structures of an
Fig. 2 is a flowchart illustrating energy control performed by the
Fig. 3 is a flowchart illustrating a process of laser gas control by the
Fig. 4 is a flowchart showing details of the initial setting of the gas control parameters shown in fig. 3.
Fig. 5 is a flowchart showing details of the process of the air pressure control shown in fig. 3.
Fig. 6 is a flowchart showing details of the process of partial gas replacement shown in fig. 3.
Fig. 7 is a flowchart illustrating the processing of the gas
Fig. 8 is a flowchart showing details of an initial setting subroutine of gas regeneration in the comparative example.
Fig. 9 is a flowchart showing details of the gas recovery/pressure increasing subroutine in the comparative example.
Fig. 10 is a flowchart showing details of a gas refining/conditioning subroutine in the comparative example.
Fig. 11 is a flowchart showing details of the inert regeneration gas storage/supply subroutine in the comparative example.
Fig. 12 is a flowchart of the laser gas when the laser gas regeneration is not performed in the comparative example.
Fig. 13 is a flowchart of laser gas used in the laser gas regeneration in the comparative example.
Fig. 14 schematically shows the structures of an
Fig. 15 is a flowchart of the laser gas in embodiment 1.
Fig. 16 is a flowchart showing details of the initial setting subroutine of the gas regeneration in embodiment 1.
Fig. 17 is a flowchart showing details of the gas refining/conditioning subroutine in embodiment 1.
Fig. 18 is a flowchart showing details of initial setting of the gas control parameters in embodiment 2.
Fig. 19 is a flowchart showing details of the process of partial gas replacement in embodiment 2.
Fig. 20 schematically shows the structures of an
Fig. 21 is a flowchart of the laser gas in embodiment 3.
Fig. 22 is a flowchart showing details of the initial setting subroutine of gas regeneration in embodiment 3.
Fig. 23 is a flowchart showing details of the gas refining/conditioning subroutine in embodiment 3.
Fig. 24 is a flowchart showing details of the gas refining/conditioning subroutine in embodiment 4.
Fig. 25 is a flowchart showing details of initial setting of the gas control parameters in embodiment 4.
Fig. 26 is a flowchart showing details of the process of the air pressure control in embodiment 4.
Fig. 27 is a flowchart showing details of the process of partial gas replacement in embodiment 4.
Fig. 28 schematically shows the structures of
Fig. 29 schematically shows the structures of
Fig. 30 schematically shows the structures of an
Fig. 31 schematically shows a 1 st example of a regeneration gas tank that can be used in the above embodiments.
Fig. 32 schematically shows a 2 nd example of a regeneration gas tank that can be used in the above embodiments.
Fig. 33 schematically shows the structure of the
Fig. 34 is a flowchart of the laser gas in embodiment 8 of the present disclosure.
Fig. 35 is a flowchart of the laser gas in the 10 th embodiment of the present disclosure.
Fig. 36 is a graph showing the performance of an ArF excimer laser apparatus using the relationship with the xenon gas concentration.
Fig. 37 is a graph showing the performance of a KrF excimer laser apparatus by using the relationship with the xenon gas concentration.
Fig. 38 is a graph illustrating the set value of the target xenon concentration Cxemt in the 15 th embodiment of the present disclosure.
Detailed Description
Content providing method and apparatus
1. Excimer laser apparatus and laser gas regeneration apparatus of comparative example
1.1 Structure
1.1.1 excimer laser device
1.1.1.1 laser oscillation System
1.1.1.2 laser gas control system
1.1.2 laser gas regeneration device
1.2 actions
1.2.1 actions of laser oscillation System
1.2.1.1 energy control
1.2.2 actions of laser gas control System
1.2.2.1 initial setting of gas control parameters
1.2.2.2 air pressure control
1.2.2.3 partial gas exchange
1.2.3 operation of laser gas regeneration device
1.2.3.1 Main Process
1.2.3.2 initial set subroutine for gas regeneration
1.2.3.3 gas recovery/pressure boost subroutine
1.2.3.4 gas refining/Conditioning subroutine
1.2.3.5 inert regeneration gas storage/supply subroutine
1.3 gas flow
1.4 problems
2. Laser gas regeneration device for adding xenon-containing gas according to supply amount of fluorine-containing gas
2.1 Structure
2.2 actions
2.2.1 derivation of proportionality constants
2.2.2 treatment of the gas regeneration control section
2.3 action
3. Laser gas regeneration device for receiving fluorine-containing gas supply from excimer laser device
3.1 Structure
3.2 treatment of the gas regeneration control section
3.3 treatment of the gas control section
3.4 action
4. Laser gas regeneration device for adding xenon-containing gas according to gas displacement
4.1 Structure
4.2 actions
4.2.1 derivation of proportionality constants
4.2.2 treatment of the gas regeneration control section
4.3 action
5. Laser gas regeneration device for receiving exhaust gas volume from excimer laser device
5.1 Structure
5.2 treatment of the gas regeneration control section
5.3 treatment of the gas control section
5.4 action
6. Laser gas regenerator connected to multiple laser devices (example 1)
6.1 Structure
6.2 actions
6.3 action
7. Laser gas regeneration apparatus connected to a plurality of laser devices (example 2)
7.1 Structure and actions
7.2 action
8. Configuration of xenon addition part
8.1 Structure
8.2 action
9. Examples of regeneration gas tanks
9.1 example 1
9.1.1 structures
9.1.2 actions and actions
9.2 example 2
9.2.1 structures
9.2.2 actions and actions
10. Others
KrF excimer laser apparatus
12. Range of xenon concentration for improved performance of laser device
12.1 ArF excimer laser device Performance
Performance of 12.2 KrF excimer laser device
13. Target xenon concentration Cxemt taking into account reduction in xenon concentration
13.1 relationship between xenon concentration Cxe1 of inert new gas and target xenon concentration Cxemt
13.2 determination of the amount of xenon-containing gas added Qxe based on the amount of fluorine-containing gas Qf2 supplied
13.3 determination of the amount of xenon-containing gas Qxe based on the amount of emitted laser gas Qex
Embodiments of the present disclosure will be described in detail below with reference to the drawings. The embodiments described below are merely examples of the present disclosure and do not limit the present disclosure. Note that the structures and operations described in the embodiments are not necessarily all necessary for the structures and operations of the present disclosure. The same components are denoted by the same reference numerals, and redundant description thereof is omitted.
1. Excimer laser apparatus and laser gas regeneration apparatus of comparative example
1.1 Structure
Fig. 1 schematically shows the structures of an
1.1.1 excimer laser device
The
The
The
1.1.1.1 laser oscillation System
The laser oscillation system 32 includes a
The
The
The narrowing module 14 comprises a
The cavity pressure sensor P1 is configured to measure the gas pressure within the
The power monitor 17 includes a beam splitter 17a, a condenser lens 17b, and a
1.1.1.2 laser gas control system
The laser
The
In the present embodiment, the
The
The
The
The
The
The
The
1.1.2 laser gas regeneration device
The laser
In the laser
The laser
In the present embodiment, the
The
The
The
The
The
The
The
The xenon concentration detector 79 is configured to measure the xenon concentration of the inert regeneration gas that has passed through the
The mass flow controller MFC1 includes a mass flow meter and valves, not shown. The opening degree of the valve is controlled based on the flow rate measured by the mass flow meter. Thus, the mass flow controller MFC1 controls the flow of the inert regeneration gas.
The
One end of the
The xenon-containing
The
The mass flow controller MFC2 includes a mass flow meter and valves, not shown. The opening degree of the valve is controlled based on the flow rate measured by the mass flow meter. Thereby, the mass flow controller MFC2 controls the flow rate of the xenon-containing gas passing through the
At the connection portion between the
The
The filter 83 is a mechanical filter that traps particles contained in the inert regeneration gas supplied from the
1.2 actions
1.2.1 actions of laser oscillation System
The
The
When a high voltage is applied between the pair of discharge electrodes 11a and 11b, a discharge is caused between the pair of discharge electrodes 11a and 11 b. By the energy of this discharge, the laser gas in the
Light generated in the
The
In this way, the light emitted from the
The power monitor 17 detects the pulse energy of the laser light output from the
The
1.2.1.1 energy control
Fig. 2 is a flowchart illustrating energy control performed by the
First, in S11, the
Next, in S12, the
Next, in S13, the
In S14, the
Next, in S15, the
ΔE=E-Et
Next, in S16, the
V=V-Vk·ΔE
Here, Vk is a coefficient for calculating how much the charging voltage V should be changed when the pulse energy is desired to be changed by Δ E. By updating and setting the value of the charging voltage V to the
Next, in S17, the
Next, in S18,
1.2.2 actions of laser gas control System
Fig. 3 is a flowchart illustrating a process of laser gas control by the
First, in S1100, the
Next, in S1200, the
Next, in S1300, the
When the laser
When the laser
In S1400, the
In S1500, the
In S1600,
Next, in S1700,
When charging voltage V is smaller than 1 st threshold value Vmin or larger than 2 nd threshold value Vmax (S1700: no),
When charging voltage V is not less than 1 st threshold value Vmin and not more than 2 nd threshold value Vmax (S1700: yes),
In S1800, the
In S1900, the
When the value of the timer T is equal to or greater than the partial gas replacement cycle Tpg (no in S1900), the
If the value of the timer T is smaller than the partial gas replacement cycle Tpg (yes in S1900), the
In S2000, the
After S2000, in S2100, the
In S2200, the
1.2.2.1 initial setting of gas control parameters
Fig. 4 is a flowchart showing details of the initial setting of the gas control parameters shown in fig. 3. The process shown in fig. 4 is performed by the
First, in S1101, the
Next, in S1102, the
Next, in S1103, the
Next, in S1104, the
Next, in S1105, the
After S1105, the
1.2.2.2 air pressure control
Fig. 5 is a flowchart showing details of the process of the air pressure control shown in fig. 3. The process shown in fig. 5 is performed by the
First, in S1801,
When the charging voltage V is lower than the 1 st threshold value Vmin, the
When the charging voltage V is higher than the 2 nd threshold Vmax, the
1.2.2.3 partial gas exchange
Fig. 6 is a flowchart showing details of the process of partial gas replacement shown in fig. 3. The process shown in fig. 6 is performed by the
The process of partial gas replacement described here includes a process of replacing a part of the laser gas in the
When the
The decrease in the fluorine gas concentration in the laser gas in the
Therefore, by the partial gas replacement described below, the fluorine gas concentration in the laser gas in the
First, in S2001, the
Next, in S2002, the
ΔPbg=Kbg·N
Here, Kbg is the inert gas supply coefficient.
Next, in S2003, the
Next, in S2004, the
ΔPhg=Khg·N
Here, Khg denotes the fluorine-containing gas supply coefficient. The fluorine-containing gas supply coefficient Khg is obtained as the total value of the 1 st coefficient and the 2 nd coefficient, for example. The 1 st coefficient is a coefficient for calculating the 1 st fluorine-containing gas supply amount required to equalize the partial pressure of fluorine gas before and after the partial gas replacement. The 2 nd coefficient is a coefficient for calculating the 2 nd fluorine-containing gas supply amount required for replenishing the fluorine gas consumed by 1 discharge.
Next, in S2005, the
Next, in S2006, the
After S2006, the
The above partial gas replacement treatment has the following effects.
1 st, fluorine gas mainly consumed by discharge in the
2 nd, a predetermined amount of gas containing less impurities can be supplied to the
1.2.3 operation of laser gas regeneration device
Referring again to fig. 1, the laser
The gas
The
The
The
The
The
The pressure-increasing
The xenon concentration measuring device 79 sends the measured xenon concentration to the gas
The flow rate of the mass flow controller MFC1 is set by the gas
In the
The
The filter 83 traps particles generated in the laser
The supply of the inert regeneration gas from the gas purification flow path to the
The opening and closing of the valve B-V2 controls the supply of the inert fresh gas from the inert gas supply source B to the
The gas
1.2.3.1 Main Process
Fig. 7 is a flowchart illustrating the processing of the gas
First, in S100, the gas
After S100, the gas
In S200, the gas
In S300, the gas
In S400, the gas
After S200, S300, and S400, the gas
When the regeneration of the laser gas is not stopped (no in S600), the gas
When the regeneration of the laser gas is stopped (yes in S600), the gas
In S700, the gas
After S700, the gas
1.2.3.2 initial set subroutine for gas regeneration
Fig. 8 is a flowchart showing details of an initial setting subroutine of gas regeneration in the comparative example. The processing shown in fig. 8 is performed by the gas
First, in S101, the gas
Subsequently, in S102, the gas
Next, in S103, the
Next, in S104, the gas
Next, in S105, the gas
1.2.3.3 gas recovery/pressure boost subroutine
Fig. 9 is a flowchart showing details of the gas recovery/pressure increasing subroutine in the comparative example. The process shown in fig. 9 is performed by the gas
First, in S201, the
Next, in S202, the gas
When the pressure P2 is equal to or lower than the predetermined value P2min, or when the pressure P3 is higher than the predetermined value P3max2 (S202: no), the gas
When the pressure P2 is higher than the predetermined value P2min and the pressure P3 is equal to or lower than the predetermined value P3max2 (yes in S202), the gas
In S203, the gas
In S204, the gas
After S203 or S204, the gas
1.2.3.4 gas refining/Conditioning subroutine
Fig. 10 is a flowchart showing details of a gas refining/conditioning subroutine in the comparative example. The process shown in fig. 10 is performed by the gas
First, in S301, the
Next, in S308, the gas
When the pressure P3 is equal to or lower than the predetermined value P3max, or when the pressure P4 is higher than the predetermined value P4max (no in S308), the gas
When the pressure P3 is higher than the predetermined value P3max and the pressure P4 is equal to or lower than the predetermined value P4max (yes in S308), the gas
In S309, the
After S309, the gas
In S310, the gas
Next, in S311, the gas
R=(Cxem-Cxet)/(Cxet-Cxeb)
Here, Cxeb is the xenon concentration of the xenon-containing gas added to the inert regeneration gas. Cxet is the target xenon concentration for the inert regeneration gas after xenon addition.
The target xenon concentration Cxet is the same as the xenon concentration of the inert new gas supplied from the inert gas supply source B.
Next, in S312, the gas
MFC1=Qr
MFC2=R·Qr
Thereby, the inert regeneration gas and the xenon-containing gas flow into the connection portion of the
After S312, the gas
The above flow rate ratio R is derived as follows.
First, variables are set as follows.
And Qr: mass flow controller MFC1 flow for Cxet target xenon concentration
Qxeb: mass flow controller MFC2 flow for Cxet target xenon concentration
Cxem: xenon concentration of inert regeneration gas prior to xenon addition
Cxeb: xenon concentration of xenon-containing gas added to inert regeneration gas
The flow rate of the inert regeneration gas after xenon addition at the connection portion between the
The amount of xenon contained in the inert regeneration gas after xenon addition is (Cxeb · Qxeb + Cxem · Qr).
Therefore, the following equation is given so that the xenon concentration of the inert regeneration gas after xenon addition is equal to the target xenon concentration Cxet.
Cxet=(Cxeb·Qxeb+Cxem·Qr)/(Qxeb+Qr)
According to Qxeb ═ R · Qr, the equation is modified as described below.
Cxet=(Cxeb·R+Cxem)/(R+1)
When R is obtained from this equation, the following is described.
R=(Cxem-Cxet)/(Cxet-Cxeb)
1.2.3.5 inert regeneration gas storage/supply subroutine
Fig. 11 is a flowchart showing details of the inert regeneration gas storage/supply subroutine in the comparative example. The process shown in fig. 11 is performed by the gas
First, in S401, the gas
Next, in S402, the gas
When the pressure P4 is equal to or lower than the predetermined value P4min (no in S402), the gas
When the pressure P4 is higher than the predetermined value P4min (yes in S402), the gas
In S403, the gas
After S403, in S404, the gas
In S405, the gas
After S405, in S406, the gas
After S404 or S406, the gas
1.3 gas flow
Fig. 12 is a flowchart of the laser gas when the laser gas regeneration is not performed in the comparative example. As described above, the fluorine-containing gas in which fluorine gas, argon gas, and neon gas are mixed is supplied from the fluorine-containing gas supply source F2 to the
An impurity gas is generated in the
Instead of the laser gas discharged from the
Since all the laser gas supplied to the
Fig. 13 is a flowchart of laser gas used in the laser gas regeneration in the comparative example. As described above, in the case where the valve EX-V2 is opened and the valve C-V1 is closed, the laser gas discharged from the
A part of the laser gas discharged from the
1.4 problems
The optimum xenon gas concentration in the ArF excimer laser apparatus is, for example, about 10 ppm. In such a low concentration region, it is not easy to adjust the xenon concentration.
In the above comparative example, the xenon concentration of the inert regeneration gas was measured, but in order to measure the xenon concentration, it was sometimes necessary to install an expensive gas analyzer having a large space.
As another example, consider the following method: almost all xenon gas is trapped in the inert regeneration gas, and then a predetermined amount of xenon gas is added. However, in this case, a trapping device for trapping xenon gas is newly required.
As yet another example, a method of adding xenon in the case where the laser performance deteriorates is considered. However, in this case, there is a problem that laser performance is unstable because no measures can be taken after laser performance deteriorates.
In the embodiment described below, the laser
2. Laser gas regeneration device for adding xenon-containing gas according to supply amount of fluorine-containing gas
2.1 Structure
Fig. 14 schematically shows the structures of an
The inert gas supply source B corresponds to the 1 st laser gas supply source in the present disclosure. The fluorine-containing gas supply source F2 corresponds to the 2 nd laser gas supply source in the present disclosure. The xenon-containing gas is equivalent to the 3 rd laser gas in this disclosure.
In embodiment 1, the xenon concentration detector 79 may not be provided.
Otherwise, the structure of embodiment 1 is the same as that of the comparative example.
2.2 actions
Fig. 15 is a flowchart of the laser gas in embodiment 1. The mass flow meter MFMf2 measures the supply amount Qf2 of the fluorine-containing gas supplied from the fluorine-containing gas supply source F2, and transmits the measured amount to the
Qxe ═ α · Qf2 (formula 1)
Here, α is a proportionality constant for calculating the addition amount Qxe of the xenon-containing gas.
2.2.1 derivation of proportionality constants
The above proportional constant α is derived as described below.
Here, the xenon concentration when the inert regeneration gas before xenon addition, the xenon-containing gas supplied from the xenon-containing
First, variables are set as follows.
Qxe: the amount of xenon-containing gas added to the inert regeneration gas to obtain the target xenon concentration Cxect
Cxeb: xenon concentration of xenon-containing gas added to inert regeneration gas
Qf 2: amount of fluorine-containing gas supplied from fluorine-containing gas supply source F2 to
The total of the supply amount Qf2 of the fluorine-containing gas and the addition amount Qxe of the xenon-containing gas is (Qf2+ Qxe).
The amount of xenon contained in the xenon-containing gas is Cxeb · Qxe.
The amount of xenon contained in the fluorine-containing gas was approximately 0.
Therefore, the following equation is given so that the xenon concentration when the fluorine-containing gas and the xenon-containing gas are assumed to be mixed is equal to the target xenon concentration Cxect.
Cxect=(0+Cxeb·Qxe)/(Qf2+Qxe)
According to equation 1, this equation is modified as described below.
Cxect=α·Cxeb/(1+α)
When α is obtained from this expression, the following is performed.
α=Cxect/(Cxeb-Cxect)
For example, when the target xenon concentration Cxect is 10ppm and the xenon concentration Cxeb of the xenon-containing gas is 10000ppm, the proportionality constant α is as follows.
α=10/(10000-10)=1/999
The xenon-containing gas has a xenon gas concentration Cxeb not limited to 10000 ppm. The xenon-containing gas preferably has a xenon gas concentration Cxeb of 10000ppm to 200000 ppm.
2.2.2 treatment of the gas regeneration control section
Fig. 16 is a flowchart showing details of the initial setting subroutine of the gas regeneration in embodiment 1. Fig. 17 is a flowchart showing details of the gas refining/conditioning subroutine in embodiment 1.
Instead of the initial setting subroutine of the gas regeneration in the comparative example described with reference to fig. 8 and the gas purification/conditioning subroutine in the comparative example described with reference to fig. 10, the following processing is performed in embodiment 1. The main flow and other processes described with reference to fig. 7 are the same as those of the comparative example.
In fig. 16, the processing of S101 to S105 is the same as the comparative example.
When the gas regeneration command signal is received in S105, the
Next, in S107a, the
Next, in S108a, the
After S108a, the gas
In fig. 17, the process of S301 is the same as the comparative example.
Next, in S302a, the
When the value of the timer Tf2 exceeds the measurement period Kf2 of the supply amount of fluorine-containing gas (S302 a: no), the
If the value of the timer Tf2 is equal to or less than the measurement cycle Kf2 of the supply amount of fluorine-containing gas (S302 a: yes), the
In S303a, the
Next, in S304a, the
Next, in S305a, the gas
Next, in S306a, the gas
Next, in S307a, the gas
After S307a, the gas
The processing of S308 branched from S302a is the same as the comparative example.
When the pressure P3 is equal to or lower than the predetermined value P3max, or when the pressure P4 is higher than the predetermined value P4max (no in S308), the gas
When the pressure P3 is higher than the predetermined value P3max and the pressure P4 is equal to or lower than the predetermined value P4max (yes in S308), the gas
In S309a, the
MFC1=0
MFC2=α·Qf2/Kf2
The flow rate MFC2 of the mass flow controller MFC2 was obtained by dividing the amount of xenon-containing gas added, α · Qf2, by the measurement period Kf 2. In the measurement period Kf2, the xenon-containing gas can be added to the inert regeneration gas in an amount of α · Qf2 by flowing the xenon-containing gas at the flow rate MFC 2.
In S312a, the gas
MFC1=Qr
MFC2=α·Qf2/Kf2
The flow rate Qr of the mass flow controller MFC1 is a positive number, and the magnitude of the value is not particularly limited. The ratio of the flow Qr of the mass flow controller MFC1 and the flow MFC2 of the mass flow controller MFC2 may not be fixed values.
The flow MFC2 of the mass flow controller MFC2 has the same value as set in S309 a.
After S309a or S312a, the gas
As shown in fig. 7, the gas
2.3 action
According to embodiment 1, the amount of xenon-containing gas added to the inert regeneration gas is controlled based on the fluorine-containing gas supply amount Qf2 measured by the mass flow meter MFMf 2. This makes it possible to adjust the concentration of xenon in the
3. Laser gas regeneration device for receiving fluorine-containing gas supply from excimer laser device
Fig. 18 is a flowchart showing details of initial setting of the gas control parameters in embodiment 2. Fig. 19 is a flowchart showing details of the process of partial gas replacement in embodiment 2.
3.1 Structure
The laser
3.2 treatment of the gas regeneration control section
The process of the gas
However, the gas
In S107a in fig. 16 and S307a in fig. 17, a signal indicating that the measured value Qf2m of the fluorine-containing gas supply amount is reset is sent to the
3.3 treatment of the gas control section
Instead of the initial setting of the gas control parameters in the comparative example described with reference to fig. 4 and the partial gas replacement in the comparative example described with reference to fig. 6, the following processing is performed in embodiment 2. The main process and the processing of the other
In fig. 18, the processing of S1101 to S1105 is the same as that of the comparative example.
Next, in S1106b, the
After S1106b, the
In fig. 19, the processing of S2001 to S2006 is the same as that of the comparative example.
Next, in S2006, in S2008b, the
Qf2m=Qf2m+ΔPhg·Vch
Here, Vch is the volume of the laser cavity 10.Δ Phg is the fluorine-containing gas supply amount Δ Phg supplied to the
Next, in S2009b, the
3.4 action
According to embodiment 2, the amount of xenon-containing gas added to the inert regeneration gas is controlled based on the measured value Qf2m of the amount of fluorine-containing gas supplied from the
Alternatively, a mass flow meter for measuring the measured value Qf2m of the fluorine-containing gas supply amount may be provided in the
When the
4. Laser gas regeneration device for adding xenon-containing gas according to gas displacement
4.1 Structure
Fig. 20 schematically shows the structures of an
In embodiment 3, the xenon concentration detector 79 may not be provided.
Otherwise, the structure of embodiment 3 is the same as that of the comparative example.
4.2 actions
Fig. 21 is a flowchart of the laser gas in embodiment 3. The mass flow meter MFMex measures the exhaust gas amount Qex of the laser gas discharged from the
Qxe Beta Qex (formula 2)
Here, β is a proportionality constant for calculating the addition amount Qxe of the xenon-containing gas.
4.2.1 derivation of proportionality constants
The above proportional constant β is derived as follows.
Here, the amount of xenon trapped by the
In the steady state, the amount of laser gas present in the laser
First, variables are set as follows.
Qxe: the amount of xenon-containing gas added to the inert regeneration gas to obtain the target xenon concentration Cxect
Qf 2: amount of fluorine-containing gas supplied from fluorine-containing gas supply source F2 to
Cf 2: fluorine gas concentration of fluorine-containing gas supplied from fluorine-containing gas supply source F2
In the
F2(gas) + CaO (solid) → CaF2(solid) +1/2O2(gas)
The amount of fluorine gas contained in the laser gas discharged from the
Therefore, the discharge amount Qex of the laser gas can be expressed by the following equation.
Qex=Qf2-Qf2·Cf2+1/2·Qf2·Cf2
=Qf2(1-1/2·Cf2)
Therefore, the supply amount Qf2 of the fluorine-containing gas can be expressed by the following equation.
Qf2=Qex/(1-1/2·Cf2)
According to this equation and the above equation 1, the xenon addition amount Qxe is given by the following equation.
Qxe={α/(1-1/2·Cf2)}Qex
When β is α/(1-1/2 · Cf2), the above formula 2 is obtained.
4.2.2 treatment of the gas regeneration control section
Fig. 22 is a flowchart showing details of the initial setting subroutine of gas regeneration in embodiment 3. Fig. 23 is a flowchart showing details of the gas refining/conditioning subroutine in embodiment 3.
In embodiment 3, the following processing is performed instead of the initial setting subroutine of the gas regeneration in the comparative example described with reference to fig. 8 and the gas purification/conditioning subroutine in the comparative example described with reference to fig. 10. The main flow and other processes described with reference to fig. 7 are the same as those of the comparative example.
In fig. 22, the processing of S101 to S105 is the same as the comparative example.
When the gas regeneration command signal is received in S105, the processing of S106c to S108c is the same as the processing of S106a to S108a in embodiment 1. However, the following points are different from embodiment 1.
(1) Instead of the timer Tf2, a timer Tex for measuring a measurement cycle Kex of the exhaust gas amount is used.
(2) Instead of the measured value Qf2m of the fluorine-containing gas supply amount, the measured value Qexm of the exhaust gas amount was used.
(3) Instead of the supply amount Qf2 of the fluorine-containing gas, the exhaust amount Qex was used.
After S108c, the gas
In fig. 23, the processing of S301 and S308 is the same as the comparative example.
Next, the processing of S302c to S307c, S309c, and S312c is the same as the processing of S302a to S307a, S309a, and S312a in embodiment 1. However, the following points are different from embodiment 1.
(1) The differences between (1) and (3) are the same as those described with reference to fig. 22.
(4) Instead of the proportionality constant α, a proportionality constant β is used.
(5) Instead of the measurement period Kf2 of the supply amount of the fluorine-containing gas, the measurement period Kex of the exhaust amount was used. The measurement period Kex is, for example, 8 minutes to 16 minutes.
After S309c or S312c, the gas
4.3 action
According to embodiment 3, the amount of xenon-containing gas added to the inert regeneration gas is controlled in accordance with the discharge amount Qex of the laser gas. This makes it possible to adjust the concentration of xenon in the
5. Laser gas regeneration device for receiving exhaust gas volume from excimer laser device
Fig. 24 is a detailed flowchart showing a gas refining/conditioning subroutine in embodiment 4.
Fig. 25 is a flowchart showing details of initial setting of the gas control parameters in embodiment 4. Fig. 26 is a flowchart showing details of the process of the air pressure control in embodiment 4. Fig. 27 is a flowchart showing details of the process of partial gas replacement in embodiment 4.
5.1 Structure
The laser
5.2 treatment of the gas regeneration control section
Instead of the gas purification/conditioning subroutine in embodiment 3 described with reference to fig. 23, embodiment 4 performs the following processing. Other processes are the same as those in embodiment 3.
In fig. 24, the processing of S301, S302c, S304c to S306c, and S308 is the same as that of embodiment 3.
After S302c, in S303d, the
After S306c, in S307d, the
After S308, in S309d, the
MFC1=0
MFC2=α·Qex/Kex
That is, although the proportionality constant β is used to calculate the flow rate MFC2 of the mass flow controller MFC2 in embodiment 3, the proportionality constant α is used in embodiment 4. This is because the data of the purge amount Qex used by the
In S312d, the gas
MFC1=Qr
MFC2=α·Qex/Kex
After S309d or S312d, the gas
5.3 treatment of the gas control section
Instead of the initial setting of the gas control parameter in the comparative example described with reference to fig. 4, the gas pressure control in the comparative example described with reference to fig. 5, and the partial gas replacement in the comparative example described with reference to fig. 6, the following processing is performed in embodiment 4. The main process and the processing of the other gas control units described with reference to fig. 3 are the same as in the comparative example.
In fig. 25, the processing of S1101 to S1105 is the same as that of the comparative example and embodiment 3.
Next, in S1105, in S1106d, the
After S1106d, the
In fig. 26, the processing of S1801, S1802, and S1803 is the same as that of the comparative example and embodiment 3. In embodiment 4, the difference between the comparative example and embodiment 3 is that the measured value Qxem of the amount of exhaust gas is updated after the atmospheric pressure is reduced in S1802.
After S1802, in S1804d, the
When the valve C-V1 is opened or the valve EX-V2 is closed (S1804 d: no), the
When the valve C-V1 is closed and the valve EX-V2 is opened (S1804 d: YES), the
In S1805d, the
Qexm=Qexm+ΔPt·Vch
Here, Vch is the volume of the laser cavity 10.Δ Pt is a change in gas pressure in the gas pressure control, and is a change in gas pressure corresponding to the amount of exhaust gas discharged from the
Next, in S1806d, the
In fig. 27, the processing of S2001 to S2006 is the same as that of the comparative example and embodiment 3.
Next, in S2006, in S2007d, the
When the valve C-V1 is opened or the valve EX-V2 is closed (S2007 d: no), the
When the valve C-V1 is closed and the valve EX-V2 is opened (S2007 d: yes), the
In S2008d, the
Qexm=Qexm+(ΔPbg+ΔPhg)·Vch
Here, Vch is the volume of the laser cavity 10.Δ Pbg + Δ Phg is the amount of change in gas pressure corresponding to the amount of exhaust gas discharged from the
Next, in S2009d, the
5.4 action
According to embodiment 4, the amount of xenon-containing gas added to the inert regeneration gas is controlled based on the measured value Qexm of the amount of exhaust gas received from the
Alternatively, a mass flow meter for measuring the measurement value Qexm of the exhaust amount of the laser gas may be provided inside the
6. Laser gas regenerator connected to multiple laser devices (example 1)
6.1 Structure
Fig. 28 schematically shows the structures of
Embodiment 5 corresponds to the case where the laser
The
The
The
The gas
Otherwise, the structure is the same as that of embodiment 1.
6.2 actions
The operation of each of the plurality of
The laser
The laser
When the laser
6.3 action
According to embodiment 5, the laser
According to embodiment 5, the amount of xenon-containing gas added to the inert regeneration gas is controlled based on the fluorine-containing gas supply amount Qf2 measured by the mass flow meter MFMf 2. This makes it possible to adjust the concentration of xenon in the
The fluorine-containing gas supply amount Qf2 is not limited to being measured by the mass flow meter MFMf2, and may be obtained by summing the fluorine-containing gas supply amounts received from a plurality of excimer laser devices. In this case, the mass flow meter MFMf2 may not be provided.
Further, the mass flow meter MFMf2 is not limited to the case where it is disposed in the
7. Laser gas regeneration apparatus connected to a plurality of laser devices (example 2)
7.1 Structure and actions
Fig. 29 schematically shows the structures of
Embodiment 6 corresponds to the case where the laser
The
Otherwise, the structure is the same as that of embodiment 5.
Here, the mass flow meter MFMex may be included in the laser
7.2 action
According to embodiment 6, the amount of xenon-containing gas added to the inert regeneration gas is controlled based on the amount Qex of the laser gas discharged measured by the mass flow meter MFMex. This makes it possible to adjust the concentration of xenon in the
The exhaust amount Qex of the laser gas is not limited to being measured by the mass flow meter MFMex, and may be obtained by summing the exhaust amounts of the laser gases received from a plurality of excimer laser apparatuses. In this case, the mass flow meter MFMex may not be provided.
Further, the mass flow meter MFMex is not limited to the case where it is disposed in the
8. Configuration of xenon addition part
8.1 Structure
Fig. 30 schematically shows the structures of an
Otherwise, the same as embodiment 1 is applied.
8.2 action
The
Fig. 30 corresponds to the case where the arrangement of the
Fig. 30 shows a case where the
9. Examples of regeneration gas tanks
9.1 example 1
9.1.1 structures
Fig. 31 schematically shows a 1 st example of a regeneration gas tank that can be used in the above embodiments. The
One end of the
One end of the
9.1.2 actions and actions
The inert regeneration gas introduced from the one end of the
The inert regeneration gas inside the
According to the structure shown in fig. 31, the inert regeneration gas to which the xenon-containing gas is added is supplied to the
Fig. 31 shows an example of the regeneration gas tank, but a mixer having the same configuration as that in fig. 31 may be disposed in a flow path to which an inert regeneration gas containing xenon gas is added, unlike the regeneration gas tank.
9.2 example 2
9.2.1 structures
Fig. 32 schematically shows a 2 nd example of a regeneration gas tank that can be used in the above embodiments. The regeneration gas tank 81b shown in fig. 32 includes a container 814, a gas introduction pipe 815 and a gas discharge pipe 816 inserted into the container 814, and a propeller shaft 817. An inert gas pressure sensor P4 is also connected to the container 814.
One end of each of the gas introduction tube 815 and the gas delivery tube 816 is located outside the container 814, and the other end of each of the gas introduction tube 815 and the gas delivery tube 816 is located inside the container 814.
One end of the propeller shaft 817 is located outside the container 814, and the other end of the propeller shaft 817 is located inside the container 814. Inside the container 814, a propeller 818 is mounted on a propeller shaft 817. Outside the vessel 814, a motor 819 is mounted to the propeller shaft 817. The agitator is formed by a propeller shaft 817, a propeller 818 and a motor 819. The shape of the propeller 818 is not particularly limited.
9.2.2 actions and actions
The inert regeneration gas introduced from the above-mentioned one end of the gas introduction pipe 815 is introduced into the interior of the container 814.
As the motor 819 rotates the propeller shaft 817, the propeller 818 is rotated and the inert regeneration gas is mixed inside the vessel 814.
The inert regeneration gas inside the vessel 814 is discharged to the outside of the vessel 814 through the gas discharge pipe 816.
According to the structure shown in fig. 32, the inert regeneration gas to which the xenon-containing gas is added is supplied to the
Fig. 32 shows an example of the regeneration gas tank, but a mixer having the same configuration as that in fig. 32 may be disposed in a flow path to which an inert regeneration gas containing xenon gas is added, unlike the regeneration gas tank.
10. Others
Fig. 33 schematically shows the structure of the
In fig. 33, the
In the present specification, the case of controlling two gases including the replacement of a part of the laser gas in the
KrF excimer laser apparatus
In embodiments 1 to 7, the case where the
The KrF excimer laser apparatus and the laser
The fluorine-containing gas supplied from the fluorine-containing gas supply source F2 is, for example, a laser gas in which fluorine gas, krypton gas, and neon gas are mixed. The gas composition ratio of the fluorine-containing gas supply source F2 may be, for example, 1% for fluorine gas, 3.5% for krypton gas, and the balance neon gas.
The inert new gas supplied from the inert gas supply source B is, for example, a laser gas containing a small amount of xenon in addition to krypton and neon. The gas composition ratio of the inert gas supply source B may be, for example, 10ppm of xenon, 3.5% of krypton, and the balance neon.
The xenon-containing gas supplied from the xenon-containing
Fig. 34 is a flowchart of the laser gas in embodiment 8 of the present disclosure. Embodiment 8 includes a KrF excimer laser apparatus and a laser
Otherwise, embodiment 8 is the same as embodiment 1.
Embodiment 9 of the present disclosure is not particularly shown, but is the same as embodiment 2 except that the ArF excimer laser apparatus is replaced with a KrF excimer laser apparatus in embodiment 2.
Fig. 35 is a flowchart of the laser gas in the 10 th embodiment of the present disclosure. The 10 th embodiment includes a KrF excimer laser apparatus and a laser
Otherwise, the 10 th embodiment is the same as the 3 rd embodiment.
Although not particularly shown in embodiments 11 to 14 of the present disclosure, the present disclosure is the same as embodiments 4 to 7 except that the ArF excimer laser apparatus is replaced with a KrF excimer laser apparatus in embodiments 4 to 7, respectively.
In the laser gas regeneration devices according to embodiments 8 to 14, the
The KrF excimer laser apparatus according to the 8 th to 14 th embodiments can also be used in the
The performance of a KrF excimer laser apparatus using a laser gas containing a small amount of xenon gas will be described later with reference to fig. 37.
12. Range of xenon concentration for improved performance of laser device
12.1 ArF excimer laser device Performance
Fig. 36 is a graph showing the performance of an ArF excimer laser apparatus using the relationship with the xenon gas concentration. FIG. 36 shows the results of measuring the performance of an ArF excimer laser apparatus with the repetition rate of a pulsed laser set at 6 kHz. The performance of an ArF excimer laser apparatus includes the average pulse energy Ep and the pulse energy stability E σ. The average pulse energy Ep is expressed by a ratio to the average pulse energy at a xenon concentration of 0 ppm. The pulse energy stability E σ is, for example, a value calculated as described below using the average pulse energy Ep and the standard deviation σ.
Eσ=σ/Ep
The smaller the value of the pulse energy stability E σ, the smaller the deviation of the pulse energy, indicating more stability.
As described below, when a small amount of xenon gas is contained in the
(1) Xenon concentration of about 10ppm
The highest average pulse energy Ep is obtained.
(2) Xenon concentration of 1ppm to 90ppm
The average pulse energy Ep is higher than the average pulse energy at a xenon concentration of 0 ppm.
(3) Xenon concentration of 3ppm to 50ppm
The average pulse energy Ep is higher than 1.3 times the average pulse energy at a xenon concentration of 0 ppm.
(4) Xenon concentration of 4-30 ppm
The average pulse energy Ep is higher than 1.4 times the average pulse energy at a xenon concentration of 0 ppm.
(5) Xenon concentration of 6-13 ppm
The average pulse energy Ep is higher than 1.5 times the average pulse energy at a xenon concentration of 0 ppm.
(6) In any of the above cases (1) to (5), the pulse energy stability E σ is improved as compared with the case where the xenon gas concentration is 0 ppm.
The target xenon gas concentration Cxemt described later with reference to fig. 38 is set within any one of the above-described ranges (1) to (5), for example.
Performance of 12.2 KrF excimer laser device
Fig. 37 is a graph showing the performance of a KrF excimer laser apparatus by using the relationship with the xenon gas concentration. FIG. 37 shows the results of measuring the performance of a KrF excimer laser apparatus with the repetition rate of a pulsed laser set at 6 kHz. The performance of a KrF excimer laser apparatus includes the average pulse energy Ep and the pulse energy stability E σ. The calculation method of the average pulse energy Ep and the pulse energy stability E σ is the same as that described with respect to the performance of the ArF excimer laser apparatus.
As described below, when a small amount of xenon gas is contained in the
(1) Xenon concentration of about 6ppm
The highest average pulse energy Ep is obtained.
(2) Xenon concentration of 1ppm to 50ppm
The average pulse energy Ep is higher than the average pulse energy at a xenon concentration of 0 ppm.
(3) Xenon concentration of 2-30 ppm
The average pulse energy Ep is higher than 1.03 times the average pulse energy at a xenon concentration of 0 ppm.
(4) Xenon concentration of 3-20 ppm
The average pulse energy Ep is higher than 1.05 times the average pulse energy at a xenon concentration of 0 ppm.
(5) In any of the above cases (1) to (4), the pulse energy stability E σ is improved as compared with the case where the xenon gas concentration is 0 ppm.
Particularly, when the xenon gas concentration is 6ppm or more, the pulse energy stability E σ is greatly improved. Therefore, the xenon gas concentration range in which both the average pulse energy Ep and the pulse energy stability E σ are improved is preferably 6ppm or more and 50ppm or less.
The target xenon gas concentration Cxemt described later with reference to fig. 38 is set within any one of the above-described ranges (1) to (4), for example.
13. Target xenon concentration Cxemt taking into account reduction in xenon concentration
Fig. 38 is a graph illustrating the set value of the target xenon concentration Cxemt according to
In
13.1 relationship between xenon concentration Cxe1 of inert new gas and target xenon concentration Cxemt
The target xenon concentration Cxemt is set within the range of the xenon concentration at which the performance of the laser device is improved. The xenon concentration at which the performance of the laser device is improved is, for example, the xenon concentration described with reference to fig. 36 or 37.
Further, the target xenon gas concentration Cxemt is set to a value higher than the xenon gas concentration Cxe1 of the new inert gas supplied from the inert gas supply source B.
In the ArF excimer laser apparatus, the xenon concentration at which the performance of the laser apparatus is improved is, for example, 90ppm or less. Therefore, the target xenon gas concentration Cxemt is preferably set to a value higher than the xenon gas concentration Cxe1 of the inert new gas and within a range of 90ppm or less.
In a KrF excimer laser apparatus, the xenon concentration at which the performance of the laser apparatus is improved is, for example, 50ppm or less. Therefore, the target xenon gas concentration Cxemt is preferably set to a value higher than the xenon gas concentration Cxe1 of the inert new gas and within a range of 50ppm or less.
The xenon concentration Cxe1 of the inert new gas is set within the range of xenon concentration in which the performance of the laser device is improved. The xenon concentration at which the performance of the laser device is improved is, for example, the xenon concentration described with reference to fig. 36 or 37. However, the xenon concentration Cxe1 of the inert new gas is a lower value than the target xenon concentration Cxemt.
In the ArF excimer laser apparatus, the xenon gas concentration Cxe1 of the inert new gas is, for example, 6ppm or more and 13ppm or less, preferably 8ppm or more and 12ppm or less.
In the KrF excimer laser apparatus, the xenon gas concentration Cxe1 of the new inert gas is, for example, 6ppm to 25ppm, preferably 8ppm to 15 ppm.
Otherwise,
Next, the reason why the target xenon gas concentration Cxemt is set to a value higher than the xenon gas concentration Cxe1 of the inert new gas will be described.
Unlike the case of using an expensive xenon concentration measuring instrument as in the comparative example, the present disclosure can estimate the necessary amount of xenon-containing gas Qxe from the supply amount Qf2 of the fluorine-containing gas or the exhaust amount Qex of the laser gas. Therefore, if the amount of xenon trapped by the
However, in the laser
On the other hand, as described with reference to fig. 36 and 37, as the xenon concentration for improving the performance of the laser device, there may be a certain allowable range.
Therefore, in
For example, before the operation of the laser
The target xenon concentration Cxemt is set to a value higher than the xenon concentration Cxe1 of the inert new gas, and the laser
13.2 determination of the amount of xenon-containing gas added Qxe based on the amount of fluorine-containing gas Qf2 supplied
The case where the amount of xenon-containing gas added Qxe is determined in accordance with the amount of fluorine-containing gas Qf2 in the same manner as in embodiment 1 and embodiment 2 will be described.
In
Rf2=Cxemt/(Cxeb-Cxemt)
Here, Cxeb is the xenon concentration of the xenon-containing gas.
The amount of added xenon-containing gas Qxe is given by the following equation, as in the above (equation 1).
Qxe Rf 2. Qf2 (formula 3)
13.3 determination of the amount of xenon-containing gas Qxe based on the amount of emitted laser gas Qex
A case where the amount of xenon-containing gas added Qxe is determined in accordance with the amount of laser gas discharged Qex to the outside of the apparatus will be described in the same manner as in embodiment 3.
In
Qxe Rex Qex (formula 4)
On the other hand, the supply amount Qf2 of the fluorine-containing gas can be expressed by the following equation using the exhaust amount Qex of the laser gas and the fluorine gas concentration Cf2 of the fluorine-containing gas.
Qf2=Qex/(1-1/2·Cf2)
The amount of added xenon-containing gas Qxe is given by the following equation based on this equation and equation 3 above.
Qxe={Rf2/(1-1/2·Cf2)}Qex
From this equation and equation 4 above, the ratio Rex of the amount of xenon-containing gas added Qxe to the amount of laser gas exhausted Qex is as follows.
Rex=Rf2/(1-1/2·Cf2)
Similarly to embodiment 4, the xenon-containing gas addition amount Qxe may be determined based on data of the exhaust amount Qex used by the
Qxe=Rf2·Qex
In the laser gas regeneration device according to
The excimer laser apparatus according to
The above description is not limiting, but is simply illustrative. Accordingly, it will be apparent to those skilled in the art that modifications can be made to the embodiments of the disclosure without departing from the scope of the appended claims.
The terms used in the present specification and the appended claims should be construed as "non-limiting". For example, a term "comprising" or "includes" should be interpreted as "not being limited to the portion described as being included". The term "having" should be interpreted as "not limited to the portion described as having". Furthermore, the modifiers "a" or "an" as used in this specification and the appended claims should be construed to mean "at least one" or "one or more".
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