本公开涉及制造高纯度Al-xGa-(1-x)N(0.5≤x≤1)压电薄膜的方法以及利用该方法的高纯度Al-xGa-(1-x)N(0.5≤x≤1)压电薄膜及利用该薄膜的装置(Method of manufacturing Al-xGa-(1-x)N(0.5≤x≤1)piezoelectric thin films with high purity and their apparatus using the thin film),其中,制造高纯度Al-xGa-(1-x)N(0.5≤x≤1)压电薄膜的方法包括：在蓝宝石成膜基板形成牺牲层的步骤；以及在牺牲层上生长Al-xGa-(1-x)N(0.5≤x≤1)压电薄膜的步骤,其中,在生长Al-xGa-(1-x)N(0.5≤x≤1)压电薄膜的步骤之前,还包括：形成由Al-yGa-(1-y)N(0.5≤y≤1)构成的第一半导体层的步骤。