阅读说明：本技术 用于动态色彩调控的法布里-珀罗腔滤波器及方法 (Fabry-Perot cavity filter and method for dynamic color regulation ) 是由 蒋向东 李明成 许文瑞 王继岷 李伟 于 2020-07-23 设计创作，主要内容包括：本发明提供一种用于动态色彩调控的法布里-珀罗腔滤波器及制备方法和调谐方法,从上至下依次包括第一层金属薄膜层、第二层非导电电介质层、第三层透明导电氧化物层、第四层金属层、第五层衬底层；所述第二层非导电电介质层作为阻挡层阻挡介电常数趋于0的材料发生电化学金属化后的金属离子迁移；所述第三层透明导电氧化物层为介电常数趋于0的材料,在电场作用下能实现折射率的改变,从而调节法布里-珀罗腔腔体的折射率；本发明基于ECM效应实现ENZ材料的有效折射率的改变,从而改变FP腔的共振波长,能有效解决上述问题,并且能够在撤去电压的同时,完成对共振条件的记忆。(The invention provides a Fabry-Perot cavity filter for dynamic color regulation and control, a preparation method and a tuning method, which sequentially comprise a first metal film layer, a second non-conductive dielectric layer, a third transparent conductive oxide layer, a fourth metal layer and a fifth substrate layer from top to bottom; the second non-conductive dielectric layer is used as a barrier layer to block metal ion migration of a material with a dielectric constant of being close to 0 after electrochemical metallization; the third transparent conductive oxide layer is made of a material with a dielectric constant of 0, and the refractive index can be changed under the action of an electric field, so that the refractive index of the Fabry-Perot cavity body is adjusted; the invention realizes the change of the effective refractive index of the ENZ material based on the ECM effect, thereby changing the resonance wavelength of the FP cavity, effectively solving the problems and completing the memory of the resonance condition while removing the voltage.)

1. A Fabry-Perot cavity filter for dynamic color tuning, comprising: the multilayer composite film sequentially comprises a first metal film layer (11), a second non-conductive dielectric layer (12), a third transparent conductive oxide layer (13), a fourth metal layer (14) and a fifth substrate layer (15) from top to bottom;

the first metal film layer (11) is used for introducing incident light into the Fabry-Perot cavity and is used as an upper metal layer in a metal-insulator-metal structure of the Fabry-Perot cavity;

the second non-conductive dielectric layer (12) is an intermediate dielectric layer in a metal-insulator-metal structure of a Fabry-Perot cavity and is used as a barrier layer for blocking metal ion migration after electrochemical metallization of a material with a dielectric constant of about 0;

the third transparent conductive oxide layer (13) is made of a material with a dielectric constant of 0, and the refractive index can be changed under the action of an electric field, so that the refractive index of the Fabry-Perot cavity is adjusted;

the fourth metal layer (14) is used as a lower metal layer in a Fabry-Perot cavity metal-insulator-metal structure;

the bottom is a fifth layer substrate layer (15), on which the structure is prepared;

meanwhile, a memristor unit is formed by a first metal thin film layer (11), a second non-conductive dielectric layer (12), a third transparent conductive oxide layer (13) and a fourth metal layer (14), wherein the first metal thin film layer (11) is used as a first electrode, the fourth metal layer is used as a second electrode (14), the first metal thin film layer (11) and the second non-conductive dielectric layer (12) form a mutually-perpendicular crossed array structure, the second non-conductive dielectric layer (12) and the third transparent conductive oxide layer (13) form a mutually-perpendicular crossed array structure, the first electrode is electrically connected with the second electrode, voltage is applied to the memristor unit to complete regulation and control of the refractive index, the voltage is removed, and the refractive index completes memory.

2. The fabry-perot cavity filter for dynamic color manipulation of claim 1, wherein: the first metal film layer (11) is made of Au, the thickness of the Au film ensures that incident light can penetrate through the Au film to enter the FP cavity, and the thickness of the Au film is 15-30 nm.

3. The fabry-perot cavity filter for dynamic color manipulation of claim 1, wherein: the second non-conductive dielectric layer (12) is a titanium dioxide layer, TiO₂TiO as non-conductive dielectric to form an electric field in the memristive cell₂The layer thickness is 50-100 nm.

4. The fabry-perot cavity filter for dynamic color manipulation of claim 1, wherein: the third transparent conductive oxide layer (13) is a silicon dioxide silver-doped film layer, SiO₂The preset volume fraction of Ag is 90%, the silicon dioxide silver-doped thin film layer exists in the area of the real part of dielectric constant area 0, and the thickness of the silicon dioxide silver-doped thin film layer is 75-150 nm.

5. The fabry-perot cavity filter for dynamic color manipulation of claim 1, wherein: the fourth metal layer (14) is an Au layer, and the thickness of the Au layer is 200-300 nm.

6. The fabry-perot cavity filter for dynamic color manipulation of claim 1, wherein: the fifth layer substrate layer (15) is a Si substrate layer, and the thickness of the fifth layer substrate layer is 15 mm.

7. The method of any of claims 1 to 6 for preparing a Fabry-Perot cavity filter for dynamic color tuning, comprising the steps of:

(1) depositing an Au film on the fifth substrate layer (15) by using a direct-current magnetron sputtering mode;

(2) depositing a silicon dioxide silver-doped transparent conductive film on the fourth metal layer (14) by using a radio frequency magnetron co-sputtering mode, and patterning the layer of material by using a mask;

(3) depositing TiO on the third transparent conductive oxide layer (13) by using a direct current magnetron sputtering mode₂Patterning the layer of material by using a mask;

(4) and depositing an Ag film on the second non-conductive dielectric layer (12) by using a direct current magnetron sputtering method, and patterning the material of the layer by using a mask to form an electrode.

8. The method of tuning the resonance wavelength and the resonance intensity of a fabry-perot cavity filter for dynamic color tuning of any of claims 1 to 6, characterized by the steps of:

filter pair x when no voltage is applied₁The wavelength has strong absorption and presents a color, a positive voltage is applied to a fourth metal layer (14) through a voltage device, Ag atoms in a third transparent conductive oxide layer (13) can be electrochemically metalized, Ag is pre-embedded in the third transparent conductive oxide layer, adjacent Ag clusters are equivalent to two electrodes, the Ag atoms can form Ag nanowires between the Ag clusters through oxidation-reduction reaction, the effective refractive index of the third transparent conductive oxide layer is changed, the Ag nanowires near the interface of a second non-conductive dielectric layer and the third transparent conductive oxide layer can be blocked at the interface to form an Ag layer, and the refractive index of the third transparent conductive oxide layer is changed along with the formation of the Ag nanowires at the moment, so that the Ag nanowire layer can be used for x₂The wavelength has strong absorption and shows b color; as the positive voltage is further applied to the fourth metal layer, Ag nano-wires in the third transparent conductive oxide layer are further formed, the refractive index is continuously changed, and the x is subjected to the positive voltage₃The wavelength has strong absorption and shows c color;

the first metal film layer (11) is applied with positive voltage through a voltage device, Ag atoms continue to generate electrochemical metallization effect, Ag nano wires of the third transparent conductive oxide layer start to be gradually broken, the refractive index changes, and x is subjected to₂The wavelength has strong absorption and shows b color, as a positive voltage is further applied to the first metal film layer (11), Ag wires formed in the third transparent conductive oxide layer are completely broken, the refractive index returns to the initial value, and the color of the third transparent conductive oxide layer is x₁The wavelength has strong absorption and exhibits a color.

Technical Field

The invention belongs to the technical field of display, and particularly relates to a Fabry-Perot cavity filter for dynamic color regulation and control, and a preparation method and a tuning method thereof.

Background

In the field of display technology, plasma structures can be used to generate different colors, but once the structures are determined, the generated colors are fixed. The plasma structure has the characteristics of thin structure, stability, high resolution and the like in the display technology. How to dynamically adjust the color of the plasma is a hotspot of current research, most of the ideas of dynamic adjustment are to change the structure of the plasma so as to adjust the intensity or wavelength of the plasma, and the current main regulation and control mode is mainly based on: direct electrochemical control, reversible electrochemical deposition, polarization control, a pullable embedded structure, a phase change material, and electromechanical control of the distance between two metals of a fabry-perot (FP) cavity. The invention mainly realizes the dynamic adjustment of colors based on the FP cavity.

FP cavities are typically a special optical structure formed by two high reflectivity metal layers and an intermediate layer cavity. Incident light beams can generate a multi-beam interference effect in the cavity, light waves meeting the phase matching condition can generate resonance, and the resonance wavelength is related to the cavity length and the cavity refractive index.

However, most FP cavities choose to adjust the resonant wavelength by adjusting the cavity length in two main ways: the first is to prepare FP cavities of different cavity lengths, but this does not allow for a truly dynamic adjustment, and the second is to electrostatically adjust the distance between the two metal plates, but such devices are expensive to manufacture and complex to manufacture, and the mechanical device lifetime decreases with time.

The FP cavity that changes the resonance wavelength by changing the cavity refractive index is reported, and the reason for this is because the refractive index of the material that can be used as the FP cavity is not easily changed. The material with the dielectric constant tending to 0 (Epsilon-near-zero) ENZ material refers to the material with the real part of the dielectric constant tending to 0 in a specific wavelength interval. Based on the change Δ n of the refractive index of the material being Δ/2(2 √), a large change in the refractive index can be obtained with a theoretically limited change in the dielectric constant when the value approaches 0. The metal ions in the ENZ material under bias, due to the electrochemical metallization (ECM) occurring, also enable dynamic adjustment and memory of the refractive index. Therefore, based on the technology, the FP cavity based on the ENZ material is designed, and the function of dynamically regulating and controlling the color can be realized by changing the resonance wavelength.

Disclosure of Invention

Aiming at the problem that the length of the Fabry-Perot (FP) cavity is adjusted to adjust the resonance wavelength and the resonance intensity, the invention provides the FP cavity which uses a material (ENZ material) with a dielectric constant of being close to 0 as a cavity material, the resonance wavelength and the resonance intensity are adjusted by dynamically adjusting the refractive index of the ENZ material by applying voltage so as to achieve the purpose of adjusting color, and the memory of the color is completed after the voltage is removed.

In order to achieve the purpose, the technical scheme of the invention is as follows:

a Fabry-Perot cavity filter for dynamic color regulation comprises a first metal film layer 11, a second non-conductive dielectric layer 12, a third transparent conductive oxide layer 13, a fourth metal layer 14 and a fifth substrate layer 15 from top to bottom in sequence;

the first metal thin film layer 11 is used for introducing incident light into the fabry-perot cavity and is used as an upper metal layer in a metal-insulator-metal structure of the fabry-perot cavity;

the second non-conductive dielectric layer is used as an intermediate dielectric layer 12 in a metal-insulator-metal structure of a Fabry-Perot cavity and is used as a barrier layer for blocking metal ion migration after electrochemical metallization of a material (ENZ material) with a dielectric constant of being close to 0;

the third transparent conductive oxide layer 13 is made of a material with a dielectric constant of about 0, and can change the refractive index under the action of an electric field, so that the refractive index of the Fabry-Perot cavity is adjusted;

the fourth metal layer 14 is used as a lower metal layer in a fabry-perot cavity metal-insulator-metal structure;

the bottom is a fifth layer substrate layer 15 on which the above structure is prepared;

meanwhile, a first metal thin film layer 11, a second non-conductive dielectric layer 12, a third transparent conductive oxide layer 13 and a fourth metal layer 14 form a memristive unit, wherein the first metal thin film layer 11 serves as a first electrode, the fourth metal layer serves as a second electrode 14, the first metal thin film layer 11 and the second non-conductive dielectric layer 12 form a mutually perpendicular crossed array (CROSSBAR) structure, the second non-conductive dielectric layer 12 and the third transparent conductive oxide layer 13 form a mutually perpendicular crossed array structure, the first electrode is electrically connected with the second electrode, voltage is applied to the memristive unit to complete the regulation and control of the refractive index, the voltage is removed, and the refractive index completes the memory.

Preferably, the first metal thin film layer 11 is Au, the thickness of the Au film ensures that incident light can penetrate through the Au film and enter the FP cavity, and the thickness of the Au film is 15-30 nm.

Preferably, the second non-conductive dielectric layer 12 is a titanium dioxide layer, TiO₂TiO as non-conductive dielectric to form an electric field in the memristive cell₂The layer thickness is 50-100 nm.

Preferably, the third transparent conductive oxide layer 13 is a silica-doped silver thin film layer, SiO₂The preset volume fraction of Ag is 90%: the silicon dioxide silver-doped thin film layer exists in the area of the real part of the dielectric constant area 0, and the thickness of the silicon dioxide silver-doped thin film layer is 75-150 nm.

Preferably, the fourth metal layer 14 is an Au layer, and the thickness of the Au layer is 200-300 nm.

Preferably, the fifth layer substrate layer 15 is a Si substrate layer, and the thickness thereof is 15 mm.

In order to achieve the above object, the present invention further provides a method for preparing a fabry-perot cavity filter for dynamic color control, comprising the following steps:

(1) depositing an Au film on the fifth substrate layer 15 by using a direct-current magnetron sputtering mode;

(2) depositing a silicon dioxide silver-doped transparent conductive film on the fourth metal layer 14 in a radio frequency magnetron co-sputtering mode, and patterning the layer of material by using a mask;

(3) depositing TiO2 on the third transparent conductive oxide layer 13 by using a direct-current magnetron sputtering mode, and patterning the layer of material by using a mask;

(4) depositing an Ag film on the second non-conductive dielectric layer 12 by using a direct current magnetron sputtering method, and patterning the layer of material by using a mask to form an electrode.

In order to achieve the above object, the present invention further provides a method for tuning the resonance wavelength and the resonance intensity of the fabry-perot cavity filter for dynamic color control, comprising the following steps:

filter pair x when no voltage is applied₁The wavelength has strong absorption and presents a color, a positive voltage is applied to the fourth metal layer 14 through a voltage device, Ag atoms in the third transparent conductive oxide layer 13 can be subjected to electrochemical metallization, Ag is pre-embedded in the third transparent conductive oxide layer, adjacent Ag clusters are equivalent to two electrodes, Ag atoms can form Ag nanowires between the Ag clusters through oxidation-reduction reaction, the effective refractive index of the third transparent conductive oxide layer is changed, the Ag nanowires close to the interface of the second non-conductive dielectric layer and the third transparent conductive oxide layer can be blocked at the interface to form an Ag layer, and the refractive index of the third transparent conductive oxide layer is changed along with the formation of the Ag nanowires at the moment, so that the Ag layer can be subjected to x-ray color correction₂The wavelength has strong absorption and shows b color; as the positive voltage is further applied to the fourth metal layer, Ag nano-wires in the third transparent conductive oxide layer are further formed, the refractive index is continuously changed, and the x is subjected to the positive voltage₃The wavelength has strong absorption and shows c color;

applying positive voltage to the first metal film layer 11 by a voltage device, the Ag atoms continue to generate electrochemical metallization effect, the Ag nanowires of the third transparent conductive oxide layer start to break gradually, the refractive index changes, and the X pairs₂The wavelength has strong absorption and showsb, when a positive voltage is further applied to the first metal thin film layer 11, the Ag nanowires formed in the third transparent conductive oxide layer are completely broken, the refractive index returns to the initial value, and the refractive index is adjusted to x₁The wavelength has strong absorption and exhibits a color.

The invention has the beneficial effects that: most reports about the dynamic adjustment of the FP cavity currently adjust the resonance mode of the FP cavity by electromechanically controlling the thickness of the cavity between two metal plates, but this kind of FP cavity has mechanical loss, and the change of the cavity length inevitably causes the design problem of the device structure. The invention realizes the change of the effective refractive index of the ENZ material based on the ECM effect, thereby changing the resonance wavelength of the FP cavity, effectively solving the problems and completing the memory of the resonance condition while removing the voltage.

Drawings

FIG. 1 is a schematic perspective view of the present invention;

FIG. 2 is a top view of the structure provided by the present invention;

FIG. 3 is a schematic structural diagram of a voltage modulation unit according to the present invention;

FIG. 4 is a schematic diagram of a voltage modulation process according to the present invention;

FIG. 5 is a diagram of simulation results of the present invention.

1 is a Fabry-Perot cavity; 2 is an Ag accumulation layer, and 11 is a first metal film layer; 12 is a second non-conductive dielectric layer; 13 is a third transparent conductive oxide layer; 14 is a fourth metal layer; 15 is a fifth substrate layer;

Detailed Description

The embodiments of the present invention are described below with reference to specific embodiments, and other advantages and effects of the present invention will be easily understood by those skilled in the art from the disclosure of the present specification. The invention is capable of other and different embodiments and of being practiced or of being carried out in various ways, and its several details are capable of modification in various respects, all without departing from the spirit and scope of the present invention.

A Fabry-Perot cavity filter for dynamic color regulation comprises a first metal film layer 11, a second non-conductive dielectric layer 12, a third transparent conductive oxide layer 13, a fourth metal layer 14 and a fifth substrate layer 15 from top to bottom in sequence;

the first metal thin film layer 11 is used for introducing incident light into the fabry-perot cavity and is used as an upper metal layer in a metal-insulator-metal structure of the fabry-perot cavity;

the second non-conductive dielectric layer is used as an intermediate dielectric layer 12 in a metal-insulator-metal structure of a Fabry-Perot cavity and is used as a barrier layer for blocking metal ion migration after electrochemical metallization of a material with a dielectric constant of being close to 0;

the third transparent conductive oxide layer 13 is made of a material with a dielectric constant of about 0, and can change the refractive index under the action of an electric field, so that the refractive index of the Fabry-Perot cavity is adjusted;

the fourth metal layer 14 is used as a lower metal layer in a fabry-perot cavity metal-insulator-metal structure;

the bottom is a fifth layer substrate layer 15 on which the above structure is prepared;

meanwhile, a first metal thin film layer 11, a second non-conductive dielectric layer 12, a third transparent conductive oxide layer 13 and a fourth metal layer 14 form a memristive unit, wherein the first metal thin film layer 11 serves as a first electrode, the fourth metal layer serves as a second electrode 14, the first metal thin film layer 11 and the second non-conductive dielectric layer 12 form a mutually perpendicular crossed array (CROSSBAR) structure, the second non-conductive dielectric layer 12 and the third transparent conductive oxide layer 13 form a mutually perpendicular crossed array structure, the first electrode is electrically connected with the second electrode, voltage is applied to the memristive unit to complete the regulation and control of the refractive index, the voltage is removed, and the refractive index completes the memory.

The first metal film layer 11 is made of Au, the thickness of the Au film ensures that incident light can penetrate through the Au film to enter the FP cavity, and the thickness of the Au film is 15-30 nm.

The second non-conductive dielectric layer 12 is a titanium dioxide layer, TiO₂TiO as non-conductive dielectric to form an electric field in the memristive cell₂The layer thickness is 50-100 nm.

The third transparent conductive oxide layer 13 is a silicon dioxide silver-doped thin film layer, SiO₂The preset volume fraction of Ag is 90%: the silicon dioxide silver-doped thin film layer exists in the area of the real part of the dielectric constant area 0, and the thickness of the silicon dioxide silver-doped thin film layer is 75-150 nm.

The fourth metal layer 14 is an Au layer with a thickness of 200-300 nm.

The fifth layer substrate layer 15 is a Si substrate layer and has a thickness of 15 mm.

The embodiment also provides a method for preparing the fabry-perot cavity filter for dynamic color control, which comprises the following steps:

(1) depositing an Au film on the fifth substrate layer 15 by using a direct-current magnetron sputtering mode;

(2) depositing a silicon dioxide silver-doped transparent conductive film on the fourth metal layer 14 in a radio frequency magnetron co-sputtering mode, and patterning the layer of material by using a mask;

(3) depositing TiO2 on the third transparent conductive oxide layer 13 by using a direct-current magnetron sputtering mode, and patterning the layer of material by using a mask;

(4) depositing an Ag film on the second non-conductive dielectric layer 12 by using a direct current magnetron sputtering method, and patterning the layer of material by using a mask to form an electrode.

The embodiment further provides a method for tuning the resonance wavelength and the resonance intensity of the fabry-perot cavity filter for dynamic color control, which includes the following steps:

filter pair x when no voltage is applied₁The wavelength has strong absorption and presents a color, a positive voltage is applied to the fourth metal layer 14 through a voltage device, Ag atoms in the third transparent conductive oxide layer 13 can be subjected to electrochemical metallization, Ag is pre-embedded in the third transparent conductive oxide layer, adjacent Ag clusters are equivalent to two electrodes, Ag atoms can form Ag nanowires between the Ag clusters through oxidation-reduction reaction, the effective refractive index of the third transparent conductive oxide layer is changed, and the Ag atoms are close to the second metal layerThe Ag nano-wire at the interface of the non-conductive dielectric layer and the third transparent conductive oxide layer is blocked to form an Ag layer, and the refractive index of the third transparent conductive oxide layer is changed along with the formation of the Ag nano-wire and is opposite to x₂The wavelength has strong absorption and shows b color; as the positive voltage is further applied to the fourth metal layer, Ag nano-wires in the third transparent conductive oxide layer are further formed, the refractive index is continuously changed, and the x is subjected to the positive voltage₃The wavelength has strong absorption and shows c color;

applying positive voltage to the first metal film layer 11 by a voltage device, the Ag atoms continue to generate electrochemical metallization effect, the Ag nanowires of the third transparent conductive oxide layer start to break gradually, the refractive index changes, and the X pairs₂The wavelength has strong absorption and shows b color, and as a positive voltage is further applied to the first metal thin film layer 11, Ag nano-wires formed in the third transparent conductive oxide layer are completely broken, the refractive index returns to the initial value, and the refractive index is adjusted to x₁The wavelength has strong absorption and exhibits a color.

Specifically, in this embodiment, as shown in fig. 1 and fig. 2, each device may be regarded as a plurality of FP cavity control units through the structural design of the cross array (cross array) perpendicular to each other, and different control units can achieve different adjustment effects, so as to achieve control over the entire adjustment effect, and meanwhile, the cross array (cross array) structure can ensure that the ohmic contact is sufficiently small.

As shown in fig. 3, the FP cavity control unit includes a first metal thin film layer 11, a second non-conductive dielectric layer 12, a third transparent conductive oxide layer 13, a fourth metal layer 14 and a fifth substrate layer 15. In the first metal thin film layer 11, the metal material is preferably Au, and in order to enable light to well penetrate through the first metal thin film layer 11, the thickness of Au should not be too thick, in this embodiment, a simulation study is performed by using 30nm Au. Said second non-conductive dielectric layer 13 is preferably TiO₂，TiO₂The titanium dioxide is used as a barrier layer in a memristor, can effectively block the migration of Ag ions, and adopts TiO with the thickness of 50nm₂Film(s)Simulation studies were performed. The third transparent conductive oxide layer 13 is preferably SiO₂The Ag-doped film can realize the migration of Ag atoms in the third transparent conductive oxide layer 13 through the ECM effect under the action of an electric field so as to achieve the purpose of adjusting the effective refractive index of the third transparent conductive oxide layer 12, and the SiO film₂The Ag-doped thin film is also a typical transparent conductive thin film, and the proper doping amount enables the thin film to have an ENZ region in an optical band, so that the change of a dielectric constant is small, a large enough effective refractive index change can be provided, and a modulation effect is enhanced; in order to achieve the effects of transparency and conductivity, the invention adopts SiO with the thickness of 30nm₂The initial doping amount of the Ag-doped film is Si0₂: ag (90%) was subjected to simulation studies. The fourth metal layer 14 is preferably an Au layer, and in order to enable light to be effectively reflected back to the cavity, the simulation research is carried out by using Au with the thickness of 200 nm. The fifth layer substrate layer 15 is preferably a Si substrate with a thickness of 15 mm. The voltage regulating device is arranged on the first metal thin film layer 11 and the fourth metal thin film layer 14, an initial positive voltage is applied to the fourth metal thin film layer 14, and a negative voltage is applied to the first metal thin film layer 11.

As shown in fig. 4, the voltage modulated effective refractive index occurs primarily between the second non-conductive dielectric layer 12 and the third transparent conductive oxide layer 13. Considering that the formation of Ag nanowires is a gradual process, and the second non-conductive dielectric layer 12 can block the migration of Ag atoms, Ag accumulation layers with different thicknesses can be formed between the second non-conductive dielectric layer 12 and the third transparent conductive oxide layer 13 as the voltage application time increases. When no voltage is applied, the overall effective refractive index of the FP cavity is recorded as a. When a positive voltage is applied preliminarily, Ag in the third transparent conductive oxide layer 13 migrates to the second non-conductive dielectric layer 12 and is blocked at the interface of the second non-conductive dielectric layer 12 and the third transparent conductive oxide layer 13 to form an Ag accumulation layer with the thickness of 1nm, Ag nano-wires in the third transparent conductive oxide layer 13 are preliminarily formed at the moment, and under the action of the Ag accumulation layer, the whole effective refractive index of the FP cavity is changed, and the effective refractive index is b at the moment. With further application of positive voltage, the Ag nanowires in the third transparent conductive oxide layer 13 are further formed to form an Ag accumulation layer with a thickness of 2nm, and the overall effective refractive index of the FP cavity continues to change, at which time the effective refractive index is recorded as c. When a positive voltage is further applied, Ag in the third transparent conductive oxide layer 13 is completely formed into an Ag accumulation layer with a thickness of 3nm, and at this time, Ag nanowires in the third transparent conductive oxide layer 13 are completely formed, and the effective refractive index is recorded as d. After the reverse voltage is applied, the Ag nanowires of the third transparent conductive oxide layer 13 are gradually broken, and the effective refractive index is also restored to the initial value.

Fig. 5 shows the simulation result of FDTD (time domain effective difference method) according to the present invention, where the incident light is vertical.

When no positive voltage is applied to the FP cavity control unit, the Ag nanowire is not formed in the third transparent conductive oxide layer 13, and at this time, the effective refractive index corresponds to the curve shown by the effective refractive index a in fig. 5, the resonance peak position is 508.5nm, and the reflectivity is 0.04.

When the FP cavity control unit initially applies a positive voltage, Ag nanowires of the third transparent conductive oxide layer 13 are initially formed, corresponding to a curve shown by the effective refractive index b in fig. 5, whose resonance peak position is 558.7nm and whose reflectance is 0.12.

When the FP cavity control unit further applied a positive voltage, Ag nanowires of the third transparent conductive oxide layer 13 were further formed, corresponding to the curve shown by the effective refractive index c in fig. 5, whose resonance peak position was 633.1nm and whose reflectance was 0.01.

When the FP cavity control unit further applies a positive voltage, the Ag nanowire of the third transparent conductive oxide layer 13 is completely formed, and the resonance peak position is 705.5nm and the reflectance is 0.03 corresponding to the curve shown by the effective refractive index d in fig. 5.

When the FP chamber control unit applies negative voltage, the Ag nano-wires of the third transparent conductive oxide layer 13 are gradually broken, so that the adjustment and the memory of the resonance position and the resonance strength are realized, the adjustment effects of the plurality of FP chamber control units can be mutually superposed, and the adjustment effect of the whole device is more obvious and flexible.

The foregoing embodiments are merely illustrative of the principles and utilities of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or change the above-mentioned embodiments without departing from the spirit and scope of the present invention. Accordingly, it is intended that all equivalent modifications or changes which can be made by those skilled in the art without departing from the spirit and technical spirit of the present invention be covered by the claims of the present invention.