阅读说明：本技术 用于转换光束的光模式的光子器件 (Photonic device for converting optical modes of a light beam ) 是由 小岛启介 滕旻 秋浓俊昭 王炳南 于 2018-10-11 设计创作，主要内容包括：一种用于转换光束的光模式的光子器件包括接收具有第一模式的第一波束的第一端口、模式转换器以及传输第一波束的第二端口。模式转换器被配置为加宽第一波束以将第一模式转换为第二模式,并且在模式转换器的输出侧处对经加宽的第一波束进行缩窄,其中,模式转换器包括具有第一折射率的导引材料和各自具有第二折射率的扰动段,其中,第一折射率大于第二折射率,其中,扰动段被布置在导引材料中以与第一波束交叉。(A photonic device for converting an optical mode of a light beam includes a first port to receive a first beam having a first mode, a mode converter, and a second port to transmit the first beam. The mode converter is configured to widen the first beam to convert the first mode to a second mode, and narrow the widened first beam at an output side of the mode converter, wherein the mode converter comprises a guide material having a first refractive index and perturbation segments each having a second refractive index, wherein the first refractive index is greater than the second refractive index, wherein the perturbation segments are arranged in the guide material to intersect the first beam.)

1. A photonic device for converting an optical mode of an optical beam, the photonic device comprising:

a first port to receive a first beam having a first pattern;

a mode converter configured to widen the first beam to convert the first mode to a second mode and to narrow the widened first beam at an output side of the mode converter, wherein the mode converter comprises a guide material having a first refractive index and perturbation segments each having a second refractive index, wherein the first refractive index is greater than the second refractive index, wherein the perturbation segments are arranged in the guide material to intersect the first beam; and

a second port to transmit the first beam having the second mode, wherein a width of the mode converter is greater than a width of the first port and the second port, wherein the width of the second port is different from the width of the first port, wherein the first port and the second port and the mode converter have the same thickness.

2. The photonic device of claim 1, further comprising a top layer and a bottom layer, wherein the top layer and the bottom layer having a third index of refraction sandwich the first and second ports and the mode converter, wherein the first index of refraction is greater than the third index of refraction.

3. The photonic device of claim 1, wherein each perturbation segment is represented by a hole of the guiding material.

4. The photonic device of claim 1, wherein a minimum pitch d between the perturbation segments is determined to satisfy the condition,

d<λ/(2n_eff)

wherein n is_effIs the highest effective refractive index of the waveguide mode of the guiding material, wherein λ is the wavelength of the first beam.

5. The photonic device of claim 1, wherein a minimum pitch d between the perturbation segments is determined to satisfy the following condition,

d<λ/(2n_eff)

and, the perturbation segments are non-periodically arranged.

6. The photonic device of claim 1, wherein the first refractive index is the same as the refractive index of the first and second ports.

7. The photonic device of claim 1, wherein when the first mode and the second mode are respectively TE_mAnd TE_nRepresenting an m-th mode and an n-th mode, m and n being even numbers, wherein the perturbation segments are arranged approximately symmetrically along a beam direction centerline drawn from the first port to the second port.

8. The photonic device of claim 1, wherein when the first mode and the second mode are respectively TE_mAnd TE_nRepresenting an m-th mode and an n-th mode, at least one of m and n being an odd number, wherein the perturbation segments are arranged alongA beam direction centerline drawn from the first port to the second port is asymmetric.

9. The photonic device of claim 1, wherein the first and second ports and the mode converter are the same material.

10. The photonic device of claim 1, further comprising one or more ports disposed on a side of the first port or the second port, and the one or more ports have a width that is the same as or different from the first port or the second port.

11. The photonic device of claim 9, wherein the same material is silicon.

12. The photonic device of claim 2, wherein the first and second ports and the mode converter are silicon material and the top and bottom layers are silicon dioxide material.

13. The photonic device of claim 1, wherein the same thickness is from about 0.2 μ ι η to about 0.5 μ ι η.

14. The photonic device of claim 9, wherein the same material is silicon nitride.

15. The photonic device of claim 9, wherein the same material is InGaAsP.

16. A photonic device for converting an optical mode of an optical beam, the photonic device comprising:

a first input converter and a first output converter and a second input converter and a second output converter, wherein each of the converters comprises:

a first port to receive a beam having a first pattern;

a mode converter configured to widen the beam to convert the first mode to a second mode and narrow the widened beam at an output side of the mode converter, wherein the mode converter includes a guide material having a first refractive index and perturbation segments each having a second refractive index, wherein the first refractive index is greater than the second refractive index, wherein the perturbation segments are arranged in the guide material to intersect the first beam; and

a second port to transmit the beam having the second mode, wherein a width of the mode converter is greater than a width of the first port and the second port, wherein a width of the second port is greater than a width of the first port, wherein the first port and the second port and the mode converter have the same thickness; and

a crossing guide, the crossing guide comprising:

a first crossover guide having a first crossover input port and a first crossover output port; and

a second cross-guide having a second cross-input port and a second cross-output port, wherein the first cross-guide crosses at right angles to the second cross-guide, wherein each port of the first and second cross-guides has a cross-port width, wherein the first input cross-port is connected to the second port of the first input switch and the first output cross-port is connected to the first port of the first output switch, wherein the second input cross-port is connected to the second port of the second input switch and the second output cross-port is connected to the first port of the second output switch.

Technical Field

The present invention relates generally to compact photonic devices and, more particularly, to broadband mode converters.

Background

Extensive research has been conducted for decades on die division multiplexing (MDM), which transmits multiple channels in a shared multimode bus waveguide to enhance transmission capacity. Many MDM devices have been developed, including multiplexers/demultiplexers (MUX/DEMUX), modular order filters, and modular order converters. The mode-level converter is used to first convert the high-order mode into a transverse electric field fundamental mode (TE) before processing₀) While the high-order mode conversion process is a challenge for MDM on chip. Therefore, it is desirable to realize a high-order mode converter of a compact size.

Disclosure of Invention

Some embodiments of the disclosure are based on the following recognition: by using a machine learning assisted optimization method, compact photonic devices based on the ultra-compact (-4 μm long) SOI analog-to-digital converter family can be obtained from design optimization. TE₀、TE₁And TE₂Mode beams can interconvert at-85% efficiency over a 100nm bandwidth. In principle, the optimization technique can be used to design any analog-to-digital converter. Furthermore, the topologically optimized mode-level converter can help to establish alternative functions (such as crossover and bending) for higher-order modes with compact footprint (footing).

According to some embodiments of the present disclosure, a photonic device for converting an optical mode of an optical beam is provided. The photonic device includes: a first port to receive a first beam having a first pattern; a mode converter configured to widen the first beam to convert the first mode into a second mode at a middle portion of the mode converter, and narrow the widened first beam at an output side of the mode converter, wherein the mode converter includes a guide material having a first refractive index and perturbation segments (perturbation segments) each having a second refractive index, wherein the first refractive index is greater than the second refractive index, wherein the perturbation segments are arranged in the guide material to intersect the first beam; and a second port transmitting a first beam having a second mode, wherein a width of the mode converter is greater than a width of the first port and the second port, wherein a width of the second port is greater than a width of the first port, wherein the first port and the second port and the mode converter have the same thickness.

Furthermore, embodiments of the present disclosure provide a photonic device for converting an optical mode of a light beam, the photonic device comprising a first input converter and a first output converter and a second input converter and a second output converter. Each of the converters includes: a first port to receive a beam having a first pattern; a mode converter configured to widen the beam to convert the first mode into a second mode at a middle portion of the mode converter and narrow the widened beam at an output side of the mode converter, wherein the mode converter includes a guide material having a first refractive index and perturbation sections each having a second refractive index, wherein the first refractive index is greater than the second refractive index, wherein the perturbation sections are arranged in the guide material to intersect the first beam; and a second port transmitting a beam having a second mode, wherein a width of the mode converter is greater than widths of the first port and the second port, wherein a width of the second port is greater than a width of the first port, wherein the first port and the second port and the mode converter have the same thickness. Further, the photonic device includes a crossover guide, the crossover guide including: a first crossover guide having a first crossover input port and a first crossover output port; and a second cross-guide having a second cross-input port and a second cross-output port, wherein the first cross-guide crosses at right angles to the second cross-guide, wherein each port of the first cross-guide and the second cross-guide has a cross-port width, wherein the first input cross-port is connected to the second port of the first input switch and the first output cross-port is connected to the first port of the first output switch, wherein the second input cross-port is connected to the second port of the second input switch and the second output cross-port is connected to the first port of the second output switch.

The presently disclosed embodiments will be further explained with reference to the drawings. The drawings shown are not necessarily to scale, emphasis instead generally being placed upon illustrating the principles of the presently disclosed embodiments.

Drawings

[ FIG. 1A ]

Fig. 1A shows a related art mode step converter.

[ FIG. 1B ]

Fig. 1B shows a main electric field component (Ey) distribution diagram of the mode converter in fig. 1A.

[ FIG. 2A ]

FIG. 2A illustrates a TE according to an embodiment of the present disclosure₀To TE₁A mode step converter.

[ FIG. 2B ]

FIG. 2B shows the TE of FIG. 2A₀To TE₁The main E-field component (E) of a mode-order converter_y) And (5) distribution diagram.

[ FIG. 2C ]

Fig. 2C is an FDTD spectrum showing device efficiency.

[ FIG. 3A ]

FIG. 3A illustrates a TE according to an embodiment of the present disclosure₀To TE₂Examples of converters.

[ FIG. 3B ]

FIG. 3B shows the TE of FIG. 3A₀To TE₂The main E-field component (E) of a mode-order converter_y) And (5) distribution diagram.

[ FIG. 3C ]

Fig. 3C is an FDTD spectrum representing the efficiency of the device of fig. 3A.

[ FIG. 4A ]

FIG. 4A illustrates a TE according to an embodiment of the present disclosure₁To TE₂The geometry of the transducer.

[ FIG. 4B ]

FIG. 4B shows TE₁To TE₂The main E-field component (E) of the converter_y) And (5) distribution diagram.

[ FIG. 4C ]

FIG. 4C shows TE₁To TE₂FDTD spectrum of the converter.

[ FIG. 5A ]

FIG. 5A shows a TE illustrating embodiments according to the present disclosure₁|TE₂To TE₀Schematic diagram of a converter.

[ FIG. 5B ]

FIG. 5B shows a TE illustrating embodiments according to the present disclosure₂|TE₂To TE₀Schematic diagram of a converter.

[ FIG. 6A ]

FIG. 6A illustrates a TE according to an embodiment of the present disclosure₂An example of a 90 degree cross-bar converter.

[ FIG. 6B ]

FIG. 6B shows TE₂The main E-field component (E) of a mode 90-degree cross-over converter_y) And (5) distribution diagram.

[ FIG. 6C ]

FIG. 6C shows TE₂FDTD spectrum of the modal 90-degree cross-converter.

Detailed Description

The following description provides exemplary embodiments only, and is not intended to limit the scope, applicability, or configuration of the disclosure. Rather, the following description of the exemplary embodiments will provide those skilled in the art with a description that enables the implementation of one or more exemplary embodiments. It is contemplated that various changes may be made in the function and arrangement of elements without departing from the spirit and scope of the subject matter as set forth in the appended claims.

In the following description, specific details are given to provide a thorough understanding of the embodiments. However, it will be understood by those of ordinary skill in the art that the embodiments may be practiced without these specific details. For example, systems, processes, and other elements of the disclosed subject matter may be shown in block diagram form as components in order not to obscure the implementations in unnecessary detail. In other instances, well-known processes, structures and techniques may be shown without unnecessary detail in order to avoid obscuring the embodiments. Moreover, like reference numbers and designations in the various drawings indicate like elements.

Furthermore, various embodiments may be described as a process which is depicted as a flowchart, a flow diagram, a data flow diagram, a structure diagram, or a block diagram. Although a flowchart may describe the operations as a sequential process, many of the operations can be performed in parallel or concurrently. In addition, the order of the operations may be rearranged. A process may terminate when its operations are completed, but may have other steps not discussed or included in the figure. Moreover, not all operations in any particular described process may occur in all embodiments. A process may correspond to a method, a function, a procedure, a subroutine, a subprogram, etc. When the procedure corresponds to a function, the termination of the function may correspond to a return of the function to the calling function or the main function.

Moreover, embodiments of the disclosed subject matter can be implemented at least in part manually or automatically. May be implemented using a machine, hardware, software, firmware, middleware, microcode, hardware description languages, or any combination thereof, or at least facilitates a manual implementation or an automatic implementation. When implemented in software, firmware, middleware or microcode, the program code or code segments to perform the necessary tasks may be stored in a machine-readable medium. The processor may perform the necessary tasks.

Summary of embodiments of the disclosure

On-chip time division multiplexing (MDM) enables transmission of multiple optical channels in one shared multimode bus waveguide to enhance transmission capacity. Here, the term mode refers to a light spatial mode.

Many MDM devices have been developed, including multiplexers/demultiplexers (MUX/DEMUX), modular order filters, and modular order converters. One of the major challenges of on-chip MDM is high order mode handling such as bending and crossing. As a result, modular step converters are often developed to precede processingFirst, a high-order mode (TE)₁、TE₂…) to the basic mode (TE)₀)。

Silicon-on-insulator (SOI) mode-step converters have been proposed. The most intuitive converter is to divide the high order modes evenly into multiple TEs₀The slices are then combined in the appropriate phase relationship.

Fig. 1A shows a related art mode step converter 100. Fig. 1B shows a main electric field component (Ey) distribution diagram of the mode converter in fig. 1A. Illustrating that the ultra-low loss mode-step converter based on adiabatic tapers as shown in FIG. 1A can convert TE over a 30 μm long footprint₂Mode conversion to TE₀Modes, as shown in FIG. 1B.

In addition, TE with a more compact footprint (6 μm length) can be achieved using the reverse design₀To TE₁A converter. Such a device can be optimized inside a photonic crystal waveguide such that 70% TE is achieved over a 40nm bandwidth₀To TE₁The conversion efficiency. The size of the analog to digital converter is an important factor in determining how many functions are packaged in a limited size. Although photonic crystals enable compact device sizes, the operating bandwidth becomes relatively narrow because photonic crystals use specific resonance conditions. Further, the mode step converter may be referred to as a mode converter.

FIG. 2A illustrates a TE according to an embodiment of the present disclosure₀To TE₁The mode converter 200. TE₀To TE₁The mode converter 200 includes a first port 210, a mode converter 220, and a second port 230. FIG. 2A is a schematic diagram illustrating TE₀To TE₁Example of optimized geometry of the modal converter.

The first port 210 receives a first beam (input beam, indicated by the arrow in the figure) having a first pattern. The mode converter 220 is configured to widen the first beam and convert the first mode into two at a middle portion of the mode converter 220. In addition, the mode converter 220 delays the phase of one portion with respect to the other and narrows the widened first beam at the output side of the mode converter 200, thereby generating TE₀Mode(s). Up in mode converter 220All the functions described above are performed in a distributed manner. Mode converter 220 includes a guide material 221 having a first index of refraction and a perturbation segment 222. In this case, each perturbation segment 222 has a second refractive index, and the minimum pitch between perturbation segments 222 is represented by pitch d in the figure.

The first refractive index is greater than the second refractive index and the perturbation segments 222 are arranged in the guiding material 221 to intersect the first beam. Further, the second port 230 is configured to transmit the first beam having the second mode. In this case, the width of the mode converter 220 is arranged to be greater than the widths of the first port 210 and the second port 230. The width of the first port 210 is selected to support only TEs₀Mode(s). The width of the second port 230 is arranged to be greater than the width of the first port 210 to support TE₁And the first and second ports 210 and 230 and the modal converter 220 are configured to have the same thickness.

In addition, when the first mode and the second mode are respectively TE_mAnd TE_nThe represented mth mode and nth mode, and when at least one of m and n is an odd number, the perturbation segments 222 are asymmetrically arranged along a beam direction centerline 211 drawn from the first port 210 to the second port 230.

According to some embodiments, TE can be optimized on a 3.85 μm by 2.35 μm silicon region₀To TE₁Converter 200, the silicon region is discretized into a 15 × 25 perturbation segment 222 (rectangular lattice) binary problem. Each perturbation segment 222 represents a fully etched hole with a 50nm radius with a 150nm lattice constant (or pitch) d, where a "1" represents a hole that is etched and a "0" represents no hole. A pitch d of 150nm satisfies the above criterion (<270nm)。TE₀To TE₁The mode converter 200 may be SiO₂And (4) covering by a top coating layer. The cylindrical hole corresponding to the perturbation section 222 is also filled with SiO 2. If the input mode source initiates TE over a bandwidth of 100nm centered at 1.55 μm₀Or TE1 mode, then calculate the transmission and reflection to TE, respectively₀、TE₁Or TE₂Mode(s).

It should be noted that some of the perturbation segments may be arranged spaced apart from a set of perturbation segments 222, which are represented in the figure as segments 222', by more than the pitch d.

The local refractive index profile can be optimized numerically. One approach is to use Direct Binary Search (DBS) and the other approach is to use machine learning. In both approaches, local refractive index variations or fixed size holes are described as binary problems. Alternatively, the variation can be described more in terms of smaller particle sizes (i.e., continuous values of pore size, or continuous variations in shape).

FIG. 2B shows TE₀To TE₁The main E-field (electric field) component (Ey) profile of the modal converter 200. From the field distribution, the input beams are split and then combined at the output port (second port 230) with the top beam delayed by a phase shift of pi relative to the bottom beam. Since the average refractive index of the perturbation segments 222 is less than the average refractive index of the guiding material 221(Si region), the distributed holes (which may be referred to as perturbation segments 222) increase the phase velocity of the beam compared to the Si region (guiding material 221) without holes (perturbation segments 222).

Fig. 2C is the transmission and reflection for each mode of the converter 200 as a function of frequency, showing a transmission efficiency of 85% with 0.5% crosstalk and reflection obtained over a 100nm bandwidth. TE relating to photonic crystal-based related art₀To TE₁In comparison to the converter, fig. 2C shows that the converter 200 operates over a substantially wider bandwidth because the converter 200 avoids Bragg (Bragg) reflection regions. The efficiency of the converter 200 can potentially be improved by using a larger matrix, although a larger footprint and a larger computational effort would be required.

Furthermore, some embodiments of the present disclosure are based on the following recognition: subwavelength devices can provide compact photonic devices without relying on specific resonance conditions. The light field perceives a local average of small structures. The small structures may be referred to as perturbed segments or pixels. The condition of the subwavelength device is expressed as

d<λ/(2n_eff)(1)

Where d is the minimum pitch or distance between perturbing segments, n_effBeing waveguide modes of guided materialThe highest effective index (highest effective index), and λ is the wavelength of the input signal. When a typical SOI (silicon on insulator) structure is used, n is around 1550nm wavelength_effAbout 2.85. Therefore, d should be determined to be less than 270 nm.

Further, the TE can be designed using a similar process as described above₀To TE₂A converter. In this case, TE should be added₂Are equally delayed and merged with the central lobe.

FIG. 3A illustrates a TE according to an embodiment of the present disclosure₀To TE₂An example of the mode converter 300. The TE after optimization is illustrated in the figure₀To TE₂An example of the final geometry of the converter 300.

TE₀To TE₂The mode converter 300 includes a first port 310, a mode converter 320, and a second port 330. TE₀To TE₂The structure of the mode converter 300 is similar to TE₀To TE₁The structure of the mode converter 200.

Mode converter 320 includes a guide material 321 having a first index of refraction and a perturbation segment 322. Each perturbation section 322 has a second refractive index, and the minimum pitch between perturbation sections 222 is arranged to have a pitch d as shown in the figures. It should be noted that some of the perturbation segments may be arranged spaced apart from a set of perturbation segments 322 by more than the pitch d, some of which are denoted as segments 322' in the drawings.

In addition, when the first mode and the second mode are respectively TE_mAnd TE_nThe represented m-th mode and n-th mode, and when m and n are even numbers, the perturbation segments 321 are arranged approximately symmetrically along the beam direction centerline 311 drawn from the first port 310 to the second port 330.

To design TE₀To TE₂The mode converter 300, evaluated a horizontally symmetric structure (20 × 30) on a rectangular silicon area of 4.6 μm × 3.1 μm. During reverse design, due to TE₀Mode and TE₂Both modes are symmetric, so the 10 x 30 matrix (upper half of the geometry) is optimized and mirrored to the lower half of the Si region.

FIG. 3B shows TE₀To TE₂The primary E-field component (Ey) profile of the modal converter 300, illustrating the input TE₀Is equally split into two external paths, and TE₀Is diffracted along the intermediate path and refocused at the output waveguide.

Fig. 3C shows the transmission and reflection of the final device with a transmission efficiency of over 85% indicating less than 1% crosstalk and reflection. Due to TE₀Input cannot excite TE along a horizontally symmetric structure₁Thus TE₁The crosstalk power of (a) is here almost negligible.

FIG. 4A illustrates a TE according to an embodiment of the present disclosure₁To TE₂Mode converter 400. TE₁To TE₂Mode converter 400 may be implemented in a manner similar to that shown in fig. 2A and 3A. As described above, in some cases, depending on the design optimization of the mode converter, some perturbation segments may be arranged spaced apart from a group of perturbation segments by more than the pitch d.

The field diagram of FIG. 4B shows TE₁And TE₂Do not need to go through TE₀As a stepping stone for conversion. FIG. 4C shows that the optimized device can achieve a transfer efficiency of about 87% and to TE₀And TE₁Both crosstalk/reflection of less than 1%. And use of insulating cones [1 ]]60 μm long cascaded TE₀To higher order mode converters, such direct TE₁To TE₂The converter is capable of achieving 87% efficiency and the device length is less than 4 μm.

FIG. 5A shows a TE illustrating embodiments according to the present disclosure₁|TE₂To TE₀Schematic diagram of mixed mode converter-combiner 500. TE₁|TE₂To TE₀The converter-combiner 500 includes a first optical mode input 510, a second optical mode input 520, a mode converter 530, and an output 540. In some cases, output 540 can have another optical mode order, such as TE₁Or TE₂. The optimization algorithm is able to implement these functions. Due to different mode orders of the input signalsSo that the width of inputs 510 and 520 are different.

FIG. 5B shows a TE illustrating embodiments according to the present disclosure₂|TE₂To TE₀Schematic diagram of mixed mode converter-combiner 500. TE₂|TE₂To TE₀The converter 550 includes a first optical mode input 515, a second optical mode input 525, a mode converter 560, and an output 545. Since the mode orders are the same, the widths of inputs 515 and 550 are generally the same. In some cases, output 545 may have another optical mode order, such as TE₁Or TE₂。

In both fig. 5A and 5B, the mixed-mode converter-combiner may first convert the high-order input mode to TE₀Mode, then multiple TEs₀Combining modes into a single TE₀Mode(s). Alternatively, if the order of the higher order modes is the same, they can be combined first and then converted to TE₀Mode(s).

There are two main advantages to combining multiple functions into a single device. By eliminating the waveguide connecting the two separate devices, space will be saved. Furthermore, since the junction between the waveguide and the optical device is a major source of optical loss, optical insertion loss can be reduced.

As described above, the holes corresponding to the perturbation segments 222, 322 and 422 shown in fig. 2A, 3A and 4A are arranged in a periodic (grid) manner, but it is not necessary to arrange in this manner.

In addition, the ultra-compact mode-level converter can also be cascaded with other devices to handle higher order modes. FIG. 6A shows TE₂Example of a mode 90-degree crossbar 600 that connects four TEs at four ports₀To TE₂The converter cascades to a conventional TE₀A 90 degree cross member.

TE₂The modal 90 degree cross-member 600 includes a first input converter 610 and a first output converter 620, and a second input converter 630 and a second output converter 640. Each of the converters 610, 620, 630, and 640 includes a first end-mode converter that receives a beam having a first mode, the mode converter being configured to widen the beam for mode conversionThe first mode is converted into the second mode at the middle portion of the transformer, and the widened beam is narrowed at the output side of the mode transformer.

In addition, the mode converter includes a guide material having a first index of refraction and a perturbation segment. Each perturbation segment has a second refractive index, and the first refractive index is greater than the second refractive index. In this case, the perturbation section is arranged in the guide material to intersect the first beam.

Each of the switches 610, 620, 630, and 640 further includes a second port to transmit a beam having a second mode, wherein a width of each of the mode switches 610, 620, 630, and 640 is greater than a width of the first port and the second port. In this case, the width of the second port is larger than the width of the first port, and the first and second ports and the mode converter also have the same thickness.

TE₂The pattern 90 degree cross member 600 includes a cross guide 650. The cross-over guide 650 includes a first cross-over guide having a first cross-over input port 651 and a first cross-over output port 652, and a second cross-over guide having a second cross-over output port 654 having a second cross-over input port 653. The first output port 652 and the second output port 654 may be referred to as a first pass-through port 652 and a second pass-through port 654.

The first crossing guide crosses the second crossing guide at right angles. The intersection portion where the first intersecting guide intersects with the second intersecting guide includes a rounded corner 655. One of the rounded corners 655 is indicated by an arrow 655 in fig. 6A. Each port of the first and second crossover guides has a crossover port width w. Via the transition slope S of the first and second crossover guides, the first input crossover port 651 is connected to the second port of the first input converter 610 and the first output crossover port 652 is connected to the first port of the first output converter 620. A second input cross-port 653 is connected to a second port of the second input converter 630 and a second output cross-port 654 is connected to a first port of the second output converter 640.

In FIG. 6A, the exemplary diagram shows TE₂The total footprint of the 90 degree cross is 23 μm. FIG. 6B shows TE₂The primary E-field component (E) of the mode 90 degree cross-member 600_y) And (5) distribution diagram. In this case, the first input converter 610 receives the first TE₂The mode optical signal is converted into a first TE₀A mode light signal. First TE₀The mode optical signal propagates through the cross-over guide 650 via a first cross-over input port 651 and a first cross-over output port 652. Further, the first TE₀The mode optical signal is received by the first output converter 620 and converted to a first TE at the output port of the first output converter 620₂A mode light signal. This indicates that TE is properly performed through the input converter 610 and the first output converter 620₂-TE₀-TE₂And (4) mode conversion. First TE₀The mode optical signal is able to propagate the crossover guide 650 with low insertion loss.

Similarly, when a second TE is received by the second input converter 630₂The mode optical signal is converted into a second TE₀In the mode of optical signal, the second TE₀The mode optical signal is received by the second output converter 640 via the second cross input port 653 and the second cross output port 654 of the cross-guide 650. Upon receiving a second TE from the cross guide 650₀In the mode optical signal, the second output converter 640 outputs a second TE signal at the output port of the second output converter 640₀Conversion of a mode optical signal to a second TE₂A mode light signal. In this case, the second TE₀The mode optical signal is able to propagate the crossover guide 650 with low insertion loss. By passing the first TE₂Mode optical signal and second TE₂Conversion of a mode optical signal to a first TE₀Mode optical signal and second TE₀Mode optical signal, converted first TE₀Mode optical signal and second TE₀The mode optical signal can propagate the crossing guide 650 with low loss while crossing at the crossing guide 650. Thus, since the first TE is driven₂Mode optical signal and second TE₂First TE of mode optical signal conversion₀Mode optical signal and second TE₀The mode optical signal can propagate with low loss propagation cross guide 650, TE₂The mode 90 degree cross-piece 600 can be in contact with the TE₂First TE providing low signal loss while crossing 90 degree crossing guides₂Mode optical signal and second TE₂A mode light signal.

Fig. 6C shows simulation results, which indicate that an insertion loss of less than 1.5dB over a 100nm bandwidth is obtained. As shown in the figure, only-30 dB TE is excited at the through port over an 80nm bandwidth₀Cross talk and all modes excited at the cross-port are also below-40 dB.

The above-described embodiments of the present invention can be implemented in any of numerous ways. For example, embodiments may be implemented using hardware, software, or a combination thereof. When implemented in software, the software code can be executed on any suitable processor or collection of processors, whether provided in a single computer or distributed among multiple computers. Such a processor may be implemented as an integrated circuit having one or more processors in an integrated circuit component. However, a processor may be implemented using circuitry in any suitable format.

The input and output ports and the mode converter can be implemented in various material systems. The above example uses SOI. Alternatively, silicon nitride deposited on silicon dioxide may be used. In addition, a layer of indium gallium arsenide phosphide (InGaAsP) material grown on an indium phosphide (InP) substrate may also be used.

The above embodiments of the present invention describe only the TE mode. However, the device can also be designed in Transverse Magnetic (TM) mode.

Furthermore, embodiments of the invention may be embodied as a method, examples of which have been provided. The actions performed as part of the method may be ordered in any suitable way. Accordingly, embodiments may be constructed in which acts are performed in an order different than illustrated, which may include performing some acts concurrently, even though shown as sequential acts in exemplary embodiments.

Use of ordinal terms such as "first," "second," and the like in the claims to modify a claimThe terms do not imply any priority, precedence, or order of one claim element over another or the temporal order in which acts of a method are performed, but are used merely as labels to distinguish one claim element having the same name from another element having the same name (except for the use of ordinals) to distinguish the claim elements. For example, if the first port has a TE₀Mode input and a second port having a TE₂Output, then due to the mutual principle, the device is at TE to be input from the second port₂Conversion to TE output from the first port₀The same goes for excellent results.