阅读说明：本技术 一种低能离子束诱变育种设备和诱变方法 (Low-energy ion beam mutation breeding equipment and mutation method ) 是由 陈恒 李森 李楠 刘少华 邱力军 詹福如 于 2020-08-10 设计创作，主要内容包括：本发明公开了一种低能离子束诱变育种设备和诱变方法,包括电子枪真空室、离子源真空室和育种辐照腔,所述的电子枪真空室内部设置有电子枪,所述的电子枪真空室和离子源真空室通过传输窗连通,所述的电子枪和传输窗同轴设置,所述的电子枪真空室外部连接有第一枪室放气阀,所述的离子源真空室设置有枪室进气阀和第二枪室放气阀,在离子源真空室上与传输窗相对的一侧设置有离子束引入装置,所述的离子束引入装置与育种辐照腔连接。本发明设备具有大功率、能量利用率高、无反射、成本低等优点。(The invention discloses low-energy ion beam mutation breeding equipment and a mutation method, which comprise an electron gun vacuum chamber, an ion source vacuum chamber and a breeding irradiation cavity, wherein an electron gun is arranged in the electron gun vacuum chamber, the electron gun vacuum chamber is communicated with the ion source vacuum chamber through a transmission window, the electron gun and the transmission window are coaxially arranged, the outside of the electron gun vacuum chamber is connected with a first gun chamber air release valve, the ion source vacuum chamber is provided with a gun chamber air inlet valve and a second gun chamber air release valve, one side of the ion source vacuum chamber, which is opposite to the transmission window, is provided with an ion beam introducing device, and the ion beam introducing device is connected with the breeding irradiation cavity. The device has the advantages of high power, high energy utilization rate, no reflection, low cost and the like.)

1. The low-energy ion beam mutation breeding equipment is characterized by comprising an electron gun vacuum chamber (1-2), an ion source vacuum chamber (1-11) and a breeding irradiation chamber (4-1), wherein an electron gun (1-1) is arranged in the electron gun vacuum chamber (1-2), the electron gun vacuum chamber (1-2) is communicated with the ion source vacuum chamber (1-11) through a transmission window (1-8), the electron gun (1-1) and the transmission window (1-8) are coaxially arranged, a first gun chamber air release valve (1-13) is connected to the outside of the electron gun vacuum chamber (1-2), the ion source vacuum chamber (1-11) is provided with a gun chamber air inlet valve (1-12) and a second gun chamber air release valve (1-15), and one side, opposite to the transmission window (1-8), of the ion source vacuum chamber (1-11) is provided with a separation air release valve (1-13) The device comprises a sub-beam introducing device (1-14), and the sub-beam introducing device (1-14) is connected with the breeding irradiation cavity (4-1).

2. The low-energy ion beam mutation breeding device as claimed in claim 1, wherein the electron gun (1-1) is a tripolar electron gun, and is composed of a filament (1-3), a cathode (1-4), a beam focusing electrode (1-5), an anode (1-6) and a focusing coil (1-7), wherein the beam focusing electrode (1-5) is covered on the filament, the cathode (1-4) is connected with the filament (1-3), the anode (1-6) is arranged at the coaxial contraposition of the filament (1-3), the focusing coil (1-7) is respectively arranged on two sides of the outer side of the electron gun (1-1), and the focusing coil (1-7) is connected to two sides of the first metal cylinder electrode (3-4).

3. The low-energy ion beam mutation breeding device according to claim 2, further comprising a vacuum system, wherein the vacuum system comprises an industrial personal computer (2-1), an output end of the industrial personal computer (2-1) is connected with an input end of the PLC device (2-2), an output end of the PLC device (2-2) is connected with input ends of the control device (2-3) and the industrial personal computer (2-1), an input end of the PLC device (2-2) is connected with an output end of the detection device (2-4), and an output end of the control device (2-3) is connected with an input end of the detection device (2-4).

4. The low-energy ion beam mutation breeding device according to claim 3, wherein the control device (2-3) comprises an atmospheric valve (4-3), a gun chamber air inlet valve (1-12), a side pumping valve (4-5), a high valve (4-6), a pre-valve (4-8), a vacuum chamber molecular pump (4-7), a vacuum chamber mechanical pump (4-9) and a cooling water pump (4-10); wherein the atmospheric valve (4-3) is connected to the inner side of a breeding irradiation cavity (4-1) through a pipeline (4-2), the breeding irradiation cavity (4-1) is connected with a gun chamber air inlet valve (1-12) on the outer side of an ion source vacuum chamber (1-11) through a pipeline (4-2), the bottom of the breeding irradiation cavity (4-1) is connected with a cooling water pump (4-10) through a pipeline (4-2), the outside of the breeding irradiation cavity (4-1) is connected with a side pumping valve (4-5) through a pipeline (4-2) and then a high valve (4-6), the high valve (4-6) is connected with a vacuum chamber molecular pump (4-7) through a pipeline (4-2), the vacuum chamber molecular pump (4-7) is connected with a front valve (4-8) through a pipeline (4-2), and the front valve (4-8) is connected with a side pumping valve (4-5) through a pipeline (4- And a vacuum chamber mechanical pump (4-9), the outer side of the breeding irradiation chamber (4-1) is connected with a cabin door (4-12), and the bottom of the inner chamber is provided with a seed turntable (4-11).

5. The low-energy ion beam mutation breeding device of claim 4, wherein the ion beam introducing devices (1-14) adopt a three-electrode extracting system, and the three-electrode extracting system is composed of a metal circular plate electrode (3-6), a second metal cylindrical electrode (3-7) and a metal porous electrode (3-8).

6. The low-energy ion beam mutation breeding device according to claim 5, wherein the low-energy ion beam mutation breeding device further comprises a power supply set system, the power supply set system comprises a filament power supply (3-1), an anode power supply (3-2), a high-voltage acceleration power supply (3-3), a magnetic field power supply (3-5) and a suppression power supply (3-9), the positive terminal of the filament power supply (3-1) is connected with the positive terminal of the filament (1-3) and the negative terminal of the anode power supply (3-2), the negative terminal of the filament power supply (3-1) is connected with the negative terminal of the filament (1-3), the positive terminal of the anode power supply (3-2) is connected with one end of a controllable timing switch S1, and the other end of the controllable timing switch S1 is connected with a resistor R1, One end of a resistor R2, one end of a resistor R3 and one end of a resistor R4, the other end of the resistor R1 is connected with one end of a metal circular plate electrode (3-6), the other end of the resistor R2 is connected with one end of a second metal cylinder electrode (3-7), the other end of the resistor R3 is connected with one end of a first metal cylinder electrode (3-4), the other end of the resistor R4 is connected with the positive end of a high-voltage acceleration power supply (3-3) and one end of a metal porous electrode (3-8), the negative end of the high-voltage accelerating power supply (3-3) is connected with the GND end and one end of the metal porous electrode (3-8), the positive end and the negative end of the magnetic field power supply (3-5) are respectively connected with the two ends of the first metal cylinder electrode (3-4), and the positive end and the negative end of the suppression power supply (3-9) are respectively connected with the GND end and one end of the metal porous electrode (3-8).

7. The method of mutagenizing low energy ion beam mutation breeding equipment of claim 1, comprising the steps of:

(1) preparing before starting up, turning on a cooling water pump (4-10) to turn on cooling water, and switching on an equipment input power supply 220 v;

(2) opening an outer side cabin door (4-12) of a breeding irradiation cavity (4-1), ensuring that a high-voltage power supply (3-3) of a power supply set system is closed and has no beam current in the process of opening the cabin door (4-12), ensuring that a high valve (4-6) and a side pumping valve (4-5) are closed, then opening an atmospheric valve (4-3), and opening the cabin door (4-12) when the internal and external air pressures of the breeding irradiation cavity (4-1) are balanced;

(3) placing samples, sequentially placing the samples on a seed rotating disc (4-11) at the inner side of a breeding irradiation cavity (4-1), placing 6 discs of samples at most at one time, and placing the samples after the placement is finishedClosing the hatch door (4-12), the breeding irradiation cavity (4-1) is in an atmospheric pressure state, and then extracting the internal air pressure of the breeding irradiation cavity (4-1) to ensure that the air pressure of the main cavity reaches 10^-3Pa below;

(4) vacuumizing, starting a vacuum chamber molecular pump (4-7) and a vacuum chamber mechanical pump (4-9), starting a preposed valve (4-8), and then opening a side pumping valve (4-5). When the air pressure in the breeding irradiation cavity (4-1) is 40-60pa, closing the side pumping valve (4-5) and opening the high valve (4-6);

(5) the irradiation parameters of each sample were set up,

(6) opening the ion source, opening the air inlet valve (1-12) of the gun chamber, injecting working gas such as nitrogen, carbon dioxide, etc. into the ion source vacuum chamber (1-11) to maintain the pressure of the ion source vacuum chamber (1-11) at 5 × 10^-3Pa and 5X 10^-2Within the range of Pa;

(7) the upper computer sends an instruction and starts seed irradiation;

(8) and (5) after the irradiation is finished, taking out the sample, and performing shutdown operation.

Technical Field

The invention belongs to the technical field of mutation breeding, and particularly relates to low-energy ion beam mutation breeding equipment and a mutation method.

Background

The breeding mainly comprises modes of crossbreeding, irradiation mutation breeding, genetic engineering breeding and the like. The crossbreeding time is long, and the excellent characters are slow to find. The application of genetic engineering breeding is limited at the present stage, so the technology is difficult to popularize and expand. Radiation mutation breeding is a main breeding means slowly, and ion beam radiation mutation breeding belongs to radiation mutation breeding. The radiation breeding technology comprises natural radioactive source breeding, space radiation breeding and large-scale accelerator radiation breeding, and has the defects of high cost, long period, difficult nuclear raw material management, radiation harm to human bodies and the like. The ion beam irradiation mutation breeding can improve the mutation frequency and rapidly breed seeds with required characters, thereby having good market application prospect.

At present, the existing irradiation breeding equipment has the defects of high cost, large volume, low automation degree, low seed yield of irradiation breeding and the like, so that the design of safe and reliable equipment with short breeding period, low cost, high yield, high added value of finished products is significant for the development of modern agriculture and the national food safety.

Disclosure of Invention

In order to overcome the defects of the prior art, the invention aims to design low-energy ion beam mutation breeding equipment which mainly comprises multiple modules such as an ion source and a vacuum system, and the whole equipment has the advantages of high irradiation seed yield, reliability, safety and the like.

In order to achieve the technical purpose, the invention is realized by the following technical scheme:

the utility model provides a low energy ion beam mutation breeding equipment, includes electron gun vacuum chamber, the real empty room of ion source and breeding irradiation chamber, the inside electron gun that is provided with of the real empty room of electron gun, real empty room of electron gun and ion source pass through the transmission window intercommunication, electron gun and the coaxial setting of transmission window, the real empty room external connection of electron gun have first rifle room bleed valve, the real empty room of ion source be provided with rifle room admission valve and second rifle room bleed valve, be provided with ion beam introducing device with the relative one side of transmission window on the real empty room of ion source, ion beam introducing device be connected with breeding irradiation chamber.

The electron gun is a three-pole electron gun and comprises a filament, a cathode, a beam focusing electrode, an anode and a focusing coil, wherein the beam focusing electrode is covered on the filament, the cathode is connected with the filament, the anode is arranged at the coaxial alignment position of the filament, the focusing coil is respectively arranged on two sides of the outer side of the electron gun, and the focusing coil is connected on two sides of the first metal cylinder electrode.

The low-energy ion beam mutation breeding equipment also comprises a vacuum system, wherein the vacuum system comprises an industrial personal computer, the output end of the industrial personal computer is connected with the input end of the PLC equipment, the output end of the PLC equipment is connected with the input ends of the control device and the industrial personal computer, the input end of the PLC equipment is connected with the output end of the detection device, and the output end of the control device is connected with the input end of the detection device.

The control device comprises an atmospheric valve, a gun chamber air inlet valve, a side pumping valve, a high valve, a preposed valve, a vacuum chamber molecular pump, a vacuum chamber mechanical pump and a cooling water pump. Wherein the atmosphere valve is connected to the breeding irradiation cavity through a pipeline, the breeding irradiation cavity is connected with a gun chamber air inlet valve outside the ion source vacuum chamber through a pipeline, the bottom of the breeding irradiation cavity is connected with a cooling water pump through a pipeline, the outside of the breeding irradiation cavity is connected with a side pumping valve and then a high valve through a pipeline, the high valve is connected with a vacuum chamber molecular pump through a pipeline, the vacuum chamber molecular pump is connected with a front valve through a pipeline, the front valve is connected with a side pumping valve and a vacuum chamber mechanical pump through a pipeline, the outside of the breeding irradiation cavity is connected with a cabin door, and a seed turntable is.

The detection device comprises detection modules such as a low vacuum gauge, a high vacuum gauge and the like.

The ion beam leading-in device adopts a three-electrode leading-out system, and the three-electrode leading-out system respectively consists of a metal circular plate electrode, a second metal cylindrical electrode and a metal porous electrode.

The low-energy ion beam mutation breeding equipment further comprises a power supply set system, the power supply set system comprises a filament power supply, an anode power supply, a high-voltage accelerating power supply, a magnetic field power supply and a restraining power supply, the positive end of the filament power supply is connected with the positive end of a filament and the negative end of the anode power supply, the negative end of the filament power supply is connected with the negative end of the filament, the positive end of the anode power supply is connected with one end of a controllable timing switch S1, the other end of the controllable timing switch S1 is connected with one ends of a resistor R1, a resistor R2, a resistor R3 and a resistor R4, the other end of the resistor R1 is connected with one end of a metal circular plate electrode, the other end of the resistor R2 is connected with one end of a second metal cylindrical electrode, the other end of the resistor R3 is connected with one end of a first metal cylindrical electrode, the other end of the resistor R4 is connected with the positive end of the high-voltage accelerating power supply, the positive end and the negative end of the magnetic field power supply are respectively connected with two ends of the first metal cylindrical electrode, and the positive end and the negative end of the suppression power supply are respectively connected with the GND end and one end of the metal porous electrode.

The filament power supply, the anode power supply, the high-voltage accelerating power supply, the magnetic field power supply and the suppressing power supply respectively have output rated voltages of 30V, 250V, 50KV, 20V and-2 KV, and output rated currents of 30A, 1A, 20mA, 15A and 20 mA.

The filament power supply, the anode power supply, the high-voltage accelerating power supply, the magnetic field power supply and the inhibiting power supply are sequentially started, and the starting sequence is filament power supply-magnetic field power supply-anode power supply-high-voltage accelerating power supply-inhibiting power supply respectively.

The values of the parameters of the resistor R1, the resistor R2, the resistor R3 and the resistor R4 are respectively 200 omega, 1K omega and 10M omega.

The low-energy ion beam mutation breeding equipment comprises the following steps:

(1) and (5) preparing before starting up. And (4) turning on a cooling water pump to switch on cooling water, and switching on an equipment input power supply 220 v.

(2) And opening a hatch door on the outer side of the breeding irradiation cavity. In the process of opening the cabin door, the high-voltage power supply of the power supply set system needs to be ensured to be closed and have no beam current, the high valve and the side pumping valve are ensured to be closed, then the atmospheric valve is opened, and when the air pressure inside and outside the breeding irradiation cavity is balanced, the cabin door is opened.

(3) And placing a sample. The samples are sequentially placed on a seed rotating disc on the inner side of a breeding irradiation cavity, 6 samples are placed at most once, a cabin door is closed after the placement is finished, the breeding irradiation cavity is in an atmospheric pressure state, then the air pressure inside the breeding irradiation cavity is extracted, and the air pressure of a main cavity reaches 10^-3Pa is atThe following steps.

(4) And (6) vacuumizing. The molecular pump and the mechanical pump in the vacuum chamber are started first, then the preposed valve is started, and then the side pumping valve is opened. When the air pressure in the breeding irradiation cavity is 40-60pa, the side pumping valve is closed, and the high valve is opened.

(5) And the upper computer inputs the irradiation parameters of the samples.

(6) The ion source is turned on. Opening the air inlet valve of the gun chamber, injecting working gas such as nitrogen and carbon dioxide into the vacuum chamber of the ion source to maintain the pressure of the vacuum chamber of the ion source at 5 × 10^-3Pa and 5X 10^-2Within the Pa range.

(7) And the upper computer sends an instruction and starts seed irradiation.

(8) And (5) after the irradiation is finished, taking out the sample, and performing shutdown operation.

The invention has the beneficial effects that:

1. the method carries out breeding in an ion beam mode and has the advantages of high power, high energy utilization rate, no reflection, low cost and the like.

2. And an integrated control technology is adopted, so that the intelligent control system has the advantages of high intelligent degree, convenience in control and the like.

3. Low manufacturing cost, high yield, safety and reliability.

Drawings

FIG. 1 is a schematic view of device module connections for an ion source and gas system;

FIG. 2 is a schematic diagram of the device connections and component modules of the vacuum system;

FIG. 3 is a schematic view of the connection between an ion beam breeding irradiation cavity and a control device;

FIG. 4 is a schematic diagram of the device connections and component modules of the power pack system;

FIG. 5 is a flow chart illustrating the overall system operation steps;

in the figure:

1-1 parts of electron gun, 1-11 parts of ion source vacuum chamber, 1-12 parts of gun chamber air inlet valve, 1-13 parts of first gun chamber air release valve, 1-14 parts of ion beam introducing device, 1-15 parts of second gun chamber air release valve, 1-2 parts of electron gun vacuum chamber, 1-3 parts of filament, 1-4 parts of cathode, 1-5 parts of beam focusing electrode, 1-6 parts of anode, 1-7 parts of focusing coil, 1-8 parts of transmission window;

2-1 parts of an industrial personal computer, 2-2 parts of a PLC device, 2-3 parts of a control device, 2-4 parts of a detection device;

3-1 parts of power supply, 3-2 parts of anode power supply, 3-3 parts of high-voltage acceleration power supply, 3-4 parts of first metal cylindrical electrode, 3-5 parts of magnetic field power supply, 3-6 parts of metal circular plate electrode, 3-7 parts of second metal cylindrical electrode, 3-8 parts of metal porous electrode, 3-9 parts of suppression power supply;

4-1 parts of breeding irradiation cavity, 4-2 parts of pipeline, 4-3 parts of atmospheric valve, 4-5 parts of side pumping valve, 4-6 parts of high valve, 4-7 parts of vacuum chamber molecular pump, 4-8 parts of pre-valve, 4-9 parts of vacuum chamber mechanical pump, 4-10 parts of cooling water pump, 4-11 parts of seed turntable, 4-12 parts of cabin door.

Detailed Description

The technical solutions of the present invention will be described clearly and completely with reference to specific embodiments of the present invention, and it should be understood that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.

Referring to fig. 1, the low-energy ion beam mutation breeding device comprises an electron gun vacuum chamber 1-2, an ion source vacuum chamber 1-11 and a breeding irradiation chamber 4-1, wherein an electron gun 1-1 is arranged in the ion source vacuum chamber 1-11, the electron gun 1-1 is a tripolar electron gun and consists of a filament 1-3, a cathode 1-4, a beam focusing electrode 1-5, an anode 1-6 and a focusing coil 1-7, wherein, the beam-focusing electrode 1-5 is covered on the filament, the cathode 1-4 is connected with the filament 1-3, the anode 1-6 is arranged at the coaxial contraposition of the filament 1-3, the focusing coils 1-7 are respectively arranged at the two sides of the outer side of the electron gun 1-1, and the focusing coils 1-7 are connected with the two sides of the first metal cylinder electrode 3-4.

An electron gun vacuum chamber 1-2 is communicated with an ion source vacuum chamber 1-11 through a transmission window 1-8, the electron gun 1-1 and the transmission window 1-8 are coaxially arranged, a first gun chamber air release valve 1-13 is connected to the outside of the electron gun vacuum chamber 1-2, the ion source vacuum chamber 1-11 is provided with a gun chamber air inlet valve 1-12 and a second gun chamber air release valve 1-15, the first gun chamber air release valve 1-13, the gun chamber air inlet valve 1-12 and the second gun chamber air release valve 1-15 are respectively connected with a vacuum system, an ion beam introducing device 1-14 is arranged on one side of the ion source vacuum chamber 1-11 opposite to the transmission window 1-8, and the ion beam introducing device 1-14 is connected with a breeding irradiation cavity 4-1.

Referring to fig. 2, the vacuum system comprises an industrial personal computer 2-1, wherein the output end of the industrial personal computer 2-1 is connected with the input end of a PLC device 2-2, the output end of the PLC device 2-2 is connected with a control device 2-3 and the input end of the industrial personal computer 2-1, the input end of the PLC device 2-2 is connected with the output end of a detection device 2-4, and the output end of the control device 2-3 is connected with the input end of the detection device 2-4.

Referring to fig. 3, the control device 2-3 comprises an atmospheric valve 4-3, a gun chamber air inlet valve 1-12, a side pumping valve 4-5, a high valve 4-6, a front valve 4-8, a vacuum chamber molecular pump 4-7, a vacuum chamber mechanical pump 4-9 and a cooling water pump 4-10. The air valve 4-3 is connected to the inner side of a breeding irradiation cavity 4-1 through a pipeline 4-2, the breeding irradiation cavity 4-1 is connected with a gun chamber air inlet valve 1-12 on the outer side of an ion source vacuum chamber 1-11 through a pipeline, the bottom of the breeding irradiation cavity 4-1 is connected with a cooling water pump 4-10 through a pipeline, the outer part of the breeding irradiation cavity 4-1 is connected with a side pumping valve 4-5 and a high valve 4-6 through a pipeline, the high valve 4-6 is connected with a vacuum chamber molecular pump 4-7 through a pipeline, the vacuum chamber molecular pump 4-7 is connected with a front valve 4-8 through a pipeline, the front valve 4-8 is connected with a side pumping valve 4-5 and a vacuum chamber mechanical pump 4-9 through a pipeline, the outer side of the breeding irradiation cavity 4-1 is connected with a cabin door 4-12.

The detection device 2-4 comprises a low vacuum gauge, a high vacuum gauge and other detection modules.

Referring to FIG. 4, the low-energy ion beam mutation breeding device further comprises a power supply set system, the power supply set system comprises a filament power supply 3-1, an anode power supply 3-2, a high-voltage accelerating power supply 3-3, a magnetic field power supply 3-5 and a suppressing power supply 3-9, the positive end of the filament power supply 3-1 is connected with the positive end of the filament 1-3 and the negative end of the anode power supply 3-2, the negative end of the filament power supply 3-1 is connected with the negative end of the filament 1-3, the positive end of the anode power supply 3-2 is connected with one end of a controllable timing switch S1, the other end of the controllable timing switch S1 is connected with one end of a resistor R1, a resistor R2, a resistor R3 and a resistor R4, the other end of the resistor R1 is connected with one end of a metal circular plate electrode 3-6 of the ion beam introducing device 1-14, the other end of the resistor R2 is, the other end of the resistor R3 is connected with one end of a first metal cylindrical electrode 3-4 in the electron gun 1-1, the other end of the resistor R4 is connected with the positive end of a high-voltage accelerating power supply 3-3 and one end of a metal porous electrode 3-8 of an ion beam introducing device 1-14, the negative end of the high-voltage accelerating power supply 3-3 is connected with the GND end and one end of the metal porous electrode 3-8, the positive end and the negative end of a magnetic field power supply 3-5 are respectively connected with the two ends of the first metal cylindrical electrode 3-4 in the electron gun 1-1, and the positive end and the negative end of a suppression power supply 3-9 are respectively connected with the GND end and one end of the metal porous electrode 3-8. The values of the parameters of the resistor R1, the resistor R2, the resistor R3 and the resistor R4 are respectively 200 omega, 1K omega and 10M omega.

The ion beam leading-in devices 1-14 adopt a three-electrode leading-out system, and the three-electrode leading-out system respectively consists of a metal circular plate electrode 3-6, a second metal cylindrical electrode 3-7 and a metal porous electrode 3-8.

The first metal cylinder electrode 3-4 generates orthogonal electromagnetic field under the action of the magnetic field power supply 3-5, and the electrons generated by the electron gun 1-1 horizontally drift into the ion source vacuum chamber 1-11 through the transmission window 1-8 under the action of the orthogonal electromagnetic field.

The filament power supply 3-1, the anode power supply 3-2, the high-voltage acceleration power supply 3-3, the magnetic field power supply 3-5 and the inhibition power supply 3-9 are sequentially started, wherein the starting sequence is filament power supply 3-1-magnetic field power supply 3-5-anode power supply 3-2-high-voltage acceleration power supply 3-3-inhibition power supply 3-9. The output rated voltages of the filament power supply 3-1, the anode power supply 3-2, the high-voltage accelerating power supply 3-3, the magnetic field power supply 3-5 and the suppressing power supply 3-9 are respectively 30V, 250V, 50KV, 20V and-2 KV, and the output rated currents are respectively 30A, 1A, 20mA, 15A and 20 mA.

Referring to fig. 5, the overall device operation flow respectively includes:

(1) and (5) preparing before starting up. And (4) turning on a cooling water pump 4-10 to turn on cooling water, and switching on an equipment input power supply 220 v.

(2) And opening a hatch door 4-12 on the outer side of the breeding irradiation cavity 4-1. In the process of opening the cabin door 4-12, the high-voltage power supply 3-3 of the power supply pack system needs to be ensured to be closed without beam current, the high valve 4-6 and the side pumping valve 4-5 are ensured to be closed, then the atmospheric valve 4-3 is opened, and when the internal and external air pressures of the breeding irradiation cavity 4-1 are balanced, the cabin door 4-12 is opened.

(3) And placing a sample. Sequentially placing samples on a seed rotating disc 4-11 at the inner side of a breeding irradiation cavity 4-1, placing 6 discs of samples at most once, closing a cabin door 4-12 after the placement is finished, wherein the breeding irradiation cavity 4-1 is in an atmospheric pressure state, and then extracting the internal air pressure of the breeding irradiation cavity 4-1 to ensure that the air pressure of a main cavity reaches 10^-3Pa or less.

(4) And (6) vacuumizing. Firstly opening a vacuum chamber molecular pump 4-7 and a vacuum chamber mechanical pump 4-9, then opening a preposed valve 4-8, and then opening a side pumping valve 4-5. When the air pressure in the breeding irradiation cavity 4-1 is 40-60pa, the side pumping valve 4-5 is closed, and the high valve 4-6 is opened.

(5) And the upper computer inputs the irradiation parameters of the samples.

(6) The ion source is turned on. Opening the air inlet valve 1-12 of the gun chamber, injecting working gas such as nitrogen and carbon dioxide into the ion source vacuum chamber 1-11 to maintain the pressure of the ion source vacuum chamber 1-11 at 5 × 10^-3Pa and 5X 10^-2Within the Pa range.

(7) And the upper computer sends an instruction and starts seed irradiation.

(8) And (5) after the irradiation is finished, taking out the sample, and performing shutdown operation.

The working principle of the invention is as follows:

the low-energy ion beam mutation breeding equipment mainly comprises a vacuum system (an electron gun, an ion source vacuum chamber and an ion beam breeding irradiation cavity), a power supply unit system and other multi-modules, wherein the electron gun heats a cathode filament and increases the energy of free electrons on the surface of the cathode filament. When the energy is enough to enable free electrons to overcome the constraint of a potential barrier, the electrons escape from the surface of the metal, an electron cloud is formed around the emitting surface of the cathode filament, negative high voltage is applied to the cathode, at the moment, the electrons directionally accelerate from the cathode to the anode under the action of the electric field force, the electrons enter the ion source vacuum chamber after passing through the transmission window under the action of the electron gun focusing coil, and because the nitrogen, carbon dioxide and other gases are injected into the ion source vacuum chamber through the gun chamber air inlet valve, the nitrogen, carbon dioxide and other gases enter the ion source vacuum chamber to be ionized to generate plasma, and ion beams are generated through the ion beam introducing device and obtain acceleration energy under the action of the high voltage electrode of the power supply system and are rapidly injected into the breeding irradiation cavity to irradiate seeds for breeding.

The vacuum system controls the start and stop operations of control modules such as an atmospheric valve 4-3, a gun chamber air inlet valve 1-12, a side pumping valve 4-5, a high valve 4-6, a front valve 4-8, a vacuum chamber molecular pump 4-7, a vacuum chamber mechanical pump 4-9, a cooling water pump 4-10 and the like through an upper computer software system and a lower computer controller PLC device, and provides a vacuum environment for ion beam impact irradiation.

Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.