Waveguide type GePb infrared photoelectric detector and manufacturing method thereof
阅读说明:本技术 波导型GePb红外光电探测器及其制造方法 (Waveguide type GePb infrared photoelectric detector and manufacturing method thereof ) 是由 汪巍 方青 涂芝娟 曾友宏 蔡艳 王庆 王书晓 余明斌 于 2019-03-28 设计创作,主要内容包括:本发明涉及光电子技术领域,尤其涉及一种波导型GePb红外光电探测器及其制造方法。所述波导型GePb红外光电探测器,包括硅衬底以及均位于所述硅衬底表面的波导层和器件结构;所述器件结构包括沿垂直于所述硅衬底的方向依次叠置的下接触层、吸收层和上接触层,所述吸收层的材料为Ge<Sub>1-x</Sub>Pb<Sub>x</Sub>,其中,0<x<1;所述波导层中的光信号通过倏逝波耦合进入所述器件结构。本发明使得光电探测器在短波红外到中波红外波段都能实现高效吸收。(The invention relates to the technical field of photoelectrons, in particular to a waveguide type GePb infrared photoelectric detector and a manufacturing method thereof. The waveguide type GePb infrared photoelectric detector comprises a silicon substrate, a waveguide layer and a device structure, wherein the waveguide layer and the device structure are positioned on the surface of the silicon substrate; the device structure comprises a lower contact layer, an absorption layer and an upper contact layer which are sequentially stacked in the direction perpendicular to the silicon substrate, wherein the absorption layer is made of Ge 1‑x Pb x Wherein, 0<x<1; the above-mentionedOptical signals in the waveguide layer are coupled into the device structure by evanescent waves. The invention enables the photoelectric detector to realize high-efficiency absorption in the short-wave infrared to medium-wave infrared bands.)
1. A waveguide type GePb infrared photoelectric detector is characterized by comprising a silicon substrate, a waveguide layer and a device structure, wherein the waveguide layer and the device structure are positioned on the surface of the silicon substrate; the device structure comprises a lower contact layer, an absorption layer and an upper contact layer which are sequentially stacked along the direction perpendicular to the silicon substrate, wherein the absorption layer is made of a materialGe1-xPbxWherein, 0<x<1; the optical signal in the waveguide layer is coupled into the device structure by evanescent waves.
2. The waveguiding GePb infrared photodetector of claim 1, wherein the device structure further comprises:
a first buffer layer between the lower contact layer and the absorber layer;
a second buffer layer between the absorber layer and the upper contact layer.
3. The waveguide type GePb infrared photodetector of claim 2, wherein the first buffer layer and the second buffer layer are both Ge or SiGe.
4. The waveguide type GePb infrared photodetector of claim 1, wherein the material of the waveguide layer is silicon; the lower contact layer is made of a silicon material with first doped ions; the material of the upper contact layer is Ge material with second doping ions, and the second doping ions are opposite to the first doping ions in conduction type.
5. The waveguide-type GePb infrared photodetector of claim 1, wherein 0.001< x < 0.02.
6. A manufacturing method of a waveguide type GePb infrared photoelectric detector is characterized by comprising the following steps:
providing a silicon substrate;
forming a waveguide layer on the surface of the silicon substrate;
forming a device structure on the surface of the silicon substrate, wherein the device structure comprises a lower contact layer, an absorption layer and an upper contact layer which are sequentially stacked along the direction vertical to the silicon substrate, and the absorption layer is made of Ge1-xPbxWherein, 0<x<1; the optical signal in the waveguide layer is coupled into the waveguide layer by evanescent waveThe device structure is described.
7. The method of manufacturing a waveguide-type GePb infrared photodetector according to claim 6, wherein the silicon substrate includes a bottom layer silicon, a buried oxide layer, and a top layer silicon which are stacked in this order along an axial direction thereof; the specific steps for forming the waveguide layer on the surface of the silicon substrate comprise:
and etching the top silicon layer to form the waveguide layer and define a device region in the top silicon layer.
8. The method of claim 7, wherein the step of forming a device structure on the surface of the silicon substrate comprises:
implanting first doping ions into the device region to form the lower contact layer;
forming a first buffer layer on the lower contact surface;
forming an absorption layer on the surface of the first buffer layer;
forming a second buffer layer on the surface of the absorption layer;
and forming an upper contact layer on the surface of the second buffer layer.
9. The method of claim 8, wherein the step of forming an absorption layer on the surface of the lower contact layer comprises:
depositing a Ge material on the surface of the lower contact layer to form a pre-absorption layer;
injecting Pb ions from the surface of the pre-absorption layer, which is far away from the lower contact layer, and forming Ge as the material1-xPbxThe absorbing layer of (1).
10. The method of claim 6, wherein 0.001< x < 0.02.
Technical Field
The invention relates to the technical field of photoelectrons, in particular to a waveguide type GePb infrared photoelectric detector and a manufacturing method thereof.
Background
The photoelectric detector has wide application, covers various fields of military and national economy, and is mainly used for ray measurement and detection, industrial automatic control, photometric measurement and the like in visible light and short wave infrared bands.
The infrared photoelectric detector has wide application in the fields of communication, night vision, guidance, astronomical observation, biomedical treatment and the like. The infrared detectors commonly used today are mainly group iii-v material photodetectors and group ii-v material photodetectors. However, the iii-v materials and ii-v materials have a problem of incompatibility with the Si-based CMOS (Complementary Metal oxide semiconductor) standard process platform, increasing device cost and reducing device reliability.
Compared with the traditional III-V family infrared photoelectric detector and II-V family infrared photoelectric detector, the IV family infrared photoelectric detector is compatible with the Si-based CMOS process in the preparation process, and has the potential advantages of small volume, easy integration, low cost, high performance and the like. Ge photodetectors based On Si substrates or SOI (Silicon On Insulator) substrates have gained wide application in the fields of communications and sensing. However, when the wavelength of a single Ge material is greater than 1.55 micrometers, the absorption coefficient is sharply reduced, so that the Ge photodetector cannot meet the detection requirements of short-wave infrared and even middle-infrared bands, and the detection range of the Ge photodetector is limited. Therefore, a vertical GeSn infrared photodetector has appeared in the prior art, so as to solve the problem that the Ge photodetector cannot meet the detection requirements of short wave infrared and even middle infrared wave bands. However, epitaxial growth of GeSn materials is extremely challenging, limited by the extremely low solid solubility of Sn in Ge.
Therefore, how to widen the detection range of the Ge photodetector is a technical problem to be solved urgently at present.
Disclosure of Invention
The invention provides a waveguide type GePb infrared photoelectric detector and a manufacturing method thereof, which are used for solving the problem that the detection range of the existing Ge photoelectric detector is narrow.
In order to solve the above problems, the present invention provides a waveguide type GePb infrared photodetector, which comprises a silicon substrate, and a waveguide layer and a device structure both located on the surface of the silicon substrate; the device structure comprises a lower contact layer, an absorption layer and an upper contact layer which are sequentially stacked in the direction perpendicular to the silicon substrate, wherein the absorption layer is made of Ge1-xPbxWherein, 0<x<1; the optical signal in the waveguide layer is coupled into the device structure by evanescent waves.
Preferably, the device structure further comprises:
a first buffer layer between the lower contact layer and the absorber layer;
a second buffer layer between the absorber layer and the upper contact layer.
Preferably, the first buffer layer and the second buffer layer are both made of Ge or SiGe.
Preferably, the material of the waveguide layer is silicon; the lower contact layer is made of a silicon material with first doped ions; the material of the upper contact layer is Ge material with second doping ions, and the second doping ions are opposite to the first doping ions in conduction type.
Preferably, 0.001< x < 0.02.
In order to solve the above problems, the present invention further provides a method for manufacturing a waveguide type GePb infrared photodetector, comprising the steps of:
providing a silicon substrate;
forming a waveguide layer on the surface of the silicon substrate;
forming a device structure on the surface of the silicon substrate, wherein the device structure comprises a lower contact layer, an absorption layer and an upper contact layer which are sequentially stacked along the direction vertical to the silicon substrate, and the absorption layer is made of Ge1-xPbxWherein, 0<x<1; the optical signal in the waveguide layer is coupled into the device structure by evanescent waves.
Preferably, the silicon substrate comprises a bottom layer silicon, a buried oxide layer and a top layer silicon which are sequentially stacked along the axial direction of the silicon substrate; the specific steps for forming the waveguide layer on the surface of the silicon substrate comprise:
and etching the top silicon layer to form the waveguide layer and define a device region in the top silicon layer.
Preferably, the specific steps of forming the device structure on the surface of the silicon substrate include:
implanting first doping ions into the device region to form the lower contact layer;
forming a first buffer layer on the lower contact surface;
forming an absorption layer on the surface of the first buffer layer;
forming a second buffer layer on the surface of the absorption layer;
and forming an upper contact layer on the surface of the second buffer layer.
Preferably, the step of forming the absorption layer on the surface of the lower contact layer comprises:
depositing a Ge material on the surface of the lower contact layer to form a pre-absorption layer;
injecting Pb ions from the surface of the pre-absorption layer, which is far away from the lower contact layer, and forming Ge as the material1-xPbxThe absorbing layer of (1).
Preferably, 0.001< x < 0.02.
The invention relates to a waveguide GePb infrared photoelectric detector and a manufacturing method thereof, wherein Ge is arranged in an absorption layer of a device structure1-xPbxThe material enables the photoelectric detector to realize high-efficiency absorption in the short-wave infrared to medium-wave infrared bands. Easy integration with Si compared to iii-v infrared photodetectors; compared with the existing Ge photoelectric detector, the photoelectric detector has wider detection range; compared with a vertical incidence type photoelectric detector, the photoelectric detector is easier to integrate with other optical active or passive devices, and has higher detection sensitivity.
Drawings
FIG. 1 is a schematic diagram of the overall structure of a waveguide GePb infrared photodetector according to the embodiment of the present invention;
FIG. 2 is a schematic cross-sectional view of a device structure in a waveguide type GePb infrared photodetector according to an embodiment of the present invention;
FIG. 3 is a flow chart of a method for manufacturing a waveguide type GePb infrared photodetector according to an embodiment of the present invention;
fig. 4A to 4F are schematic cross-sectional views of the main processes of the present embodiment in the process of manufacturing a waveguide type GePb infrared photodetector.
Detailed Description
The following describes in detail specific embodiments of the waveguide type GePb infrared photodetector and the method for manufacturing the same according to the present invention with reference to the accompanying drawings.
The present embodiment provides a waveguide type GePb infrared photodetector, fig. 1 is a schematic diagram of an overall structure of the waveguide type GePb infrared photodetector according to the present embodiment, and fig. 2 is a schematic diagram of a cross section of a device structure in the waveguide type GePb infrared photodetector according to the present embodiment. As shown in fig. 1 and fig. 2, the waveguide type GePb infrared photodetector provided in this embodiment includes a
Specifically, the
The component of Pb (i.e. the value of x) in the
In order to make the detector have a wider detection range, for example, to make the detection range of the infrared photodetector extend to more than 3 μm to adapt to different detection requirements, it is preferable that 0.001< x < 0.02.
In order to reduce the stress inside the device structure, thereby further improving the performance of the infrared photodetector, preferably, the device structure further includes:
a
a
Because only a small content of Pb component is needed to be introduced in the embodiment, the detection range of the photoelectric detector can be extended. Therefore, the
Preferably, the materials of the
Preferably, the material of the
The first doped ions are N-type ions, and the second doped ions are P-type ions; or, the first doped ions are P-type ions, and the second doped ions are N-type ions. The first doped ions are N-type ions and the second doped ions are P-type ions. Specifically, the
Moreover, the present embodiment further provides a method for manufacturing a waveguide type GePb infrared photodetector, fig. 3 is a flow chart of a method for manufacturing a waveguide type GePb infrared photodetector according to the present embodiment, fig. 4A to 4F are schematic cross-sectional views of main processes in a process of manufacturing a waveguide type GePb infrared photodetector according to the present embodiment, and the structure of the waveguide type GePb infrared photodetector manufactured according to the present embodiment can refer to fig. 1 and fig. 2. As shown in fig. 1 to 3 and fig. 4A to 4F, the method for manufacturing a waveguide type GePb infrared photodetector according to the present embodiment includes the following steps:
step S31, a silicon substrate is provided.
Step S32, forming a
Preferably, the silicon substrate includes a
the top silicon 22 is etched to form the
Specifically, the top silicon 22 in the silicon substrate may be etched by using photolithography and dry etching processes to form the
Step S33, forming a device structure on the surface of the silicon substrate, wherein the device structure comprises a
Preferably, the specific steps of forming the device structure on the surface of the silicon substrate include:
implanting first doping ions into the device region 40 to form the
forming a
forming an
forming a
forming an
Preferably, the step of forming the
depositing a Ge material on the surface of the
injecting Pb ions from the surface of the pre-absorption layer, which is far away from the lower contact layer, and forming Ge as the material1-xPbx
The first doped ions are N-type ions and the second doped ions are P-type ions. Specifically, after the device region 40 is defined in the top silicon layer 22, a photolithography process is first used to define the range of the
Then, injecting Pb ions from the surface of the
Then, depositing a Ge material or a SiGe material on the surface of the
Then, depositing a passivation material on the surfaces of the
In order to make the detector have a wider detection range, for example, to make the detection range of the infrared photodetector extend to more than 3 μm to adapt to different detection requirements, it is preferable that 0.001< x < 0.02.
In the waveguide type GePb infrared photoelectric detector and the manufacturing method thereof, Ge is arranged in an absorption layer of a device structure1-xPbxThe material enables the photoelectric detector to realize high-efficiency absorption in the short-wave infrared to medium-wave infrared bands. Easy integration with Si compared to iii-v infrared photodetectors; compared with the existing Ge photoelectric detector, the photoelectric detector has wider detection range; compared with a vertical incidence type photoelectric detector, the photoelectric detector is easier to integrate with other optical active or passive devices, and has higher detection sensitivity.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and decorations can be made without departing from the principle of the present invention, and these modifications and decorations should also be regarded as the protection scope of the present invention.