阅读说明：本技术 一种消除微波放大器高频自激电路、方法 (Circuit and method for eliminating high-frequency self-excitation of microwave amplifier ) 是由 王海军 于 2020-06-23 设计创作，主要内容包括：本发明公开了一种消除微波放大器高频自激电路、方法,第一三极管Q1源极串联第二电阻R2第一端形成一指有源器件CPW1,第二三级管Q2源极串联第三电阻R3第一端形成一指有源器件CPW2,其中,第二电阻R2第二端与第三电阻R3第二端并联且通过Via1地过孔串联电感L0接地,第三三极管Q3源极串联第四电阻R4第一端形成一指有源器件CPW3,第四三级管Q4源极串联第五电阻R5第一端形成一指有源器件CPW4；通过控制任意偶数指数有源器件的源极的寄生参量,使得每一有源器件的源极寄生参量一致,避免整个电路中出现自激高频不稳定的现象,降低整个电路的自激反馈量。(The invention discloses a circuit and a method for eliminating high-frequency self-excitation of a microwave amplifier, wherein a first triode Q1 source is connected with a first end of a second resistor R2 in series to form a finger active device CPW1, a second triode Q2 source is connected with a first end of a third resistor R3 in series to form a finger active device CPW2, wherein a second end of the second resistor R2 is connected with a second end of the third resistor R3 in parallel and is grounded through a Via hole series inductor L0 in Via1, a first end of a third triode Q3 source is connected with a fourth resistor R4 in series to form a finger active device CPW3, and a first end of a fourth triode Q4 source is connected with a fifth resistor R5 in series to form a finger active device CPW 4; by controlling the parasitic parameters of the source electrodes of any even-numbered active devices, the parasitic parameters of the source electrodes of all the active devices are consistent, the phenomenon of unstable self-excitation high frequency in the whole circuit is avoided, and the self-excitation feedback quantity of the whole circuit is reduced.)

1. A circuit for eliminating high-frequency self-excitation of a microwave amplifier is characterized in that a first triode Q1 is connected with a source of a second resistor R2 in series to form a finger active device CPW1, a second triode Q2 is connected with a source of a third resistor R3 in series to form a finger active device CPW2, a second resistor R2 is connected with a second end of a third resistor R3 in parallel and grounded through a Via series inductor L0 through Via1, a first end of a third triode Q3 is connected with a source of a fourth resistor R4 in series to form a finger active device CPW3, a first end of a fourth triode Q4 is connected with a source of a fifth resistor R5 in series to form a finger active device CPW4, a second end of a fourth resistor R4 is connected with a second end of a fifth resistor R5 in parallel and grounded through a Via series inductor L01 through a Via Via Via2, a drain of the first triode Q1 is connected with a gate of the second triode Q2, a third triode Q2, a drain 2 and a drain 2 of the third triode Q2, and a drain 2, respectively, The drain electrode of the third triode Q3 and the drain electrode of the fourth triode Q4.

2. A circuit for canceling high frequency self-excitation of a microwave amplifier as defined in claim 1, wherein: at least one group of one-finger active device CPW1 and one-finger active device CPW2 form a unit cell T, wherein the unit cell T is an even number of unit cells.

3. A microwave amplifier high frequency self-excitation cancellation circuit according to claim 1 or 2, wherein: every two unit cells T are connected in parallel through a first interconnecting line and a second interconnecting line, wherein the first interconnecting line is respectively connected with a grid G of an active device built in an even number of unit cells T, the second interconnecting line is connected in series with a first resistor R1 and is respectively connected with a drain D of the active device built in the even number of unit cells T, and the first resistor R1 is located between the drains D of the active devices built in the even number of unit cells T and is used for inhibiting odd mode and even mode oscillation of the whole circuit.

4. A circuit for canceling high frequency self-excitation of a microwave amplifier as defined in claim 2, wherein: the grounding hole GND of the front active device in the even unit cell T bypasses the chip liner and is led out to the PCB to be grounded in a bonding wire or a reverse buckling mode to form a parasitic inductance L1, and the grounding hole GND of the tail active device in the even unit cell T is installed at the chip liner in a matching mode and is grounded through the PCB to form a parasitic inductance L2 for controlling the risk of self-excitation of the whole circuit.

5. A circuit for canceling high frequency self-excitation of a microwave amplifier as defined in claim 3, wherein: the resistance value range of the first resistor R1 is 10-1000 ohms.

6. A method for eliminating high-frequency self-excitation of a microwave amplifier is characterized by comprising the following steps: the method comprises the following steps:

s1, establishing even number unit cells T by optimizing layout, wherein each unit cell T comprises any even number index active device;

step S2, keeping the source parasitic parameters of any even-number index active device in the even-number unit cell T consistent, and reducing the self-excitation feedback quantity of the whole circuit;

step S3, connecting the even number unit cells T in parallel in pairs through a first interconnecting line and a second interconnecting line respectively, wherein the first interconnecting line is connected with the gates G of the active devices built in the even number unit cells T respectively, the second interconnecting line is connected with a first resistor R1 in series and is connected with the drains D of the active devices built in the even number unit cells T respectively, and the first resistor R1 is located between the drains D of the active devices built in the even number unit cells T and is used for inhibiting odd mode and even mode oscillation of the whole circuit;

step S4, installing the grounding hole GND of the last active device in the even unit cell T in a matching way at the chip lower line and grounding the chip lower line through a PCB (printed Circuit Board) to form a parasitic inductor L2;

and S5, leading out the grounding hole GND of the front active device in the even unit cell T to a PCB for grounding by bypassing the chip lower and in a bonding wire or reverse buckling mode to form a parasitic inductor L1 for controlling the risk of self-excitation of the whole circuit.

Technical Field

The invention relates to the technical field of semiconductor radio frequency circuits, in particular to a circuit and a method for eliminating high-frequency self-excitation of a microwave amplifier.

Background

Monolithic microwave amplifier (MMIC) is widely applied to the fields of mobile communication, satellite communication, radar detection, electronic countermeasure and the like, is a key core device for realizing intellectualization, light weight and integration, along with the continuous evolution of communication technology, the performance index of the monolithic microwave amplifier is more and more rigorous, the stability and redundancy of the circuit are influenced while the power, efficiency and linearity indexes are continuously improved, a circuit designer is forced to carry out balance consideration between the performance and the stability, if the control is not good, the self-excitation phenomenon often occurs, the amplifier is burnt seriously, and the self-excitation phenomenon is the problem frequently encountered in the monolithic microwave amplifier from the outside, and comprises low-temperature self-excitation, low-voltage self-excitation, odd-even mode self-excitation, low-frequency self-excitation and high-frequency self-excitation, therefore, how to eliminate the self-excitation of the circuit is a very key and important implementation measure, in the prior art, the high-frequency self-excitation phenomenon of the monolithic microwave amplifier can not be eliminated by peripheral devices generally.

Disclosure of Invention

The invention aims to provide a circuit and a method for eliminating high-frequency self-excitation of a microwave amplifier, which have the mode of eliminating or inhibiting a high-frequency parasitic feedback passband, so that the circuit has the advantages of realizing unidirectional transmission of the circuit and improving the stability, and the problems in the prior art are solved.

In order to achieve the purpose, the invention provides the following technical scheme: a circuit for eliminating high-frequency self-excitation of a microwave amplifier is characterized in that a source of a first triode Q1 is connected with a first end of a second resistor R2 in series to form a finger active device CPW1, a source of a second triode Q2 is connected with a first end of a third resistor R3 in series to form a finger active device CPW2, a second end of the second resistor R2 is connected with a second end of a third resistor R3 in parallel and grounded through a Via hole series inductor L0 through Via1, a source of a third triode Q3 is connected with a first end of a fourth resistor R4 in series to form a finger active device CPW3, a source of a fourth triode Q4 is connected with a first end of a fifth resistor R862 in series to form a finger active device CPW4, a second end of the fourth resistor R4 is connected with a second end of a fifth resistor R5 in parallel and grounded through a Via hole series inductor L01 through a Via Via2, a gate of the first triode Q1 is connected with a drain electrode of the second triode Q2, a drain electrode of the third triode Q2, and a drain electrode 2, a drain electrode of the third triode Q2 is connected with a drain, The drain electrode of the third triode Q3 and the drain electrode of the fourth triode Q4.

As an improvement of the circuit for eliminating the high-frequency self-excitation of the microwave amplifier, at least one group of one finger active device CPW1 and one finger active device CPW2 form a unit cell T, wherein the unit cell T is an even number of unit cells.

As an improvement of the microwave amplifier high-frequency self-excitation eliminating circuit, every two unit cells T are connected in parallel through a first interconnection line and a second interconnection line, wherein the first interconnection line is respectively connected with a grid G of an active device built in an even number of unit cells T, the second interconnection line is connected with a first resistor R1 in series and is respectively connected with a drain D of the active device built in the even number of unit cells T, and the first resistor R1 is located between the drains D of the active devices built in the even number of unit cells T and used for inhibiting odd mode and even mode oscillation of the whole circuit.

As an improvement of the high-frequency self-excitation circuit for eliminating the microwave amplifier, the grounding hole GND of the front-electrode active device in the even unit cell T bypasses the chip liner and is led out to the PCB to be grounded in a bonding wire or a back-off mode to form a parasitic inductance L1, and the grounding hole GND of the tail-electrode active device in the even unit cell T is installed at the chip liner in a matching mode and is grounded through the PCB to form a parasitic inductance L2 for controlling the risk of self-excitation of the whole circuit.

As an improvement of the circuit for eliminating the high-frequency self-excitation of the microwave amplifier, the resistance value range of the first resistor R1 is 10-1000 ohms.

A method for eliminating high-frequency self-excitation of a microwave amplifier is characterized by comprising the following steps: the method comprises the following steps:

s1, establishing even number unit cells T by optimizing layout, wherein each unit cell T comprises any even number index active device;

step S2, keeping the source parasitic parameters of any even-number index active device in the even-number unit cell T consistent, and reducing the self-excitation feedback quantity of the whole circuit;

step S3, connecting the even number unit cells T in parallel in pairs through a first interconnecting line and a second interconnecting line respectively, wherein the first interconnecting line is connected with the gates G of the active devices built in the even number unit cells T respectively, the second interconnecting line is connected with a first resistor R1 in series and is connected with the drains D of the active devices built in the even number unit cells T respectively, and the first resistor R1 is located between the drains D of the active devices built in the even number unit cells T and is used for inhibiting odd mode and even mode oscillation of the whole circuit;

step S4, installing the grounding hole GND of the last active device in the even unit cell T in a matching way at the chip lower line and grounding the chip lower line through a PCB (printed Circuit Board) to form a parasitic inductor L2;

and S5, leading out the grounding hole GND of the front active device in the even unit cell T to a PCB for grounding by bypassing the chip lower and in a bonding wire or reverse buckling mode to form a parasitic inductor L1 for controlling the risk of self-excitation of the whole circuit.

Compared with the prior art, the invention has the following beneficial effects:

1. by controlling the parasitic parameters of the source electrode or the source electrode of any even-numbered index active device, the parasitic parameters of the source electrode or the source electrode of each device are consistent, the phenomenon of self-excitation high-frequency instability in the whole circuit is avoided, and the self-excitation feedback quantity of the whole circuit is reduced;

2. secondly, the grid electrodes of any even-number index active devices are connected in parallel, and meanwhile, a 10-1000 ohm resistor is connected in series between drain electrodes D, so that the microwave amplifier is different from the prior art, the problem that the single-chip microwave amplifier often encounters odd and even mode self-excitation is solved, the effect of inhibiting odd mode and even mode oscillation of the whole circuit is achieved, and the self-excitation feedback quantity of the whole circuit is further reduced;

3. finally, by setting the mode that the grounding holes of the front active device and the tail active device in any even number of unit cells T are not connected with the same chip substrate, parasitic inductance L shared by the front and the rear stages of the chip is eliminated, a feedback path between the front and the rear stages in the chip substrate is cut off, namely the parasitic inductance L, self-excitation feedback quantity of the whole circuit is eliminated, the self-excitation oscillation condition is broken, the risk of the whole circuit for self-excitation is effectively controlled, and the high-frequency self-excitation phenomenon of the circuit is further effectively eliminated.

Drawings

Fig. 1 is a schematic diagram illustrating source parameter control of a four-finger active device according to an embodiment of the present invention.

FIG. 2 is a schematic diagram illustrating the elimination of high frequency instability regions for stability in one embodiment of the present invention.

Fig. 3 is a schematic diagram of a parallel connection based on four-finger active devices according to an embodiment of the present invention.

Fig. 4 is a schematic diagram of grounding of the front active device and the end active device of the even unit cell T according to another embodiment of the present invention.

The figures are labeled as follows: 1-first interconnecting wire, 2-second interconnecting wire, 3-chip substrate and 4-PCB board.

Detailed Description

The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all embodiments, and all other embodiments obtained by a person of ordinary skill in the art without creative efforts based on the embodiments of the present invention belong to the protection scope of the present invention.

In the description of the present invention, it is to be understood that the terms "upper", "lower", "front", "rear", "left", "right", "top", "bottom", "inner", "outer", and the like, indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, are merely for convenience in describing the present invention and simplifying the description, and do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be construed as limiting the present invention.

A circuit and a method for eliminating high-frequency self-excitation of a microwave amplifier are provided, as an embodiment of the invention, as shown in FIG. 1, and comprise the following steps:

step S1, optimizing layout, wherein the specific way of optimizing board layout is as follows: a second resistor R2 is connected in series with the source of a first triode Q1 to form a finger active device CPW1 (Coplanar-Waveguide); a second triode Q2 is connected with a third resistor R3 in series through a source electrode to form a finger active device CPW 2; a third triode Q3 is connected with a fourth resistor R4 in series through a source electrode to form a finger active device CPW 3; a fourth triode Q4 is connected with a fifth resistor R5 in series through a source electrode to form a finger active device CPW 4; wherein, after the gate of the first triode Q1 is connected with the gate of the second triode Q2, the gate of the third triode Q3 and the gate of the fourth triode Q4 in sequence, the inverted output end of the gate of the first triode Q1 is led out of the PCB (printedcircutboard) board 4, the drain of the first triode Q1 is connected with the drain of the second triode Q2, the drain of the third triode Q3 and the drain of the fourth triode Q4 in sequence, and then the PCB board 4 is led out, at this time, the measurement ensures that the sources of the four-finger active devices CPW1, CPW2, CPW3 and CPW4, that is, the parasitic parameters TL1, TL2, TL3 and TL4 of the sources and the grounding holes are consistent as much as possible, after the parasitic parameters are consistent, one of the two finger active devices CPW1 and one finger active device CPW1 in the unit cell T1 are connected in parallel and then grounded through the Via hole Via a, the self-excitation feedback quantity of the whole circuit is reduced, the resistance values of the second resistor R2, the third resistor R3, the fourth resistor R4 and the fifth resistor R5 are the same, the parasitic parameters of the source electrode or the source electrode of any even-number index active device are controlled, so that the parasitic parameters of the source electrode or the source electrode of each device are consistent, the phenomenon of unstable self-excitation high frequency in the whole circuit is avoided, and the self-excitation feedback quantity of the whole circuit is reduced;

as shown in fig. 2, when the sources of the four-finger active devices CPW1, CPW2, CPW3 and CPW4, that is, parasitic parameters TL1, TL2, TL3 and TL4 of the sources and the ground holes are as consistent as possible, the X-axis direction is customized as a frequency, the value range is [0ghz and 100ghz ], the Y-axis direction is customized as a maximum gain value, the value range is [0db and 30db ], and a stability diagram of the whole circuit after eliminating high-frequency self-excitation is established, wherein a point m2 approaches to an origin value interval and is a low-frequency unstable area of the whole circuit, a point m2 and a point m1 are stable areas of the whole circuit, and a point m1 approaches to a point 100ghz interval and is a high-frequency unstable area of the whole circuit;

step S3, as shown in fig. 3, after step S1 is completed, a unit cell T2 having the same layout as that of the unit cell T1 is established, and the unit cell T1 and the unit cell T2 are connected in parallel two by a first interconnection line 1 and a second interconnection line 2, wherein one end of the first interconnection line 1 is connected to the gate G of the active device established in the unit cell T1, i.e. the gate of the first triode Q1, the other end is connected to the gate G of the active device established in the unit cell T2, i.e. the gate of the fifth triode Q5, one end of the second interconnection line 2 is connected in series with a first resistor R1 and then connected to the drain D of the active device established in the unit cell T1, i.e. the drain of the fourth triode Q4, the other end is connected to the drain D of the active device established in the unit cell T2, i.e. the drain of the eighth triode Q8, the first resistor is located between the drains D of the active devices respectively established in the unit cell T36, the grid electrodes of active devices with any even number of indexes are connected in parallel, and meanwhile, 10-1000 ohm resistors are connected in series between drain electrodes D, so that the microwave amplifier is different from the prior art, the problem that a monolithic microwave amplifier often encounters odd-even mode self-excitation is solved, the effect of inhibiting odd-mode and even-mode oscillation of the whole circuit is achieved, and the self-excitation feedback quantity of the whole circuit is further reduced, the resistance value range of the first resistor R1 is 10-1000 ohm, for example, the resistance value range of the first resistor R1 is any one value or the range value between any two values of 10-100 ohm, 100-300 ohm, 300-500 ohm, 500-800 ohm and 800-1000 ohm;

step S4, as an embodiment of the present invention, as shown in fig. 4, based on step S1, the measurement ensures that the parasitic parameters TL1, TL2, TL3, TL4 and the ground holes of the sources, i.e., the sources of the four-finger active devices CPW1, CPW2, CPW3 and CPW4, are as consistent as possible, and after the parasitic parameters are consistent, the ground hole GND of the last active device in the single cell T1 is installed at the chip substrate in a matching manner and grounded through the PCB board 4, so as to form a parasitic inductance L2;

step S5, as shown in fig. 4, the ground hole GND of the front active device in the unit cell T1 is led to the PCB 4 to be grounded by bypassing the chip substrate and by a bonding wire or a back-off manner, so as to form a parasitic inductance L1 for controlling the risk of the whole circuit that self-excites, the parasitic inductance L shared by the front and back stages of the chip is eliminated by setting the ground holes of the front active device and the back active device in any even number of unit cells T not to be connected to the same chip substrate, so that the feedback path between the front and back stages in the chip substrate, i.e. the parasitic inductance L is cut off, thereby eliminating the self-excited feedback quantity of the whole circuit, breaking the condition of self-excited oscillation, effectively controlling the risk of the whole circuit that self-excites, and further effectively eliminating the high-frequency phenomenon of the circuit.

While there have been shown and described the fundamental principles and essential features of the invention and advantages thereof, it will be apparent to those skilled in the art that the invention is not limited to the details of the foregoing exemplary embodiments, but is capable of other specific forms without departing from the spirit or essential characteristics thereof; the present embodiments are therefore to be considered in all respects as illustrative and not restrictive, the scope of the invention being indicated by the appended claims rather than by the foregoing description, and all changes which come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein, and any reference signs in the claims are not intended to be construed as limiting the claim concerned.

Furthermore, it should be understood that although the present description refers to embodiments, not every embodiment may contain only a single embodiment, and such description is for clarity only, and those skilled in the art should integrate the description, and the embodiments may be combined as appropriate to form other embodiments understood by those skilled in the art.