Bias circuit with temperature compensation, amplifying device and amplifying equipment
阅读说明：本技术 具有温度补偿的偏置电路、放大装置以及放大设备 (Bias circuit with temperature compensation, amplifying device and amplifying equipment ) 是由 崔圭珍 赵济熙 于 2019-11-06 设计创作，主要内容包括：本发明提供一种具有温度补偿的偏置电路、放大装置以及放大设备。所述偏置电路包括：电流产生电路、偏置输出电路和温度补偿电路,所述电流产生电路基于参考电流产生内部基极电流,所述偏置输出电路基于所述内部基极电流产生基极偏置电流并且将所述基极偏置电流输出到放大电路,所述温度补偿电路基于反映周围温度改变的温度电压来调节所述基极偏置电流。(The invention provides a bias circuit with temperature compensation, an amplifying device and an amplifying device. The bias circuit includes: a current generation circuit that generates an intrinsic base current based on a reference current, a bias output circuit that generates a base bias current based on the intrinsic base current and outputs the base bias current to an amplification circuit, and a temperature compensation circuit that adjusts the base bias current based on a temperature voltage reflecting a change in ambient temperature.)
1. A bias circuit, comprising:
a current generation circuit configured to generate an intrinsic base current based on a reference current;
a bias output circuit configured to generate a base bias current based on the intrinsic base current and output the base bias current to an amplification circuit; and
a temperature compensation circuit configured to adjust the base bias current based on a temperature voltage reflecting an ambient temperature change.
2. The bias circuit of claim 1, wherein the current generation circuit comprises:
a first resistor having a first end connected to a terminal of the reference current;
a first diode and a second diode connected in series with each other between a second end of the first resistor and a first end of a second resistor; and
the second resistor is connected between the second diode and ground.
3. The bias circuit of claim 2, wherein the current generation circuit is configured to output the temperature voltage at a connection node between the first diode and the second diode.
4. The bias circuit according to claim 3, wherein the second diode is configured to have the same temperature characteristic as that of a base-emitter PN junction of an amplification transistor included in the amplification circuit.
5. The bias circuit of claim 4, wherein the bias output circuit comprises:
an output transistor having a base connected to a connection node between the first resistor and the first diode, a collector connected to a terminal of a power supply voltage, and an emitter connected to the amplifying circuit.
6. The bias circuit of claim 5, wherein the output transistor is configured to amplify a current of the intrinsic base current input to the base and output the base bias current through the emitter.
7. The bias circuit of claim 6, wherein the temperature compensation circuit comprises:
a third resistor having a first end connected to the connection node between the first diode and the second diode;
a fourth resistor having a first end connected to the base of the output transistor;
a compensation transistor having a base connected to the second end of the third resistor, a collector connected to the second end of the fourth resistor, and an emitter connected to ground; and
a first capacitor connected between the base of the compensation transistor and ground,
wherein the fourth resistor is configured to provide an isolation function between the collector of the compensation transistor and the base of the output transistor, and
the third resistor and the first capacitor are configured to form a low pass filter.
8. The biasing circuit of claim 7, wherein the compensation transistor is configured to adjust a current sunk to ground of the intrinsic base current according to a magnitude of the temperature voltage.
9. An amplifying device comprising:
a current generation circuit configured to generate an intrinsic base current based on a reference current;
a bias output circuit configured to generate a base bias current based on the intrinsic base current;
an amplification circuit comprising an amplification transistor configured to receive the base bias current; and
a temperature compensation circuit configured to adjust the base bias current based on a temperature voltage reflecting an ambient temperature change.
10. The amplifying device according to claim 9, wherein the current generating circuit comprises:
a first resistor having a first end connected to a terminal of the reference current;
a first diode and a second diode connected in series with each other between a second end of the first resistor and a first end of a second resistor; and
the second resistor is connected between the second diode and ground.
11. The amplification apparatus according to claim 10, wherein the current generation circuit is configured to output the temperature voltage at a connection node between the first diode and the second diode.
12. The amplification apparatus according to claim 11, wherein the second diode is configured to have the same temperature characteristic as that of a base-emitter PN junction of the amplification transistor.
13. The amplification apparatus of claim 12, wherein the bias output circuit comprises:
an output transistor having a base connected to a connection node between the first resistor and the first diode, a collector connected to a terminal of a power supply voltage, and an emitter connected to a base of the amplifying transistor.
14. The amplifying device according to claim 13, wherein the output transistor is configured to amplify a current of the intrinsic base current input to the base and output the base bias current through the emitter.
15. The amplification apparatus of claim 14, wherein the temperature compensation circuit comprises:
a third resistor having a first end connected to the connection node between the first diode and the second diode;
a fourth resistor having a first end connected to the base of the output transistor;
a compensation transistor having a base connected to the second end of the third resistor, a collector connected to the second end of the fourth resistor, and an emitter connected to ground; and
a first capacitor connected between the base of the compensation transistor and ground, wherein,
the fourth resistor is configured to provide an isolation function between the collector of the compensation transistor and the base of the output transistor, and
the third resistor and the first capacitor are configured to form a low pass filter.
16. The amplification device of claim 15, wherein the compensation transistor is configured to adjust a current sunk to ground of the intrinsic base current according to a magnitude of the temperature voltage.
17. An amplifying device comprising:
a first transistor configured to generate and output a base bias current based on the received intrinsic base current;
a second transistor configured to receive the base bias current; and
a third transistor configured to adjust a base voltage of the second transistor based on an ambient temperature change.
18. The amplification apparatus of claim 17, further comprising:
a first diode; and
a second diode connected in series with the first diode, wherein,
a temperature voltage corresponding to the ambient temperature change is output to a base of the third transistor at a connection node between the first diode and the second diode.
19. The amplification apparatus according to claim 18, wherein a temperature characteristic of the second diode is the same as a temperature characteristic of the second transistor.
20. The amplifying device of claim 18, wherein the third transistor is configured to adjust a magnitude of current sinking to ground of the intrinsic base current based on a magnitude of the temperature voltage.
Technical Field
The following description relates to a bias circuit and an amplifying device having a temperature compensation function.
Background
Generally, a wireless communication system includes an amplifying device for amplifying a transmitted signal. In order to satisfy the demand for multimedia services and high-speed communication functions for a spread wireless communication system, research is continuously being conducted for the continuous development of technology and the improvement of broadband characteristics and nonlinear characteristics.
In an amplifying device, linearity and bias level of a power amplifier such as a Heterojunction Bipolar Transistor (HBT) have a strong correlation. In general, a power transistor has excellent linearity performance when it is biased to a high level.
However, when the amplifying device operates at a high temperature, the on-voltage Vth of the PN junction between the base and the emitter (base-emitter) decreases due to the temperature characteristics of the HBT device. In this case, the base bias level also becomes low.
Therefore, since the base bias level becomes low during high temperature operation, there may be a problem that the linearity of the power amplifier is deteriorated. In order to overcome such a problem, one such solution has been proposed: a Proportional To Absolute Temperature (PTAT) bias is used for increasing the external bias current when the amplifier is operating at high temperatures. However, in this method, there may be technical difficulties such as accurately sensing the temperature of the HBT power transistor, and an external circuit is additionally required to implement this method, and thus the circuit included in the amplifying device may become more complicated.
Disclosure of Invention
This summary is provided to introduce a selection of concepts in a simplified form that are further described below in the detailed description. This summary is not intended to identify key features or essential features of the claimed subject matter, nor is it intended to be used as an aid in determining the scope of the claimed subject matter.
Provided are a bias circuit and an amplifying device, in which the bias circuit and the amplifying device can compensate a base bias current that can be changed according to an ambient temperature using a temperature characteristic of a diode and a current sink method for reflecting a change in the ambient temperature.
In one general aspect, a bias circuit includes: a current generation circuit that generates an intrinsic base current based on a reference current; a bias output circuit that generates a base bias current based on the internal base current and outputs the base bias current to an amplification circuit; and a temperature compensation circuit that adjusts the base bias current based on a temperature voltage reflecting a change in ambient temperature.
In another general aspect, an amplifying device includes: a current generation circuit that generates an intrinsic base current based on a reference current; a bias output circuit that generates a base bias current based on the intrinsic base current; an amplifying circuit including an amplifying transistor receiving the base bias current; and a temperature compensation circuit that adjusts the base bias current based on a temperature voltage reflecting a change in ambient temperature.
The current generation circuit may include: a first resistor having a first end connected to a terminal of the reference current; a first diode and a second diode connected in series with each other between a second end of the first resistor and a first end of a second resistor; and the second resistor is connected between the second diode and the ground.
The current generation circuit may output the temperature voltage at a connection node between the first diode and the second diode.
The second diode may have the same temperature characteristic as that of a base-emitter PN junction of the amplifying transistor included in the amplifying circuit.
The bias output circuit may include: an output transistor having a base connected to a connection node between the first resistor and the first diode, a collector connected to a terminal of a power supply voltage, and an emitter connected to the amplifying circuit.
The output transistor may amplify a current of the intrinsic base current input to the base and output the base bias current through the emitter.
The temperature compensation circuit may include: a third resistor having a first end connected to the connection node between the first diode and the second diode; a fourth resistor having a first end connected to the base of the output transistor; a compensation transistor having a base connected to the second end of the third resistor, a collector connected to the second end of the fourth resistor, and an emitter connected to ground; and a first capacitor connected between the base of the compensation transistor and ground. The fourth resistor may provide an isolation function between the collector of the compensation transistor and the base of the output transistor, and the third resistor and the first capacitor may form a low pass filter.
The compensation transistor may adjust a current sunk to ground of the intrinsic base current according to a magnitude of the temperature voltage.
In another general aspect, an amplifying apparatus includes: a first transistor for generating and outputting a base bias current based on the received intrinsic base current; a second transistor for receiving the base bias current; and a third transistor configured to adjust a base voltage of the second transistor based on an ambient temperature change.
The amplifying device may include: a first diode; and a second diode connected in series with the first diode. A temperature voltage corresponding to the ambient temperature change may be output to a base of the third transistor at a connection node between the first diode and the second diode.
The temperature characteristic of the second diode may be the same as the temperature characteristic of the second transistor.
The third transistor may adjust a magnitude of a current sunk to ground of the intrinsic base current based on a magnitude of the temperature voltage.
Other features and aspects will be apparent from the following detailed description, the accompanying drawings, and the claims.
Drawings
Fig. 1 is a diagram of an amplification apparatus according to an example.
Fig. 2 is a diagram of a bias circuit and an amplification circuit according to an example.
Fig. 3 is a diagram of a bias circuit and an amplification circuit according to an example.
Fig. 4 is a diagram of an application of an amplifying apparatus according to an example.
Fig. 5 is a graph showing temperature-quiescent current characteristics.
Fig. 6A and 6B are graphs showing output power-gain characteristics according to temperature changes.
Fig. 7A and 7B are graphs showing output power-AM distortion characteristics according to a temperature change.
Fig. 8A and 8B are graphs showing output power-ACLR characteristics according to temperature changes.
Like reference numerals refer to like elements throughout the drawings and detailed description. The figures may not be drawn to scale and the relative sizes, proportions and depictions of the elements in the figures may be exaggerated for clarity, illustration and convenience.
Detailed Description
The following detailed description is provided to assist the reader in obtaining a thorough understanding of the methods, devices, and/or systems described herein. Various changes, modifications, and equivalents of the methods, apparatus, and/or systems described herein will, however, be apparent to those of ordinary skill in the art. The order of operations described herein is merely an example and is not limited to the order set forth herein, but rather, variations may be made which will be apparent to those of ordinary skill in the art in addition to operations which must occur in a particular order. Also, descriptions of functions and constructions that will be well known to those of ordinary skill in the art may be omitted for the sake of clarity and conciseness.
The features described herein may be embodied in different forms and should not be construed as limited to the examples described herein. Rather, the examples described herein have been provided so that this disclosure will be thorough and complete, and will convey the full scope of the disclosure to those skilled in the art.
Here, it is noted that the use of the term "may" with respect to an example or embodiment (e.g., with respect to what an example or embodiment may include or implement) means that there is at least one example or embodiment that includes or implements such a feature, and all examples and embodiments are not limited thereto.
Throughout the specification, when an element such as a layer, region or substrate is described as being "on," "connected to" or "coupled to" another element, it may be directly on, "connected to" or "coupled to" the other element or one or more other elements may be present therebetween. In contrast, when an element is referred to as being "directly on," "directly connected to" or "directly coupled to" another element, there may be no intervening elements present.
As used herein, the term "and/or" includes any one of the associated listed items and any combination of any two or more.
Although terms such as "first", "second", and "third" may be used herein to describe various elements, components, regions, layers or sections, these elements, components, regions, layers or sections should not be limited by these terms. Rather, these terms are only used to distinguish one element, component, region, layer or section from another element, component, region, layer or section. Thus, a first element, component, region, layer or section referred to in the examples described herein could also be referred to as a second element, component, region, layer or section without departing from the teachings of the examples.
Spatially relative terms, such as "above," "upper," "lower," and "below," may be used herein for ease of description to describe one element's relationship to another element as illustrated in the figures. Such spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, elements described as "above" or "upper" relative to another element would then be "below" or "lower" relative to the other element. Thus, the term "above" includes both an orientation of "above" and "below" depending on the spatial orientation of the device. The device may also be otherwise oriented (e.g., rotated 90 degrees or at other orientations) and the spatially relative terms used herein should be interpreted accordingly.
The terminology used herein is for the purpose of describing various examples only and is not intended to be limiting of the disclosure. The singular is intended to include the plural unless the context clearly indicates otherwise. The terms "comprises," "comprising," and "having" specify the presence of stated features, quantities, operations, elements, components, and/or combinations thereof, but do not preclude the presence or addition of one or more other features, quantities, operations, components, elements, and/or combinations thereof.
Due to manufacturing techniques and/or tolerances, the shapes shown in the drawings may vary. Accordingly, the examples described herein are not limited to the particular shapes shown in the drawings, but include changes in shapes that occur during manufacturing.
The features of the examples described herein may be combined in various ways that will be apparent after understanding the disclosure of the present application. Further, while the examples described herein have a variety of configurations, other configurations are possible that will be apparent after understanding the disclosure of this application.
Fig. 1 is a diagram of an amplification apparatus according to an example.
Referring to fig. 1, the amplifying device may include a
The
The
Fig. 2 is a diagram of a bias circuit and an amplification circuit according to an example.
Referring to fig. 1 and 2, the
The current generation circuit 211 may generate the intrinsic base current I10 based on the reference current Iref. As an example, the current generation circuit 211 may include a first resistor R11, a first diode D11, and a second diode D12.
The first resistor R11 may include one end connected to a terminal of the reference current Iref and the other end connected to an anode of the first diode D11.
The first diode D11 and the second diode D12 may be connected in series with each other between the other end of the first resistor R11 and ground. The first diode D11 may include an anode connected to the other end of the first resistor R11 and receiving the current I20 and a cathode connected to the anode of the second diode D12. The second diode D12 may include an anode connected to the cathode of the first diode D11 and a cathode connected to ground.
For each drawing, unnecessary redundant explanation may be omitted for components having the same reference numerals and the same functions, and differences of each drawing will be explained.
Fig. 3 is a diagram of a bias circuit and an amplification circuit according to an example.
Referring to fig. 3, the current generation circuit 211 may include a first resistor R11, a first diode D11, a second diode D12, and a second resistor R12.
The first resistor R11 may include one end connected to a terminal of the reference current Iref and the other end connected to an anode of the first diode D11. The first diode D11 and the second diode D12 may be connected in series with each other between the other end of the first resistor R11 and one end of the second resistor R12. The first diode D11 may include an anode connected to the other end of the first resistor R11 and a cathode connected to the anode of the second diode D12. The second diode D12 may include an anode connected to the cathode of the first diode D11 and a cathode connected to one end of the second resistor R12. The second resistor R12 may include one end connected to the cathode of the second diode D12 and the other end connected to ground.
In each of fig. 2 and 3, the current generation circuit 211 may output the temperature voltage VT to the
For example, when the temperature characteristic of the amplifying transistor M50 is the same as that of the second diode D12, the threshold voltage Vth in the second diode D12 also changes by the amount of change in the threshold voltage Vth in the amplifying transistor M50 according to the temperature change.
Therefore, when a change in the threshold voltage occurs in the amplifying transistor M50 according to a temperature change, a change in the threshold voltage Vth also occurs in the second diode D12. Therefore, in order to amplify the temperature compensation of the transistor M50, the temperature voltage VT reflecting the temperature change may be output from the connection node NA between the first diode D11 and the second diode D12.
The bias output circuit 212 may amplify a current I12 of the internal base current I10 input to the bias output circuit 212 to generate a base bias current Ibb, and output the base bias current Ibb to the
The bias output circuit 212 may include an output transistor M20. The output transistor M20 may include a base NC connected to a first connection node N1 between the first resistor R11 and the first diode D11, a collector connected to a terminal of the power supply voltage VBAT, and an emitter connected to the amplifying
The output transistor M20 may amplify the current I12 of the internal base current I10 input to the base NC to output the base bias current Ibb to the amplifying
For example, referring to fig. 2, the
The third resistor R31 may include one end connected to a connection node NA between the first diode D11 and the second diode D12 and the other end connected to the base NB of the compensation transistor M30.
The fourth resistor R32 may include one end connected to the base of the output transistor M20 through the connection node N2 and the other end connected to the collector of the compensation transistor M30.
The compensation transistor M30 may include a base connected to the other end of the third resistor R31, a collector connected to the other end of the fourth resistor R32, and an emitter connected to ground.
The first capacitor C31 may be connected between the base of the compensation transistor M30 and ground.
The compensation transistor M30 may adjust the magnitude of the current I11 of the intrinsic base current I10 sunk to ground according to the magnitude of the temperature voltage VT. Accordingly, the current I12 supplied to the base of the output transistor M20 may be adjusted. As a result, the base bias current Ibb supplied by the output transistor M20 may be regulated according to the current I12 input to the base of the output transistor M20.
For example, changes in ambient temperature are reflected in the temperature voltage VT, and the magnitude of the current I11 drawn to ground is adjusted based on the temperature voltage VT. Thus, the base bias current Ibb supplied by the output transistor M20 may be adaptively adjusted with respect to temperature changes. Therefore, the base bias current Ibb that varies according to the temperature change can be adaptively compensated, with the result that the amount of change in the base bias current Ibb according to the temperature change is reduced.
The third resistor R31 and the first capacitor C31 may form a low pass filter. Due to the low pass filter, the compensation transistor M30 may reflect the effect of the DC bias point moving adaptively according to temperature changes.
The fourth resistor R32 provides a resistance value between the base of the output transistor M20 and the collector of the compensation transistor M30, thereby performing a function of enhancing isolation between the RF signal at the base of the output transistor M20 and the RF signal at the collector of the compensation transistor M30.
The
As an example, the amplifying transistor M50 receives the base bias current Ibb to the base ND through the base resistor RB, receives the signal input through the input terminal IN to the base ND through the first DC blocking capacitor CB1, amplifies the signal that has been input, and outputs the amplified signal to the output terminal OUT through the second DC blocking capacitor CB2 connected to the collector of the amplifying transistor M50.
In general, as the base bias point (base bias voltage) of the amplifying transistor M50 increases at low temperature, the current flowing through the amplifying transistor M50 and the power gain increase. In this case, due to the operation of the
In other words, when the amplifying transistor M50 operates at a low temperature, the temperature voltage VT is higher compared to a room-temperature operating condition. Therefore, the voltage of the base of the compensation transistor M30 increases. In this case, the base current I12 of the output transistor M20 is relatively small when the current I11 sunk to ground is increased by the compensation transistor M30. Therefore, the base voltage Vbe of the amplifying transistor M50 decreases. As a result, the compensation transistor M30 is used to lower the base voltage Vbe of the amplification transistor M50, thereby having a temperature compensation effect.
In contrast, as the base bias point (base bias voltage) of the amplifying transistor M50 is reduced at high temperature, the current flowing through the amplifying transistor M50 and the power gain are reduced. In this case, due to the operation of the
In other words, when the amplifying transistor M50 operates at a high temperature, the temperature voltage VT is reduced compared to a room-temperature operating condition. Therefore, the base voltage of the compensation transistor M30 decreases. When the base voltage of the compensation transistor M30 is reduced while the current I11 sunk to ground is reduced through the compensation transistor M30, the base current I12 of the output transistor M20 is relatively high. Therefore, the base voltage Vbe of the amplifying transistor M50 increases. As a result, the compensation transistor M30 is used to increase the base voltage Vbe of the amplification transistor M50, thereby having a temperature compensation effect also at high temperatures.
On the other hand, in the current generation circuit 211, each of the first diode D11 and the second diode D12 may be formed as a P-N diode by diode connection of the base and collector of the HBT. The first resistor R11 and the second resistor R12 are bias resistors for forming an appropriate bias point at room temperature.
Fig. 4 is a diagram of an application of an amplifying apparatus according to an example.
Referring to fig. 4, the amplifying apparatus according to the example may be applied to a three-stage power amplifying circuit having three amplifying circuits such as a
The
In fig. 4, an example in which the
Fig. 5 is a graph showing temperature-quiescent current characteristics.
Fig. 5 is a graph showing temperature-quiescent current characteristics according to simulation results of temperature-based quiescent current when a bias circuit according to an example is applied to the
G11 shown in fig. 5 is a graph of temperature-quiescent current characteristics of a bias circuit according to the related art, and G12 is a graph of temperature-quiescent current characteristics of a bias circuit according to an example.
G11 and G12 of fig. 5 are simulation results at 3 points of-30 degrees (low temperature), 25 degrees (room temperature), and 80 degrees (high temperature). Here, referring to G11 and G12, when the bias circuit according to the related art is applied, the deviation of the quiescent current according to the temperature change is at a level of 32mA (62mA to 94 mA). However, when the bias circuit including the temperature compensation circuit according to the example is applied, the deviation of the quiescent current according to the temperature change is reduced to 10mA (74mA to 84mA), which is reduced to about one-third of the previous level. Therefore, the deviation of the bias point according to the temperature change is reduced.
Fig. 6A is a graph of an output power-gain characteristic according to a temperature change of a bias circuit according to the related art, and fig. 6B is a graph of an output power-gain characteristic according to a temperature change of a bias circuit according to an example.
Each of G21, G22, and G23 of fig. 6A is a graph of output power-gain characteristics according to temperature change of a bias circuit according to the related art at 3 points of-30 degrees (low temperature), 25 degrees (room temperature), and 80 degrees (high temperature), respectively. Each of G31, G32, and G33 of fig. 6B is a graph of output power-gain characteristics according to temperature changes of the bias circuit according to the example at 3 points of-30 degrees (low temperature), 25 degrees (room temperature), and 80 degrees (high temperature), respectively.
Referring to G21, G22, and G23 of fig. 6A, when the bias circuit according to the related art is applied, the deviation of the power gain according to the temperature change is up to a level of 2.2 dB. However, referring to G31, G32, and G33 of fig. 6B, when the bias circuit having the temperature compensation circuit according to the example is applied, the deviation is reduced to about 1.5 dB.
Fig. 7A and 7B are graphs showing output power-AM distortion characteristics according to a temperature change.
Fig. 7A is a graph of output power-AM distortion characteristics according to temperature change of a bias circuit according to the related art, and fig. 7B is a graph of output power-AM distortion characteristics according to temperature change of a bias circuit according to an example.
Each of G41, G42, and G43 of fig. 7A is a graph of output power-AM distortion characteristics according to a temperature change of a bias circuit according to the related art at 3 points of-30 degrees (low temperature), 25 degrees (room temperature), and 80 degrees (high temperature), respectively. Each of G51, G52, and G53 of fig. 7B is a graph of output power-AM distortion characteristics according to temperature change of the bias circuit according to the example at 3 points of-30 degrees (low temperature), 25 degrees (room temperature), and 80 degrees (high temperature), respectively.
Referring to G41, G42, and G43 of fig. 7A, when the bias circuit according to the related art is applied, the deviation of the output power-AM distortion according to the temperature change is at a level of 0.7 dB. Referring to G51, G52, and G53 of fig. 7B, when the bias circuit according to the example is applied, the deviation of the output power-AM distortion according to the temperature change is reduced to about 0.3 dB.
Fig. 8A and 8B are graphs showing output power-ACLR characteristics according to temperature changes.
Fig. 8A is a graph of an output power-Adjacent Channel Leakage Ratio (ACLR) characteristic according to a temperature change of a bias circuit according to the related art, and fig. 8B is a graph of an output power-ACLR characteristic according to a temperature change of an exemplary bias circuit.
Each of G61, G62, and G63 of fig. 8A is a graph of output power-ACLR characteristics according to temperature change of the bias circuit according to the related art at 3 points of-30 degrees (low temperature), 25 degrees (room temperature), and 80 degrees (high temperature), respectively. Each of G71, G72, and G73 of fig. 8B is a graph of output power-ACLR characteristics according to temperature change of the bias circuit according to the example at 3 points of-30 degrees (low temperature), 25 degrees (room temperature), and 80 degrees (high temperature), respectively.
Referring to G61, G62, and G63 of fig. 8A, when the bias circuit according to the related art is applied, the deviation of the output power-ACLR performance according to the temperature change is about 5.5 dB. Referring to G71, G72, and G73 of fig. 8B, when the bias circuit according to the example is applied, the deviation of the output power-ACLR performance according to the temperature change may be about 2.5 dB. Here, it is confirmed that the degree of deterioration of linearity can be reduced.
The control circuit of the amplification apparatus according to the example may be implemented as a computing environment in which a processor (e.g., a Central Processing Unit (CPU), a Graphic Processing Unit (GPU), a microprocessor, an Application Specific Integrated Circuit (ASIC), a Field Programmable Gate Array (FPGA), etc.), a memory (e.g., a volatile memory (e.g., RAM, etc.), a non-volatile memory (e.g., ROM, flash memory, etc.), an input device (e.g., a keyboard, a mouse, a pen, a voice input device, a touch input device, an infrared camera, a video input device, etc.), an output device (e.g., a display, a speaker, a printer, etc.), and a communication access device (e.g., a modem, a Network Interface Card (NIC), an integrated network interface, a radio frequency transmitter/receiver, an infrared port, a USB connection device, etc.) are interconnected with each other (e, peripheral Component Interconnect (PCI), USB, firmware (IEEE 1394), optical bus fabric, network, etc.).
The computing environment may be implemented as a distributed computing environment, including, but not limited to, a personal computer, a server computer, a hand-held or laptop device, a mobile device (mobile telephone, PDA, media player, etc.), a multiprocessor system, a consumer electronics product, a minicomputer, a mainframe computer, or any of the above systems or devices.
According to the example discussed herein, in the current bias circuit, the temperature characteristic of the diode and the current sink method for reflecting the change of the ambient temperature are used to compensate the base bias current that can vary according to the ambient temperature and improve performance deviation such as gain deviation according to the change of the temperature, deviation of AM-AM distortion, deviation of linearity, and the like.
While the present disclosure includes specific examples, it will be apparent to those of ordinary skill in the art that various changes in form and details may be made therein without departing from the spirit and scope of the claims and their equivalents. The examples described herein are to be considered in a descriptive sense only and not for purposes of limitation. The description of features or aspects in each example will be considered applicable to similar features or aspects in other examples. Suitable results may be achieved if the described techniques are performed in a different order and/or if components in the described systems, architectures, devices, or circuits are combined in a different manner and/or replaced or supplemented by other components or their equivalents. Therefore, the scope of the present disclosure is defined not by the detailed description but by the claims and their equivalents, and all modifications within the scope of the claims and their equivalents are to be construed as being included in the present disclosure.
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