阅读说明：本技术 探测材料热膨胀系数的传感装置及系统 (Sensing device and system for detecting thermal expansion coefficient of material ) 是由 不公告发明人 于 2020-07-06 设计创作，主要内容包括：本发明涉及探测材料热膨胀系数的传感装置及系统,主要涉及热膨胀测量领域。本申请提供的传感装置当需要测量该第一热膨胀材料层的热膨胀系数时,该传感装置在外界磁场的作用下,该第一磁性材料层产生热量,并将热量传递到该第一热膨胀材料层上,该第一热膨胀材料层在热量的作用下产生形变,该第一金属膜随着该第一热膨胀材料层的形变位置发生改变,使得该第一金属膜产生该局域电场改变对手性光的吸收情况,继而使得该传感装置出射光的光谱发生改变,通过检测出射光的圆二色光谱的峰值的移动情况,得到该第一金属膜对手性光的吸收情况,根据该第一金属膜对手性光的吸收情况得到该热膨胀材料的形变情况,进而得到该热膨胀材料的膨胀系数。(The invention relates to a sensing device and a sensing system for detecting the thermal expansion coefficient of a material, and mainly relates to the field of thermal expansion measurement. The present application provides a sensing device when it is desired to measure the coefficient of thermal expansion of the first layer of thermally expansive material, under the action of external magnetic field, the first magnetic material layer generates heat and transfers the heat to the first thermal expansion material layer, the first thermal expansion material layer deforms under the action of heat, the first metal film changes along with the deformation position of the first thermal expansion material layer, so that the first metal film generates the local electric field to change the absorption of chiral light, and further the spectrum of the light emitted from the sensing device is changed, by detecting the shift of the peak value of the circular dichroism spectrum of the emergent light, the absorption of the first metal film to the hand light is obtained, and obtaining the deformation condition of the thermal expansion material according to the absorption condition of the first metal film on the hand light, and further obtaining the expansion coefficient of the thermal expansion material.)

1. A sensing device for detecting the coefficient of thermal expansion of a material, said sensing device comprising: the device comprises a substrate layer, a metal layer, a first measuring end and a second measuring end; the metal layer is arranged on one side of the substrate layer, the first measuring end and the second measuring end are arranged on one side of the metal layer away from the substrate layer in a relatively parallel mode, the first measuring end comprises a first magnetic material layer, a first thermal expansion material layer and a first metal film, the first magnetic material layer is arranged on one side of the metal layer away from the substrate layer, the first thermal expansion material layer is arranged on one side of the first magnetic material layer away from the substrate layer, the first metal film is arranged on one side of the first thermal expansion material layer away from the substrate layer, the first magnetic material layer is arranged on one side of the metal layer away from the substrate layer, the second measuring end comprises a second magnetic material layer and a second metal film, and the second magnetic material layer is arranged on one side of the metal layer away from the substrate layer, the second metal film is arranged on one side, far away from the base layer, of the second magnetic material layer.

2. The sensing device for detecting the thermal expansion coefficient of a material according to claim 1, further comprising a second thermal expansion material layer disposed between the second magnetic material layer and the second metal film, wherein the second thermal expansion material layer is different from the thermal expansion material of the first thermal expansion material layer.

3. The sensing device for detecting the coefficient of thermal expansion of a material as claimed in claim 1, further comprising a second layer of thermally expansive material disposed on a side of the metal layer remote from the base layer and between the first measuring end and the second measuring end.

4. The sensing device for detecting the thermal expansion coefficient of a material as claimed in claim 1, wherein the material of the first metal film and the second metal film is a noble metal material.

5. The sensing device of claim 1, wherein the first metal film and the second metal film are each 600 x 600 nm array structures.

6. The sensing device for detecting the thermal expansion coefficient of a material according to claim 1, wherein the first metal film and the second metal film have a length of 300 nm, a width of 100 nm and a height of 40 nm.

7. The sensing device for detecting the thermal expansion coefficient of a material as claimed in claim 1, wherein the material of the metal layer is a noble metal material.

8. A sensing system for detecting the coefficient of thermal expansion of a material, the system comprising: the sensor device comprises a magnetic field generating device, a light source, a spectrometer and the sensor device as claimed in any one of claims 1 to 7, wherein the light source is used for irradiating a first metal film and a second metal film of the sensor device, the magnetic field generating device is arranged around the sensor device and used for providing a variable magnetic field for the sensor device, and the spectrometer is used for detecting the spectrum of emergent light of the sensor device.

9. The sensing system for detecting the coefficient of thermal expansion of a material as claimed in claim 8, wherein said light source is a chiral light source.

Technical Field

The invention relates to the field of thermal expansion measurement, in particular to a sensing device and a sensing system for detecting a thermal expansion coefficient of a material.

Background

The coefficient of thermal expansion of a material is a very important physical property of the material. Almost any industrial design must take into account the temperature characteristics of the material, and the coefficient of expansion is an important aspect of the temperature characteristics (among others, temperature coefficient of resistance, strength, hardness, stiffness versus temperature characteristics, and temperature characteristics of some semiconductors), and thermal expansion materials are used in many industries.

Disclosure of Invention

The present invention aims to provide a sensing device and a system for detecting a thermal expansion coefficient of a material, so as to solve the problem that the measurement of the thermal expansion coefficient is not accurate because human errors are easily introduced in the measurement process because the original length or the original volume of the material to be measured and the relative elongation and the volume variation of the material to be measured need to be measured in the prior art.

In order to achieve the above purpose, the embodiment of the present invention adopts the following technical solutions:

in a first aspect, the present application provides a sensing device for detecting the coefficient of thermal expansion of a material, the sensing device comprising: the device comprises a substrate layer, a metal layer, a first measuring end and a second measuring end; the metal layer sets up the one side at the stratum basale, the relative parallel setting of first measuring end and second measuring end is in the one side that the stratum basale was kept away from to the metal layer, and first measuring end includes first magnetic material layer, first thermal expansion material layer and first metal film, first magnetic material layer sets up the one side of keeping away from the stratum basale at the metal layer, first thermal expansion material layer sets up the one side of keeping away from the basement at first magnetic material layer, first metal film sets up the one side of keeping away from the basement at first thermal expansion material layer, first magnetic material layer sets up the one side of keeping away from the stratum basale at the metal layer, the second measuring end includes second magnetic material layer and second metal film, the one side of keeping away from the stratum basale at the metal layer is set up to the second magnetic material layer, the one side of.

Optionally, the sensing device further comprises a second thermal expansion material layer, the second thermal expansion material layer is disposed between the second magnetic material layer and the second metal film, and the second thermal expansion material layer is different from the thermal expansion material of the first thermal expansion material layer.

Optionally, the sensing device further comprises a second thermal expansion material layer disposed on a side of the metal layer away from the base layer and between the first measuring end and the second measuring end.

Optionally, the material of the first metal film and the second metal film are both noble metal materials.

Optionally, the first metal film and the second metal film are both 600 × 600 nano-array structures.

Optionally, the first metal film and the second metal film have a length of 300 nm, a width of 100 nm, and a height of 40 nm.

Optionally, the material of the metal layer is a noble metal material.

In a second aspect, the present application provides a sensing system for detecting the coefficient of thermal expansion of a material, the system comprising: the sensing device comprises a magnetic field generating device, a light source, a spectrometer and the sensing device of any one of the first aspect, wherein the light source is used for irradiating a first metal film and a second metal film of the sensing device, the magnetic field generating device is arranged around the sensing device and used for providing a variable magnetic field for the sensing device, and the spectrometer is used for detecting the spectrum of emergent light of the sensing device.

Optionally, the light source is a chiral light source.

The invention has the beneficial effects that:

the application provides a sensing device includes: the device comprises a substrate layer, a metal layer, a first measuring end and a second measuring end; the metal layer is arranged on one side of the substrate layer, the first measuring end and the second measuring end are arranged on one side of the metal layer away from the substrate layer in a relatively parallel mode, the first measuring end comprises a first magnetic material layer, a first thermal expansion material layer and a first metal film, the first magnetic material layer is arranged on one side of the metal layer away from the substrate layer, the first thermal expansion material layer is arranged on one side of the first magnetic material layer away from the substrate layer, the first metal film is arranged on one side of the first thermal expansion material layer away from the substrate layer, the first magnetic material layer is arranged on one side of the metal layer away from the substrate layer, the second measuring end comprises a second magnetic material layer and a second metal film, the second magnetic material layer is arranged on one side of the metal layer away from the substrate layer, the second metal film is arranged on one side of the second magnetic material layer away from the substrate layer, and, the sensing device is characterized in that the first magnetic material layer generates heat under the action of an external magnetic field, the heat is transferred to the first thermal expansion material layer, the first thermal expansion material layer deforms under the action of the heat, the first metal film changes along with the deformation position of the first thermal expansion material layer, the first metal film generates a local electric field to change the absorption condition of chiral light, the spectrum of emergent light of the sensing device changes, the absorption condition of the first metal film on the chiral light is obtained by detecting the moving condition of the peak value of the circular dichroism spectrum of the emergent light, the deformation condition of the thermal expansion material is obtained according to the absorption condition of the first metal film on the chiral light, and the expansion coefficient of the thermal expansion material is further obtained.

Drawings

In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings needed to be used in the embodiments will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present invention and therefore should not be considered as limiting the scope, and for those skilled in the art, other related drawings can be obtained according to the drawings without inventive efforts.

FIG. 1 is a schematic structural diagram of a sensing device for detecting a coefficient of thermal expansion of a material according to an embodiment of the present invention;

FIG. 2 is a schematic structural diagram of another sensing device for detecting the coefficient of thermal expansion of a material according to an embodiment of the present invention;

FIG. 3 is a schematic structural diagram of another sensing device for detecting the coefficient of thermal expansion of a material according to an embodiment of the present invention;

fig. 4 is an absorption spectrum diagram of the same expansion material as the first thermal expansion material layer and the second thermal expansion material layer;

fig. 5 is an absorption spectrum diagram of different kinds of expansion materials of the first thermal expansion material layer and the second thermal expansion material layer.

Reference numbers: 10-a base layer; 20-a metal layer; 30-a first measuring end; 31 — a first magnetic material layer; 32-a first layer of thermally expansive material; 33-a first metal film; 40-a second measuring end; 41-a second magnetic material layer; 42-a second metal film; 43-second layer of thermally expansive material.

Detailed Description

In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiment is a metal plate embodiment of the present invention, and not all embodiments. The components of embodiments of the present invention generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations.

Thus, the following detailed description of the embodiments of the present invention, presented in the figures, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.

It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, it need not be further defined and explained in subsequent figures.

In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings or the orientations or positional relationships that the products of the present invention are conventionally placed in use, and are only used for convenience in describing the present invention and simplifying the description, but do not indicate or imply that the devices or elements referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first," "second," "third," and the like are used solely to distinguish one from another and are not to be construed as indicating or implying relative importance.

Furthermore, the terms "horizontal", "vertical" and the like do not imply that the components are required to be absolutely horizontal or pendant, but rather may be slightly inclined. For example, "horizontal" merely means that the direction is more horizontal than "vertical" and does not mean that the structure must be perfectly horizontal, but may be slightly inclined.

In the description of the present invention, it should also be noted that, unless otherwise explicitly specified or limited, the terms "disposed," "mounted," "connected," and "connected" are to be construed broadly and may, for example, be fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.

In order to make the implementation of the present invention clearer, the following detailed description is made with reference to the accompanying drawings.

FIG. 1 is a schematic structural diagram of a sensing device for detecting a coefficient of thermal expansion of a material according to an embodiment of the present invention; as shown in fig. 1, the present application provides a sensing device for detecting a coefficient of thermal expansion of a material, the sensing device comprising: a base layer 10, a metal layer 20, a first measuring end 30 and a second measuring end 40; the metal layer 20 is disposed on one side of the substrate layer 10, the first measuring end 30 and the second measuring end 40 are disposed in a relatively parallel manner on one side of the metal layer 20 away from the substrate layer 10, and the first measurement end 30 includes a first magnetic material layer 31, a first thermal expansion material layer 32 and a first metal film 33, the first magnetic material layer 31 is disposed on a side of the metal layer 20 away from the substrate layer 10, the first thermal expansion material layer 32 is disposed on a side of the first magnetic material layer 31 away from the substrate, the first metal film 33 is disposed on a side of the first thermal expansion material layer 32 away from the substrate, the first magnetic material layer 31 is disposed on a side of the metal layer 20 away from the substrate layer 10, the second measurement end 40 includes a second magnetic material layer 41 and a second metal film 42, the second magnetic material layer 41 is disposed on a side of the metal layer 20 away from the substrate layer 10, and the second metal film 42 is disposed on a side of the second magnetic material layer 41 away from the substrate layer 10.

The first measuring terminal 30 and the second measuring terminal 40 are both disposed above the metal layer 20, the substrate layer 10 is disposed below the metal layer 20, the first measuring terminal 30 and the second measuring terminal 40 are both rectangular prisms, the first measuring terminal 30 and the second measuring terminal 40 are disposed in parallel, the projection positions of the first measuring terminal 30 and the second measuring terminal 40 on the vertical surface of the substrate layer 10 are different, the first measuring terminal 30 includes a first magnetic material layer 31, a first thermal expansion material layer 32 and a first metal film 33, the first magnetic material layer 31 is fixedly disposed above the metal layer 20, the first thermal expansion material is disposed above the first magnetic material layer 31, the first metal film 33 is disposed above the first magnetic material layer 31, and generally, the first magnetic material layer 31, the first thermal expansion material layer 32 and the first metal film 33 are not fixedly connected, that is, the first thermal expansion material layer 32 and the first metal film 33 can be removed and replaced, after one measurement of the thermal expansion coefficient is finished, the first thermal expansion material can be replaced by another thermal expansion material, the thermal expansion coefficient is measured continuously, the second measuring end 40 includes the second magnetic material layer 41 and the second metal film 42, the second magnetic material layer 41 and the second metal film 42 are also not fixedly connected, that is, the second metal film 42 can be removed, the materials and the geometric parameters of the first magnetic material layer 31 and the second magnetic material layer 41 are consistent, the materials and the geometric parameters of the first metal film 33 and the second metal film 42 are consistent, when the thermal expansion coefficient of the first thermal expansion material layer 32 needs to be measured, the sensing device generates heat under the action of an external magnetic field and transmits the heat to the first thermal expansion material layer 32, the first thermal expansion material layer 32 is deformed under the action of heat, the first metal film 33 is changed along with the deformation position of the first thermal expansion material layer 32, so that the first metal film 33 generates the local electric field to change the absorption condition of chiral light, the spectrum of the emergent light of the sensing device is changed, the absorption condition of the first metal film 33 to the chiral light is obtained by detecting the movement condition of the peak value of the circular dichroism spectrum of the emergent light, the deformation condition of the thermal expansion material is obtained according to the absorption condition of the chiral light by the first metal film 33, and further the expansion coefficient of the thermal expansion material is obtained, because the first measuring end 30 is provided with the first thermal expansion material layer 32, the second measuring end 40 is not provided with the thermal expansion material layer, and all materials of the first measuring end 30 and the second measuring end 40 except the first thermal expansion material layer 32 are also heated and expanded, in order to distinguish whether the other structure is thermally expanded or the first thermal expansion material layer 32 is thermally expanded, the first measuring end 30 and the second measuring end 40 are used for comparison, and the influence of the individual thermal expansion of the first thermal expansion material layer 32 on the spectrum can be obtained by subtracting the detection spectrum of the first measuring end 30 and the detection spectrum of the second measuring end 40.

Fig. 2 is an absorption spectrum diagram of the same expansion material as the first thermal expansion material layer and the second thermal expansion material layer; fig. 3 is an absorption spectrum diagram of different kinds of expansion materials of the first thermal expansion material layer and the second thermal expansion material layer, as shown in fig. 2 and fig. 3, and in addition, a magnetic field is applied to the periphery of the sensing device for the first time, a magnetic field is not applied to the periphery of the sensing device for the second time, the spectra in the first time of applying the magnetic field are subtracted, and the expansion characteristics of the thermal expansion materials are reacted by changing the magnitude of the applied magnetic field, through the shift of the spectral line, and the change of the spectral peak value, wherein fig. 2 is a case that the first thermal expansion material layer 32 and the second thermal expansion material layer 43 are the same kind of expansion material, fig. 3 is a case that the first thermal expansion material layer 32 and the second thermal expansion material layer 43 are different kinds of expansion materials, because the different expansion amounts of the different kinds of expansion materials generate a height difference in the structure, the absorption spectrum shows that a new resonance mode appears, by detecting, and an expansion coefficient of the intensity detection material, wherein in fig. 2, an abscissa represents a wavelength, an ordinate represents a normalized absorption power, when the wavelength is 730nm, a valley occurs in absorption at 730nm under the irradiation of the left-handed circularly polarized light, and an absorption peak occurs at 730nm under the irradiation of the right-handed circularly polarized light, and a large circular dichroism signal (CD) occurs at 730nm due to the absorption difference between the left-handed circularly polarized light and the right-handed circularly polarized light, and the CD signal is large, so that the detection is convenient, and the detection sensitivity is correspondingly increased. In fig. 3, resonance modes appear at wavelengths of 710nm and 745nm, and when the thermal expansion material under the metal film is changed, the first metal film and the second metal film have a height difference due to the difference in thermal expansion coefficient of different materials, as compared with the second graph, and the reaction in the spectrogram shows a new mode. The expansion coefficient of the altered material is detected by detecting the position of the resonance peak of the new resonance mode, as well as the intensity.

Fig. 4 is a schematic structural diagram of another sensing device for detecting a thermal expansion coefficient of a material according to an embodiment of the present invention, as shown in fig. 4, optionally, the sensing device further includes a second thermal expansion material layer 43, the second thermal expansion material layer 43 is disposed between the second magnetic material layer 41 and the second metal film 42, and the second thermal expansion material layer 43 is different from the thermal expansion material of the first thermal expansion material layer 32.

The second thermal expansion material layer 43 is disposed between the second magnetic material layer 41 and the second metal film 42, and the second thermal expansion material layer is different from the thermal expansion material of the first thermal expansion material layer 32, at this time, it is not necessary to specifically calculate the thermal expansion coefficient, and it can be directly judged that the thermal expansion coefficient of the material is high, that is, the thermal expansion coefficient is large, by the spectral difference between the first thermal expansion material layer 32 and the second thermal expansion material layer 43, so that the two thermal expansion materials can be simply distinguished, and the thermal expansion coefficients of the two thermal expansion materials can be simply determined.

Fig. 5 is a schematic structural diagram of another sensing device for detecting the thermal expansion coefficient of a material according to an embodiment of the present invention, as shown in fig. 5, the sensing device further includes a second thermal expansion material layer 43, and the second thermal expansion material layer 43 is disposed on a side of the metal layer 20 away from the substrate layer 10 and between the first measuring end 30 and the second measuring end 40.

The second thermal expansion material layer 43 is disposed on the metal layer 20 between the first measuring terminal 30 and the second measuring terminal 40, the coupling condition between the first metal film 33 and the second metal film 42 is adjusted by the distance between the second thermal expansion material layer 43 and the first metal film 33 and the second metal film 42, and the thermal expansion coefficient of the second thermal expansion material is obtained by the coupling condition between the first metal film 33 and the second metal film 42 and the second thermal expansion material layer 43.

Alternatively, the materials of the first metal film 33 and the second metal film 42 are both noble metal materials.

The materials of the first metal film 33 and the second metal film 42 are all noble metal materials, which may be a single noble metal in the noble metal materials, or a mixed noble metal material formed by mixing a plurality of noble metals, and are not specifically limited herein, and if the first metal film 33 and the second metal film 42 are mixed noble metal materials, the mixing ratio of the noble metals of the mixed noble metal material is set according to actual needs, and is not specifically limited herein.

Optionally, the first metal film 33 and the second metal film 42 are both 600 × 600 nm array structures.

Alternatively, the first metal film 33 and the second metal film 42 have a length of 300 nm, a width of 100 nm, and a height of 40 nm.

Optionally, the material of the metal layer 20 is a noble metal material.

The material of the metal layer 20 may be a single noble metal in a noble metal material, or may be a mixed noble metal material formed by mixing a plurality of noble metals, and is not specifically limited herein, and if the metal layer 20 is a mixed noble metal material, the mixing ratio of the noble metals in the mixed noble metal material is set according to the actual requirement, and is not specifically limited herein.

The application provides a sensing device includes: a base layer 10, a metal layer 20, a first measuring end 30 and a second measuring end 40; the metal layer 20 is disposed on one side of the substrate layer 10, the first measurement terminal 30 and the second measurement terminal 40 are disposed in parallel on one side of the metal layer 20 away from the substrate layer 10, the first measurement terminal 30 includes a first magnetic material layer 31, a first thermal expansion material layer 32 and a first metal film 33, the first magnetic material layer 31 is disposed on one side of the metal layer 20 away from the substrate layer 10, the first thermal expansion material layer 32 is disposed on one side of the first magnetic material layer 31 away from the substrate, the first metal film 33 is disposed on one side of the first thermal expansion material layer 32 away from the substrate, the first magnetic material layer 31 is disposed on one side of the metal layer 20 away from the substrate layer 10, the second measurement terminal 40 includes a second magnetic material layer 41 and a second metal film 42, the second magnetic material layer 41 is disposed on one side of the metal layer 20 away from the substrate layer 10, the second metal film 42 is disposed on one side of the second magnetic material layer 41 away, when it is desired to measure the coefficient of thermal expansion of the first layer 32 of thermal expansion material, the sensing device is under the influence of an external magnetic field, the first magnetic material layer 31 generates heat, and transfers the heat to the first thermal expansion material layer 32, the first thermal expansion material layer 32 is deformed by heat, the first metal film 33 is changed in position according to the deformation of the first thermal expansion material layer 32, the first metal film 33 generates the local electric field to change the absorption of the chiral light, and then the spectrum of the light emitted from the sensing device is changed, by detecting the shift of the peak of the circular dichroism spectrum of the emitted light, the absorption of the chiral light by the first metal film 33 is obtained, the deformation of the thermal expansion material is obtained according to the absorption of the chiral light by the first metal film 33, and the expansion coefficient of the thermal expansion material is obtained.

The present application provides a sensing system for detecting the coefficient of thermal expansion of a material, the system comprising: the sensor comprises a magnetic field generating device, a light source, a spectrometer and the sensing device of any one of the above items, wherein the light source is used for irradiating a first metal film 33 and a second metal film 42 of the sensing device, the magnetic field generating device is arranged around the sensing device and used for providing a variable magnetic field for the sensing device, and the spectrometer is used for detecting the spectrum of emergent light of the sensing device.

Optionally, the light source is a chiral light source.

The above is only a preferred embodiment of the present invention, and is not intended to limit the present invention, and various modifications and changes will occur to those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.