阅读说明：本技术 压印模具制造方法 (Method for manufacturing imprint mold ) 是由 黄胜铭 林圣凱 陈志强 张晖谷 鍾佳欣 王潍淇 王铭瑞 吕仁贵 罗再昇 沈煌凱 于 2017-12-12 设计创作，主要内容包括：本发明提供一种压印模具制造方法。压印模具制造方法,包含：设置模具图案层于基材上；于模具图案层上设置第一硬掩膜层,第一硬掩膜层具有一个或多个第一镂空区域；在模具图案层形成第一模具图案,第一模具图案的范围与第一镂空区域于模具图案层的垂直投影范围完全重迭；去除第一硬掩膜层；于模具图案层上设置第二硬掩膜层,第二硬掩膜层具有一个或多个第二镂空区域,第二镂空区域于模具图案层的垂直投影范围与第一模具图案相邻接；在模具图案层形成第二模具图案,第二模具图案的范围与第二镂空区域于模具图案层的垂直投影范围完全重迭；去除第二硬掩膜层。(The invention provides a manufacturing method of an imprinting mold. An imprint mold manufacturing method, comprising: arranging a mold pattern layer on a base material; arranging a first hard mask layer on the mold pattern layer, wherein the first hard mask layer is provided with one or more first hollow areas; forming a first mold pattern on the mold pattern layer, wherein the range of the first mold pattern is completely overlapped with the vertical projection range of the first hollow area on the mold pattern layer; removing the first hard mask layer; arranging a second hard mask layer on the mold pattern layer, wherein the second hard mask layer is provided with one or more second hollow-out areas, and the vertical projection range of the second hollow-out areas on the mold pattern layer is adjacent to the first mold pattern; forming a second mold pattern on the mold pattern layer, wherein the range of the second mold pattern is completely overlapped with the vertical projection range of the second hollow area on the mold pattern layer; and removing the second hard mask layer.)

1. A method of fabricating an imprint mold, comprising:

step S1000: arranging a mold pattern layer on a base material;

step S2000: arranging a first hard mask layer on the mold pattern layer, wherein the first hard mask layer is provided with one or more first hollow areas;

step S3000: forming a first mold pattern on the mold pattern layer, wherein the range of the first mold pattern is completely overlapped with the vertical projection range of the first hollow area on the mold pattern layer;

step S4000: removing the first hard mask layer;

step S5000: arranging a second hard mask layer on the mold pattern layer, wherein the second hard mask layer is provided with one or more second hollow-out areas, and the vertical projection range of the second hollow-out area on the mold pattern layer is adjacent to the first mold pattern;

step S6000: forming a second mold pattern on the mold pattern layer, wherein the range of the second mold pattern is completely overlapped with the vertical projection range of the second hollow area on the mold pattern layer;

step S7000: and removing the second hard mask layer.

2. The method of claim 1, wherein the step S3000 comprises:

arranging a first imprinting photoresist layer on the first hard mask layer and the first hollow area;

imprinting a first imprinting area of the first imprinting photoresist layer to form a first imprinting pattern, wherein the vertical projection range of the first imprinting area on the first hard mask layer completely covers the range of the first hollow area;

the first imprint resist layer and the mold pattern layer are etched to form the first mold pattern on the mold pattern layer.

3. The method of claim 1, wherein the step S6000 comprises:

arranging a second imprinting photoresist layer on the second hard mask layer and the second hollow area;

imprinting a second imprinting area of the second imprinting photoresist layer to form a second imprinting pattern, wherein the vertical projection range of the second imprinting area on the second hard mask layer completely covers the range of the second hollow area;

the second imprint resist layer and the mold pattern layer are etched to form the second mold pattern in the mold pattern layer.

4. The method of claim 3, wherein the first and second imprinting areas are imprinted using the same master mold in the steps S3000 and S6000, respectively.

5. The method of claim 2, wherein the first imprint region of the first imprint photoresist layer is imprinted using contact exposure to form a residual photoresist layer and the first imprint pattern on the residual photoresist layer, wherein:

the first hard mask layer has a hard mask layer thickness H_HM；

The residual photoresist layer has a residual photoresist layer thickness H_RL；

H_HM<H_RL。

6. The imprint mold manufacturing method according to claim 2,

forming a residual photoresist layer and the first imprint pattern on the residual photoresist layer after imprinting the first imprint region of the first imprint photoresist layer, wherein:

the residual photoresist layer has a residual photoresist layer thickness H_RL；

The first imprint pattern has a first height H₁；

Etching the first imprint photoresist layer and the mold pattern layer until the residual photoresist layer is removed:

the first imprint pattern has a second height H₂；

The first imprint resist layer has a top etch ratio E₁；

The first imprint photoresist layer has a bottom etch rate E₂；

Wherein H_RL≦[(H₁–(H₂-H₃))x(E₂/E₁)]。

7. The method of claim 2, wherein the first imprint region of the first imprint photoresist layer is imprinted to form a residual photoresist layer and the first imprint pattern on the residual photoresist layer, the first imprint pattern having a first height H₁In which H is₁Not more than three times the smaller of the line width of the first imprint pattern and the pitch width of the first imprint pattern.

8. The imprint mold manufacturing method according to claim 2,

forming a residual photoresist layer and the first imprint pattern on the residual photoresist layer after imprinting the first imprint region of the first imprint photoresist layer, wherein:

the mold pattern layer has a fourth height H₄；

Etching the first imprint photoresist layer and the mold pattern layer until the residual photoresist layer is removed, wherein:

the first imprint pattern has a second height H₂；

The top etch rate of the imprint photoresist layer is E₁；

Etching the first imprint photoresist layer and the mold pattern layer to expose a portion of the substrate, wherein:

the first imprint pattern has a third height H₃；

The etching rate of the mold pattern layer is E₃；

Wherein (H)₂-H₃)＝(E₁x(H₄/E₃))。

9. The method of claim 1, wherein the step S3000 comprises:

arranging a first pattern photoresist layer on the first hard mask layer;

using a polydimethylsiloxane photomask to contact and expose a first imprinting area of the first pattern photoresist layer so as to form a first exposure pattern, wherein the vertical projection range of the first imprinting area on the first hard mask layer completely covers the range of the first hollow area;

the first patterned photoresist layer and the mold pattern layer are etched to form the first mold pattern on the mold pattern layer.

10. The method of claim 1, wherein the step S3000 comprises:

arranging a first pattern photoresist layer on the first hard mask layer;

exposing a first imprinting area of the first pattern photoresist layer through a photomask by using a UV interference principle to form a first exposure pattern, wherein the vertical projection range of the first imprinting area on the first hard mask layer completely covers the range of the first hollow area;

the first patterned photoresist layer and the mold pattern layer are etched to form the first mold pattern on the mold pattern layer.

11. The method of claim 1, wherein the step S3000 comprises:

arranging a first pattern photoresist layer on the first hard mask layer;

scanning and exposing a first imprinting area of the first pattern photoresist layer through a photomask by using a high-resolution electron beam to form a first exposure pattern, wherein the vertical projection range of the first imprinting area on the first hard mask layer completely covers the range of the first hollow area;

the first patterned photoresist layer and the mold pattern layer are etched to form the first mold pattern on the mold pattern layer.

Technical Field

The invention relates to a manufacturing method of an imprinting (imprint) mold.

Background

In the fabrication technology of a mold having a nanostructure pattern required by the nanoimprint lithography technology, an Electron Beam lithography (Electron Beam lithography) technology is commonly used in combination with an organic photoresist, so as to form the nanostructure pattern on a planar mold. However, the equipment cost for fabricating the nanostructure pattern using the electron beam lithography is high, the lithography fabrication technique is time-consuming and limited to less than 12 inches of wafer, and it is not favorable for fabricating a large-area mold with the nanostructure pattern.

Another method for preparing a large-area mold with a nano-structure pattern is to splice a plurality of small molds to form a large-area mold through a splicing process. One way is to prepare a plurality of small replica molds from a small master mold by photo-polymerization or the like, and to position the replica molds side by side as tiles or tiles to create a large area mold. However, when the small molds are closely arranged, the small molds are prone to have overlapping and breaking phenomena, so that when the small molds are subsequently used as imprinting molds, nanoimprint invalid regions are formed, the nanoimprint quality is affected, and even the problem of subsequent nanostructure etching is caused.

The second mode is to achieve the goal of enlarging the area by a repeated construction (Step and Repeat) mode, but the actual structure at the splicing part is not easy to form a completely continuous ideal splicing interface, and how to achieve the precision requirement of splicing is one of the problems.

In conclusion, the cost for manufacturing a large-area mold with a nanostructure pattern is difficult to reduce, and the improvement space is provided.

Disclosure of Invention

The invention mainly aims to provide a manufacturing method of an imprinting mold, which can reduce the manufacturing cost.

The imprint mold of the present invention has a plurality of mold patterns that are about the same or different, and there is no difference in height between the mold patterns.

The surface of the imprinting mold of the present invention comprises a first region, a second region, and an overlapping region. A first mold pattern is arranged in the first area, and the first mold pattern has a first line width and a first depth. The second region is provided with a second mold pattern, and the second mold pattern has a second line width and a second depth. The overlapping area is located between the first area and the second area, a third mold pattern is arranged in the overlapping area, and the third mold pattern has a third line width and a third depth. The top surfaces of the first mold pattern and the second mold pattern are located at the same level, the third line width is less than or equal to the first line width or the second line width, and the third depth is less than or equal to the first depth or the second depth.

The surface of the imprinting mold of the present invention comprises a first region, a second region, and an overlapping region. A first mold pattern is arranged in the first area, and the first mold pattern has a first line width and a first depth. The second region is provided with a second mold pattern, and the second mold pattern has a second line width and a second depth. The overlapped area is positioned between the first area and the second area, is concave and has a third depth. The top surfaces of the first mold pattern and the second mold pattern are located at the same level, and the third depth is less than or equal to the first depth or the second depth.

The surface of the imprinting mold of the present invention includes a first region and a second region. A first mold pattern is arranged in the first area, and the first mold pattern has a first line width and a first depth. The second area is internally provided with a second mold pattern, the second mold pattern has a second line width and a second depth, and a space is formed between the first area and the second area. The top surfaces of the first mold pattern and the second mold pattern are positioned on the same level, and the distance is not equal to the first line width and the second line width.

The imprint mold manufacturing method of the present invention includes: (step S1000) arranging a mold pattern layer on the substrate; (step S2000) providing a first hard mask layer on the mold pattern layer, wherein the first hard mask layer has one or more first hollow areas; (step S3000) forming a first mold pattern on the mold pattern layer, wherein a range of the first mold pattern completely overlaps with a vertical projection range of the first hollow area on the mold pattern layer; (step S4000) removing the first hard mask layer; (step S5000) disposing a second hard mask layer on the mold pattern layer, wherein the second hard mask layer has one or more second hollow areas, and the vertical projection range of the second hollow areas on the mold pattern layer is adjacent to the first mold pattern; (step S6000) forming a second mold pattern on the mold pattern layer, wherein a range of the second mold pattern completely overlaps with a vertical projection range of the second hollow area on the mold pattern layer; (step S7000) the second hard mask layer is removed.

Drawings

FIGS. 1A to 5B are schematic views of an embodiment of an imprint mold according to the present invention;

FIG. 6 is a schematic flowchart of an embodiment of a method for manufacturing an imprint mold according to the present invention;

FIGS. 7A to 7K are schematic views showing an example of manufacturing an imprint mold using the imprint mold manufacturing method of the present invention;

FIGS. 8A-8C are schematic diagrams of an embodiment of the present invention in which a first imprint photoresist layer and a mold pattern layer are etched to form a first mold pattern on the mold pattern layer;

FIG. 9 is a schematic view of an embodiment of contact exposure using a PDMS mask according to the present invention;

FIG. 10 is a schematic view of an embodiment of the present invention using UV interference principle to expose through a mask;

FIG. 11 is a schematic diagram of an embodiment of the present invention using high resolution electron beams to scan expose through a mask.

Wherein, the reference numbers:

100. 404 first region

200. 505 second region

300 overlap region

311 third pattern unit

312 projection

400 base material

500 mold pattern layer

610 first hard mask layer

611 first hollow out region

620 second hard mask layer

621 second hollow-out region

701 first imprint region

702 second imprint region

710 first imprint photoresist layer

711 first imprint pattern

712 residual photoresist layer

720 second imprint photoresist layer

721 second imprint pattern

810 polydimethylsiloxane photomask

811 polydimethylsiloxane body

812 patterned metal layer

813 ultraviolet light

821 high resolution electron beam

822 template mask

900 impression mould

910. 940 first mold pattern

911. 941 top surface of first mold pattern

920. 950 second mold pattern

921. 951 Top surface of second mold Pattern

930 third mold pattern

931 top surface of the third mold pattern

D1 and D4 first depth

D2 and D5 second depth

Third depth D3

H1 first height

H2 second height

H3 third height

H4 fourth height

HHM hard mask layer thickness

HRL residual photoresist layer thickness

S1000 step

S2000 step

S3000 step

S4000 step

S5000 step

S6000 step

S7000 step

W1, W4 first line width

W2, W5 second line width

W3 third linewidth

W312 projected linewidth

W311 third pattern unit line width

W6 distance

Detailed Description

In the drawings, the thickness of layers, films, panels, regions, etc. have been exaggerated for clarity. Like reference numerals refer to like elements throughout the specification. It will be understood that when an element such as a layer, film, region, or substrate is referred to as being "on" or "connected to" another element, it can be directly on or connected to the other element or intervening elements may also be present. In contrast, when an element is referred to as being "directly on" or "directly connected to" another element, there are no intervening elements present. As used herein, "connected" may refer to physically and/or electrically connected.

As used herein, "about", "approximately" or "substantially" includes the stated value and the average value within an acceptable range of deviation of the specified value as determined by one of ordinary skill in the art, taking into account the measurement in question and the specified amount of error associated with the measurement (i.e., the limitations of the measurement system). For example, "about" may mean within one or more standard deviations of the stated value, or within ± 30%, ± 20%, ± 10%, ± 5%.

Unless defined otherwise, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. It will be further understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the relevant art and the present invention and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.

As shown in fig. 1A to 5B, the imprint mold of the present invention has a plurality of mold patterns that are about the same or different, and there is substantially no height step difference between the mold patterns. More specifically, the surface of the imprint mold of the present invention includes a plurality of regions, each region having a mold pattern disposed therein, and the mold patterns are substantially free of height differences therebetween, i.e., the top surfaces thereof are substantially flush.

As shown in fig. 1A and 1B, the surface of the imprint mold 900 includes a first region 100, a second region 200, and an overlap region 300 according to a top view and a side view of an embodiment of the present invention. A first mold pattern 910 is disposed in the first region 100, the first mold pattern 910 having a first line width W₁And a first depth D₁. A second mold pattern 920 is disposed in the second region 200, and the second mold pattern 920 has a second line width W₂And a second depth D₂. Overlapping area300 are located between the first area 100 and the second area 200, a third mold pattern 930 is disposed in the overlapping area 300, the third mold pattern 930 has a third line width W₃And a third depth D₃. Wherein the top surface 911 of the first mold pattern 910, the top surface 921 of the second mold pattern 920, and the top surface 931 of the third mold pattern 930 are at about the same level. Further, the line width and the depth respectively refer to the cross-sectional width and the height of the pattern structure.

In the embodiment shown in FIG. 1B, the third linewidth W₃First linewidth W ≦₁And a second line width W₂Wherein the first line width W₁And a second line width W₂May be substantially the same or different. However, in various embodiments, the third line width W₃May be less than or equal to the first line width W₁And a second line width W₂One of them.

In the embodiment shown in FIG. 1B, the third depth D₃First depth D ≦₁And a second depth D₂Wherein the first depth D₁And a second depth D₂May be substantially the same or different. However, in a different embodiment, the third depth D₃May be only equal to or less than the first depth D₁And a second depth D₂One of them.

As shown in fig. 2A and 2B, the third mold pattern 930 includes a plurality of third pattern units 311, a protrusion 312 is disposed at a root of each of the third pattern units 311, and each of the third pattern units 311 has a protrusion line width W at the protrusion 312₃₁₂And each of the third pattern units 311 except the protrusion 312 has a third pattern unit line width W₃₁₁. Further, the protrusion 312 may be regarded as a step-shaped structure connected to the bottom of the third pattern unit 311. The depth of the third pattern unit 311 is equal to the third depth D₃Height D of the projection 312₄Is equal to the first depth D₁And a second depth D₂The difference of (a). Third line width W₃Equal to the projected line width W₃₁₂And the third pattern unit line width W₃₁₁The sum of (1). Wherein, except for the projection 312 in addition to the description related to the third pattern unit, the description related to the first mold pattern 910 (e.g., the first line width W) is disposed in the first region 100₁A first depth D₁Or otherwise), a description associated with second mold pattern 920 is provided within second region 200 (e.g.: second line width W₂A second depth D₂Or otherwise) and descriptions associated with the third mold pattern 930 disposed within the overlap area 300 (e.g.: third line width W₃A third depth D₃Or other descriptions) can be found in the previous examples and are not described in further detail herein.

In the implementation shown in fig. 2A and 2B, there is no height difference between the third mold pattern 930 and the first and second mold patterns 910 and 920, except that there is no height difference between the first and second mold patterns 910 and 920. In other words, the top surface 911 of the first mold pattern 910, the top surface 921 of the second mold pattern 920, and the top surface 931 of the third mold pattern 930 are about flush. Therefore, the optical difference of the overlapped blocks can be lightened. However, in the top and side views of different embodiments as shown in fig. 3A and 3B, the top surface 931 of the third mold pattern 930 may be lower than the top surfaces 911 and 921 of the first and second mold patterns 910 and 920.

In the embodiment shown in fig. 1A to 3B, the third mold pattern 930 is disposed in the overlap region 300. Wherein the top surface 911 of the first mold pattern 910 and the top surface 921 of the second mold pattern 920 are at about the same level and have a third depth D₃<A first depth D₁Or a second depth D₂. However, in various embodiments, no pattern may be disposed in the overlap area 300. For example, as shown in the top and side views of the embodiment shown in FIGS. 4A and 4B, the overlap area 300 is recessed and has a third depth D₃. Wherein the top surface 911 of the first mold pattern 910 and the top surface 921 of the second mold pattern 920 are at about the same level and have a third depth D₃Is substantially equal to the first depth D₁Or a second depth D₂. Furthermore, the first mold pattern 910 is disposed in the first region 100 of FIG. 3B and FIG. 4B (e.g., the first line width W)₁A first depth D₁Or otherwise described) Within the second region 200 is disposed a description of the second mold pattern 920 (e.g.: second line width W₂A second depth D₂Or otherwise described) and a third linewidth W₃Or other descriptions can be referred to the previous examples, and are not repeated herein.

In the imprint mold of the present invention, the first depth D₁And a second depth D₂Optionally, about equal or unequal, first linewidth W₁And a second line width W₂About equal or unequal may be selected. Specifically, in the embodiments shown in FIGS. 1B, 2B, and 3B, the first depth D₁And a second depth D₂Not equal, whereas in the embodiment shown in FIG. 4B, the first depth D₁And a second depth D₂About equal. In the embodiments shown in FIGS. 1B, 2B, 3B, and 4B, the first line width W₁And a second line width W₂Not equal.

As shown in fig. 5A and 5B, the surface of the imprint mold 900 of the present embodiment includes a first region 404 and a second region 505 in a top view and a side view of another embodiment of the present invention. A first mold pattern 940 is disposed in the first region 404, the first mold pattern 940 having a first line width W₄And a first depth D₄. A second mold pattern 950 is disposed in the second region 500, the second mold pattern 950 having a second line width W₅And a second depth D₅The first region 400 and the second region 500 have a distance W therebetween₆. Wherein the top surfaces 941 and 951 of the first and second mold patterns 940 and 950 are at about the same level and a distance W therebetween₆And a first line width W₄And a second line width W₅Are all not equal.

A first depth D₄And a second depth D₅About equal or unequal may be selected. First line width W₄And a second line width W₅About equal or unequal may be selected. Specifically, in the embodiment shown in FIG. 5B, the first depth D₄And a second depth D₅Unequal, first linewidth W₄And a second line width W₅About equal. The line width and the depth refer to the cross-sectional width and the height of the pattern structure, respectively.

Further, the imprint mold 900 of the present invention may be a concave type or a convex type according to the matching requirements of the overlapping area 300 and the optics, and has the arrangement manner as shown in the different embodiments of fig. 3B, 4B and 5B.

As shown in the flowchart of fig. 6, the imprint mold manufacturing method of the present invention includes the following steps, as in the display apparatus of the foregoing embodiment.

Step S1000, a mold pattern layer is disposed on the substrate. For example: in one embodiment, as shown in FIG. 7A, a mold pattern layer 500 is deposited on a substrate 400. The substrate 400 may include glass, polymer, metal, or metal oxide. The mold pattern layer 500 may be a single layer or a multi-layer structure, and its material includes silicon dioxide or other suitable materials. The deposition may be performed by Physical Vapor Deposition (PVD), such as a sputtering process, and/or by Chemical Vapor Deposition (CVD).

Step S2000 is to dispose a first hard mask layer on the mold pattern layer, wherein the first hard mask layer has one or more first hollow areas. For example: in one embodiment, as shown in fig. 7B, a first hard mask layer 610 is disposed on the mold pattern layer 500, wherein the first hard mask layer 610 has one or more first hollowed-out regions 611. The first hard Mask layer 610 may be a single layer or a multi-layer structure, and may be a Metal Mask or an alloy Mask, and may be deposited using electroplating, electroless plating, physical vapor deposition, and/or chemical vapor deposition.

Step S3000, a first mold pattern is formed on the mold pattern layer, wherein a range of the first mold pattern completely overlaps with a vertical projection range of the first hollow area on the mold pattern layer. For example: in one embodiment, step S3000 includes: as shown in fig. 7C, a first imprint photoresist layer 710 is disposed on the first hard mask layer 610 and the first hollow region 611; then, as shown in fig. 7D, the first imprint region 701 of the first imprint photoresist layer 710 is imprinted to form a first imprint pattern 711, wherein a vertical projection range of the first imprint region 701 on the first hard mask layer 610 completely covers a range of the first hollow region 611; thereafter, the first imprint photoresist layer 710 and the mold pattern layer 500 are etched to form a first mold pattern 910 on the mold pattern layer 500, as shown in fig. 7E. In order to ensure that the area of the first mold pattern 910 formed after etching, preferably the area where the first imprint pattern 711 is formed, in addition to the first hollow 611, also covers the first imprint resist layer 710 on the portion of the first hard mask layer 610 adjacent to the first hollow 611.

In one embodiment, Nano-imprinting (Nano-imprint lithography) is used to imprint the first imprint regions 701 of the first imprint resist layer 710 to form the first imprint patterns 711. The detailed steps of etching the first imprint photoresist layer 710 and the mold pattern layer 500 to form the first mold pattern 910 on the mold pattern layer 500 can be seen in fig. 8A to 8C. Further, the first imprint photoresist layer 710 having the first imprint pattern 711 is used as a mask during etching, and since the first imprint pattern 711 is formed by nanoimprinting, the first mold pattern 910 formed by final etching is also in the nanometer level.

In one embodiment using contact exposure, the first imprint region 701 of the first imprint photoresist layer 710 shown in FIG. 7D forms a residual photoresist layer 712 and a first imprint pattern 711 on the residual photoresist layer 712 shown in FIG. 8A after imprinting, wherein: the first hard mask layer 610 has a hard mask layer thickness H_HM(ii) a The residual photoresist layer 712 has a residual photoresist layer thickness H_RL；H_HM<H_RL。

In a different embodiment, the first imprint region 701 of the first imprint photoresist layer 710 shown in FIG. 7D forms the residual photoresist layer 712 and the first imprint pattern 711 on the residual photoresist layer 712 as shown in FIG. 8A after imprinting, wherein the residual photoresist layer 712 has a residual photoresist layer thickness H_RLThe first imprint pattern 711 has a first height H₁(ii) a When the first imprint photoresist layer 710 and the mold pattern layer 500 are etched until the residual photoresist layer 712 (see FIG. 8A) is removed as shown in FIG. 8B: the first imprint pattern 711 has a second height H₂The top etch rate (notching) of the first imprint photoresist layer 710 is E₁The bottom etch rate (bottom etch rate) of the first imprint photoresist layer 710 is E₂(ii) a Wherein H_RL≦[(H₁–(H₂-H₃))x(E₂/E₁)]。

In a different embodiment, after the first imprint region 701 of the first imprint photoresist layer 710 shown in FIG. 7D is imprinted, the residual photoresist layer 712 and the first imprint pattern 711 on the residual photoresist layer 712 are formed as shown in FIG. 8A, and the first imprint pattern 711 has a first height H₁In which H is₁≦ 3 × min (line width of the first imprint pattern 711 or pitch width of the first imprint pattern 711)), that is, H₁Not more than three times the smaller of the line width of the first imprint patterns 711 and the pitch width of the first imprint patterns 711. In other words, the first imprint patterns 711 have a height limit of a width-to-depth ratio of 1: 3.

In a different embodiment, the first imprint region 701 of the first imprint photoresist layer 710 shown in FIG. 7D forms the residual photoresist layer 712 and the first imprint pattern 711 on the residual photoresist layer 712 as shown in FIG. 8A after performing the imprinting, wherein the mold pattern layer 500 has the fourth height H₄(ii) a When the first imprint photoresist layer 710 and the mold pattern layer 500 are etched until the residual photoresist layer 712 (see FIG. 8A) is removed as shown in FIG. 8B: the first imprint pattern 711 has a second height H₂The top etch rate (top etching rate) of the first imprint photoresist layer 710 is E₁The bottom etch rate (bottom etch rate) of the first imprint photoresist layer 710 is E₂(ii) a When the first imprint resist layer 710 and the mold pattern layer 500 are etched to expose a portion of the substrate 400 as shown in FIG. 8C: the first imprint pattern 711 has a third height H₃The etching rate (etching rate) of the mold pattern layer 500 is E₃(ii) a Wherein (H)₂-H₃)＝(E₁x(H₄/E₃))。

Step S4000, the first hard mask layer is removed. For example: in one embodiment, the first hard mask layer 610 shown in fig. 7E is removed by using an etching solution (e.g., an acid solution) for soaking or dry etching, etc., so as to form the substrate 400 having the mold pattern layer 500 with the first mold pattern 910 thereon as shown in fig. 7F.

Step S5000, a second hard mask layer is disposed on the mold pattern layer, wherein the second hard mask layer has one or more second hollow areas, and the vertical projection range of the second hollow area on the mold pattern layer is adjacent to the first mold pattern. For example: in one embodiment, as shown in fig. 7G, a second hard mask layer 620 is disposed on the mold pattern layer 500, wherein the second hard mask layer 620 has one or more second hollow areas 621, and the vertical projection range of the second hollow areas 621 on the mold pattern layer is adjacent to the first mold pattern 910 by using a mask alignment technique. For example, the second hard mask layer 620 covers the first mold pattern 910, and the second hollow area 621 exposes the mold pattern layer 500 adjacent to the first mold pattern 910. The second hard Mask layer 620 may be a single layer or a multi-layer structure, and may be a Metal Mask or an alloy Mask, and may be deposited by electroplating, electroless plating, physical vapor deposition, and/or chemical vapor deposition.

Step S6000, forming a second mold pattern on the mold pattern layer, wherein a range of the second mold pattern completely overlaps with a vertical projection range of the second hollow area on the mold pattern layer. For example: in one embodiment, step S6000 includes: as shown in fig. 7H, a second imprint photoresist layer 720 is disposed on the second hard mask layer 620 and the second hollow-out region 621; then, as shown in fig. 7I, the second imprinting area 702 of the second imprinting photoresist layer 720 is imprinted to form a second imprinting pattern 721, wherein the vertical projection range of the second imprinting area 702 on the second hard mask layer 620 completely covers the range of the second hollow area 621; thereafter, the second imprint photoresist layer 720 and the mold pattern layer 500 are etched to form a second mold pattern 920 on the mold pattern layer 500, as shown in fig. 7J. In order to ensure that the area of the second mold pattern 920 formed after etching, preferably the area where the second imprint pattern 721 is formed, in addition to the second hollow area 621, also covers the second imprint resist layer 720 on the portion of the second hard mask layer 620 adjacent to the second hollow area 621. In one embodiment, Nano-imprinting (Nano-imprinting) is used to imprint the second imprint region 702 of the second imprint resist layer 720 to form the second imprint patterns 721. The detailed steps for etching the second imprint photoresist layer 720 and the mold pattern layer 500 to form the second mold pattern 920 on the mold pattern layer 500 are similar to those shown in fig. 8A to 8C, as can be seen from the above description. Further, the second imprint photoresist layer 720 having the second imprint patterns 721 is used as a mask during the etching process, and since the second imprint patterns 721 are formed by nanoimprinting, the second mold pattern 920 finally formed by etching is also in the nanometer level.

In step S7000, the second hard mask layer is removed. More specifically, in one embodiment, the second hard mask layer 620 shown in fig. 7J is removed by using an etching solution (e.g., an acid solution) for soaking or dry etching, etc., so as to form the substrate 400 having the mold pattern layer 500 with the second mold pattern 920 thereon as shown in fig. 7K.

In the embodiments shown in fig. 7A to 7K, the first stamping region 701 (fig. 7D) and the second stamping region (fig. 7I) are stamped by using the same mother mold in steps S3000 and S6000, so as to form the first mold pattern 910 and the second mold pattern 920 with approximately the same pattern. Since the vertical projection range of the second hollow area on the mold pattern layer is adjacent to the first mold pattern by using the well-established mask alignment technique when the second hard mask layer is disposed, the second mold pattern 920 formed later is naturally adjacent to the first mold pattern 910. Therefore, the mold pattern with the substantially larger size can be formed by directly using the master mold with the smaller size, the cost and the procedure for manufacturing the master mold with the larger size are saved, and the manufacturing cost can be further reduced. However, in different embodiments, if different mother molds are used to imprint the first imprinting area 701 (fig. 7D) and the second imprinting area (fig. 7I), respectively, the first mold pattern 910 and the second mold pattern 920 with different patterns and still adjacent to each other can be formed, increasing the variation of the mold patterns.

Various patterning methods may be used in steps S3000 and S6000.

In one embodiment, step S3000 includes: as shown in fig. 7C, a first patterned photoresist layer 710 is disposed on the first hard mask layer 610; using a Polydimethylsiloxane (PDMS) mask to contact and expose the first imprint region 701 of the first pattern photoresist layer 710 shown in fig. 7D to form a first imprint exposure pattern, wherein a vertical projection range of the first imprint region 701 on the first hard mask layer 610 completely covers a range of the first hollow region 611; the first pattern photoresist layer 710 and the mold pattern layer 500 are etched as shown in fig. 8A to 8C to form a first mold pattern 910 on the mold pattern layer 500 as shown in fig. 7E. As shown in fig. 9, a contact exposure method using a polydimethylsiloxane mask is illustrated, in which a polydimethylsiloxane mask 810 includes a polydimethylsiloxane body 811 and a patterned metal layer 812, and an ultraviolet light 813 is irradiated on the first patterned photoresist layer 710 through the polydimethylsiloxane mask 810 to perform exposure.

In one embodiment, step S3000 includes: as shown in fig. 7C, a first patterned photoresist layer 710 is disposed on the first hard mask layer 610; exposing the first imprinting area 701 of the first patterned photoresist layer 710 shown in fig. 7D through a mask by using a UV interference principle to form a first exposure pattern, wherein a vertical projection range of the first imprinting area 701 on the first hard mask layer 610 completely covers a range of the first hollowed-out area 611; the first pattern photoresist layer 710 and the mold pattern layer 500 are etched as shown in fig. 8B to 8C to form a first mold pattern 910 on the mold pattern layer 500 as shown in fig. 7E. The exposure through the mask by the UV interference principle is shown in FIG. 10.

In one embodiment, step S3000 includes: as shown in fig. 7C, a first patterned photoresist layer 710 is disposed on the first hard mask layer 610; scanning and exposing the first imprinting area 701 of the first pattern photoresist layer 710 shown in fig. 7D through a mask by using a high resolution electron beam to form a first exposure pattern, wherein a vertical projection range of the first imprinting area 701 on the first hard mask layer 610 completely covers a range of the first hollowed-out area 611; the first pattern photoresist layer 710 and the mold pattern layer 500 are etched as shown in fig. 8B to 8C to form a first mold pattern 910 on the mold pattern layer 500 as shown in fig. 7E. In the scanning exposure method using the high resolution electron beam through the Mask, as shown in fig. 11, the high resolution electron beam 821 irradiates the first pattern photoresist layer 710 through a Stencil Mask 822 to perform exposure.

The present invention is capable of other embodiments, and various changes and modifications may be made by one skilled in the art without departing from the spirit and scope of the invention as defined in the appended claims.