Marangoni drying device applied to wafer post-processing
阅读说明:本技术 一种应用于晶圆后处理的马兰戈尼干燥装置 (Marangoni drying device applied to wafer post-processing ) 是由 赵德文 申兵兵 李长坤 路新春 于 2020-07-10 设计创作,主要内容包括:本发明公开了一种应用于晶圆后处理的马兰戈尼干燥装置,包括:用于在晶圆从清洗液面倾斜升起的过程中向晶圆第一表面附着的弯液面喷射干燥气体的第一喷气杆和用于驱动第一喷气杆绕其轴线方向旋转的第一旋转驱动模块、以及向晶圆第二表面附着的弯液面喷射干燥气体的第二喷气杆和用于驱动第二喷气杆绕其轴线方向旋转的第二旋转驱动模块,其中,弯液面为气液固三相交界区域;第一喷气杆和第二喷气杆位于不同高度以使第一喷气杆喷射到晶圆第一表面的弯液面处的干燥气体浓度与第二喷气杆喷射到晶圆第二表面的弯液面处的干燥气体浓度相差比例不超过20%。(The invention discloses a marangoni drying device applied to wafer post-processing, which comprises: the wafer cleaning device comprises a first gas spraying rod, a first rotation driving module, a second gas spraying rod and a second rotation driving module, wherein the first gas spraying rod is used for spraying dry gas to a meniscus attached to the first surface of a wafer in the process that the wafer is obliquely lifted from a cleaning liquid surface; the first gas injection rod and the second gas injection rod are positioned at different heights so that the concentration of the drying gas injected by the first gas injection rod to the meniscus of the first surface of the wafer and the concentration of the drying gas injected by the second gas injection rod to the meniscus of the second surface of the wafer are different by a proportion of no more than 20%.)
1. A marangoni drying device applied to wafer post-processing is characterized by comprising:
the wafer cleaning device comprises a first gas spraying rod, a first rotary driving module, a second gas spraying rod and a second rotary driving module, wherein the first gas spraying rod is used for spraying dry gas to a meniscus attached to a first surface of a wafer in the process that the wafer is obliquely lifted from a cleaning liquid surface, the first rotary driving module is used for driving the first gas spraying rod to rotate around the axial direction of the first gas spraying rod, the second gas spraying rod is used for spraying dry gas to the meniscus attached to a second surface of the wafer, the second rotary driving module is used for driving the second gas spraying rod to rotate around the axial direction of the second gas spraying rod, and the meniscus is a gas-liquid-solid;
the first gas injection rod and the second gas injection rod are positioned at different heights so that the concentration of the drying gas injected to the meniscus of the first surface of the wafer by the first gas injection rod and the concentration of the drying gas injected to the meniscus of the second surface of the wafer by the second gas injection rod are different by a ratio of not more than 20%;
the distance between the outer side surface of the first air injection rod and the outer side surface of the second air injection rod is not less than 3 mm;
the first air injection rod and the second air injection rod are hollow air injection rods with the same structure, the vertical distance from the bottom ends of the air injection rods to the liquid level is 5-15 mm, and the horizontal distance from the end points, closest to the wafer, of the air injection rods to the wafer is 5-10 mm.
2. The marangoni drying device of claim 1, wherein the first air injection rod is higher than the second air injection rod in position, and an included angle θ between a connecting line direction between the axis of the first air injection rod and the axis of the second air injection rod and a horizontal direction satisfies 0 ° < θ ≦ 40 °.
3. The marangoni drying apparatus of claim 2, wherein the first air jet bar has an outer side surface closest to the wafer at a vertical distance l from the first surface of the wafer1Satisfy 1mm<l1≤15mm。
4. The marangoni drying apparatus of claim 3, wherein the second air jet bar has an outer side surface closest to the wafer at a vertical distance l from the second surface of the wafer2Satisfy the requirement of1mm<l2≤15mm。
5. The marangoni drying apparatus of claim 4, wherein an angle between a gas ejection direction of the first gas ejection rod and a horizontal direction is 10 ° to 80 °, and an angle between a gas ejection direction of the second gas ejection rod and the horizontal direction is 10 ° to 70 °.
6. A marangoni drying apparatus according to claim 2, wherein the gas injection bar is provided with a plurality of gas injection holes for injecting the drying gas simultaneously or with elongated slits at intervals in a length direction.
7. A marangoni drying apparatus as claimed in claim 6, wherein the diameter d of the gas injection holes is such that1No more than 2mm, and the distance l between two adjacent gas injection holes3Not greater than 30 mm.
8. A marangoni drying apparatus as claimed in claim 6, wherein the elongate slot has a length l4300mm to 400mm, and a width d2Not exceeding 1 mm.
Technical Field
The invention relates to the technical field of chemical mechanical polishing post-treatment, in particular to a Marangoni drying device applied to wafer post-treatment.
Background
Chemical Mechanical Polishing (CMP) is an ultra-precise surface processing technique for obtaining global Planarization in the fabrication of Integrated Circuits (ICs). With the development of integrated circuit manufacturing technology, the control of the defects on the surface of the wafer is more and more strict. During the wafer manufacturing process, the surface of the wafer may absorb contaminants such as particles or organic substances to generate a large number of defects, which require a post-treatment process to remove.
Particularly, since chemicals and abrasives used in a large amount in chemical mechanical polishing cause contamination of a wafer surface, a post-treatment process is introduced after polishing to remove the contamination of the wafer surface, and the post-treatment process generally consists of cleaning and drying to provide a smooth and clean wafer surface.
The purpose of cleaning is to remove particles and various chemicals from the surface of the wafer and avoid corrosion and damage to the surface and internal structures during the cleaning process, and the current common wet cleaning is to clean the wafer in a solution environment, such as soaking with a cleaning agent, mechanical scrubbing, wet chemical cleaning, and the like.
After cleaning, the wafer surface may retain a lot of water or residues of the cleaning solution. Since impurities are dissolved in the water or the residues of the cleaning solution, if the residual liquid is allowed to evaporate and dry, the impurities will adhere to the surface of the wafer again, causing contamination and even destroying the structure of the wafer. For this reason, the wafer surface needs to be dried to remove these residual liquids. In the traditional rotary drying mode, the thickness of the residual water film after drying is very large and can reach micron level or above, so that the water mark defect is easily caused.
In conclusion, the prior art has the problems of poor wafer drying effect and easy residual liquid.
Disclosure of Invention
The embodiment of the invention provides a marangoni drying device applied to wafer post-processing, and aims to at least solve one of the technical problems in the prior art.
The marangoni drying device applied to wafer post-processing provided by the embodiment of the invention comprises:
the wafer cleaning device comprises a first gas spraying rod, a first rotation driving module, a second gas spraying rod and a second rotation driving module, wherein the first gas spraying rod is used for spraying dry gas to a meniscus attached to the first surface of a wafer in the process that the wafer is obliquely lifted from a cleaning liquid surface;
the first gas injection rod and the second gas injection rod are positioned at different heights so that the concentration of the drying gas injected to the meniscus of the first surface of the wafer by the first gas injection rod and the concentration of the drying gas injected to the meniscus of the second surface of the wafer by the second gas injection rod are different by a ratio of not more than 20%;
the distance between the outer side surface of the first air injection rod and the outer side surface of the second air injection rod is not less than 3 mm;
the first air injection rod and the second air injection rod are hollow air injection rods with the same structure, the vertical distance from the bottom ends of the air injection rods to the liquid level is 5-15 mm, and the horizontal distance from the end points, closest to the wafer, of the air injection rods to the wafer is 5-10 mm.
In one embodiment, the first air injection rod is higher than the second air injection rod in height, and the included angle theta between the connecting line direction between the axis of the first air injection rod and the axis of the second air injection rod and the horizontal direction satisfies 0 degrees < theta < 40 degrees, and preferably 0 degrees < theta < 20 degrees.
In one embodiment, the outer side of the first air injection rod is closest to the wafer and is at a vertical distance l from the first surface of the wafer1Satisfy 1mm<l1Less than or equal to 15mm, preferably 1.5mm<l1≤6mm。
In one embodiment, the outer side of the second air injection rod is closest to the vertical distance l from the second surface of the wafer2Satisfy 1mm<l2Less than or equal to 15mm, preferably 1.5mm<l2≤6mm。
In one embodiment, the gas injection direction of the first gas injection bar is at an angle of 10 ° to 80 ° with the horizontal direction, and the gas injection direction of the second gas injection bar is at an angle of 10 ° to 70 ° with the horizontal direction.
In one embodiment, the gas injection rod is provided with a plurality of gas injection holes for simultaneously injecting the drying gas or with elongated slits at intervals in a length direction.
In one embodiment, the diameter d of the gas injection holes1No more than 2mm, and the distance l between two adjacent gas injection holes3Not greater than 30 mm.
In one embodiment, the length l of the elongated slit4300mm to 400mm, and a width d2Not exceeding 1 mm.
The embodiment of the invention has the beneficial effects that: through reasonable structural layout and parameter setting, the dry gas with certain concentration is uniformly distributed near the three-phase contact line, the concentration of the dry gas near the three-phase contact line is improved, the symmetry of drying two surfaces of the wafer is improved, and the drying effect of the two surfaces of the wafer is enhanced.
Drawings
The advantages of the invention will become clearer and more readily appreciated from the detailed description given with reference to the following drawings, which are given by way of illustration only and do not limit the scope of protection of the invention, wherein:
FIG. 1 is a schematic diagram of a wafer post-processing system according to an embodiment of the present invention;
fig. 2 is a schematic diagram illustrating a drying principle of a marangoni drying apparatus according to an embodiment of the present invention;
FIG. 3 is a schematic structural diagram of an air injection rod according to an embodiment of the present invention;
FIG. 4 is a schematic structural diagram of an air injection rod according to another embodiment of the present invention;
FIG. 5 shows the wafer lifting device lifting the wafer to a first position;
FIG. 6 shows the wafer lifting device lifting the wafer to a second position;
FIG. 7 shows the wafer lifting device lifting the wafer off the liquid surface;
fig. 8 is a schematic structural diagram illustrating a jacking mechanism according to an embodiment of the present invention;
fig. 9 is a schematic structural diagram of a follower mechanism provided in an embodiment of the present invention;
fig. 10 is a schematic structural view of a clamping mechanism according to an embodiment of the present invention;
fig. 11 is a schematic structural diagram of a wafer spacing device according to an embodiment of the present invention.
Detailed Description
The technical solution of the present invention will be described in detail with reference to the following embodiments and accompanying drawings. The embodiments described herein are specific embodiments of the present invention for the purpose of illustrating the concepts of the invention; the description is intended to be illustrative and exemplary and should not be taken to limit the scope of the invention. In addition to the embodiments described herein, those skilled in the art will be able to employ other technical solutions which are obvious based on the disclosure of the claims and the specification thereof, and these technical solutions include technical solutions which make any obvious replacement or modification of the embodiments described herein. It should be understood that, unless otherwise specified, the following description of the embodiments of the present invention is made for the convenience of understanding, and the description is made in a natural state where relevant devices, apparatuses, components, etc. are originally at rest and no external control signals and driving forces are given.
Further, it is also noted that terms used herein such as front, back, up, down, left, right, top, bottom, front, back, horizontal, vertical, and the like, to denote orientation, are used merely for convenience of description to facilitate understanding of relative positions or orientations, and are not intended to limit the orientation of any device or structure.
First, a wafer post-processing system according to an embodiment of the invention will be described with reference to fig. 1. As shown in fig. 1, the wafer post-processing system includes a cleaning tank 1, a liquid spraying device 2, a
The cleaning tank 1 is used for containing liquid for cleaning the wafer. The liquid may be deionized water.
The liquid spraying device 2 is arranged at the upper part of the cleaning tank 1 and is positioned below the liquid level in the cleaning tank 1, and is used for spraying liquid to the surface of the wafer to flush the wafer in the process that the wafer moves downwards and is immersed in the liquid; specifically, the liquid shower 2 includes a pair of opposing shower pipes defining a first port 11 therebetween.
And the Marangoni
And a
A wafer lifting device 5 for lifting the wafer immersed therein from the liquid in a second orientation.
And a wafer limiting device 6 (not shown in fig. 1) installed inside the cleaning tank 1 and used for limiting the two sides of the wafer under the liquid surface during the process that the wafer rises along the second orientation.
As shown in fig. 1, in one embodiment, a pair of shower pipes of the liquid shower apparatus 2 are provided in the upper portion of the cleaning tank 1 below the liquid level in the cleaning tank 1, and each shower pipe is provided with a plurality of nozzles as a set. When the manipulator puts the wafer into the cleaning tank 1 through the first port 11 along a first direction, two groups of nozzles of the two spray water pipes spray water to two surfaces of the wafer relatively so as to wash the wafer.
As shown in fig. 2, in one embodiment, the
the wafer cleaning device comprises a first
the first and second
In another embodiment, the
As shown in fig. 2, the liquid rises along the surface of the wafer due to the wetting action of the liquid, and the contact liquid level at the intersection of the gas (air), the liquid (cleaning liquid) and the solid (wafer) presents a meniscus, i.e., a meniscus, in a concave shape under the action of the surface tension of the liquid. When the wafer is pulled out from the liquid surface at a constant speed, the
As shown in fig. 2, the first
It can be understood that when the configuration of the structural parameters of the drying device is not reasonable, the concentration distribution of the drying gas near the three-phase contact line may be uneven, for example, the concentration of the gas near the gas injection holes is extremely high and the concentration of the gas far away from the gas injection holes is extremely low, thereby causing inconsistent drying effect at different areas on the surface of the wafer; alternatively, the concentration of the drying gas sprayed on the surface of the wafer may be low, and the drying effect may be reduced. This embodiment makes the dry gas evenly distributed of certain concentration near three-phase contact line through reasonable structural layout and parameter setting, has improved near three-phase contact line's dry gas concentration, has improved simultaneously and has carried out dry symmetry to two surfaces of wafer, has strengthened the drying effect on wafer two sides.
The first
As shown in fig. 2, since the wafer is in an inclined state during the rising process, in order to make the first and second air injection bars 31 and 32 approximately symmetrical with respect to the wafer and make the concentrations of the air flows injected from the two air injection bars onto the two opposite surfaces of the wafer close to each other, the height of the first
It can be understood that when the wafer is lifted, the wafer may slightly shake due to the connection process between the
In one embodiment, the outer side of the first
In one embodiment, the outer side of the second
Since the gas concentration sprayed from the gas spraying bar to the wafer surface is too low to generate the marangoni effect when the gas spraying bar is too far away from the wafer1And l2Not more than 15mm to improve the drying effect of the wafer.
In one embodiment, the first and second air injection bars 31 and 32 are hollow air injection bars having the same structure. The first and second gas injection bars 31 and 32 are respectively connected to a gas supply source for supplying a dry gas through a pipe, the dry gas flows into the hollow portion of the gas injection bars through gas inlets of the gas injection bars, and the magnitudes of the gas flows into the first and second gas injection bars 31 and 32 are substantially the same.
As shown in fig. 3, in one embodiment, a plurality of gas injection holes 33 for simultaneously injecting the dry gas are provided at intervals in a length direction of the gas injection rod in communication with the hollow portion, and the dry gas is injected outward through the gas injection holes 33. The plurality of gas injection holes 33 simultaneously inject the drying gas to form a curtain to inject the meniscus region through the curtain to dry the wafer.
Wherein, the length of the air injection rod is greater than the diameter of the wafer. The diameter of the air injection rod is 12mm, the vertical distance from the bottom end of the air injection rod to the liquid level is 5-15 mm, and the horizontal distance from the end point nearest to the wafer is 5mmTo 10 mm. The total flow of gas into the two gas injection bars is 5 to 50L/min. The gas injection holes 33 are at an angle in the range of 10 to 50 degrees to the horizontal plane. Diameter d of the
In particular, the gas injection holes 33 may adopt a diameter d1Circular holes of 0.1 to 0.5mm, preferably 0.1 mm. The distance between two adjacent gas injection holes 33 is 2 to 10mm, preferably 5 mm.
In another embodiment, as shown in fig. 4, the air injection bar is provided with an
Wherein the length l of the elongated slit 344300mm to 400mm, and a width d2Not exceeding 1 mm. In particular, the elongated slit 34 extends in a horizontal direction with a length l4Can be larger than the diameter of the wafer and the width d2May be 0.1 to 0.5mm, preferably 0.1 mm.
As shown in fig. 5, in one embodiment, the
After the robot arm places the wafer on the arcuate bracket in the first orientation, the swing shaft, the arcuate bracket and the wafer are controlled by the wafer tilt drive motor to swing to a second orientation to orient the wafer toward the
As shown in fig. 5 to 7, in one embodiment, the wafer lifting apparatus 5 includes:
the jacking
the follow-
the
wherein the lift-up
As shown in fig. 5, the wafer is lifted by the lift-
As shown in fig. 6, when the wafer is lifted to the second position by the cooperative movement of the lift-up
As shown in fig. 7, after the
As shown in fig. 8, the
In one embodiment, the lift piece 511 includes a groove formed on an upper surface thereof for receiving a bottom edge of the wafer, and a through hole formed through the groove and a bottom surface of the lift piece 511 to prevent impurities from being deposited in the groove.
As shown in fig. 9, the following
As shown in fig. 10, the
Fig. 11 is an internal perspective view of the cleaning tank 1 with the front panel removed. As shown in fig. 11, the wafer stopper 6 is used for the wafer to obliquely ride thereon when the
In one embodiment, as shown in FIG. 11, the wafer restraint device 6 is integrally formed with the cleaning tank 1. Specifically, the pad block 61 is integrally formed with the side wall of the cleaning tank 1.
The width of the bottom surface of the notch 62 for mounting the wafer is reduced from bottom to top. Since the position of the wafer falling on the notch 62 may be not fixed and may be shifted when the wafer is on the
The bottom surface of the notch 62 located on the upper side has a narrowest width of not more than 3mm, and the bottom surface located on the lower side has a widest width of not less than 5 mm.
The drawings in the present specification are schematic views to assist in explaining the concept of the present invention, and schematically show the shapes of respective portions and their mutual relationships. It should be understood that the drawings are not necessarily to scale, the same reference numerals being used to identify the same elements in the drawings in order to clearly show the structure of the elements of the embodiments of the invention.
In the description herein, references to the description of the term "one embodiment," "some embodiments," "an illustrative embodiment," "an example," "a specific example," or "some examples" or the like mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
While embodiments of the invention have been shown and described, it will be understood by those of ordinary skill in the art that: various changes, modifications, substitutions and alterations can be made to the embodiments without departing from the principles and spirit of the invention, the scope of which is defined by the claims and their equivalents.
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